Renesas Diode Data Book

To our customers,
Old Company Name in Catalogs and Other Documents

On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010 Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: Standard, High Quality, and Specific. The recommended applications for each Renesas Electronics product depends on the products quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as Specific without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as Specific or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is Standard unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. High Quality: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. Specific: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. Standard:
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(Note 1) Renesas Electronics as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) Renesas Electronics product(s) means any product developed or manufactured by or for Renesas Electronics.
Renesas Diode
Data Book
www.renesas.com
2009.03
Renesas Diode Data Book
REJ04G0001-0100
Contents
Lineup
................................................................................................................................................................ ............................................................................................................. ....................................................................................................... ............................................................................. 5 12 21 25 29 39 42 60 70 72 72
Standard Package Dimensions
Nomenclature of Renesas Diodes
Renesas Diode Symbols and Their Definitions Reliability of Renesas Diodes
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Renesas Diode Manufacturing Process and Quality Control Precautions for Application
...................................................................................................................... ............................................................................................................ .............................................................
Standard Taping Specifications
Selection Table According to Main Diode Applications Data Sheets
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Variable Capacitance Diodes for VCO ..................................................................................................................
Variable Capacitance Diodes for Electronic Tuning ............................................................................................... 124 High Frequency Switching Diodes ......................................................................................................................... 148 PIN Diodes for Antenna Switch ............................................................................................................................. 152 PIN Diodes for Attenuators .................................................................................................................................... 180 Small Signal Diodes .............................................................................................................................................. 190 Schottky Barrier Diodes for Detector and Mixer .................................................................................................... 225 Schottky Barrier Diodes for High Speed Switching ................................................................................................ 259 Diodes for System Protection ................................................................................................................................ 363 Zener Diodes for Surge Absorption ....................................................................................................................... 367 Zener Diodes for Stabilized Power Supply ............................................................................................................ 425 Note: Please check latest data by web site.
Notes regarding these materials

1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com) Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries.
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Lineup
Variable Capacitance Diodes for VCO
Application VCO Package URP Part No. HVU17 HVU350B HVU355B HVU359 HVU362 HVU383B UFP HVC350B HVC355B HVC358B HVC359 HVC362 HVC365 HVC368B HVC374B HVC375B HVC376B HVC383B HVC385B HVC386B HVD350B HVD355B HVD358B HVD359 HVD362 HVD365 HVD368B HVD374B HVD376B HVD385B HVD396C HVD399C HVL355C HVL358C HVL368C HVL375C HVL385C HVL396C HVL399C RKV603KL RKV604KL RKV605KL RKV606KL RKV607KL RKV608KL RKV600KP RKV601KP RKV603KP RKV604KP RKV605KP RKV606KP RKV607KP RKV608KP HVB350BYP Ratings VR (V) 15 15 15 15 15 15 15 15 15 15 15 15 10 10 10 15 15 15 15 15 15 15 15 15 15 10 10 15 15 10 10 15 15 10 10 15 10 10 15 15 10 15 15 15 15 15 15 15 10 15 15 15 15 Characteristics C (pF) n C1 = 50.0 to 85.0, C3 = 16.1 to 27.3, 5.6 min C4.5 = 5.23 to 8.84 C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min C1 = 6.4 to 7.2, C4 = 2.55 to 2.95 2.2 min C1 = 24.8 to 29.8, C4 = 6.0 to 8.3 3.0 min C1 = 41.6 to 49.9, C10 = 10.1 to 14.8 3.0 min C1 = 19.0 to 21.0, C4 = 8.5 to 10.0, 2.0 min C7 = 4.5 to 5.5 3.5 min C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min C1 = 6.4 to 7.2, C4 = 2.55 to 2.95 2.2 min C1 = 19.5 to 21.0, C4 = 8.0 to 9.3 2.2 min C1 = 24.8 to 29.8, C4 = 6.0 to 8.3 3.0 min C1 = 41.6 to 49.9, C4 = 10.1 to 14.8 3.0 min C1 = 27.05 to 28.55, C4 = 6.05 to 7.55 3.0 min C1 = 15.0 to 16.5, C2 = 9.0 to 10.2, C3 = 5.0 to 6.0 2.2 min C1 = 21.5 to 24.0, C2 = 12.5 to 14.5 1.68 to 1.75 C1 = 15.0 to 16.5, C3 = 5.0 to 6.0, C4 = 3.3 to 4.0 4.0 min C0.2 = 39.5 to 44.5, C1 = 25.0 to 28.5, 4.3 min C2.3 = 8.75 to 12.05, C4 = 4.8 to 6.8 3.55 min C1 =19.0 to 21.0, C4 = 8.5 to 10.0, C7 = 4.5 to 5.5 2.0 min 3.5 min C0.5 = 7.2 to 7.7, C2.5 = 2.7 to 3.2 2.43 to 2.57 C1 = 43.0 to 49.0, C4 = 18.5 to 25.5 1.8 min C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min C1 = 6.4 to 7.2, C4 = 2.55 to 2.95 2.2 min C1 = 19.5 to 21.0, C4 = 8.0 to 9.3 2.2 min C1 = 24.8 to 29.8, C4 = 6.0 to 8.3 3.0 min C1 = 41.6 to 49.9, C4 = 10.1 to 14.8 3.0 min C1 = 27.05 to 28.55, C4 = 6.05 to 7.55 3.0 min C1 = 15.0 to 16.5, C2 = 9.0 to 10.2, C3 = 5.0 to 6.0 2.2 min C1 = 21.5 to 24.0, C2 = 12.5 to 14.5 1.68 to 1.75 C0.2 = 39.5 to 44.5, C1 = 25.0 to 28.5, 4.3 min C2.3 = 8.75 to 12.05, C4 = 4.8 to 6.8 3.55 min C0.5 = 7.2 to 7.7, C2.5 = 2.7 to 3.2 2.43 to 2.57 C1 = 14.6 to 15.8, C4 = 5.2 to 5.8 2.62 min C0.5 = 18.5 to 20.0, C2.5 = 7.3 to 8.6 2.30 to 2.46 C1 = 6.62 to 7.02, C4 = 2.60 to 2.95 2.35 to 2.55 C1 = 19.5 to 20.9, C4 = 8.30 to 8.95 2.20 to 2.43 C1 = 15.0 to 16.5, C2 = 9.0 to 10.2, C3 = 5.0 to 6.0 2.2 min C1 = 15.0 to 16.5, C3 = 5.0 to 6.0, C4 = 3.3 to 4.0 4.0 min C0.5 = 7.3 to 7.7, C2.5 = 2.90 to 3.18 2.43 to 2.57 C1 = 14.6 to 15.8, C4 = 5.2 to 5.8 2.62 min C0.5 = 18.5 to 20.0, C2.5 = 7.3 to 8.6 2.30 to 2.46 C0.5 = 7.38 to 7.92, C2.5 = 3.26 to 3.58 2.1 to 2.4 C1 = 2.35 to 2.70, C3 = 1.22 to 1.42 1.73 to 2.10 C0.5 = 18.5 to 20.0, C2.5 = 8.55 to 9.45 2.02 to 2.26 C1 = 3.18 to 3.50, C3 = 1.63 to 1.80 1.81 to 2.08 C1 = 2.03 to 2.20, C3 = 1.05 to 1.20 1.75 to 2.00 C1 = 4.18 to 4.52, C4 = 1.85 to 2.11 2.13 to 2.27 C1 = 6.62 to 7.02, C4 = 2.60 to 2.95 2.35 to 2.55 C0.5 = 7.3 to 7.7, C2.5 = 2.90 to 3.18 2.43 to 2.57 C0.5 = 7.38 to 7.92, C2.5 = 3.26 to 3.58 2.1 to 2.4 C1 = 2.35 to 2.70, C3 = 1.22 to 1.42 1.73 to 2.10 C0.5 = 18.5 to 20.0, C2.5 = 8.55 to 9.45 2.02 to 2.26 C1 = 3.18 to 3.50, C3 = 1.63 to 1.80 1.81 to 2.08 C1 = 2.03 to 2.20, C3 = 1.05 to 1.20 1.75 to 2.00 C1 = 4.18 to 4.52, C4 = 1.85 to 2.11 2.13 to 2.27 C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min CVR/CVR 1/4.5 1/4 1/4 1/4 1/4 1/4 1/7 1/4 1/4 1/4 1/4 1/4 1/4 1/3 1/2 1/4 1/4 0.2/2.3 1/4 1/7 0.5/2.5 1/4 1/4 1/4 1/4 1/4 1/4 1/4 1/3 1/2 1/4 0.2/2.3 0.5/2.5 1/4 0.5/2.5 1/4 1/4 1/3 1/4 0.5/2.5 1/4 0.5/2.5 0.5/2.5 1/3 0.5/2.5 1/3 1/3 1/4 1/4 0.5/2.5 0.5/2.5 1/3 0.5/2.5 1/3 1/3 1/4 1/4 rs () max 0.5 0.6 1.5 2 0.5 0.5 0.6 0.4 1.5 2 1.5 1.1 1.2 1.1 0.8 0.5 0.75 0.85 0.5 0.6 0.4 1.5 2 1.5 1.1 1.2 0.8 0.75 0.4 0.4 0.6 0.4 1.1 1.1 0.75 0.4 0.4 0.75 0.7 0.4 0.75 0.85 0.75 0.6 0.75 0.75 0.7 0.4 0.75 0.85 0.75 0.5 Page 72 74 76 78 80 82 74 76 98 80 84 86 88 90 92 82 94 96 74 76 98 78 80 84 86 88 92 94 100 102 104 106 86 90 108 100 102 110 112 114 116 118 120 104 108 110 112 114 116 118 120 122
SFP
EFP
MP6
CMPAK-4
Lineup
Variable Capacitance Diodes for Electronic Tuning

Application Digital audio Package SFP EFP Part No. RKV651KK RKV650KL RKV651KL RKV652KL RKV653KL RKV650KP RKV652KP RKV653KP HVU316 HVC316 HVD316 HVU202B HVU326C RKV500KG HVC202B HVC326C RKV500KJ HVD326C RKV500KK HVU300C HVU306C HVU307 HVU327C HVU328C HVU363B RKV501KG RKV502KG HVC300C HVC306C HVC307 HVC327C HVC328C HVC363B RKV501KJ RKV502KJ HVD327C HVD328C RKV501KK RKV502KK HVC308A HVM16 Ratings VR (V) 15 15 15 10 10 15 10 10 30 30 30 32 15 34 32 15 34 15 34 34 34 32 15 15 32 34 34 34 34 32 15 15 32 34 34 15 15 34 34 35 14 Characteristics C (pF) n C0.2 = 29.5 to 33.0, C2.3 = 7.80 to 10.7 2.9 to 4.1 C0.5 = 7.2 to 7.8, C2.5 = 2.05 to 2.35 3.25 to 3.70 C0.2 = 29.5 to 33.0, C2.3 = 7.80 to 10.7 2.9 to 4.1 C1 = 2.9 to 3.3, C3 = 1.12 to 1.30 2.28 to 2.90 C1 = 2.6 to 2.9, C3 = 0.97 to 1.08 2.40 to 3.05 C0.5 = 7.2 to 7.8, C2.5 = 2.05 to 2.35 3.25 to 3.70 C1 = 2.9 to 3.3, C3 = 1.12 to 1.30 2.28 to 2.90 C1 = 2.6 to 2.9, C3 = 0.97 to 1.08 2.40 to 3.05 C1 = 5.16 to 7.22, C25 = 0.48 to 0.76 9.0 min C1 = 5.16 to 7.22, C25 = 0.48 to 0.76 9.0 min C1 = 5.16 to 7.22, C25 = 0.48 to 0.76 9.0 min C2 = 14.15 to 15.75, C25 = 2.06 to 2.35 6.3 min C1 = 13.0 to 16.0, C10 = 2.0 to 2.3 6.0 min C2 = 14.15 to 15.75, C25 = 1.89 to 2.18 6.3 min C2 = 14.15 to 15.75, C25 = 2.06 to 2.35 6.3 min C1 = 13.0 to 16.0, C10 = 2.0 to 2.3 6.0 min C2 = 14.15 to 15.75, C25 = 1.89 to 2.18 6.3 min C1 = 13.0 to 16.0, C10 = 2.0 to 2.3 6.0 min C2 = 14.15 to 15.75, C25 = 1.89 to 2.18 6.3 min C2 = 39.5 to 47.0, C25 = 2.6 to 3.0 14.5 min C2 = 29.5 to 34.0, C25 = 2.57 to 2.90 11.0 min C2 = 32.2 to 37.5, C25 = 2.57 to 3.00 12.0 min C1 = 30.5 to 33.5, C10 = 2.6 to 2.9 11.0 min C1 = 41.0 to 45.0, C10 = 2.6 to 2.9 14.5 min C1 = 36.0 to 42.0, C28 = 2.36 to 2.75 13.7 min C2 = 29.5 to 34.0, C25 = 2.45 to 2.78 11.0 min C2 = 41.5 to 47.0, C25 = 2.6 to 3.0 14.5 min C2 = 39.5 to 47.0, C25 = 2.6 to 3.0 14.5 min C2 = 29.5 to 34.0, C25 = 2.57 to 2.90 11.0 min C2 = 32.2 to 37.5, C25 = 2.57 to 3.00 12.0 min C1 = 30.5 to 33.5, C10 = 2.6 to 2.9 11.0 min C1 = 41.0 to 45.0, C10 = 2.6 to 2.9 14.5 min C1 = 36.0 to 42.0, C28 = 2.36 to 2.75 13.7 min C2 = 29.5 to 34.0, C25 = 2.45 to 2.78 11.0 min C2 = 41.5 to 47.0, C25 = 2.6 to 3.0 14.5 min C1 = 30.5 to 33.5, C10 = 2.6 to 2.9 11.0 min C1 = 41.0 to 45.0, C10 = 2.6 to 2.9 14.5 min C2 = 29.5 to 34.0, C25 = 2.45 to 2.78 11.0 min C2 = 41.5 to 47.0, C25 = 2.6 to 3.0 14.5 min C2 = 13.7 to 15.9, C20 = 1.65 to 2.06 7.12 min C2 = 43.0 to 48.1, C8 = 24.6 to 29.2 1.65 to 1.75 CVR/CVR 0.2/2.3 0.5/2.5 0.2/2.3 1/3 1/3 0.5/2.5 1/3 1/3 1/25 1/25 1/25 2/25 1/10 2/25 2/25 1/10 2/25 1/10 2/25 2/25 2/25 2/25 1/10 1/10 1/28 2/25 2/25 2/25 2/25 2/25 1/10 1/10 1/28 2/25 2/25 1/10 1/10 2/25 2/25 2/20 2/8 rs () max 0.6 0.75 0.6 1.1 1.8 0.75 1.1 1.8 1.2 2.2 2.2 0.57 0.6 0.57 0.57 0.6 0.57 0.6 0.57 1.1 0.75 0.85 0.8 1.2 0.75 0.75 1.1 1.1 0.75 0.85 0.8 1.2 0.75 0.75 1.1 0.8 1.2 0.75 1.1 0.95 Page 124 126 128 124 126 128 130 132 134 132 134 132 134 136 138 140 142 136 138 140 142 136 138 140 142 144 146
MP6
BS/CS Tuner TV Tuner
Tuning Tuner UHF Tuning
URP UFP SFP URP
UFP
SFP VHF Tuning URP
UFP
SFP
FM Tuner
AFC Tuning
UFP MPAK
High Frequency Switching Diodes

Ratings VR (V) 35 35 35 35 35 35 IF (mA) Pd (mW) 150 150 150 150 150 150 VF (V) max. 1.0 1.0 1.0 1.0 1.0 1.0 IF (mA) 10 10 10 10 10 10 C (pF) max. 1.2 1.2 1.2 0.8 1.2 0.8 Characteristics VR (V) 6 6 6 6 6 6 f (MHz) 1 1 1 1 1 1 rf ( ) max. 0.9 0.7 0.7 0.7 0.7 0.7 IF (mA) 2 2 2 2 2 2 f (MHz) 100 100 100 100 100 100
Application High frequency switching
Package MPAK URP UFP SFP
Part No. HSM2694 HSU277 HSC277 RKS151KJ RKS150KK RKS151KK
Page 148 148 150
Lineup
PIN Diodes for Antenna Switch

Ratings VR (V) 60 60 60 60 30 60 60 60 30 30 60 30 30 30 30 60 30 30 30 30 30 30 30 30 30 30 30 IF (mA) 100 50 100 100 100 50 100 100 100 100 50 100 100 100 100 50 100 100 100 100 100 100 100 100 100 100 100 Pd (mW) 150 150 150 150 150 150 150 150 150 150 150 150 150 100 100 100 100 100 100 100 100 100 100 100 100 100 100 VF (V) max. 1 0.9 1 1 1 0.9 1 1 1 0.9 0.9 1 0.9 1 0.9 0.9 1 0.9 1 1 1 1 1 1 1 1 0.9 1 IF (mA) 10 2 10 10 10 2 10 10 10 2 2 10 2 10 2 2 10 2 10 10 10 10 10 10 10 10 2 10 C (pF) max. 0.8 0.45 0.8 0.5 0.35 0.45 0.8 0.5 0.35 0.43 0.45 0.31 0.35 0.35 0.43 0.45 0.31 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.31 0.35 0.35 0.35 0.35 0.35 0.35 0.31 0.31 0.35 0.35 0.35 0.35 0.31 0.35 0.35 Characteristics VR (V) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 f (MHz) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 rf ( ) max. 1 1.8 1 2 1.3 1.8 1 2 1.3 1.8 1.8 2.5 typ 1.5 2 1.3 1.8 1.8 2.5 typ 1.5 2 1.3 1.1 1.3 1.3 1.3 1.3 1.3 1.3 2 1.3 2.5 1.5 1.3 1.3 2 1.3 2 1.3 1.3 2 1.3 2 2.5 1.5 2.5 1.5 2 1.3 2 1.3 1.3 2.5 1.5 1.3 2 1.3 IF (mA) 10 10 10 10 10 10 10 10 10 2 10 2 10 2 10 2 10 2 10 2 10 10 10 10 10 10 10 10 2 10 2 10 10 10 2 10 2 10 10 2 10 2 2 10 2 10 2 10 2 10 10 2 10 10 2 10 f (MHz) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100
Application Antenna switching
Package URP UFP
SFP
Part No. HVU131 HVU145 HVC131 HVC132 HVC142A HVC145 HVD131 HVD132 HVD142A HVD144A HVD145 HVD147 RKP201KK HVL142A HVL144A HVL145 HVL147 RKP201KL RKP200KP RKP204KP RKP450KE RKP451KE RKP452KE RKP453KE RKP454KE RKP400KS RKP401KS
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EFP
MP6 MP6-8
MFP12
RKP402KS RKP403KS RKP404KS RKP405KS RKP406KS RKP407KS RKP408KS RKP409KS
30 30 30 30 30 30 30 30
100 100 100 100 100 100 100 100
100 100 100 100 100 100 100 100
1 1 0.9 1 0.9 1 1 0.9 1 0.9 1 1 0.9 1 0.9 1 1 1 1 0.9 1
10 10 2 10 2 10 10 2 10 2 10 10 2 10 2 10 10 10 10 2 10
100 100 100 100 100 100 100 100
RKP410KS RKP411KS RKP412KS RKP413KS RKP414KS RKP415KS
30 30 30 30 30 30
100 100 100 100 100 100
100 100 100 100 100 100
1 1 1 1 1 1
1 1 1 1 1 1
100 100 100 100 100 100
Lineup
PIN Diodes for Attenuators

Ratings VR (V) 50 50 50 60 60 60 30 30 30 30 30 30 50 30 30 60 50 50 30 30 60 IF (mA) 50 50 50 50 50 50 50 50 100 100 50 100 50 50 100 50 50 50 50 100 50 Pd (mW) 100 100 100 100 100 100 100 100 100 150 100 150 150 100 150 100 100 100 100 100 100 VF (V) max. 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 IF (mA) 50 50 50 10 10 10 10 10 10 10 10 10 50 10 10 10 50 50 10 10 10 C (pF) max. 0.25 typ 0.25 typ 0.25 typ 2.4 2.4 1.8 0.3 0.25 0.3 0.37 0.25 0.3 0.35 0.25 0.3 2.4 0.25 typ 0.35 0.25 0.3 2.4 Characteristics VR (V) 50 50 50 0 0 0 1 1 20 1 1 20 50 1 20 0 50 50 20 20 0 f (MHz) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 rf ( ) max. 7 7 7 5.5 5.5 5.5 3.2 3.7 2.5 2.5 3.7 2.5 5 3.7 2.5 5.5 7 5 3.7 2.5 5.5 IF (mA) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 f (MHz) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100
Application Attenuator
Package MPAK
EFP
SFP
UFP
URP CMPAK
CMPAK-4
Part No. HVM14 HVM14S HVM14SR HVM187S HVM187WK HVM189S HVL192 RKP300KL RKP301KL HVD191 RKP300KK RKP301KK HVC190 RKP300KJ RKP301KJ HVU187 HVB14S HVB190S RKP300WKQE RKP301WKQE HVB187YP
Page 180 180 180 182 182 184 184 186 184 182 180 188
Small Signal Diodes

Ratings VR (V) 30 30 60 30 60 30 60 35 60 80 80 80 80 80 80 80 80 80 80 80 80 80 80 150 200 250 150 200 250 250 250 400 250 400 250 250 IO (mA) 100 150 150 150 150 150 150 110 150 100 100 100 100 100 100 100 100 100 100 100 100 100 200 200 200 150 150 150 150 100 150 100 100 100 100 IFSM (A) 0.6 1 1 1 1 1 1 0.4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 1 1 1 1 1 1 1 2 1 2 2 2 2 Pd (mW) 250 250 250 250 250 250 250 300 400 400 400 400 400 400 150 VF (V) max. 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1.2 0.8 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1 1 1 1 1 1 1 1.2 1.2 1.2 1.5 1.2 1.2 IF (mA) 10 10 10 10 10 10 10 100 10 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 Characteristics trr C (ns) (pF) IF max. max. (mA) 8 10 3.5 8 10 3 8 10 3 3.5 10 3 3.5 10 3 3.5 10 3 3.5 10 3 3 10 3 3 10 3 3 10 4 100 10 4 3 10 2 3 10 2 20 10 4 3 10 2 3 10 2 3 10 2 3 10 2 3 10 2 3 10 2 100 10 4 20 10 4 3 10 2 100 30 1.5 typ 100 30 1.5 typ 100 30 1.5 typ 100 30 1.5 typ 100 30 1.5 typ 100 30 1.5 typ 100 30 1.5 typ 100 30 3 20(s 30 10 ) 100 30 3 100 30 3 100 30 3 100 30 3 VR (V) 1 1 1 1 1 1 1 0.5 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 f (MHz) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
Application High speed switching
Package DO-35
MHD
LLD MPAK
URP UFP SFP CMPAK
High voltage switching
DO-35
MHD
LLD MPAK
Part No. 1S2075(K) 1S2076 1S2076A 1SS119 1SS120 1SS270 1SS270A HSS104 HSK120 HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C HSU119 RKS100KG HSC119 HSD119 HSB123 HSB124S HSB2836 HSB2838 1SS81 1SS82 1SS83 HSS81 HSS82 HSS83 HSK83 HSM83 HSM122 HSU83 RKS101KG HSB83 HSB83YP
Page 190 192 194 196 198 200 202 204 206 208 210 210 210 212 214 216 218 220 222
URP CMPAK CMPAK-4
Note:
(K) indicates high-reliability products.
Lineup
Schottky Barrier Diodes for Detector and Mixer

Ratings VR IO [VRRM] [IF] (V) (mA) [25] [50] [25] [50] [5] 30 3 30 30 30 2 5 10 15 10 15 10 15 [25] [50] [5] 30 10 15 [25] [50] 3 30 [5] 30 30 30 2 5 10 15 30 50 [25] [50] [5] 30 30 30 10 15 30 50 [25] [50] 3 30 30 30 2 5 30 50 [30] [50] [30] [50] 10 30 [25] [50] [5] 30 [5] 30 3 30 3 30 10 15 10 15 10 15 10 15 [25] [50] [25] 50 3 30 [5] 30 2 5 10 15 [30] [50] [30] [50] 2 5 3 30 Characteristics IF (mA) min. 35 35 35 35 35 35 35 4.5 35 35 35 35 35 35 35 VF (V) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 VF (V) max. 0.33 0.33 0.3 0.15 0.42 0.42 0.42 0.33 0.42 0.33 0.3 0.15 0.42 0.43 0.33 0.3 0.42 0.43 0.33 0.30 0.15 0.43 0.35 0.35 1.1 0.33 0.42 0.42 0.42 0.42 0.33 0.35 0.15 0.42 0.35 0.35 0.15 IF (mA) 1 1 1 0.1 1 1 1 1 1 1 1 0.1 1 10 1 1 1 10 1 1 0.1 10 1 20 5 1 1 1 1 1 1 1 0.1 1 1 20 0.1 C (pF) max. 2.8 2.8 0.9 0.9 1.5 0.3typ 0.8 0.8 0.8 2.8 0.85 0.8 2.8 0.85 0.85 1.5 0.3typ 0.8 2.8 2.8 0.85 1.5 0.8 2.8 2.80 0.85 1.50 0.3typ 2.8 2.50 5 1.5 2.8 0.9 0.9 0.9 0.9 0.85 0.85 0.85 0.85 2.80 3.0 0.85 0.85 0.3typ 0.8 2.50 5 0.3typ 1.0 VR (V) 1 1 0.5 0.5 1 0.5 0 0 0 1 0.5 0 1 0.5 0.5 1 0.5 0 1 1 0.5 1 0 1 1 0.5 1 0.5 1 1 1 1 1 0.5 0.5 0.5 0.5 0 0 0 0 1 1 0.5 0.5 0.5 0 1 1 0.5 0.5 f (MHz) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
Application Detector and mixer
Package CMPAK
CMPAK-4
UFP
SFP
EFP
MPAK
URP
MP6
Part No. HSB226S HSB226WK HSB276AS HSB276S HSB278S HSB285S HSB88AS HSB88WA HSB88WK HSB226YP HSB276AYP HSB88YP HSC226 HSC276 HSC276A HSC278 HSC285 HSC88 RKD700KJ HSD226 HSD276A HSD278 HSD88 RKD700KK HSL226 HSL276A HSL278 HSL285 RKD700KL RKD702KL RKD703KL HSM198S HSM226S HSM276AS HSM276ASR HSM276S HSM276SR HSM88AS HSM88ASR HSM88WA HSM88WK HSU226 HSU227 HSU276 HSU276A HSU285 HSU88 RKD702KP RKD703KP RKD750KP RKD751KP
Page 225 225 227 229 231 231 231 231 233 235 237 239 241 243 245 233 237 239 243 245 233 241 245 247 249 253 253 255 255 257 257 257 257 233 235 237 241 243 247 249 241 251
Lineup
Schottky Barrier Diodes for High Speed Switching

Ratings Elements S: Single D: Double S D S D D S S S S S S S S S S D D S S S S S S S S S S S S S S S S S S S VRRM (V) 30 30 20 20 40 30 30 15 30 30 30 30 30 30 30 20 20 30 30 20 20 30 20 30 30 30 30 20 30 30 30 30 50 50 30 40 IO [IF] (A) 0.1 0.1 [0.5] 0.2 [0.1] 0.1 0.1 0.2 0.2 0.2 [300] [300] 0.1 0.2 0.1 0.2 0.2 0.2 0.2 0.3 0.5 0.5 [0.7] [0.7] 0.1 0.1 0.2 0.3 1 1 0.5 0.5 0.5 0.5 0.7 1 VF (V) max. 0.44 0.44 0.40 0.40 0.58 0.44 0.60 0.39 0.52 0.45 0.42 0.5 0.60 0.45 0.60 0.40 0.42 0.50 0.50 0.40 0.40 0.55 0.43 0.50 0.44 0.60 0.50 0.40 0.36 0.45 0.37 0.44 0.46 0.60 0.55 0.55 Characteristics IF (A) 0.1 0.1 0.5 0.1 0.1 0.1 0.1 0.2 0.2 0.2 0.3 0.3 0.1 0.2 0.1 0.1 0.1 0.2 0.2 0.3 0.5 0.5 0.7 0.7 0.1 0.1 0.2 0.3 0.7 0.7 0.5 0.5 0.5 0.5 0.7 0.7 IR (A) max. 50 50 200 50 50 50 0.1 50 10 30 200 50 0.1 30 0.1 50 10 50 50 100 200 50 200 100 50 0.1 50 100 1000 100 500 100 400 40 50 50 VR (V) 30 30 20 20 40 30 5 6 30 10 30 30 5 10 5 20 20 30 30 20 20 30 20 30 30 5 30 20 30 30 30 30 20 30 30 40
Application High speed switching
Package CMPAK
V V
CMPAK-4 UFP
V
SFP EFP MPAK
V V
V V
URP
TURP
Part No. HRB0103A HRB0103B HRB0502A RKR0202AQE HSB0104YP HRC0103A HRC0103C HRC0201A HRC0203B HRC0203C RKR0303AKJ RKR0303BKJ HRD0103C HRD0203C HRL0103C HRW0202A HRW0202B HRW0203A HRW0203B HRW0302A HRW0502A HRW0503A HRW0702A HRW0703A HRU0103A HRU0103C HRU0203A HRU0302A HRV103A HRV103B RKR0503AKH RKR0503BKH RKR0505AKH RKR0505BKH RKR0703BKH RKR104BKH
Page 259 262 265 268 271 273 276 279 282 285 288 291 294 297 300 303 306 309 312 315 318 321 324 327 330 294 333 336 339 342 345 348 351 354 357 360
Note:
Low-forward-voltage products
Diodes for System Protection

Ratings VR [VRRM] (V) 8 [20] IO (mA) 50 200 IFSM (A) 0.5 2 Characteristics VF (V) IF max. (mA) 0.3 10 0.35 10 IR (A) max. 30 2 VR (V) 5 5
Application System protection
Package MPAK
Part No. HSM107S HSM126S
Page 363 365
10
Lineup
Zener Diodes for Surge Absorption

Application Surge absorption Package MP6 Part No. RKZ6.2B2KP RKZ6.8B2KP RKZ8.2B2KP HZL6.2Z4 HZL6.8Z4 HZD6.2Z4 HZD6.8Z4 HZC Series HZU5.6Z HZU6.2Z HZU6.8Z HZU-G Series HZM3.3WA HZM6.2ZMWA HZM6.2Z4MWA HZM6.8ZMWA HZM6.8Z4MWA HZM6.8MWA HZM27WA HZM5.6ZFA HZM6.2ZMFA HZM6.2Z4MFA HZM6.8MFA HZM6.8ZMFA HZM6.8Z4MFA HZM27FA HZB6.8MWA RKZ6.2Z4MFAKT RKZ6.8ZMFAKT RKZ6.8Z4MFAKT RKZ6.8TKK RKZ6.8TKJ RKZ27TKG RKZ27TWAQE Ratings Pd (mW) 100 100 100 100 100 150 150 150 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 150 150 150 150 150 200 200 VZ (V) 5.86 to 6.53 6.47 to 7.14 7.76 to 8.64 5.9 to 6.5 6.47 to 7.0 5.90 to 6.50 6.47 to 7.00 1.90 to 38.00 5.31 to 5.92 5.9 to 6.5 6.47 to 7.0 4.84 to 13.96 3.10 to 3.50 5.9 to 6.5 5.9 to 6.5 6.47 to 7.0 6.47 to 7.0 6.47 to 7.0 25.1 to 28.9 5.31 to 5.92 5.9 to 6.5 5.9 to 6.5 6.47 to 7.0 6.47 to 7.0 6.47 to 7.0 25.1 to 28.9 6.47 to 7.0 5.90 to 6.50 6.47 to 7.0 6.47 to 7.0 5.80 to 7.80 5.80 to 7.80 26.2 to 31.5 26.2 to 31.5 Characteristics C (pF) max. IZ (mA) 5 5 5 5 4.0 5 4.0 5 4.0 5 4.0 2 to 5 5 8.5 5 8.5 5 25 5 5 5 8.5 5 (4) 5 25 5 (4) 5 130 2 (27) 5 8.5 5 8.5 5 (4) 5 130 5 25 5 (4) 2 (27) 5 130 5 (4.0)/ 4.5 5 25 5 (4.0)/ 4.5 5 5 1 30 1 30 VR (V) 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 ESD (kV) min. 30 30 30 8 8 8 8 20 to 30 8 20 30 30 13 8 20 8 30 30 8 13 8 30 25 8 30 30 8 25 8 25 25 30 30 Page 367 367 367 369 371 373 375 377 380 383 386 388 391 393 395 398 401 403 405 408 410 412 414 417 419 419 421 423
EFP SFP UFP URP
* * * * * *
MPAK * * *
MPAK-5
* * *
* CMPAK VSON-5
Bidirectional Surge absorption
SFP UFP URP CMPAK
Note:
*:
Low capacitance version
Zener Diodes for Stabilized Power Supply

Ratings Application General Package DO-35 MHD LLD MPAK URP UFP SFP EFP DO-35 MHD LLD URP Part No. HZ Series HZS Series HZS-N Series HZK Series HZM-N Series HZU Series RKZ-KG Series RKZ-KJ Series RKZ-KK Series RKZ-KL Series HZ-L Series HZ-LL Series HZS-L Series HZS-LL Series HZK-L Series HZK-LL Series HZU-L Series HZU-LL Series Pd (mW) 500 400 400 500 200 200 200 150 150 100 400 250 400 250 400 250 150 150 Characteristics VZ (V) 1.6 to 38.0 1.6 to 38.0 1.88 to 38.52 1.9 to 38.0 1.9 to 38.0 1.9 to 38.0 1.9 to 38.0 1.9 to 38.0 1.9 to 38.0 1.9 to 38.0 5.2 to 38.0 1.6 to 5.3 5.2 to 38.0 1.6 to 5.3 5.2 to 38.0 1.6 to 5.3 5.2 to 14.3 1.6 to 5.3 IZ (mA) 5 to 2 5 to 2 5 5 to 2 5 to 2 5 to 2 5 to 2 5 to 2 5 to 2 5 to 2 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Page 425 430 435 439 444 449 454 458 462 466 468 472 475 479 482 486
Low noise
11

Package Name LLD JEITA Package Code RENESAS Code GLZZ0002ZA-A Previous Code LLD / LLDV MASS[Typ.] 0.027g
HE
D
L
Reference Symbol
Dimension in Millimeters
D HE L
Min 1.25 3.30 -
Nom 1.35 3.50 0.35
Max 1.45 3.60 -
Package Name MHD
JEITA Package Code
RENESAS Code GRZZ0002ZC-A
Previous Code MHD / MHDV
MASS[Typ.] 0.084g
Reference Symbol
b D E L
Min 26.0
Nom 0.4 2.0 -
Max 2.4 -
12

Package Name DO-35 JEITA Package Code SC-40 RENESAS Code GRZZ0002ZB-A Previous Code DO-35 / DO-35V MASS[Typ.] 0.13g
Reference Symbol
b D E L
Min 26.0
Nom 0.5 2.0 -
Max 4.2 -
Package Name EFP
JEITA Package Code
RENESAS Code PXSF0002ZA-A
Previous Code EFP / EFPV
MASS[Typ.] 0.0007g
D b
HE
e1
Reference Symbol
Pattern of terminal position areas
A b c D E HE b e1
Min 0.44 0.25 0.08 0.55 0.75 0.95
Nom 0.47 0.30 0.13 0.60 0.80 1.00 0.40 1.00
Max 0.50 0.35 0.18 0.65 0.85 1.05
13

Package Name SFP JEITA Package Code RENESAS Code PUSF0002ZB-A Previous Code SFP / SFPV MASS[Typ.] 0.0010g
D b
HE
e1
Reference Symbol
A b c D E HE b e1
Min 0.50 0.25 0.08 0.55 0.90 1.30
Nom 0.30 0.13 0.60 1.00 1.40 0.50 1.40
Max 0.55 0.35 0.18 0.65 1.10 1.50
Package Name UFP
JEITA Package Code SC-79
RENESAS Code PWSF0002ZA-A
Previous Code UFP / UFPV
MASS[Typ.] 0.0016g
D b
HE
l1 e1 A l1 b2
Reference Symbol Dimension in Millimeters
A b c D E HE b2 e1 l1
Min 0.50 0.25 0.08 0.70 1.10 1.50
Nom 0.60 0.30 0.13 0.80 1.20 1.60 0.80 1.70 0.60
Max 0.70 0.35 0.18 0.90 1.30 1.70
14

Package Name URP JEITA Package Code SC-76A RENESAS Code PTSP0002ZA-A Previous Code URP / URPV MASS[Typ.] 0.004g
D b
E HE
l1 e1 A2 A1 l1 b2
A1 A2 b D E HE b2 e1 l1
Min 0 0.75 0.15 1.10 1.55 2.35 -
Nom 0.90 0.30 1.25 1.70 2.50 0.80 2.30 0.80
Max 0.1 1.05 0.45 1.40 1.85 2.65 -
Package Name TURP
JEITA Package Code
RENESAS Code PUSF0002ZC-A
Previous Code TURP/TURPV
MASS[Typ.] 0.004g
D b
b
Lp1
HE
Lp2
c b1 b2
b1
Min 0.55 0.75 0.08 1.15 1.80 2.40 0.40 1.30
Nom 0.60 0.80 0.13 1.25 1.90 2.50 0.50 1.40 0.8 1.1 0.5 0.8 2.0
l1 A
e1
l2
b3
A b b1 c D E HE Lp1 Lp2 b2 b3 e1 l1 l2
Max 0.55 0.65 0.85 0.18 1.45 2.00 2.60 0.60 1.50
15

Package Name CMPAK JEITA Package Code SC-70 RENESAS Code PTSP0003ZB-A Previous Code CMPAK / CMPAKV MASS[Typ.] 0.006g
D e Q c
HE
L A A b e A2 A
A1 e1
b
l1
c A A Section
b2 Pattern of terminal position areas
A A1 A2 b c D E e HE L b2 e1 l1 Q
Min 0.8 0 0.8 0.25 0.1 1.8 1.15 1.8 -
Nom 0.9 0.3 0.16 2.0 1.25 0.65 2.1 0.425 1.5 0.2
Max 1.1 0.1 1.0 0.4 0.26 2.2 1.35 2.4 0.45 0.9 -
Package Name CMPAK-4
JEITA Package Code SC-82
RENESAS Code PTSP0004ZB-A
Previous Code CMPAK-4(D) / CMPAK-4(D)V
MASS[Typ.] 0.006g
D e Q c
HE
L A A b e A e
A1 e1 b
l1 b2
c A A Section
A A1 b c D E e HE L b2 e1 l1 Q
Min 0.8 0 0.25 0.1 1.8 1.15 1.9 -
Nom 0.9 0.3 0.16 2.0 1.25 0.65 2.1 0.425 1.5 0.2
Max 1.0 0.1 0.35 0.26 2.2 1.35 2.3 0.45 0.9 -
16

Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZC-A Previous Code MPAK(D) / MPAK(D)V MASS[Typ.] 0.011g
D e
E HE L
A b e
A e1 A1 b l1 c A A Section b2 Pattern of terminal position areas
A A1 b c D E e HE L b2 e1 l1 Q
Min 1.0 0 0.35 0.1 2.7 1.35 2.2 -
Nom 0.4 0.16 1.5 0.95 2.8 0.65 1.95 0.3
Max 1.3 0.1 0.5 0.26 3.1 1.65 3.0 0.55 1.05 -
Package Name MPAK-5
JEITA Package Code SC-74A
RENESAS Code PLSP0005ZC-A
Previous Code MPAK-5 / MPAK-5V
MASS[Typ.] 0.013g
D e c
E HE
L A A b
L1
Reference Symbol
A2
A1 b l1 c A A Section b2
e1
A A1 A2 b c D E e HE L L1 b2 e1 l1
Min 1.0 0 1.0 0.3 0.11 2.7 1.5 2.5 0.15 -
Nom 1.1 0.4 0.16 2.9 1.6 0.95 2.8 0.6 2.15 -
Max 1.4 0.1 1.3 0.5 0.26 3.1 1.8 3.0 0.55 0.85
17

Package Name MOP JEITA Package Code RENESAS Code PTSP0008DB-A Previous Code MOP / MOPV MASS[Typ.] 0.020g
D e
E HE L (0.45) b
A2 A
b2 l1
Reference Symbol
A1
e1 l1
A A1 A2 b D E e HE L b2 e1 l1
Min 1.0 0 2.2 -
Nom 1.1 0.4 4.71 1.5 1.27 2.8 0.65 0.8 2.6 1.0
Max 1.3 0.1 3.0 -
Package Name MFP12
JEITA Package Code

D
RENESAS Code PUSF0012ZA-A
Previous Code MFP12V
MASS[Typ.] 0.004g
Lp
HE
e b
e A2 A1 e1
Reference Symbol
l1
b2
A1 A2 b c D E e HE L Lp b2 e1 l1
Min 0 0.44 0.13 0.10 2.60 1.10 1.30 0.05 0.18 -
Nom 0.47 0.18 0.13 2.70 1.20 0.43 1.40 0.10 0.23 0.28 1.1 0.25
Max 0.05 0.50 0.23 0.16 2.80 1.30 1.50 0.15 0.28 -
18

Package Name MP6 JEITA Package Code RENESAS Code PXSN0002ZB-A Previous Code MP6V MASS[Typ.] 0.00015g
D b
L E L
l1 A l1 e1
Reference Symbol
b1
A b D E L b1 e1
Min 0.27 0.25 0.29 0.59 0.17
l1
Nom 0.30 0.27 0.32 0.62 0.19 0.31 0.38 0.23
Max 0.33 0.29 0.35 0.65 0.21
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.] 0.0008 g MP6-8 MP6-8V PXSN0008ZA-A D e b
e1
e2
b1 Reference Dimension in Millimeters Min Nom Max Symbol
A b D E e e1 L b1 e2 e3 l1
0.27 0.25 1.60 0.64 0.17
0.30 0.27 1.63 0.67 0.42 0.38 0.19 0.27 0.42 0.38 0.19
0.33 0.29 1.66 0.70 0.21
e3
l1
19

Package Name VSON-5 JEITA Package Code RENESAS Code PUSN0005KB-A Previous Code VSON-5V MASS[Typ.] 0.002g
D c
HE
L b2
e b l1
Reference Symbol
e1 A
A b c D E e HE L b2 e1 l1
Min 0.50 0.15 0.07 1.55 1.1 1.55
Nom 0.55 0.2 0.12 1.6 1.2 0.5 1.6 0.2 0.3 1.35 0.45
Max 0.60 0.3 0.22 1.65 1.3 1.65
20

1. 1.1 Diode Nomenclature Basic Principles of Setting the Type Number
(1) Naming of silicon diodes is based on JEITA (EIAJ-ED-4001). Such devices are registered with the Japan Electronics and Information Technology Industries Association (JEITA) and named by the JEITA. (2) Basic configuration
Example: 1SS270ATD-E-Q
Overseas sales product Lead-free specification Packing specification (2-3 letters) Grade (1-2 letters) Same product type or characteristics division with A, B, A1, B1, C1 etc., affixed. Reliability (H) means "Special manufactured for the communications industry". (K) means "Special manufactured for the industry". This item is omitted with other general products. Characteristic number (serial number) Affixed in order of registration (11 or more digits) Product See 1.2 (2) Silicon device indicated by letter "S"
1.2
Exceptions to Diode Type Number Nomenclature (Originally Devised by former Hitachi Diode)
When inconsistencies occur in the general principles for setting the type number as described in 1.1, use the following configuration originally devised by former Hitachi diode. (1) Basic configuration
Example: HSM88WATL-E-Q
Overseas sales product Lead-free specification Packing specification Grade Reliability See 1.1 (2) Pin connection See 1.2 (4) Serial number Serial numbers are from 1 to 4 digits in length. Package See 1.2 (3) Application See 1.2 (2) Series name
21
Nomenclature of Renesas Diodes (2) System of letters to indicate application Insert one of the letters shown in the table below to indicate application (product classification). Letter Indicating Application Letter Indicating Application Application (product classification) Application (product classification) S Signal diode R High speed switching diode V Z Zener diode Variable capacitance diode, PIN diode (3) System of letters to indicate outline One of the letters in the table below is used to indicate the outline (package) of the device. Letter Indicating Letter Indicating Outline Outline (package) Outline Outline (package) B CMPAK, CMPAK-4 L EFP C UFP, a part of CMPAK M MPAK, MPAK-5 D SFP S MHD G DO-35 U URP K LLD W MPAK for high speed switching Note: 1. The letter G (DO-35) may be omitted except when it is particularly necessary to differentiate from other packages (e.g., HZ6A1)
(4) System of indication to pin connection When several Diodes are molded in 1 package, indicate inside connection as follows according to the connection state in principle. Pin Connection Pin Connection Pin Connection Type Circuit Pin Connection Type Circuit Cathode common WK Series S
Series reverse
SR
4 devices Anode common
FA
Anode common
WA
4 pins Parallel
YP
Bidirectional Zener Diode
22
2. 2.1
Nomenclature for High Speed Switching Diodes System for Indicating Current
Current is taken as the maximum rating of average rectified current (IO) or forward current (IF). This specification covers rectifiers with an IO or IF value of 100 mA. As a rule, the indicator for current value in the type number is two columns as shown in the example below. However, with devices of more than 1 A or more (e.g., a product with an IO or IF of 1.2 which is not an integer) the number after the decimal point is discarded, and products with an IO or IF measured in 10 mA units have the 10 mA units dropped. Example: Average forward current IO (or IF) 1A 20 A 0.1 A 1.2 A Current indicator 1 20 01 1
2.2
System for Indicating Dielectric Resistance Division
Dielectric resistance is taken as the maximum rating of VRRM (Note). As a rule, two letters are used for products with a VRRM in 10 s and 100 s. Where the VRRM is up to the 1 unit (e.g., 35 V) the ones unit is dropped. Example: Dielectric Dielectric resistance indicator resistance VRRM 10 V 01 20 V 02 35 V 03 100 V 10 800 V 80 Note: May also be indicated as VRM or VR (peak).
2.3
Letters Indicating Product Division
With the above systems of classification (2.1 and 2.2) alone, products with different external forms etc., cannot be differentiated from others with the same current and voltage ratings. So another classifier is added after the voltage division containing letters in sequence (I and O are not used). (1) Basic configuration
Example: HRW0503ATR
Packing specification Product division See 2.3 Voltage division See 2.2 Average rectified current See 2.1 Package See 1.2 (3) Application R: High speed switching diode Series name
23
3.
Renesas Type Number Nomenclature
(1) Basic configuration

