Professional Documents
Culture Documents
2007 04 04
1.
10000F
1000F
10KHz
1
2.
0.1F 1F
3.
100pF 0.1F
LC 1F 10F
CBB LC
(Electric capacity)
F FpF
nF F
FnFpF F
1F1000000F
1F=1000nF=1000000pF
V
63V100V160V250V400V600V1000V
4V6.3V10V16V25V35V50V63V80V100V220V400V
CBB
CBB 2
2
CBB 2 ?br /> 2
CBB
CBB
10n
10nF 100p 100pF 4n7 4.7nF 1
4 pF
471 4710^1 pF=470pF
pF
F
pongo
pF
=0=1=2=3=4=5=6=7=8=9
pF
3 P 5 P 8 P 10 P 12 P 15 P 20 P 39 P 43 P 47 P
51 P 56 P 62 P 68 P 75 P 82 P 91 P 100P 120P 150P
180P 200P 220P 240P 270P 300P 330P 360P 390P 470P
AX A 10 x pF,104 0.1uF.
DSP
CL
40p--4u
63--630V
CB
10p--1u
100V--30KV
CBB
1000p--10u
63--2000V
CY
10p--0 1u
100V--7kV
CC
1--6800p
63--500V
CT
10p--4 7u
50V--100V
CI
10p--0 1u
63--400V
200
0 47--10000u
6 3--450V
CACN
0 1--1000u
6 3--125V
100--1500p
15--550p
1--29p
0 3--22p
,,
555 , 7805 ,,,,
.
0.5PF--1UF
1
0 2U
II
:
1
1
0.1F0.01F
10F
1F
,1000F20pF
40450VDC 220
2/
1
2/
RCLC
3
RC
C
RC
i = (V / R)e - (t / CR)
1
2
3
4
5
6
7
Datasheet Solutions
chip capacitor
NP0 or CH K < 150
K 040206030805
0603 10nF
1
0.1F 22000F
2
0.1pF 10F
XY EMI/EMC
3
2.2F 560FESR
ESL
0.5pF 100F
5
0.022F 70F
/
MLCC
MLCC
LCD
0.5mm
150
X7RX5R
1000pF
ESR
C0G
1000pF tg(DF)
NME C0G
DF (2.0 8.0) 10-4BME
C0G DF (1.0 2.5) 10-4 31 50%
T/R GSMCDMAGPS
/
ESR
ESR
---
ESR
50Hz
...
MCU
/
20A/ms
ESR
ESR
LDO
DC/DC
DC/DC
Dasheet
0.01F 0.1F
MLCC ESR
BOM
ESR ESR
, PCB
JISC 5102
2 Tan
ESR 1/C
Tan ESR 120Hz Tan
3 Z
Z
ESR
ripplecurrentripple voltage/
ESR
Urms = Irms R
Vrms
Irms
R ESR
ESR
ESR
ESR
1
C = ( 0.224 K A) / TD
C = ( 0.0884 K A) / TD
2
E = . CV2
3
I = C (dV/dt)
4
Z = [ RS
2 + (XC XL)2 ]
5
XC = 1/(2fC)
6
90o
90o
7 (%)
D.F. = tan
= ESR / XC
= (2fC)(ESR)
8
Q = cotan = 1/ DF
9 ESR
ESR = (DF) XC = DF/ 2
10
Power Loss = (2fCV2) (DF)
11
PF = sin (loss angle) cos ()
12
rms = 0.707 Vp
13 KVA
KVA = 2fCV2 10-3
14
T.C. = [ (Ct C25) / C25 (Tt 25) ] 106
15(%)
CD = [ (C1 C2) / C1 ] 100
16
L0 / Lt = (Vt / V0) X (Tt / T0)Y
17
n 1/CT = 1/C1 + 1/C2 + . + 1/Cn
CT = C1 C2 / (C1 + C2)
18
CT = C1 + C2 + . + Cn
19Againg Rate
A.R. = % C / decade of time
K =
A =
TD =
V =
t =
RS =
f=
L =
=
=
L0 =
Lt =
Vt =
V0 =
Tt =
T0 =
X , Y =
X,Y
EMI
L/N/G
Y
0.7mA
0.35mAY
4700pF
Y Y
AC250V AC275V
5000V Y
AC250V DC400V
X
X X
Y X
()
30%X
X AC250V
AC275V 2000V
AC250V DC400V
X
X
Y X
Y X
1MHz 1MHz
Y X
75MHz
0.1u0.01u
10u
0.1F 5H 0.1F
5H 7MHz
10MHz 40MHz
1F10F 20MHz
10 1 10F
C=1/F
10MHz 0.1F100MHz 0.01F
PCB
.
1
4
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~`
3
4 PCB
~~~~~~~~~~~~~~~~~~~~~~~~~~~
ESLESR
1
ESR ESL
ESL C
ESL
LC
1
1
1.6mm
MHz MHz1m F 1.7 820 pF 38.50.1m F 4 680 pF
42.50.01m F 12.6 560 pF 453300pF 19.3 470 pF 491800 pF 25.5 390 pF
541100pF 33 330 pF 60
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
0.1u0.01u 10u
ppxp
RLC
ESR V
0.1F
5H 0.1F 5H
7MHz 10MHz
40MHz 1F10F 20MHz
10
1 10F
0.001~0.1uf
bypass
decoupling
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
(
)
(1)
(2)01
50ma ns ns
(1)
(2)
ic()
0.01~0.1uf
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
50 -- 60
0.1F
5H 0.1F 5H
7MHz 10MHz
40MHz 1F10F 20MHz
10
1 10F
0.001~0.1uf
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~`
bypass
decoupling
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
0.1F
5H 0.1F 5H
7MHz 10MHz
40MHz 1F10F 20MHz
10
1 10F
IC
IC
,,
,(Decoupling),
,(By-pass).
.
,/,,,,
CMOS , 0->1 ,,
,.
PDS(),,
.