Tda7560a Pal007a

www.agelectronica.com www.agelectronica.
com
 TDA7560
4 x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD

PRODUCT PREVIEW
SUPERIOR OUTPUT POWER CAPABILITY: MULTIPOWER BCD TECHNOLOGY

4 x 50W/4Ω MAX.
4 x 45W/4Ω EIAJ
4 x 30W/4Ω @ 14.4V, 1KHz, 10% MOSFET OUTPUT POWER STAGE
4 x 80W/2Ω MAX.
4 x 77W/2Ω EIAJ
4 x 55W/2Ω @ 14.4V, 1KHz, 10%
EXCELLENT 2Ω DRIVING CAPABILITY FLEXIWATT25
HI-FI CLASS DISTORTION
LOW OUTPUT NOISE
ST-BY FUNCTION
ORDERING NUMBER: TDA7560
MUTE FUNCTION
AUTOMUTE AT MIN. SUPPLY VOLTAGE DE- FORTUITOUS OPEN GND
TECTION REVERSED BATTERY
LOW EXTERNAL COMPONENT COUNT:
ESD
– INTERNALLY FIXED GAIN (26dB)
– NO EXTERNAL COMPENSATION
– NO BOOTSTRAP CAPACITORS DESCRIPTION
ON BOARD 0.35A HIGH SIDE DRIVER The TDA7560 is a breakthrough BCD (Bipolar /
CMOS / DMOS) technology class AB Audio
Power Amplifier in Flexiwatt 25 package designed
PROTECTIONS: for high power car radio
OUTPUT SHORT CIRCUIT TO GND, TO VS,
ACROSS THE LOAD The fully complementary P-Channel/N-Channel
VERY INDUCTIVE LOADS output structure allows a rail to rail output voltage
swing which, combined with high output current
OVERRATING CHIP TEMPERATURE WITH and minimised saturation losses sets new power
SOFT THERMAL LIMITER references in the car-radio field, with unparal-
LOAD DUMP VOLTAGE leled distortion performances.
BLOCK AND APPLICATION DIAGRAM
Vcc1 Vcc2
470µF 100nF
ST-BY
MUTE HSD HSD

OUT1+
IN1 OUT1-
0.1µF PW-GND
OUT2+
IN2 OUT2-
0.1µF PW-GND
OUT3+
IN3 OUT3-
0.1µF PW-GND
OUT4+
IN4 OUT4-
0.1µF PW-GND
AC-GND SVR TAB S-GND

0.47µF 47µF
D94AU158B
November 1999 1/10
This is preliminary information on a new product now in development. Details are subject to change without notice.
www.agelectronica.com www.agelectronica.com
TDA7560
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VCC Operating Supply Voltage 18 V
VCC (DC) DC Supply Voltage 28 V
VCC (pk) Peak Supply Voltage (t = 50ms) 50 V
IO Output Peak Current:
Repetitive (Duty Cycle 10% at f = 10Hz) 9 A
Non Repetitive (t = 100µs) 10 A
Ptot Power dissipation, (Tcase = 70°C) 80 W
Tj Junction Temperature 150 °C
Tstg Storage Temperature – 55 to 150 °C
PIN CONNECTION (Top view)
1 25
V CC
V CC
AC-GND
P-GND2
P-GND1
P-GND3
P-GND4
SVR
HSD
TAB
IN1
IN2
S-GND
IN4
IN3
OUT2-
ST-BY
OUT1-
OUT3-
OUT4-
MUTE
OUT2+
OUT1+
OUT3+
OUT4+
D94AU159A
THERMAL DATA
Symbol Parameter Value Unit
Rth j-case Thermal Resistance Junction to Case Max. 1 °C/W
2/10
TDA7560
ELECTRICAL CHARACTERISTICS (VS = 13.2V; f = 1KHz; Rg = 600Ω; RL = 4Ω; Tamb = 25°C;