Example: RKV500KJR1Q
Overseas sales product Lead-free code Inside code Packing specification (Refer to 2.2 (4) of "Standard Taping Specifications" (REJ27G0009)) Package code See 3.(4) Quality level (omissible) Serial number (A pin arrangement symbol etc. is included.) It determines with each family and a consecutive number is defined in order of registration. See 3.(3) Product family See 3.(2) Product division K: Diode RENESAS
(2) The symbol showing a product family. Symbol Family V VC (Tuner, VCO) P PIN (Attenuator, Antenna switch) S SW (Switching, high frequency Switching) D SS_SB R PR_SB (It is based on Rectifier current value and Voltage withstanding value.) Z ZN (It is based on VZ value.) (3) Unique number Number (serial) 100 to 149 150 to 199 200 to 299 300 to 399
Family Switching high frequency Switching PIN (Antenna switch) PIN (Attenuator)
Number (serial) 400 to 499 500 to 599 600 to 699 700 to 799
Family Multi pin package products Variable capacitance (Tuner) Variable capacitance (VCO) Small signal schottky
(4) System of letters to indicate outline Letter Indicating Outline Outline (package) KA DO-35 KC MHD KD LLD KG URP KH TURP KJ UFP
Letter Indicating Outline KK KL KP KT KS KE
Outline (package) SFP EFP MP6 VSON-5 MFP12 MAP series
Letter Indicating Outline QA QC QE QF WA to WF WT to WR
Outline (package) MPAK MPAK5 CMPAK CMPAK4

Wafer shipment 1 to 6 Chip shipment 1 to 6
24
Renesas Diode Symbols and Their Definitions

Renesas uses many symbols drawn from the maximum ratings and electrical characteristics tables for the convenience of users and circuit designers who need to know the performance of particular kinds of product. The specific meanings of these symbols are given in more specialist technical literature, but for convenience of readers of diode data sheet, the meanings have been simplified.
1.
General Principles Relating to the Symbols
Capital letters used for the symbol and suffix indicate DC characteristics. AC and small signal characteristics are denoted by lower case letters. Note that although permissible power (Pd) is not a DC characteristic, it does contain a capital letter in part. The use of suffixes is described below. There are some exceptions and conventional usages which depart from the principles. Table 1 Example of a Symbol Display First Item opr th d
F R
Symbol T R P I V
Definition The first item provides a supplementary explanation of the symbol.
The first item indicates the direction of transmission.
The first item is classified in the following two ways. a. To provide a supplementary explanation of the contents indicated by the symbol. (In this case, the first item sometimes has three letters or more). b. To indicate the direction of transmission. F: Forward transmission R: Reverse transmission
2.
Symbols for Maximum Ratings
With semiconductor products, the maximum ratings are usually defined in terms of the absolute maximum ratings. The strictest care must be taken to assure that the values given in the maximum ratings table for each type are never exceeded, even for an instant. Even momentary excess of these maximum ratings can lead to immediate deterioration or destruction of the device concerned. Even if the device operates for a while after the excess, it must be assumed that the operation life has been shortened considerably. In designing electronic circuits with semiconductor devices, the first step to circuit design is to make sure that their maximum ratings are never exceeded, no matter what electrical fluctuations due to external conditions may occur. For example, even though the current and voltage applied to a particular diode may be within the maximum ratings, the power consumption is given by the product of current and voltage and must be within the range of permissible dissipation for the particular type. Furthermore, this permissible dissipation will decrease as the service temperature is rises, and the service range will be reduced accordingly. The following table gives brief definitions of the various items of maximum ratings prescribed for the different devices covered by diode data sheet.
25
Renesas Diode Symbols and Their Definitions Table 2 Diode Maximum Ratings Symbol VRRM VRSM VRM [VR(peak)] VR IFRM IFSM [IF(peak)] IFM [IF(peak)] IF IO Rth Rth(j-a), [Rth(j-c)] Definition Maximum allowable instantaneous value of reverse voltage repeatedly applicable. Maximum allowable instantaneous value of reverse surge voltage without repetition. Maximum allowable instantaneous value of reverse voltage that can be applied. Maximum allowable value of reverse voltage. Maximum allowable instantaneous value of forward current repeatedly applicable. Maximum allowable surge value of forward current without repetition. Maximum allowable instantaneous value of forward current. Maximum allowable value of forward current. Maximum allowable continuous average current in the forward direction under specified conditions. Under thermally steady state while the device is energized, the value of the temperature difference between the junction and ambient air or between the junction and case per unit power dissipation at the junction. Maximum value of power dissipation repeatedly consumable in diode under specified conditions. Temperature at the junction which is determined as the basis of the rating and indicated by the allowable range of temperature in device operation. Range of allowable temperature for storage of the device. Limit value of the ambient temperature at which operation is possible under the prescribed heating conditions. Upper limit value of lead temperature.
Term Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Peak reverse voltage Reverse voltage Repetitive peak forward current Non-repetitive peak forward surge current Peak forward current Forward current Average rectified current Thermal resistance
Power dissipation Junction temperature
Pd Tj
Storage temperature Operating ambient temperature Lead temperature
Tstg Topr Tl
26
3.
Symbol of Electrical Characteristics

Electrical Characteristics of Switching Diodes Symbol VR VF IR IF C rf VF /Ta trr Definition Voltage value when the specified reverse current (IR) is flowing. Voltage value when the specified forward current (IF) is flowing. Current value when the specified reverse voltage (VR) is applied. Current value when the specified forward voltage (VF) is applied. Terminal capacitance when the specified reverse voltage (VR) and frequency (f) are applied. Under specified conditions, the ratio of DC output power voltage (revealed in load after rectification) to AC input power voltage. Resistance value when specified forward current and frequency are applied. Ratio of forward voltage change to ambient temperature change. Time taken for the reverse current (IR) to reach the specified level (Irr) when the reverse voltage (VR) is applied while the device is conducting in the forward direction. When without a rule of (Irr), assumed with 0.1 IR.
Table 3
Term Reverse voltage Forward voltage Reverse current Forward current Capacitance Rectifier efficiency Forward resistance Forward temperature coefficient Reverse recovery time
Table 4
Electrical Characteristics of Switching Diodes Symbol VZ IZ ZZ, rd, ZZT, ZZk Z Definition Voltage value when the specified reverse current (IZ) is flowing. Standard current for measuring Zener voltage. Ratio of small change in Zener voltage to small change in Zener current. Ratio of Zener voltage change to ambient temperature change.
Term Zener voltage Zener current Dynamic resistance Temperature coefficient Table 5
Electrical Characteristics of Variable Capacitance Diodes Symbol C/C Definition Percentage of capacitance variation among group of devices under specified conditions. C/C = (Cmax Cmin) Cmin 100% Ratio of capacitance with specified differences in voltage. Series resistance value when specified reverse voltage and frequency are applied. High frequency characteristics performance indicated by series resistance capacitance value when specified reverse voltage and frequency are applied. Q = 1/(2frSC)
Term Matching error
Capacitance ratio Series resistance Performance index
n rs Q
27
4.
Indicator of Units and Mathematical Power
Units for maximum ratings and characteristics are as follows. a. Unit indicators method *1 Types of Quantity Symbol Unit Abbreviations Reading Current I, i A ampere Voltage V, v V volt Power P W watt Resistance R, r ohm Static capacitance C F farad Inductance L H henry Admittance y S siemens Conductance g S siemens Susceptance b S siemens Gain, attenuation dB decibel Time t s second Frequency f Hz hertz Angle degrees () Temperature T C degrees Length (l) m meter Efficiency % percent Note: 1. All of the units shown here are to be applied to the power product of 100. When indicating the power product in connection with time t (s) or frequency f (Hz), the following indicators should be used: t (s), f (kHz), etc. b. Unit indicators method *1 Power Abbreviation Prefix 109 G giga 6 10 M mega 103 k kilo 0 10 103 m milli 106 micro 9 10 n nano 1012 p pico 1015 f femto Note: 1. Currently, the powers 109 to 1015 are used for semiconductor devices. However, it does not follow that all of the powers are used for different quantities; 103 (m) and 109 (n) are not customarily used for static capacitance.
28
Reliability of Renesas Diodes

1. 1.1 Diode Reliability About the Construction
Diodes are classified according to whether they are sealed in glass or plastic, and different considerations are required for each as regards reliability design. With the glass-sealed type (hermetic seal), the assurance of heat and mechanical strength is important, taking into account air-tightness and thermal expansion coefficient matching between components (pellet and lead wire studs and glass case in the case of DHD). Table 1 shows representative devices classified by external shape. the package. Check the classification of each with reference to
The important criteria with the plastic-sealed type are the plastic material, pellet surface stabilizing technique (passivation specification), and the structural design of the package.
1.1.1
Features of the glass-sealed type
(1) Superior air-tightness (moisture resistance), and high reliability. (2) Compact and lightweight for easy mounting. (3) Double heat sink construction for favorable heat radiation. (4) Possible to streamline set assembly due to ease of taping and lead forming.
1.1.2
Features of the plastic-sealed type
The mini-mold (MPAK) diodes have the following features: (1) Ideal for hybrid IC use as they are ultra-compact and can be surface mounted. (2) Plural pellets can be sealed in one package. (3) Optimal for high density surface mounting in ultra-compact devices.
1.2
Reliability Data
Actual examples of diode reliability tests are given below. (1) Failure criteria standards An example of the failure criteria standards for a diode is given in table 2. (2) Diode reliability test data Operation life test results according to application are given in table 3, and environmental test results for each package are shown in table 4. (3) Diode characteristics changes Reliability testing is not solely a question of finding failures. Other factors such as change in characteristics over time and characteristic distribution contribute to quality and reliability evaluation of a product. This data is also the basis for margin allowance in circuit design and other procedures during user system design. Table 5 shows examples of changes over time of the Zener voltage and reverse current in an operation life test for a Zener diode. Table 6 gives changes over time of reverse current in a high temperature reverse bias test for a variable capacitance diode. (4) Percentage occurrence according to failure mode The percentage occurrence according to failure mode for glass-sealed diodes on the market is shown in figure 1, and for the plastic-sealed type in figure 2. Figures 1 and 2 reveal that more than 80% of failures are due to destruction. This evidence indicates that the failure rate could be reduced by considering how the devices are handled during use, and particularly through circuit designs that strictly adhere to the maximum ratings.
29
Reliability of Renesas Diodes Table 1 Product Types According to Package Package MHD DO-35 LLD MP6 MP6-8 EFP SFP UFP TURP URP MPAK-5 MPAK CMPAK-4 CMPAK VSON-5 MFP12 Representative Product Part No. 1SS270, HZS series 1S2076, 1SS106, HZ series HSK83, HZK series, HSK120 RKP200KP, RKV600KP, RKV652KP RKP450KE HVL142A, HVL355C, RKV650KL, RKD700KL, HSL226 HVD142A, HVD355B, RKP201KK, RKV500KK, RKD700KK HVC355B, RKV500KJ, RKD700KJ, HSC226 HRV103A, HRV103B HVU355B, HRU0302A, RKV500KG, HZU series HZM6.8MFA, HZM27FA HSM88AS, HVM14S, HVM16, HZM-N series, HRW0202A HSB0104YP HVB14S RKZ6.8Z4MFAKT RKP400KS, RKP401KS, RKP402KS
Type Glass-sealed type Plastic-sealed type
30
Reliability of Renesas Diodes
Hermetic leakage failure 4% Foreign matter fault 6%
NVF 4%
Others 1%
2007 Statistics
EOS or ESD 85%
Figure 1
Classification of Glass-Sealed Type Diodes on the Market According to Fault Mode
NVF 19%
2007 Statistics
EOS or ESD 81%
Figure 2
Classification of Plastic-Sealed Type Diodes on the Market According to Fault Mode
31
Reliability of Renesas Diodes Table 2 Example of Failure Criteria for Diodes Item Reverse voltage Reverse current Forward voltage Zener voltage change rate Disconnection, short Failure Criteria Standard *1 Lower Limit Upper Limit L 0.9 U2 U 1.1 2 +2 Includes high/low Disconnection, semi-disconnetion, temperature short, semi-short failure Major/minor leak Unit V A V % Remarks
Electrical characteristics
Appearance, others
Hermetic leakage
Applies to glass-sealed diodes
Appearance Corrosion/discoloration Solderability Marking Notes: 1. U: Initial standard maximum value L: Initial standard minimum value Table 3 Operation Life Test Results (1)
by limit sample by limit sample by limit sample by limit sample
No. 1
Test Item Continuous operation (1)
Continuous operation (2)
High temp. reverse bias
Test Conditions Associated standard: EIAJ-ED-4701 Ta=25 2C, Pd max. Testing time: 1000 h Associated standard: EIAJ-ED-4701 Ta=25 2C, IO max. Testing time: 1000 h Associated standard: EIAJ-ED-4701 VR max., Ti max. Testing time: 1000 h
Fast/High Voltage Switching Failure 2 rate* 1 Result* (1/h) 0/307 3.0106
RF Switching Failure 2 rate* 1 Result* (1/h) 0/60 1.5105
Zener Diode Failure rate*2 1 Result* (1/h) 0/920 1106
0/307
3.0106
0/60
1.5105
0/307 3.0106
0/60
1.5105
Notes: 1. No. of failure/No. of tests 2. Reliability standard 60%
32
Reliability of Renesas Diodes Table 3 Operation Life Test Results (2)

High Speed Switching Diode Failure rate*2 1 (1/h) Result* Variable Capacitance PIN Diode Failure rate*2 1 (1/h) Result* 0/60 1.5105
No. 1
Test Item Continuous operation (1)
Continuous operation (2)
High temp. reverse bias
Test Conditions Associated standard: EIAJ-ED-4701 Ta=25 2C, Pd max. Testing time: 1000 h Associated standard: EIAJ-ED-4701 Ta=25 2C, IO max. Testing time: 1000 h Associated standard: EIAJ-ED-4701 VR max., Ti max. Testing time: 1000 h
0/614
1.5106
0/307
3.0106
0/120
7.6106
Notes: 1. No. of failure/No. of tests 2. Reliability standard 60% Table 4 Environmental Test Results (1)
Package Glass Insertion Type Failure Result*1 rate*2 (1/h) 0/304 0/304 SMD (LLD) Failure Result*1 rate*2 (1/h) 0/304
No. 1
Test Item Solder heat resistance
Thermal shock
Temp. cycling
Drop test
Vibration
Shock test
Test Conditions Associated standard: EIAJ-ED-4701 Solder temperature: (see right) Solder wetting time: (see right) Rosin type flux wetting: 5 to 10 s Wetting 1 to 1.5 mm from the body of the test piece. 2 to 2.5 mm in the case of DO-41. Entire body is wetted in the case of SMD. Associated standard: EIAJ-ED-4701 Low temperature: 0C, 5 min High temperature: 100C, 5 min Normal temperature: under 10 s No. of cycles: (see right) Associated standard: EIAJ-ED-4701 Low temperature: Tstg min. 30 min High temperature: Tstg max. 30 min Normal temperature: 10 to 15 min No. of cycles: 10 Associated standard: EIAJ-ED-4701 Height: 75 cm Onto 3 cm thick maple board 3 times Associated standard: EIAJ-ED-4701 Variable frequency 2 Acceleration: 200 m/s Frequency: 100 to 2000 Hz XYZ directions, each 4 times Associated standard: EIAJ-ED-4701 Acceleration: 15000 m/s2 Pulse width: 0.5 ms XYZ directions, each 3 times
260C 10 s 350C 3s
[cycle] 10 50
0/152 0/152
0/152 0/152
0/2304
0/2304
0/2304
0/152
0/152
0/152
0/152
33
Reliability of Renesas Diodes Table 4 Environmental Test Results (1) (cont.)

Package Glass Insertion Type Failure Result*1 rate*2 (1/h) 0/304 SMD (LLD) Failure Result*1 rate*2 (1/h)
No. 7
Test Item Terminal strength
Solvent resistance Salt spray
10
Body strength
11
Air tightness
12
Pressure cooker
13
14
15
16
High temperature/ humidity storage High temperature/ humidity reverse bias High temperature storage Low temperature storage
Test Conditions Associated standard: EIAJ-ED-4701 (1) Tensile Load: JIS-C-5035 recommendation Hold time: 10 s Associated standard: EIAJ-ED-4701 (2) Bending Load: JIS-C-5035 recommendation 90 bend, 2 times Associated standard: EIAJ-ED-4131 (3) Board bending Board support gap: 90 mm Extent of board bending: 2 mm Associated standard: EIAJ-ED-4131 Isopropyl alcohol Immersion time: 30 s Associated standard: EIAJ-ED-4701 Ta = 35C, 5% saline atmosphere Test duration: 24 h Associated standard: EIAJ-ED-4131 (1) Bending resistance Applied pressure: 10 N Pressure duration: 10 1 s Associated standard: Renesas standard (2) Compression resistance Applied pressure: 5 N Pressure duration: 10 1 s Pressure applied along the diode body axis Associated standard: EIAJ-ED-4701 Pressurized water immersion test 5 Applied pressure: 5.07 10 Pa Test duration: 2 h Associated standard: EIAJ-ED-4701 Pressurized water immersion test 5 Applied pressure: 2.03 10 Pa Test duration: 40 h Associated standard: EIAJ-ED-4701 Ta = 65C, 95% RH Test duration: 1000 h Associated standard: EIAJ-ED-4701 Ta = 85C, 85% RH, VR max. Test duration: 1000 h Associated standard: EIAJ-ED-4701 Tstg max. Test duration: 1000 h Associated standard: EIAJ-ED-4701 Tstg min. Test duration: 1000 h
0/304
0/304
0/152
0/152
0/152
0/152
0/304
0/304
0/2304
0/2304
0/920
1106
0/920
1106
0/920
1106
0/920
1106
0/230
4106
0/230
4106
0/230
4106
0/230
4106
34
Reliability of Renesas Diodes Table 4 Environmental Test Results (2)

Package Glass Insertion Type Failure Result*1 rate*2 (1/h) 0/180 SMD (LLD) Failure Result*1 rate*2 (1/h) 0/88
No. 1
Test Item Solder heat resistance
Solderability
Thermal shock
Temp. cycling
Drop test
Vibration
Shock test
Terminal strength
Solvent resistance
Test Conditions Associated standard: EIAJ-ED-4701 Solder temperature: 260C Solder wetting time: 10 s Rosin type flux wetting: 5 to 10 s Entire body is wetted in the case of SMD. Associated standard: EIAJ-ED-4701 Solder temperature: 235 5C Solder wetting time: 5 0.5 s Rosin type flux wetting: 5 to 10 s Entire body is wetted in the case of SMD. Associated standard: EIAJ-ED-4701 Solder temperature: 230 5C Solder wetting time: 5 0.5 s Rosin type flux wetting: 5 to 10 s Entire body is wetted in the case of SMD. Pretreatment: Leave in pure stream for 60 min. Associated standard: EIAJ-ED-4701 [cycle] Low temperature: 0C, 5 min 10 High temperature: 100C, 5 min 50 Normal temperature: under 10 s No. of cycles: (see right) Associated standard: EIAJ-ED-4701 Low temperature: Tstg min. 30 min High temperature: Tstg max. 30 min Normal temperature: 10 to 15 min No. of cycles: 10 Associated standard: EIAJ-ED-4701 Height: 75 cm Onto 3cm thick maple board 3 times Associated standard: EIAJ-ED-4701 (1) Variable frequency 2 Acceleration: 200 m/s Frequency: 100 to 2000 Hz XYZ directions, each 4 times Associated standard: EIAJ-ED-4701 2 Acceleration: 15000 m/s Pulse width: 0.5 ms XYZ directions, each 3 times Associated standard: EIAJ-ED-4701 (1) Tensile Load: JIS-C-5035 recommendation Hold time: 10 s Associated standard: EIAJ-ED-4131 Isopropyl alcohol Immersion time: 30 s
0/180
0/88
0/180
0/88
0/180 0/180
0/88 0/88
0/3068
0/1155
0/3068
0/1844
0/60
0/60
0/60
0/60
0/180
0/88
0/60
0/60
Notes: 1. 2. 3. 4.
No. of failure/No. of tests Reliability standard 60% SMD1: MPAK, CMPAK SMD2: URP, UFP, SFP
35
Reliability of Renesas Diodes Table 4 Environmental Test Results (2) (cont.)

Package Glass Insertion Type Failure Result*1 rate*2 (1/h) 0/180 SMD (LLD) Failure Result*1 rate*2 (1/h) 0/88
No. 10
Test Item Salt spray
11
Pressure cooker
12
13
14
15
High temperature/ humidity storage High temperature/ humidity reverse bias High temperature storage Low temperature storage
Test Conditions Associated standard: EIAJ-ED-4701 Ta = 35C, 5% saline atmosphere Test duration: 24 h Associated standard: EIAJ-ED-4701 Pressurized water immersion test 5 Applied pressure: 2.03 10 Pa Test duration: 40 h Associated standard: EIAJ-ED-4701 Ta = 65C, 95% RH Test duration: 1000 h Associated standard: EIAJ-ED-4701 Ta = 85C, 85% RH, VR max. Test duration: 1000 h Associated standard: EIAJ-ED-4701 Tstg max. Test duration: 1000 h Associated standard: EIAJ-ED-4701 Tstg min. Test duration: 1000 h
0/180
1.28104
0/88
2.6104
0/1840
5107
0/920
1106
0/1840
5107
0/920
1106
0/735
1.25106
0/185
5106
0/735
1.25106
0/185
5106
Notes: 1. 2. 3. 4.
No. of failure/No. of tests Reliability standard 60% SMD1: MPAK, CMPAK SMD2: URP, UFP, SFP
36
Reliability of Renesas Diodes Table 5 Example of Change in Characteristics of a Zener Diode Changes in VZ and IR Due to Zener Diode Operation Life Test
1.0 0.5 Vz (%) 0 0.5 1.0 0 168 500 Time (h) 1000 Measuring condition : Normal temperature
Change in Characteristics Example Part No. HZ7 Test conditions Ta = 25C Pd = 500 mW No. of test pieces 200 pieces Criteria for failure VZ = initial value 2% IR = 2 A Failure mechanism Surface deterioration Explanation of results: (1) VZ and IR both shift stably (2) VZ and IR are both within the initial values, and nothing occurred to cause the failure criteria to be surpassed.
10 1.0 IR (A) 0.1 0.01 0.001 0 168
Measuring condition : Normal temperature VR = 3.5V
500 Time (h)
1000
Table 6
Example of Change in Characteristics of a Variable Capacitance Diode Changes in IR Due to High Temperature Reverse Bias Test of Variable Capacitance Diode
Measuring condition : Normal temperature 1.0 IR (nA) 0.1 0.01 VR = 32V
Change in Characteristics Example Part No. RKV500KJ Test conditions Ta = 85C, RH = 85% VR = 32 V (continuous) No. of test pieces 60 pieces Criteria for failure IR = 20 nA (VR = 32 V) Failure mechanism Surface deterioration Explanation of results: (1) Fluctuation in IR distribution is minimal, IR is within initial standard, and nothing occurred to cause the failure criteria to be surpassed.
168
500 Time (h)
1000
37
Reliability of Renesas Diodes (5) Failure rate and derating Judging from the results of each reliability test, it is necessary to derate devices for heat stress due to ambient temperature, power dissipation etc., in order to assure operational reliability. Table 7 shows diode derating characteristics. It is advisable to use within the maximum ratings when using the devices. Table 7 Diode Derating Characteristics Derating Application Example of High-Speed Switching Diode 225 200 175 150 125 100 75 50 25 Pd, Ta Disconnection, short, deterioration in characteristics 106 Front/back electrode Plastic-sealed diode and junction deterioration
Acceleration coefficient (multiplicaton facotr against 25C)
105
Tj (C)
Stress factor Failure criteria
Failure mechanism
Overview: The junction temperature was changes so as to accelerate the operation life test of the high-speed switching diode as much as possible. The acceleration coefficient was determined as in the graph on the right based on the relation between junction temperature and failure rate. Use of derating data When the failure rate at the prescribed Tj has been checked, the failure rate at arbitrary temperatures can be determined from the graph on the right. Example: When a glass-sealed type diode has a failure rate of 100 [FIT] occurring at Tj = 100C, determine the failure rate at Tj = 50C. From the graph on the right, the acceleration coefficients at 100C and 50C are 1800 and 18 to 25C respectively. The failure rate at 50C is 1/100 that of the rate at 100C. Therefore, at 50C, 100/100 = 1 [FIT] can be expected.
104 Glass-sealed diode 103
102
10
1 2.0 2.5 3.0 3.5 3 1 Junction temperature 1/Tj (10 K )
38
Renesas Diode Manufacturing Process and Quality Control

Renesas makes every possible effort to maintain the quality of its diodes from manufacturing to shipment, and pays strict attention to quality control in the production process. Meticulous care over each of the manufacturing process enables timely detection of faults, and helps maintain stable quality control. Figure 1 shows the manufacturing process, figure. 2 shows details of quality control for the glass-sealed type diode and figure 3, the plastic-sealed type diode. In addition to inspection of all diodes, Renesas also carries out sampling inspections in accordance with the JIS Z 9015 standard, to provide a regular reliability assurance system.
Process Quality Control Method
Materials, parts Materials, parts

Materials and parts inspection
Characteristics test of materials and parts for semiconductor devices Production equipment, environment,auxiliary materials, workers administration
Sampling lot judgment, Quality level affirmation Quality level affirmation
Manufacturing
Screening
Process Quality Control
Sampling lot judgment, Quality level affirmation Classification, inspection
100% inspection Products Product inspection
100% inspection of external and electrical characteristics
Sampling inspection of external and electrical characteristics
Sampling lot judgment
Reliability test
Reliability level affirmation
Warehouse Information feedback Quality information Customers Claims Field record Other general quality information
Shipping
Figure 1
Manufacturing Process and Quality Control Flowchart
39

Process Purchase of materials Wafer Diffusion Film thickness inspection Mask Photolithography Photolithography inspection Metallization PQC Appearance of wafer Film thickness Appearance of wafer Type No. Part confirmation Control Item Control Point
Film thickness, Resistivity
Assurance of basic film thickness Grasp of diffusion status Part confirmation Scratch and Position deviation Assurance of basic film thickness Monitor Scratch and Metallization
Scribing Chip visual inspection Pellet washing PQC Lead Glass
Appearance of chip Appearance of chip Type No.
Selection of good/bad chip Monitor Scratch and Crack Part confirmation
Assembly Sealing Soldering process PQC Screening *1) Total electrical inspection PQC *1) Marking Taping and Packing Appearance, Solder thickness Vibration IR Electrical characteristics Failure analysis Assurance of Taping Appearance of outline
Feedback of analysis information
Shipment inspection Warehouse
Electrical characteristics, Appearance
Shipping : Work process : PQC (Process Quality Control) : Inspection Notes: *1: Individual specification. *2: One in of the order varies in the manufacture main flow.
Figure 2
Glass-Sealed Type Diode Quality Control Flowchart
40

Process Purchase of materials Wafer Diffusion Film thickness inspection Mask Photolithography Photolithography inspection Metallization PQC Appearance of wafer Film thickness Appearance of wafer Type No. Part confirmation Control Item Control Point
Film thickness, Resistivity
Assurance of basic film thickness Grasp of diffusion status Part confirmation Scratch and Position deviation Assurance of basic film thickness Monitor Scratch and Metallization
Scribing Chip visual inspection PQC
Appearance of chip Appearance of chip
Selection of good/bad chip Monitor Scratch and Crack
Frame Die bonding Wire bonding PQC
Type No.
Part confirmation
Appearance, Bonding strength
Appearance of bonding
Resin Molding Solder process Marking Lead cut PQC
Type No.
Part confirmation
Appearance of lead
Appearance of outline
Total electrical inspection Taping and Packing
Electrical characteristics Cover tape peeling strength
Shipment inspection Warehouse Shipping : Work process : PQC (Process Quality Control) : Inspection
Electrical characteristics, Appearance
Notes: *1: One in of the order varies in the manufacture main flow.
Figure 3
Plastic-Sealed Type Diode Quality Control Flowchart
41
Precautions for Application

1. Selecting a Semiconductor Device
The reliability of semiconductor devices is not limited to Renesas products alone, but is dependent on other factors including electronic equipment firms, and a variety of application conditions including the circuit conditions selected by the user, mounting and environmental conditions. To assure the kind of usage that gives a high level of reliability, please consider the maximum ratings, deratings and selection of package when choosing a device.
1.1
Maximum Ratings
The maximum ratings of a semiconductor device are usually defined in terms of the absolute maximum ratings, and should not be exceeded under any circumstances, even for an instant. Even momentary excess of these maximum ratings can lead to immediate deterioration or destruction of the device concerned. Even if the device operates for a while after the excess, it must be assumed that the operation life has been shortened considerably. In designing electronic circuits with semiconductor devices, the first step to circuit design is to make sure that their maximum ratings are never exceeded, no matter what electrical fluctuations due to external conditions may occur. Not only the DC maximum ratings but in the case of pulse type applications as well, the area of safe operation (ASO), load locus and peak voltage current should also not be exceeded. (1) Diode maximum ratings A description of Renesas diode maximum ratings are given in the Renesas Diode Symbols and Their Definitions section of this data book. (2) Area of Safe Operation (ASO) As opposed to the absolute maximum ratings, the ASO ratings indicate the maximum ratings in the operating state. However, since the mutual interactions between the voltages, currents, ambient temperature, and other conditions result in different combinations of conditions that can be used, these issues require careful consideration. (3) Derating considerations The degree of derating that can be applied to particular maximum ratings is an important aspect of reliability design. Derating characteristics of semiconductor devices has been dealt with previously in this data book. At the system design stage, the derating values each vary slightly with the device type: these include electrical stress derating such as voltage, current, power and load, and mechanical stress derating such as vibration and shock. Table 1 shows examples of derating criteria that should be considered in reliability design. It is advisable to consider these derating criteria for assurance of reliability in the design of equipment. If setting within the derating criteria is problematic, another method, for example, selection of a device with greater maximum ratings, is advised.
42
Precautions for Application Table 1 Derating Design Criteria Example Diode (Tj 25C) 0.5 + 25C or less ex.) (Tj = 175C 100C or less) (Ta = 5 to 35C) Power dissipation, ambient temperature, heat radiation conditions Tj = Pd Rth(j-a) + Ta 45 to 75% RH When condensation forms due to normal temperature, sudden temperature change etc., semiconductors and PCBs should be coated with a waterproof. Maximum rating 0.8 or less (maximum rating 0.5 or less) Prevention measures against over-voltage including static electricity destruction IO 0.5 or less (IO 0.25 or less) (Precaution for Application) (Especially for highreliability applications) (Especially for highreliability applications)
Derating Factor Temperature Junction temperature Device ambient temperature Others Humidity Relative humidity Others
Voltage
Voltage withstanding Over-voltage Average current Peak current Average power ASO
(Especially for highreliability applications)
Current
(Especially for highreliability applications)
IFM [IF(peak)] 0.8 or less Pd 0.5 (especially for Zener diodes) Individual catalog maximum rating value of should not be exceeded. Surge IFSM [IF(surge)] or less Note: 1. In general, peak voltage (including surge), current power and junction temperature should be below the maximum ratings to guard against excess states, and deratings for reliability should be in accordance with the above average values. Please consult Renesas technical staff with regard to the ASO, as this varies with the circuit the device is used in. Power Pulse *1
2.
Precautions for Mounting
Certain precautions must be observed with regard to structural design or mounting work in semiconductor device assembly and mounting. The following is a description of the precautions it is advisable to observe during design and handling. The method of attachment and mounting should follow the precautions harm the reliability of semiconductor devices.
2.1
Forming and Cutting Leads
When mounting an insertion type diode in a printed circuit board, leads may have to be formed to cut. Mechanical destruction of a device may occur or the life of the device may be shortened if unnecessary stress is applied to leads during these processes. In the worst case, the glass body of the diode can crack, so the following precautions should be taken when forming or cutting leads. (1) When bending lead wires, hold them securely between the glass body and the point to be bent with a pair of pliers. Then bend them holding the open end of the lead so that no bending stress is applied to the glass body as illustrated in figure 1A. Never bend the leads while holding the glass body. The same precaution should be taken when the leads of multiple devices are processed simultaneously using lead forming machines (see figure 1B). (2) The bend in the lead wires should be made away from the end of the glass body (see figure 1C). Do not bend the lead wires more than 90. (3) Do not bend the leads repeatedly.
43
: Right A) Lead bending Even if the lead is pulled in the direction of W3, the gap t must be maintained between the diode body and the clamping mechanism to avoid contact. Clamp
: Wrong
Forming mechanism W2 W3
W1 Maintain a gap
B) Bending a lead wire using a die
: Right C) Bending point
: Wrong
Figure 1
Precautions for Lead Forming
Example Case Name Package destruction due to automated insertion Device Type Glass-sealed type diode Example Contents During automatic insertion of the diode in a PCB using a high-speed inserter, the glass package was destroyed by excessive pressing force on the diode body and/or excessive force from the lead clinch in the PCB.
Presser mechanism Glass package Lead wire PCB
Lead clinch mechanism Countermeasures 1) Adjust the position of the presser mechanism (die). Use a die material that buffers the shock on the diode glass. 2) Set the lead clinch force to the minimum.
Figure 2
Package Destruction Due to Automated Insertion
44
2.2
Attachment to a Printed Circuit Board
When attaching a semiconductor device to a printed circuit board, make sure the lead wires are not subjected to excessive stress. Take the following precautions: (1) The gap between attachment holes in the PCB should match the gap between lead wires to make sure that excessive stress is not applied either during insertion of the device or afterwards. (2) When attaching a device to a PCB, do not pull unnecessarily on the lead wires to avoid excessive stress build up between the lead wires and package. (3) Leave a suitable gap between the semiconductor device and the PCB. It is advisable to use spacers or similar means to achieve this. (4) After fixing to the PCB, do not carry out assembly operations that are likely to cause stress between lead wires and the device body. For example, after soldering lead wires to the PCB, if the device is attached to a heat sink, variance in lead wire length tolerance and dimensions of the PCB could cause concentration of excessive stress on the wires, resulting in detachment or fracture, or package destruction. In this case carry out soldering after the device has been fixed in place. (5) Pay attention to the precautions described in 2.1 when conducting automatic insertion or forming. (6) After attachment of the diode to the PCB, if the PCB is to be cut or partitioned, bending of the board can concentrate excessive stress on the lead wires and/or package, resulting in damage to the package or disconnection of leads. In this case a process is needed that does not induce warping of board.
2.3
2.3.1
Soldering
The Insertion Type
When soldering the glass-sealed type diode, whether you use a soldering iron or the flow solder method, soldering should be done as quickly as possible and at the glass. With the DO-41 type, soldering work should be done within 5 seconds at 250C and 10 seconds at 230C at a point 4-6 mm away from the end of the glass body. With the DHD type, soldering work should be done within 10 seconds at 260C and 3 seconds at 350C at a point 1-1.5 mm away from the end of the glass body. Take the following precautions in soldering diodes: (1) Do not let the soldering iron touch the glass body directly (see figure 3A). (2) The soldering point should be over 3mm away from the diode body (see figure 3B). (3) Use of strongly alkaline or acidic flux can cause corrosion of the lead wires. (4) When solder or the soldering iron might touch the glass package of the diode during the soldering process, be sure to preheat the diode up to about 100C. (5) Do not pull forcefully on the lead wires when inserting diodes into a printed circuit board (see figure 3C). (6) The recommended soldering iron is the type operated with a secondary voltage supply by transformer. (7) The soldering iron should also be grounded to prevent current leakage. (8) When using adhesives on circuit boards to fix diodes, the diode may break if the adhesive sets extremely hard.
A) : Wrong Don't touch the diode body B) : Right 3mm minimum from the diode body C) : Wrong
Soldering tip
A lead wire is pulled with pliers to insert
Figure 3
Precautions for Soldering
45
2.3.2
Table 2 MPAK-5
Surface Mounting Diode (SMD)

SMD Soldering Mounting Inset Conditions Package Footprint (land) Dimensions
0.95 0.95
The recommended conditions for soldering SMD diodes are shown in table 2.
Cream Solder Thickness 0.15 to 0.30mm
0.6
1.0
1.9
2.6
MPAK
0.95 0.95
0.15 to 0.30mm
0.8
1.0
2.6
CMPAK-4
0.8
1.3
0.15 to 0.30mm
1.9
CMPAK
0.65 0.65
0.15 to 0.30mm
1.9
0.6
0.8
VSON-5
0.5 0.5 0.3

0.45 1.35
0.15 to 0.30mm
1.0
MFP12
1.1
0.43
0.15 to 0.30mm
0.25
0.28
0.23
MP6
0.15 to 0.30mm
0.31
0.38
MP6-8
0.38
0.42
0.27
0.15 to 0.30mm
0.19
EFP
0.4 1.0
0.15 to 0.30mm
Notes: 1. Footprint (land) dimensions are measured in millimeters. 2. Cream solder thicknesses are the example values for reflow mounting. 3. The temperature profile is shown below.
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Precautions for Application Table 2 SFP UFP

0.6 1.1 0.6
SMD Soldering Mounting Inset Conditions (cont.) Package Footprint (land) Dimensions
0.5 1.4
Cream Solder Thickness 0.15 to 0.30mm 0.15 to 0.30mm 0.15 to 0.30mm 0.15 to 0.30mm
0.8
1.5
0.8
TURP
0.8
0.5
0.8
0.8 2.0
URP
0.8
1.1
1.2
2.2
1.2
Notes: 1. Footprint (land) dimensions are measured in millimeters. 2. Cream solder thicknesses are the example values for reflow mounting. 3. The temperature profile is shown below.
1.6
LLD
0.15 to 0.30mm
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Precautions for Application (1) Examples of Temperature Profile a. Reflow-Soldering Conditions Soldering Conditions for reflow soldering are shown below. Table 3 Soldering Conditions for the Diode Packages Sn-Pb Eutectic alloy of Sn-Pb Sn-Ag Sn-Bi, Sn-Cu Sn-Ag Eutectic alloy of Sn-Pb
Lead plating Solder paste Package surface temperature (upper limit) Temperature profile
Peak: 260C 220C or higher for no more than 60 s
Package surface temperature (C)
260C Max 1 to 4C/s 190C 160C 110 30s Time (s) 255C 16s Max 220C 60s Max
b. Flow-Soldering Conditions Soldering Conditions for flow soldering are shown below. Table 4 Soldering Conditions for Flow Soldering Condition 80 to 150C 1 to 3 minutes 230 to 250C 2 to 4 s Upper Limit 260C 10 s Applicability Substrate surface Temperature of the solder layer Time taken to pass through the solder layer
Item Temperature Time Solder dip Temperature Time Preheating
2.4
Cleaning
(1) Fading of the marking and color codes Clearness of markings and color-fastness of color codes may be lost due to cleaning. Be sure to check these after using cleaning agents. (2) Electrical and mechanical characteristics (discoloration, deformation, deterioration, etc.) After cleaning a PCB, some corrosive material contained in the cleaning agent or flux may remain on semiconductor devices, causing corrosion of device wiring and leads with resulting loss of reliability. Thorough cleaning is therefore required for PCBs. It is recommended that the level of purity of the PCB after cleaning should conform with the MIL standard below. (3) There is a possibility that minute Leak is generated by the snuff of flux between leads in Narrow pitch and Lower side electrode package. Please confirm the cleaning method of flux's not remaining.
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Precautions for Application Table 5 PCB Level of Purity After Cleaning
Item Standard 2 Remaining Cl volume 1 g/cm Resistance of solvent (after extraction) 2 106 cm Notes: 1. PCB surface area: Both sides of the PCB + mounted components. 2. Extract solvent: Isopropyl alcohol: H2O = 3 : 1 (Resistance of solvent before extraction is 6 106 cm) 3. Extraction method: Clean both sides of PCB with 10ml/2.54 2.54cm2 (minimum of 1 minute) 4. Measuring extracted solvent resistance: Conductivity meter See MIL-P-28809A for details of the MIL standard. (4) Ultrasonic cleaning It should be avoid to resonant to the devices. We recommend the following conditions. SMD Frequency : 28 to 29 kHz (device should have no resonance) Ultrasonic power output : 15 W/l (1 time) Time : up to 30s Others : Make sure that neither devices nor PCB come into contact with the vibration source.
2.5
Parts Layout
Environmental conditions have a decisive influence over the reliability of semiconductor devices. The layout of devices in a system should take into account temperature and heat radiation conditions as these are important for maintaining high reliability. The examples of adverse layout given in the following. (1) If a semiconductor device is located near a heat source such as a large resistor, the devices heat radiator will be exposed, and the temperature of the device will rise. If heating abnormally high, the devices reliability will suffer. Be sure to consider adequate ventilation when locating devices. (2) Near high-voltage circuitry and in the corners at the bottom stage of equipment where dust easily gathers. In this type of area, dust and debris adhering to semiconductors can cause deterioration of the insulation, giving rise to faulty operation. As a precaution, semiconductors and PCBs installed in such locations should be coated with a waterproof resin. Such waterproof coating for PCBs is extremely effective in assuring and improving reliability under adverse environmental conditions of use. For example, where misoperation can occur due to shorts caused by electrically conductive debris (soldering or plating debris) lodged between circuit board wiring and semiconductor terminals; noise due to dust build-up and moisture absorption; faults due to large current leakage; steam, water drops and condensation due to sudden temperature fluctuation leading to metal migration (Ag migration); and deterioration hermetic seal of glass-sealed diodes (see figure 4). In adverse environments where high humidity, condensation and dust build-up are prevalent, coating of PCBs is a crucial means of preserving reliability in systems that must assure reliable, maintenance-free service over a long period. While there are a wide range of coating materials available, commonly used materials include the Tuffy*1 TR-1141, TF-1150, and TF1154 products and Humi-seal R1A27*2. Notes: 1. Manufactured by Hitachi Chemical Company, Ltd. 2. Manufactured by Boxy-Brown, Inc.
49

