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Eduardo Martnez and scar. Alejos
Citation: Journal of Applied Physics 116, 023909 (2014); doi: 10.1063/1.4889848
View online: http://dx.doi.org/10.1063/1.4889848
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Coupled Dzyaloshinskii walls and their current-induced dynamics
by the spin Hall effect
Eduardo Martnez
1,a)
and
Oscar Alejos
2
1
Dpto. de Fisica Aplicada, Universidad de Salamanca, Plaza de los Cados s/n, E-37008 Salamanca, Spain
2
Dpto. de Electricidad y Electr onica, Universidad de Valladolid, Paseo de Bel en, 7, E-47011 Valladolid, Spain
(Received 29 May 2014; accepted 28 June 2014; published online 11 July 2014)
The nucleation of domain walls in ultrathin ferromagnetic/heavy-metal bilayers is studied by means
of micromagnetic simulations. In the presence of interfacial Dzyaloshinskii-Moriya interaction, the
nucleated walls naturally adopt a homochiral conguration with internal magnetization pointing
antiparallely. The interaction between these walls was analyzed and described in terms of a classical
dipolar force between the magnetic moments of the walls, which couples their dynamics.
Additionally, the current-induced motion of two homochiral walls in the presence of longitudinal
elds was also studied by means of a simple one-dimensional model and micromagnetic modeling,
considering both one free-defect strip and another one with random edge roughness. It is evidenced
that in the presence of pinning due to edge roughness, the in-plane longitudinal eld introduces an
asymmetry in the current-induced depinning, in agreement with recent experimental results.
VC
2014 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4889848]
I. INTRODUCTION
Nowadays spin-orbit driven phenomena at heavy-metal/
ferromagnet interfaces are the focus of intense research
efforts.
17
The inuence of spin-orbit coupling (SOC) on
spin transport and magnetization textures leads to rich funda-
mental phenomena that apart from their intrinsic interest can
be also exploited to enable high-performance and low-power
spintronic devices.
811
In particular, recent experiments
1216
have shown that in ultrathin metallic ferromagnets sand-
wiched between a heavy metal and an oxide, SOC and the
broken inversion symmetry lead to chiral domain walls
(DWs) through the Dzyaloshinskii-Moriya interaction
(DMI).
10,1724
Also in these systems, SOC can generate
much stronger current-induced torques (spin orbit torques,
SOTs) than conventional spin-transfer torques (STTs),
25,26
and recent works
14,15
suggest that the spin Hall effect
(SHE)
2731
is dominant on driving DMI-stabilized homochi-
ral Neel DWs with high efciency.
Experimental setups to study the current-induced DW
motion (CIDWM) usually start from an uniform state in the
ferromagnetic strip, which is magnetized along the high per-
pendicular magnetocrystalline anisotropy (PMA) direction
(out-of-plane, z-axis). By means of injection of current
pulses along a conducting and transversal wire,
9,14,32,33
the
direction of the magnetization can be locally reversed and
therefore two DWs are nucleated. Although there are few
theoretical works analysing these DW nucleation processes
for in-plane
33
and for out-of-plane
34
ferromagnetic mono-
layers, this numerical analysis has not been studied in high
PMA multilayers with broken inversion symmetry.
Moreover, most of the theoretical studies are focused on the
description of the CIDWM of a single DW, but the dynamics
of two coupled walls is currently interesting from both theo-
retical and technological points of view.
In the present work, the nucleation processes of two
DWs are micromagnetically studied in high PMA strips with
zero and nite DMI. The force between homochiral walls is
micromagnetically analysed by applying perpendicular elds
antiparallel to the magnetization in the central domain
between the two walls. After quantifying this repulsion
force, the CIDWM by the SHE is studied by means of a one-
dimensional model (1DM) which takes into account the
coupled motion of these homochiral walls along perfect sam-
ples. The CIDWM is also micromagnetically studied for
samples with weak and strong DMI in the presence of longi-
tudinal elds. Finally, and in order to describe realistic con-
ditions, the inuence of edge roughness is evaluated. Our
analysis of the coupled CIDWM of homochiral DWs is rele-
vant for describing experimental measurements, and it could
be also useful to design DW based spin-orbitronics devices.
II. MICROMAGNETIC MODEL: DIMENSIONS AND
MATERIAL PARAMETERS
In the framework of the micromagnetic model (lM), the
magnetization
~
M(~r; t) is a continuous vectorial function and
its dynamics is governed by the augmented Landau-Lifshitz
Gilbert (LLG) equation
d~ m
dt
= c
0
~ m
~
H
ef f
a ~ m
d~ m
dt
~s
SO
; (1)
where ~ m(~r; t) =
~
M(~r;t)
M
s
is the normalized local magnetization
with M
s
the saturation magnetization, c
0
is the gyromagnetic
ratio, and a the Gilbert damping parameter.
