Reg. No.

2254
2007. DEGREE EXAMINATION. NOVEMBER/DECEMBER B.E.lB.Tech.
Fifth Semester Electronics and Instrumentation Engineering EI 332 - LINEAR AND DIGITAL INTEGRATED CIRCUITS (Commonto Instrumentation and Control Engineering)

Answer ALL questions. PART A - (10 x 2 -- 20 marks)

1. 2. 3.

Define the term Photo lithography in IC fabrication. What is meant by beam oxidation?

Determine the output voltage Vo for the following circuit shown in figure :

4. 5.

Draw the circuit diagram of a sine wave generator using opamp' State the difference between synchronous and asynchronous sequential circuits. Draw the circuit diagram of a full adder circuit with truth table. What is causeof noise in digital ICs?

6. 7.

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Time : Three hours

Maximum: 100 marks

8.

State any two advantages and limitations of CMOS circuits. Find the resolution of a L2 bit D/A converter. State the important features of voltage to frequency converter TC 9400.

9. 10.

PARTB-(5x16=80marks) 11. (a) (i) With cross sectional view explain various steps involved in the fabrication of PN junction diode. (ii) Explain briefly the steps in etching processfor IC technolory

(10) ( 6)

(b)

(i)

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used in Write short notes on various types of isolation teehniques ( 10) IC fabrication.

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Or

12. (a)

(i)

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Design a monostate multivibrator using 555 timer to produce a pulse width of 100 msec.

va

(ii)

How capacitors are fabricated in integrated circuits?

(6)

(10)

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(ii)

What is a precision diode? With circuit diagram explain full wave (6) precision rectifier. Or

(b)

(i)

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Design a second order Butterworth active high pass filter for the (10) cut offfrequency of 2kHz. Write short notes on protectivecircuits in voltage regulators. (6)

(ii) 13. (a)

Design a synchronous counter with the following sequence:

1,3,5,7r4,r. Or (b) Briefly explain different typesof shift registerswith diagram. 2

(16)

(16) Q 2254

L4.

(a)

(i)

State the reliability requirements and future trends in VLSI (8) technology. Realize the following Booleanfunctions using CMOS logic : (1) (2) Y is an XOR gate. y =(A+B)C Or (8)

(ii)

(b)

(i) (ii)

What are the steps involved in VLSI design flow?

(6)

With diagram explain the DC characteristics of an CMOS inverter. (10) With circuit schematic explain the working principle of AD 590 (10) temperature transducer.

15. (a)

(i)

(ii)

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Explain how IC XR 2206 used as FSK generator.

(6)

(ii)

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Briefly explain the salient features of successive approximation (8) ADCMC 0809 and explain the principle of operation.

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(b)

(i)

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Or

Write short notes on Integrating ADC ICL 7107.

(8)

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