Refer to the test and application diagram, unless otherwise specified.)
Symbol Parameter Test Condition Min. Typ. Max. Unit
Iq1 Quiescent Current RL = ∞ 120 200 320 mA
VOS Output Offset Voltage Play Mode ±80 mV
dVOS During mute ON/OFF output ±80 mV
offset voltage
Gv Voltage Gain 25 26 27 dB
dGv Channel Gain Unbalance ±1 dB
Po Output Power VS = 13.2V; THD = 10% 23 25 W
VS = 13.2V; THD = 1% 16 19 W
VS = 14.4V; THD = 10% 28 30 W
VS = 14.4V; THD = 1% 20 23 W
VS = 13.2V; THD = 10%, 2Ω 42 45 W
VS = 13.2V; THD = 1%, 2Ω 32 34 W
VS = 14.4V; THD = 10%, 2Ω 50 55 W
VS = 14.4V; THD = 1%, 2Ω 40 43 W
Po EIAJ EIAJ Output Power (*) VS = 13.7V; R L = 4Ω 41 45 W
VS = 13.7V; R L = 2Ω 75 77 W
Po max. Max. Output Power (*) VS = 14.4V; R L = 4Ω 50 W
VS = 14.4V; R L = 2Ω 80 W
THD Distortion Po = 4W 0.006 0.05 %
Po = 10W; RL = 2Ω 0.015 0.07 %
eNo Output Noise ”A” Weighted 35 50 µV
Bw = 20Hz to 20KHz 50 70 µV
SVR Supply Voltage Rejection f = 100Hz; Vr = 1Vrms 50 70 dB
fch High Cut-Off Frequency PO = 0.5W 100 300 KHz
Ri Input Impedance 80 100 120 KΩ
CT Cross Talk f = 1KHz PO = 4W 60 70 – dB
f = 10KHz PO = 4W 60 – dB
ISB St-By Current Consumption VSt-By = 1.5V 75 µA
Ipin4 St-by pin Current VSt-By = 1.5V to 3.5V ±10 µA
VSB out St-By Out Threshold Voltage (Amp: ON) 3.5 V
VSB in St-By in Threshold Voltage (Amp: OFF) 1.5 V
AM Mute Attenuation POref = 4W 80 90 dB
VM out Mute Out Threshold Voltage (Amp: Play) 3.5 V
VM in Mute In Threshold Voltage (Amp: Mute) 1.5 V
VAM in VS Automute Threshold (Amp: Mute)
Att ≥ 80dB; POref = 4W 6.5 7 V
(Amp: Play)
Att < 0.1dB; PO = 0.5W 7.5 8 V
Ipin22 Muting Pin Current VMUTE = 1.5V 7 12 18 µA
(Sourced Current)
VMUTE = 3.5V -5 18 µA
HSD SECTION
Vdropout Dropout Voltage IO = 0.35A; VS = 9 to 16V 0.25 0.6 V
Iprot Current Limits 400 800 mA
(*) Saturated square wave output.
3/10
TDA7560
Figure 1: Standard Test and Application Circuit
C8 C7
0.1µF 2200µF
Vcc1-2 Vcc3-4
6 20
R1
ST-BY 4 9
10K C9 8 OUT1
1µF
R2 7
MUTE 22
47K C10
1µF 5
C1
2 OUT2
IN1 11
3
0.1µF
IN2 12 17
C2 0.1µF 18 OUT3
19
IN3 15
C3 0.1µF
21
IN4 14 24 OUT4
C4 0.1µF S-GND 23
13
16 10 25 1
SVR HSD TAB
C5 C6
0.47µF D95AU335B
47µF
4/10
TDA7560
Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale)
COMPONENTS &
TOP COPPER LAYER
BOTTOM COPPER LAYER
5/10
TDA7560
Figure 3. Quiescent current vs. supply Figure 4. Output power vs. supply voltage.
voltage.
Id (mA) Po (W)
240 80
75 Po-max
Vi = 0
70
220 65
RL = 4 Ohm 60 RL=4 Ohm
55 f= 1 KHz
200 50 THD=10 %
45
40
180 35
30
25 THD=1 %
160 20
15
10
140 5
8 10 12 14 16 18 8 9 10 11 12 13 14 15 16 17 18
Vs (V) Vs (V)
Figure 5. Output power vs. supply voltage. Figure 6. Distortion vs. output Power
Po(W) THD(%)
130 10
120 Po-max
110
Vs=14.4 V
100 1 RL= 4 Ohm
90 RL=2 Ohm
f=1 KHz THD=10%
80 f = 10 KHz
70 0.1
60
50
40 THD=1 % f = 1 KHz
0.01
30
20
10 0.001
8 9 10 11 12 13 14 15 16 17 18 0.1 1 10
Vs (V) Po (W)
Figure 7. Distortion vs. output power Figure 8. Distortion vs. frequency.
THD(%) THD (%)

