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SATHYABAMA UNIVERSITY
(Established under section 3 of UGC Act,1956)

Course & Branch :M.E - PEL/W-PEL Max. Marks :80 Title of the Paper :Advanced Power Semiconductor Devices Sub. Code :SEEX5004 Time : 3 Hours Date :30/05/2011 Session :AN
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1.

PART - A Answer ALL the Questions Write short notes on the following: (a) On-state switching losses (b) EMI due to switching

(6 x 5 = 30)

2. 3. 4. 5. 6.

Explain the static characteristics of PNP transistor with a neat schematic. Draw and explain the dynamic model of IGBT. How are the SCRs protected against over current and over voltage? Explain. Explain the function and operation of an opto-coupler. Discuss the various modes of heat transfer. Also list the types of cooling methods. PART B (5 x 10 = 50) Answer ALL the Questions Discuss in detail the forward and reverse characteristics of power diodes. List their applications. (or) Explain the following with respect to power diodes:

7. 8.

(a) Switching characteristics (b) Switching losses and rating 9. Explain the construction of BJT. Also mention the significance of negative temperature co-efficient. (or) 10. Explain the two-transistor analogy. What is Darlington pair? Compare BJT and thyristor. 11. Explain the principle of operation of voltage controlled devices. Discuss the switching characteristics of any one of the voltage controlled devices. (or) 12. Comment on: (a) GTO (b) RCT (c) IGCT 13. Discuss the methods of firing of SCR in detail. (or) 14. What is the use of pulse transformer? Explain. Also discuss the gate protection scheme applicable for SCR. 15. Discuss the heat sink types and design elaborately. (or) 16. Explain the following: (a) Phase cooling (b) Thermal equivalent circuit