Johannah Mae D. Abestano 1.

For the NTPU CMOS Technology

IV- BSECE

ECE 196

(a) Calculate the nominal unimplanted NMOS and PMOS threashold voltage with zero substrate bias (VSB = 0). | For LEVEL 1 NMOS | | |

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For LEVEL 1 PMOS

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For LEVEL 3 Enhancement NMOS

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For LEVEL 3 Depletion NMOS

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For LEVEL 3 Enhancement PMOS

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(b) If a single shallow implant is used to adjust both the NMOS and PMOS thresholds, what type (Arsenic of Broon) and how much (per cm2) impurity must be implanted to obtain nominal thresholds of equal magnitude (|VTNO|=|VTPO|)?

In order to make VTP = VTN, we must change NSUB for PMOS to adopt new VTH. Let

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1. In the NTPU Technology, if the field threshold for the substrate is controlled with a shallow implant, what type and how much impurity (per cm2) must be implanted to ensure a field threshold VTFN15V? 2. Create on paper, the SPICE LEVEL 1 MODEL files for the nominal NMOS and POMS transistors in the NTPU CMOS technology, including the electrical model parameters. Assume that the device thresholds are adjusted Level 1 NMOS

COX

PMOS

COX Level 3
NMOS

COX
NMOS (depletion)

COX PMOS COX

3. Data measured for an MOS transistor are given in the table below. Determine whether it is an NMOS or PMOS transistor and whether it is an enhancement or depletion device. Calculate VTO, k=uCOX(W/L), and . You may assume that | |=0.6v. VGS 1.5 3 3 3 VDS 2 2 3 3 VBS(V) 0 0 0 -3 ID (A) 49 346 406 147

The data shown from the table indicates that the device is an NMOS because its turn on bias voltage is positive. And because the VGS increases when the ID is increased the MOSFET is an Enhancement type. [ ( ) Where ]

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