UNISONIC TECHNOLOGIES CO.

, LTD 2N60
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
1 1
1

Power MOSFET

TO-220

TO 220F
.

The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

TO-220F1

TO-262

FEATURES

1
TO-251

1
TO-252

* RDS(ON) = 5@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness

1
TO-126

1
TO-251 L

SYMBOL
2
.

Dran

1 TO-126C

S Source
.

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2N60
ORDERING INFORMATION
Package TO-220 TO-220F1 TO-220F TO-251 TO-251L TO-252 TO-252 TO-262 TO-126 TO-126C Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Ordering Number Lead Free Halogen Free 2N60L-TA3-T 2N60G-TA3-T 2N60L-TF1-T 2N60G-TF1-T 2N60L-TF3-T 2N60G-TF3-T 2N60L-TM3-T 2N60G-TM3-T 2N60L-TMA-T 2N60G-TMA-T 2N60L-TN3-R 2N60G-TN3-R 2N60L-TN3-T 2N60G-TN3-T 2N60L-T2Q-T 2N60G-T2Q-T 2N60L-T60-K 2N60G-T60-K 2N60L-T6C-K 2N60G-T6C-K Note: Pin Assignment: G: Gate D: Drain S: Source
2N60L-TA3-T

Power MOSFET

Packing Tube Tube Tube Tube Tube Tape Reel Tube Tube Bulk Bulk

(1) T: Tube, R: Tape Reel, K:Bulk

(l)Packing Type
(2) Package Type

(2) TAS: TO-220, TF1: TO-220F1, TF3: TO-220F

TIV13: TO-251, TMA:TO-251 L, TN3: TO-252,

T2Q: TO-262, T60: TO-126, T6C:TO-126C

(3) Lead Free

(3) G: Ha|ogen Freei L: Lead Free

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2N60
ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)

Power MOSFET

PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 2.0 A 2.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 8.0 A 140 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/ TO-262 54 W PD TO-220F/TO-220F1 23 W Power Dissipation TO-251/TO-251L/TO-252 (TC = 25) 44 W TO-126/TO-126C 40 W Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25C 4. ISD2.4A, di/dt200A/s, VDD BVDSS, Starting TJ = 25C

THERMAL DATA
PARAMETER SYMBOL JA RATINGS 62.5 62.5 100 89 2.32 5.5 2.87 3.12 UNIT /W /W /W /W /W /W /W /W

PACKAGE TO-220/ TO-262 TO-220F/TO-220F1 Junction to Ambient TO-251/TO-251L/TO-252 TO-126/TO-126C TO-220/ TO-262 TO-220F/TO-220F1 Junction to Case TO-251/TO-251L/TO-252 TO-126/TO-126C

Jc

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2N60
ELECTRICAL CHARACTERISTICS (TJ =25, unless otherwise specified)
SYMBOL BVDSS IDSS TEST CONDITIONS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current

Power MOSFET

MIN TYP MAX UNIT

VGS = 0V, ID = 250A 600 V VDS = 600V, VGS = 0V 10 A 100 nA Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250A, Referenced to 25C 0.4 V/ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250A 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 3.6 5 DYNAMIC CHARACTERISTICS 270 350 pF Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS 40 50 pF f =1MHz Reverse Transfer Capacitance CRSS 5 7 pF SWITCHING CHARACTERISTICS 10 30 ns Turn-On Delay Time tD (ON) Turn-On Rise Time tR 25 60 ns VDD =300V, ID =2.4A, RG=25 (Note 1, 2) Turn-Off Delay Time tD(OFF) 20 50 ns Turn-Off Fall Time tF 25 60 ns Total Gate Charge QG 9.0 11 nC VDS=480V, VGS=10V, Gate-Source Charge QGS 1.6 nC ID=2.4A (Note 1, 2) Gate-Drain Charge QGD 4.3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V Continuous Drain-Source Current ISD 2.0 A Pulsed Drain-Source Current ISM 8.0 A 180 ns Reverse Recovery Time trr VGS = 0 V, ISD = 2.4A, di/dt = 100 A/s (Note 1) Reverse Recovery Charge QRR 0.72 C Notes: 1. Pulse Test: Pulse width 300s, Duty cycle2% 2. Essentially independent of operating temperature

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2N60
TEST CIRCUITS AND WAVEFORMS
+ VDS + L

Power MOSFET

D.U.T.

RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD

Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period

VGS= 10V

IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt

Body Diode Recovery dv/dt VDS (D.U.T.) VDD

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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2N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Rl

Power MOSFET

VDs VGs
Rg vDD
10V
Pulse Wdth<1|JS

VDS

90%

DUT
. .

VGS

10%
tD(ON) tR tD(OFF) tF

DutyFactoi<0.1%

Switching Test Circuit

Switching Waveforms

VGS QG

c0ko
12V

bUKU
0 2|jF
.

Same Type
as D.U.T.

10V QGS

0.3|jF
VDs

QGD

Vqs
DUT 3mA

Charge

Gate Charge Test Circuit

Gate Charge Waveform

Vos

BVDSS IAS
VDD

ID(t) VDD

VDS(t)

10V

DUT
. .

tp

tp

Time

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

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2N60
TYPICAL CHARACTERISTICS
300 Drain Current, ID (A) 250 200 150 100 50 0 Drain Current, ID (A) Drain Current vs. Drain-Source Breakdown Voltage

Power MOSFET

Drain Current vs. Gate Threshold Voltage 300 250 200 150 100 50 0 0

0 200 600 800 1000 400 Drain-Source Breakdown Voltage, BVDSS (V)

0.5 1 1.5 2 2.5 3 3.5 Gate Threshold Voltage, VTH (V)

Drain-Source On-State Resistance

Characteristics

Drain Current vs. Source to Drain Voltage

Continuous Drain-Source Current, ISD (A)

1 2 3 4 Drain to Source Voltage, VDs (V) 5

12
.

25
.

10
.

20
.

Drain Current, ID (A)

08
.

15
.

06
.

10
.

04
.

05
.

02
.

0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, Vsd (V)

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

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