(please write your Exllm Roll No.

immediately)

Exam Rolf No ..

END-TERM EXAMINATION

DECEMBER·2006

Exam Series Code: J00363DEC06200395

Paper Code:ETIC-103IETCS-20J

Subject: Analog Electronics

Time: 3 Hours

Maximum Ma.rks :75

I Note: Attempt all questions includingQ.l which is COmpUls01y.

Q.l Short type questions: -

(a) Define intrinsic and extrinsic semiconductors. Determine conductivity and resistivity of Ge sample having intrinsic concentration of 2.5 xlOl9/m3 given J-le = 0.35,

~h == 0.15 m2/vs. e == 1.6 x 1O.19C. (3)

(b) Explain avalanche and zener breakdown mechanism in a p-n junction. Draw circuit

diagram to show the use of a zener diode as a reference diode. (3)

(c) Draw full wave bridge rectifier circuit. Sketch input and output waveforms. If the

0. input is 1m sinwt, show that Ide == 2:m , IRMs = ~ and the ripple factor is 0.482. (3)

(d) Name the following diodes: - (3)

(i) Operates in reverse bias mode and is used in voltage controlled tuning/oscillator

r .- circuit.

(ii) Operates as a source of electric power when exposed to light radiation. It is useful P/ for power generation in satellites,

$<e) Explain Ebers-Moll model of transistor. (4)

'(f) Determine IE, ct and f3 of a common base transistor circuit given Ie = 7mA, IB ==

O.lmA. (3)

(g) Compare CB, CE and CC configurations oftransistor. (3)

(h) An op. amp. has a CMRR== 90dB. If its differential voltage gain is 30,000,. find its

9'""'common mode gain. (3)

Q.2 (a) Explain the structure and mechanism of operation of light emitting diode. (6) (b) LEDs are made of ternary semiconductor GaP,tAsl." with X == 0.4 and 0.6. The band-

gap energy is E = 1.42 + 1.1 X + 0.17 X2 ev. Determine the band-gap energy of the

two LEDs inev and the wavelength of radiation A in 11m. [Given h = 6.6 x 10·34jsJ

(6 .• 5)

OR

Q.2 (a) Explain the formation of potential barrier across a p-n junction, (6) (b) Explain the "tunnelling" process and the structure and performance characteristics of

a tunnel diode. Draw energy band-gap diagrams to illustrate your answer. (6.5)

Q.3 (a) Why is transistor biasing required? Describe different schemes of transistor biasing

in CE n-p-n transistor circuit. State their advantages. (6)

"""" (b) A silicon n-p-n transistor (Cf mode) is biased using base resistance method. The

parameters of the circuit are: Vee = 12V;. Rc = 330n; IB "" O.3mA; f3 = 100. Find RB,

load line, Q point and stability factor S. (6.5)

l00363DEC06200395

12 V. r.>

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:2- ::?Rc = 330 S'l-

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~--------------~-------o

BA.SE RES.ISTOR BIAS

[-2-}

OR

Q.3 (a) Describe the structure and working of an n-channel junction field effect transistor.

Derive expressions fer the pinch-off voltage, gm and gain ofFET. (9)

(b) A junction FET has following parameters: (3.5)

Nd = 2 x 1021/m3, channel width 2a = 4 x 10-6m, E =12. Determine pinch off voltage. [Given: e = 1.6 x 1O-19c, Eo = 8.85 X 10-12 F/m.]

Q_4 (a) Using 'h' parameter model of an n-p-n transistor derive the expression for (8)

(i) input impedance

(ii) current gain

(iii)voitage gain and

(iv)output impendence.

~a: of a transistor changes from 0.96 to 0.99 find the corresponding values ofJ3. (4.5)

OR

QA (a) What are the various types of amplifier coupling? Describe R-C coupling in a R-C

coupled amplifier. (6) -

(b) A single stage amplifier has collector load Rc = IO KO, input resistance Rin= I KO and 13 = 100. If a speaker load of RL = 1000. is connected at the output, find the voltage gain. Comment on the result and discuss hew change in coupling can increase

voltage gain. (6.5)

g..s~(a) I)rew the circuit diagram of a linear LC. ope~at~onaJ amplifier. Describe the various

~tages and state the Ideal and normal characteristics of an op-arnp. (6.5)

t..- ~ __

(b) Explain the application of an op-amp as: - (6)

(u_,_DUferentiator and integrator ..

(ii) Phase shift oscillator or Schmitt trigger.

OR

Q.5 Write technical notes on: - (a¥CMRR

(~J!)plications of an op-amp

(c) Frequency response of an R-C coupled amplifier

(4) (4) (4.5)

************

100363DEC06200395

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