Water a PCB
Glass Copper chloride Copper
a' Cathode
Anode
Iron/nickel a-a' cross-section drawing (enlarged)
Note : The film of copper oxide (Cu2O) on the copper surface of the Dumet Dumet wire forms a hermetic wire structure by spreading across the glass.
Enlarged drawing of area b Water (H 2O) Ag bump Pellet Fe-Ni Cavity Cu Cu2O Area of hermetic seal damage B A (3) The copper oxide (Cu2O) is reduced from point A due to hydrogen. Cu2O + H2 2Cu + H2O (4) Water penetrates the depleted area due to hydrogen reduction. (5) Steps (3) and (4) are repeated, and the hermetic seal is destroyed from point A to point B. Glass H2 (1) Water adheres to the diode surface when a reverse bias is applied. (2) With reverse bias, water undergoes electrolysis, and hydrogen is generated at the anode. Note : Oxygen (O2) is generated at the cathode.
Paht of water penetration
(6) A water-filled cavity develops due to the loss of hermetic seal. (7) Due to water penetration, there is a current leakage to the pellet surface, and the reverse current IR increases. (8) In the state described in (7), if a reverse bias is continuously applied, Ag migration occurs from the pellet anode (Ag bump).
Figure 4
Hermetic Leakage Due to Electrolytic Corrosion
50
2.6
Diode Molds
(1) When molding a diode in plastic, care should be used a buffer coating of resin or a low hardness mold material minimize stress on the diode. (2) If used a high hardness mold material, environmental changes or temperature changes could cause wire disconnection or destruction.
2.7
Surge Open Failure of DHD Type Diodes (including LLD)
If a surge voltage or current in excess of the ratings is applied to a DHD diode (including LLD), a short may develop, and in extreme cases, wire disconnection as shown in figure 5 might also occur.
Anode side Dumet Glass sleeve Chip Cathode side Dumet Before surge
Silver bump
The p-n junction is heated due to surge, and the silver bump undergoes plastic deformation. Linear expansion coefficients : Ag (20.5 106) Si (3.5 106) Glass (9.1 106) Surge
A slight gap develops between the surface of the Si chip and end of the Dumet wire, leading to contact failure and eventually an open circuit condition. Gap After surge
Figure 5
Plastic Deformation of Silver Bump Due to Heat During Surge Voltage/Current
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3.
Precautions for Circuit Mounting
Matching the circuit design and initial standards is a prerequisite for regards reliability design, while a margin must be allowed in consideration of deratings and fluctuations in characteristics. Reliability problems involve wiring, external surge, reactance load, noise margin, area of safe operation (ASO), reverse bias, flyback pulse, static electricity pulse stress and more.
3.1
General Precautions
Important factors in achieving the specified system reliability are using the devices within the parameter specifications shown in the catalog and observing the following points, taking account of the influence of peripheral components. (1) Keep the peripheral temperature as low as possible in order to avoid high temperatures in the vicinity of semiconductor elements. (2) Ensure that the power supply voltage, input voltage, power consumption, etc., are within specification, and use degrading. (3) Ensure that an excessive voltage is not applied to, or caused on, input, output, power supply, and other pins. Also ensure that these pins are not subjected to strong electromagnetic waves. (4) Ensure that static electricity is not generated during use. (5) When using high-speed elements, which have an extremely fine structure, either provide protection circuitry, etc., for the input section, or else ensure that electrostatic pulses are not applied. (6) When power is turned on and off, ensure that voltage application does not become unbalanced. For example, excessive stress will be exerted if a voltage is applied to input or power supply pins, etc., when circuit ground pins are floating. (7) In order to protect a circuit, please do not carry out use which destroys a diode electrically. An example is shown in 3.2 about the main items. (8) Note on use in electromagnetic wave environments A source of strong electromagnetic waves in the vicinity of a Zener diode may alter the characteristics of the diode. For example, a drop in the breakdown voltage has been reported when a portable wireless unit (144 MHz, 430 MHz) with a 3 W output is brought within a distance of 10 cm from a diode. Please consult Renesas if there is a risk of exposure to strong electromagnetic waves in the operating environment.
3.2
Countermeasures to Noise and Surge Voltage
Surge voltage, static electricity, noise and other problems are common to all semiconductor devices, and require countermeasures to remove the causes or reduce their influence. In designing semiconductor equipment, it is considered common practice to make an allowance of about 10% to cover fluctuations in commercial power supplies. However, failure or misoperation of semiconductor equipment could occur if mechanical equipment generating surge voltages is being used in the particular region. This is due to build-up of surge in the power line, and impulse surge can also be induced during electrical storms. Equipping the AC line with a filter like that shown in figure 6 can help reduce the effects of surge. Where surge and static electricity for the AC line does not enter indirectly, but could be applied directly to components and semiconductor devices on a circuit board, use of a shield or similar measure is required. Also, low ground impedance for a shield is essential. There is no effect if impedance is not low. When direct static electricity or surge is likely to be input as noise, introduce a protector circuit like the one shown in figure 7 as as special countermeasure. The time constant Ri Ci is set in such as way as to effectively absorb surge pulses without having influence on device operation.
52
L1 AC 100 V L2 Primary side (P) Secondary side (S) C
L1 = L2 = 2 to 10mH, C = 0.1 to 0.5F
Figure 6
Example of Surge Absorption Circuit
External noise, external surge
R1 Separate circuit R2 R3 C1 External noise, external surge C2 C3
Semiconductor devices in circuit being used
RiCi value is optimal in relation to conditions of use
Figure 7
Example of Surge Protection Circuit
3.3
Characteristic Parameters and their Relation to Reliability
Each semiconductor device has its own characteristic parameters prescribed according to function and application. Each of these parameters has a predetermined range which should be matched. In system design, the significance of these parameters varies a great deal depending on application, and design must project a margin in initial characteristics as regards the critical parameters, or derating must be carried out. In the former case, a device should be selected with regard to the limit of operation range as a system. The statistical design method should be employed, and reliability testing as well as failure criteria of Renesas semiconductor devices should also be taken into consideration. In the case of derating, refer to the derating applications given under Renesas Semiconductor Device Reliability. Since the majority of parameter fluctuations cannot be foreseen under conditions of use, although design employing initial standards is considered justifiable in many cases, design with reference to failure criteria is needed as regards significant system items or items with no margin. The following are points for consideration with regard to parameters. (1) Whether the significance of a parameter extends to system failure. (2) The state of the parameters initial value margin. (3) Does the parameter change over time, and if so, is the change in the direction of the margin? (4) Is the change permissible for use of the device with other devices? (5) Is redundant design possible? (6) Is it possible to introduce the statistical design method for parameters?
53
4.
Precautions for Storage, Transportation and Measuring
Other precautions involve problems occurring during storage, transportation and measurement. Although the general precautions for storage and transportation of electronic components can be applied as they are to semiconductor devices, the latter require certain special precautions in addition to these. The following account includes the general precautions.
4.1
Storage of Semiconductor Devices
The following methods of storage are advisable for semiconductor devices. If the precautions are not observed, faults in electrical characteristics, solderability, external appearance and other attributes may occur. In some cases, failure may also result. Precautions for storage are as follows: (1) The storage location should be kept within the optimum ranges of temperature and humidity: 5 to 35C and 45 to 75% R.H. are the optimal conditions. (2) The atmosphere in the storage location should not contain any noxious gases, and the amount of dust should be minimal. (3) Storage containers should not be susceptible to static electricity. (4) Semiconductor devices should not be subjected to loads. (5) When storing for long periods, store in the non-processed state. When leads have already been formed, corrosion at their bent portion of leads may occur. (6) Be sure that sudden temperature changes sufficient to cause condensation do not occur during storage of the devices.
4.2
Precautions for Transportation
When transporting semiconductor devices or their assembly units or subsystems, the same precautions as for other electronic components should be taken. The items listed in 4.1 and 4.2 have to be followed. (1) Transportation containers, jigs etc., should not pick up static charge due to vibration en route. (2) When transporting semiconductor devices and PCBs, try to keep mechanical vibration and shocks to an absolute minimum. Especially when bag packing of a glass-sealed type diode is dealt with, be careful of the following point. Even when the following handling is performed and there is no externally caused injury remarkable in a bag or a packing box, the products in a bag may collide and a glass chip and a crack may arise. a. Please do not perform what a floor etc. is dropped or throws the packing box containing the product to it. b. When a packing box conveys a product, please use shock absorbing material for neither vibration of transportation nor a shake to join a direct product.
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4.3
Precautions for Measuring
(1) Persons handling semiconductor devices should be grounded via a high resistance to discharge any static electricity that may be adhering to their clothing. The resistance value should be around 1 M and no other person should come between the person being discharged and ground (GND). See figure 8 for static electricity data for human bodies. Since the product shown in Table 6 is susceptible to destruction by static charge. Be specially aware, therefore, of electrical charge on persons and on equipment in the vicinity. Table 6 Static Electricity Destruction Voltage Static Electricity Destruction Voltage 30 V 80 V 100 V
Part No. HSB88YP, HSC276, HSM88AS, HSM88ASR, HSM88WA, HSM88WK, HSM198S, HSM276S, HSM276SR, HSU88, HSU276 HVU359, HVU17, HVC365 HSM107S Note: 1. Test condition: C = 200 pF, Both forward and reverse direction 1 pulse.
Static charge on clothing varies greatly with the type of clothing, covering, and physical constitution as well as ambient temperature and humidity. The following is one example of measurement of static charge on a person.
Body charge measurement example Max. Ambient voltage conditions 100% cotton shirt +4,900 V Synthetic fiber shirt * 13,000 V Ambient Synthetic fiber shirt * 3.500 V temp. 20C 100% cotton shirt +7,200 V Bare skin 410 V Relative +980 V humidity 100% cotton shirt +3,200 V Bare skin 40% Synthetic fiber shirt * 7,000 V Condition
a,b : clothing c,d : metal tub (* polyvinyl chloride synthetic fiber)
a b a (2) b a (3) b a (4) b (1)
Insulation
Iron plate
Static charge between iron plate and iron tub : 50pF Insulation resistance : 1.5 1012
Measuring method for body charge

Put on clothing (a) against bare skin and place (b) on top. The test subject should be grounded during this operation. After removing the ground line, take off clothing (b) and place in tub (d).Measurements of the electrical potential were taken at this time for this example. The (a) bare skin referred to in items (3) and (4) in the table represents a person wearing one garment with friction between the person's body and the garment.
Figure 8
Example of Measuring Static Charge on a Person
55
5. 5.1
Precautions for Use of each Line of Products Precautions for use of DHD Type Diodes
(1) Since the glass-sealed (DHD) type diode body consists of glass and lead wire solder, consider the following to prevent subjecting these diodes to unreasonable force. a. Do not drop glass-sealed (DHD) type diodes on concrete, glass plate, metal plate or any other hard surface to avoid undue mechanical shock. Such shocks could result in cracking of the glass body, deterioration of characteristics, destruction or loss of hermetic seal. b. When forming and cutting, excessive force should not be applied to the body of the glass-sealed type diode. The tension from leads to body must be kept below 10 N in such processing. It is needed to secure lead wires with approximately 30 N, or otherwise to shift the cutter blade timing of both sides. (2) Schottky barrier diodes are susceptible to destruction by static charge. Be specially aware, therefore, of electrical charge on persons and on equipment in the vicinity. (3) The main market failure modes of a diode are based on surge. Please take into consideration enough on surge and derating conditions.
5.2
Precautions for use of SMD Diodes
(1) SMD diodes are formed in consideration of PCB mountability, and can be mounted without modification. UFP, SFP, EFP,MP6 Series TURP, VSON-5, and MFP12 types are extremely small, special packages that are very susceptible to tensile force on leads. It is not used that they be mounted or later adjusted by hand. (2) When mounting on a PCB, adhesive is used to temporarily hold diodes in place before solder is applied. When a SMD diode is held by adhesive, be sure that it is not subjected to undue stress. (3) Since SMD diodes come in small package, be aware of thermal stress from soldering, flux and cleaning. Soldering should be done in as short a time as possible. When flow soldering: 260C max for 10 s. When using a soldering iron: 350C max for 3 s. Organic flux (rosin) is frequently used for soldering, and in view of corrosion resistance and insulation, this material is also recommended for soldering SMD. After soldering a SMD, wash thoroughly or use the shower method or ultrasonic method for cleaning off the flux. (Refer 2.3.2 for the recommended conditions.) (4) Compared with other diffuse junction diodes, the SMD Schottky barrier diode is exceptionally prone to damage by static electricity, so it is needed to protect these diodes. (5) When targeted for use under severe environmental conditions, SMD diodes should receive a moisture-proof coating after assembly on a PCB. It is advisable to coat the circuit board to protect it against external debris and moisture [see 2.5 (2)]. (6) Using a mounter to fix SMD diodes to a PCB can result in bending of the leads, so make sure that a force of no more than 3 N is applied. And also required to not apply superfluous force on the package or leads as being mounted, especially for UFP, SFP, EFP, TURP, VSON-5T, MFP12, MP6 Series package and the package with halogen free resin.
56
Precautions for Application (7) When the SMD is mounted through reflow soldering, avoid incorrect positioning and floating-type failures due to bad mounting balance by taking care on the following points. The left and right land patterns must have the same shape. The left and right land areas, including the wiring sections, must take up the same area and include the same amount of solder. The land position should become symmetrical. Heat must be applied to both soldering sections at the same time (the direction shown in figure 9 is recommended).
Product
Reflow direction
Substrate
Figure 9 (8) Do not apply high temperatures in soldering some of the packages, e.g. by using a soldering iron, since this applies strong thermal stress to the packages. (Please refer to the data sheet.) (9) The lead material is exposed at the end of the leads of the package, because this is a cut surface. Accordingly, the solderability of the ends of the leads has not been checked. Users of this package must check this themselves.
5.3
Precautions for use of LLD Diodes
(1) When mounting LLD diodes to a circuit board, and using adhesive to temporarily fix them in position (particular when a large volume is used), soldering and consequent heating can subject diodes to excessive stress, which could result in cracking of their glass packages. Mount LLD diodes with low hardness and small bond in temporary. (2) Use rosin type flux to assure reliable mounting. Use of chlorine containing flux can lower reliability by causing corrosion of Dumet wire. (3) Make sure that diodes are not subjected to excessive stress during or after mounting on a PCB. a. Horizontal direction : 10 N or less b. Axial direction : 5 N or less (compression and tensile forces) c. Board warp : Warp width 2 mm or less (when support gap is 90 mm)
Horizontal direction Axial direction Extent of warp
Figure 10 (4) Refer to the 5.2(7) for the notes at the time of carrying out reflow mounting of the LLD.
5.4
Precautions for use of LLD, UFP, SFP, EFP, MP6 Series, TURP, VSON-5, and MFP12 Diodes
(1) When mounting diodes to a circuit board, so make sure that flatten on the PCB. (Not becoming rough by wiring under diode body.) (2) Please superfluous power does not join a product by the curvature of a circuit board or bending by circuit board break etc.
57
5.5
5.5.1
Note on Product Safety

Renesas Efforts in the Product Safety Area
While Japan's product liability (PL) law came into effect in July 1995, Renesas has always considered product safety to be one aspect of quality, and has always stressed product safety in semiconductor products as an integral part of our product quality program. The following describes Renesas's basic approach to product safety and specific activities related to product safety. Note that the product safety promised by Renesas consists of items generally required of semiconductor products themselves, which are then used as components in user systems. Safety measure required by the customer's product application and/or usage environment must be taken by the customer. (1) Product safety measures from the product fabrication stage Renesas incorporates items related to product safety into each of the processes, such as the "sample reliability program" and the "quality approval flow" shown in the quality assurance system. Thus product safety is incorporated as an aspect of quality control from the product specification determination, development, and design stages. Table 7 lists the main product safety items in the major steps from product development through shipment and sales. Table 7 Main Product Safety Items Items that must be considered (main points) Customer applications Usage environment Catastrophic failure modes Malfunction modes Making manufacturing rules explicit and strictly following said rules. Quality assurance and evaluation/verification at each stage in the manufacturing process Provision of a complete documentation set
Main Division Product development Specification determination Design Manufacture Quality assurance Sales
(2) Documentation Renesas provides a full complement of documentation, including data sheets, that present the performance of our products so that these semiconductor products can be used safely. Renesas also issues a wide range of documents written from the standpoint of product safety so that our customers can obtain the full specified performance of our products in their applications. Table 8 Documents Related to Product Safety Specific document examples Data sheets, technology reports, and delivery specifications documents (purchase specifications documents) Reliability handbooks and packaging manuals Sales contracts and quality agreements
Application area Documents that present product specifications Documents that present usage notes Other documents (Documents produced under individual agreements with customers)
(3) Safety measures based on meetings with customers to discuss specifications and product quality Renesas is prepared to hold product quality meetings with customers to assure that our customers are able to use our products under conditions appropriate to the specifications of the product. As mentioned previously, these conditions are announced in a variety of documents. However, we are more than willing to meet with customers to discuss product selections appropriate to the customer's applications.
58
5.6
Requests to Our Customers
To use Renesas semiconductor products safely, carefully consider the following points when designing equipment and systems. (1) When using Renesas semiconductor products, read all the documentation provided carefully, and verify the specifications of the product itself as they relate to the environment under which the product will be used and operated. If you find any points in any Renesas document unclear, please report that to your Renesas sales representative. (2) If Renesas products are to be used in areas that require high reliability and high safety margins (such as trunk line communication systems, transportation system equipment, aircraft or aerospace applications, or safety equipment), be sure to take the characteristics and reliability of the semiconductor devices themselves into consideration at the unit or system design stage, and adopt appropriate failsafe design techniques in the system design. (3) Renesas does not provide semiconductor products that were developed with special consideration for use in equipment that human life may be dependent on. If you are considering using Renesas products in life support or other medical equipment, please contact your Renesas sales representative and inform us as to whether or not you have adopted safety measures in the system design. (4) Renesas is prepared to meet with customers if necessary to discuss measures such as product selection to allow semiconductor products to be used without problem. If you have any questions, doubts, or concerns about product safety, please feel free to discuss those with your Renesas sales representative.
59

1. Features of Standard Taping Specifications
Silicon diode taping specifications are classified into three major categories according to the types of automatic mounting machines of set manufacturers. (1) Axial type taping Enables automated assembly with each type of automatic mounting machine. Specifications comply with EIAJ standards. A 5mm pitch insertion is possible with MHD and UMD type diodes. (2) Radial type taping This matches Panasert and Abisert specifications. (3) Embossed type taping Can be used with all types of automatic mounting machine.
2. 2.1
Taping Specifications Axial Type Taping

DO-35 MHD
(1) Application packages
(2) Taping specifications Taping Symbol AMMO pack TA *2 Package Code DO-35 MHD Form and Dimensions Division I
52
Appearance
75 255 80
Unit: mm Quantity 5000 pcs
TD
DO-35 MHD
Division II
45
2500 pcs
26
255 50
Notes: 1. See (3) Taping dimensions, for details of form and dimensions. 2. Recommended taping specifications.
60
Standard Taping Specifications Unit: mm Quantity 5000 pcs
Taping Symbol AMMO pack TE *2
Package Code DO-35 MHD
Form and Dimensions Division III

26
Appearance
85 255 50
Notes: 1. See (3) Taping dimensions, for details of form and dimensions. 2. Recommended taping specifications. (3) Taping dimensions
b/2 b/2
d L1 b a
d L2
e c
Unit: mm Symbol a b c d e f g h | L1-L2 | JEDEC CODE 64 1.5 52.4 1.2 6 0.5 0.5 3.2 min 5.0 0.38 1.0 1.0 max 1.0 max TA21(R) I Taping Dimensions Division II III 38 1.5 38 + 1.5/1.0 26 + 1.2/0 26 + 0.5/0 6 0.4 0.5 0.2 5.0 0.38 5 0.3 1.0 max 0.5 1.0 max 0.4 max TA11(R)
61
2.2
Radial Type Taping

DO-35 MHD
(2) Taping specifications Unit: mm Taping Symbol RE *2 AMMO pack REB Package Code DO-35 Form and Dimensions
Withdrawl direction (right) Withdrawl direction (left)
(12.7)
Appearance
Withdrawn from side F
Quantity 4000 pcs
Insulation coating
(26.3) (18.5) (16.0)
(9.0) (18.0)
(230)
(Cathode position example)
F R (270)
(5.0)
(12.7)
RX * RY
MHD
(4 5)
(12.7) (5.0)
2500 pcs
(180)
F (270)
(20.5)
(9.0)
(18.0)
12.7
Withdrawn from side F. When withdrawn to the side with the F printed on it form the glass body packing: RX protrudes from the cathode RY protrudes from the anode.
Notes: 1. Dimensions are based on EIAJ RC-1008A vertical taping shape C specifications. 2. Recommended taping specifications. (3) Taping symbol of glass package Taping Symbol Taping Width Old New 52 mm TA/TK 7 26 mm TE 8 TD/TN 9
Taping Width Radial type
Taping Symbol Old New RY 5 RE/RX 6
62
(4 0)
Standard Taping Specifications (4) Taping symbols Radial taping takes the following symbols according to forming shape, cathode position, packing method and direction of withdrawl. Cathode Position Withdrawl Direction Packing Method Taping Symbol Top Bottom Right Left AMMO pack RE/REB RX When withdrawn to the side with the F printed on it form the glass body packing: RY RX protrudes from the cathode RY protrudes from the anode.
2.3
2.3.1
Embossed Type Taping

8-mm Taping
LLD MPAK-5 MPAK CMPAK CMPAK-4 VSON-5 MFP12
URP
TURP
UFP
SFP
EFP
MP6
MP6-8
(2) Taping specifications Package LLD Packing Form

Taping
Packing Unit 2500 (units/reel)
Packing Specification Code TR *2 (Taping to Right) TL (Taping to Left)
Remarks
TR withdrawl direction
TL withdrawl direction
MPAK-5 VSON-5
Taping
3000 *3 (units/reel)
TR *2 (Taping to Right) TL (Taping to Left)
MPAK CMPAK
Taping
TR *2 (Taping to Right)
(Marked surface up)
TL (Taping to Left)
(Marked surface up)
Notes: 1. Missing devices 0.2% reel, continuous miss = 0/reel. 2. Recommended taping specifications. 3. Refer to (6) Taping Symbols for the details of a packing specification code.
63
Package CMPAK-4
Packing Form
Taping
Packing Unit 3000 *3 (units/reel)
Packing Specification Code TR *2 (Taping to Right)
Remarks
(Marked surface up)
TL (Taping to Left)
3 2
(Marked surface up)
MFP12
Taping
4000 * (units/reel)
P* (Taping to Right)
Withdrawl direction
URP
Taping
TR *2 (Taping to Right)
UFP (TURP)
Taping
4000 *3 (units/reel) 8000 *3 (units/reel)
TR *2 (Taping to Right) KR *2 KR *2
KR withdrawl direction
SFP
Taping
EFP
Taping
KR *2
MP6 MP6-8
Taping
R *2
Withdrawl direction
Notes: 1. Missing devices 0.2% reel, continuous miss = 0/reel. 2. Recommended taping specifications. 3. Refer to (6) Taping Symbols for the details of a packing specification code. (3) Taping symbol of resin package Taping Symbol Taping Width Old New 8 mm TR P TL H KR R
64
Standard Taping Specifications (4) Taping reel dimensions

Unit: mm
1.0 0.5
9.5 0.5
13.0 0.5
2.0 0.5 21.0 0.8
Label
(5) Carrier tape and cover tape dimensions Unit: mm, (

1.75 0.1
178 2
): reference only
Package LLD
1.5 0.05
+0.1
Dimensions
(1.55) 0.25 0.05
4.0 0.1
(1.0)
Device Cover tape
(5.6)
4.0 0.1
2.0 0.05
1.75 0.1 3.5 0.1
8.0 0.2
Carrier tape
MPAK
1.5 0
+0.1
(1.4) 0.25 0.05

(1.1) (3.3)
4.0 0.1
8.0 0.2
Device
(5.6)
4.0 0.1
2.0 0.05
3.5 0.1
Cover tape
Carrier tape
(3.7)
65
Standard Taping Specifications Unit: mm, (

1.75 0.1
): reference only
Package MPAK-5
1.55 0.10 4.0 0.1
Dimensions
(1.5) 0.25 0.05
(1.05) (3.3)
8.0 0.2
Device
(5.6)
4.0 0.1
2.0 0.05
1.75 0.1 3.5 0.1
Cover tape
Carrier tape
(1.25)
CMPAK
1.55 +0.1 0.05 4.0 0.1
0.2 0.05
(1.05)
Device Cover tape 0.2 0.05
(5.6)
4.0 0.1
2.0 0.05
1.75 0.1 3.5 0.1
8.0 0.2
Carrier tape (1.15)
CMPAK-4
1.55 +0.1 0.05 4.0 0.1
(1.05)
Device Cover tape
0.25 0.05 Device Cover tape
(5.6)
4.0 0.1
2.0 0.05
1.75 0.1 3.5 0.1
8.0 0.2
Carrier tape
0.90 0.10
VSON-5
1.5 +0.1 0 4.0 0.1
(5.6)
4.0 0.1
2.0 0.05
3.5 0.05
8.0 0.2
Carrier tape
66
1.75 0.1
1.0 0
+0.2
(2.4)
(2.65)

1.75 0.1
): reference only
Package MFP12
2.0 0.05 4.0 0.1
Dimensions
1.5 +0.1 0
(0.18)
Carrier tape
8.0 0.1
Device
3.5 0.05
Cover tape
(0.65)
URP
1.5 0
+0.1
1.75 0.1
4.0 0.1
(1.25) 0.25 0.05

(1.1)
(1.3)
(0.73)
8.0 0.2
Device
(5.6)
4.0 0.1
2.0 0.05
1.75 0.1 3.5 0.1
Cover tape
Carrier tape
TURP
1.5 +0.1 0 4.0 0.1
(0.65) (0.20)
(2.65)
8.0 0.2
Device
(5.6)
4.0 0.1
2.0 0.05
3.5 0.1
Cover tape
1.75 0.1
Carrier tape
UFP
2.0 0.05 4.0 0.1 1.55 +0.1 0.05
0.2 0.05
Carrier tape
2.75 3.5 0.05 8.0 0.2
Device
(1.9) (1.35)
0.5 0.05
Cover tape
(1.85)
(2.9)
(2.85)
67

1.75 0.1
): reference only
Package SFP
2.0 0.05 4.0 0.1
Dimensions
1.55 0.05
0.2 0.05
Carrier tape
(2.75) 3.5 0.05 8.0 0.2
Device
(1.7) (1.2)
(1.07)
0.6 0.05
0.5 0.05
Cover tape
1.75 0.1
EFP
2.0 0.05 4.0 0.05 1.55 0.05
Carrier tape
2.75 3.5 0.05 8.00 0.1 (1.1)
(0.56)
Device
0.50 0.05
Cover tape
MP6
2.0 0.05 4.0 0.05 1.5 +0.1 0
1.75 0.10
(1.15)
(0.20)
Carrier tape
8.0 0.10
Device
(1.65)
3.50 0.03
Cover tape
(0.37)
MP6-8
4.0 0.05 2.0 0.05 1.5 +0.1 0
1.75 0.1
(0.20)
Carrier tape
3.5 0.03
8.0 0.1
Device
0.50 0.05
2.75
(1.79)
Cover tape
(0.37)
68
(1.73)
(0.72)
Standard Taping Specifications (6) Taping Symbols Taping of URP package takes the following symbol according to quantity, group in 1 reel etc. Maximum Taping Taping category Quantity code direction in 1 reel in 1 reel Group End of Group TRF [P] 3000 pcs TR TRU [P] 4 space 4 3000 pcs 10 + 1n TRV [P] Non-reflection tape on1 space Note: 1. Continuous Connected taping system of variable capacitance diode. Taping of UFP package takes the following symbols according to quantity, group in 1 reel etc. Maximum Taping Taping category Quantity code direction in 1 reel in 1 reel Group End of Group TRF [P] TR 4000 pcs TRU [P] 9 space 5 10 + 1n TRV [P] 1 space + Non-reflection tape on 1 space + 1 space KRF [R] KR 8000 pcs KRU [R] 4 space 10 10 + 1n KRV [R] Non-reflection tape on1 space Note: 1. Continuous Connected taping system of variable capacitance diode. Taping of SFP package takes the following symbols according to quantity, group in 1 reel etc. Maximum Taping Taping category Quantity code direction in 1 reel in 1 reel Group End of Group KRF [R] KR 8000 pcs Taping of EFP package takes the following symbols according to quantity, group in 1 reel etc. Maximum Taping Taping category Quantity code direction in 1 reel in 1 reel Group End of Group KRF [R] KR 10000 pcs Note: Characters in [ ] in Taping code are new code.
Remarks C.C system *1
Remarks C.C system *1
C.C system *1
Remarks
Remarks
3.
Precautions for Use
(1) Close attention should be paid to packages in order to counter dimensional faults of taping etc. Adequate care must be taken with shipping crates to avoid damage. (2) When removing articles from cases, handle with the taped portions. Putting pressure on diodes can result in pitch slippage and bending of leads. (3) When storing the products, take care so that packing cases are not damaged by stacking. Make sure the storage area is free of water leakage.
69
Selection Table According to Main Diode Applications

Recently, the range of use of electronics devices has expanded, and the number of characteristics demanded of diodes had proliferated, though it is difficult, both technologically and economically, to guarantee the entire spectrum of diode characteristics. Therefore, the characteristics listed in data sheets and other technical literatures are limited to those required for representative applications (main applications) such as the one shown in figure 1. Of course, it is possible to use diodes in applications outside the scope of data sheets etc., and we suggest you contact Renesas Sales with regard to special applications. Table 1 shows the general usage outside the scope of data books etc., where diodes are suitable or unsuitable for application.
RKV500KK
Variable Capacitance Diode for UHF/VHF tuner
REJ03G1279-0100 Rev.1.00 Oct 13, 2005
Features
Low series resistance and good C-V linearity. Super small Flat Lead Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. RKV500KK Laser Mark A7 Package Name SFP Package Code (Previous Code) PUSF0002ZB-A (SFP)
Pin Arrangement
Cathode mark Mark 1
A7
2 1. Cathode 2. Anode
Figure 1
Data Sheet Application Example
70
Selection Table According to Main Diode Applications Table 1 Suitability/Unsuitability for Applications other than the main Applications
General Detector, Modulator, High High Demodu- Speed Voltage lator Switching Switching Application other than Main Applications High FreTempequency Atterature Rectifier, Switching nuator, System Constant Compen- Detector, High Fre- Elec(band Antenna Protec- Voltage sated Mixer quency tronic switch) Switch tion Zener Varistor Schottky Rectifier Tuning
Main Application General detector, modulator, demodulator High speed switching High voltage switching High frequency switching (band switch) Attenuator, antenna switch System protection Constant voltage Zener Temperature compensated varistor Detector, mixer schottky Rectifier, high frequency rectifier Electronic tuning Note:
: Optimal use,
: Optimal use,
: Conditional use possible (contact Renesas for details), : Unusable
71
HVU17
Variable Capacitance Diode for VCO
Features
Good linearity of C-V curve. To be usable at low voltage. High figure of merit. Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information and Pin Arrangement

HVU17TRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel) Cathode mark Mark 1
Absolute Maximum Ratings

(Ta = 25C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 55 to +125 Unit V C C
Electrical Characteristics
(Ta = 25C)
Item Reverse voltage Reverse current Capacitance Symbol VR IR C1 C3 C4.5 n Q Min 15.0 50.0 16.1 5.23 5.60 50 80 Typ Max 100 85.0 27.3 8.84 Unit V nA pF Test Condition IR = 10 A VR = 9 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.5 V, f = 1 MHz C1 / C4.5 VR = 2.5 V, f = 10 MHz C = 200 pF, Both forward and reverse direction 1 pulse.
Capacitance ratio Figure of merit ESD-Capability *1 Note:
1. Failure criterion ; IR 100nA at VR =9 V
72
HVU17
Main Characteristics
108
Reverse current IR (A)
109
1010
1011
1012
12
16
20
Reverse voltage VR (V) Fig.1 Reverse current vs. Reverse voltage 100 f = 1MHz
Capacitance C (pF)
10
1.0 1.0
10 Reverse voltage VR (V)
40
Fig.2 Capacitance vs. Reverse voltage
73
HVD350B, HVC350B, HVU350B

Features
High capacitance ratio. (n = 2.80 min) Low series resistance. (rs = 0.50 max) Good C-V linearity.

HVD350BKRF
Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel)
HVC350BTRF, HVC350BKRF
Package Name : UFP Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
HVU350BTRF
Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
Cathode mark Mark
Cathode mark Mark
Cathode mark Mark
1. Cathode 2. Anode
B0
1. Cathode 2. Anode
B0
1. Cathode 2. Anode

(Ta = 25C)
Item Reverse voltage Junction temperature Storage temperature VR Tj Tstg Symbol Value 15 125 55 to +125 Unit V C C
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Symbol IR1 IR2 C1 C4 n rS Min 15.50 5.00 2.80 Typ Max 10 100 17.00 6.00 0.50 Unit nA pF Test Condition VR = 15 V VR = 15 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1 / C4 VR = 1 V, f = 470 MHz
Note: In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
74
108 109 25 30 f=1MHz
Capacitance C (pF)
0 4 8 12 16 20
1010 1011 1012 1013 1014 1015
20 15
10
5 0 0.1
Reverse voltage VR (V) Fig.1 Reverse current vs. Reverse voltage
1.0 Reverse voltage VR (V)
10
0.5 f=470MHz 0.4
Series resistance rS ()
LF = (LogC)/(LogVR)
-0.5
0.3
0.2
-1.0
0.1
0 0.5
1.0
10
30
-1.5 0.1
1.0 Reverse voltage VR (V) Fig.4 LF vs. Reverse voltage
10
Reverse voltage VR (V) Fig.3 Series resistance vs. Reverse voltage
75

Features
High capacitance ratio. (n = 2.20 min) Low series resistance. (rs = 0.60 max)

HVD355BKRF
Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
HVU355BTRF
Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel)
Cathode mark Mark
Cathode mark Mark 1 1. Cathode 2. Anode
Cathode mark Mark 1. Cathode 2. Anode
B1
2 1
B1
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Note: Symbol IR1 IR2 C1 C4 n rS Min 6.40 2.55 2.20 Typ Max 10 100 7.20 2.95 0.60 Unit nA pF Test Condition VR = 15 V VR = 15 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1 / C4 VR = 1 V, f = 470 MHz
In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
76
106 10
7
12 f = 1MHz 10
Capacitance C (pF)
108 109 10
10
Ta = 75C
1011 1012 1013

Ta = 25C
12
16
20
0 0.1
10
0.6 f = 470MHz 0.5

Series resistance rS () LF = (LogC)/(LogVR)
0.4
0.5
0.3
0.2
1.0
0.1
0 0.1
10
1.5 0.1
10
Fig.3 Series resistance vs. Reverse voltage
77
HVD359, HVU359
Features
High capacitance ratio and good C-V linearity. To be usable at low voltage.

HVD359KRF Package Name : SFP Package Code : PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel) Cathode mark Mark 1 HVU359TRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel) Cathode mark Mark 1. Cathode 2. Anode
2 1
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance ESD-Capability *1 Symbol IR1 IR2 C1 C4 n rS Min 24.8 6.00 3.00 200 Typ Max 10 100 29.8 8.30 1.50 Unit nA pF V Test Condition VR = 10 V VR = 10 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1/C4 VR = 4 V, f =100 MHz C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR 20 nA at VR =10 V 2. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
78
HVD359, HVU359
10-9
10-10
10-11
10-12
10-13
4 8 12 16 Reverse voltage VR (V)
20
Fig.1 Reverse Current vs. Reverse Voltage 60 f=1MHz 50
Capacitance C (pF)
40
30
20
10
0 0.1
10
Fig.2 Capacitance vs. Reverse Voltage
79
HVD362, HVC362, HVU362

Features
High capacitance ratio. (n = 3.0 min) Good C-V linearity.

HVD362KRF
HVC362BTRF, HVC362KRF
HVU362TRF
Cathode mark Mark 1
A2
V2
2 1
V2
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance ESD-Capability *1 Symbol IR1 IR2 C1 C4 n rS Min 41.6 10.1 3.0 80 Typ Max 10 100 49.9 14.8 2.0 Unit nA pF V Test Condition VR = 10 V VR = 10 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1 / C4 VR = 4 V, f = 100 MHz C = 200pF,Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR 20nA at VR = 10 V 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
80
109 80 f = 1MHz
Capacitance C (pF)
0 16 20
1010
60
1011
40
1012
20
1013 4 8 12 Reverse voltage VR (V) Fig.1 Reverse current vs. Reverse voltage
0 0.1 1.0 Reverse voltage VR (V) Fig.2 Capacitance vs. Reverse voltage 10
2.0 f = 100MHz 1.8 1.6
0 f = 1MHz
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 Reverse voltage VR (V) Fig.3 Series resistance vs. Reverse voltage 100
LF = (LogC)/(LogVR)
0.5
1.0
1.5
2.0 0.1
10
Fig.4 Linearity factor vs. Reverse voltage
81
HVC383B, HVU383B
Features

HVU383BTRF
Cathode mark Mark 1
F4
2 1
F4
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Symbol IR1 IR2 C1 C4 C7 n1 n2 rs Min 19.0 8.50 4.50 2.00 3.50 Typ Max 10 100 21.0 10.0 2.5 0.5 Unit nA pF Test Condition VR = 15 V VR = 15 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 7 V, f = 1 MHz C1/C4 C1/C7 VR = 1 V, f = 470 MHz
Capacitance ratio Series resistance Note:
1. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
82
HVC383B, HVU383B
106 107 40 f = 1MHz
109 10
10
Capacitance C (pF)
20
108
30
20
1011 1012 10
13
Ta=75C Ta=50C Ta=25C
10
0 0.1
10
Fig.1 Reverse current vs. Reverse voltage
0.8 f = 470MHz
0.2
0.6
LF = (LogC)/(LogVR)
1.0 Reverse voltage VR (V) 10
0.6
0.4
1.0
0.2
0 0.1
1.4 0.1
10
83
HVD365, HVC365
Features
High capacitance ratio and good C-V linearity.

HVD365KRF
HVC365TRF, HVC365KRF
Cathode mark
Mark 1 2 1. Cathode 2. Anode
Cathode mark Mark 1
V6
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance ESD-Capability *1 Symbol IR1 IR2 C1 C4 n rS Min 27.05 6.05 3.00 200 Typ Max 10 100 28.55 7.55 1.50 Unit nA pF V Test Condition VR =10 V VR = 10 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1 / C4 VR = 4 V, f = 100 MHz C = 200 pF , R = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR 20 nA at VR = 10 V 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
84
HVD365, HVC365
10-10
10-11
10-12
10-13
10-14
20
Fig.1 Reverse Current vs. Reverse Voltage 30 f=1MHz 25
Capacitance C (pF)
20
15
10
0 1.0
30
85
HVL368C, HVD368B, HVC368B

Features
Narrow terminal Capacitance deviation. Low series resistance. (rs = 1.1 max) Good C-V linearity.

HVL368CKRF
Package Name : EFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (10,000 pcs / reel)
HVD368BKRF
Cathode mark Mark 1 2 1. Cathode 2. Anode
Cathode mark Mark 1
B4
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Symbol IR1 IR2 C1 C2 C3 n rS Min 15.0 9.0 5.0 2.2 Typ Max 10 100 16.5 10.2 6.0 1.1 Unit nA pF Test Condition VR = 10 V VR = 10 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz C1 / C3 VR = 2 V, f = 470 MHz
Capacitance ratio Series resistance
Note: In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
86
HVL368C, HVD368B, HVC368B
1010 25 f = 1MHz 20
1011
Capacitance C (pF)
15
15
1012
10
1013 5
1014
10
0 0.1
10
Reverse voltage VR (V) Fig.1 Reverse current vs. Reverse voltage 1.2 f = 470MHz 1.0
0.8
0.6
0.4
0.2
0 0.1
10
87
HVD374B, HVC374B
Features
High capacitance ratio and good C-V linearity. To be usable at low voltage.

HVD374BKRF
Cathode mark
Cathode mark Mark 1
B6
1. Cathode 2. Anode

(Ta = 25C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Ratings 10 125 55 to +125 Unit V C C
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Symbol IR1 IR2 C1 C2 n rs Min 21.50 12.50 1.680 Typ Max 10 100 24.00 14.50 1.750 1.20 Unit nA pF Test Condition VR = 10 V VR = 10 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz C1/C2 VR = 1 V, f = 470 MHz
Note: The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.
88
HVD374B, HVC374B
1010 25 f = 1MHz 20
Capacitance C (pF)
1011
15
1012
10
1013 5
1014
10
15
0 1.0
40
Series resistance rS () LF = D(LogC)/D(LogVR)
Fig.2 Capacitance vs. Reverse voltage 0
0.8
0.5
0.6
0.4
1.0
0.2
0 0.1
10
1.5 1.0
100
89
HVL375C, HVC375B
Features
Narrow terminal Capacitance deviation. Low series resistance. (rs = 1.1 max) Good C-V linearity.

HVL375CKRF Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) KRF (10,000 pcs / reel)
Cathode mark Mark 1
B8
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Symbol IR1 IR2 C1 C3 C4 n rS Min 15.0 5.0 3.3 4.0 Typ Max 10 100 16.5 6.0 4.0 1.1 Unit nA pF Test Condition VR = 10 V VR = 10 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz C1 / C4 VR = 2 V, f = 470 MHz
Note: In the EFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
90
HVL375C, HVC375B
1010 25 f = 1MHz 1011
Capacitance C (pF)
20
15
1012
10
1013 5
1014
10
15
0 0.1
10
Series resistance rs ()
0.8
0.6
0.4
0.2
0 0.1
10
91
HVD376B, HVC376B
Features
High capacitance ratio (n = 4.3min) and good C-V linearity. High Q circuit can be composed due to low series resistance. (rs = 0.8 max) To be usable at low voltage.

HVD376BKRF
Cathode mark
Mark 1
Cathode mark Mark 1. Cathode 2. Anode 1
B1
B9
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Symbol IR1 IR2 C0.2 C1 C2.3 C4 n1 n2 rS Min 39.5 25.0 8.75 4.80 4.30 3.55 Typ Max 10 100 44.5 28.5 12.05 6.80 0.8 Unit nA pF Test Condition VR =10 V VR = 10 V, Ta = 60C VR = 0.2V, f = 1MHz VR = 1V, f = 1MHz VR = 2.3V, f = 1MHz VR = 4V, f = 1MHz C1/C4 C0.2/C2.3 VR = 1 V, f = 470 MHz
Note: In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
92
HVD376B, HVC376B
109 50 f = 1MHz 40
1010
(pF)
1011
Capacitance C
30
20
1012 10
1013
12
16
20
0 0.1
10
0.6 f = 470MHz 0.5
0.4
0.3
0.2
0.1
0 0.1
10
93
HVD385B, HVC385B
Features

HVD385BKRF
Cathode mark
Cathode mark Mark 1
F6
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Symbol IR1 IR2 C0.5 C2.5 n rS Min 7.20 2.70 2.43 Typ Max 10 100 7.70 3.20 2.57 0.75 Unit nA pF Test Condition VR = 10 V VR = 10 V, Ta = 60C VR = 0.5 V, f = 1 MHz VR = 2.5 V, f = 1 MHz C0.5 / C2.5 VR = 1 V, f = 470 MHz
Note: In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
94
HVD385B, HVC385B
1010 12 f=1MHz 10
10
11
Capacitance C (pF)
1012
10
13
1014
10 5 Reverse voltage VR (V)
15
1.0 f=470MHz
0.2 0.8
0.4 0.6
LF = (LogC)/(LogVR)
0.6 0.8 1.0 1.2
0.4
0.2
2.0 4.0 1.0 3.0 Reverse voltage VR (V)
5.0
1.4 0.1
10.0
95
HVC386B
Features
High capacitance ratio. (n = 1.80 min) Low series resistance. (rs = 0.85 max) Ultra small Flat Lead Package (UFP) is suitable for compact and high-density surface mount design.
Ordering Information AND Pin Arrangement

HVC386BTRF, HVC386BKRF Package Name : UFP Package Code: PWSF0002ZA-A Taping Abbreviation (Quantity) 1 TRF (4,000 pcs / reel) KRF (8,000 pcs / reel) Cathode mark Mark
F7

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Symbol IR1 IR2 C1 C4 n rS Min 43.0 18.5 1.80 Typ Max 10 100 49.0 25.5 0.85 Unit nA pF Test Condition VR =15 V VR = 15 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1 / C4 VR = 5 V, f = 470 MHz
Note: In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
96
HVC386B
1010 60 f=1MHz 50
Reverse current IR (A) Capacitance C (pF)
1011
40
1012
30
20
1013 10
1014 0
10
15
0 0.5
1.0
10
30
Reverse voltage VR (V) Fig.2 Capacitance vs. Reverse voltage
1.0 f=470MHz 0.8

0.5 0.6
LF = (LogC)/(LogVR)
1.0
0.4
1.5
0.2
0 0.5
1.0
10
30
2.0 0.5
1.0
10
30
Reverse voltage VR (V) Fig.4 Linearity factor vs. Reverse voltage
97
HVD358B, HVC358B
Features

HVD358BKRF
Cathode mark
Cathode mark Mark 1
B2
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Symbol IR1 IR2 C1 C4 n rS Min 19.5 8.00 2.20 Typ Max 10 100 21.0 9.30 0.40 Unit nA pF Test Condition VR = 15 V VR = 15 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1 / C4 VR = 1 V, f = 470 MHz
Note: In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
98
HVD358B, HVC358B
108 10
9
30 f=1MHz 25
1010 1011 10
12
Capacitance C (pF)
0 4 8 12 16 20
20
15
1013 1014 1015
10
0 0.1 1.0 Reverse voltage VR (V) 10
0.4 f=470MHz
LF = (LogC)/(LogVR)
10
0.3
-0.5
0.2
-1.0
0.1
0 0.1
-1.5 0.1
10
99
HVL396C, HVD396C
Features

HVL396CKRF
Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) KRF (10,000 pcs / reel)
HVD396CKRF
Cathode mark Mark 1 2 1. Cathode 2. Anode 1
Cathode mark
Mark 2 1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Symbol IR1 IR2 Min 14.6 5.20 2.62 Typ Max 10 50 15.8 5.80 0.40 Unit nA pF Test Condition VR = 10 V VR = 10 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1 / C4 VR = 1 V, f = 470 MHz
C1
C4 n rS
Note: In the EFP and SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
100
HVL396C, HVD396C
1010 30 f=1MHz 25
10
11
Capacitance C (pF)
20
1012
15
10
10
13
1014
10
15
0 0
0.45 f=470MHz 0.40

0.35
0.30
0.25
0.20
0.15
1.0
2.0
3.0
4.0
5.0
6.0
101
HVL399C, HVD399C
Features
High capacitance ratio. (n = 2.30 to 2.46) Low series resistance. (rs = 0.40 max)

HVL399CKRF
HVD399CKRF
Cathode mark
Mark
A3
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Symbol IR1 IR2 C0.5 C2.5 n rS Min 18.5 7.30 2.30 Typ Max 10 50 20.0 8.60 2.46 0.40 Unit nA pF Test Condition VR = 10 V VR = 10 V, Ta = 60C VR = 0.5V, f = 1 MHz VR = 2.5 V, f = 1 MHz C0.5 / C2.5 VR = 1 V, f = 470 MHz
Note: In the EFP and SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
102
HVL399C, HVD399C
109 30 f = 1MHz 25
1010
Capacitance C (pF)
20
1011
15
10
10
12
1013 0
0 5 10 15 0 1 2 3 4 5 Reverse voltage VR (V) Reverse voltage VR (V) Fig.2 Capacitance vs. Reverse voltage
Fig.1 Reverse current vs. Reverse voltage 0.30 f = 470MHz
0.25
0.20
0.15 0
103
RKV600KP, HVL355C
Features
High capacitance ratio. (n = 2.35 min) Low series resistance. (rs = 0.60 max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive.( RKV600KP)

RKV600KP R
Package Name : MP6 Package Code: PXSN0002ZB-A Taping Abbreviation (Quantity) R (10,000 pcs / reel)
HVL355CKRF
Cathode mark Mark 1. Cathode 2 2. Anode
Cathode mark

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Symbol IR1 IR2 Min Typ Max 10 Unit nA Test Condition VR = 15 V
100 VR = 15 V, Ta = 60C C1 6.62 7.02 pF VR = 1 V, f = 1 MHz C4 2.60 2.95 VR = 4 V, f = 1 MHz Capacitance ratio n 2.35 2.55 C1 / C4 Series resistance rS 0.60 VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
104
RKV600KP, HVL355C
106
10
7
12
f = 1MHz
10
Capacitance C (pF)
108
109
1010
1011 1012 1013
Ta = 75C
Ta = 25C
12
16
20
0 0
1.0
f = 470MHz
0.8
0.6
0.4
0.2
105
HVL358C
Features
High capacitance ratio. (n = 2.20 min) Low series resistance. (rs = 0.40 max) Good C-V linearity Extremely small Flat Lead Package (EFP) is suitable for compact and high-density surface mount design.

