C02-Semiconductor and Diode

Semiconductors and Diodes
Instructor: ChaoChao-Ching Ho
National Yunlin University of Science and Technology
Robotic Embedded System Lab 2012
Reference
Rizzoni
: 5thh Edition, Chap 9

(),
(
) Chap 2
KVL
KCL
P =VI
VI =II2R
REQ R1 R2 RN
Rk
Vk
Vs
R1 R2 Rk RN
REQ
1
1 / R1 1 / R2 1 / RN
1 / Rk
Ik
Is
1 / R1 1 / R2 1 / Rk 1 / RN
()()
((Norton Equivalent
q
Circuit))
N
RN
N
RN
(doping)
N(-)
N(
)
P(+)
Bohr model of an atom
As seen in this model,

electrons circle the
nucleus. Atomic
structure of a material
determines its ability
to conduct or insulate.

Covalent Bonding ( )
Covalent bonding is a bonding of two or more atoms by
the interaction of their valence electrons.
The process of creating N- and P-type materials

is called doping.
Other atoms with 5
electrons such as Antimony
() are added to Silicon to
increase the free electrons.
Other atoms with 3 electrons

such as Boron () are added
to Silicon to create a
deficiency of electrons or
hole charges.
N-type
yp
P-type
yp
Electric field in a ppn jjunction
Wiley/Razavi/Fundamentals of Microelectronics
P
N()P
()()(Fig 9.5)
P-N
P
N
(drift) Is
;
(diffusion) Id
()
Fig 99.5
Fig.
5
p-n Junction & Diode

p
Offset voltage:
g V
The Depletion Region ()
250C 0.6V
(barrier potential)
Depletion
p
zone to insulating
g state
At the junction, free electrons
f
from
the
th N-type
Nt
material
t i l fill
holes from the P-type material.
This creates an insulating
layer in the middle of the
diode called the depletion
p
zone.
How To g
get rid of the depletion
p
zone?
When the negative end of the

circuit is hooked up to the Ntype layer and the positive
end is hooked up to P-type
layer, electrons and holes
start moving and the
depletion zone disappears.
disappears
When the positive end of the

circuit is hooked up to the Ntype layer and the negative
end is hooked up to the Ptype layer, free electrons
collect on one end of the
diode and holes collect on the
other. The depletion zone gets
bigger.
PN
+N - P

+P- N
(rectifier diode)

Fig.
g 9.9
Forward & Reverse biased diode

equation Fig. 9.7, Eqn 9.6
id I d I 0 I 0 (e qv / kT 1)
D
Dominant current: drift
Dominant current: diffusion
PN jjunction under reverse and forward

bias.
Overall i-v characteristic of a diode

Fig. 9.10
(Zener Diode)
Open
(
(nA)
)
id I d I 0 I 0 (e qvD / kT 1)
Constant-voltage
g diode model.
R
Reverse
b
breakdown
kd
characteristic
h
t i ti

(breakdown)
1A (1A)
1N4001
(V)
50
1N40052
100
1N40054
200
1N4004
400
1N4005
600
1N4006
800
1N4007
1000
3A (3A)
1N5400
(V)
50
1N5401
100
1N5402
200
1N5403
400
1N5404
600
1N5407
800
1N5408
1000
(Ideal
(
Diode Model))
Fig. 9.11
Fig 9.12-14
VD0
iD=?

1.5/1000=1.5mA
VD<0
(
)
1.
2.
3.
(ONOFF)
9.1 (
()
)
VD=?
Fig. 9.15
Fig 9.16
Fig.
9 16
9.1
VD
How=?
VD=?
Fig. 9.17
Q
Question:
if R2 is removed,, will the diode
conduct? If v =0
9.2 (
()
)
If v =0
VD=?
Fig. 9.18
Fig. 9.19
Q
Question:
decide D1 and D2 is conducting
g
or not?
1.
2.
3.
4.
v1=0 V, v2=0 V
v1=5 V,, v2=5 V
v1=0 V, v2=5 V
v1=55 V,
V v2=00 V
Neither
Both
D2 only
D1 only
Figure
g
9.22
(Offset
(
Diode Model))
=0.6VDC(Fig 9.23)
VD0.6
0 6
0
0.6V
6V
VD<0.6

9.4
()
(
)
Find minimum value of v1=?
V =0.6
0.6 V
V D1, D2?
(Small-Signal Diode Model)
Fig 9.30

datasheet
Fig.
g 9.30 Load line analysis
y & equivalent
q
circuit of a diode
vT iD RT vD
1
1
iD vD
vT i.e., y ax b
RT
RT
Ex 9.5, Find (VQ, IQ ) =??
Ex 9.5
Ex: find the Q ?