10 10
Vs=14.4 V
1 RL= 2 Ohm 1 Vs = 14.4 V
RL =4 Ohm
f = 10 KHz Po =4 W
0.1 0.1
0.01 f = 1 KHz 0.01
0.001 0.001
0.1 1 10 10 100 1000 10000
Po (W) f (Hz)
6/10
TDA7560
Figure 9. Distortion vs. frequency. Figure 10. Crosstalk vs. frequency.
THD(%) CROSSTALK(dB)
10 90
80
1 Vs =14.4 V
RL= 2 Ohm 70
Po= 8 W
60
0.1
50 RL= 4 Ohm
Po= 4 W
40 Rg= 600 Ohm
0.01
30
0.001 20
10 100 1000 10000 10 100 1000 10000
f (Hz) f (Hz)
Figure 11. Supply voltage rejection vs. fre- Figure 12. Output attenuation vs. supply
quency. voltage.
SVR(dB) OUT ATTN (dB)
100
90 0
RL= 4 Ohm
80 Po= 4 W ref.
-20
70
60 -40
50
Rg= 600 Ohm -60
40 Vripple= 1 Vrms
-80
30
20 -100
10 100 1000 10000 5 6 7 8 9 10
f (Hz) Vs (V)
Figure 13. Output noise vs. source resistance. Figure 14. Power dissipation & efficiency vs.
output power (sine-wave operation)
En (uV) Ptot (W) n (%)
130 90 90
120 80 80
n
110 Vs= 14.4V Vs=13.2V
RL= 4 Ohm 70 70
100 RL=4 x 4 Ohm
90 60 f= 1 KHz SINE
60
80 50 50
70 40 40
22-22KHz lin.
60 30 30
Ptot
50
”A” wgtd 20 20
40
30 10 10
20 0 0
1 10 100 1000 10000 100000 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Rg (Ohm) Po (W)
7/10
TDA7560
Figure 15. Power dissipation vs. ouput power Figure 16. Power dissipation vs. output power
(Music/Speech Simulation) (Music/Speech Simulation)
Ptot (W) Ptot (W)
30 60
Vs= 13.2V
55 RL= 4 x 2 Ohm
Vs= 13.2V GAUSSIAN NOISE
25 50
RL=4 x 4 Ohm
GAUSSIAN NOISE 45
CLIP START
40 CLIP START
20
35
30
15 25
20
10 15
10
5 5
0 1 2 3 4 5 6 0 2 4 6 8 10
Po (W) Po (W)
APPLICATION HINTS (ref. to the circuit of fig. 1) be employed to drive muting and stand-by pins in
absence of true CMOS ports or microprocessors.
SVR
R-C cells have always to be used in order to
Besides its contribution to the ripple rejection, the smooth down the transitions for preventing any
SVR capacitor governs the turn ON/OFF time se- audible transient noises.
quence and, consequently, plays an essential role
in the pop optimization during ON/OFF tran- About the stand-by, the time constant to be as-
sients.To conveniently serve both needs, ITS signed in order to obtain a virtually pop-free tran-
MINIMUM RECOMMENDED VALUE IS 10µF. sition has to be slower than 2.5V/ms.
INPUT STAGE HEATSINK DEFINITION

