Study of IGBT and MOSFET Switching Characteristics

Theory:

Fig. 1 Switch Vs=voltage drop across the switch is=Current through the switch Properties of an ideal switch: 1. O State Property: Vs=!" < is < H #. OFF State Property: is=!" < Vs < H $. Fro% O to OFF ti%e" toff=! i.e." &a' to &(' in )ero ti%e through the path shown (y arrows in Fig. #&a'. Otherwise" power is dissipated as is and Vs (oth will (e present.

Fig. #&a' *deal Switch Turn OFF Characteristics +. Fro% OFF to O " ton=!. ,nergy dissipated during turn O process = turn O loss=!.

Fig. #&(' *deal Switch Turn O Charactersitics -. o energy is consu%ed in the driver circuit of the switch. &.ate or (ase current loss=!'

/. The characteristics should (e sta(le with respect to a%(ient te%perature. For a practical switch" the following losses will occur. a. Conduction loss (. 0loc1ing 2oss c. Turn on loss d. Turn off loss e. 3river circuit loss Power electronic se%iconductor switching devices are classified into three %ain categories: 1. 4ncontrolled: ,5: 3iode since its O 6OFF depends on e5ternal circuit. 7e cannot control. #. Se%i controlled: ,5: Thyristor since its O state can (e controlled (ut its OFF state cannot (e controlled. *t depends on e5ternal circuitry. $. Fully Controlled6Controlled: 8ll other se%iconductor devices li1e 9OSF,T" *.0T" 0:T etc.

I. Metal Oxide Semiconductor Field Effect Transistor MOSFET!"

Fig. $ n;channel enhance%ent type 9OSF,T 9OSF,T is a three ter%inal &Gate" #rain and Source' full controlled switch used for high fre<uency applications &=1!! 1>)' .ate6Control Signal: 0etween .ate and Source Switch Ter%inals: 0etween 3rain and Source

O State ,<uivalent Circuit of 9OSF,T:

Fig. + O state ,<uivalent Circuit of 9OSF,T OFF State ,<uivalent Circuit of 9OSF,T:

Fig. - OFF State ,<uivalent Circuit of 9OSF,T

Switching Characteristics:

Fig. /. Output Characteristics of a 9OSF,T

Fig. ?. Switching Characteristics of a 9OSF,T

0loc1 3iagra%:

Fig. @. 0loc1 3iagra% for finding the Switching Characteristics of a 9OSF,T 8ctual .ate Circuit 3iagra%:

Fig. A. S. $-#+ .ate 3river Circuit ,5peri%ental Procedure:

1. Belease the gate pulses fro% S. $-#+ *C to gate driver card. Select

suita(le switching fre<uency &1!! 1>)' and duty ratio &C!.-'.

#. Turn O the +!V 3c source. $. O(serve the wave for%s of voltage across and current through the 9OSF,T. +. Ta(ulate the losses occurring in the switching device. -. Bepeat steps 1;+ for different switching fre<uencies and duty ratio. O(servation: 1. O(serve the turn O and turn OFF transient in the practical 9OSF,T in CBO #. ote the loss occurred during conduction" (loc1ing" and switching in the device. $. 8lso" see the reverse recovery characteristics of the diode Besults to (e Beported:
*nput Voltage Vin &volts' Switching Fre<uency fs h) 3uty Batio 3 Conduction 2oss &7' 0loc1ing 2oss &7' Turn O 2oss &7' Turn OFF 2oss &7'

vDS iD
volts 8%ps

1. Beport the %easured threshold voltage" #. Plot iD vs.

vth

vDS

characteristics.

II. Insulated Gate Bi$olar Transistor IGBT!"

Fig. 1! n;channel *.0T

8n *.0T is a three ter%inal &Gate" Collector and E%itter' full controlled switch and can (e used for applications up to 1?!! V and 1#!! 8 .ate6Control Signal: 0etween .ate and ,%itter Switch Ter%inals: 0etween 3rain and ,%itter ,<uivalent Circuit of *.0T:

Fig. 11 ,<uivalent Circuit of *.0T Switching Characteristics:

Fig. 1#. Output Characteristics of *.0T

Fig. 1$. Switching Characteristics of an *.0T 0loc1 3iagra%:

Fig. 1+. 0loc1 3iagra% for finding the Switching Characteristics of an *.0T 8ctual .ate Circuit 3iagra%:

Fig. 1-. .ate 3rive Circuit of *.0T ,5peri%ental Procedure:

1. .ive power supply to the .ate 3river Card and S. $-#+. Select #. $. +. -.

suita(le switching fre<uency &1! 1>)' and duty ratio &C!.-'. Turn O the +!!V 3c source o(tained fro% diode rectifier. O(serve the wave for%s of voltage across and current through the *.0T. Ta(ulate the losses occurring in the switching device. Bepeat steps 1;+ for different switching fre<uencies and duty ratio.

O(servation: 1. O(serve the turn O and turn OFF transient in the practical 9OSF,T in CBO #. ote the loss occurred during conduction" (loc1ing" and switching in the device. $. 8lso" see the reverse recovery characteristics of the diode

Besults to (e Beported:
*nput Voltage Vin &volts' Switching Fre<uency fs h) 3uty Batio 3 Conduction 2oss &7' 0loc1ing 2oss &7' Turn O 2oss &7' Turn OFF 2oss &7' ,fficiency D

vCE iC
volts 8%ps

1. Beport the %easured threshold voltage" #. Plot iC vs.

vGEth

vCE

characteristics.