~
H
ef f
is the effec-
tive eld, derived from system energy density
(
~
H
ef f
=
1
l
0
M
s
d
d~ m
), which apart from the standard exchange,
magnetostatic, uniaxial anisotropy, and Zeeman
a)
Author to whom correspondence should be addressed. Electronic mail:
edumartinez@usal.es
0021-8979/2014/116(2)/023909/11/$30.00 VC
2014 AIP Publishing LLC 116, 023909-1
JOURNAL OF APPLIED PHYSICS 116, 023909 (2014)
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contributions also includes the anisotropy exchange
DMI.
1719
In the thin-lm approach (L
z
L
y
, L
x
), the
interfacial DMI energy density
DM
is given by
19,23
DM
= D[m
z
\ ~ m (~ m \)m
z
[; (2)
where D is the DMI parameter describing its intensity. The
DMI effective eld
~
H
DM
is therefore
~
H
DM
=
2D
l
0
M
s
@m
z
@x
~u
x
@m
z
@y
~u
y
@m
x
@x
@m
y
@y
~u
z
: (3)
In the absence of DMI (D=0), the exchange interaction
imposes boundary conditions at the surfaces of the sample
35
such that the magnetization vector does not change along the
surface (
@~ m
@n
=
~
0, where
@
@n
indicates the derivative in the out-
side direction normal to the surface of the sample).
However, in the presence of the interfacial DMI, this bound-
ary condition has to be replaced by
36
@~ m
@n
=
D
2A
~ m ~n ~u
z
( ); (4)
where ~n represents the local unit vector normal to each sam-
ple surface.
The last term in (1) is the SOT, ~s
SO
. Based on experi-
mental observations,
1316
here, we assume a Slonczewski-
like SOT which originates from the SHE,
27,28
where spin-
dependent scattering of an in-plane charge current
(
~
j
a
= j
a
~u
x
) in a heavy metal (e.g., Ta, Pt) generates an out-
of-plane spin current in the ferromagnetic layer. This spin
current is polarized along the transversal direction ~u
y
, per-
pendicular to both the electrical current
~
j
a
= j
a
~u
x
and the
direction of broken inversion symmetry (~u
z
). The corre-
sponding SHE-SOT~s
SO
is
3743
~s
SO
= c
0
~ m (~ m H
SH
~u
y
); (5)
where the amplitude of the SHE effective eld H
SH
is given
by
2,30,31,37
H
SH
=
hh
SH
j
a
2l
0
eM
s
L
z
; (6)
where e <0 is the electron charge, L
z
is the thickness of the
ferromagnetic layer, and h
SH
is the spin Hall angle, which is
dened as the ratio between the spin and charge current
densities.
2,30
We consider an ultrathin ferromagnetic CoFe strip with
high PMA and a cross section of L
y
L
z
=160 nm0.6 nm
on top of a heavy metal layer, either Ta or Pt. Common and
typical high PMA parameters were considered for both
Ta/CoFe and Pt/CoFe samples:
16
saturation magnetization
M
s
= 7 10
5
A=m, exchange constant A = 10
11
J=m, and
uniaxial anisotropy constant K
u
= 4:8 10
5
A=m
3
. The spe-
cic parameters for the Ta-sample (Ta/CoFe/MgO) are a
weak DMI parameter D = 0:05 mJ=m
2
, a negative spin Hall
angle h
SH
=0.11 (see Refs. 14 and 16) and a Gilbert damp-
ing a =0.03.
44,45
On the other hand, the values to mimic the
Pt-sample (Pt/CoFe/MgO) are a strong DMI parameter
D = 1:2 mJ=m
2
, a positive spin Hall angle h
SH
=0.07 (see
Refs. 14 and 16), and a high Gilbert damping a =0.3 (see
Ref. 46). For both Ta and Pt samples, the amplitude of the
DMI ([D[) is high enough to overcome shape anisotropy, and
therefore, the DWs adopt a Neel equilibrium conguration.
14
The micromagnetic (lM) results described hereafter
were obtained by numerically solving the LLG equation (1)
by using GPMagnet, a commercial parallelized nite-
difference micromagnetic solver.
47,48
Samples with
L
x
=4.8 lm in length were discretized in 2D with cells of
Dx =Dy =4 nm in side, and thickness equal to the ferromag-
netic strip thickness (L
z
=0.6 nm). A 6th-order Runge-Kutta
scheme with a time step of 0.5ps was used to solve (1).