HVL358CKRF
Package Name : EFP Package Code : PXSF0002ZA-A Taping Abbreviation (Quantity) KRF (10,000 pcs / reel)
Cathode mark Mark 1

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Symbol IR1 IR2 C1 C4 n rS Min 19.50 8.30 2.20 Typ Max 10 100 20.90 8.95 2.43 0.40 Unit nA pF Test Condition VR = 15 V VR = 15 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1 / C4 VR = 1 V, f = 470 MHz
Note: In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
106
HVL358C
108 10
9
30 f=1MHz 25
Capacitance C (pF)
1010 1011 10
12
20
15
1013 1014 1015
10
12
16
20
0 0.1
10
0.4 f=470MHz
0.3
0.2
0.1
0 0.1
10
107
RKV601KP, HVL385C
Features
High capacitance ratio. (n = 2.43 min) Low series resistance. (rs = 0.75 max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive.(RKV601KP)

RKV601KP R
HVL385CKRF
Cathode mark

(Ta = 25C)
(Ta = 25C)
100 VR = 10 V, Ta = 60C C0.5 7.30 7.70 pF VR = 0.5 V, f = 1 MHz C2.5 2.90 3.18 VR = 2.5 V, f = 1 MHz Capacitance ratio n 2.43 2.57 C0.5 / C2.5 Series resistance rS 0.75 VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
108
RKV601KP, HVL385C
106 10
7
12 11 10 9
Capacitance C (pF)
f = 1MHz f=1MHz
108 109 1010 1011 1012 10

13
8 7 6 5 4 3
Ta = 75C
Ta = 25C
2 1
12
16
20
0 0
1.0 f = 470MHz 0.8

0.6
0.4
0.2
109
RKV603KP, RKV603KL
Features
High capacitance ratio. (n = 2.10 to 2.40) Low series resistance. (rs = 0.75 max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive.(RKV603KP)

RKV603KP R
RKV603KL R
Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel)
Cathode mark

(Ta = 25C)
(Ta = 25C)
100 VR = 10 V, Ta = 60C C0.5 7.38 7.92 pF VR = 0.5 V, f = 1 MHz C2.5 3.26 3.58 VR = 2.5 V, f = 1 MHz Capacitance ratio n 2.10 2.40 C0.5/C2.5 Series resistance rS 0.75 VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
110
RKV603KP, RKV603KL
106 10
7
10 f = 1MHz 8
Capacitance C (pF)
10
109 1010 1011 1012 1013
10
15
20
0 0.1
10
1.0 f = 470MHz 0.8
0.6
0.4
0.2
111
RKV604KP, RKV604KL
Features

RKV604KP R
RKV604KL R
Cathode mark

(Ta = 25C)
(Ta = 25C)
50 VR = 15 V, Ta = 60C C1 2.35 2.70 pF VR = 1 V, f = 1 MHz C3 1.22 1.42 VR = 3 V, f = 1 MHz Capacitance ratio n 1.73 2.10 C1/C3 Series resistance rS 0.70 VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
112
RKV604KP, RKV604KL
106 10
7
4.5 f = 1MHz 4.0 3.5
Capacitance C (pF)
0 4 8 12 16 20
108 109 1010 1011 10

12
3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 1 Reverse voltage VR (V) Fig.2 Capacitance vs. Reverse voltage 10
1013
1.0 f = 470MHz 0.8
0.6
0.4
0.2
113
RKV605KP, RKV605KL
Features

RKV605KP R
RKV605KL R
Cathode mark

(Ta = 25C)
(Ta = 25C)
50 VR = 10 V, Ta = 60C C0.5 18.5 20.0 pF VR = 0.5 V, f = 1 MHz C2.5 8.55 9.45 VR = 2.5 V, f = 1 MHz Capacitance ratio n 2.02 2.26 C0.5/C2.5 Series resistance rS 0.40 VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
114
RKV605KP, RKV605KL
106
10
7
30
f = 1MHz
25
Capacitance C (pF)
108
109
20
15
10
10
1011 1012 1013
10
10
15
20
0 0.1
10
1.2
f = 470MHz
1.0
0.8
0.6
0.4
0.2
115
RKV606KP, RKV606KL
Features

RKV606KP R
RKV606KL R
Cathode mark

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Symbol IR1 IR2 C1 C3 n rS Min 3.18 1.63 1.81 Typ Max 10 50 3.50 1.80 2.08 0.75 Unit nA pF Test Condition VR = 15 V VR = 15 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz C1/C3 VR = 1 V, f = 470 MHz
Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
116
RKV606KP, RKV606KL
106 10
7
6 f = 1MHz 5
Capacitance C (pF)
108 109 10
10
1011 1012 1013
10
15
0 20
0.7 f f= = 470MHz 470MHz 0.6

0.5 0.4 0.3 0.2 0.1 0 0
117
RKV607KP, RKV607KL
Features

RKV607KP R
RKV607KL R
Cathode mark

(Ta = 25C)
(Ta = 25C)
118
RKV607KP, RKV607KL
106 10
7
f = 1MHz
4
Capacitance C (pF)
10
109 1010 1011 10

12
1013
0 0 4 8 12 16 20 Reverse voltage VR (V)
1.0 f = 470MHz 0.8

0.6
0.4
0.2
119
RKV608KP, RKV608KL
Features

RKV608KP R
RKV608KL R
Cathode mark

(Ta = 25C)
(Ta = 25C)
120
RKV608KP, RKV608KL
106 10
7
7 f = 1MHz 6 5
109 1010 1011 1012 1013
Capacitance C (pF)
108
4 3 2 1 0
12
16
20
0.8 f = 470MHz 0.7

0.6 0.5 0.4 0.3 0.2 0.1 0
121
HVB350BYP
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
Features
High capacitance ratio. (n = 2.8 min) Low series resistance. (rs = 0.5 max) Good C-V linearity. CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.
HVB350BYPTR
Package Name : CMPAK-4 Package Code : PTSP0004ZB-A Taping Abbreviation (Quantity) TR (3,000 pcs / reel)
3 1. Anode 2. Anode 3. Cathode 4. Cathode
V1
1 (Top View) 2 1 (Top View) 2

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Symbol IR1 IR2 C1 C4 Min 15.5 5.0 2.8 Typ Max 10 100 17.0 6.0 0.5 Unit nA pF Test Condition VR = 15 V VR = 15 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1 / C4 VR = 1 V, f = 470 MHz
Capacitance ratio n Series resistance rs Note: 1. Per one device.
122
HVB350BYP
10-6 10
-7
30 f=1MHz 25
Capacitance C (pF)
10-8 10-9 10
-10
20
15
10-11 10-12 10-13
10
20
0 0.1
10
0.5 f=470MHz 0.4

Series resistance rS () LF = (LogC) / (Log VR)
-0.5
0.3
0.2
-1.0
0.1
0 0.5
1.0 10 Reverse voltage VR (V)
30
-1.5 0.1
10
123
RKV650KP, RKV650KL
Variable Capacitance Diode for Digital Audio
Features
Most suitable for terrestrial digital TV broadcasts capable Mobile phones. High capacitance ratio. (n = 3.25 min) Low series resistance. (rs = 0.75 max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKV650KP)

RKV650KP R
RKV650KL R
Cathode mark

(Ta = 25C)
(Ta = 25C)
Item Reverse current Symbol Min Typ Max Unit Test Condition IR1 10 nA VR = 10 V IR2 100 VR = 10 V, Ta = 60C Capacitance C0.5 7.20 7.80 pF VR = 0.5 V, f = 1 MHz C2.5 2.05 2.35 VR = 2.5 V, f = 1 MHz Capacitance ratio n 3.25 3.70 C0.5 / C2.5 Series resistance rS 0.75 VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
124
RKV650KP, RKV650KL
109 12 f=1MHz 10
10
10
Capacitance C (pF)
0 2 4 6 8 10
1011
10
12
1013
0 0.1
10
0.7 f = 470MHz 0.6
0.5 0.4 0.3 0.2 0.1 0 0.1
10
125
RKV652KP, RKV652KL
Features
Most suitable for terrestrial digital TV broadcasts capable Mobile phones. High capacitance ratio. (n = 2.28 to 2.90) Low series resistance. (rs = 1.1 max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKV652KP)

RKV652KP R
RKV652KL R
Cathode mark

(Ta = 25C)
(Ta = 25C)
Item Reverse current Symbol Min Typ Max Unit Test Condition IR1 10 nA VR = 10 V IR2 100 VR = 10 V, Ta = 60C Capacitance C1 2.90 3.30 pF VR = 1 V, f = 1 MHz C3 1.12 1.30 VR = 3 V, f = 1 MHz Capacitance ratio n 2.28 2.90 C1/C3 Series resistance rS 1.1 VR = 1 V, f =470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
126
RKV652KP, RKV652KL
1010 6 f=1MHz 5
10
11
Capacitance C (pF)
0 2 4 6 8 Reverse voltage VR (V) 10
1012
10
13
1 1014
0 0 1 2 Reverse voltage VR (V) 3
0.9 f = 470MHz 0.8
0.7
0.6
0.5
0.4
0.3
127
RKV653KP, RKV653KL
Features
Most suitable for terrestrial digital TV broadcasts capable Mobile phones. High capacitance ratio. (n = 2.40 to 3.05) Low series resistance. (rs = 1.8 max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKV653KP)

RKV653KP R
RKV653KL R
Cathode mark

(Ta = 25C)
(Ta = 25C)
Item Reverse current Symbol Min Typ Max Unit Test Condition IR1 10 nA VR = 10 V IR2 100 VR = 10 V, Ta = 60C Capacitance C1 2.60 2.90 pF VR = 1 V, f = 1 MHz C3 0.97 1.08 VR = 3 V, f = 1 MHz Capacitance ratio n 2.40 3.05 C1/C3 Series resistance rS 1.8 VR = 1 V, f =470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
128
RKV653KP, RKV653KL
1010 6 f=1MHz 5
10
11
Capacitance C (pF)
1012
10
13
1 1014 0 2 4 6 8 10 Reverse voltage VR (V) Fig.1 Reverse current vs. Reverse voltage
1.7 f = 470MHz 1.5
1.3
1.1
0.9
0.7
0.5
129
HVC316
Variable Capacitance Diode for BS/CS Tuner
Features
High capacitance ratio (n = 9.0 min) Low series resistance. (rs = 2.2 max)

HVC316TRF, HVC316KRF

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Matching error Symbol IR1 IR2 C1 C25 n rS C/C *1 Min 5.16 0.48 9.0 Typ Max 10 100 7.22 0.76 2.20 6.00 Unit nA pF % Test Condition VR = 30 V VR = 30 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 25V, f = 1 MHz C1 / C25 VR = 1 V, f = 470 MHz VR = 1 to 25 V, f = 1 MHz
Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of C/C continuous in a reel, expect extention to another group. Calculate Matching Error, (Cmax Cmin) C/C = 100 (%) Cmin 2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
130
HVC316
10-6 10-7 8
10 f=1MHz
10-8 10-9 10-10 10-11
Capacitance C (pF)
2 10-12 10-13 0
10
20
30
40
50
1.0
30
2.0 f=470MHz
LF = (LogC)/(LogVR)
1.6
0.5
1.2
0.8
1.0
0.4
1.0
1.5
1.0
30
131
HVD326C, HVC326C, HVU326C

Variable Capacitance Diode for UHF/VHF Tuner
Features
Low voltage type (tuning voltage 1 to 10 V), it is suitable for ET without DC/DC converter. Low series resistance. (rs = 0.6 max) and good C-V linearity.

HVD326CKRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel) HVC326CTRF, HVC326CKRF Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
HVU326CTRF
Cathode mark Mark 1
A1
A9
2 1
A9
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Matching error Symbol IR1 IR2 C1 C10 n rS C/C *2 Min 13.0 2.0 6.0 Typ Max 10 100 16.0 2.3 0.6 2.0 Unit nA pF % Test Condition VR = 10 V VR = 10 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 10 V, f = 1 MHz C1 / C10 VR = 5 V, f = 470 MHz VR = 1 to 10 V, f = 1 MHz
Notes: 1. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use. 2. C.C system (Continuous Connected taping system) enable to make any 10 pcs of C/C continuous in a reel, expect extention to another group. Calculate Matching Error, (Cmax Cmin) C/C = 100 (%) Cmin
132
106 107 20 25 f = 1MHz
Capacitance C (pF)
0 10 20 30 40 50
108 109
15
1010 1011 1012 1013
10
0 0.1
10
1.0 f = 470MHz 0.8
0.6
0.4
0.2
0 0.1
10
133
RKV500KK, RKV500KJ, RKV500KG

Variable Capacitance Diode for UHF/VHF Tuner
Features
Low series resistance and good C-V linearity.

RKV500KK R
Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) R (8,000 pcs / reel)
RKV500KJ P, RKV500KJ R
Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) P (4,000 pcs / reel) R (8,000 pcs / reel)
RKV500KG P
Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) P (3,000 pcs / reel)
Cathode mark Mark 1
A7
E4
2 1
E4
1. Cathode 2. Anode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Junction temperature Storage temperature Note: RL = 10 k Symbol VRM * VR Tj Tstg Value 35 34 150 55 to +150 Unit V V C C
(Ta = 25C)
Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of C/C continuous in a reel, expect extention to another group. Calculate Matching Error, (Cmax Cmin) C/C = 100 (%) Cmin 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
134
106 10
7
25 f = 1MHz 20
Capacitance C (pF)
108 109 1010 1011 1012 1013
15
10
50
0 1.0
40
0.7 f = 470MHz 0.6

Series resistance rS () LF = (LogC)/(LogVR)
0.5 0.4 0.3 0.2 0.1 0 1.0
0.5
1.0
40
1.5 1.0
40
135

Variable Capacitance Diode for VHF Tuner
Features
Low voltage type (tuning voltage 1 to 10V), it is suitable for ET without DC/DC converter. High capacitance ratio (n = 11.0 min). Low series resistance and good C-V linearity.

HVD327CKRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel) HVC327CTRF, HVC327CKRF Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
HVU327CTRF
Cathode mark Mark 1
A4
E3
2 1
E3
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Matching error Symbol IR1 IR2 C1 C10 n rS C/C *1 Min 30.5 2.6 11.0 Typ Max 10 100 33.5 2.9 0.8 2.0 Unit nA pF % Test Condition VR = 10 V VR = 10 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 10 V, f = 1 MHz C1/C10 VR = 5 V, f = 470 MHz VR = 1 to 10 V, f = 1 MHz
136
109 100 ff = = 1MHz 1MHz
1010
Capacitance C (pF)
1011
10
1012
1013
10
15
1.0 0.5
1.0
10
30
1.0 f = 470MHz 0.8

0.6
0.4
0.2
0 0.5
1.0
10
30
137

Features
Low voltage type (tuning voltage 1 to 10 V), it is suitable for ET without DC/DC converter. High capacitance ratio (n = 14.5 min) and suitable for wide band tuner. Low series resistance and good C-V linearity.

HVD328CKRF
HVC328CTRF, HVC328CKRF
HVU328CTRF
Cathode mark Mark 1
A5
V9
2 1
V9
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Matching error Symbol IR1 IR2 C1 C10 n rs C/C *1 Min 41.0 2.6 14.5 Typ Max 10 100 45.0 2.9 1.2 2.0 Unit nA pF % Test Condition VR = 10 V VR = 10 V, Ta = 60C VR = 1 V, f = 1 MHz VR = 10 V, f = 1 MHz C1/ C10 VR = 5 V, f = 470 MHz VR = 1 to 10 V, f = 1 MHz
Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of C/C continuous in a reel, expect extention to another group. Calculate Matching (Cmax Cmin) C/C = 100 (%) Cmin 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
138
109 100 f = 1MHz 1010
Capacitance C (pF)
1011
10
1012
1013
10
15
1.0 0.5
1.0
10
30
1.2 f = 470MHz 1.0

0.8
0.6
0.4
0.2
0 0.5
1.0
10
30
139

Features
High capacitance ratio (n = 11.0 min). Low series resistance and good C-V linearity.

RKV501KK R
RKV501KG P
Cathode mark Mark 1
A8
E5
2 1
E5
1. Cathode 2. Anode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Junction temperature Storage temperature Note: RL = 10 k Symbol VRM * VR Tj Tstg Value 35 34 150 55 to +150 Unit V V C C
(Ta = 25C)
140
106 107
60 f = 1MHz 50
Capacitance C (pF)
108 109 10
10
40
30
1011 1012 1013
20
10
10
20
30
40
50
0 0.5
1.0
10
30
1.0 f = 470MHz 0.8

Series resistance rS () LF = (LogC) / (LogVR)
0.0
0.5
0.6
1.0
0.4
1.5
0.2
0 0.5
1.0
10
30
2.0 0.5
1.0
10
30
141

Features
High capacitance ratio (n = 14.5 min) and suitable for wide band tuner. Low series resistance and good C-V linearity.

RKV502KK R
RKV502KG P
Cathode mark Mark 1
A9
E6
2 1
E6
1. Cathode 2. Anode

(Ta = 25C)
Item Peak Reverse voltage Reverse voltage Junction temperature Storage temperature Note: RL = 10 k Symbol VRM * VR Tj Tstg Value 35 34 150 55 to +150 Unit V V C C
(Ta = 25C)
Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of C/C continuous in a reel, expect extention to another group. Calculate Matching Error, (Cmax Cmin) C/C = 100 (%) Cmin 2. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
142
106 107
60 f = 1MHz 50
Capacitance C (pF)
108 109 1010 1011 1012 1013
40
30
20
10
10
20
30
40
50
0 0.5
1.0
10
30
2.0 1.8 1.6

0 f = 470MHz -0.5
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 10 30
LF = (LogC)/(LogVR)
-1.0
-1.5
-2.0 0.5
1.0
10
30
143
HVC308A
Variable Capacitance Diode for TV Tuner
Features
Low series resistance. (rs = 0.95 max)

HVC308ATRF, HVC308AKRF

(Ta = 25C)
(Ta = 25C)
Item Reverse current Capacitance Capacitance ratio Series resistance Note: Symbol IR1 IR2 C2 C20 n rs Min 13.7 1.65 7.12 Typ Max 10 100 15.9 2.06 0.95 Unit nA pF Test Condition VR = 30 V VR = 30 V, Ta = 60C VR = 2 V, f = 1 MHz VR = 20 V, f = 1 MHz C2/C20 VR = 5 V, f = 470 MHz
In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
144
HVC308A
109 25
1010
20
Capacitance C (pF)
0 10 20 30 40 Reverse voltage VR (V) 50
15
10
11
10
1012
1013
0 1.0
40
1.2 f = 470MHz 1.0
0.8
LF = (LogC)/(LogVR)
10 Reverse voltage VR (V) 40
0.5
0.6
0.4
1.0
0.2
0 1.0
1.5 1.0
40
145
HVM16
Variable Capacitance Diode for FM Tuner
Features
Worked by 8V, suitable for small manufacture sources of electric power.

HVM16TR Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) 3 3 1. Anode 2. Anode 3. Cathode
T3
2 1 (Top view) 2 1 (Top View)

(Ta = 25C)
Electrical Characteristics *
(Ta = 25C)
Item Reverse voltage Reverse current Capacitance Capacitance ratio Figure of merit Note: Per one device. Symbol VR IR C2 C8 n Q Min 14.0 43.0 24.6 1.65 75.0 Typ Max 50.0 48.1 29.2 1.75 Unit V nA pF Test Condition IR = 10 A VR = 9 V VR = 2 V, f = 1 MHz VR = 8 V, f = 1 MHz C2/C8 VR = 2 V, f = 100 MHz
146
HVM16
109
1010
1011
1012
1013
12
16
20
100 f = 1MHz
Capacitance C (pF)
10
1.0 1.0
40
147
RKS151KK, RKS151KJ
Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch
Features
Low capacitance. (C = 0.8 pF max) Low forward resistance. (rf = 0.7 max)

RKS151KK R
RKS151KJ P, RKS151KJ R
Cathode mark
Mark 1
K3
K3
1. Cathode 2. Anode

(Ta = 25C)
Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 35 150 125 55 to +125 Unit V mW C C
(Ta = 25C)
Item Reverse current Forward voltage Capacitance Forward resistance Note: Symbol IR VF C rf Min Typ Max 50 1.0 0.8 0.7 Unit nA V pF Test Condition VR = 25 V IF = 10 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz
1. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
148
RKS151KK, RKS151KJ
102 103 107 108
105 106 107 108 109

0 0.2 0.4 0.6 0.8 1.0
Forward current IF (A)
104
109 1010 1011 1012 1013 1014
10
20
30
40
50
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
10 f = 1MHz
10 f = 100MHz
Forward resistance rf ()
1.0 10 100
Capacitance C (pF)
1.0
1.0
0.1 0.1
0.1 0.1
1.0 Forward current IF (mA)
10
Fig.4 Forward resistance vs. Forward current
149
RKS150KK
Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch
Features
Low forward resistance. (rf = 0.7 max)

RKS150KK R
Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) R (8,000 pcs / reel) Cathode mark
Mark 1
K2
1. Cathode 2. Anode

(Ta = 25C)
Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 35 150 125 55 to +125 Unit V mW C C
(Ta = 25C)
1. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
150
RKS150KK
102 103 106 107
105 106 107 108 109

0 0.2 0.4 0.6 0.8 1.0
104
108 109 1010 1011 1012 1013
10
20
30
40
50
10 f = 1MHz
2.5 f = 100MHz 2.0
Capacitance C (pF)
1.5
1.0
1.0
0.5
0.1 1.0
40
0 10-4
10-3 Forward current IF (A)
10-2
151

Silicon Epitaxial Planar Pin Diode for Antenna Switching
Features

HVD131KRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel) HVC131TRF, HVC131KRF Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
HVU131TRF
Cathode mark Mark 1
P1
2 1
P1
1. Cathode 2. Anode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 55 to +125 Unit V V mA mW C C
(Ta = 25C)
Item Reverse current Forward voltage Capacitance Forward resistance Symbol IR VF C rf Min Typ Max 0.1 1.0 0.8 1.0 Unit A V pF Test Condition VR = 60 V IF = 10 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz
Notes: 1. In the SFP, UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
152
102 107 108
104
109
10
Ta= 50C
1010
Ta= 50C
108
Ta= 25C
1011 1012
Ta= 25C
1010
1012
0.2
0.4
0.6
0.8
1.0
1013
20
40
60
80
100
103 f = 1MHz f = 100MHz
10
Capacitance C (pF)
102
101
1.0
100
0.1 1.0
100
101 105
104
103
102
Forward current IF (A) Fig.4 Forward resistance vs. Forward current
153
HVL145, HVD145, HVC145, HVU145

Features
An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 1.8 max)

HVL145KRF Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) KRF (10,000 pcs / reel) HVD145KRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel) HVC145TRF, HVC145KRF Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel) HVU145TRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel)
Cathode mark Mark
Cathode mark
Mark 1
Cathode mark Mark

(Ta = 25C)
Value Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg HVL145 60 50 100 125 55 to +125 HVD145 60 50 150 125 55 to +125 HVC145 60 50 150 125 55 to +125 HVU145 60 50 150 125 55 to +125 Unit V mA mW C C
(Ta = 25C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *1 Symbol IR VF C rf Min 100 Typ Max 100 0.9 0.45 1.8 Unit nA V pF V Test Condition VR = 60 V IF = 2 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion; IR > 100 nA at VR = 60 V 2. In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
154
1. Cathode 2. Anode
T5
T5
1. Cathode 2. Anode
T5
HVL145, HVD145, HVC145, HVU145
10-2 10-7
10-4
10-8
10-9 10-10
10-6
Ta = 75C
Ta = 75C
10
-8
Ta = 25C Ta = 25C
Ta = 50C
10-11 10-12
Ta = 25C
10-10
10-12
0.2
0.4
0.6
0.8
1.0
10-13
20
40
60
80
100
103 f = 1MHz f = 100MHz
10
102
Capacitance C (pF)
101
1.0
100
0.1 0.1
10
10-1 -4 10
10-3
10-2
10-1
155
HVD132, HVC132
Features

HVD132KRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel) HVC132TRF Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
Cathode mark Mark 1
P2

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 55 to +125 Unit V V mA mW C C
(Ta = 25C)
Item Reverse current Forward voltage Capacitance Forward resistance Note: Symbol IR VF C rf Min Typ Max 0.1 1.0 0.5 2.0 Unit A V pF Test Condition VR = 60 V IF = 10 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz
1. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
156
HVD132, HVC132
10-2 10-7
10-4
Forward current IF (A) Reverse current IR (A)
10-8 10-9
10-6
Ta = 75C
10-10 10-11
Ta = 25C
10-8
Ta = 75C Ta = 25C Ta = -25C
10
-10
10-12
Ta = -25C
10
-12
0.2
0.4
0.6
0.8
1.0
10-130
20
40
60
80
100
103 f = 1MHz f = 100MHz
10
Capacitance C (pF)
102
101
1.0
100
0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage 100
10-1 -5 10
10-4
10-3
10-2
157
HVL142A, HVD142A, HVC142A

Features
An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 max)

HVL142AKRF Package Name : EFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (10,000 pcs / reel) HVD142AKRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel) HVC142ATRF Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
Cathode mark Mark 1
T6
T6
1. Cathode 2. Anode

(Ta = 25C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg HVL142A 30 100 100 125 55 to +125 Value HVD142A 30 100 150 125 55 to +125 HVC142A 30 100 150 125 55 to +125 Unit V mA mW C C
(Ta = 25C)
Notes: 1. Failure criterion; IR > 100 nA at VR = 30 V 2. In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
158
HVL142A, HVD142A, HVC142A
102 107 108
104
109 1010 1011 1012 1013
10
108
1010
1012
0.2
0.4
0.6
0.8
1.0
10
20
30
40
50
103 f = 1MHz f = 100MHz
10
Capacitance C (pF)
102
101
1.0
100
0.1 0.1
10
101 4 10
103
102 (A)
101
Forward current IF
159
HVL144A, HVD144A
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Features
Adopting the trench structure improves low capacitance. (C = 0.43 pF max) Low forward resistance. (rf = 1.8 max) Low operation current.

HVL144AKRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (10,000 pcs / reel) Cathode mark Mark 1 2 1. Cathode 2. Anode HVD144AKRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel) Cathode mark Mark 1
T7
1. Cathode 2. Anode

(Ta = 25C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature VR IF Pd Tj Tstg Symbol HVL144A 30 100 100 125 55 to +125 Value HVD144A 30 100 150 125 55 to +125 Unit V mA mW C C
(Ta = 25C)
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. In the EFP & SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
160
HVL144A, HVD144A
10-2
Ta = 75C
10-8
10-4
Reverse current IR (A) Forward current IF (A)
Ta = 25C
10-9 10-10
Ta = 75C
10-6
10-11
Ta = 25C
10-8
10-12 10-13
10-10
10-12
0.2
0.4
0.6
0.8
1.0
10-14
10
20
30
40
50
f = 1MHz 10
f = 100MHz
10
Capacitance C (pF)
1.0
1.0
0.1 0.1
10
0.1 10-4
10-3
10-2
10-1
161
HVL147, HVD147
Features
Adopting the trench structure improves low capacitance. (C = 0.31 pF max) Low forward resistance. (rf = 1.5 max) Low operation current.

HVL147KRF Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) KRF (10,000 pcs / reel) HVD147KRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel)
Cathode mark
Mark 1
L1
1. Cathode 2. Anode

(Ta = 25C)
Value Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature VR IF Pd Tj Tstg Symbol HVL147 30 100 100 125 55 to +125 HVD147 30 100 150 125 55 to +125 Unit V mA mW C C
(Ta = 25C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *1 Symbol IR VF C rf Min 100 Typ 2.5 Max 100 1.00 0.31 1.5 Unit nA V pF V Test Condition VR = 30 V IF = 10 mA VR = 1 V, f = 1 MHz IF = 2 mA, f = 100 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. In the EFP,SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
162
HVL147, HVD147
10-2
Ta = 75C
10-8
10-4
Ta = 25C
10-9 10-10 10-11
10-6
10-8
10-12 10-13
10-10
10-12
0.2
0.4
0.6
0.8
1.0
10-14
10
20
30
40
50
f = 1MHz
f = 100MHz 100
10
Capacitance C (pF)
1.0
10
0.1
10
1.0 0.1
10
163
RKP201KL, RKP201KK
Features
Adopting the trench structure minimize terminal capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 2.0 max) Low operation current.

RKP201KL R Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) RKP201KK R Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) R (8,000 pcs / reel)
Cathode mark

(Ta = 25C)
Value Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature VR IF Pd Tj Tstg Symbol RKP201KL 30 100 100 125 55 to +125 RKP201KK 30 100 150 125 55 to +125 Unit V mA mW C C
(Ta = 25C)
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. In the EFP and SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
164
RKP201KL, RKP201KK
10-2
Ta = 75C
10-7
10-4
Ta = 25C
10-8 10-9 10-10
10-6
Ta = 75C
10-8
10-11 10-12
Ta = 25C
10-10
10-12
0.2
0.4
0.6
0.8
1.0
10-13
10
20
30
40
50
f = 1MHz 10
f = 100MHz
10
Capacitance C (pF)
1.0
1.0
0.1 0.1
10
0.1 0.1
10
165
RKP200KP
Features
An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm0.3mm Size leadless type)

RKP200KPR Package Name : MP6 Package Code: PXSN0002ZB-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) Cathode mark Mark 1 2 1. Cathode 2. Anode

(Ta = 25C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 100 125 55 to +125 Unit V mA mW C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability *1 Symbol VF IR C rf Min 100 Typ Max 1.0 100 0.35 1.3 Unit V nA pF V Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.
166
RKP200KP
102 107
104
108
109 1010
10
108
1011 1012 1013
1010
1012
0.2
0.4
0.6
0.8
1.0
10
20
30
40
50
1.0 f = 1MHz
103 f = 100MHz
0.1 0.1
102
Capacitance C (pF)
101
100
10
101
0.1
10
167
RKP204KP
Features
An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.1 max) Low operation current. Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm 0.3mm Size leadless type)

RKP204KPR Package Name : MP6 Package Code: PXSN0002ZB-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) Cathode mark Mark 1

(Ta = 25C)
(Ta = 25C)
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.
168
RKP204KP
102 107
104
108
109 1010
10
108
1011 1012 1013
1010
1012
0.2
0.4
0.6
0.8
1.0
10
20
30
40
0.5 f = 1MHz
10 f = 100MHz
0.4
0.3
0 2 4 6 8 10
Capacitance C (pF)
1.0
0.2
0.1
0.1 0.1
10
169
RKP450KE
Ultra small Package Composite Pin Diode for Antenna Switching
Features
An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 max) Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (1.63 mm 0.67 mm Size leadless type) of diode array with four same kind of elements.

RKP450KER Package Name : MP6-8 Package Code : PXSN0008ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel)
1 8
A1
2 3 4
Mark No.1 Recognition band

1
(Top view)
RKP200KP Series

(Ta = 25C)
Item Reverse voltage Forward current Power dissipation Power dissipation Junction temperature Storage temperature Notes: 1. Per one device. 2. Value at Package total. Symbol VR IF Pd*1 Pd*2 Tj Tstg Value 30 100 100 200 125 55 to +125 Unit V mA mW mW C C
(Ta = 25C)
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6-8 package.
170
RKP450KE
102 107
104
108
109 1010
10
108
1011 1012 1013
1010
1012
0.2
0.4
0.6
0.8
1.0
10
20
30
40
50
1.0 f = 1MHz
103 f = 100MHz
0.1 0.1
102
Capacitance C (pF)
101
100
10
101
0.1
10
171
RKP451KE
Features

8 RKP451KER Package Name : MP6-8 Package Code : PXSN0008ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) 1 2 3 4 7 6 5 8 7 6 5
A2
Mark No.1 Recognition band 1 2 3 4
(Top view)
RKP200KP Series

(Ta = 25C)
Item Reverse voltage Forward current Power dissipation Power dissipation Junction temperature Storage temperature Notes: 1. Per one device. 2. Value at Package total. Symbol VR IF Pd *1 Pd *2 Tj Tstg Value 30 100 100 200 125 55 to +125 Unit V mA mW mW C C
(Ta = 25C)
172
RKP451KE
102 107
104
108
109 1010
10
108
1011 1012 1013
1010
1012
0.2
0.4
0.6
0.8
1.0
10
20
30
40
50
1.0 f = 1MHz
100 f = 100MHz
0.1
Capacitance C (pF)
10
1.0
10
0 0.1
10
173
RKP452KE
Features

RKP452KER Package Name : MP6-8 Package Code : PXSN0008ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) 1 8 7 6 5 8 7 6 5
A3
2 3 4
(Top view)
RKP200KP Series

(Ta = 25C)
(Ta = 25C)
174
RKP452KE
102 107
104
108
109 1010
10
108
1011 1012 1013
1010
1012
0.2
0.4
0.6
0.8
1.0
10
20
30
40
50
1.0 f = 1MHz
100 f = 100MHz
0.1 0.1
Capacitance C (pF)
10
1.0
10
0 0.1
10
175
RKP453KE
Features

RKP453KER Package Name : MP6-8 Package Code : PXSN0008ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) 8 7 6 5 8 7 6 5
A4
1 2 3 4
(Top view)
RKP200KP Series

(Ta = 25C)
(Ta = 25C)
176
RKP453KE
102 107
104
108

0 0.2 0.4 0.6 0.8 1.0
109 1010
10
108
1011 1012 1013
1010
1012
10
20
30
40
50
1.0 f = 1MHz
100 f = 100MHz
0.1
Capacitance C (pF)
10
1.0
10
0 0.1
10
177
RKP454KE
Features

RKP454KER Package Name : MP6-8 Package Code : PXSN0008ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) 8 7 6 5 8 7 6 5
A5
1 2 3 4 (Top view)
RKP200KP Series

(Ta = 25C)
(Ta = 25C)
178
RKP454KE
102 107
104
108
109 1010
10
108
1011 1012 1013
1010
1012
0.2
0.4
0.6
0.8
1.0
10
20
30
40
50
1.0 f = 1MHz
100 f = 100MHz
0.1
Capacitance C (pF)
10
1.0
10
0 0.1
10
179
HVM14, HVM14S, HVM14SR, HVB14S

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Features
Low forward resistance. (rf = 7.0 max) Low capacitance. (C = 0.25 pF typ)

HVM14TR ,HVM14STR, HVM14SRTR Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) HVM14 3 1. NC 2. Anode 3. Cathode 2 1 2 HVM14S 3 1. Cathode2 2. Anode1 3. Cathode1 Anode2 1 HVM14SR 3 1. Anode 1 2. Cathode 2 3. Cathode 1 Anode 2 1 HVB14STR Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) HVB14S 3 1. Cathode 2. Anode 3. Cathode Anode
H5
(Top view)
H6
(Top view)
H7
(Top view)
H6
(Top view)
Absolute Maximum Ratings *1

(Ta = 25C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: VR IF Pd Tj Tstg Symbol Value 50 50 100 125 55 to +125 Unit V mA mW C C
1. Absolute maximum ratings are described each unit separately.
Electrical Characteristics *1
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability *2 Symbol VF IR C rf Min 200 Typ 0.25 Max 1.0 100 7.0 Unit V nA pF V Test Condition IF = 50 mA VR = 50 V VR = 50 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, Both forward and reverse direction 1 pulse.
Notes: 1. Per one device. 2. Failure criterion; IR 200 nA at VR = 50 V
180
HVM14, HVM14S, HVM14SR, HVB14S
101 108
103
109
105
1010
107
10
1011
1011
0.2
0.4
0.6
0.8
1.0
1012
10
20
30
40
50
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 104
f = 1MHz
f = 100MHz
10
Capacitance C (pF)
103
102
1.0
10
0.1 1.0
100
1.0 5 10
104
103
102
181
HVU187, HVM187S, HVM187WK

Features
Low forward resistance. (rf = 5.5 max)

HVU187TRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel) HVU187 HVM187STR ,HVM187WKTR Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) HVM187S 3 1. Cathode2 2. Anode1 3. Cathode1 Anode2 1 HVM187WK 3 1. Cathode2 2. Anode1 3. Cathode1 Anode2 1
Cathode mark Mark 1
1. Cathode 2. Anode
H3
(Top view)
H1
(Top view)

(Ta = 25C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: 1. Per one device. Symbol VR IF Pd*1 Tj Tstg Value 60 50 100 125 55 to +125 Unit V mA mW C C
(Ta = 25C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *2 Symbol IR VF C rf Min 3.5 200 Typ Max 100 1.0 2.4 5.5 Unit nA V pF V Test Condition VR = 60 V IF = 10 mA VR = 0 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, Both forward and reverse direction 1 pulse.
Notes: 1. Per one device. 2. Failure criterion; IR 100 nA at VR = 60 V
182
HVU187, HVM187S, HVM187WK
102 108
104
109
106
1010
108
1010
1011
1012
0.2
0.4
0.6
0.8
1.0
1012
20
40
60
80
100
104 f = 1MHz f = 100MHz
10
Capacitance C (pF)
103
102
1.0
10
0.1 1.0
100
1.0 5 10
104
103
102
183
RKP300KL, RKP300KK, RKP300KJ

Silicon Epitaxial Planar Pin Diode for Wireless LAN
Features
Suitable for an antenna switches of wireless LAN and a cordless telephone. Super -Low capacitance. (C = 0.25 pF max) Low forward resistance. (rf = 3.7 max)

RKP300KL R Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) RKP300KK R Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) R (8,000 pcs / reel) RKP300KJ P, RKP300KJ R Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) P (4,000 pcs / reel) R (8,000 pcs / reel)
Cathode mark
Mark
L4
L4
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
In the EFP,SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
184
RKP300KL, RKP300KK, RKP300KJ
10-2 10-8
10-4
10-9 10-10 10-11
10-6
10-8
10-12 10-13
10-10
10-12
0.2
0.4
0.6
0.8
1.0
10-14
10
20
30
40
50
1.0 f = 1MHz f = 100MHz
100
Capacitance C (pF)
10
0.1 0.1
1.0
10
100
1.0 0.1
10
185
HVC190
Features
Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 3.0 typ)

HVC190TRF, HVC190KRF Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF(4,000 pcs / reel) KRF (8,000 pcs / reel) Cathode mark Mark 1
H9
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability *1 Symbol VF IR C rf Min 200 Typ 3.0 Max 1.0 100 0.35 5.0 Unit V nA pF V Test Condition IF = 50 mA VR = 50 V VR = 50 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, Both forward and reverse direction 1 pulse
Notes: 1. Failure criterion ; IR 200 nA at VR = 50 V 2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
186
HVC190
10-1 10-7 10-8 10
-3
10-5
10-9 10-10 10-11 10-12 10-13
10-7
10-9
10-11
0.2
0.4
0.6
0.8
1.0
10-14
10
20
30
40
50
10 f=1MHz
104 f = 100MHz
1.0
103
Capacitance C (pF)
102
0.1
10
0.01 0.1
1.0
10
100
1.0 -4 10
10-3
10-2
10-1
187
RKP300WKQE
Features
Suitable for an antenna switches of wireless LAN and a cordless telephone. Super -Low capacitance.(C = 0.25 pF max) Low forward resistance. (rf = 3.7 max)
RKP300WKQEP Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) P(3,000 pcs / reel)
P8
2 1
2 (Top view) 1
(Top view)
1. Anode 2. Anode 3. Cathode

(Ta = 25C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Per one device 100 mW. Symbol VR IF Pd * Tj Tstg Value 30 50 200 125 55 to +125 Unit V mA mW C C
(Ta = 25C)
Item Reverse current Forward voltage Capacitance Forward resistance Symbol IR VF C rf Min Typ Max 100 1.0 0.25 3.7 Unit nA V pF Test Condition VR = 30 V IF = 10 mA VR = 20 V, f = 1 MHz IF = 10 mA, f = 100 MHz
188
RKP300WKQE
10-2 10-8
10-4
10-9 10-10 10-11
10-6
10-8
10-12 10-13
10-10
10-12
0.2
0.4
0.6
0.8
1.0
10-14
10
20
30
40
50
1.0 f = 1MHz
f = 100MHz
100
Capacitance C (pF)
10
0.1 0.1
1.0
10
100
1.0 0.1
10
189
1S2076
Silicon Epitaxial Planar Diode for High Speed Switching
Features
Low capacitance. (C = 3.0 pF max) Short reverse recovery time. (trr = 8.0 ns max)

1S2076TA Package Name : DO-35 Package Code : GRZZ0002ZB-A Taping Abbreviation (Quantity) 1 TA (5,000 pcs / reel)
2 Cathode band (Light Blue)
1. Cathode 2. Anode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR IFM IFSM * IO Pd Tj Tstg Value 35 30 450 1 150 250 175 65 to +175 Unit V V mA A mA mW C C
(Ta = 25C)
Item Symbol Min Typ Max 0.8 100 3.0 8.0 Unit V nA pF ns Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = IR = 10 mA, Irr = 1 mA Forward voltage VF 0.64 Reverse current IR Capacitance C Reverse recovery time trr * Note: Reverse recovery time test circuit
DC Supply 0.1 F Ro = 50 Pulse Generator Trigger
3 k Sampling Oscilloscope Rin = 50
190
1S2076
10-1 10-4 Ta = 125C
10-5 10-2
125 C Ta = 75C Ta = 25C Ta = -25C
10-6
Ta = 75C
Ta =
10-7 Ta = 25C 10
-8
10
-3
10-4
0.2
0.4
0.6
0.8
1.0
1.2
10-9
10
20
30
40
50
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
100
191
1S2076A
Features
Low capacitance. (C = 3.0 pF max) Short reverse recovery time. (trr = 8.0 ns max) High reliability with glass seal.

