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Data Sheet
Description
Avagos VMMK-2503 is an easy-to-use broadband, high linearity amplifier in a miniaturized wafer level package (WLP). The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a transmitter driver in many applications from 112GHz. A 5V, 65mA power supply is required for optimal performance. This amplifier is fabricated with enhancement E-pHEMT technology and industry leading wafer level package. The GaAsCap wafer level package is small and ultra thin yet can be handled and placed with standard 0402 pick and place assembly. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 systems.
Features
1 x 0.5 mm Surface Mount Package Ultrathin (0.25mm) Unconditionally Stable Ultrawide Bandwidth Gain Block or Driver Amplifier RoHS6 + Halogen Free
Applications
2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications 802.16 & 802.20 BWA systems Radar, radio and ECM systems UWB
GY
GY
Input / Vc
Amp
Output / Vdd
Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 50V ESD Human Body Model = 125V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.
Parameters/Condition
Supply Voltage (RF Output) [2] Device Current [2] CW RF Input Power (RF Input) [3] Total Power Dissipation Max channel temperature Thermal Resistance [4]
Unit
V mA dBm mW C C/W
Absolute Max
6 120 +20 720 150 140
Notes 1. Operation in excess of any of these conditions may result in permanent damage to this device. 2. Bias is assumed DC quiescent conditions 3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25C 4. Thermal resistance is measured from junction to board using IR method
Parameters/Condition
Device Current Noise Figure Associated Gain Output 3rd Order Intercept Output Power at 1dB Gain Compression Input Return Loss Output Return Loss
Unit
mA dB dB dBm dBm dB dB
Minimum
46 12.5
Typ.
68 3.04 13.5 +27 +17
Maximum
88 4.1 18
-14 -20
Notes: 1. Losses of test systems have been de-embedded from final data 2. Measure Data obtained from wafer-probing 3. OIP3 test condition: F1 = 6.0GHz, F2 = 6.01GHz, Pin = -20dBm
7 9 Frequency (GHz)
11
13
7 9 Frequency (GHz)
11
13
0 -5
-10 S11 (dB) -10 -15 -20 S12 (dB) -20 1 3 5 7 9 Frequency (GHz) 11 13 -30 1
7 9 Frequency (GHz)
11
13
40 30 20 10 OIP3 OP1dB 0
-20
-30
7 9 Frequency (GHz)
11
13
7 9 Frequency (GHz)
11
13
Notes: 1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package 2. Output IP3 data taken at Pin=-15dBm
4.5 4
-20
-30
7 9 Frequency (GHz)
11
13
25 20 15 10 5 4V 4.5V 5V
7 9 Frequency (GHz)
11
13
7 9 Frequency (GHz)
11
13
Note: 1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package
10
-10
-20
-20
-30
7 9 Frequency (GHz)
11
13
-30
7 9 Frequency (GHz)
11
13
Notes: 1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package 2. Output IP3 data taken at Pin=-15dBm 3. Over temp data taken on a test fixture (Figure 20) without de-embedding