Several tests were performed with a cell size of 2 nm con-
rming that similar micromagnetic results are obtained.
III. NUCLEATION OFACHIRAL AND HOMOCHIRAL
WALLS
Before analyzing the CIDWM, we rstly performed a
micromagnetic study of the DW nucleation process by
means of a current pulse owing through an adjacent con-
ductive wire, which is perpendicular to the ferromagnetic
strip and placed above its center (see Fig. 1(a)). The ferro-
magnetic strip is initially uniformly magnetized along the
z >0 direction, and the conductive wire has a cross section
of w
c
t
c
=200 nm640 nm. A current density
~
j
c
= j
c
~u
y
owing through it induces an Oersted eld
~
H
Oe
which was
numerically computed from Biot-Savarts law
35
and included
as an additional contribution to the total effective eld
~
H
ef f
in
the LLG equation (1) (see Ref. 33 for further details). A
square current pulse
~
j
c
(t) = j
c
(t)~u
y
is injected through the
current wire with an amplitude of j
c
= 1:7 10
12
A=m
2
and
duration of 2.5 ns. Except this current pulse, the nucleation
processes were studied in the absence of any other driving
eld nor current.
In the absence of DMI (D=0), two walls are nucleated
at the end of the current pulse with a central domain between
them magnetized along the negative z-axis (see rst set of
snapshots in Fig. 1(b), which shows the three components of
the local magnetization at 2.5 ns, when the current pulse is
switched off). At this instant, the magnetization in the left
DW is not uniform across the strip width, and the right DW
shows a Neel conguration with internal moment magne-
tized along the positive x-axis. The second set of snapshots
in Fig. 1(b) corresponds to t =25 ns, where the internal mag-
netization of both walls points along the transversal direction
(y-axis). These two Bloch walls depict an antiparallel
conguration with ~ m
L
= ~u
y
for the left wall (i =L) and
~ m
R
= ~u
y
for the right wall, and the third set of snapshots in
Fig. 1(b) (at t =500 ns) indicates that the distance between
the two Bloch walls has increased, so the DWs repel each
other. This repulsion between these Bloch walls in the ab-
sence of DMI has been already discussed by Kim et al. in
Ref. 34. However, in their analysis, the repulsion force was
described in term of the dipolar eld that lateral domains
exert on the central one, without considering the relative ori-
entation of the internal DW moments.
More interesting is the analysis of the nucleation proc-
esses in samples with nite DMI, where the internal structure
023909-2 E. Martnez and
O. Alejos J. Appl. Phys. 116, 023909 (2014)
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of the nucleated DWs is completely different. Both for
weak-DMI (D = 0:05 mJ=m
2
, Fig. 1(c) for a =0.03, and Fig.
1(d) for a =0.3) and for strong DMI (D = 1:2 mJ=m
2
and
a =0.3, Fig. 1(e)), the left and the right walls present Neel
states with internal magnetization along the x-axis. Now,
these walls are antiparallel each other as due to the chirality
imposed by the DMI. The left wall, which is an up-down
wall, has internal moment ~ m
L
= ~u
x
, whereas the right wall
(down-up wall) is magnetized along the antiparallel direction
(~ m
R
= ~u
x
). The same homochiral Neel conguration was
also obtained for other nucleation current pulses. Our simula-
tions indicate (see third snapshots in Figs. 1(c)1(e) 500 ns
after pulse was switched off) that even in the absence of any
applied current nor eld, the central domain between the
walls, magnetized along the negative z-axis, expands even
when the nucleating pulse is switched off. Therefore, the
homochiral Neel walls move away, indicating that they ex-
perience a repulsion force. A similar repulsion force was
very recently described by Vernier et al.
49
for extended thin-
lms of Ta/CoFeB/MgO samples. Our modeling for conned
multilayers in the presence of the DMI also indicates that the
internal structure of the homochiral DWs does not change
during this repulsion. It was also checked that the central do-
main monotonously expands even when the simulations start
from two homochiral walls without being nucleated by the
pulse. Therefore, the repulsion is not related to the inertia of
the walls gained during the nucleation process, and it must
be related to the antiparallel internal moments of these
homochiral walls, as it will be shown in Sec. IV.
Besides, we noted that the repulsion force depends on the
damping parameter a: the smaller the damping the larger the
distance between walls at a given instant of time (see both
Figs. 1(c) and 1(d) at t =500 ns for a =0.03 and a =0.3,
respectively). As it be will shown in the Sec. IV, the repulsion
force can be described by an effective out-of-plane eld
which pushes the wall along the longitudinal axis (x-axis).