The TDA7560’s inputs are ground-compatible and Under normal usage (4 Ohm speakers) the
can stand very high input signals (± 8Vpk) without heatsink’s thermal requirements have to be de-
any performances degradation. duced from fig. 15, which reports the simulated
power dissipation when real music/speech pro-
If the standard value for the input capacitors grammes are played out. Noise with gaussian-
(0.1µF) is adopted, the low frequency cut-off will distributed amplitude was employed for this simu-
amount to 16 Hz. lation. Based on that, frequent clipping occurence
(worst-case) will cause Pdiss = 26W. Assuming
STAND-BY AND MUTING Tamb = 70°C and TCHIP = 150°C as boundary
conditions, the heatsink’s thermal resistance
STAND-BY and MUTING facilities are both should be approximately 2°C/W. This would avoid
CMOS-COMPATIBLE. If unused, a straight con- any thermal shutdown occurence even after long-
nection to Vs of their respective pins would be ad- term and full-volume operation.
missible. Conventional low-power transistors can
8/10
TDA7560
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.45 4.50 4.65 0.175 0.177 0.183 OUTLINE AND
B 1.80 1.90 2.00 0.070 0.074 0.079 MECHANICAL DATA
C 1.40 0.055
D 0.75 0.90 1.05 0.029 0.035 0.041
E 0.37 0.39 0.42 0.014 0.015 0.016
F (1) 0.57 0.022
G 0.80 1.00 1.20 0.031 0.040 0.047
G1 23.75 24.00 24.25 0.935 0.945 0.955
H (2) 28.90 29.23 29.30 1.138 1.150 1.153
H1 17.00 0.669
H2 12.80 0.503
H3 0.80 0.031
L (2) 22.07 22.47 22.87 0.869 0.884 0.904
L1 18.57 18.97 19.37 0.731 0.747 0.762
L2 (2) 15.50 15.70 15.90 0.610 0.618 0.626
L3 7.70 7.85 7.95 0.303 0.309 0.313
L4 5 0.197
L5 3.5 0.138
M 3.70 4.00 4.30 0.145 0.157 0.169
M1 3.60 4.00 4.40 0.142 0.157 0.173
N 2.20 0.086
O 2 0.079
R 1.70 0.067
R1 0.5 0.02
R2 0.3 0.12
R3 1.25 0.049
R4 0.50 0.019
V 5° (Typ.)
V1 3° (Typ.) Flexiwatt25
V2 20° (Typ.)
V3 45° (Typ.)
(1): dam-bar protusion not included
(2): molding protusion included
H
H1
V3
H2 A
H3
O
R3
R4
L4
V1
R2
N
L2
R
L L1
V1
L3
V2
R2 R1 D
L5 R1 R1
E
G G1 F
V M M1
C
V
FLEX25ME
9/10
TDA7560
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
10/10

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www.agelectronica.com www.agelectronica.

4 x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD

SUPERIOR OUTPUT POWER CAPABILITY: MULTIPOWER BCD TECHNOLOGY

MUTE HSD HSD

AC-GND SVR TAB S-GND

November 1999 1/10

ABSOLUTE MAXIMUM RATINGS

PIN CONNECTION (Top view)

ELECTRICAL CHARACTERISTICS (VS = 13.2V; f = 1KHz; Rg = 600Ω; RL = 4Ω; Tamb = 25°C;

Figure 1: Standard Test and Application Circuit

Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale)

BOTTOM COPPER LAYER

Figure 7. Distortion vs. output power Figure 8. Distortion vs. frequency.

THD(%) THD (%)

0.01 f = 1 KHz 0.01

Figure 9. Distortion vs. frequency. Figure 10. Crosstalk vs. frequency.

INPUT STAGE HEATSINK DEFINITION

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