S11 Mag
0.32 0.19 0.16 0.17 0.17 0.18 0.19 0.20 0.20 0.20 0.21 0.22 0.24 0.27 0.30 0.34 0.37 0.40 0.43 0.46 0.48 0.50 0.52 0.52 0.53 0.54 0.55 0.55 0.56 0.56 0.57 0.58 0.59 0.61 0.63 0.64
S21 dB
-9.94 -14.31 -15.75 -15.65 -15.19 -14.78 -14.44 -14.12 -14.04 -13.87 -13.60 -13.03 -12.24 -11.38 -10.41 -9.46 -8.69 -7.97 -7.25 -6.81 -6.34 -5.99 -5.75 -5.60 -5.44 -5.31 -5.25 -5.18 -5.10 -4.97 -4.86 -4.73 -4.57 -4.32 -4.08 -3.86
S12 dB
15.16 14.54 14.35 14.20 14.02 13.80 13.54 13.23 12.87 12.44 11.98 11.48 10.94 10.38 9.79 9.19 8.57 7.95 7.33 6.73 6.14 5.56 5.00 4.45 3.95 3.44 2.92 2.41 1.87 1.37 0.85 0.33 -0.20 -0.73 -1.32 -1.87
S22 dB
-20.26 -19.58 -19.32 -19.14 -18.91 -18.67 -18.45 -18.22 -18.04 -17.87 -17.74 -17.67 -17.60 -17.58 -17.53 -17.52 -17.48 -17.38 -17.30 -17.17 -16.98 -16.80 -16.51 -16.27 -15.93 -15.63 -15.30 -14.97 -14.65 -14.44 -14.07 -13.82 -13.63 -13.32 -13.22 -13.01
Phase
-58.82 -63.36 -62.41 -68.23 -75.79 -87.11 -99.64 -114.81 -131.20 -150.35 -169.56 169.40 149.90 131.14 115.07 99.90 86.76 74.14 63.67 53.97 44.61 36.42 28.20 20.04 11.74 3.35 -4.75 -13.14 -21.24 -28.87 -37.32 -45.58 -53.12 -60.88 -68.98 -75.63
Mag
5.73 5.34 5.22 5.13 5.02 4.90 4.75 4.58 4.40 4.19 3.97 3.75 3.53 3.30 3.09 2.88 2.68 2.50 2.33 2.17 2.03 1.90 1.78 1.67 1.58 1.49 1.40 1.32 1.24 1.17 1.10 1.04 0.98 0.92 0.86 0.81
Phase
157.97 146.59 133.94 120.62 106.87 93.04 79.16 65.36 51.67 38.17 24.99 12.06 -0.50 -12.65 -24.56 -36.14 -47.41 -58.26 -68.81 -79.06 -89.16 -99.02 -108.79 -118.23 -127.94 -137.60 -147.29 -156.96 -166.74 -176.51 173.80 163.80 153.80 143.95 133.28 123.11
Mag
0.10 0.10 0.11 0.11 0.11 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.14 0.14 0.14 0.14 0.14 0.15 0.15 0.16 0.17 0.17 0.18 0.19 0.19 0.20 0.20 0.21 0.22 0.22 0.22
Phase
17.70 6.88 1.32 -2.44 -5.92 -9.42 -13.07 -17.02 -21.15 -25.41 -29.85 -34.27 -38.63 -43.09 -47.40 -51.43 -55.43 -59.63 -63.51 -67.56 -71.95 -76.07 -80.97 -85.94 -91.73 -97.31 -103.67 -110.73 -117.22 -125.53 -133.23 -141.57 -150.48 -159.58 -169.26 -179.29
Mag
0.11 0.08 0.09 0.09 0.09 0.08 0.08 0.08 0.07 0.06 0.04 0.03 0.02 0.01 0.01 0.02 0.02 0.02 0.04 0.05 0.07 0.09 0.10 0.13 0.15 0.18 0.21 0.23 0.25 0.27 0.29 0.31 0.32 0.34 0.35 0.37
dB
-19.18 -21.51 -21.40 -20.96 -21.32 -21.68 -21.97 -22.44 -23.45 -25.01 -26.97 -29.82 -33.72 -38.20 -37.52 -35.60 -34.56 -32.77 -29.02 -25.71 -23.24 -21.38 -19.69 -17.99 -16.23 -15.01 -13.76 -12.60 -11.87 -11.27 -10.66 -10.18 -9.78 -9.35 -9.07 -8.67
Phase
-82.09 -116.84 -127.88 -135.63 -144.09 -155.26 -166.36 -177.07 171.57 159.23 144.70 128.66 105.68 58.43 -7.15 -43.96 -75.88 -114.10 -141.61 -158.63 -171.34 176.10 163.29 152.12 141.89 131.61 122.83 115.49 107.66 98.81 91.12 82.29 72.68 64.58 55.81 45.15
50 Ohm line
50 Ohm line
Refer the Absolute Maximum Ratings table for allowed DC and thermal conditions.