Differently from the model by Kim et al.,
34
where the repul-
sion dipolar eld was assumed to be only dependent on the
relative size of the domains, our simulations indicate that this
longitudinal effective eld depends on the relative orientation
of the internal DW moments and on the distance between
their centers. For a given instant of time after the switching
off of the nucleation pulse, the distance d(t) between walls is
larger for smaller damping parameter a because as in the
standard eld-driven DW motion in the rigid regime,
50
the
repulsion velocity is proportional to the longitudinal effective
eld and inversely proportional to the damping.
IV. REPULSION FORCE BETWEEN HOMOCHIRAL
DWs: MICROMAGNETIC STUDYAND ANALYTICAL
DESCRIPTION
In order to describe and quantify the repulsion force
between the two homochiral walls (D,=0), we considered an
initial state with two homochiral Neel walls separated by
d =256 nm from each other in the Pt-sample (Fig. 2(a)). Left
and right walls depict up-down and down-up congurations,
respectively, so the lateral domains are magnetized along
~u
z
and the central one along ~u
z
. As described above, if
the system evolves freely in the absence of driving forces
(B
z
=0), the two walls would separate from each other (not
shown). However, if a perpendicular eld is applied parallel
to the magnetization in the lateral domains (
~
B
z
= B
z
~u
z
with
B
z
>0), the repulsion between these chiral DWs can be bal-
anced with the force due to the B
z
, which tries to shrink the
central domain. This is clearly seen in Fig. 2(b), which
shows the temporal evolution of the distance between walls
(d(t) =X
R
(t) X
L
(t), with X
R
and X
L
being the position of the
Left and Right DWs, respectively) under different elds. The
distance between walls nally reaches a terminal value, and
this terminal distance decreases as B
z
increases.
Figs. 2(c)2(f) show the terminal magnetization congu-
ration under several applied elds B
z
. These snapshots and a
detailed evaluation the magnetization proles indicate that
the internal magnetization ~ m
i
and the width D of each wall
do not signicantly change with B
z
, and only the distance is
FIG. 1. (a) Schematic illustration of
the ferromagnetic strip, including the
position and dimensions of the current
line, required to nucleate the walls as
described in the text. A square current
pulse
~
j
c
(t) = j
c
(t)~u
y
is injected
through the current wire with an ampli-
tude of j
c
= 1:7 10
12
A=m
2
and du-
ration of 2.5 ns. Micromagnetic
snapshots of the nucleated DWs when
the pulse is switched off (at t =2.5 ns)
at t =25 ns and at t =500 ns for: (b) in
the absence of DMI (D=0) with
a =0.3, (c) for weak DMI D =
0:05 mJ=m
2
with a =0.03, (d) for
strong DMI D = 1:2 mJ=m
2
with
a =0.03, and (e) again for weak DMI
D = 0:05 mJ=m
2
but now with a =0.3.
023909-3 E. Martnez and
O. Alejos J. Appl. Phys. 116, 023909 (2014)
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modied. The maximum eld which could be applied with-
out collapsing the two walls was B
z
=106 mT.
The terminal distance between walls (d
eq
) as a function
of B
z
is shown in Fig. 3(a), which indicates that B
z
scales
with d
4
eq
. This is reminiscent of a classical repulsion/attrac-
tion dipolar force between two antiparallel/parallel magnetic
moments aligned along the direction which contains both
moments.
51
These magnetic moments ~l are related to the in-
ternal magnetization of each wall as ~ l
L
= M
s
V~ m
L
and
~ l
R
= M
s
V~ m
R
, where V=DL
y
L
z
is the volume of each wall
and ~ m
i
is the unit vector along the internal DW magnetiza-
tion. It has to be noted that our micromagnetic results of Fig.
3(a) cannot be reproduced by the approach considered by
Kim et al.
34
describing the repulsion force between achiral
walls by just considering the magnetostatic eld generated
by the lateral domains on the central domain (see Eq. (1) in
Ref. 34 and green solid curve in Fig. 3(a)), and therefore,
neglecting the internal magnetization of the walls, which is
essential to describe the full micromagnetic results of Fig.
