Theory of Scanning Electron Microscope

Lettuce Field(16M DRAM)

Hitachi High- Technologies Corporation High-

Theory of Scanning Electron Microscope

Lump (Illumination Source) Electron Source Condenser Lens Sample Objective Lens Projection Lens Sample Objective Lens Scanning Sample Fluorescent screen Image Image C R T Deflection Coils SE Detector

Condenser Lens

Screen Image

O M

TEM

SEM

Difference among OM, TEM and SEM

The Example of Observation of Alga (Mesostigma) (Mesostigma) by Optical Microscope and SEM

Accelerating Voltage: 5kV

Optical Microscope

SEM

The Difference in the Depth of Focus of Optical Microscope and SEM

Fine Electron Beam with Small Incident Angle

Depth of Focus (Shallow)

Depth of Focus Deep Deep

Specimen

Optical Microscope 1"R 1rad 1rad

SEM 10 -2^ 10 -3rad rad

Theory of Scanning Electron Microscope

High Voltage Camera Filament Wehnelt Anode Condenser Lens Deflection Coils Objective Lens Specimen Chamber CRT Mag. Control Deflection Coils Deflection Amplifier Scanning Electron Beam SE Detector Specimen Amplifier Image Signal

Electron Gun

Vacuum Pump

Configuration of a scanning electron microscope

Theory of Scanning Electron Microscope

Scanning Electron Beam of CRT L

Scanning Electron Probe

Scanning(Y)

Specimen

E M S
Scanning (X) l Pixel Magnification :( M)=L / l

CRT

Magnifying mechanism in the SEM

What is Magnification on Hitachis SEM

Magnification=DD

DS

Scan coil

DD 4x id u nit ao Plr (120 x 90mm) 5 inch Sample DS

Theory of Scanning Electron Microscope

Al Coating Layer Primary Electron Beam Phosphors

Scintillator
Photomultiplier Photo Multiplier Tube

Secondary Electron

Photons Specimen +10kV Light Guide

Signal

CRT

Secondary electron detection system

What is resolution on SEM?

Example : Digital Camera

Magnified
Could not identify the gap between point and point

Magnified

What is resolution on SEM?

On SEM : Identify finest gap between 2 particles

Can not identify

Can identify

What is resolution on SEM?

100nm

S-4800 Specimen : Au particle Vacc : 15 kV Mag . : 22 0kX Resolution : 1.0nm

S-5500

Theory of Scanning Electron Microscope

Primary Electron Beam Characteristic X-Ray Backscattered Electron Cathodeluminescence
~10nm

Secondary Electron

Secondary Electron Detector

(Excitation Volume for Secondary Ele ctron Emission)

Specimen Current Transmitted Electron Transmitted (Scattered) Electron

Electron Beam Induced Current

The primary electron beam-specimen beaminteraction in the SEM

Theory of Scanning Electron Microscope Backscattered Electron Secondary Electron Vaccum Sample(Metal)

Simons,et.al

Theory of Scanning Electron Microscope

Secondary Electrons
Quantity of Electrons

Backscattered Electrons

100
Energy of Electron (eV)

10,000

(Incident beam energy : 10,000eV)

Energy spectrum of the electrons emitted from a specimen

Electron Beam generated from Sample

Primary beam

BSE Detector
BSE information

High resolution Surface feature

SE information Composition information Crystal Orientation

sample depth of BSE ~ more than 10nm gene rating

S E Detector

less than 10nm Sample de pth of SE generating

Sample

Theory of Scanning Electron Microscope

Tungsten Filament FE Tip

750 Electron Source Type of Emission Operating Vacum (Pa) Brightness (A/cm str) Source Size ( m) Energy Spred (eV) Life Time (h)
2 e

Tungsten Filament Thermonic 10-5 5x105 30 2.0 50

Field Emission Cold FE ^ 10-8 108 0.01 0.2 2000

Comparison of electron sources

Theory of Scanning Electron Microscope

Tungsten Filament FE Tip

V=
^ 2eV

V= ^ 0.2eV

Crossover of High Energy Electrons

Crossover of Low Energy Electrons

Crossover of High Energy Electrons

Crossover of Low Energy Electrons

Energy Spread Effect of chromatic aberration

Tungsten (W)

Lanthanum Hexaboride (LaB6)

Schottky FE

ColdColdCathode FE

Op. T emp
Energy spread

2300deg. Operation less than 2.0eV 5x105 A/cm2sr less than 100hr

1800deg. Operation less than 1.5eV 5x106 A/cm2sr 500 1000 hr

1800deg Operation Less than 0.8eV 5x10 8 A/cm2sr 1 year Gun exchange N eed continuously