1S2076ATA Package Name : DO-35 Package Code : GRZZ0002ZB-A Taping Abbreviation (Quantity) 1 TA (5,000 pcs / reel)
2 Cathode band (Navy Blue)
1. Cathode 2. Anode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR IFM IFSM * IO Pd Tj Tstg Value 70 60 450 1 150 250 175 65 to +175 Unit V V mA A mA mW C C
(Ta = 25C)
Item Symbol Min Forward voltage VF 0.64 Reverse current IR Capacitance C Reverse recovery time trr * Note: Reverse recovery time test circuit
DC Supply 0.1 F Ro = 50 Pulse Generator Trigger
Typ
Max 0.8 0.1 3.0 8.0
Unit V A pF ns
Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = IR = 10 mA, Irr = 1 mA
192
1S2076A
10-1 10-4 Ta = 125C
10-5 10-2
125 C Ta = 75C Ta = 25C Ta = -25C
10-6
Ta = 75C
Ta =
10-7 Ta = 25C 10
-8
10
-3
10-4
0.2
0.4
0.6
0.8
1.0
1.2
10-9
10
20
30
40
50
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
100
193
1SS119
Features

1SS119TA Package Name : MHD Package Code : GRZZ0002ZC-A Taping Abbreviation (Quantity) TA (5,000 pcs / reel)
1. Cathode 2. Anode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-Repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR IO IFM IFSM * Pd Tj Tstg Value 35 30 150 450 1 250 175 65 to +175 Unit V V mA mA A mW C C
(Ta = 25C)
Item Symbol Min Typ Max 0.8 0.1 3.0 3.5 Unit V A pF ns Test Condition IF = 10 mA VR = 30 V VR = 1 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50 Forward voltage VF Reverse current IR Capacitance C Reverse recovery time trr * Note: Reverse recovery time test circuit
DC Supply 0.1 F Pulse Ro = 50 Generator Trigger
194
1SS119
101 104 Ta = 125C 105 102
Ta = 125 C Ta = 75C Ta = 25C Ta = -25C
106
Ta = 75C
107 Ta = 25C 108
10
104
0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V)
1.2
109
50
Fig.1 Forward current vs. Forward voltage
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
100
195
1SS120
Features

1SS120TA Package Name : MHD Package Code : GRZZ0002ZC-A Taping Abbreviation (Quantity) TA (5,000 pcs / reel)
1. Cathode 2. Anode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-Repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR IO IFM IFSM * Pd Tj Tstg Value 70 60 150 450 1 250 175 65 to +175 Unit V V mA mA A mW C C
(Ta = 25C)
Item Symbol Min Typ Max 0.8 0.1 3.0 3.5 Unit V A pF ns Test Condition IF = 10 mA VR = 60 V VR = 1 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50 Forward voltage VF Reverse current IR Capacitance C Reverse recovery time trr * Note: Reverse recovery time test circuit
DC Supply 0.1 F Pulse Ro = 50 Generator Trigger
196
1SS120
101 104 Ta = 125C 105 102
125 C Ta = 75C Ta = 25C Ta = -25C
106
Ta = 75C
Ta =
107 Ta = 25C 108
10
104
1.2
109
100
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
100
197
HSM123
Features
Low capacitance, proof against high voltage. Fast recovery time. (trr = 3.0ns max)

HSM123TR, HSM123TL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3 1. Cathode2 2. Anode1 3. Cathode1 Anode2
A9
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Notes: 1. Per one device. 2. Within 1 s forward surge current. Symbol VRM VR IFM IFSM *2 IO Tj Tstg Value 85 80 300 4 100 150 55 to +150 Unit V V mA A mA C C
(Ta = 25C)
Item Forward voltage Symbol VF VF VF IR C trr Min Typ 0.70 0.79 0.85 1.0 Max 1.0 1.0 1.2 0.1 4.0 3.0 Unit V Test Condition IF = 10 mA IF = 50 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50
V V
A pF ns
Reverse current Capacitance Reverse recovery time
198
HSM123
10-2 10-3
10-5
10-4 10-5 10-6 10-7 10-8 10-9
10-6
10-7
10-8
0.2
0.4
0.6
0.8
1.0
10-9
20
40
60
80
100
Forward voltage VF (V) Fig.1 Forward Current vs. Forward Voltage
Reverse voltage VR (V) Fig.2 Reverse Current vs. Reverse Voltage
f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
100
199
HSM124S
Silicon Epitaxial Planar Diode for Switching
Features
Low reverse current. (IR = 0.01 A max)

HSM124STR, HSM124STL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3 1. Cathode2 2. Anode1 3. Cathode1 Anode2
A1
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Symbol VF VF VF IR C trr Min Typ Max 1.0 1.0 1.2 0.01 4.0 100 Unit V V V A pF ns Test Condition IF = 10 mA IF = 50 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50
Reverse current Capacitance Reverse recovery time Note: 1. Per one device
200
HSM124S
10-2 10-3 10-4
10-9
10-5 10-6 10-7 10-8 10-9 10-10 10-11 0 0.2 0.4 0.6 0.8 1.0
10-10
10-11
10-12
10-13
20
40
60
80
100
f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
100
201
HSM221C
Features
Low capacitance, proof against high voltage. Fast recovery time. (trr = 3.0ns max)

HSM221CTR, HSM221CTL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3
A2
2 1
(Top view)
2 1 (Top View)
1. NC 2. Anode 3. Cathode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: 1. Value at duration of 1 s. Symbol VRM VR IFM IFSM *1 IO Tj Tstg Value 85 80 300 4 100 150 55 to +150 Unit V V mA A mA C C
(Ta = 25C)
V V
A pF ns
202
HSM221C
10-1 10-4 10-5
10-2
10-6 10-7 10-8 10-9 10-10
10-3
75 C Ta=
Ta= 75C
5C -2 5 C
Ta= 50C Ta= 25C
Ta=
10-4
Ta
=2
Ta= 0C Ta= -25C
10
-5
10-6
0.2
0.4
0.6
0.8
1.0
10-11
20
40
60
80
100
f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
10
100
203
HSM223C
Features
Low capacitance, proof against high voltage. Fast recovery time. (trr = 3.0 ns max)

A8
2 1
(Top view)
2 1 (Top View)
1. NC 2. Cathode 3. Anode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: 1. Value at duration of 1 s. Symbol VRM VR IFM IFSM *1 IO Tj Tstg Value 85 80 300 4 100 150 55 to +150 Unit V V mA A mA C C
(Ta = 25C)
V V
A pF ns
204
HSM223C
10-1 10-4 10-5
10-2
10-6 10-7 10-8 10-9 10-10
10-3
75 C Ta=
Ta= 75C Ta= 50C Ta= 25C
Ta=
10-4
Ta
=2
5C -2 5 C
Ta= 0C Ta= -25C
10
-5
10-6
0.2
0.4
0.6
0.8
1.0
10-11
20
40
60
80
100
f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
10
100
205
HSM2836C
Features
Fast recovery time. (trr = 20 ns max)

A4
2 1
(Top view)
2 1 (Top View)
1. Cathode 2. Cathode 3. Anode

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Symbol VF VF VF IR C trr Min Typ 0.72 0.83 0.90 2.5 Max 1.0 1.0 1.2 0.1 4.0 20 Unit V Test Condition IF = 10 mA IF = 50 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50
V V
A pF ns
Reverse current Capacitance Reverse recovery time Note: 1. Per one device.
206
HSM2836C
10-1 10-4 10-5
10-2
10-6
Ta= 75C
10-3
75 C Ta=
=2
5C -25 C
10
-7
Ta= 50C Ta= 25C Ta= 0C Ta= -25C
Ta=
10-4
Ta
10-8 10-9 10-10
10
-5
10-6
0.2
0.4
0.6
0.8
1.0
10-11
20
40
60
80
100
f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
10
100
207
HSM2838C
Features
Fast recovery time. (trr = 3.0 ns max)

HSM2838CTR, HSM2838CTL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3 1. Anode 2. Anode 3. Cathode
A6
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
(Ta = 25C)
V V
A pF ns
208
HSM2838C
10-1 10-4 10-5
10-2
10-6 10-7 10-8 10-9 10-10
10-3
75 C Ta=
Ta= 75C Ta= 50C Ta= 25C
Ta=
10-4
Ta
=2
5C -2 5 C
Ta= 0C Ta= -25C
10
-5
10-6
0.2
0.4
0.6
0.8
1.0
10-11
20
40
60
80
100
f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
10
100
209
HSD119, HSC119, HSU119

Features
Low capacitance. (C = 2.0 pF max) Short reverse recovery time. (trr = 3.0 ns max) Lineup of environmental friendly Halogen free type (HSU119-N)

HSD119KRF
HSC119TRF, HSC119CKRF
HSU119TRF HSU119-NTRF(Halogen-free type)

Cathode mark Mark 1
H1
H1
H1
1. Cathode 2. Anode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: 1. Within 1s forward surge current. Symbol VRM VR IFM IFSM *1 IO Tj Tstg Value 85 80 300 4 100 125 55 to +125 Unit V V mA A mA C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Reverse recovery time*1
DC Supply
Symbol VF1 VF2 IR C trr
Min
Typ
Max 0.8 1.2 0.1 2.0 3.0
Unit V V A pF ns
Test Condition IF = 10 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50
Notes: 1. Reverse recovery time test circuit.

0.1F
3k
Sampling Rin = 50 Oscilloscope
Ro = 50 Pulse Generator
Trigger
2. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use. 210
HSD119, HSC119, HSU119
1.0 104 105
106 10
7
Ta=75C Ta=50C Ta=25C
10
108 109 1010 1011
103
Ta = 75 C Ta = 25C Ta = -25C
102
0.2
0.4
0.6
0.8
1.0
1.2
20
40
60
80
100
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
10
211
HSB123
Features
Low capacitance, proof against high voltage. Fast recovery time. (trr = 3.0 ns max)

HSB123TR, HSB123TL Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3 1. Cathode2 2. Anode1 3. Cathode1 Anode2
A9
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Symbol VRM VR IFM *1 IFSM *2 IO *1 Tj Tstg Value 85 80 300 4 100 150 55 to +150 Unit V V mA A mA C C
Notes: 1. Two device total. 2. Value at duration of 1 s, two device total.
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 VF3 IR C trr Min Typ Max 1.0 1.0 1.2 0.1 2.0 3.0 Unit V Test Condition IF = 10 mA IF = 50 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50
V V
A pF ns
212
HSB123
10-2 10-3 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-10 10-7 10-6
10-8
10-9
0.2
0.4
0.6
0.8
1.0
20
40
60
80
100
f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
100
213
HSB124S
Silicon Epitaxial Planar Diode for Switching
Features
Low reverse current. (IR = 0.01 A max)

HSB124STR, HSB124STL Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3 1. Cathode 2. Anode 3. Cathode Anode
A1
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Note: 1. Per one device Symbol VF IR C trr Min Typ Max 1.2 0.01 4.0 100 Unit V A pF ns Test Condition IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50
214
HSB124S
10-2 10-3 10-4
10-9
10-5 10-6 10-7 10-8 10-9 10-10 10-11 0 0.2 0.4 0.6 0.8 1.0
10-10
10-11
10-12
10-13
20
40
60
80
100
f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
100
215
HSB2836
Features
Fast recovery time. (trr = 20 ns max)

HSB2836TR, HSB2836TL Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3 1. Cathode 2. Cathode 3. Anode
A4
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Symbol VF VF VF IR C trr Min Typ Max 1.0 1.0 1.2 0.1 4.0 20 Unit V Test Condition IF = 10 mA IF = 50 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50
V V
A pF ns
216
HSB2836
10-2 10-3 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-10 10-7 10-6
10-8
10-9
0.2
0.4
0.6
0.8
1.0
20
40
60
80
100
f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
100
217
HSB2838
Features
Fast recovery time. (trr = 3.0 ns max).

HSB2838TR, HSB2838TL Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3 1. Cathode 2. Cathode 3. Anode
A6
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 VF3 IR C trr Min Typ Max 1.0 1.0 1.2 0.1 2.0 3.0 Unit V Test Condition IF = 10 mA IF = 50 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50
V V
A pF ns
218
HSB2838
10-2 10-3 10-6
10-5 10-6 10-7 10-8 10-9 10-10

0 0.2 0.4 0.6 0.8 1.0
10-4
10-7
10-8
10-9
10-10 0 20 40 60 80 100 Forward voltage VF (V) Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0
100
219
HSU83
Silicon Epitaxial Planar Diode for High Voltage Switching
Features
High reverse voltage. (VR = 250 V)

HSU83TRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) 1 TRF (3,000 pcs / reel) Cathode mark Mark

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: 1. Value at duration of 10 ms. Symbol VRM VR IFM IFSM *1 IO Tj Tstg Value 300 250 300 2 100 150 55 to +150 Unit V V mA A mA C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR1 IR2 C trr Min Typ Max 1.2 0.2 100 3.0 100 Unit V A pF ns Test Condition IF = 100 mA VR = 250 V VR = 300 V VR = 0 V, f = 1 MHz IF = IR = 30 mA, Irr = 3 mA
220
HSU83
102 103
105
104 105 106 107 108 109
106
107
108
0.2
0.4
0.6
0.8
1.0
109
50
100
150
200
250
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
10
221
RKS101KG
Silicon Epitaxial Planar Diode for High Voltage Switching
Features
Short reverse recovery time enable fast switching.

RKS101KGTRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel) Cathode mark Mark
H3
1. Cathode 2. Anode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Notes: 1. 10 ms sine wave 1 pulse. 2. See from Fig.4 to Fig.6. Symbol VRM VR IFM IFSM *1 IO *2 Tj Tstg Value 420 400 300 2 100 150 55 to +150 Unit V V mA A mA C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Thermal resistance Note: Symbol VF IR C trr Rth(j-a) Min Typ 600 Max 1.5 10 3 100 Unit V A pF ns C/W Test Condition IF = 100 mA VR = 400 V VR = 0 V, f = 1 MHz IF = IR = 30mA, Irr = 3mA, RL = 50 Polyimide board *1
1. Polyimide board
20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
222
RKS101KG
10-1 10-2
Pulse test
10-5
Ta = 75C Ta = 75C Ta = 50C
Pulse test
10-3 10-4 10-5 10-6 10-7 10-8
10-6
Ta = 50C
Ta = 25C
10-7
Ta = 25C
10-8
0.2
0.4
0.6
0.8
1.0
1.2
10-9
100
200
300
400
500
1.0
f = 1MHz Pulse test
Capacitance C
(pF)
0.1 0.1
1.0
10
100
223
RKS101KG
0.2 D=1/6 0A 0.15 t T Ta = 25C t D= T D=1/3 Sin D=1/2 DC 0.2
Reverse power dissipation Pd (W)
Forward power dissipation Pd (W)
0V D=5/6 t 0.15 T Tj = 150C 0.1 D=1/2 t D= T
D=2/3
0.1
Sin 0.05
0.05
0 0
0.05
0.1
0.15
0 0
100
200
300
400
500
Forward current IF (A) Fig.4 Forward power dissipation vs. Forward current
Reverse voltage VR (V) Fig.5 Reverse power dissipation vs. Reverse voltage
0.12 VR = 200V
Average rectified current IO (A)
Tj = 150C Rth(j-a) = 600C/W DC D=1/2
0.1 0.08 0.06 0.04 0.02 0 -25

D=1/3
D=1/6 Sin(=180)
25 50 75 100 125 150
Ambient temperature Ta (C) Fig.6 Average rectified current vs. Ambient temperature
224
HSB226S, HSB226WK
Silicon Schottky Barrier Diode for High Speed Switching
Features
Low reverse current, Low capacitance.

HSB226STR , HSB226WKTR Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) HSB226S
3
HSB226WK
3
1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2

1
E7
(Top view)
E6
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction temperature Storage temperature Notes: 1. 10 ms sine wave 1 pulse 2. Two device total Symbol VRRM IFSM *1 *2 IF *2 Tj Tstg Value 25 200 50 125 55 to +125 Unit V mA mA C C
Electrical Characteristics *
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Note: Per one device Symbol VF1 VF2 IR C Min Typ Max 0.33 0.38 450 2.80 Unit V nA pF Test Condition IF = 1 mA IF = 5 mA VR = 20 V VR = 1 V, f = 1 MHz
225
HSB226S, HSB226WK
101 100 101
104
105
Ta = 75C
102 103 104 105 106 107 108 0 0.2 0.4 0.6 0.8 1.0
Ta = 75C Ta = 25C
106
107
Ta = 25C
108
10
20
30
40
f = 1MHz 10
Capacitance C (pF)
1.0
0.1 0.1
10
226
HSB276AS
Silicon Schottky Barrier Diode for Balanced Mixer
Features
High forward current, Low capacitance. HSB276AS which is interconnected in series configuration is designed for balanced mixer use.

HSB276ASTR Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) HSB276AS
3
E8
(Top view)
2 1

(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device Symbol VRRM VR IO *1 Tj Tstg Value 5 3 30 125 55 to +125 Unit V V mA C C
(Ta = 25C)
Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability *
2
Symbol VR IR IF C C
Min 3 35 30
Typ
Max 50 0.90 0.10
Unit V A mA pF pF V
Test Condition IR = 1 mA VR = 0.5 V VF = 0.5V VR = 0.5 V, f = 1 MHz VR = 0.5 V, f = 1 MHz C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Per one device 2. Failure criterion ; IR 100 A at VR = 0.5 V
227
HSB276AS
101 102
102
103
103
Ta = 75C
104
Ta = 75C
104
Ta = 25C
105
Ta = 25C
105
0.2 0.4 0.6 0.8 Forward voltage VF (V)
1.0
106
5.0
f=1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
10
228
HSB276S
Features
High forward current, Low capacitance. HSB276S which is interconnected in series configuration is designed for balanced mixer use.

HSB276STR Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel)
C2
2 1
(Top view)
(Top view)

(Ta = 25C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device Symbol VR IO *1 Tj Tstg Value 3 30 125 55 to +125 Unit V mA C C
(Ta = 25C)
Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability *2 Symbol VR IR IF C C Min 3 35 30 Typ Max 50 0.90 0.10 Unit V A mA pF pF V Test Condition IR = 1 mA VR = 0.5 V VF = 0.5V VR = 0.5 V, f = 1 MHz VR = 0.5 V, f = 1 MHz C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
229
HSB276S
101 102
103
102
103
104
104
105
105
1.0
106
5.0
f=1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
10
230
HSB88AS, HSB88WA, HSB88WK, HSB88YP

Features
Low reverse current, Low capacitance. CMPAK package is suitable for high density surface mounting and high speed assembly.

HSB88ASTR ,HSB88WATR, HSB88WKTR Package Name : CMPAK -4Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) HSB88AS
3
HSB88YPTR Package Name : CMPAK-4 Package Code: PTSP0004ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) HBB88WK
3
HSB88WA
3
HSB88YP
4 3
2 3
1. Cathode 2 2. Anode 1 3. Cathode 1 1 Anode 2

2 3 1 2 3 1
1. Anode 2. Anode 3 Cathode

1 4 2 3
1. Anode 2. Anode 3. Cathode 4. Cathode
C1
2 1
C7
2 1 2
C4
1
C1
1 2
(Top view)
(Top view)
(Top view)
(Top view)

(Ta = 25C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device. VR IO *1 Tj Tstg Symbol Value 10 15 125 55 to +125 Unit V mA C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Capacitance deviation Forward voltage deviation ESD-Capabilityme *2 Symbol VF1 VF2 IR1 IR2 C C VF Min 0.350 0.500 30 Typ Max 0.420 0.580 0.2 10 0.80 0.10 10 Unit V A pF pF mV V Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Per one device. 2. Failure criterion ; IR > 0.4 A at VR = 2 V
231
HSB88AS, HSB88WA, HSB88WK, HSB88YP
10-2 10-5
Reverse current I R (A)
(A)
10-3
10-6 Ta = 75C 10-7
Forward current IF
10-4
Ta = 75C
Ta = 25C
10-5
10-8
Ta = 25C
10-6 0 0.1 0.2 0.3 0.4 0.5 (V) 0.6 Forward voltage VF
10-9 0 5 10 (V) 15 Reverse voltage VR
f=1MHz
10
Capacitance C
(pF)
1.0 0.1 0.1 1.0 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage 10
232
HSL226, HSD226, HSC226, HSU226

Features
Low Power consumption (Low reverse leak current) and high speed (Low capacitance). Lineup of Environmental friendly Halogen free type (HSL226-N) (HSD226-N)

HSL226KRF HSL226-NKRF(Halogen-free type) Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) KRF (10,000 pcs / reel) HSD226KRF HSD226-NKRF(Halogen-free type) Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel) Cathode mark HSC226TRF, HSC226KRF Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel) HSU226TRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel)
Mark 1
Cathode mark Mark 1
S4
S4
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Non-Repetitive Peak forward surge current Forward current Junction temperature Storage temperature Note: 10 ms Sine Wave 1 pulse Symbol VRRM IFSM * IF Tj Tstg Value 25 200 50 125 55 to +125 Unit V mA mA C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Symbol VF1 VF2 IR C Min Typ Max 0.33 0.38 450 2.80 Unit V Test Condition IF = 1 mA IF = 5 mA VR = 20 V VR = 1 V, f = 1 MHz
S7
V
nA pF
Note: In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
233
HSL226, HSD226, HSC226, HSU226
101 100 10-1 10-5 Ta=75C 10-4 Pulse test
10-2 10-3 10-4 10-5 10-6 10-7 10-8
Ta=75C Ta=25C
10-6 Ta=25C 10-7
10-8 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V)
10
20
30
40
f=1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
10
234
HSC276, HSU276
Silicon Schottky Barrier Diode for Detector and Mixer
Features
High forward current, Low capacitance.

HSC276TRF, HVC276KRF Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
HSU276TRF
Cathode mark Mark 1
C2
1. Cathode 2. Anode

(Ta = 25C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 10 ms Sine Wave 1 pulse Symbol VR IO Tj Tstg Value 3 30 125 55 to +125 Unit V mA C C
(Ta = 25C)
Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability *1 Symbol VR IR IF C Min 3 35 30 Typ Max 50 0.85 Unit V A mA pF V Test Condition IR = 1 mA VR = 0.5 V VR = 0.5 V VR = 0.5 V, f = 1 MHz C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR 100 A at VR = 0.5 V 2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
235
HSC276, HSU276
101 102
102
103
103
Ta = 75C
104
Ta = 75C
104
Ta = 25C
105
Ta = 25C
105
1.0
106
5.0
f=1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
10
236
HSD276A, HSC276A, HSU276A

Silicon Schottky Barrier Diode for Detector
Features
High forward current, Low capacitance.

HSD276AKRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel) Cathode mark Mark 1 HSC276ATRF, HSC276AKRF Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel) Cathode mark Mark 1 1. Cathode 2. Anode HSU276ATRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel) Cathode mark Mark 1. Cathode 2. Anode
S2
S5
2 1
S5
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VRRM VR IO Tj Tstg Value 5 3 30 125 55 to +125 Unit V V mA C C
(Ta = 25C)
Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability *1 Symbol VR IR IF C Min 3.0 35 30 Typ Max 50 0.85 Unit V A mA pF V Test Condition IR = 1 mA VR = 0.5 V VF = 0.5 V VR = 0.5 V, f = 1 MHz C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 A at VR = 0.5 V 2. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
237
HSD276A, HSC276A, HSU276A
10-1 10-2
(A)
Forward current IF
Reverse current IR
(A)
10-2
10-3
Ta = 75C
10-3
Ta = 75C
10-4
Ta = 25C
10
-4
Ta = 25C
10
-5
10-5
0.2
0.4
0.6
0.8
1.0
10-6
1.0
2.0
3.0
4.0
5.0
f=1MHz 10
(pF) Capacitance C
1.0
0.1 0.1
10
238
HSD278, HSC278
Features
Low forward voltage, Low capacitance.

HSD278KRF
HSC278TRF, HSC278KRF
Cathode mark
Mark 1
S1
S6
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage Non-Repetitive peak forward surge current Peak forward current Average rectified current Junction temperature Storage temperature Note: 10 ms sine wave 1 pulse. Symbol VRRM VR Value 30 30 200 150 30 125 55 to +125 Unit V V mA mA mA C C
IFSM * IFM
IO Tj Tstg
(Ta = 25C)
Item Forward voltage Reverse current Capacitance ESD-Capability *1 Symbol VF1 VF2 IR C Min 100 Typ Max 0.30 0.95 700 1.5 Unit V nA pF V Test Condition IF = 1 mA IF = 30 mA VR = 10 V VR = 1 V, f = 1 MHz C = 200 pF, RL = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR 1.4 A at VR = 10 V. 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
239
HSD278, HSC278
101 100 10-1 10 10 10
-2 -3 -4
10-4
Ta = 75C Ta = 25C
10-5
Ta = 75C
10-6 Ta = 25C 10-7
10-5 10-6 10-7 10-8 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
10-8 0 5 10 15 20 Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f=1MHz 10
Capacitance C (pF)
1.0
0.1 0.1
10
240
RKD750KP, HSL285, HSC285, HSU285

Features
Low forward voltage, Low capacitance and High detection sensitivity. Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKD750KP)

RKD750KP R
HSL285KRF
HSC285TRF, HSC285KRF
HSU285TRF
Cathode mark Mark
Cathode mark Mark
C4
1. Cathode 2. Anode

(Ta = 25C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 2 5 125 55 to +125 Unit V mA C C
(Ta = 25C)
Item Forward voltage Capacitance ESD-Capability *1 Symbol VF1 VF2 C Min 10 Typ 0.3 Max 0.15 0.27 Unit V pF V Test Condition IF = 0.1 mA IF = 1 mA VR = 0.5 V, f = 1 MHz C = 200 pF, RL = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR 100 A at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package. 3. In the EFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use
S6
241
RKD750KP, HSL285, HSC285, HSU285
102 102
103
103
Ta = 75C
104
104
Ta = 25C
105
105
106
0.1
0.2
0.3
0.4
0.5
106
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
10
242
HSD88, HSC88, HSU88

Silicon Schottky Barrier Diode for Detector, Mixer
Features
Low capacitance. (C = 0.8 pF max) Low forward voltage.

HSD88KRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) KRF (8,000 pcs / reel) HSC88TRF, HSC88KRF Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel) HSU88TRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel)
Cathode mark Mark 1
S3
1. Cathode 2. Anode
S3

(Ta = 25C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 15 125 55 to +125 Unit V mA C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance ESD-Capability *1 Symbol VF1 VF2 IR1 IR2 C Min 0.350 0.500 30 Typ Max 0.420 0.580 0.2 10 0.80 Unit V A pF Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz C = 200 pF, Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 0.4 A at VR = 2 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package.
243
HSD88, HSC88, HSU88
10-2 10-6
Ta= 75C
(A)
10-3
10-7
Ta= 50C
Forward current IF
10-4
Ta= 75C
10-8
Ta= 25C
10-5
Ta= 50C Ta= 25C Ta= 0C Ta= - 25C
Ta= 0C
10-9
Ta= - 25C
10-6
0.2
0.4
0.6
0.8
10-10 0
10
Forward voltage VR (V) Fig.1 Forward current vs. Forward voltage
f=1MHz
10
(pF) Capacitance C
1.0
0.1 0.1
10
244
RKD700KL, RKD700KK, RKD700KJ

Silicon Schottky Barrier Diode for Backflow prevention
Features
Low reverse current, Low capacitance.

RKD700KL R Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) Cathode mark Mark 1 2 1. Cathode 2. Anode RKD700KK R Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) R (8,000 pcs / reel)
Cathode mark
RKD700KJ P, RKD700KJ R Package Name : UFP Package Code : PWSF0002ZA-A Taping Abbreviation (Quantity)
P (4,000 pcs / reel) R (8,000 pcs / reel)
Mark 1
S7
C5
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: 10 ms Sine wave 1 pulse Symbol VRRM VR IFSM * IO Tj Tstg Value 30 30 200 50 125 55 to +125 Unit V V mA mA C C
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 VF3 IR1 IR2 C Min Typ 0.11 Max 0.14 0.33 0.43 45 1 2.8 Unit V Test Condition IF = 1 A IF = 1 mA IF = 10 mA VR = 3 V VR = 30 V VR = 1 V, f = 1 MHz
Reverse current Capacitance
nA A pF
Note: In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use..
245
RKD700KL, RKD700KK, RKD700KJ
101 10
2
10-4 Ta=75C 10-5 Pulse test
103 10
4
Ta=25C
Ta=75C
10-6
105 106 107 108 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
10-7
Ta=25C
10-8
10
20
30
40
f=1MHz
10
Capacitance C (pF)
1.0
0.1 0.1 1.0 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage 10
246
RKD702KP, RKD702KL
Features
Low Power consumption (Low reverse leak current) and high speed (Low capacitance). Halogen free, Environmental friendly Package include Conformity to RoHS Directive.

RKD702KPR
RKD702KLR RKD702KL-NR(Halogen-free type)

Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) Cathode mark

(Ta = 25C)
Item Repetitive peak reverse voltage Non-Repetitive Peak forward surge current Forward current Junction temperature Storage temperature Note: 10 ms Sine Wave 1 pulse Symbol VRRM IFSM * IF Tj Tstg Value 30 200 50 125 55 to +125 Unit V mA mA C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Note: Symbol VF1 VF2 IR1 IR2 C Min Typ Max 0.35 0.40 100 250 2.50 Unit V Test Condition IF = 1 mA IF = 5 mA VR = 20 V VR = 30 V VR = 1 V, f = 1 MHz
V
nA nA pF
Please do not use the soldering iron due to avoid high stress to the MP6 package.
247
RKD702KP, RKD702KL
10-1 10-2 Ta=75C Ta=25C 10
-6
10-5 Pulse test Ta=75C
10-4 10-5 10-6 10-7 10-8 0
10-3
10-7 Ta=25C
10-8
0.1
0.2
0.3
0.4
0.5
0.6
10-9 0
10
20
30
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 10 f = 1MHz
Capacitance C (pF)
1.0
0.1 0.1
10
248
RKD703KP, RKD703KL
Features
Low Power consumption (Low reverse leak current) and high speed (Low capacitance). Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKD703KP) We can support the lineup of environmental friendly halogen free type on your demand. (RKD703KL)

RKD703KPR
RKD703KLR RKD703KL-NR(Halogen-free type)

Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) Cathode mark

(Ta = 25C)
Item Repetitive peak reverse voltage Forward current Non-Repetitive Peak forward surge current Junction temperature Storage temperature Note: 10 ms Sine Wave 1 pulse Symbol VRRM IF IFSM * Tj Tstg Value 30 50 200 125 55 to +125 Unit V mA mA C C
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 VF3 IR1 IR2 C Min Typ Max 0.25 0.30 0.35 6 50 5 Unit V Test Condition IF = 1 mA IF = 5 mA IF = 20 mA VR = 10 V VR = 30 V VR = 1 V, f = 1 MHz
V V
A A pF
Reverse current Capacitance
Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the llead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
249
RKD703KP, RKD703KL
10-1 Pulse test 10-2
10-2
Pulse test
10-3 Ta=75C
Ta=50C
10-3 10-4 10-5 10-6 10-7 10-8 0
10-4
Ta=75C Ta=50C
Ta=25C
10
-5
Ta=25C
10-6 10-7
0.1
0.2
0.3
0.4
0.5
0.6
10-80
10
15
20
25
30
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 10 f = 1MHz
Capacitance C (pF)
1.0
0.1 0.1
10
250
RKD751KP
Features
High forward current, Low capacitance. Halogen free, Environmental friendly Package include Conformity to RoHS Directive.

RKD751KPR

(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VRRM VR IO Tj Tstg Value 5 3 30 125 55 to +125 Unit V V mA C C
(Ta = 25C)
Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability *1 Symbol VR IR IF C Min 3.0 35 30 Typ Max 50 1.0 Unit V A mA pF V Test Condition IR = 1 mA VR = 0.5 V VF = 0.5 V VR = 0.5 V, f = 1 MHz C = 200 pF, RL = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 A at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.
251
RKD751KP
101 102
102
Ta = 75C
103
Ta = 75C
103
Ta = 25C
104
Ta = 25C
104
105
105 0
0.1
0.2
0.3
0.4
0.5
106
5.0
f=1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
10
252
HSM276AS, HSM276ASR
Features
High forward current, Low capacitance. HSM276AS and HSM276ASR which is interconnected in series configuration is designed for balanced mixer use.

HSM276ASTR ,HSM276ASRTR Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) HSM276AS
3
HSM276ASR
3
1. Anode 1 2. Cathode 2 3. Cathode 1 Anode 2

1
S19
(Top view)
S20
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device Symbol VRRM VR IO *1 Tj Tstg Value 5 3 30 125 55 to +125 Unit V V mA C C
(Ta = 25C)
Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability *2 Symbol VR IR IF C C Min 3.0 35 30 Typ Max 50 0.90 0.10 Unit V A mA pF pF V Test Condition IR = 1 mA VR = 0.5 V VF = 0.5V VR = 0.5 V, f = 1 MHz VR = 0.5 V, f = 1 MHz C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
253
HSM276AS, HSM276ASR
101 102
102
103
103
Ta = 75C
104
Ta = 75C
104
Ta = 25C
105
Ta = 25C
105
1.0
106
5.0
f=1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
10
254
HSM276S, HSM276SR
Features
High forward current, Low capacitance. HSM276S and HSM276SR which is interconnected in series configuration is designed for balanced mixer use.

HSM276STR ,HSM276SRTR Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel)
HSM276S
3
HSM276SR
3

1
C2
(Top view)
C9
(Top view)

(Ta = 25C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device Symbol VR *1 IO Tj Tstg Value 3 30 125 55 to +125 Unit V mA C C
(Ta = 25C)
Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability *2 Symbol VR IR IF C C Min 3.0 35 30 Typ Max 50 0.90 0.10 Unit V A mA pF pF V IR = 1 mA VR = 0.5 V VF = 0.5V VR = 0.5 V, f = 1 MHz VR = 0.5 V, f = 1 MHz C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse. Test Condition
255
HSM276S, HSM276SR
101 102
102
103
103
Ta = 75C
104
Ta = 75C
104
Ta = 25C
105
Ta = 25C
105
1.0
106
5.0
f=1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
10
256
HSM88AS, HSM88ASR, HSM88WA, HSM88WK

Features
Proof against high voltage.

HSM88ASTR ,HSM88ASRTR, HSM88WATR, HSM88WKTR Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) HSM88AS
3 Outline
HSM88ASR
3
HSM88WA
3
HSM88WK
3
1. Cathode 2 2. Anode 1 3. Cathode 1 1 Anode 2

2 1 2 1
1. Anode 2. Anode 3 Cathode
C1
(Top view)
C3
(Top view)
C7
(Top view)
C4
(Top view)

(Ta = 25C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device. Symbol VR IO *1 Tj Tstg Value 10 15 125 55 to +125 Unit V mA C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Capacitance deviation Forward voltage deviation ESD-Capability *2 Symbol VF1 VF2 IR1 IR2 C C VF Min 0.35 0.50 30 Typ Max 0.42 0.58 0.2 10 0.85 0.10 10 Unit V Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
V
A A pF pF mV V
Notes: 1. Per one device 2. Failure criterion ; IR 0.4 A at VR = 2 V 257
HSM88AS, HSM88ASR, HSM88WA, HSM88WK
102 103 105
105 10
6

0 0.2 0.4 0.6 0.8 1.0
104
106
107
107 108 109
108
109
10
15
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
10
258
HRB0103A
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching, Rectifying
Features
Low forward voltage drop and suitable for high efficiency forward current.

HRB0103ATR Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel)
3 3
E1
2 1 2 1
1. NC 2. Anode 3. Cathode
(Top view)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See Fig.5. 2. 10 ms sine wave 1 pulse. Symbol VRRM IO*1 IFSM *2 Tj Tstg Value 30 100 3 125 55 to +125 Unit V mA A C C
(Ta = 25C)
Item Forward voltage Reverse current Symbol VF IR Min Typ Max 0.44 50 Unit V A Test Condition IF = 100 mA VR = 30 V
259
HRB0103A
102 Pulse test 103 103
102 Pulse test
104 105 106 107 10

8
104
105
106
109
0.1
0.2
0.3
0.4
0.5
107
10
20
30
40
50

VR is two device total
20h15w0.8t
0.8
0.08
20h15w0.8t
0.8
0.08
D=1/6
0.07
3.0
0.07
3.0
DC D=5/6 D=2/3 D=1/2 sin wave
0.06 0.05 0.04 0.03 0.02
2.0
1.5
Unit: mm
D=1/2 DC
0.05
0
1.5
Unit: mm
0.04 0.03 0.02 0.01 0 0
VR
tp T D= tp T
Io tp T D= tp T
0.01 0 0 20 40 60
80
100 120
10
2.0
sin wave D=1/3
0.06
15
20
25
30
Average rectified current Io (mA) Fig3. Forward power dissipation vs. Average rectified current
Peak reverse voltage VRM (V) Fig4. Forward power dissipation vs. Peak reverse voltage
260
HRB0103A
120
Average rectified current IO (mA)
100
DC
80 60 40
3.0
D=1/6 D=1/3
20hx15wx0.8t
1.5
0.8
0
1.5
Io tp T D= tp T
20 0
1.5
Unit: mm
sin wave D=1/2
VR = 30V
25
50
75
100 125 150
261
HRB0103B
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
Features
Low forward voltage drop and suitable for high efficiency forward current.

HRB0103BTR Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel)
3 3
E2
2 1 2 1
1. Cathode 2. Anode 3. Cathode Anode
(Top view)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Per one device. 2. See Fig.5, Two device total. 3. 10 ms sine wave 1 pulse. Symbol VRRM IO *2 IFSM *3 Tj Tstg Value 30 100 3 125 55 to +125 Unit V mA A C C
(Ta = 25C)
Item Forward voltage Reverse current Symbol VF IR Min Typ Max 0.44 50 Unit V A Test Condition IF = 100 mA VR = 30 V
262
HRB0103B
102 Pulse test 103 103
102 Pulse test
104 105 106 107 10

8
104
105
106
109
0.1
0.2
0.3
0.4
0.5
107
10
20
30
40
50

VR is two device total
20h15w0.8t
0.8
0.08
20h15w0.8t
0.8
0.08
D=1/6
0.07
3.0
0.07
3.0
DC D=5/6 D=2/3 D=1/2 sin wave
0.06 0.05 0.04 0.03 0.02
2.0
1.5
Unit: mm
D=1/2 DC
0.05
0
1.5
Unit: mm
0.04 0.03 0.02 0.01 0 0
VR
tp T D= tp T
Io tp T D= tp T
0.01 0 0 20 40 60
80
100 120
10
2.0
sin wave D=1/3
0.06
15
20
25
30
Average rectified current Io (mA) Fig3. Forward power dissipation vs. Average rectified current
Peak reverse voltage VRM (V) Fig4. Forward power dissipation vs. Peak reverse voltage
263
HRB0103B
Two device total
120
100
DC
80 60 40
3.0
D=1/6 D=1/3
20hx15wx0.8t
1.5
0.8
0
1.5
Io tp T D= tp T
20 0
1.5
Unit: mm
sin wave D=1/2
VR = 30V
25
50
75
100 125 150
264
HRB0502A
Silicon Schottky Barrier Diode for Rectifying
Features
Low forward voltage drop and suitable for high efficiency rectifying.

HRB0502ATR Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel)
3 3
E3
2 1 2 1
1.NC 2. Anode 3. Cathode
(Top view)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.6 2. 10 ms sine wave 1 pulse. Symbol VRRM IF *1 IFSM *2 Tj Tstg Value 20 500 5 125 55 to +125 Unit V mA A C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Thermal resistance Note: Polyimide board
20h15w0.8t
1.5
0.8
Symbol VF IR C Rth(j-a)
Min
Typ 120 450
Max 0.4 200
Unit V A pF C/W
Test Condition IF = 500 mA VR = 20 V VR = 0 V, f = 1 MHz Polyimide board *1
3.0
2.0
Unit: mm
1.5
265
HRB0502A
10 Pulse test 1.0 102 101 Pulse test
Ta = 75C
101
Ta = 25C
103
Ta = 75C
102
104
Ta = 25C
103
105
104
0.2
0.4
0.6
0.8
1.0
106
10
15
20
25
100 f = 1MHz Pulse test
Capacitance C (pF)
10
1.0 1.0
40
266
HRB0502A
0.4
0
2.5
0
Io tp T D= tp T
D=1/6 D=1/3 Sin wave D=1/2
VR
tp T D= tp T
2.0
0.3
D=5/6 D=2/3 D=1/2
Ta = 25C
Tj =125C
1.5
0.2
DC
1.0 Sin wave 0.5
0.1
0.1
0.2
0.3
0.4
0.5
10
15
20
25
0.6 VR = 3V
Tj = 125C
Rth(j-a) = 450C/W 0.5 0.4 0.3 0.2 0.1 0 25 D=1/6 D=1/2 Sin wave D=1/3 DC
Io tp T tp D= T
25
50
75
100 125
267
RKR0202AQE
Features

RKR0202AQEP Package Name : CMPAK Package Code: PTSP0003ZB-A Taping Abbreviation (Quantity) P(3,000 pcs / reel)
3 3
E9
2 1 2 1
1. Anode 2. Anode 3. Cathode (Top view)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Two device total 2. See from Fig.4 to Fig.6 3. 10ms sine wave 1 pulse Symbol VRMM IO *1 *2 IFSM *3 Tj Tstg Value 20 200 2 125 55 to +125 Unit V mA A C C
(Ta = 25C)
Item Forward voltage Reverse current Thermal resistance Symbol VF1 VF2 IR Rth(j-a) Min Typ 550 Max 0.30 0.40 50 Unit V V A C/W Test Condition IF = 10 mA IF = 100 mA VR = 20 V Polyimide board *2
Notes: 1. Per one device 2. Polyimide board

20h15w0.8t
0.8 2.0
1.5
3.0
Unit: mm
1.5
268
RKR0202AQE
1.0 10
1
Pulse test
103
Pulse test
102 103 104 105 106 107
104
105
0.1
0.2
0.3
0.4
0.5
0.6
106 0
10
15
20
25
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 100
f = 1MHz
Pulse test
10
0.1
1.0
10
100
Reverse voltage VR (V) Fig3. Capacitance vs. Reverse oltage
269
RKR0202AQE
0.08
D=1/6 0A t t D= T D=1/3 Sin
0.2
0V t
0.06
T Ta = 25C
0.15
T Tj = 125C
t D= T
D=5/6
0.04
D=1/2 DC
D=2/3
0.1
D=1/2 Sin
0.02
0.05
0.05
0.1
0.15
0 0
10
15
20
25
Forward current IF (A) Fig4. Forward power dissipation vs. Forward current
Reverse voltage VR (V) Fig5. Reverse power dissipation vs. Reverse voltage
0.12
0.10
Sin(=180) DC
0.08
D=1/2 D=1/3
0.06
D=1/6
0.04 0.02 0 -25

VR=10V Tj =125C Rth(j-a)=550C/W Per one device
25
50
75
100 125
270
HSB0104YP
Features
Can be used for protection of signal-bus lines.

HSB0104YPTR, HSB0104YPTL Package Name : CMPAK- 4 Package Code: PTSP0004ZB-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 4 3 4 3
E4
1 (Top View) 2 1 (Top View) 2
1. Anode 2. Anode 3. Cathode 4. Cathode

(Ta = 25C)
Item Reverse peak reverse voltage Forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Per one device. 2. 10ms sine wave 1 pulse. Symbol VRRM IF IFSM *2 Tj Tstg Value 40 100 3 125 55 to +125 Unit V mA A C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Symbol VF IR C Min Typ 20 Max 0.58 50 Unit V A pF Test Condition IF = 100 mA VR = 40 V VR = 0 V, f = 1 MHz
271
HSB0104YP
1.0 Pulse test 10
1
100 Pulse test
Reverse current IR (Am)

0 0.2 0.4 0.6 0.8 1.0
10
10
103 104
1.0
101
105 106 102
10
20
30
40
50
100 f=1MHz
Capacitance C (pF)
10
1.0 1.0
40
272
HRC0103A
Features

HRC0103ATRF, HRC0103AKRF
Package Name : UFP Package Code: PWSF0002ZA-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
Cathode mark Mark 1
S1
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse. Symbol VRRM *1 IO *1 IFSM *2 Tj Tstg Value 30 100 3 125 55 to +125 Unit V mA V C C
(Ta = 25C)
Item Forward voltage Reverse current Thermal resistance Symbol VF IR Rth(j-a) Min Typ 500 Max 0.44 50 Unit V A C/W Test Condition IF = 100 mA VR = 30 V Polyimide board *1
Notes: 1. Polyimide board

20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
273
HRC0103A
1.0 Pulse test 101 103 102 Pulse test
102
Ta = 25C
Ta = 75C
104
Ta = 75C
103
105
Ta = 25C
10
105
106
106
0.2
0.4
0.6
0.8
1.0
107
10
20
30
40
50
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 0.10 0.6
0V 0A
0.08
t T t D= T D=1/6 sin(=180) D=1/3 D=1/2 DC
0.5
T Tj = 125C
t t D= T
Ta = 25C
0.4
0.06
D=5/6
0.3
D=2/3 D=1/2 sin(=180)
0.04
0.2
0.02
0.1
0.02 0.04
0.06 0.08
0.10 0.12
10
20
30
40
274
HRC0103A
0.12
0.10
VR=VRRM/2 Tj =125C Rth(j-a)=500C/W DC
0.08
D=1/2 sin(=180) D=1/3 D=1/6
0.06
0.04
0.02
0 -25
25
50
75
100
125
275
HRC0103C
Features
Low reverse voltage drop and suitable for high efficiency reverse current.