Biasing the device at 5V compared to 4V results in higher gain, higher IP3 and P1dB. In a typical application, the biastee can be constructed using lumped elements. The value of the output inductor can have a major effect on both low and high frequency operation. The demo board uses an 10nH inductor that has self resonant frequency higher than the maximum desired frequency of operation. At frequencies higher than 6GHz, it may be advantageous to use a quarter-wave long micro-strip line to act as a highimpedance at the desired frequency of operation. This technique proves a good solution but only over relatively narrow bandwidths. Another approach for broadbanding the VMMK-2503 is to series two different value inductors with the smaller value inductor placed closest to the device and favoring the higher frequencies. The larger value inductor will then offer better low frequency performance by not loading the output of the device. The parallel combination of the 100pF and 0.1uF capacitors provide a low impedance in the band of operation and at lower frequencies and should be placed as close as possible to the inductor. The low frequency bypass provides good rejection of power supply noise and also provides a low impedance termination for third order low frequency mixing products that will be generated when multiple in-band signals are injected into any amplifier. 8
S Parameter Measurements
The S-parameters are measured on a .016 inch thick RO4003 printed circuit test board, using G-S-G (ground signal ground) probes. Coplanar waveguide is used to provide a smooth transition from the probes to the device under test. The presence of the ground plane on top of the test board results in excellent grounding at the device under test. A combination of SOLT (Short - Open - Load - Thru) and TRL (Thru - Reflect - Line) calibration techniques are used to correct for the effects of the test board, resulting in accurate device S-parameters. The reference plane for the S Parameters is at the edge of the package. The product consistency distribution charts shown on page 2 represent data taken by the production wafer probe station using a 300um G-S wafer probe. The ground-signal probing that is used in production allows the device to be probed directly at the device with minimal common lead inductance to ground. Therefore there will be a slight difference in the nominal gain obtained at the test frequency using the 300um G-S wafer probe versus the 300um G-S-G printed circuit board substrate method.
Outline Drawing
Top View Side View
0.5 mm
GY
0.25mm 1.00mm
Notes: 1. indicates pin 1 2. Dimensions are in millimeters 3. Pad Material is minimum 5.0 um thick Au
6. Packages have been qualified to withstand a peak temperature of 260C for 20 to 40 sec. Verify that the profile will not expose device beyond these limits. 7. Clean off flux per vendors recommendations. 8. Clean the module with Acetone. Rinse with alcohol. Allow the module to dry before testing.
fy the device rial with one tal. Soldering sion than FR5 materials with ge of the base evice circuitry GaAs package to damaging s RO4003 and al and should
0.100 (0.004) 0.500 (0.020) Part of Input Circuit 0.200 (0.008) 0.200 (0.008)
0.7 (0.028)
ng
source leads leads of the unt. The recern is shown ned footprint t borders the en.
0.254 dia PTH (0.010) 4pl Solder Mask 0.400 dia (0.016) 4pl
Notes: Figure 5. Recommended PCB layout for VMMK devices 1. 0.010 Rogers RO4350
re any plated ng and tests hin .003) and ure 5 provides VMMK-3XXX
As a general rule, if a VIA is within .004 (100u) of the edge of the soldermask but not under the device, then the VIA 9 should be filled. Any VIA which is covered by the solder mask and is beyond .004 (100u) of the solder mask edge can be uncapped and unfilled as it is not at risk of wicking
Ordering Information
Part Number
VMMK-2503-BLKG VMMK-2503-TR1G
Container
Antistatic Bag 7 Reel
Die dimension:
E
Dim D E
Range
1.004 - 1.085 0.500 - 0.585 0.225 - 0.275
Unit
mm mm mm
A
Note: All dimensions are in mm
Reel Orientation
REEL
Device Orientation
USER FEED DIRECTION 4 mm
8 mm
GY
GY
GY
GY
CARRIER TAPE
END VIEW
10
Tape Dimensions
T Note: 2 P2 Do Note: 1 Po B
A P1 Ao D1
R0.1
5 (Max)
Ko
AA SECTION
Unit: mm
Symbol
K1 Po P1 P2 Do D1 E F 10Po W T
Spec.
4.00.10 4.00.10 2.00.05 1.550.05 0.50.05 1.750.10 3.500.05 40.00.10 8.00.20 0.200.02
Notice: 1. 10 Sprocket hole pitch cumulative tolerance is 0.1mm. 2. Pocket position relative to sprocket hole measured as true position of pocket not pocket hole. 3. Ao & Bo measured on a place 0.3mm above the bottom of the pocket to top surface of the carrier. 4. Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier. 5. Carrier camber shall be not than 1m per 100mm through a length of 250mm.
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2013 Avago Technologies. All rights reserved. AV02-2004EN - March 19, 2013
BB SECTION