Ambient Temp Less than 0.2eV 2x109 A/cm 2sr More than 2 years No Gun exchange Need at time of use

Brightness Life time Tip change Tip activation

Comparison Of Electron Sources

Theory of Scanning Electron Microscope

Primary beam

S-4300
SE Detector Lens

Specimen )Conventional type(Out-Lens)

S-4500
SE Detector (Upper) Primary beam SE Detector Primary beam Lens

S-5500

SE Detector (Lower)

Specimen

Lens

Specimen )In-lens type

)S nokel type

Theory of Scanning Electron Microscope

20 10 Resolution (nm)

W filament SEM

1.0 0.5 0.5 1.0 Acc.(kV) 10 30

Out lens FE-SEM Snorkel lens FE-SEM In-Lens FE-SEM

Comparison of resolution

Reliable FE-Gan

1st anode FE tip

- Hitachi is manufacturing both FE Gun and FE Tip. - Baking is almost unne cessary afte r the installation.

2nd anode INNER baking OUTER baking

- Even if re quire d, it is very easy including inne r baking. - Heate d Obj. aperture can eliminate contamination for long life-time . - Hitachis FE tip long life has been well known as 3-7 years.

Adjustment of Accelerating voltage

High Vacc 10KV^ 30KV
1 When thick metal layer is coated on the sample 2 When high resolution observation 3 When internal information of sample is required

Middle range Vacc 3KV^

10KV

1 When high resolution and surface info rmation is required 2 When need good contrast on uncurved surface sample

Low Vacc 0.5KV^

3KV

1 When surface feature observation 2 When need to avoid Charge-up effect and sample-damage

Beam spreading in the sample

Vacc 1kV Vacc 15kV

Magnified

20 nm 20 nm

1 m 1 m

a) Sample Carbon Monte Carlo Simulation

Beam spreading in the sample

Vacc 1kV Vacc 15kV

Magnified

0.2 5 nm 5 nm 0.2

m m Monte Carlo Simulation

b) Sample Gold

Theory of Scanning Electron Microscope

Vacc:1.5kV Vacc:0.7kV

Chage-up Phenomena

Eliminate Chage-up Phenomena Specimen : SiO2 on Photo Resist Line Pattern

Observation at lower accelerating voltages

Theory of Scanning Electron Microscope

Vacc : 15kV Vacc : 1.0kV

High Acclerating Voltage

Low Accelerating Voltage Specimen : Solar Battery

Comparison of high and low acclerating voltage

Electrical field effect to primary electron(E)

Primary elec tron Primary elec tron

Pr im ary e lect ron Pr im ary e lect ron

SE Detector SE Detector

e e

FE FE

+1 0k V +1 0k V

Sample Sample

Sample Sample

History of Upper SE Detector

(+10kV has been applied to detector surface ) Instrument

H V
>75kV 0.5 -30kV 0.5 -30kV 0.5 -30kV 0.5 -30kV

Countermeasure
No problem due to high HV Keep the detector away from axis Insert shielding cylinder

TEM
Inlens S EM Semi-inlens S EM

S-900 S-5000 S-5200 S-4500 S-4700 S-4800

ExB equipped
0.5 -30kV 0.5 -30kV

What is ExB ?
Current Magnetic Field

Patent No. : P3081393

Primary electrons

E B
FB
e

SE Detector FE
+10kV

Force

FB
Flemings left-hand rule

+V

<Primary electron case>

|FE|=|FB|
Current(I) direction is opposite to electrons

OBJ Lens Sample

What is ExB ?
Magnetic Field B Force

Patent No. : P3081393

Primary electrons

E B
FB FB
e

SE Detector FE FE
e
+V
+10kV

Current

Secondary Electrons

FB

Flemings left-hand rule

<Secondary electron case>

OBJ Lens
Current(I) direction is opposite to electrons

Sample

Adjustment of Optics conditions d1 Beam spot size

Gun
2 d 0 b 0 b2 a a

d0
a1 Cond. Lens b1 a2 b2
Obj. Lens

b1 Adjusted by Cond. lens

Obj. lens aperture

b2 Adjusted by WD

d1
Sample

Relation between Cond. Lens and image

Beam spot size can be adjusted by changing electric current of Condenser Lens.

Lens current b1 Resolution Beam current S/N of image

Small excitation Long Low Large Large

Large excitation Short High Small Small

Relation between WD and image

WD (Working Distance) : length between Obj. lens and sample surface WD b2 Resolution Lens excitation Focus depth Long Long Low small Deep Short Short High large Shallow

Relation between WD and image

Focus depth: Shallow Resolution : High Focus depth : Deep Resolution : Low

WD 5mm

WD 20mm

Relation between Obj. lens aperture and image

1) Adjusting beam spreading angle 2) Adjusting beam current eradiating to sample
Gun
Shielded beam by Obj. lens aperture

Obj. Lens

Obj. Lens aperture

W.D Beam angle( )

B2

Sample

Relation between Obj. lens aperture and image

Aperture Hole size Resolution Beam current S/N of image Focus depth

Large Low Large Large

Shallow

Small High Small Small Deep

Theory of Scanning Electron Microscope

Aperture Size : Small Aperture Size : Large

Focus Depth !

