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6

2007 04 04

1.
10000F
1000F
10KHz

1
2.
0.1F 1F
3.
100pF 0.1F
LC 1F 10F
CBB LC

(Electric capacity)

F FpF
nF F
FnFpF F
1F1000000F
1F=1000nF=1000000pF
V

63V100V160V250V400V600V1000V

4V6.3V10V16V25V35V50V63V80V100V220V400V

CBB


CBB 2
2

CBB 2 ?br /> 2

CBB
CBB

10n
10nF 100p 100pF 4n7 4.7nF 1
4 pF
471 4710^1 pF=470pF
pF
F
pongo

pF
=0=1=2=3=4=5=6=7=8=9

pF
3 P 5 P 8 P 10 P 12 P 15 P 20 P 39 P 43 P 47 P
51 P 56 P 62 P 68 P 75 P 82 P 91 P 100P 120P 150P
180P 200P 220P 240P 270P 300P 330P 360P 390P 470P

560P 620P 680P 750P


nF
1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6
10 15 18 22 27 33 39 56 68 82
uF
0.1 0.15 0.22 0.33 0.47 1.0 (1.5) 2.2 3.3

AX A 10 x pF,104 0.1uF.

103 10 000 10K102 1K


474 0.47uF

DSP

CL

40p--4u
63--630V

CB

10p--1u
100V--30KV

CBB

1000p--10u

63--2000V

CY

10p--0 1u
100V--7kV

CC

1--6800p
63--500V

CT

10p--4 7u
50V--100V

CI

10p--0 1u
63--400V
200

0 47--10000u
6 3--450V

CACN

0 1--1000u
6 3--125V

100--1500p

15--550p

1--29p

0 3--22p

,,
555 , 7805 ,,,,
.

0.5PF--1UF

1
0 2U
II
:

+130 ,CBB -230,,


.
:
,,,CBB ,,. Q
,.

1
1


0.1F0.01F
10F

1F

,1000F20pF

40450VDC 220

150 000F EPCOS B43504


B43505
10KW

2/
1

2/
RCLC
3
RC
C
RC
i = (V / R)e - (t / CR)

1
2
3
4
5
6
7

Datasheet Solutions

chip capacitor
NP0 or CH K < 150

K 040206030805
0603 10nF

X7R or YB 2000 < K < 4000 ,


C < 10%
Y5V or YFK >
15000 X7R C < +20% -80%
K

1
0.1F 22000F

2
0.1pF 10F
XY EMI/EMC
3
2.2F 560FESR
ESL

0.5pF 100F

5
0.022F 70F
/

MLCC

MLCC

LCD
0.5mm

150


X7RX5R

1000pF
ESR
C0G
1000pF tg(DF)
NME C0G
DF (2.0 8.0) 10-4BME
C0G DF (1.0 2.5) 10-4 31 50%

T/R GSMCDMAGPS
/

ESR
ESR

---

ESR

50Hz
...

MCU
/
20A/ms

ESR
ESR

LDO

DC/DC

DC/DC

Dasheet
0.01F 0.1F
MLCC ESR
BOM

ESR ESR

, PCB

JISC 5102

120Hz 0.5VrmsDC bias 1.5 2.0V

2 Tan
ESR 1/C
Tan ESR 120Hz Tan

3 Z
Z
ESR

Z = [ESR2 + (XL - XC)2 ]


XC = 1 / C = 1 / 2fC
XL = L = 2fL
XC
XL ESR
XL
4


ripplecurrentripple voltage/
ESR
Urms = Irms R
Vrms
Irms
R ESR
ESR

ESR
ESR

1
C = ( 0.224 K A) / TD
C = ( 0.0884 K A) / TD
2
E = . CV2

3
I = C (dV/dt)
4
Z = [ RS
2 + (XC XL)2 ]
5
XC = 1/(2fC)
6
90o
90o

7 (%)
D.F. = tan
= ESR / XC
= (2fC)(ESR)
8
Q = cotan = 1/ DF
9 ESR
ESR = (DF) XC = DF/ 2
10
Power Loss = (2fCV2) (DF)

11
PF = sin (loss angle) cos ()
12
rms = 0.707 Vp
13 KVA
KVA = 2fCV2 10-3
14
T.C. = [ (Ct C25) / C25 (Tt 25) ] 106
15(%)
CD = [ (C1 C2) / C1 ] 100
16
L0 / Lt = (Vt / V0) X (Tt / T0)Y
17
n 1/CT = 1/C1 + 1/C2 + . + 1/Cn
CT = C1 C2 / (C1 + C2)
18
CT = C1 + C2 + . + Cn
19Againg Rate
A.R. = % C / decade of time

K =

A =
TD =
V =
t =
RS =
f=

L =
=
=
L0 =
Lt =
Vt =
V0 =
Tt =
T0 =
X , Y =

X,Y
EMI

L/N/G
Y

0.7mA
0.35mAY
4700pF
Y Y
AC250V AC275V
5000V Y
AC250V DC400V
X
X X
Y X

()
30%X
X AC250V
AC275V 2000V
AC250V DC400V
X

X
Y X

KHz MHz MHz

Y X

1MHz 1MHz
Y X

75MHz

0.1u0.01u
10u

0.1F 5H 0.1F
5H 7MHz
10MHz 40MHz
1F10F 20MHz
10 1 10F

C=1/F
10MHz 0.1F100MHz 0.01F

PCB
.
1

4
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~`

3
4 PCB

~~~~~~~~~~~~~~~~~~~~~~~~~~~

ESLESR
1

ESR ESL

ESL C

ESL

LC

1
1
1.6mm
MHz MHz1m F 1.7 820 pF 38.50.1m F 4 680 pF
42.50.01m F 12.6 560 pF 453300pF 19.3 470 pF 491800 pF 25.5 390 pF
541100pF 33 330 pF 60

~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

0.1u0.01u 10u

ppxp

RLC
ESR V

0.1F
5H 0.1F 5H
7MHz 10MHz
40MHz 1F10F 20MHz
10
1 10F

C=1/F 10MHz 0.1F100MHz 0.01F


uf

0.001~0.1uf

bypass
decoupling

~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

(
)

(1)
(2)01

50ma ns ns

(1)
(2)

ic()

0.01~0.1uf

(1) (2) (3) (4)

~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
50 -- 60

0.1F
5H 0.1F 5H
7MHz 10MHz
40MHz 1F10F 20MHz
10
1 10F

C=1/F 10MHz 0.1F100MHz 0.01F


uf

0.001~0.1uf

~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~`

bypass
decoupling

~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

0.1F
5H 0.1F 5H
7MHz 10MHz
40MHz 1F10F 20MHz
10
1 10F

C=1/F 10MHz 0.1F100MHz 0.01F


~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~

IC
IC

,,
,(Decoupling),
,(By-pass).
.

,/,,,,
CMOS , 0->1 ,,
,.
PDS(),,
.

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