vD
rD
iD
(Piecewise Linear Diode Model)
(
(Conductance)
)
i D
1
rD v D
0.6V
9.6 (
qVD / kT
)
iD I 0 e
rD=?
iD I 0 e
qvD / kT
IQ I 0e
qvQ / kT
IQ
kT
50 103
vQ
0.025 ln(
) 0.731V
log e
14
q
I0
10
1 iD
rD vD
( IQ ,VQ )
I 0 (e qvD / kT )
vD
(I
Q ,VQ )
1 1014 0.731/0.025
e
2 S rD 0.5
rD 0.025
q qVQ / kT
I0
e
kT
9.6 (
qVD / kT
)
iD I 0 e
rD=?
1 iD
rD vD
( IQ ,VQ )
I 0 (e qvD / kT )
vD
(I
iD I 0 e qvD / kT I Q I 0 e
Q ,VQ )
q qVQ / kT
I0
e
kT
qvQ / kT
IQ
50 103
kT
vQ
llog e
0.025
0 025 ln(
l (
) 0.731
0 731V
14
q
I0
10
1 1014 0.731/0.025
e
2 S rD 0.5
rD 0.025

9.7
()
(
)
Find vL=?
vL vS 0.6V
RL
vS v

RS rD RL
vS 0.6V

9.7
Vs=0.6V
Diode Data Sheets: pp

pp. 506-507
100
0.65A
DC()
()
DC
ACDC
(Fig 9.45)

(A)
(B)
(C)
(D)
(Half-Wave Rectifier)
9.7
AC

DC1/
vDC
vP T /2
1 T /2
2
vP sin(t )dt sin( t )dt
T 0
T 0
T
T /2
vP 1
2
1
cos(( t ) vP
T 2
T 0
T
(Full Wave Rectifier)

(Full-Wave
Fig 9.39
Fig
g 9.39
Center-tap typeRobotic Embedded System Lab 2012 Bridge type
The Full
Full-Wave
Wave Bridge Rectifier
(Full-Wave Rectifier))
(
/2N2NN
(Isolation)
(Isolation)
DC

(Bridge
(
g Rectifier))
vDC
IC (Fig 9.419.42)

AC(Fig 9.43)DC
2/
2/
2v ppeak T /2
2 T /2
2
2
v peak sin(
i (t )dt
sin(
i ( t )dt v peak
0
0
T
T
T
Average
g & RMS values Fig.
g 4.19, pp
pp. 172
1
x(t )
T
'
x(t )dt
'
xrms
x 2 (t ' )dt '
Fig.
g 9.41
Fig.
g 9.42
Vs>0
D1D3
Vs<0
D2D4
Fig.
g 9.43
Twice the Offset voltage
(
)()
9.8 ()
Find
1 Peakk current ipeak= ?
1.
2. Average current iaverage= ?
20V(rms)
50
i peak
v peak
RL
2vrms
RL
T /2
T
v
1
1
peak
i i (t )dt
sin(t )dt 0dt
T 0
T 0 RL
T /2
T /2
v peak cos((t )
v peak (1 1) v peak
2
TR
TR
9.9 ()
Find
1 Loadd resistance
1.
i
RL= ?
2. RMS source voltage Vrms= ?
50V
5A
Solution
RL
vL
iL
T /2
T
1
1
vL v peak sin((t )dt v peak sin((t )dt v peak sin((t )dt
T 0
T0
T /2
2v peak cos(t ) T /2 2v peak (1 1)) v peak 2 2vrms
50V
T
T
0
T
T

9.9E
Prove
2 Nv peak
1 DC
1.
C output VL=
2. Peak voltage Vpeak= ?
Fig 9.39
vL
T
T /2
T
1
1
N v peak sin(t ) dt N v peak sin(t )dt v peak sin(t )dt
T 0
T0
T /2
v peak cos(t ) T / 2 cos(t ) T 2 Nv peak

N
T
0
T /2
Vpeak= 2
Vrms 0.6 2
Two diodes, D1 , D4
v 0.6
0 6V
vZ 5V
VD 0.6V
0.6V
-5V<VD<0.6V
VD -5V
5V
5V
-5V
(Zener
(
Diode)
)
Zener Diode
iL
VZ
RL
iL iS iZ
iS
vS VZ
RS
be constrained
PZ iZVZ
RL ,min RL RL.max
()
( )
DC
(ripple voltage)
RC(Fig
9.44)
)
(fluctuation)

(Zener
Diode)
Diode)
( )
()
( )
()
(current sink)
(
)
()
()
()
()
()
9.10 ()
Find
1. ?
2 ?
2.
50
24V
12V
250
1. iz = is - iL
2 iz = is
2.
9.11 ()
Find RL,min RL,max ?
50 V
IL
R
RL,minIL
RL,maxIL
VZ 14 V , PZ 5 W
Rmin
Rmax
VZ
Is IZ
I Z 0
VZ
I s PZ / VZ
14
11.7
(50 14) / 30
PZ 5[W ]
14
16.6
(50 14) / 30 5 / 14
9.12 (
(
vripple RL)
50
14V+100mV
8V
10
v1
150
vs v1 v1 v1 vZ
RS
RL
rZ
14 v1 v1 v1 8
50
150 10
v1 8.53V
v2
vripple v2
RS
v2 v2
RL rZ
100mV v2 v2 v2
50
150 10
v2 15.8mV
v2
15 8
15.8
100mV 100
IC ((Voltage
g Regulator)
g
)
References: Chap 12.3
(Chap 12.3)
IC
(th
(three-terminal
t
i l voltage
lt
regulator)IC
l t ) IC
78xxxx
2V
IC78057V-35V
5V(0 2V)
5V(0.2V)
7805
1.
2.
3.
9V
10
1.
2.
3.
12V
5/12 42% 24V5/24 21%
5/12=42%24V5/24=21%
1Amp

