SIPMOS Small-Signal Transistor

BSS 149

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VDS 200 V ID 0.35 A RDS(on) 3.5

N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 2 1 2 3 1 3

Type

Ordering Code

Tape and Reel Information bulk E6325: 2000 pcs/carton; Ammopack

Pin Configuration Marking Package 1 G 2 D 3 S SS149 TO-92

BSS 149 Q62702-S623 BSS 149 Q67000-S252

Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current, TA = 34 C Pulsed drain current, Max. power dissipation, Symbol Values 200 200 20 Class 1 0.35 1.05 1.0 55 + 150 125 E 55/150/56 W C K/W A Unit V

VDS VDGR VGS

ID ID puls Ptot Tj, Tstg RthJA

TA = 25 C TA = 25 C

Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Data Sheet

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BSS 149

Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit

VGS = 3 V, ID = 0.25 mA
Gate threshold voltage

V(BR)DSS
200 1.2 0.7

VGS(th) IDSS

VDS = 3 V, ID = 1 mA
Drain-source cutoff current

1.8

VDS = 200 V, VGS = 3 V Tj = 25 C Tj = 125 C

Gate-source leakage current

A 10 2.5 0.2 200 nA 100 3.5

IGSS RDS(on)

VGS = 20 V, VDS = 0
Drain-source on-resistance

VGS = 0 V, ID = 0.05 A
Dynamic Characteristics Forward transconductance

VDS 2 ID RDS(on)max, ID = 0.35 A

Input capacitance

gfs
0.4 0.6 500 40 12 7 20 60 50

S pF 670 60 20 10 30 80 65 ns

Ciss Coss

VGS = 0, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

Crss

VGS = 0, VDS = 25 V, f = 1 MHz

Turn-on time ton, (ton = td(on) + tr) VDD = 30 V, VGS = 2 V ... + 5 V, RGS = 50 , ID = 0.29 A Turn-off time toff, (toff = td(off) + tf) VDD = 30 V, VGS = 2 V ... + 5 V, RGS = 50 , ID = 0.29 A

td(on) tr td(off) tf

Data Sheet

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BSS 149

Electrical Characteristics (contd) at Tj = 25 C, unless otherwise specified. Parameter Reverse Diode Continuous reverse drain current TA = 25 C Pulsed reverse drain current Symbol min. Values typ. max. A 0.8 Unit V V V V V V V V 0.35 1.05 V Symbol Limit Values min. Range of VGS(th) max. 0.15 0.80 0.93 1.06 1.19 1.32 1.45 1.58 0.95 1.08 1.21 1.34 1.47 1.60 1.73 1.2 Test Condition Unit

IS ISM

TA = 25 C
Diode forward on-voltage

VSD

IF = 0.7 A, VGS = 0 VGS(th) Grouping

VGS(th)

Threshold voltage selected in groups 1): VGS(th) P R S T U V W

1) A specific group cannot be ordered seperately. Each reel only contains transistors from one group.

VDS1 = 0.2 V VDS2 = 3 V; ID = 1 mA

Data Sheet

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BSS 149

Characteristics at Tj = 25 C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 C

Typ. output characteristics ID = f (VDS) parameter: tp = 80 s

Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS

Data Sheet

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BSS 149

Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s, VDS 2 ID RDS(on)max.

Typ. forward transconductance gfs = f (ID) parameter: VDS 2 ID RDS(on)max., tp = 80 s

Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.05 A, VGS = 0 V, (spread)

Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz

Data Sheet

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BSS 149

Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = 3 V, ID = 1 mA, (spread)

Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 s, Tj, (spread)

Drain current ID = f (TA) parameter: VGS 3 V

Drain-source breakdown voltage

V(BR) DSS = b V(BR)DSS (25 C)

Data Sheet

05.99