HRC0103CTRF, HRC0103CKRF
Cathode mark Mark 1
S9
1. Cathode 2. Anode

(Ta = 25C)
Item Peak reverse voltage Reverse voltage Average rectified current Peak forward surge current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse. Symbol VRM *1 VR IO *1 IFM IFSM *2 Tj Tstg Value 30 30 100 300 1 125 55 to +125 Unit V V mA mA A C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF1 VF2 IR1 IR2 C Rth(j-a) Min Typ 550 Max 0.40 0.60 0.1 0.2 8.0 Unit V V A pF C/W Test Condition IF = 10 mA IF = 100 mA VR = 5 V VR = 10 V VR = 0.5 V, f = 1 MHz Polyimide board *1

20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
276
HRC0103C
1.0 Pulse test 101
Ta = 75C
103 Pulse test 104

Ta = 75C
102
10
103
Ta = 25C
Ta = 50C
106
Ta = 25C
10
105
10
106
0.2
0.4
0.6
0.8
1.0
108
10
20
30
40
50
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 0.12
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 0.03
0V
D = 5/6
0.1
0A
t T t D= T D = 1/6 sin D = 1/3 D = 1/2 DC
0.025
T Tj = 125C
t t D= T D = 2/3
0.08
Ta = 25C
0.02
0.06
0.015
D = 1/2
0.04
0.01
sin
0.02
0.005
0.05
0.10
0.15
10
20
30
40
277
HRC0103C
0.12
0.1
VR = VRM/2 Tj =125C Rth(j-a) = 550C/W
DC
0.08
D = 1/2 sin( = 180)
0.06
D = 1/3 D = 1/6
0.04
0.02
0 25
25
50
75
100
125
278
HRC0201A
Features

HRC0201ATRF, HRC0201AKRF
Cathode mark Mark 1
C3
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol VRRM *1 VR IO *1 IFM IFSM *1 Tj Tstg Value 15 15 200 300 1 125 55 to +125 Unit V V mA mA A C C
Notes: 1. See from Fig.4 to Fig.6, with polyimide board. 2. 10 ms sine wave 1 pulse.
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF IR C Rth(j-a) Min Typ 18 600 Max 0.39 50 Unit V A pF C/W Test Condition IF = 200 mA VR = 6 V VR = 1 V, f = 1 MHz Polyimide board *1

20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
279
HRC0201A
1.0
Pulse test
101
Pulse test
101
Ta = 75C
102
102
Ta = 25C
103
Ta = 75C
103
104
Ta = 25C
104
10
105
106
0.6
106
5 10 15 Reverse voltage VR (V)
20
f = 1MHz Pulse test 100

Capacitance C (pF)
10
1.0 0.1
1.0 10 Reverse voltage VR (V)
100
280
HRC0201A
0.15
0A
1.4 1.2
0V t T Tj = 125C
D=5/6
t T
t D= T
D=1/6
t D= T D=2/3
Ta= 25C
0.10
D=1/3 sin(=180) D=1/2 DC
1.0 0.8 0.6 0.4 0.2 0 0
D=1/2
sin(=180)
0.05
0 0 0.05 0.10 0.15 0.20 0.25 0.30 Forward current IF (A) Fig.4 Forward power dissipation vs. Forward current
10
15
20
25
30
0.30 VR = VRRM/3 Tj = 125C Rth(j-a) = 600C/W
0.25
0.20
sin(=180)
DC
0.15
0.10
D=1/2
0.05
D=1/3 D=1/6
0 25
25
50
75
100
125
281
HRC0203B
Features

HRC0203BTRF, HRC0203BKRF
Cathode mark Mark 1
S2
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse. Symbol VRRM *1 IO *1 IFSM *2 Tj Tstg Value 30 200 3 125 55 to +125 Unit V mA A C C
(Ta = 25C)
Item Symbol Forward voltage VF Reverse current IR Thermal resistance Rth(j-a) Notes: 1. Polyimide board Min Typ 500 Max 0.52 10 Unit V A C/W Test Condition IF = 200 mA VR = 30 V Polyimide board *1
20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
282
HRC0203B
1.0 Pulse test 101
Ta = 75C
102 Pulse test 103
10
104
Ta = 75C
103
Ta = 25C
105
Ta = 25C
10
105
106
106
0.2
0.4
0.6
0.8
1.0
107
10
20
30
40
50
0.30
0.6
0V
0.25
0A
t T t D= T D=1/6 D=1/3
0.5
T Tj = 125C
t t D= T
Ta = 25C
0.20
0.4
D=5/6
0.15
sin(=180) D=1/2
0.3
D=2/3 D=1/2 sin(=180)
0.10
DC
0.2
0.05
0.1
0.05
0.10
0.15
0.20
0.25
10
20
30
40
283
HRC0203B
0.25
VR=VRRM/2 Tj =125C Rth(j-a)=500C/W
0.20 D=1/2 0.15

sin(=180)
DC
D=1/3 D=1/6 0.10
0.05
0 -50
-25
25
50
75
100 125
284
HRC0203C
Features

HRC0203CTRF, HRC0203CKRF
Cathode mark Mark 1
S8
1. Cathode 2. Anode

(Ta = 25C)
Item Symbol Repetitive peak reverse voltage VRRM *1 Average rectified current IO *1 Non-Repetitive peak forward surge current IFSM *2 Junction temperature Tj Storage temperature Tstg Notes: 1. See from Fig.3 to Fig.5, with polyimide board. 2. 10 ms sine wave 1 pulse. Value 30 200 2 125 55 to +125 Unit V mA A C C
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 Reverse current IR Thermal resistance Rth(j-a) Note: 1. Polyimide board Min Typ 550 Max 0.25 0.45 30 Unit V A C/W Test Condition IF = 5 mA IF = 200 mA VR = 10 V Polyimide board *1
20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
285
HRC0203C
1.0
Pulse test
103
Ta = 75C Pulse test
101
104
102
Ta = 75C
105
Ta = 25C
103
Ta = 25C Ta = 25C
106
Ta = 25C
10
105
10
106
0.2
0.4
0.6
0.8
1.0
108
10
20
30
40
50
0.30
0A
0.6
0V t T Ta = 25C
0.25
t D= T
0.5
T Tj = 125C
t D= T
D=5/6
0.20
D=1/6
0.4
D=2/3
0.15
D=1/3 sin(=180) D=1/2 DC
0.3
D=1/2
0.10
0.2
sin(=180)
0.05
0.1
0.05
0.10
0.15
0.20
0.25
10
20
30
40
286
HRC0203C
0.30
0.25 0.20 0.15 0.10 0.05 0 25

D=1/3 D=1/6
VR = VRRM/3 Tj = 125C Rth(j-a) = 550C/W
sin(=180) D=1/2 DC
25
50
75
100 125 150
Capacitance C (pF)
10
1.0 0.1
10
287
RKR0303AKJ
Features

RKR0303AKJP, RKR0303AKJR
Package Name : UFP Package Code: PWSF0002ZA-A Taping Abbreviation (Quantity) P (4,000 pcs / reel) R (8,000 pcs / reel)
Cathode mark Mark 1
C6
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.6. 2. 10 ms sine wave 1 pulse. Symbol VRRM VR IF *1 IFSM *2 Tj Tstg Value 30 30 0.3 1 125 55 to +125 Unit V V A A C C
(Ta = 25C)
Item Forward voltage Reverse current Thermal resistance Note: Symbol VF IR Rth(j-a) Min Typ 600 Max 0.42 200 Unit V A C/W Test Condition IF = 300 mA VR = 30 V Polyimide board *1
1. Polyimide board
20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
288
RKR0303AKJ
1.0 Pulse test 101
101
Pulse test
Ta = 75C Ta = 25C
102
Ta = 75C
102 103
103
Ta = 75C
104
104
Ta = 25C
105 106 0
105
0.1
0.2
0.3
0.4
0.5
0.6
106
10
15
20
25
30

(pF) Capacitance C
10
1.0 0.1
1.0
10
100
289
RKR0303AKJ
0.25 D=1/6
0A
1.2
0V D=5/6 t T Tj = 125C t D= T
0.2
t T
t D= T
D=1/3 Sin D=1/2
1.0
Ta = 25C
D=2/3
0.8
0.15 DC 0.1
D=1/2
0.6
sin
0.4
0.05
0.2
0 0
0.1
0.2
0.3
0.4
0 0
10
20
30
40
0.35
VR = VRRM/3 Tj = 125C Rth(j-a) = 600C/W DC D=1/2
0.30
0.25 0.20
0.15
D=1/6 D=1/3 sin(=180)
0.10
0.05 0 25
25
50
75
100
125
290
RKR0303BKJ
Features
Low reverse current drop and suitable for high efficiency rectifying.

RKR0303BKJP, RKR0303BKJR Package Name : UFP Package Code: PWSF0002ZA-A Taping Abbreviation (Quantity) 1 P (4,000 pcs / reel) R (8,000 pcs / reel) Cathode mark Mark
C7
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.6. 2. 10 ms sine wave 1 pulse. Symbol VRRM VR IF *1 IFSM *2 Tj Tstg Value 30 30 0.3 1 150 55 to +150 Unit V V A A C C
(Ta = 25C)
1. Polyimide board
20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
291
RKR0303BKJ
1.0 101
Ta = 75C
Pulse test
103 Pulse test 104

Ta = 75C
10
Ta = 25C
103 104 105 106 107 108 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
105
Ta = 25C
10
107
108 0
10
15
20
25
30

(pF) Capacitance C
10
1.0 0.1
1.0
10
100
292
RKR0303BKJ
0.25 D=1/6 Sin D=1/3 D=1/2 0.8
0V D=5/6 t t D= T
0A
0.2
t T
t D= T
0.7 0.6 0.5

D=1/2 T Tj = 150C D=2/3
Ta = 25C
0.15
DC
0.4 0.3 0.2 0.1

sin
0.1
0.05
0 0
0.1
0.2
0.3
0.4
0 0
10
20
30
40
0.35
0.3
0.25 0.2 0.15

D=1/6
DC
sin(=180) D=1/2
0.1 0.05
D=1/3
0 25
25
50
75
100 125 150
293
HRD0103C, HRU0103C
Features
Low reverse voltage drop and suitable for high efficiency reverse current. Lineup of environmental friendly Halogen free type (HRD0103C-N)

HRD0103CKRF HRD0103C-NKRF(Halogen-free type)
HRU0103CTRF
Cathode mark Mark 1
Cathode mark Mark
S6
1. Cathode 2. Anode
S8
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)

20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
2. In the SFP package, some lead is exposed because the tip of the llead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use. 294
HRD0103C, HRU0103C
1.0 Pulse test 101
Ta = 75C
103 Pulse test 104

102
105
103
Ta = 25C
Ta = 75C Ta = 50C
106
10
10
107
Ta = 25C
106
0.2
0.4
0.6
0.8
1.0
108
10
15
20
25
30
0V D = 5/6 t D= T D = 2/3
0.1
0A
t T t D= T D = 1/6 sin D = 1/3 D = 1/2 DC
0.025
T Tj = 125C
0.08
Ta = 25C
0.020
0.06
0.015
D = 1/2
0.04
0.01
sin
0.02
0.005
0.05
0.10
0.15
10
20
30
40
295
HRD0103C, HRU0103C
0.12
0.1
VR = VRM/2 Tj =125C Rth(j-a) = 600C/W DC
0.08
D = 1/2 sin( = 180)
0.06
D = 1/3
0.04
D = 1/6
0.02
0 25
25
50
75
100
125
296
HRD0203C
Features

HRD0203CKRF
Cathode mark Mark 1
S5
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol VRRM *1 IO *1 IFSM *2 Tj Tstg Value 30 200 2 125 55 to +125 Unit V mA A C C
Notes: 1. See from Fig.3 to Fig.5, with polyimide board. 2. 10 ms sine wave 1 pulse.
(Ta = 25C)
Item Forward voltage Reverse current Thermal resistance Note: Symbol VF1 VF2 IR Rth(j-a) Min Typ 600 Max 0.25 0.45 30 Unit V A C/W Test Condition IF = 5 mA IF = 200 mA VR = 10 V Polyimide board *1
1. Polyimide board
20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
297
HRD0203C
1.0
Pulse test
103
Ta = 75C Pulse test
101
104
102
Ta = 75C
105
Ta = 25C
103
Ta = 25C Ta = 25C
106
Ta = 25C
10
105
10
106
1.0
108
50
Fig.1 Forward current vs. Forward voltage 0.30

0A
Fig.2 Reverse current vs. Reverse voltage 0.6

0V
0.25
t T
t D= T
0.5
T Tj = 125C
t D= T
Tj = 25C
D=5/6
0.20
D=1/6
0.4
D=2/3
0.15
D=1/3 sin(=180) D=1/2 DC
0.3
D=1/2
0.10
0.2
sin(=180)
0.05
0.1
0.05 0.10 0.15 0.20 Forward current IF (A)
0.25
40
Fig3. Forward power dissipation vs. Forward current
Fig4. Reverse power dissipation vs. Reverse voltage
298
HRD0203C
0.30
0.25 0.20 0.15 0.10 0.05 0

D=1/3 D=1/6
sin(=180) D=1/2 DC
25
0 25 50 75 100 125 150 Ambient temperature Ta (C)
Fig.5 Average rectified current vs. Ambient temperature
Capacitance C (pF)
10
1.0 0.1
10
299
HRL0103C
Features
Low reverse voltage drop and suitable for high efficiency reverse current. Lineup of environmental friendly Halogen free type (HRL0103C-N)

HRL0103CKRF HRL0103C-NKRF(Halogen-free type)

(Ta = 25C)
(Ta = 25C)

20h15w0.8t
0.3
3.0
0.5
Unit: mm
1.0
2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature. 300
HRL0103C
1.0 Pulse test 101
Ta = 75C
103 Pulse test 104

102
105
103
Ta = 25C
Ta = 75C Ta = 50C
106
10
10
107
Ta = 25C
106
0.2
0.4
0.6
0.8
1.0
108
10
15
20
25
30
0A
0V
0.10
t T t D= T D=1/6 sin(=180) D=1/3 D=1/2 DC
0.025
T Tj = 125C
t t D= T
D=5/6
Tj = 25C
0.08
0.020
D=1/3
0.06
0.015
D=1/2
0.04
0.010
sin(=180)
0.02
0.005
0.05
0.10
0.15
10
20
30
40
301
HRL0103C
120
100
VR=VRRM/2 Tj =125C Rth(ja)=800C/W DC
80
D=1/2 sin(=180)
60
D=1/3 D=1/6
40
20
0 25
25
50
75
100
125
302
HRW0202A
Features

HRW0202ATR, HRW0202ATL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3
S17
2 1
2 (Top View)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Two device total. 2. See from Fig.4 to Fig.7 3. 10ms sine wave 1 pulse. Symbol VRMM *1 IO *2 IFSM *3 Tj Tstg Value 20 200 3 125 55 to +125 Unit V mA A C C
(Ta = 25C)

20h15w0.8t
1.5
3.0
1.5
1.5
0.8
Unit: mm
303
HRW0202A
1.0 Pulse test 10
1
103 Pulse test 104 Ta = 75C

Ta = 75C
102
105
Ta = 25C
10
10
Ta = 25C
106
105
107
106
0.1
0.2
0.3
0.4
0.5
0.6
108
10
15
20
25
Capacitance C (pF)
10
1.0 1.0
40
Fig3. Capacitance vs. Reverse voltage
304
HRW0202A
0.08
D=1/6 0A t T Ta= 25C t D= T sin(=180) D=1/3 D=1/2 DC
0.25
0V
0.20
T Tj = 125C
t t D= T D=5/6 D=2/3 D=1/2 sin(=180)
0.06
0.15
0.04
0.10
0.02
0.05
0 0 0.02 0.04 0.06 0.08 0.1 Forward current IF (A) Fig4. Forward power dissipation vs. Forward current
10
15
20
25
0.12
0.25
0.10 DC 0.08 0.06 0.04 0.02 Tj =125C 0 -25

VR=VRRM/2 Rth(j-a)=350C/W Per one device sin(=180) D=1/2 D=1/3 D=1/6
0.20
sin(=180) D=1/2 D=1/3 D=1/6
DC
0.15
0.10 0.05 VR=VRRM/2
Tj =125C Rth(j-a)=350C/W Two device total
25
50
75
100 125
0 -25
25
50
75
100 125
305
HRW0202B
Features

HRW0202BTR, HRW0202BTL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3
S18
2 1
2 (Top View)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Two device total. 2. See from Fig.4 to Fig.7 3. 10ms sine wave 1 pulse. Symbol VRMM *2 IO *2 IFSM *3 Tj Tstg Value 20 200 3 125 55 to +125 Unit V mA A C C
(Ta = 25C)

20h15w0.8t
1.5
3.0
1.5
1.5
0.8
Unit: mm
306
HRW0202B
1.0 Pulse test 101 Ta = 75C
103 Pulse test 104

Ta = 75C
102
105
103 Ta = 25C 10
4
106
Ta = 25C
105
107
106
0.1
0.2
0.3
0.4
0.5
0.6
108
10
15
20
25
Capacitance C (pF)
10
1.0 1.0
40
Fig3. Capacitance vs. Reverse voltage
307
HRW0202B
0.08
0A t T Ta = 25C t D= T D=1/6 sin(=180) D=1/3 D=1/2 DC
0.06
0V t T t D= T
D=5/6
0.05 0.04 Tj = 125C 0.03
0.06
D=2/3
D=1/2 sin(=180)
0.04
0.02 0.01 0
0.02
0.02
0.04
0.06
0.08
0.10
10
15
20
25
0.12
0.25
0.10
sin(=180) DC
0.20
D=1/2 sin(=180) DC
0.08
D=1/2
0.15
D=1/3 D=1/6
0.06 0.04
D=1/3 D=1/6
0.10
0.02 Tj =125C 0 -25
VR=VRRM/2 Rth(j-a)=400C/W Per one device
0.05 VR=VRRM/2
25
50
75
100 125
0 -25
Tj =125C Rth(j-a)=400C/W Two device total
25
50
75
100 125
308
HRW0203A
Features

HRW0203ATR, HRW0203ATL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3 1. NC 2. Anode 3. Cathode
S5
2 1
2 (Top View)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol VRMM *1 IO *1 IFSM *2 Tj Tstg Value 30 200 2 125 55 to +125 Unit V mA A C C
Notes: 1. See from Fig.1 to Fig.5, with polyimide board. 2. 50 Hz sine wave 1 pulse.
(Ta = 25C)
309
HRW0203A
1.0
Tj = 25C Tj = 125C
102
101
10
103
103
0.2
0.4
0.6
0.8
104 1.0
100
0.20
0A
0.40
0V t D=5/6
t T t D= T
0.15
D=1/6
0.30
T Tj = 125C
Ta = 25C
t D= T
D=2/3
0.10
D=1/3 sin(q=180) D=1/2 DC
D=1/2
0.20
sin(q=180)
0.05
0.10
0.05
0.10
0.15
0.20
10
15
20
25
30
310
HRW0203A
0.30
0A
20hx15wx0.8t
0.25 0.20 0.15 0.10 0.05 0
D=
1.5
3.0
VR=VRRM/2, Tj =125C
1.5
Unit: mm
Rth=360C/W
D=1/3 D=1/6
DC sin(q=180) D=1/2
25 50 75 100 125 150 Ambient temperature Ta (C)
f=1MHz Pulse test 100

Capacitance C (pF)
10
1.0 0.1
10
1.5
0.8
t T
311
HRW0203B
Features

HRW0203BTR, HRW0203BTL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3
S21
2 1
2 (Top View)
(Top view)
1. Anode 2.NC 3. Cathode

(Ta = 25C)
Notes: 1. See from Fig.1 to Fig.5, with polyimide board 2. 50 Hz sine wave 1 pulse
(Ta = 25C)
312
HRW0203B
1.0
Tj = 25C Tj = 125C
102 101

0 0.2 0.4 0.6 0.8
103
10
103
104 1.0
100
0.20
0A
0.40
0V t
D=5/6
t T t D= T
0.15
D=1/6
0.30
T Tj = 125C
t D= T
D=2/3
Ta = 25C
0.10
D=1/3 sin(=180) D=1/2 DC
D=1/2
0.20
sin(=180)
0.05
0.10
0.05
0.10
0.15
0.20
10
15
20
25
30
313
HRW0203B
0.30
0A
20h15w0.8t
0.25 0.20
D=
1.5
3.0
VR=VRRM/2, Tj=125C
1.5
Unit: mm
0.15 0.10 0.05 0
Rth=360C/W
D=1/3 D=1/6
DC
sin(=180)
D=1/2 0 25 50 75 100 125 150 Ambient temperature Ta (C)

Capacitance C (pF)
10
1.0 0.1
10
314
1.5
0.8
t T
HRW0302A
Features

S11
2 1
2 (Top View)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.6. 2. 10ms sine wave 1 pulse. Symbol VRMM *1 IO *1 IFSM *2 Tj Tstg Value 20 300 3 125 55 to +125 Unit V mA A C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Thermal resistance Note: Symbol VF IR C Rth(j-a) Min Typ 340 Max 0.40 100 100 Unit V A pF C/W Test Condition IF = 300 mA VR = 20 V VR = 0 V, f = 1 MHz Polyimide board *1
1. Polyimide board
20h15w0.8t
1.5
3.0
1.5
1.5
0.8
Unit: mm
315
HRW0302A
10 Pulse test 1.0 101 Pulse test
102
10
Ta = 75C
102
Ta = 25C
103
Ta = 75C
104
Ta = 25C
103 104
10
105
0.2
0.4
0.6
0.8
1.0
106
10
15
20
25
Capacitance C (pF)
10
1.0 1.0
40
316
HRW0302A
0.25
0A
0.40
0.20
t T t D= T D=1/3 sin(=180) D=1/2 DC
D=1/6
0V t
0.30
T Tj = 125C
Ta = 25C
t D= T
D=5/6 D=2/3 D=1/2
0.15
0.20
0.10
0.10
sin(=180)
0.05
0.05 0.10 0.15 0.20 0.25 0.30 Forward current IF (A)
10
15
20
25
Fig.4 Forward power dissipation vs. Forward current
0.40
0.30
D=1/2 sin(=180) D=1/3 D=1/6
DC
0.20
0.10
0 -25
25
50
75
100 125
317
HRW0502A
Features

S10
2 1
2 (Top View)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.6. 2. 10ms sine wave 1 pulse. Symbol VRMM *1 IO *1 IFSM *2 Tj Tstg Value 20 500 5 125 55 to +125 Unit V mA A C C
(Ta = 25C)
20h15w0.8t
1.5
Min
Typ 120 340
Max 0.40 200
Unit V A pF C/W
3.0
1.5
1.5
0.8
Unit: mm
318
HRW0502A
Ta = 75C
101
Ta = 25C
103
Ta = 75C
102
104
Ta = 25C
103
105
104
0.2
0.4
0.6
0.8
1.0
106
10
15
20
25
Capacitance C (pF)
10
1.0 1.0
40
319
HRW0502A
0.4
0A t T Ta = 25C t D= T D=1/3 sin(=180) D=1/2
2.5
D=1/6
0V t T Tj = 125C t D= T
2.0
0.3
D=5/6
1.5
D=2/3 D=1/2
0.2
DC
1.0
sin(=180)
0.1
0.5
0.1
0.2
0.3
0.4
0.5
10
15
20
25
0.6 VR=VRRM/2
0.5 0.4 0.3
Tj =125C Rth(j-a)=340C/W
DC
sin(=180)
0.2
D=1/6
D=1/2 D=1/3
0.1 0 -25
25
50
75
100 125
320
HRW0503A
Features

S6
2 1
2 (Top View)
(Top view)

(Ta = 25C)
Notes: 1. See from Fig.1 to Fig.5, with polyimide board. 2. 50 Hz sine wave 1 pulse.
(Ta = 25C)
321
HRW0503A
1.0
Tj = 25C
101
Tj = 125C
101
102
102
103
0.2
0.4
0.6
0.8
103
10
15
20
25
30
0.40
0A t T Ta = 25C t D= T
D=1/6 sin(=180) D=1/3 D=1/2 DC
0.40
0V t
D=5/6
0.30
0.30
T Tj = 125C
t D= T
D=2/3
D=1/2
0.20
0.20
sin(=180)
0.10
0.10
0 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25 30 Forward current IF (A) Reverse voltage VR (V) Fig.4 Reverse power dissipation vs. Reverse voltage
322
HRW0503A
0.6
20h15w0.8t
0.5 0.4
sin(=180)
3.0
DC D=1/2
1.5
1.5
Unit: mm
0.3 0.2 0.1 0 -25

D=1/3 D=1/6
Rth=330C/W
0A t T D= t T
VR=VRRM/2, Tj =125C
25
50
75
100 125
Capacitance C (pF)
10
1.0 0.1
10
1.5
0.8
323
HRW0702A
Features

S15
2 1
2 (Top View)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Forward current Non-Repetitive peak forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.6. 2. 10ms sine wave 1 pulse. Symbol VRMM *1 IF *1 Value 20 700 1.4 5 125 55 to +125 Unit V mA A A C C
IFM IFSM *2
Tj Tstg
(Ta = 25C)
20h15w0.8t
1.5
Min
Typ 120 340
Max 0.43 200
Unit V A pF C/W
3.0
1.5
1.5
0.8
Unit: mm
324
HRW0702A
Ta = 75C
101
Ta = 25C
103
Ta = 75C
102
104
Ta = 25C
103
105
104
0.2
0.4
0.6
0.8
1.0
106
10
15
20
25
Capacitance C (pF)
10
1.0 1.0
40
325
HRW0702A
0.6 2.5
0.5 0A
D=1/6 t T t D= T D=1/3 sin(=180) D=1/2
0V t T Tj = 125C t D= T
2.0
D=5/6
0.4 Ta= 25C 0.3 0.2 0.1 0
1.5
D=2/3 D=1/2
DC
1.0
sin(=180)
0.5
0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward current IF (A)
10
15
20
25
0.8
0.6
DC
0.4
0.2
D=1/6
sin(=180) D=1/2 D=1/3
0 -25
25
50
75
100 125
326
HRW0703A
Features

S8
2 1
2 (Top View)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.7. 2. 50 Hz sine wave 1 pulse. Symbol VRMM *1 IF *1 IFSM *2 Tj Tstg Value 30 700 5 125 55 to +125 Unit V mA A C C
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF IR C Rth1(j-a) Rth2(j-a) Min Typ 150 390 290 Max 0.5 100 Unit V A pF C/W C/W Test Condition IF = 700 mA VR = 30 V VR = 0 V, f = 1 MHz Polyimide board *1 Ceramic board *2

20h15w0.8t
1.5
2. Ceramic board
20h15w0.65t
0.8
3.0
1.5
4.2
1.5
Unit: mm
2.0
2.0
Unit: mm
327
HRW0703A
10 Pulse test 102
101 Pulse test
1.0
Ta = 75C
103
Ta = 75C
Ta = 25C
104
101
105
Ta = 25C
102
106 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V)
10
20
30
40
50
Capacitance C (pF)
10
1.0 1.0
40
328
HRW0703A
0.80 1.6
0A t T Ta = 25C t D= T D=1/3 D=1/2 D=1/6
0V t D=5/6 t D= T
0.60
1.2
T Tj = 125C
D=2/3
0.40
sin(=180)
DC
0.8
D=1/2 sin(=180)
0.20
0.4
0.2
0.4
0.6
0.8
1.0
10
15
20
25
30
0.80
0.80
DC 0.60
VR=VRRM/2 Tj =125C Ceramic board
VR=VRRM/2 Tj =125C Polyimide board
0.60
DC
0.40
sin(=180)
0.40
sin(=180)
D=1/2
0.20
D=1/6 D=1/3
0.20
D=1/2 D=1/6 D=1/3
0 -25
25
50
75
100 125
0 -25
25
50
75
100 125
329
HRU0103A
Features

HRU0103ATRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel)
Cathode mark Mark 1
S1
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse. Symbol VRRM *1 IO *1 IFSM *2 Tj Tstg Value 30 100 3 125 55 to +125 Unit V mA V C C
(Ta = 25C)
1. Polyimide board
20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
330
HRU0103A
1.0 Pulse test 101 102 103
4
102 Pulse test 103
Ta = 75C
104
Ta = 75C
Ta = 25C
105
Ta = 25C
10
105 106
106
0.2
0.4
0.6
0.8
1.0
107
10
20
30
40
50
0V 0A t T Ta = 25C
0.10
0.08
t D= T D=1/6 sin(=180) D=1/3 D=1/2 DC
0.05
T Tj = 125C
t t D= T
D=5/6
0.04
D=2/3
0.06
0.03
D=1/2
0.04
0.02
sin(=180)
0.02
0.01
0 0
0.02
0.04 0.06
0.08 0.10
0.12
10
20
30
40
331
HRU0103A
0.12
0.10
VR=VRRM/2 Tj =125C Rth(j-a)=600C/W DC
0.08
D=1/2 sin(=180)
0.06
D=1/3 D=1/6
0.04
0.02
0 -25
25
50
75
100
125
332
HRU0203A
Features

Cathode mark Mark
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
1. Polyimide board
20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
333
HRU0203A
10 Pulse test 1.0
Ta = 75C
102 Pulse test 103

101
104
Ta = 75C
102
Ta = 25C
105
Ta = 25C
103
10
106
105
0.2
0.4
0.6
0.8
1.0
107
10
20
30
40
50
0V
0A
t T t D= T
D=1/6
0.16
0.5
T Tj = 125C
t t D= T D=5/6
Tj = 25C
0.12
sin(=180) D=1/3 D=1/2 DC
0.4
D=2/3
0.3
D=1/2 sin(=180)
0.08
0.2
0.04
0.1
0 0
0.05
0.10
0.15
0.20
0.25
0.30
0 0
10
20
30
40
334
HRU0203A
0.30
0.25
0.20
sin(=180) DC
0.15
D=1/2 D=1/3 D=1/6
0.10
0.05
0 -25
25
50
75
100
125
335
HRU0302A
Features

Cathode mark Mark
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Thermal resistance Note: Symbol VF IR C Rth(j-a) Min Typ 70 440 Max 0.40 100 Unit V A pF C/W Test Condition IF = 300 mA VR = 20 V VR = 0 V, f = 1 MHz Polyimide board *1
1. Polyimide board
20h15w0.8t
1.5
3.0
0.8
1.5
Unit: mm
336
HRU0302A
10 Pulse test 1.0
Ta = 75C
101 Pulse test 102

101
Ta = 25C
103
Ta = 75C
102
104
Ta = 25C
103
105
104
0.2
0.4
0.6
0.8
1.0
106
10
15
20
25
100 f=1MHz Pulse test
Capacitance C
(pF)
10
1.0 1.0
40
337
HRU0302A
0.25
Reverse power dissipation Pd (W) Forward power dissipation Pd (W)
0A t T Tj = 25C D=1/6 D=1/3 sin(=180) D=1/2 DC
0.20
0V D=5/6 t
0.20
t D= T
0.15
T Tj = 125C
t D= T
D=2/3
0.15
0.10
D=1/2 sin(=180)
0.10
0.05
0.05
0.05 0.10 0.15 0.20 0.25 0.30 Forward current IF (A)
10
15
20
25
0.40
0.30
DC D=1/2 sin(=180)
0.20
D=1/3 D=1/6
0.10
0 -25
25
50
75
100 125
338
HRV103A
Features

HRV103ATRF, HRV103AKRF Package Name : TURP Package Code : PUSF0002ZC-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
Cathode mark Mark 1
S1

(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol VRRM VR IO *2 IFSM *1 Tj Tstg Value 30 30 1 5 125 55 to +125 Unit V V A A C C
Notes: 1. 10 ms sine wave 1 pulse 2. Ta = 44C, With Ceramics board (board size: 50 mm 50 mm, Land size 2 mm 2 mm) Short form wave (180C), VR = 10 V.
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 VF3 IR1 IR2 C Rth(j-a) Min Typ 100 200 Max 0.27 0.36 0.42 100 1000 40 Unit V Test Condition IF = 100 mA IF = 700 mA IF = 1 A VR = 5 V VR = 30 V VR = 10 V, f = 1 MHz Ceramics board *1 Glass epoxy board *2
Reverse current Capacitance Thermal resistance
A pF C/W
Notes: 1. Ceramics board

2.0
2. Glass epoxy board

6.0
0.5
2.0 0.3 2.0
50h 50w 0.8t
0.5
6.0 0.3
50h 50w 0.8t
Unit: mm
1.0
2.0
Unit: mm
1.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow. 339
HRV103A
1.0
Ta = 75C Ta = 25C
101 Pulse test 102 Pulse test
101
102
Ta = 75C
103
Ta = 25C
103
104
104
105
105
106
0.2
0.4
0.6
0.8
1.0
106
10
20
30
40
Capacitance C (pF)
10
1.0 0.1
10
340
HRV103A
0.8 8
0V D=5/6 t T Tj = 125C t D= T 0A t T t D= T D=1/6 sin D=1/3 D=1/2 DC
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
7 6 5 4 3 2 1 0 0
Ta = 25C
D=2/3
D=1/2
sin
0.5
1.0
1.5
10
20
30
40
Forward current IF (A) Fig.4 Forward power dissipation vs. Forward current 1.2
1.0
VR=VRRM/3 Tj =125C Rth(ja)=100C/W DC
0.8
sin(=180) D=1/2 D=1/3 D=1/6
0.6
0.4
0.2
0 25
25
50
75
100
125
341
HRV103B
Features
Low reverse current and suitable for high efficiency rectifying.

HRV103BTRF, HRV103BKRF Package Name : TURP Package Code : PUSF0002ZC-A Taping Abbreviation (Quantity) TRF (4,000 pcs / reel) KRF (8,000 pcs / reel)
Cathode mark Mark
S2

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 VF3 IR1 IR2 C Rth(j-a) Min Typ 100 200 Max 0.35 0.45 0.50 10 100 40 Unit V Test Condition IF = 100 mA IF = 700 mA IF = 1 A VR = 5 V VR = 30 V VR = 10 V, f = 1 MHz Ceramics board *1 Glass epoxy board *2
Reverse current Capacitance Thermal resistance
A pF C/W

2.0

6.0
0.5
2.0 0.3 2.0
50h 50w 0.8t
0.5
6.0 0.3
50h 50w 0.8t
Unit: mm
1.0
2.0
Unit: mm
1.0
HRV103B
1.0
Ta = 75C
102 Pulse test 103

Ta = 75C
Pulse test
101
Ta = 25C
102
104
103
105
10
Ta = 25C
105
106
106 0 0.2 0.4 0.6 0.8 Forward voltage VF (V) 1.0
107
40

Capacitance C (pF)
10
1.0 0.1
10
343
HRV103B
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
D=1/6 D=1/3
4.0
0V
D=5/6
t T
T Ta= 25C
t D= T
Sin
0A
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0

Tj = 150C
D=1/2
DC
t D= T
D=2/3
D=1/2
Sin
0.5 1.0 Forward current IF (A)
1.5
40
Fig.5 Reverse power dissipation vs. Reverse voltage
1.2
1.0
VR = VRRM/2 Tj = 150C Rth(j-a) = 100C/W DC
0.8 Sin(=180) 0.6 D=1/3 0.4 D=1/6 0.2 D=1/2
0 25
0 25 50 75 100 125 150 Ambient temperature Ta (C)
344
RKR0503AKH
Features

RKR0503AKHP, RKR0503AKHR Package Name : TURP Package Code : PUSF0002ZC-A Taping Abbreviation (Quantity) P (4,000 pcs / reel) 1 R (8,000 pcs / reel)
Cathode mark Mark
S8
1. Cathode 2. Anode

(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol VRRM VR IO *1 *2 IFSM *3 Tj Tstg Value 30 30 0.5 3 125 55 to +125 Unit V V A A C C
Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 62C, With Glass epoxy board (board size: 50 mm 50 mm, Land size 6 mm 6 mm) Short form wave (180C), VR = 10 V. 3. 10 ms sine wave 1 pulse.
(Ta = 25C)
Item Forward voltage Reverse current Thermal resistance Symbol VF Min Typ Max 0.37 500 Unit V A C/W Test Condition IF = 500 mA VR = 30 V Glass epoxy board *1
200
IR
Rth(j-a)
Notes: 1. Glass epoxy board

6.0
0.5
6.0 0.3 2.0
50h50w0.8t
Unit: mm
1.0
2. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
345
RKR0503AKH
1.0 Pulse test 101
Ta = 75C
101 Pulse test 102
Ta = 75C
102
Ta = 25C
103
103
104
Ta = 25C
104
105
105
0.1
0.2
0.3
0.4
0.5
106
10
15
20
25
30
Capacitance C (pF)
100
10
1.0 0.1
1.0
10
100
346
RKR0503AKH
0.4 2.5 D=1/6 0A 0.3 0.25 0.2 0.15 0.1 0.05 0 0 0.1 0.2 0.3 0.4 0.5 0.6 t T Ta = 25C t D= T D=1/3 Sin D=1/2 DC
0.35
0V t T Tj = 125C
D=5/6
t D= T
D=2/3
1.5
D=1/2
Sin
0.5
0 0 10 20 30 40
0.6
VR = 10V Tj = 125C Rth(j-a) = 200C/W
D=1/2 DC
0.5
0.4
0.3 D=1/3 D=1/6 0.1 Sin(=180)
0.2
0 -25
25
50
75
100
125
347
RKR0503BKH
Features
Low reverse current drop and suitable for high efficiency rectifying.

RKR0503BKHP, RKR0503BKHR Package Name : TURP Package Code : PUSF0002ZC-A Taping Abbreviation (Quantity) P (4,000 pcs / reel) 1 R (8,000 pcs / reel)
Cathode mark Mark
S9
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Reverse current Thermal resistance Symbol VF1 VF2 IR Rth(j-a) Min Typ 200 Max 0.34 0.44 100 Unit V V A C/W Test Condition IF = 100 mA IF = 500 mA VR = 30 V Glass epoxy board *1
Notes: 1. Glass epoxy board

6.0
0.5
6.0 0.3 2.0
50h50w0.8t
Unit: mm
1.0
348
RKR0503BKH
1.0 Pulse test 101
Ta = 75C
101
Pulse test
102
102
Ta = 25C
103
Ta = 75C
103
104
104
105
Ta = 25C
105 0
0.1
0.2
0.3
0.4
0.5
106
10
15
20
25
30
Capacitance C (pF)
100
10
1.0 0.1
1.0
10
100
349
RKR0503BKH
0.4 2.5 0A t T Ta = 25C 0.25 0.2 0.15 0.1 0.05
0.35 0.3
D=1/6 t D= T
0V 2 T Tj = 150C 1.5 t
D=5/6
D=1/3 Sin D=1/2 DC
t D= T
D=2/3
D=1/2
Sin
0.5
0 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward current IF (A) Fig.4 Forward power dissipation vs. Forward current
10
20
30
40
0.6 VR = VRRM/2
Tj = 150C Rth(j-a) = 200C/W
0.5 0.4 0.3
DC
Sin(=180)
0.2
D=1/6
D=1/2 D=1/3
0.1 0 -25
25
50 75 100 125 150
350
RKR0505AKH
Features

RKR0505AKHP, RKR0505AKHR Package Name : TURP Package Code : PUSF0002ZC-A Taping Abbreviation (Quantity) P(4,000 pcs / reel) 1 R (8,000 pcs / reel) Cathode mark Mark
S6

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF1 Min Typ Max 0.25 0.46 200 400 20 Unit V A pF C/W Test Condition IF = 10 mA IF = 500 mA VR = 10 V VR = 20 V VR = 10 V, f = 1 MHz Ceramics board *1 Glass epoxy board *2
100 200
VF2 IR1 IR2 C

Rth(j-a)

2.0

6.0
0.5
2.0 0.3 2.0
50h50w0.8t
0.5
6.0 0.3
50h50w0.8t
Unit: mm
1.0
2.0
Unit: mm
1.0
RKR0505AKH
1.0 Pulse test 101 102 101 Pulse test
Ta = 75C
102
Ta = 25C
103
Ta = 75C
103
104
Ta = 25C
104
105
105 0
0.1
0.2
0.3
0.4
0.5
106 0
10
15
20
100
f = 1MHz Pulse test
Capacitance C (pF)
10
1.0 0.1
1.0
10
100
352
RKR0505AKH
0.5
0A t T Ta= 25C D=1/6 t D= T D=1/3 Sin D=1/2 DC 10
0V 8 T Tj = 125C 6 D=2/3 D=1/2 Sin 2 t
0.4
t D= T
D=5/6
0.3
0.2
0.1
0 0
0.1
0.2
0.3
0.4
0.5
0.6
10
20
30
40
50
60
0.6 VR = 10V
Tj = 125C Rth(j-a) = 200C/W DC
0.5 0.4 0.3

D=1/6 Sin(=180) D=1/2 D=1/3
0.2 0.1 0 -25
25
50
75
100 125
353
RKR0505BKH
Features

RKR0505BKHP, RKR0505BKHR Package Name : TURP Package Code : PUSF0002ZC-A Taping Abbreviation (Quantity) P(4,000 pcs / reel) 1 R (8,000 pcs / reel) Cathode mark Mark
S7

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF Min Typ Max 0.60 20 40 20 Unit V A pF C/W Test Condition IF = 500 mA VR = 10 V VR = 30 V VR = 10 V, f = 1 MHz Ceramics board *1 Glass epoxy board *2
100 200
IR1 IR2 C
Rth(j-a)

2.0

6.0
0.5
2.0 0.3 2.0
50h50w0.8t
0.5
6.0 0.3
50h50w0.8t
Unit: mm
1.0
2.0
Unit: mm
1.0
354
RKR0505BKH
1.0 Pulse test 101
Ta = 75C
102 Pulse test 103
102
Ta = 25C
104
Ta = 75C
103
105
Ta = 25C
104
106
105
0.1
0.2
0.3
0.4
0.5
0.6
107
10
20
30
40
50
100
f = 1MHz Pulse test
Capacitance C (pF)
10
1.0 0.1
1.0
10
100
355
RKR0505BKH
0.5
0A t T Ta = 25C D=1/6 D=1/3 Sin D=1/2
2.0
0V t
0.4
t D= T
D=5/6
t D= T
1.5
T Tj = 150C
0.3
D=2/3 D=1/2 Sin
DC
1.0
0.2
0.1
0.5
0 0
0.1
0.2
0.3
0.4 0.5
0.6
0 0
10
20
30
40
50
60
0.6 VR = VRRM/2
Tj = 150C Rth(j-a) = 200C/W
0.5 0.4 0.3

Sin(=180) DC
0.2 0.1 0 -25

D=1/6
D=1/2 D=1/3
25
50 75 100 125 150
356
RKR0703BKH
Features

RKR0703BKHP, RKR0703BKHR Package Name : TURP Package Code : PUSF0002ZC-A Taping Abbreviation (Quantity) P(4,000 pcs / reel) 1 R (8,000 pcs / reel)
Cathode mark Mark
S5
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF1 VF2 IR1 IR2 C Rth(j-a) Min Typ 100 200 Max 0.37 0.55 10 50 20 Unit V A pF C/W Test Condition IF = 100 mA IF = 700 mA VR = 5 V VR = 30 V VR = 10 V, f = 1 MHz Ceramics board *1 Glass epoxy board *2

2.0

6.0
0.5
2.0 0.3 2.0
50h50w0.8t
0.5
6.0 0.3
50h50w0.8t
Unit: mm
1.0
2.0
Unit: mm
1.0
RKR0703BKH
1.0 Pulse test 101
Ta = 75C Ta = 25C
102 Pulse test 103

102
104
Ta = 75C
103 104
105
Ta = 25C
105
10
106 0
0.1
0.2
0.3
0.4
0.5
107 0
10
20
30
40
100 f=1MHz Pulse test
Capacitance C (pF)
10
1.0 0.1
1.0
10
100
358
RKR0703BKH
0.6
D=1/6 D=1/3 sin T t D= T
0.8
0V 0A t
0.5
0.7 0.6 0.5 0.4 0.3

T Tj = 150C
D=1/2
t D= T
D=5/6
0.4
Ta = 25C DC
D=2/3
0.3
D=1/2
0.2
sin
0.2 0.1 0 0
0.1
0 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Forward current IF (A)
10
20
30
40
Fig.4 Forward power dissipation vs. Forward current 0.8 VR = VRRM/2 0.7
Tj = 150C Rth(j-a) = 200C/W
0.6 0.5 0.4 0.3 0.2 0.1 0 25

Sin(=180) D=1/2 D=1/3 D=1/6
DC
25
50
75
100 125 150
359
RKR104BKH
Features

RKR104BKHP, RKR104BKHR Package Name : TURP Package Code : PUSF0002ZC-A Taping Abbreviation (Quantity) P(4,000 pcs / reel) R (8,000 pcs / reel)
Cathode mark Mark 1
S4
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF1 VF2 IR1 IR2 C Rth(j-a) Min Typ 100 200 Max 0.37 0.55 10 50 35 Unit V A pF C/W Test Condition IF = 100 mA IF = 700 mA VR = 5 V VR = 40 V VR = 10 V, f = 1 MHz Ceramics board *1 Glass epoxy board *2

2.0

6.0
0.5
2.0 0.3 2.0
50h 50w 0.8t
0.5
6.0 0.3
50h 50w 0.8t
Unit: mm
1.0
2.0
Unit: mm
1.0
360
RKR104BKH
1.0
Ta = 75C
Pulse test
102 Pulse test 103
101
102
Ta = 25C
Ta = 75C
104
103
105
Ta = 25C
104
105
106
106
0.2
0.4
0.6
0.8
1.0
107
10
20
30
40
Capacitance C (pF)
10
1.0 0.1
10
361
RKR104BKH
4.0
0V
1.2
0A t T Ta = 25C t D= T D=1/6 sin D=1/3 D=1/2 DC
3.5
t
1.0
3.0 2.5
T Tj = 150C
t D= T
D=5/6
0.8
D=2/3
0.6
2.0
D=1/2
1.5 1.0 0.5

sin
0.4
0.2
0 0
0.5
1.0
1.5
0 0
10
20
30
40
50
Forward current IF (A) Fig.4 Forward power dissipation vs. Forward current 1.2
1.0
DC
0.8
0.6
sin(=180) D=1/2
0.4
D=1/3 D=1/6
0.2
0 25
25
50
75
100 125 150
362
HSM107S
Silicon Schottky Barrier Diode for System Protection
Features
Low VF and high efficiency. HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems

HSM107STR, HSM107STL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2
C5
2 1
(Top view)
(Top view)

(Ta = 25C)
Item Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Notes: 1. Rectangular wave, 10 ms. 2. Per one device. Symbol VR IFM IFSM *1 IO *2 Tj Tstg Value 8 0.1 0.5 50 125 55 to +125 Unit V A A mA C C
(Ta = 25C)
Item Reverse voltage Reverse current Forward voltage ESD Capability *2 Symbol VR IR VF Min 8 100 Typ Max 30 0.3 Unit V A V V Test Condition IR = 1.0 mA VR = 5 V IF = 10 mA C = 200 pF, Both forward and reverse direction 1 pulse
Notes: 1. Per one device. 2. Failure Criterion ; IR 60 A at VR = 5 V.
363
HSM107S
101 102
102
103
103
104
104
105
105
106
107
0.1
0.2
0.3
0.4
0.5
106
10
10 f = 1MHz
Capacitance C (pF)
1.0
0.1 1.0
40
364
HSM126S
Silicon Schottky Barrier Diode for System Protection
Features
HSM126S which is connected in series configuration enable to protect electric systems from miss-operation against external + and surge. Low VF and low leakage current.