IC
(The Diode Clipper)
(Fig 9.54)
Vmax v L (t ) Vmax
Zener Limitingg
Zener diodes can used for limiting just as normal
diodes. Recall in previous chapter studies about
limiters. The difference to consider for a zener limiter
i its
is
it zener breakdown
b
kd
characteristics.
h
t i ti
()
()
RL
v L (t )
v S (t )
rS RL
Fig 9.58
=vmax
Fig 9.60
Diode Clampers
p (()
)
A diode clamper adds a DC level to an AC voltage. The
capacitor charges to the peak of the supply minus the diode
d
drop.
O
Once
charged,
h
d the
th capacitor
it acts
t like
lik a battery
b tt
in
i series
i
with the input voltage. The AC voltage will ride along with
the DC voltage. The polarity arrangement of the diode
determines whether the DC voltage is negative or positive.
Source voltage
Output voltage
(The
(
Diode Clamp)
p)
Fig 9.61

RC T
(Fig 9.62)
v out (t ) v S (t ) V peak
Source voltage
g
Clamp voltage
Fig
9.61DC(
)
v (t ) v (t ) (V
V )
out
peak
DC
v out (t ) v S (t ) V peak
Fig
Fi 9.63
9 63
DC
- +
vout (t ) vS (t ) (V peak VDC )
9.13 ()
vS DC3 VvDC=?
Clamp voltage
vout (t ) vS (t ) V peak VDC

vS (t ) (5V 2V )
Source voltage
(The
(
Diode Clamp)
p)
(Light Emitting Diode, or LED)
( g
(light-emitting
g diode,, LED)
)
1
1.
2.
3.
2V0.6V
How Light
g Emitting
g Diodes Work
p
photons
For an electron to jump from a lower orbital to a higher

orbital, something has to boost its energy level.
Conversely an electron releases energy when it drops
Conversely,
from a higher orbital to a lower one. This energy is
released in the form of a photon.
p
LED Advantages
g
last much longer

g
Efficiency
much higher percentage of the electrical power is going directly to
generating light
LEDs5 V
9.14 ()
Find
1. PLED=?
2. RS=?
?
3. Ps=?
40mA
5V
1.7V
PLED VLED I LED 68mW

VS VLED
82.5
RS
I LED
PS VS I LED 200mWRobotic Embedded System Lab 2012
(Photo
(
Diode))
(photodiode)
n p

(solar
(solar cell)
cell)

pn

Optical
p
Diodes
The p
photodiode is used to vary
y current by
y the amount of
light that strikes it. It is placed in the circuit in reverse
bias. As with most diodes when in reverse bias, no current
flows when in reverse bias,
bias but when light strikes the
exposed junction through a tiny window, reverse current
increases proportional to light intensity.
How Solar Cells Work
General schematic
of a residential PV
system with battery
storage
Figure
g
9.70
iD
VD
I<0
v>0
LED Vr=2V
( p
(Opto-Coupler)
p )
+
(opto-isolator)
(galvanized isolation)

(!)
(!)
(Motor Driver)
Opto
Opto-isolators
isolators
2009/02/17 v1.0
2009/02/20
2009/02/20 v1
v1.1
1
2009/03/10 v1.2
2010/02/28 v1.3
2011/03/13 v1.4
2011/03/13

C02-Semiconductor and Diode

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

C02-Semiconductor and Diode

Uploaded by

Copyright:

Available Formats

Semiconductors and Diodes

Robotic Embedded System Lab 2012

: 5thh Edition, Chap 9

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Bohr model of an atom

As seen in this model,

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

The process of creating N- and P-type materials

Other atoms with 3 electrons

Robotic Embedded System Lab 2012

Electric field in a ppn jjunction

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

p-n Junction & Diode

Robotic Embedded System Lab 2012

The Depletion Region ()

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

When the negative end of the

When the positive end of the

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Forward & Reverse biased diode

Dominant current: drift

Dominant current: diffusion

Robotic Embedded System Lab 2012

PN jjunction under reverse and forward

Robotic Embedded System Lab 2012

Overall i-v characteristic of a diode

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

(Small-Signal Diode Model)

Robotic Embedded System Lab 2012

Ex 9.5, Find (VQ, IQ ) =??

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

Ex: find the Q ?

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012

(Piecewise Linear Diode Model)

Robotic Embedded System Lab 2012

Robotic Embedded System Lab 2012