Deep

Focus Depth !

Shallow

Specimen : Si on Photo Resist Pattern

Comparison of objective movable aperture hole size

Detecting Affection under SEM imaging

Image detecting affection and countermeasures
Affection Phenomenon *Extraordinary contrast *Drift of sample Countermeasures *Metal coating *Observe at Low Vacc * Observe with BSE *Heating / Cooling *UV eradiation *Plasma cleaning *Metal coating * Observe at ultra Low Vacc. *Cooling Observation

Charge-up effect

Contamination

*Less contrast

Beam damage

*Change of sample shape

Charge-up effect

What is Charge-up effect?

II N electron flow entering sample = IP IO UT electron flow radiating from sample = IS E + IBS E Probe current (IP) If the sample is conductive II N IOU T 0h0j0
Electric charge of sample is balanced

IAB

BSE flow (IBSE)

SE flow (ISE)

Sample

Absorbed electron flow (IAB )

What is Charge-up effect?

II N electron flow entering sample = IP IO UT electron flow radiating from sample = IS E + IBS E Probe current (IP) IAB

If the sample is non-conductive II N IOU T "` 0h0j0

Charge-up effect

BSE flow (IBSE) Electric charge

ee- e- ee- e-

SE Flow (ISE)

Sample

Absorbed electron flow (IAB )

Countermeasures against charge-up

Metal coating Metal coating by vacuum elaboration system or Ion sputtering system Coating Material
Need to select optimum material for SEM observation
1. Can coat at homogeneous distribution and fine particle 2. Good efficiency of SE generating 3. Stable against oxidization

Observation Au0 Au-Pd0 Pt-Pd0 Pt .... Analysis C0 Al....

Coating method
Focus point in coating work Need to avoid affecting sample shape
Artifact Changing sample size Contamination / Damage
Coating layer

Need to minimize

Sample
Homogeneous distribution Not Homogeneous distribution

Coating method
Artifact by coating treatment

200nm

Non coating Vacc 2kV

Pt coating Vacc 3kV

Coating method
Less than 3nm coating layer is ideal to avoid artifact

How about odd-shaped sample?

Coating method
a) Coating from only overhead b) Coating from several direction

Coating layer

Coating direction

Sample

*Coating layer become thick when you want to avoid charge-up *Surface feature is not accurate

* Surface feature is accurate

Imaging technique
What is Just focus? focus

Condensed electron beam to finest beam spot is eradiated at sample surface

Spot shape should be perfect circle circle

Theory of Scanning Electron Microscope

Before correction
Y Beam Diameter X Electron Source Objective Lens

Electron Beam

After correction

Y X

Stigmator Beam Diameter

Electron Source Objective Lens

Electron Beam Stigmator

Astigmatism correction method

Theory of Scanning Electron Microscope

Under focus Just focus Over focus

Before correction
Just focus

After correction

Specimen:Trachea of rat

Astigmatism correction method

Ideal adjustment of focus and stigma

stigma focus coarse fine

Beam spot shape Beam spot shape

Ideal beam spot shape

Present beam spot shape

Ideal adjustment of focus and stigma

stigma focus coarse fine

Beam spot shape Beam spot shape

Ideal adjustment of focus and stigma

stigma focus coarse fine

Beam spot shape Beam spot shape

Ideal adjustment of focus and stigma

Adjust knob to center where image is not drifting

stigma

focus coarse fine

Beam spot shape Beam spot shape

Ideal adjustment of focus and stigma

stigma focus coarse fine

Beam spot shape Beam spot shape

Ideal adjustment of focus and stigma

stigma focus coarse fine

Beam spot shape Beam spot shape

Summary: Imaging technique for high resolution

Gun

d0
a1 1st Cond. lens b1 a2 2nd Cond. lens b2 a3 b3

3 d1 d 0 b 0 b22 0 b3 a a a

How to minimize d1?

Shorten b1
Increasing excitation of Cond. lens

d1
Sample

Obj. Lens (Focus knob)

Shorten b3 Shorten WD

Summary: Imaging technique for high resolution

Cond. Lens notch 7$ 12mm

Cond. Lens 8 notch 7 $ 2.5mm

Sample ITO layer Vacc 3.0K6 Mag. x 100,000