HSM126STR, HSM126STL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2
S14
2 1
(Top view)
(Top view)

(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Sine wave, Two device total. 2. 50 Hz half sine wave 1 pulse. 3. Per one device. Symbol VRRM IO *1 IFSM *2 Tj Tstg Value 20 200 2 125 55 to +125 Unit V mA A C C
(Ta = 25C)
Item Reverse current Forward voltage Capacitance Note: 1. Per one device. Symbol IR VF C Min Typ 40 Max 2.0 0.35 Unit A V pF Test Condition VR = 5 V IF = 10 mA VR = 0 V, f = 1 MHz
365
HSM126S
10 Pulse test 1.0
102 Pulse test 103
101
Ta = 75C
104
Ta = 75C
102
Ta = 25C
105
Ta = 25C
10
104
106
105
0.2
0.4
0.6
0.8
1.0
107
10
15
20
25
30

Capacitance C (pF)
10
1.0 0.1
10
366
RKZ-KP Series
Silicon Planar Zener Diode for Surge Absorption
Features
High ESD-Capability 30 kV, human body model (IEC61000-4-2). Wide zener voltage range from 6.2 V through 8.2 V. Halogen free, Environmental friendly Package include Conformity to RoHS Directive.

RKZ-KP Series Package Name : MP6 Package Code: PXSN0002ZB-A Taping Abbreviation (Quantity) 1 R (10,000 pcs / reel) Cathode mark Mark
Mark Code
Part No. RKZ6.2BKP RKZ6.8BKP RKZ8.2BKP Mark No. U V W

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: 1. With P.C. Board. Symbol Pd *1 Tj Tstg Value 100 150 55 to +150 Unit mW C C
(Ta = 25C)
Zener Voltage VZ (V) *1 Min Max 5.86 6.47 7.76 6.53 7.14 8.64 Test Condition IZ (mA) 5 5 5 Reverse Current IR (A) Max 2 2 2 Test Condition VR (V) 3.0 3.5 5.0 Dynamic Resistance rd () Max 50 30 30 Test Condition IZ (mA) 5 5 5 ESD-Capability (kV) *2 Min 30 30 30
Part No. RKZ6.2BKP RKZ6.8BKP RKZ8.2BKP
Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 , Both forward and reverse direction 10 pulse. Failure criterion should according to IR spec. 3. Please do not use the soldering iron due to avoid high stress to the MP6 package.
367
RKZ-KP Series
10-2
RKZ6.2BKP RKZ6.8BKP RKZ8.2BKP
Zener Current IZ (mA)
10-3
10-4
10-5
10-6
10
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage
250
Polyimide board
20h15w0.8t
Power Dissipation Pd (mW)
1.5
3.0
150
1.5
Unit: mm
100
50
50
100
150
0.8
200
200
Ambient Temperature Ta (C) Fig.2 Power Dissipation vs. Ambient Temperature
368
HZL6.2Z4
Silicon Planar Zener Diode for Surge Absorb
Features
Low capacitance (C = 4.0 pF max) and can protect ESD of signal line.

HZL6.2Z4KRF

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: See Fig.2. Symbol Pd * Tj Tstg Value 100 150 55 to +150 Unit mW C C
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *1 Symbol VZ IR C rd Min 5.90 8 Typ Max 6.50 3 4.0 60 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both Forward and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR > 3 A at VR = 5.5 V. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
369
HZL6.2Z4
102 250
Polyimide board 20h15w0.8t
103
Zener Current IZ (A)
200
3.0
1.5
150
1.5
unit: mm
104
100
105
50
106
10
50
100
150
Nonrepetitive Surge Reverses Power PRSM (W)
104 PRSM t 10
3
Ta = 25C nonrepetitive
102
10
1.0
10-2
10-1
1.0 Time t (ms)
10
102
103
Fig.3 Surge Reverse Power Ratings
370
0.8
200
HZL6.8Z4
Features

HZL6.8Z4KRF

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *1 Symbol VZ IR C rd Min 6.47 8 Typ Max 7.00 2 4.0 30 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both Forward and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR > 2 A at VR = 3.5 V. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
371
HZL6.8Z4
102 250
103
200
3.0
1.5
150
1.5
unit: mm
104
100
105
50
106
10
50
100
150
104 PRSM t 10
3
102
10
1.0
102
101
1.0 Time t (ms)
10
102
103
372
0.8
200
HZD6.2Z4
Features

HZD6.2Z4KRF Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) 1 KRF (8,000 pcs / reel) Cathode mark Mark
N1
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *1*2 Symbol VZ IR C rd Min 5.9 8 Typ Max 6.5 3 4 60 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR > 3 A at VR = 5.5 V. 2. Between cathode and anode. 3. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
373
HZD6.2Z4
102 250
103
200
3.0
1.5
150
1.5
unit: mm
104
100
105
50
106
10
50
100
150
104 PRSM t 10
3
102
10
1.0
10-2
10-1
1.0 Time t (s)
10
102
103
374
0.8
200
HZD6.8Z4
Features

HZD6.8Z4KRF
Cathode mark Mark 1
N2
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *1*2 Symbol VZ IR C rd Min 6.47 8 Typ Max 7.00 2 4 30 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 1 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR > 2 A at VR = 3.5 V. 2. Between cathode and anode. 3. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
375
HZD6.8Z4
102 250
103
200
3.0
1.5
150
1.5
unit: mm
104
100
105
50
106
10
50
100
150
104 PRSM t 10
3
102
10
1.0
102
101
1.0 Time t (s)
10
102
103
376
0.8
200
HZU6.2Z
Silicon Epitaxial Planar Zener Diode for Surge Absorb
Features
Low capacitance (C = 8.5 pF max) and can protect signal line from ESD.

HZU6.2ZTRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel)
Cathode mark Mark
62Z
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance Symbol VZ IR C rd Min 5.90 Typ 8.0 Max 6.50 3 8.5 60 Unit V A pF Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz IZ = 5 mA
377
HZU6.2Z
10-2 250
Polyimide board 20hx15wx0.8t
10-3
200
3.0
1.5
150
1.5
unit: mm
10-4
100
10-5
50
10-6
10
50
100
150
104 PRSM t 10
3
102
10
1.0
10-5
10-4
10-3 Time t (s)
10-2
10-1
1.0
378
0.8
200
HZU6.2Z
104
Transient Thermal Impedance Zth (C/W)
103
102
10
1.0
10-2
10-1
1.0 Time t (s)
10
102
103
Fig.4 Transient Thermal Impedance
379
HZU6.8Z
Features
Low capacitance (C = 25 pF max) and can protect signal line from ESD.

HZU6.8ZTRF Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel)
Cathode mark Mark
68Z
1. Cathode 2. Anode

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability * Symbol VZ IR C rd Min 6.47 20 Typ Max 7.0 2 25 30 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Note: Failure criterion ; IR > 2 A at VR = 3.5 V.
380
HZU6.8Z
10-2 250
10-3
200
3.0
1.5
150
1.5
unit: mm
10-4
100
10-5
50
10-6
10
50
100
150
104 PRSM t 10
3
102
10
1.0
10-5
10-4
10-3 Time t (s)
10-2
10-1
1.0
0.8
200
381
HZU6.8Z
104
103
102
10
1.0
10-2
10-1
1.0 Time t (s)
10
102
103
382
HZM6.2ZMWA
Features
HZM6.2ZMWA has two devices in a monolithic, and can absorb surge. Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.

HZM6.2ZMWATR, HZM6.2ZMWATL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3
62N
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: Symbol Pd *1 Tj Tstg Value 200 150 55 to +150 Unit mW C C
1. Two device total, See Fig.2.
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd Min 5.90 13 Typ Max 6.50 3 8.5 60 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device 2. Failure criterion ; IR > 3 A at VR = 5.5 V.
383
HZM6.2ZMWA
102 250
1.0mm
103
200
Cu Foil
150
Printed circuit board 25 62 1.6t mm Material: Glass Epoxy Resin+Cu Foil
104
100
105
50
106
10
50
100
150
0.8mm
200
104 PRSM t 10
3
102
10
1.0
105
104
103 Time t (s)
102
101
1.0
384
HZM6.2ZMWA
104
103
102
10
1.0
102
101
1.0 Time t (s)
10
102
103
Fig.4 Transient Thermal Impedance * Note: Measurement value by forward bias.
385
HZM6.2Z4MWA
Features
HZM6.2Z4MWA has two devices in a monolithic, and can absorb surge. Low capacitance (C = 4.0 pF Typ / 4.5 pF Max) and can protect ESD of signal line.

HZM6.2Z4MWATR, HZM6.2Z4MWATL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3
N1
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: Two device total, See Fig.2. Symbol Pd * Tj Tstg Value 200 150 55 to +150 Unit mW C C
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd Min 5.90 8 Typ 4.0 Max 6.50 3 4.5 60 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Failure criterion ; IR > 3 A at VR = 5.5 V.
386
HZM6.2Z4MWA
102 250
1.0mm
0.8mm
103
200
Cu Foil
150
104
100
105
50
106
10
50
100
150
200
104 PRSM t 10
3
102
10
1.0
102
101
1.0 Time t (ms)
10
102
103
387
HZM6.8ZMWA
Features
HZM6.8ZMWA has two devices in a monolithic, and can absorb surge. Low capacitance (C = 25 pF max) and can protect ESD of signal line.

HZM6.8ZMWATR, HZM6.8ZMWATL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3
68N
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd Min 6.47 20 Typ Max 7.0 2 25 30 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
388
HZM6.8ZMWA
10-2 250
1.0mm
0.8mm
10-3
200
Cu Foil
150
10-4
100
10-5
50
10-6
10
0 0 50 100 150 200 Ambient Temperature Ta (C) Fig.2 Power Dissipation vs. Ambient Temperature
104 PRSM t 103 Ta = 25C nonrepetitive
102
10
1.0
10-5
10-4
10-3 Time t (s)
10-2
10-1
1.0
389
HZM6.8ZMWA
104
103
102
10
1.0
10-2
10-1
1.0 Time t (s)
10
102
103
390
HZM6.8Z4MWA
Features
HZM6.8Z4MWA has two devices in a monolithic, and can absorb surge. Low capacitance (C = 4.0 pF Typ / 4.5 pF max) and can protect ESD of signal line.

HZM6.8Z4MWATR, HZM6.8Z4MWATL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3
N2
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: two device total, See Fig.2. Symbol Pd * Tj Tstg Value 200 150 55 to +150 Unit mW C C
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd Min 6.47 8 Typ 4.0 Max 7.00 2 4.5 30 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Failure criterion ; IR > 2 A at VR = 3.5 V.
391
HZM6.8Z4MWA
102 250
1.0mm
0.8mm
103
200
Cu Foil
150
104
100
105
50
106
10
50
100
150
200
102
10
1.0
102
101
1.0 Time t (ms)
10
102
103
392
HZM6.8MWA
Features
HZM6.8MWA has two devices in a monolithic, and can absorb surge.

HZM6.8MWATR, HZM6.8MWATL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3
68M
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
Item Power dissipation Pd *1 Junction temperature Tj Storage temperature Tstg Note: 1. Two device total, See Fig.2. Symbol Value 200 150 55 to +150 Unit mW C C
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2, *3 Symbol VZ IR C rd Min 6.47 30 Typ Max 7.0 2 130 30 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
393
HZM6.8MWA
10-2 10-3 10-4
10-5 10-6 10-7 10-8 10

-9
Ta=75C Ta=25C Ta=-25C
10-10
250
1.0mm
200
Cu Foil
150
100
50
394
0.8mm
HZM27WA
Features
HZM27WA has two devices, and can absorb surge. MPAK Package is suitable for high density surface mounting.

HZM27WATR, HZM27WATL Package Name : MPAK Package Code: PLSP0003ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 3 3
27A
2 1
(Top view)
2 1 (Top View)

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *3 Symbol VZ IR C rd Min 25.10 30 Typ (27) *2 Max 28.90 2 70 Unit V A pF kV Test Condition IZ = 2 mA, 40 ms pulse VR = 21 V VR = 0 V, f = 1 MHz IZ = 2 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Reference only. 3. Failure criterion ; IR > 2 A at VR = 21 V
395
HZM27WA
10 250
1.0mm
200
Cu Foil
150
100
50
0 0 5 10 15 20 25 30 35 40 Zener Voltage VZ (V) Fig.1 Zener Current vs. Zener Voltage
102
10
1.0
10-5
10-4
10-3 Time t (s)
10-2
10-1
1.0
396
0.8mm
HZM27WA
104
103
102
10
1.0
10-2
10-1
1.0 Time t (s)
10
102
103
397
HZM6.2ZMFA
Features
HZM6.2ZMFA has four devices in a monolithic, and can absorb surge. Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.

HZM6.2ZMFATR, HZM6.2ZMFATL Package Name : MPAK-5 Package Code: PLSP0005ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 1 2 1 2
62N
4 3 5 (Top View) 4 3 5 (Top View)
1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode

(Ta = 25C)
Item Power dissipation Pd * Junction temperature Tj Storage temperature Tstg Note: Four device total, See Fig.2. Symbol Value 200 150 55 to +150 Unit mW C C
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd Min 5.90 13 Typ Max 6.50 3 8.5 60 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR =0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse.
398
HZM6.2ZMFA
102 250
1.0mm
103
200
Cu Foil
150
104
100
105
50
106
10
50
100
150
0.6mm
200
104 PRSM t 10
3
102
10
1.0
105
104
103 Time t (s)
102
101
1.0
399
HZM6.2ZMFA
104
103
102
10
1.0
102
101
1.0 Time t (s)
10
102
103
Fig.4 Transient Thermal Impedance * Note: Measurement value by forward bias.
400
HZM6.2Z4MFA
Features
HZM6.2Z4MFA has four devices in a monolithic, and can absorb surge. Low capacitance (C = 4.0 pF Typ / 4.5 pF max) and can protect ESD of signal line.

HZM6.2Z4MFATR, HZM6.2Z4MFATL Package Name : MPAK-5 Package Code: PLSP0005ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 1 2 1 2 1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode
N1

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *
2
Symbol VZ IR C rd
Min 5.90 8
Typ 4.0
Max 6.50 3 4.5 60
Unit V A pF kV
Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR =0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse.
401
HZM6.2Z4MFA
102 250
1.0mm
103
200
Cu Foil
150
104
100
105
50
106
10
50
100
150
0.6mm
200
104 PRSM t 10
3
102
10
1.0
102
101
1.0 Time t (s)
10
102
103
402
HZM6.8MFA
Features
HZM6.8MFA has four devices in a monolithic, and can absorb surge.

HZM6.8MFATR, HZM6.8MFATL Package Name : MPAK-5 Package Code: PLSP0005ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 1 2 1 2 1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode
68M

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd Min 6.47 30 Typ Max 7.00 2 130 30 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse.
403
HZM6.8MFA
10-1 10-2 10-3
10-4 10-5 10-6 10-7 10-8 10-9

Ta=75C Ta=25C Ta=-25C
250
1.0mm
200
Cu Foil
150
100
50
404
0.6mm
HZM6.8ZMFA
Features
HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. Low capacitance (C = 25 pF max) and can protect ESD of signal line.

HZM6.8ZMFATR, HZM6.8ZMFATL Package Name : MPAK-5 Package Code: PLSP0005ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 1 2 1 2 1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode
68N

(Ta = 25C)
(Ta = 25C)
2
Symbol VZ IR C rd
Min 6.47 25
Typ
Max 7.00 2 25 30
Unit V A pF kV
405
HZM6.8ZMFA
10-2 250
1.0mm
10-3
200
Cu Foil
150
10-4
100
10-5
50
10-6
10
50
100
150
0.6mm
200
102
10
1.0
10-5
10-4
10-3 Time t (s)
10-2
10-1
1.0
406
HZM6.8ZMFA
104
103
102
10
1.0 10-2 10-1 1.0 Time t (s) Fig.4 Transient Thermal Impedance 10 102 103
407
HZM6.8Z4MFA
Features
HZM6.8Z4MFA has four devices in a monolithic, and can absorb surge. Low capacitance (C = 4.0 pF Typ / 4.5 pF max) and can protect ESD of signal line.

HZM6.8Z4MFATR, HZM6.8Z4MFATL Package Name : MPAK-5 Package Code: PLSP0005ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 1 2 1 2 1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode
N2

(Ta = 25C)
(Ta = 25C)
2
Symbol VZ IR C rd
Min 6.47 8
Typ 4.0
Max 7.00 2 4.5 30
Unit V A pF kV
408
HZM6.8Z4MFA
102 250
1.0mm
103
200
Cu Foil
150
104
100
105
50
106
10
50
100
150
0.6mm
200
102
10
1.0
102
101
1.0 Time t (s)
10
102
103
409
HZM27FA
Features
HZM27FA has four devices, and can absorb surge.

HZM27FATR, HZM27FATL Package Name : MPAK-5 Package Code: PLSP0005ZC-A Taping Abbreviation (Quantity) TR(3,000 pcs / reel) TL(3,000 pcs / reel) 1 2 1 2 1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode
27A

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *3 Symbol VZ IR C rd Min 25.10 30 Typ (27) *2 Max 28.90 2 70 Unit V A pF kV Test Condition IZ = 2 mA, 40 ms pulse VR = 21 V VR = 0 V, f = 1 MHz IZ = 2 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse.
Notes: 1. Per one device 2. Reference only 3. Failure criterion ; IR > 2 A at VR = 21 V
410
HZM27FA
10-3 10-4 10-5
10-6 10-7 10-8 10-9 10-10 10-11
10
15
20 Vz (V)
25
30
Zener Voltage
Fig.1 Zener current vs. Zener voltage
250
1.0mm
200
Cu Foil
150
100
50
0.6mm
50
100
150
200
411
RKZ6.2Z4MFAKT
Features
RKZ6.2Z4MFA has four devices in a monolithic, and can absorb surge. Low capacitance (C = 4.0 pF Typ) and can protect ESD of signal line.

RKZ6.2Z4MFAKTP, RKZ6.2Z4MFAKTH Package Name : VSON-5 Package Code: PUSN0005KB-A Taping Abbreviation (Quantity) P(3,000 pcs / reel) H(3,000 pcs / reel) 1 2 1 2 (Month code)
N4
Month Code
Month of Manufacture January February March April May June Assemble JAPAN MALAYSIA A B C D E F 1 2 3 4 5 6 Month of Manufacture July August September October November December Assemble JAPAN MALAYSIA G H J K L M 7 8 9 W X Y

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: Four device total, See Fig.2. Symbol Pd * Tj Tstg Value 150 150 55 to +150 Unit mW C C
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2, *3 Symbol VZ IR C rd Min 5.90 8 Typ 4.0 Max 6.50 3 4.5 60 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Failure criterion ; IR > 3 A at VR = 5.5 V. 3. Between cathode and anode. 412
RKZ6.2Z4MFAKT
10-2 10
-3
0.3
250
20h 15w 0.8t
Unit: mm
2.45
10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 0 6 2 4 Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage 8
1.0
1.75 1.5
150
With polyimide board
100
50
50 100 150 Ambient Temperature Ta (C)
3.0 3.8
200
200
Fig.2 Power Dissipation vs. Ambient Temperature
102
10
1.0
102
101
1.0 Time t (ms)
10
102
103
413
RKZ6.8ZMFAKT
Features
RKZ6.8ZMFAKT has four devices in a monolithic, and can absorb surge.

RKZ6.8ZMFAKTP, RKZ6.8ZMFAKTH Package Name : VSON-5 Package Code: PUSN0005KB-A Taping Abbreviation (Quantity) P(3,000 pcs / reel) H(3,000 pcs / reel) 1 2 1 2 (Month code)
N3
Month Code
Assemble Month of Manufacture January February March April May June JAPAN A B C D E F MALAYSIA 1 2 3 4 5 6 Month of Manufacture July August September October November December Assemble JAPAN G H J K L M MALAYSIA 7 8 9 W X Y

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2, *3 Symbol VZ IR C rd Min 6.47 25 Typ Max 7.00 0.5 25 30 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Failure criterion ; IR > 0.5 A at VR = 3.5 V. 3. Between cathode and anode.
414
RKZ6.8ZMFAKT
10-2 10-3
250
20h 15w 0.8t 0.3
3.0 3.8
Unit: mm
2.45
10-4
200
10-5 10-6 10-7 10

-8
1.0
1.75 1.5
150
100
10-9 10-10 10-11 0 1 2 3 4 5 6 7
50
0 0 50 100 150 200 Ambient Temperature Ta (C)
102
10
1.0
105
104
103 Time t (s)
102
101
1.0
415
RKZ6.8ZMFAKT
104
103
102
10
1.0
102
101
1.0 Time t (s)
10
102
103
416
RKZ6.8Z4MFAKT
Features
RKZ6.8Z4MFAKT has four devices in a monolithic, and can absorb surge. Low capacitance (C = 4.0 pF Typ) and can protect ESD of signal line.

RKZ6.8Z4MFAKTP, RKZ6.8Z4MFAKTH Package Name : VSON-5 Package Code: PUSN0005KB-A Taping Abbreviation (Quantity) P(3,000 pcs / reel) H(3,000 pcs / reel) 1 2 1 2 (Month code)
N5
Month Code
Assemble Month of Manufacture January February March April May June A B C D E F JAPAN MALAYSIA 1 2 3 4 5 6 Month of Manufacture July August September October November December G H J K L M Assemble JAPAN MALAYSIA 7 8 9 W X Y

(Ta = 25C)
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2, *3 Symbol VZ IR C rd Min 6.47 8 Typ 4.0 Max 7.00 2 4.5 30 Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Failure criterion ; IR > 2 A at VR = 3.5 V. 3. Between cathode and anode. 417
RKZ6.8Z4MFAKT
10-2 10 10
-3
0.3
250
20h 15w 0.8t
Unit: mm
-4
2.45
10-5 10-6 10-7 10

-8
1.0
1.75 1.5
150
100
10-9 10
-10
50
10-11
4 5 2 6 3 Zener Voltage VZ (V)
50 100 150 Ambient Temperature Ta (C)
3.0 3.8
200
200
Fig.1 Zener current vs. Zener voltage
102
10
1.0
102
101
1.0 Time t (ms)
10
102
103
418
RKZ6.8TKK, RKZ6.8TKJ
Silicon Planar Zener Diode for Bidirectional Surge Absorption
Features
This product is for a two-way zener diode so its possible to use for bidirectional surge absorption. Surge absorption for electronic devices such as LED-equipped devices.

RKZ6.8TKKR Package Name : SFP Package Code: PUSF0002ZB-A Taping Abbreviation (Quantity) 1 R(8,000 pcs / reel) 1 (Top View) Cathode mark Mark RKZ6.8TKJR Package Name : UFP Package Code: PWSF0002ZA-A Taping Abbreviation (Quantity) 1 R(8,000 pcs / reel) 1 (Top View) Cathode mark Mark
N3
2 2
1. Cathode 2. Anode
N3
2 2
1. Cathode 2. Anode

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Notes: 1. Per one device 2. See Fig.2. Symbol Pd *2 Tj Tstg Value 150 150 55 to +150 Unit mW C C
(Ta = 25C)
Item Zener voltage Reverse current ESD-Capability *1 Symbol VZ IR Min 5.80 25 Typ Max 7.80 0.5 Unit V A kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR > 0.5 A at VR = 3.5 V.( Both direction) 2. In the EFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
419
RKZ6.8TKK, RKZ6.8TKJ
102 250
103
200
3.0
1.5
150
1.5
unit: mm
104
100
105
50
106
10
50
100
150
104 PRSM t 10
3
102
10
1.0
102
101
1.0 Time t (ms)
10
102
103
420
0.8
200
RKZ27TKG
Silicon Epitaxial Planar Zener Diode for Bidirectional Surge Absorption
Features
1 package with Bidirectional characteristic suppresses surges in both forward and reverse directions (positive and negative surges). High ESD resistance (guarantee of 30 kV , compliant with the IEC 61000-4-2 standard) Suitable for protecting CAN/LIN-BUS lines. Support for specifications of automobiles.

RKZ27TKGP Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) P(3,000 pcs / reel) Cathode mark Mark
N6

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 200 150 55 to +150 Unit mW C C
(Ta = 25C)
Item Zener voltage Reverse current Capacitance ESD-Capability *1 Note: Symbol VZ IR C Min 26.2 30 Typ Max 31.5 0.1 30 Unit V A pF kV Test Condition IZ = 1 mA, 40 ms pulse VR = 24 V VR = 0 V, f = 1 MHz C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Failure criterion ; IR > 0.1 A at VR = 24 V. (Both direction)
421
RKZ27TKG
102
103
10-4
105
106
10-7 10-8 0 5 10 15 20 25 30 Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage 250
200
3.0
1.5
150
1.5
unit: mm
100
50
50
100
150
422
0.8
200
RKZ27TWAQE
Silicon Epitaxial Planar Zener Diode for Bidirectional Surge Absorption
Features
2 lines with bidirectional characteristic in 1 package suppresses surges in both forward and reverse directions (positive and negative surges). High ESD resistance (guarantee of 30 kV , compliant with the IEC 61000-4-2 standard) Suitable for protecting CAN-BUS lines. Support for specifications of automobiles.

RKZ27TWAQEH Package Name : CMPAK Package Code : PTSP0003ZB-A Taping Abbreviation (Quantity) H(3,000 pcs / reel) Mark 3 3
N6
2 1 (Top View) 2 1

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: 1 package total, See Fig.2. Symbol Pd * Tj Tstg Value 200 150 55 to +150 Unit mW C C
(Ta = 25C)
Item Zener voltage Reverse current Capacitance ESD-Capability *2 Symbol VZ IR C Min 26.2 30 Typ Max 31.5 0.1 30 Unit V A pF kV Test Condition IZ = 1 mA, 40 ms pulse VR = 24 V VR = 0 V, f = 1 MHz C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device 2. Failure criterion ; IR > 0.1 A at VR = 24 V. (Both direction)
423
RKZ27TWAQE
102
103
10-4
105
106
10-7 10-8 0 5 10 15 20 25 30 Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage
250
1.0mm
200
Cu Foil
150
100
50
50
100
150
0.8mm
200
424
HZ Series
Silicon Planar Zener Diode for Stabilized Power Supply
Features
Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

HZ Series Package Name : DO-35 Package Code : GRZZ0002ZB-A Taping Abbreviation (Quantity) TA (5,000 pcs / reel)
7 B2
Part No. Cathode band (Navy Blue)
1. Cathode 2. Anode

(Ta = 25C)
425
HZ Series
(Ta = 25C)
Zener Voltage VZ (V)*1 Type HZ2 Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZ4 A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 Note: Min 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 Max 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 5 5 1.0 100 5 Test Condition IZ (mA) 5 Reverse Current IR (A) Max 25 Test Condition VR (V) 0.5 Dynamic Resistance rd () Max 100 Test Condition IZ (mA) 5
0.5
100
HZ3
0.5
100
HZ5
1.5
100
HZ6
2.0
40
1. Tested with DC.
426
HZ Series (Ta = 25C)

Zener Voltage VZ (V)*1 Type HZ7 Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZ11 A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 -1 -2 -3 -1 -2 -3 -1 -2 -3 Min 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7 10.9 11.1 11.4 11.6 11.9 12.2 12.4 12.6 12.9 13.2 13.5 13.8 14.1 14.5 14.9 15.3 15.7 16.3 16.9 17.5 18.1 Max 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 12.1 12.4 12.7 12.9 13.1 13.4 13.7 14.0 14.3 14.7 15.1 15.5 15.9 16.5 17.1 17.7 18.3 19.0 5 1 7.5 25 5 Test Condition IZ (mA) 5 Reverse Current IR (A) Max 1 Test Condition VR (V) 3.5 Dynamic Resistance rd () Max 15 Test Condition IZ (mA) 5
HZ9
5.0
20
HZ12
9.5
35
HZ15
11.0
40
HZ16
12.0
45
HZ18
13.0
55
Note:
1. Tested with DC.
427
HZ Series (Ta = 25C)

Zener Voltage VZ (V)*1 Type HZ20 Grade -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 Min 18.8 19.5 20.2 20.9 21.6 22.3 22.9 23.6 24.3 25.2 26.2 27.2 28.2 29.2 30.2 31.2 32.2 33.2 34.2 35.3 36.4 Max 19.7 20.4 21.1 21.9 22.6 23.3 24.0 24.7 25.5 26.6 27.6 28.6 29.6 30.6 31.6 32.6 33.6 34.6 35.7 36.8 38.0 Test Condition IZ (mA) 2 Reverse Current IR (A) Max 1 Test Condition VR (V) 15.0 Dynamic Resistance rd () Max 60 Test Condition IZ (mA) 2
HZ22
17.0
65
HZ24
19.0
70
HZ27
21.0
80
HZ30
23.0
100
HZ33
25.0
120
HZ36
27.0
140
Notes: 1. Tested with DC. 2. Type No. is as follows; HZ2B1, HZ2B2, HZ36-3.
428
HZ Series
HZ6B2 HZ7B2 HZ9B2 HZ11B2 HZ12B2
HZ22-2
HZ24-2
HZ27-2
HZ30-2
HZ33-2
HZ15-2 HZ16-2
10-2
10-3
10-4
10-5
10-6
10-7
10
-8
HZ2B2 HZ3B2 HZ4B2 HZ5B2
10
15
HZ18-2
HZ20-2
20
25
30
35
HZ36-2
40
Zener Voltage Temperature Coefficient Z (mV/ C)
Zener Voltage Temperature Coefficient Z (%/ C)
0.10 0.08 0.06 0.04 0.02 0 0.02 0.04 0.06 0.08 0.10 0 5 mV/C
%/ C
50 40 30 20 10 0 10 20 30 40 50 10 15 20 25 30 35 40 Zener Voltage VZ (V)
500
5 mm 2.5 mm 3 mm
400
Printed circuit board 100 180 1.6t mm Material: paper phenol
300
200
100
Fig.2 Temperature Coefficient vs. Zener voltage
429
HZS Series
Silicon Planar Zener Diode for Stabilized Power Supply
Features
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. Suitable for 5mm-pitch high speed automatic insertion.

HZS Series Package Name : MHD Package Code : GRZZ0002ZC-A Taping Abbreviation (Quantity) TA (5,000 pcs / reel)
B
Part No. Cathode band (Lake Blue)
1. Cathode 2. Anode

(Ta = 25C)
430
HZS Series
(Ta = 25C)
Zener Voltage VZ (V)*1 Type HZS2 Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS4 A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 Min 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 Max 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 5 5 1.0 100 5 Test Condition IZ (mA) 5 Reverse Current IR (A) Max 25 Test Condition VR (V) 0.5 Dynamic Resistance rd () Max 100 Test Condition IZ (mA) 5
0.5
100
HZS3
0.5
100
HZS5
1.5
100
HZS6
2.0
40
Note:
1. Tested with DC.
431
HZS Series (Ta = 25C)

Zener Voltage VZ (V)*1 Type HZS7 Grade A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 -1 -2 -3 -1 -2 -3 -1 -2 -3 Note: Min 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7 10.9 11.1 11.4 11.6 11.9 12.2 12.4 12.6 12.9 13.2 13.5 13.8 14.1 14.5 14.9 15.3 15.7 16.3 16.9 17.5 18.1 Max 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 12.1 12.4 12.7 12.9 13.1 13.4 13.7 14.0 14.3 14.7 15.1 15.5 15.9 16.5 17.1 17.7 18.3 19.0 Test Condition IZ (mA) 5 Reverse Current Test IR (A) Condition Max VR (V) 1 3.5 Dynamic Resistance Test rd () Condition Max IZ (mA) 15 5
HZS9
5.0
20
HZS11
7.5
25
HZS12
9.5
35
HZS15
11.0
40
HZS16
12.0
45
HZS18
13.0
55
1. Tested with DC.
432
HZS Series (Ta = 25C)

Zener Voltage VZ (V)*1 Type HZS20 Grade -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 -1 -2 -3 Min 18.8 19.5 20.2 20.9 21.6 22.3 22.9 23.6 24.3 25.2 26.2 27.2 28.2 29.2 30.2 31.2 32.2 33.2 34.2 35.3 36.4 Max 19.7 20.4 21.1 21.9 22.6 23.3 24.0 24.7 25.5 26.6 27.6 28.6 29.6 30.6 31.6 32.6 33.6 34.6 35.7 36.8 38.0 Test Condition IZ (mA) 2 Reverse Current Test IR (A) Condition Max VR (V) 1 15.0 Dynamic Resistance Test rd () Condition Max IZ (mA) 60 2
HZS22
17.0
65
HZS24
19.0
70
HZS27
21.0
80
HZS30
23.0
100
HZS33
25.0
120
HZS36
27.0
140
Notes: 1. Tested with DC. 2. Type No. is as follows; HZS2B1, HZS2B2, HZS36-3.
433
HZS Series
HZS12B2
102 103
HZS16-2
HZS20-2
HZS24-2
104 105 106 107 108
HZS2B2 HZS4B 2 HZS6B 2
10
15
20
25
HZS30-2
30
35
HZS36-2
HZS9B2
40
0.10 0.08 0.06 0.04 0.02 0 0.02 0.04 0.06 0.08 0.10 0 5 mV/C
%/ C
500
l
2.5 mm 3 mm
400
300
l = 5 mm
200
l = 10 mm (Publication value)
100
50
100
150
200
434
HZK Series
Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
Features
Low leakage, low zener impedance and maximum power dissipation of 500 mW. Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.

HZK Series Package Name : LLD Package Code : GLZZ0002ZA-A Taping Abbreviation (Quantity) TR(2,500 pcs / reel) TL(2,500 pcs / reel) 1 3rd. band 2nd. band 1 3rd. band 2nd. band Cathode band 2 Cathode band 2
1. Cathode 2. Anode

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: With P.C. Board. Symbol Pd * Tj Tstg Value 500 175 55 to +175 Unit mW C C
435
HZK Series
(Ta = 25C)
Zener Voltage VZ (V)*1 Type HZK2 HZK3 Grade B C A B C A B C A B C A B C A B C A B C A B C A B C Min 1.9 2.2 2.5 2.8 31 3.4 3.7 4.0 4.3 4.6 4.9 5.2 5.5 5.8 6.3 6.7 7.2 7.7 8.3 8.9 9.5 10.2 10.9 11.6 12.4 13.2 14.1 15.3 16.9 18.8 20.9 22.9 25.2 28.2 31.2 34.2 Max 2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0 5.3 5.7 6.0 6.4 6.9 7.3 7.9 8.5 9.1 9.7 10.3 11.1 11.9 12.7 13.4 14.3 15.5 17.1 19.0 21.1 23.3 25.5 28.6 31.6 34.6 38.0 Test Condition IZ (mA) 5 5 Reverse Current IR (A) Max 5 5 Test Condition VR (V) 0.5 0.5 Dynamic Resistance rd () Max 100 100 Test Condition IZ (mA) 5 5
HZK4
1.0
100
HZK5
1.5
100
HZK6
40
HZK7
3.5
15
HZK9
20
HZK11
7.5
25
HZK12
9.5
35
HZK15 HZK16 HZK18 HZK20 HZK22 HZK24 HZK27 HZK30 HZK33 HZK36 Note:
5 5 5 2 2 2 2 2 2 2
1 1 1 1 1 1 1 1 1 1
11 12 13 15 17 19 21 23 25 27
40 45 55 60 65 70 80 100 120 140
5 5 5 2 2 2 2 2 2 2
Tested with DC. Type No. is as follows: HZK2B, HZK2C, HZK36.
436
HZK Series
Mark Color Code

Type HZK2B HZK2C HZK3A HZK3B HZK3C HZK4A HZK4B HZK4C HZK5A HZK5B HZK5C HZK6A HZK6B HZK6C HZK7A HZK7B HZK7C HZK9A HZK9B HZK9C HZK11A HZK11B HZK11C HZK12A HZK12B HZK12C HZK15 HZK16 HZK18 HZK20 HZK22 HZK24 HZK27 HZK30 HZK33 HZK36 Cathode Band Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Verdure Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Yellow Green Light Blue Light Blue Light Blue Light Blue Light Blue Light Blue Light Blue Light Blue Light Blue Light Blue Second Band Yellow Ocher Yellow Ocher Pink Pink Pink Orange Orange Orange Yellow Yellow Yellow Verdure Verdure Verdure Yellow Green Yellow Green Yellow Green Purple Purple Purple Light Blue Light Blue Light Blue White White White Black Yellow Ocher Pink Orange Yellow Verdure Yellow Green Purple Light Blue White Third Band Verdure Light Blue Pink Verdure Light Blue Pink Verdure Light Blue Pink Verdure Light Blue Pink Verdure Light Blue Pink Verdure Light Blue Pink Verdure Light Blue Pink Verdure Light Blue Pink Verdure Light Blue Pink Pink Pink Pink Pink Pink Pink Pink Pink Pink
437
HZK Series
HZK5 HZK4 HZK6 HZK16
HZK3
10
HZK9 HZK11 HZK12
HZK15
HZK27
HZK18
HZK20
HZK22
HZK24
HZK7
12
16
20
24
28
HZK30
HZK2
32
HZK33
HZK36
36 40
Zener Voltage Temperature Coefficient z (mV/C)
Zener Voltage Temperature Coefficient z (%/C)
0.10 0.08 0.06 0.04 mV/C 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.10 0 5 %/C
50 40 30 20 10 0 -10 -20 -30 -40 -50 10 15 20 25 30 35 40 Zener Voltage VZ (V)
500
2.5mm 3mm
400
Printed circuit board 15 20 1.6t mm Material: Glass epoxy
300
200
100
438
HZU Series
Silicon Planar Zener Diode for Stabilizer
Features
These diodes are delivered taped.

HZU Series Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel) Cathode mark Mark 1
20

(Ta = 25C)
439
HZU Series
(Ta = 25C)
Zener Voltage VZ (V)*1 Type HZU2.0 HZU2.2 HZU2.4 HZU2.7 Grade B B B B B1 B2 B B1 B2 B B1 B2 B B1 B2 B B1 B2 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 Min 1.90 2.10 2.30 2.50 2.50 2.65 2.80 2.80 2.95 3.10 3.10 3.25 3.40 3.40 3.55 3.70 3.70 3.87 4.01 4.01 4.15 4.28 4.42 4.42 4.55 4.69 4.84 4.84 4.98 5.14 5.31 5.31 5.49 5.67 5.86 5.86 6.06 6.26 6.47 6.47 6.65 6.86 7.06 7.06 7.28 7.52 Max 2.20 2.40 2.60 2.90 2.75 2.90 3.20 3.05 3.20 3.50 3.35 3.50 3.80 3.65 3.80 4.10 3.97 4.10 4.48 4.21 4.34 4.48 4.90 4.61 4.75 4.90 5.37 5.04 5.20 5.37 5.92 5.55 5.73 5.92 6.53 6.12 6.33 6.53 7.14 6.73 6.93 7.14 7.84 7.36 7.60 7.84 Test Condition IZ (mA) 5 5 5 5 Reverse Current IR (A) Max 120 120 120 120 Test Condition VR (V) 0.5 0.7 1.0 1.0 Dynamic Resistance rd () Max 100 100 100 110 Test Condition IZ (mA) 5 5 5 5
HZU3.0
50
1.0
120
HZU3.3
20
1.0
130
HZU3.6
10
1.0
130
HZU3.9
10
1.0
130
HZU4.3
10
1.0
130
HZU4.7
10
1.0
130
HZU5.1
1.5
130
HZU5.6
2.5
80
HZU6.2
3.0
50
HZU6.8
3.5
30
HZU7.5
4.0
30
Note:
1. Tested with pulse (PW = 40 ms)
440
HZU Series (Ta = 25C)

Zener Voltage VZ (V)*1 Min Max 7.76 8.64 7.76 8.10 8.02 8.36 8.28 8.56 8.56 8.85 9.15 9.45 9.45 9.77 10.11 10.44 10.44 10.76 11.10 11.42 11.42 11.74 12.08 12.47 12.47 12.91 13.37 13.84 13.84 14.34 14.85 15.37 15.37 15.58 16.35 16.94 16.94 17.56 18.21 18.86 18.86 19.52 20.21 20.88 20.88 21.54 22.23 22.93 22.93 23.72 24.54 8.64 9.55 8.93 9.23 9.55 10.55 9.87 10.21 10.55 11.56 10.88 11.22 11.56 12.60 11.90 12.24 12.60 13.96 13.03 13.49 13.96 15.52 14.46 14.98 15.52 17.09 16.01 16.51 17.09 19.03 17.70 18.35 19.03 21.08 19.70 20.39 21.08 23.17 21.77 22.47 23.17 25.57 23.96 24.78 25.57 5 2 9.0 35 5 Test Condition IZ (mA) 5 Reverse Current IR (A) Max 2 Test Condition VR (V) 5.0 Dynamic Resistance rd () Max 30 Test Condition IZ (mA) 5
Type HZU8.2
Grade B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3 B B1 B2 B3
HZU9.1
6.0
30
HZU10
7.0
30
HZU11
8.0
30
HZU12
HZU13
10.0
35
HZU15
11.0
40
HZU16
12.0
40
HZU18
13.0
45
HZU20
15.0
50
HZU22
17.0
55
HZU24
19.0
60
Note:
1. Tested with pulse (PW = 40 ms)
441
HZU Series (Ta = 25C)

Zener Voltage VZ (V)*1 Min Max 25.10 28.90 28.00 32.00 31.00 35.00 34.00 38.00 Test Condition IZ (mA) 2 2 2 2 Reverse Current IR (A) Max 2 2 2 2 Test Condition VR (V) 21.0 23.0 25.0 27.0 Dynamic Resistance rd () Max 70 80 80 90 Test Condition IZ (mA) 2 2 2 2
Type HZU27 HZU30 HZU33 HZU36 Note:
Grade B B B B
1. Tested with pulse (PW = 40 ms).
Mark Code
Type HZU2.0 HZU2.2 HZU2.4 HZU2.7 HZU3.0 HZU3.3 Grade B B B B1 B2 B1 B2 Mark No. 20 22 24 27 27 30 30 Type HZU6.2 Grade B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 Mark No. 62 62 62 68 68 68 75 75 75 82 82 82 91 91 91 10 10 10 11 11 11 12 12 12 Type HZU13 Grade B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B B B B Mark No. 13 13 13 15 15 15 16 16 16 18 18 18 20 20 20 22 22 22 24 24 24 27 30 33 36
HZU6.8
HZU15
HZU7.5
HZU16
B1 33 B2 33 HZU3.6 B1 36 B2 36 HZU3.9 B1 39 B2 39 HZU4.3 B1 43 B2 43 B3 43 HZU4.7 B1 47 B2 47 B3 47 HZU5.1 B1 51 B2 51 B3 51 HZU5.6 B1 56 B2 56 B3 56 Notes: 1. Example of Marking

(1) One grade type (B)
HZU8.2
HZU18
HZU9.1
HZU20
HZU10
HZU22
HZU11
HZU24
HZU12
HZU27 HZU30 HZU33 HZU36
(2) Two grade type (B1,B2)
(3) Three grade type (B1,B2,B3) Center Upper
Lower
20
HZU2.0B
30
HZU30B
30
HZU3.0B1
30
HZU3.0B2
43
HZU4.3B1
43
HZU4.3B2
43
HZU4.3B3
2. 3. 4. 5.
The grade B type includes from B1 min. to B3 (or B2) max. B grade is standard and has better delivery, these are marked one of B1, B2, B3. Type No. is as follows; HZU2.0B, HZU2.2B, HZU36B. (B grade) Type No. is as follows; HZU2.7B1, HZU2.7B2, HZU24B3. (B 1, B2, B3 grade)
442
HZU Series
HZU2.4 HZU3.0 HZU3.6 HZU4.3 HZU5.1 HZU6.2 HZU7.5 HZU8.2 HZU9.1 HZU10 HZU12 HZU13 HZU16 HZU18
10 8
HZU2.0
HZU6.8
HZU15
HZU11
HZU20 HZU22 HZU24
HZU27
HZU30
HZU33
12
16
20
24
28
32
HZU36
36
40
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage 0.10 0.08 Zener Voltage Temperature Coefficient Z (%/ C) 0.06 0.04 0.02 0 0.02 0.04 0.06 0.08 0.10 0 5 mV/C
%/ C
50 40 Zener Voltage Temperature Coefficient Z (mV/ C) 30 20 10 0 10 20 30 40 50 10 15 20 25 30 35 40 Zener Voltage VZ (V)
250
1.5mm 0.8mm
200
Cu Foil
Printed circuit board
150
5201.6t mm
Material: Glass Epoxy Resin+Cu Foil
100
50
50
100
150
0.8mm
200
443
RKZ-KG Series
Silicon Planar Zener Diode for Surge Absorption and Stabilizer
Features
These diodes are delivered taped. Lineup of environmental friendly Halogen free type (RKZ-KG-P6 Series 6:Pb free & Halogen free).

RKZ-KG Series RKZ-KG P6 Series (Halogen-free type) Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) P (3,000 pcs / reel) Cathode mark Mark 1
20

(Ta = 25C)
444
RKZ-KG Series
(Ta = 25C)
Zener Voltage VZ (V) *1 Min Max 1.90 2.10 2.30 2.65 2.95 3.25 3.55 3.87 4.15 4.55 4.98 5.49 6.06 6.65 7.28 8.02 8.85 9.77 10.76 11.74 12.91 14.34 15.85 17.56 19.52 21.54 23.72 25.10 28.00 31.00 34.00 2.20 2.40 2.60 2.90 3.20 3.50 3.80 4.10 4.34 4.75 5.20 5.73 6.33 6.93 7.60 8.36 9.23 10.21 11.22 12.24 13.49 14.98 16.51 18.35 20.39 22.47 24.78 28.90 32.00 35.00 38.00 Test Condition IZ (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 Reverse Current IR (A) Max 120 120 120 120 50 20 10 10 10 10 5 5 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 Test Condition VR (V) 0.5 0.7 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 Dynamic Resistance rd () Max 100 100 100 110 120 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 35 40 40 45 50 55 60 70 80 80 90 Test Condition IZ (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 ESD-Capability *2 (kV) *2 Min 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 25 25 25 20 20 15 15 13 8 8
Part No. RKZ2.0BKG RKZ2.2BKG RKZ2.4BKG RKZ2.7B2KG RKZ3.0B2KG RKZ3.3B2KG RKZ3.6B2KG RKZ3.9B2KG RKZ4.3B2KG RKZ4.7B2KG RKZ5.1B2KG RKZ5.6B2KG RKZ6.2B2KG RKZ6.8B2KG RKZ7.5B2KG RKZ8.2B2KG RKZ9.1B2KG RKZ10B2KG RKZ11B2KG RKZ12B2KG RKZ13B2KG RKZ15B2KG RKZ16B2KG RKZ18B2KG RKZ20B2KG RKZ22B2KG RKZ24B2KG RKZ27BKG RKZ30BKG RKZ33BKG RKZ36BKG
Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 , Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec
445
RKZ-KG Series
Mark Code
Part No. RKZ2.0BKG RKZ2.2BKG RKZ2.4BKG RKZ2.7B2KG RKZ3.0B2KG RKZ3.3B2KG RKZ3.6B2KG RKZ3.9B2KG RKZ4.3B2KG RKZ4.7B2KG RKZ5.1B2KG RKZ5.6B2KG RKZ6.2B2KG RKZ6.8B2KG RKZ7.5B2KG RKZ8.2B2KG Note: Mark No. 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 Part No. RKZ9.1B2KG RKZ10B2KG RKZ11B2KG RKZ12B2KG RKZ13B2KG RKZ15B2KG RKZ16B2KG RKZ18B2KG RKZ20B2KG RKZ22B2KG RKZ24B2KG RKZ27BKG RKZ30BKG RKZ33BKG RKZ36BKG Mark No. 91 10 11 12 13 15 16 18 20 22 24 27 30 33 36
Example of Marking
20
RKZ2.0BKG
10
RKZ10B2KG
446
RKZ-KG Series
RKZ2.4BKG RKZ3.0B2KG RKZ3.6B2KG RKZ4.3B2KG RKZ5.1B2KG RKZ6.8B2KG RKZ7.5B2KG RKZ8.2B2KG RKZ9.1B2KG RKZ10B2KG RKZ11B2KG RKZ12B2KG RKZ13B2KG RKZ15B2KG RKZ16B2KG RKZ18B2KG
RKZ20B2KG
10
RKZ6.2B2KG
RKZ2.0BKG
RKZ22B2KG
RKZ24B2KG
RKZ27BKG
RKZ30BKG
RKZ33BKG
0 0
12
16
20
24
28
32
RKZ36BKG
36
40
0.10 0.08
%/ C
50 40
250
Zener Voltage Temperature Coefficient Z (mV/C)
Zener Voltage Temperature Coefficient Z (%/C)
0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.10 0 5 mV/C
30 20 10 0 -10 -20 -30 -40 -50 10 15 20 25 30 35 40 Zener Voltage VZ (V)
200
1.5
150
3.0
1.5
unit: mm
100
50
50
100
150
0.8
200
447
RKZ-KG Series
100 PRSM
RKZ3.9B2KG RKZ5.6B2KG RKZ15B2KG
10
1.0
0.1
1.0 Time t (s)
10
100
Fig.4 Surge Reverse Power Ratings(Reference data)
448
RKZ-KJ Series
Features
Emboss Taping Reel Pack.

RKZ-KJ Series
Package Name : UFP Package Code: PWSF0002ZA-A Taping Abbreviation (Quantity) P (4,000 pcs / reel) R (8,000 pcs / reel)
Cathode mark Mark 1
20
1. Cathode 2. Anode

(Ta = 25C)
449
RKZ-KJ Series
(Ta = 25C)
Part No. RKZ2.0BKJ RKZ2.2BKJ RKZ2.4BKJ RKZ2.7B2KJ RKZ3.0B2KJ RKZ3.3B2KJ RKZ3.6B2KJ RKZ3.9B2KJ RKZ4.3B2KJ RKZ4.7B2KJ RKZ5.1B2KJ RKZ5.6B2KJ RKZ6.2B2KJ RKZ6.8B2KJ RKZ7.5B2KJ RKZ8.2B2KJ RKZ9.1B2KJ RKZ10B2KJ RKZ11B2KJ RKZ12B2KJ RKZ13B2KJ RKZ15B2KJ RKZ16B2KJ RKZ18B2KJ RKZ20B2KJ RKZ22B2KJ RKZ24B2KJ RKZ27BKJ RKZ30BKJ RKZ33BKJ RKZ36BKJ
Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 , Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec 3. The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.
450
RKZ-KJ Series
Mark Code
Part No. RKZ2.0BKJ RKZ2.2BKJ RKZ2.4BKJ RKZ2.7B2KJ RKZ3.0B2KJ RKZ3.3B2KJ RKZ3.6B2KJ RKZ3.9B2KJ RKZ4.3B2KJ RKZ4.7B2KJ RKZ5.1B2KJ RKZ5.6B2KJ RKZ6.2B2KJ RKZ6.8B2KJ RKZ7.5B2KJ RKZ8.2B2KJ Note: Mark No. 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 Part No. RKZ9.1B2KJ RKZ10B2KJ RKZ11B2KJ RKZ12B2KJ RKZ13B2KJ RKZ15B2KJ RKZ16B2KJ RKZ18B2KJ RKZ20B2KJ RKZ22B2KJ RKZ24B2KJ RKZ27BKJ RKZ30BKJ RKZ33BKJ RKZ36BKJ Mark No. 91 10 11 12 13 15 16 18 20 22 24 27 30 33 36
Example of Marking
20
RKZ2.0BKJ
10
RKZ10B2KJ
451
RKZ-KJ Series
RKZ2.4BKJ RKZ3.0B2KJ RKZ3.6B2KJ RKZ4.3B2KJ RKZ5.1B2KJ RKZ6.8B2KJ RKZ7.5B2KJ RKZ8.2B2KJ RKZ9.1B2KJ RKZ10B2KJ RKZ11B2KJ RKZ12B2KJ RKZ13B2KJ RKZ15B2KJ RKZ16B2KJ RKZ18B2KJ
RKZ20B2KJ
10
RKZ6.2B2KJ
RKZ2.0BKJ
RKZ22B2KJ
RKZ24B2KJ
RKZ27BKJ
RKZ30BKJ
RKZ33BKJ
0 0
12
16
20
24
28
32
RKZ36BKJ
36
40
0.10 0.08
%/ C
50 40
250
0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.10 0 5 10 15 20 25 30 mV/C
30 20 10 0 -10 -20 -30 -40 -50 35 40
200
1.5
150
3.0
1.5
unit: mm
100
50
50
100
150
Zener Voltage VZ (V) Fig.2 Temperature Coefficient vs. Zener voltage
452
0.8
200
RKZ-KJ Series
100 PRSM
RKZ3.9B2KJ RKZ5.6B2KJ RKZ15B2KJ RKZ36BKJ
10
1.0
0.1
1.0 Time t (ms)
10
100
Fig.4 Surge Reverse Power Ratings(Reference data)
453
RKZ-KK Series
Features

RKZ-KK Series
Cathode mark Mark 1
C1

(Ta = 25C)
454
RKZ-KK Series
(Ta = 25C)
Part No. RKZ2.0BKK RKZ2.2BKK RKZ2.4BKK RKZ2.7B2KK RKZ3.0B2KK RKZ3.3B2KK RKZ3.6B2KK RKZ3.9B2KK RKZ4.3B2KK RKZ4.7B2KK RKZ5.1B2KK RKZ5.6B2KK RKZ6.2B2KK RKZ6.8B2KK RKZ7.5B2KK RKZ8.2B2KK RKZ9.1B2KK RKZ10B2KK RKZ11B2KK RKZ12B2KK RKZ13B2KK RKZ15B2KK RKZ16B2KK RKZ18B2KK RKZ20B2KK RKZ22B2KK RKZ24B2KK RKZ27BKK RKZ30BKK RKZ33BKK RKZ36BKK
Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 , Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec 3. The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.
455
RKZ-KK Series
Mark Code
Part No. RKZ2.0BKK RKZ2.2BKK RKZ2.4BKK RKZ2.7B2KK RKZ3.0B2KK RKZ3.3B2KK RKZ3.6B2KK RKZ3.9B2KK RKZ4.3B2KK RKZ4.7B2KK RKZ5.1B2KK RKZ5.6B2KK RKZ6.2B2KK RKZ6.8B2KK RKZ7.5B2KK RKZ8.2B2KK Note: Mark No. C1 C2 C3 C5 C7 C9 D2 D4 D6 D9 E3 E6 E9 F3 F6 F9 Part No. RKZ9.1B2KK RKZ10B2KK RKZ11B2KK RKZ12B2KK RKZ13B2KK RKZ15B2KK RKZ16B2KK RKZ18B2KK RKZ20B2KK RKZ22B2KK RKZ24B2KK RKZ27BKK RKZ30BKK RKZ33BKK RKZ36BKK Mark No. G3 G6 G9 J3 J6 J9 M3 M6 M9 P3 P6 P8 P9 N4 N5
Example of Marking
C1
RKZ2.0BKK
N5
RKZ36BKK
456
RKZ-KK Series
RKZ2.4BKK RKZ3.0B2KK RKZ3.6B2KK RKZ4.3B2KK RKZ5.1B2KK RKZ6.8B2KK RKZ7.5B2KK RKZ8.2B2KK RKZ9.1B2KK RKZ10B2KK RKZ11B2KK RKZ12B2KK RKZ13B2KK RKZ15B2KK RKZ16B2KK RKZ18B2KK
RKZ20B2KK
10
RKZ6.2B2KK RKZ2.0BKK
8
RKZ22B2KK
RKZ24B2KK
RKZ27BKK
RKZ30BKK
RKZ33BKK
0 0
12
16
20
24
28
32
RKZ36BKK
36
40
0.10 0.08
50
%/ C
250
40
0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.10 0 5 10 15 20 25 30 mV/C
30 20 10 0 -10 -20 -30 -40 -50 35 40
200
3.0
1.5
150
1.5
unit: mm
100
50
50
100
150
0.8
200
457
RKZ-KL Series
Features

RKZ-KL Sirees Package Name : EFP Package Code: PXSF0002ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel) Cathode mark Mark 1
C1

(Ta = 25C)
458
RKZ-KL Series
(Ta = 25C)
Part No. RKZ2.0BKL RKZ2.2BKL RKZ2.4BKL RKZ2.7B2KL RKZ3.0B2KL RKZ3.3B2KL RKZ3.6B2KL RKZ3.9B2KL RKZ4.3B2KL RKZ4.7B2KL RKZ5.1B2KL RKZ5.6B2KL RKZ6.2B2KL RKZ6.8B2KL RKZ7.5B2KL RKZ8.2B2KL RKZ9.1B2KL RKZ10B2KL RKZ11B2KL RKZ12B2KL RKZ13B2KL RKZ15B2KL RKZ16B2KL RKZ18B2KL RKZ20B2KL RKZ22B2KL RKZ24B2KL RKZ27BKL RKZ30BKL RKZ33BKL RKZ36BKL
Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 , Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec 3. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.
459
RKZ-KL Series
Mark Code
Part No. RKZ2.0BKL RKZ2.2BKL RKZ2.4BKL RKZ2.7B2KL RKZ3.0B2KL RKZ3.3B2KL RKZ3.6B2KL RKZ3.9B2KL RKZ4.3B2KL RKZ4.7B2KL RKZ5.1B2KL RKZ5.6B2KL RKZ6.2B2KL RKZ6.8B2KL RKZ7.5B2KL RKZ8.2B2KL Note: Mark No. C1 C2 C3 C5 C7 C9 D2 D4 D6 D9 E3 E6 E9 F3 F6 F9 Part No. RKZ9.1B2KL RKZ10B2KL RKZ11B2KL RKZ12B2KL RKZ13B2KL RKZ15B2KL RKZ16B2KL RKZ18B2KL RKZ20B2KL RKZ22B2KL RKZ24B2KL RKZ27BKL RKZ30BKL RKZ33BKL RKZ36BKL Mark No. G3 G6 G9 J3 J6 J9 M3 M6 M9 P3 P6 P8 P9 N4 N5
Example of Marking
C1
RKZ2.0BKL
N5
RKZ36BKL
460
RKZ-KL Series
RKZ2.4BKL RKZ3.0B2KL RKZ3.6B2KL RKZ4.3B2KL RKZ5.1B2KL RKZ6.8B2KL RKZ7.5B2KL RKZ8.2B2KL RKZ9.1B2KL RKZ10B2KL RKZ11B2KL RKZ12B2KL RKZ13B2KL RKZ15B2KL RKZ16B2KL RKZ18B2KL
RKZ20B2KL
10
RKZ6.2B2KL
RKZ2.0BKL
RKZ22B2KL
RKZ24B2KL
RKZ27BKL
RKZ30BKL
RKZ33BKL
0 0
12
16
20
24
28
32
RKZ36BKL
36
40
0.10 0.08
%/ C
50 40
250
0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.10 0 5 mV/C
30 20 10 0 -10 -20 -30 -40 -50 10 15 20 25 30 35 40 Zener Voltage VZ (V)
200
1.5
150
3.0
1.5
unit: mm
100
50
50
100
150
0.8
200
461
HZ-L Series
Silicon Planar Zener Diode for Low Noise Application
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide voltage range from 5.2 V through 38 V of zener voltage provide flexible application.

HZ-L Series Package Name : DO-35 Package Code : GRZZ0002ZB-A Taping Abbreviation (Quantity) TA (5,000 pcs / reel) 1
7 B2
1. Cathode 2 2. Anode Body color is orange Part No. Cathode band (Navy Blue)

(Ta = 25C)
462
HZ-L Series
(Ta = 25C)
Zener Voltage VZ (V) *1 Part No. HZ6A1L HZ6A2L HZ6A3L HZ6B1L HZ6B2L HZ6B3L HZ6C1L HZ6C2L HZ6C3L HZ7A1L HZ7A2L HZ7A3L HZ7B1L HZ7B2L HZ7B3L HZ7C1L HZ7C2L HZ7C3L HZ9A1L HZ9A2L HZ9A3L HZ9B1L HZ9B2L HZ9B3L HZ9C1L HZ9C2L HZ9C3L HZ11A1L HZ11A2L HZ11A3L HZ11B1L HZ11B2L HZ11B3L HZ11C1L HZ11C2L HZ11C3L Note: 1. Tested with DC. Min 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7 10.9 11.1 11.4 Max 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 Test Condition IZ (mA) 0.5 Reverse Current IR (A) Max 1 Test Condition VR (V) 2.0 Dynamic Resistance rd () Max 150 Test Condition IZ (mA) 0.5
0.5
2.0
80
0.5
0.5
2.0
60
0.5
0.5
3.5
60
0.5
0.5
6.0
60
0.5
0.5
8.0
80
0.5
463
HZ-L Series (Ta = 25C)

Zener Voltage VZ (V) *1 Part No. HZ12A1L HZ12A2L HZ12A3L HZ12B1L HZ12B2L HZ12B3L HZ12C1L HZ12C2L HZ12C3L HZ15-1L HZ15-2L HZ15-3L HZ16-1L HZ16-2L HZ16-3L HZ18-1L HZ18-2L HZ18-3L HZ20-1L HZ20-2L HZ20-3L HZ22-1L HZ22-2L HZ22-3L HZ24-1L HZ24-2L HZ24-3L HZ27-1L HZ27-2L HZ27-3L HZ30-1L HZ30-2L HZ30-3L HZ33-1L HZ33-2L HZ33-3L HZ36-1L HZ36-2L HZ36-3L Note: 1. Tested with DC. Min 11.6 11.9 12.2 12.4 12.6 12.9 13.2 13.5 13.8 14.1 14.5 14.9 15.3 15.7 16.3 16.9 17.5 18.1 18.8 19.5 20.2 20.9 21.6 22.3 22.9 23.6 24.3 25.2 26.2 27.2 28.2 29.2 30.2 31.2 32.2 33.2 34.2 35.3 36.4 Max 12.1 12.4 12.7 12.9 13.1 13.4 13.7 14.0 14.3 14.7 15.1 15.5 15.9 16.5 17.1 17.7 18.3 19.0 19.7 20.4 21.1 21.9 22.6 23.3 24.0 24.7 25.5 26.6 27.6 28.6 29.6 30.6 31.6 32.6 33.6 34.6 35.7 36.8 38.0 Test Condition IZ (mA) 0.5 Reverse Current IR (A) Max 1 Test Condition VR (V) 10.5 Dynamic Resistance rd () Max 80 Test Condition IZ (mA) 0.5
0.5
13.0
80
0.5
0.5
14.0
80
0.5
0.5
15.0
80
0.5
0.5
18.0
100
0.5
0.5
20.0
100
0.5
0.5
22.0
120
0.5
0.5
24.0
150
0.5
0.5
27.0
200
0.5
0.5
30.0
250
0.5
0.5
33.0
300
0.5
464
HZ-L Series
102
HZ12B2L HZ20-1L HZ6B2L HZ9B2L
103
HZ16-2L
HZ24-2L
HZ30-2L
104 105 106 107 108
10
15
20
25
30
35
HZ36-2L
40
0.10 0.08 0.06 0.04 0.02 0 0.02 0.04 0.06 0.08 0.10 0 5 mV/C %/C
500
l
2.5 mm 3 mm
400
300
l = 5 mm
200
l = 10 mm l = 20 mm (Publication value)
100
50
100
150
200
465
HZ-LL Series
Silicon Planar Zener Diode for Hard Knee Low Noise
Features
VZ-IZ characteristics are semi logarithmic linear from IZ = 1 nA to 1 mA and have sharper breakdown knees in a low current region, and also lower VZ temperature coefficients. Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners).

HZ-LL Series Package Name : DO-35 Package Code : GRZZ0002ZB-A Taping Abbreviation (Quantity) TA (5,000 pcs / reel)
2 Body color is Verdure Part No. Cathode band(Navy blue)
2 A
1. Cathode 2. Anode

(Ta = 25C)
tem Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 250 175 55 to +175 Unit mW C C
(Ta = 25C)
Zener Voltage VZ(V) *1 Part No. Min Max IZ (mA) Reverse Current IR (nA) Max VR (V) Max Dynamic Resistance ZZT () IZT (mA) ZZK ()*2 Typ IZK (A) Linearity*3 VZ1 (V) Max VZ2(V) Max
HZ2ALL HZ2BLL HZ2CLL HZ3ALL HZ3BLL HZ3CLL HZ4ALL HZ4BLL HZ4CLL HZ5ALL HZ5BLL HZ5CLL
1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.3 4.6 4.9
2.0 2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0 5.3
0.5
100
0.5
350
0.5
(1.2)
50
0.5
0.6
0.5
100
1.0
360
0.5
(1.2)
50
0.5
0.6
0.5
100
2.0
370
0.5
(1.5)
50
0.5
0.6
0.5
100
3.0
380
0.5
(1.5)
50
0.5
0.6
Notes: 1. Tested with DC. 2. Reference only. 3. VZ1 = VZ (IZ = 0.5 mA) VZ1 (Iz = 0.05 mA)
VZ2 = VZ1 (IZ = 0.05 mA) VZ2 (Iz = 0.001 mA)
466
HZ-LL Series
Zener Voltage Temperature Coefficient Z (mV/C) Zener Voltage Temperature Coefficient Z (%/C)
102
HZ2BLL HZ3BLL HZ4BLL HZ5BLL
-0.01
103 104
-0.02 mV/C -0.03 %/C
-0.5
105 106 107 108 109 1010
-1.0
-0.04
-1.5
-0.05
-2.0 1 2 3 4 5 Zener Voltage VZ (V) 6
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage 250
5mm 2.5 mm
200
3 mm
Printed circuit board 100 1801.6t mm Material: paper phenol
150
100
50
50
100
150
200
467
HZS-L Series
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide voltage range from 5.2 V through 38 V of zener voltage provide flexible application. Suitable for 5mm-pitch high speed automatic insertion.

HZS-L Series Package Name : MHD Package Code : GRZZ0002ZC-A Taping Abbreviation (Quantity) TA (5,000 pcs / reel)
B
Part No. Cathode band (Black)
1. Cathode 2. Anode

(Ta = 25C)
468
HZS-L Series
(Ta = 25C)
Zener Voltage VZ (V) *1 Part No. HZS6A1L HZS6A2L HZS6A3L HZS6B1L HZS6B2L HZS6B3L HZS6C1L HZS6C2L HZS6C3L HZS7A1L HZS7A2L HZS7A3L HZS7B1L HZS7B2L HZS7B3L HZS7C1L HZS7C2L HZS7C3L HZS9A1L HZS9A2L HZS9A3L HZS9B1L HZS9B2L HZS9B3L HZS9C1L HZS9C2L HZS9C3L HZS11A1L HZS11A2L HZS11A3L HZS11B1L HZS11B2L HZS11B3L HZS11C1L HZS11C2L HZS11C3L HZS12A1L HZS12A2L HZS12A3L HZS12B1L HZS12B2L HZS12B3L HZS12C1L HZS12C2L HZS12C3L Note: 1. Tested with DC. Min 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7 10.9 11.1 11.4 11.6 11.9 12.2 12.4 12.6 12.9 13.2 13.5 13.8 Max 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 12.1 12.4 12.7 12.9 13.1 13.4 13.7 14.0 14.3 Test Condition IZ (mA) 0.5 Reverse Current IR (A) Max 1 Test Condition VR (V) 2.0 Dynamic Resistance rd () Max 150 Test Condition IZ (mA) 0.5
0.5
2.0
80
0.5
0.5
2.0
60
0.5
0.5
3.5
60
0.5
0.5
6.0
60
0.5
0.5
8.0
80
0.5
0.5
10.5
80
0.5
469
HZS-L Series (Ta = 25C)

Zener Voltage VZ (V) *1 Part No. HZS15-1L HZS15-2L HZS15-3L HZS16-1L HZS16-2L HZS16-3L HZS18-1L HZS18-2L HZS18-3L HZS20-1L HZS20-2L HZS20-3L HZS22-1L HZS22-2L HZS22-3L HZS24-1L HZS24-2L HZS24-3L HZS27-1L HZS27-2L HZS27-3L HZS30-1L HZS30-2L HZS30-3L HZS33-1L HZS33-2L HZS33-3L HZS36-1L HZS36-2L HZS36-3L Note: 1. Tested with DC. Min 14.1 14.5 14.9 15.3 15.7 16.3 16.9 17.5 18.1 18.8 19.5 20.2 20.9 21.6 22.3 22.9 23.6 24.3 25.2 26.2 27.2 28.2 29.2 30.2 31.2 32.2 33.2 34.2 35.3 36.4 Max 14.7 15.1 15.5 15.9 16.5 17.1 17.7 18.3 19.0 19.7 20.4 21.1 21.9 22.6 23.3 24.0 24.7 25.5 26.6 27.6 28.6 29.6 30.6 31.6 32.6 33.6 34.6 35.7 36.8 38.0 Test Condition IZ (mA) 0.5 Reverse Current IR (A) Max 1 Test Condition VR (V) 13.0 Dynamic Resistance rd () Max 80 Test Condition IZ (mA) 0.5
0.5
14.0
80
0.5
0.5
15.0
80
0.5
0.5
18.0
100
0.5
0.5
20.0
100
0.5
0.5
22.0
120
0.5
0.5
24.0
150
0.5
0.5
27.0
200
0.5
0.5
30.0
250
0.5
0.5
33.0
300
0.5
470
HZS-L Series
102
HZS12B2L
HZS20-2L
103
HZS16-2L
HZS24-2L
HZS6B2L
HZS9B2L
HZS30-2L
104 105 106 107 108
10
15
20
25
30
35
HZS36-2L
40
0.10 0.08 0.06 0.04

mV/C %/C
50 40 30 20 10 0 10 20 30 40 0 5 50 10 15 20 25 30 35 40 Zener Voltage VZ (V)
500
l
2.5 mm 3 mm
400
Printed circuit board 100 180 1.6t mm Quality: paper phenol
0.02 0 0.02 0.04 0.06 0.08 0.10
300
l = 5 mm
200
l = 10 mm (Publication value)
100
50
100
150
200
471
HZS-LL Series
Features
Vz-Iz characteristics are semilogarithmic linear from IZ = 1 nA to 1 mA and have sharper breakdown knees in a low current region, and also lower VZ temperature coefficients. Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners). Suitable for 5 mm-pitch high speed automatic insertion.

HZS-LL Series Package Name : MHD Package Code : GRZZ0002ZC-A Taping Abbreviation (Quantity) TA (5,000 pcs / reel)
2 A
2 Part No. Cathode band (Navy blue)
1. Cathode 2. Anode

(Ta = 25C)
tem Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 250 175 55 to +175 Unit mW C C
472
HZS-LL Series
(Ta = 25C)
HZS2ALL HZS2BLL HZS2CLL HZS3ALL HZS3BLL HZS3CLL HZS4ALL HZS4BLL HZS4CLL HZS5ALL HZS5BLL HZS5CLL
1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.3 4.6 4.9
2.0 2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0 5.3
0.5
100
0.5
350
0.5
(1.2)
50
0.5
0.6
0.5
100
1.0
360
0.5
(1.2)
50
0.5
0.6
0.5
100
2.0
370
0.5
(1.5)
50
0.5
0.6
0.5
100
3.0
380
0.5
(1.5)
50
0.5
0.6
VZ2 = VZ1 (IZ = 0.05 mA) VZ2 (Iz = 0.001 mA)
473
HZS-LL Series
102
HZS2BLL HZS3BLL HZS4BLL HZS5BLL
-0.01
103 104
-0.02
mV/C %/C
-0.5
105 106 107 108 109 1010
-0.03
-1.0
-0.04
-1.5
-0.05
-2.0
250
5mm 2.5 mm
200
3 mm
Printed circuit board 100 180 1.6t mm Quality: paper phenol
150
100
50
50
100
150
200
474
HZK-L Series
Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
Features
Low leakage, low zener impedance and maximum power dissipation of 400 mW. Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.

HZK-L Series Package Name : LLD Package Code : GLZZ0002ZA-A Taping Abbreviation (Quantity) TR(2,500 pcs / reel) TL(2,500 pcs / reel) 1 3rd. band 2nd. band 1 3rd. band 2nd. band Cathode band 2 Cathode band 2
1. Cathode 2. Anode

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: With P.C. Board. Symbol Pd Tj Tstg Value 400 175 55 to +175 Unit mW C C
475
HZK-L Series
(Ta = 25C)
Zener Voltage VZ (V) *1 Part No. HZK6AL HZK6BL HZK6CL HZK7AL HZK7BL HZK7CL HZK9AL HZK9BL HZK9CL HZK11AL HZK11BL HZK11CL HZK12AL HZK12BL HZK12CL HZK15L HZK16L HZK18L HZK20L HZK22L HZK24L HZK27L HZK30L HZK33L HZK36L Note: Min 5.2 5.5 5.8 6.3 6.7 7.2 7.7 8.3 8.9 9.5 10.2 10.9 11.6 12.4 13.2 14.1 15.3 16.9 18.8 20.9 22.9 25.2 28.2 31.2 34.2 Max 5.7 6.0 6.4 6.9 7.3 7.9 8.5 9.1 9.7 10.3 11.1 11.9 12.7 13.4 14.3 15.5 17.1 19.0 21.1 23.3 25.5 28.6 31.6 34.6 38.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1 1 1 1 1 1 1 1 1 1 13.0 14.0 15.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 80 80 80 100 100 120 150 200 250 300 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1 10.5 80 0.5 0.5 1 8.0 80 0.5 0.5 1 6.0 60 0.5 0.5 1 3.5 Test Condition IZ (mA) 0.5 Reverse Current IR (A) Max 1 Test Condition VR (V) 2.0 Dynamic Resistance rd () Max 150 80 60 60 0.5 Test Condition IZ (mA) 0.5
Tested with DC. Type No. is as follows: HZK6AL, HZK6BL, HZK36L.
476
HZK-L Series
Mark Color Code

Type HZK6AL HZK6BL HZK6CL HZK7AL HZK7BL HZK7CL HZK9AL HZK9BL HZK9CL HZK11AL HZK11BL HZK11CL HZK12AL HZK12BL HZK12CL HZK15L HZK16L HZK18L HZK20L HZK22L HZK24L HZK27L HZK30L HZK33L HZK36L HZK30L HZK33L HZK36L Cathode Band Orange Orange Orange Orange Orange Orange Orange Orange Orange Orange Orange Orange Orange Orange Orange Yellow Yellow Yellow Yellow Yellow Yellow Yellow Yellow Yellow Yellow Yellow Yellow Yellow Second Band Verdure Verdure Verdure Yellow Green Yellow Green Yellow Green Purple Purple Purple Light Blue Light Blue Light Blue White White White Black Yellow Ocher Pink Orange Yellow Verdure Yellow Green Purple Light Blue White Purple Light Blue White Third Band Pink Verdure Light Blue Pink Verdure Light Blue Pink Verdure Light Blue Pink Verdure Light Blue Pink Verdure Light Blue Pink Pink Pink Pink Pink Pink Pink Pink Pink Pink Pink Pink Pink
477
HZK-L Series
HZK7L 102 HZK16L HZK24L
HZK11L
HZK12L
HZK15L
HZK18L HZK20L
HZK22L
HZK27L
HZK30L
HZK33L
104
105
106
10
15
20
25
30
HZK36L
35
103
HZK9L
HZK6L
40
0.10 0.08 0.06 0.04 0.02 0 0.02 0.04 0.06 0.08 0.10 0 5
mV/ C %/ C
500
2.5mm 3mm
400
300
200
100
50
100
150
200
478
HZK-LL Series
Features
Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners).

HZK-LL Series Package Name : LLD Package Code : GLZZ0002ZA-A Taping Abbreviation (Quantity) TR(2,500 pcs / reel) TL(2,500 pcs / reel) 1 3rd. band 2nd. band 1 3rd. band 2nd. band Cathode band 2 Cathode band 2
1. Cathode 2. Anode

(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: With P.C. Board. Symbol Pd * Tj Tstg Value 250 175 55 to +175 Unit mW C C
479
HZK-LL Series
(Ta = 25C)
HZK2ALL HZK2BLL HZK2CLL HZK3ALL HZK3BLL HZK3CLL HZK4ALL HZK4BLL HZK4CLL HZK5ALL HZK5BLL HZK5CLL
1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.3 4.6 4.9
2.0 2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0 5.3
0.5
100
0.5
350
0.5
(1.2)
50
0.5
0.6
0.5
100
1.0
360
0.5
(1.2)
50
0.5
0.6
0.5
100
2.0
370
0.5
(1.5)
50
0.5
0.6
0.5
100
3.0
380
0.5
(1.5)
50
0.5
0.6
VZ2 = VZ1 (IZ = 0.05 mA) VZ2 (Iz = 0.001 mA)
Mark Color Code

Type HZK2ALL HZK2BLL HZK2CLL HZK3ALL HZK3BLL HZK3CLL HZK4ALL HZK4BLL HZK4CLL HZK5ALL HZK5BLL HZK5CLL Cathode Band Verdure Verdure Verdure Verdure Verdure Verdure Verdure Verdure Verdure Verdure Verdure Verdure Second Band Yellow Ocher Yellow Ocher Yellow Ocher Pink Pink Pink Orange Orange Orange Yellow Yellow Yellow Third Band Pink Blue Light Blue Pink Blue Light Blue Pink Blue Light Blue Pink Blue Light Blue
480
HZK-LL Series
102
HZK2LL
HZK3LL
0.01
103
HZK4LL
HZK5LL
0.02
mV/C %/C
0.5
10
105
0.03
1.0
106
0.04
1.5
107
108
0.05
2.0
250
2.5mm 3mm
200
150
100
50
50
100
150
200
481
HZU-L Series
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.

HZU-L Series Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) 1 TRF (3,000 pcs / reel) Cathode mark Mark
061

(Ta = 25C)
482
HZU-L Series
(Ta = 25C)
Zener Voltage VZ (V) *1 Type HZU6A1L HZU6A2L HZU6A3L HZU6B1L HZU6B2L HZU6B3L HZU6C1L HZU6C2L HZU6C3L HZU7A1L HZU7A2L HZU7A3L HZU7B1L HZU7B2L HZU7B3L HZU7C1L HZU7C2L HZU7C3L HZU9A1L HZU9A2L HZU9A3L HZU9B1L HZU9B2L HZU9B3L HZU9C1L HZU9C2L HZU9C3L HZU11A1L HZU11A2L HZU11A3L HZU11B1L HZU11B2L HZU11B3L HZU11C1L HZU11C2L HZU11C3L HZU12A1L HZU12A2L HZU12A3L HZU12B1L HZU12B2L HZU12B3L HZU12C1L HZU12C2L HZU12C3L Note: 1. Tested with DC. Min 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.5 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7 10.9 11.1 11.4 11.6 11.9 12.2 12.4 12.6 12.9 13.2 13.5 13.8 Max 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 7.6 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 12.1 12.4 12.7 12.9 13.1 13.4 13.7 14.0 14.3 Test Condition IZ (mA) 0.5 Reverse Current IR (A) Max 1 Test Condition VR (V) 2.0 Dynamic Resistance rd () Max 150 Test Condition IZ (mA) 0.5
0.5
2.0
80
0.5
0.5
2.0
60
0.5
0.5
3.5
60
0.5
0.5
6.0
60
0.5
0.5
8.0
80
0.5
0.5
10.5
80
0.5
483
HZU-L Series
Mark Code
Part No. HZU6A1L HZU6A2L HZU6A3L HZU6B1L HZU6B2L HZU6B3L HZU6C1L HZU6C2L HZU6C3L HZU7A1L HZU7A2L HZU7A3L HZU7B1L HZU7B2L HZU7B3L HZU7C1L HZU7C2L HZU7C3L Mark No. 061 062 063 064 065 066 067 068 069 071 072 073 074 075 076 077 078 079 Part No. HZU9 A1L HZU9 A2L HZU9 A3L HZU9 B1L HZU9 B2L HZU9 B3L HZU9 C1L HZU9 C2L HZU9 C3L HZU11A1L HZU11A2L HZU11A3L HZU11B1L HZU11B2L HZU11B3L HZU11C1L HZU11C2L HZU11C3L Mark No. 091 092 093 094 095 096 097 098 099 111 112 113 114 115 116 117 118 119 Part No. HZU12A1L HZU12A2L HZU12A3L HZU12B1L HZU12B2L HZU12B3L HZU12C1L HZU12C2L HZU12C3L Mark No. 121 122 123 124 125 126 127 128 129
484
HZU-L Series
HZU12C2L HZU11C2L HZU11A2L HZU11B2L HZU12A2L HZU12B2L HZU6B2L HZU6C2L HZU7A2L HZU7C2L HZU9C2L HZU6A2L HZU7B2L HZU9A2L HZU9B2L
102 103
104 105 106 107 108 5
10
11
12
13
14
15
0.10 0.08
50
%/ C
250
1.5mm
0.8mm
40
0.06 0.04 0.02 0 0.02 0.04 0.06 0.08 0.10 0 5 10 mV/C
30 20 10 0 10 20 30 40 50 15
200
Cu Foil
150
Printed circuit board 15 20 1.6t mm Material: Glass Epoxy Resin +Cu Foil
100
50
50
100
150
0.8mm
200
485
HZU-LL Series
Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise
Features
Low noise voltage (approximately 1/3 to 1/10 lower than the HZU series). Temperature coefficient is approximately 1/2 lower than the HZU series. Vz-Iz characteristics are semi-logarithmic linear from IZ = 1 nA to 1 mA.

HZU-LL Series Package Name : URP Package Code : PTSP0002ZA-A Taping Abbreviation (Quantity) TRF (3,000 pcs / reel) Cathode mark Mark 1
2A

(Ta = 25C)
tem Power dissipation Junction temperature Storage temperature Note: See Fig3. Symbol Pd * Tj Tstg Value 150 150 55 to +150 Unit mW C C
486
HZU-LL Series
(Ta = 25C)
Zener Voltage VZ(V) * Part No. Min Max
1
Reverse Current IR (nA) Max VR (V) Max
Dynamic Resistance ZZT () IZT (mA) ZZK (k) * Typ

2
Linearity VZ(V) *3 Max IZK (A)
IZ (mA)
HZU2ALL HZU2BLL HZU2CLL HZU3ALL HZU3BLL HZU3CLL HZU4ALL HZU4BLL HZU4CLL HZU5ALL HZU5BLL HZU5CLL Notes: 1. 2. 3. 4.
1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.3 4.6 4.9
2.0 2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0 5.3
0.5
100
0.5
350
0.5
(1.2)
50
0.5
0.5
100
1.0
360
0.5
(1.2)
50
0.5
0.5
100
2.0
370
0.5
(1.5)
50
0.5
0.5
100
3.0
380
0.5
(1.5)
50
0.5
Tested with DC. Reference only. VZ = VZ (IZ = 0.5 mA) VZ (Iz = 0.05 mA) Type No. is as follows; HZU2ALL, HZU2BLL, HZU5CLL.
Mark Code
Part No HZU2ALL HZU2BLL HZU2CLL HZU3ALL HZU3BLL HZU3CLL Mark No. 2A 2B 2C 3A 3B 3C Part No HZU4ALL HZU4BLL HZU4CLL HZU5ALL HZU5BLL HZU5CLL Mark No. 4A 4B 4C 5A 5B 5C
487
HZU-LL Series
102
HZU2LL
HZU3LL
0.01
HZU4LL
HZU5LL
Zener Voltage Temperature Coefficient gZ (%/ C)
103
0.02 mV/C %/C
0.5
10
105
0.03
1.0
106
0.04
1.5
10
108
0.05
2.0
250
1.5mm
0.8mm
200
Cu Foil
150
Printed circuit board 15 20 1.6t mm Material: Glass Epoxy Resin +Cu Foil
100
50
50
100
150
0.8mm
200
488
MEMO
489
MEMO
490
Renesas Diode Data Book

Publication Date: Rev.1.00, March 26, 2009 Published by: Sales Strategic Planning Div. Renesas Technology Corp. Edited by: Customer Support Department Global Strategic Communication Div. Renesas Solutions Corp.
2009. Renesas Technology Corp., All rights reserved. Printed in Japan.
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
RENESAS SALES OFFICES

Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
Colophon 6.2
Renesas Diode
REJ04G0001-0100

Renesas Diode Data Book

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April 1st, 2010 Renesas Electronics Corporation

Renesas Diode Data Book

Standard Package Dimensions

Nomenclature of Renesas Diodes

Renesas Diode Symbols and Their Definitions Reliability of Renesas Diodes

...................................................................................................................... ............................................................................................................ .............................................................

Standard Taping Specifications

Selection Table According to Main Diode Applications Data Sheets

Variable Capacitance Diodes for VCO ..................................................................................................................

Notes regarding these materials

Variable Capacitance Diodes for Electronic Tuning

BS/CS Tuner TV Tuner

Tuning Tuner UHF Tuning

URP UFP SFP URP

SFP VHF Tuning URP

High Frequency Switching Diodes

Application High frequency switching

Package MPAK URP UFP SFP

Part No. HSM2694 HSU277 HSC277 RKS151KJ RKS150KK RKS151KK

Page 148 148 150

PIN Diodes for Antenna Switch

Application Antenna switching

Package URP UFP

RKP402KS RKP403KS RKP404KS RKP405KS RKP406KS RKP407KS RKP408KS RKP409KS

100 100 100 100 100 100 100 100

100 100 100 100 100 100 100 100

1 1 0.9 1 0.9 1 1 0.9 1 0.9 1 1 0.9 1 0.9 1 1 1 1 0.9 1

100 100 100 100 100 100 100 100

RKP410KS RKP411KS RKP412KS RKP413KS RKP414KS RKP415KS

100 100 100 100 100 100

100 100 100 100 100 100

100 100 100 100 100 100

PIN Diodes for Attenuators

Small Signal Diodes

Application High speed switching

URP UFP SFP CMPAK

High voltage switching

URP CMPAK CMPAK-4

(K) indicates high-reliability products.

Schottky Barrier Diodes for Detector and Mixer

Application Detector and mixer

Schottky Barrier Diodes for High Speed Switching

Application High speed switching

SFP EFP MPAK

Diodes for System Protection

Application System protection

Part No. HSM107S HSM126S

Page 363 365

Zener Diodes for Surge Absorption

EFP SFP UFP URP

Bidirectional Surge absorption

SFP UFP URP CMPAK

Low capacitance version

Zener Diodes for Stabilized Power Supply

Standard Package Dimensions

Min 1.25 3.30 -

Nom 1.35 3.50 0.35

Max 1.45 3.60 -

Package Name MHD

JEITA Package Code

RENESAS Code GRZZ0002ZC-A

Previous Code MHD / MHDV