3(a) as explained below. The results of Fig. 2 indicate that
~ m
i
= 7~u
x
, but in general, the internal DW magnetization
could point along any in-plane direction (for instance, under
in-plane elds B
x
,=0 or B
y
,=0). Therefore, it is worthy to
describe the dipolar force
~
F
dip;ij
which the wall i exerts on
the wall j in terms of their internal magnetization angles U
L
and U
R
, as schematically represented in Fig. 3(b). For the in-
plane internal DW magnetization of these walls, the dipolar
force
~
F
dip;ij
would have both longitudinal x and transverse
y components, but for our purpose of studying the DW
motion along the x-axis, the only relevant one is the x com-
ponent, which can be written as
~
F
dip;ij
= F
dip;ij
~u
ij
=
3l
0
M
s
V ( )
2
4pd
4
sin U
i
sin U
j
2 cos U
i
cos U
j [ [~u
x
; (7)
where i, j: L, R and the unit vector pointing from wall i to
wall j is ~u
ij
= ~u
x
= ~u
ji
. For the case of Fig. 1,
U
L
=180
and U
R
=0
p
2
c
0
H
x;i
Q
i
H
D
( ) sin U
i
p
2
c
0
H
y;i
cos U
i
; (11)
X
B;i
U
i
; U
j
; d ( ) = c
0
H
z;i
p
2
c
0
QH
SH
cos U
i
; (12)
where Q
i=L
=1 (up-down wall) and Q
i=R
=1 (down-up
wall). The applied current ows along strip axis,
~
j
a
= j
a
~u
x
with j
a
>0 along the x >0 axis. The amplitude of DMI
effective eld is H
D
=
D
l
0
M
s
D
with D the magnitude of the
DMI.
23
D is the DW width, which is estimated to be
D =
A
K
ef f
q
~ 7:62nm, where K
ef f
= K
u
l
0
M
2
s
2
. The shape
anisotropy eld is H
K
=N
x
M
s
, where N
x
is the magnetostatic
factor given by Ref. 56, N
x
=
L
z
log 2
pD
= 0:0174. (H
x,i
, H
y,i
,
H
z,i
) are the total Cartesian components of the magnetic eld
that each wall i: L, R experiences, including the applied mag-
netic eld, which has Cartesian components (H
x
, H
y
, H
z
),
and the eld due to the coupling between walls. In particular,
the dipolar force (
~
F
dip;ij
= F
dip;ij
~u
ij
) that every DW
exerts on each other is taken into account in the 1DM model
by an additional contribution to the perpendicular applied
eld H
z
as
H
z;i
U
j
; d ( ) = QH
z
H
dip;ji;z
= QH
z
3M
s
V
8pd
4
sin U
j
sin U
i
2 cos U
j
cos U
i ( );
(13)
where H
dip,ji,z
was dened in (8).
Additionally, every wall exerts not only dipolar forces on
the internal moment of each other but it could also exert a
dipolar torque.
51
This dipolar torque (~s
dip;ij
= ~ m
j
~
B
dip;ij
)
modies the externally applied longitudinal H
x
and transverse
H
y
in-plane elds so that
H
x;i
U
j
; d ( ) = H
x
B
dip;ji;x
l
0
= H
x
M
s
V
4pd
3
2 cos U
j
; (14)
H
y;i
U
j
; d ( ) = H
y
B
dip;ji;y
l
0
= H
y
M
s
V
4pd
3
sin U
j
: (15)
While the dipolar force (
~
F
dip;ij
) and the corresponding
out-of-plane eld (H
dip,ji,z
) were found to be essential to
reproduce the micromagnetically computed repulsion
between homochiral walls, the dipolar torques (~s
dip;ij
) and
the corresponding in-plane elds (H
dip,ji,x
and H
dip,ji,y
)
were found negligible, and the results described hereafter
were also obtained by imposing H
dip,ji,x
=H
dip,ji,y
=0.
These 1DM equations describe coupled DW dynamics
in perfect samples (no pinning) and at zero temperature.
However, these pinning and thermal effects can be taken into
account in this 1DM.
52,53,57
In such a case, the out-of-plane
eld H
z,i
has to be replaced by H
z,i
H
p,i
(X
i
) H
th,i
(t), which
includes in addition to H
z,i
the spatial dependent pinning
eld (H
p,i
(X, i)) accounting for local imperfections, and the
thermal eld (H
th,i
(t)) describing the effect of thermal uctu-
ations.
52,53,57
The pinning eld can be derived from an effec-
tive spatial-dependent pinning potential
52,53,57
V
pin,i
(X
i
) as
H
p;i
(X
i
) =
1
2l
0
M
s
L
y
L
z
@V
pin;i
(X
i
)
@X
i
. The thermal eld is assumed
to be a random Gaussian-distributed stochastic process with
zero mean value (H
th;i
(t)) = 0) and uncorrelated in time
(H
th;i
(t)H
th;i
(t
/
)) =
2aK
B
T
l
0
c
0
M
s
DL
y
L
z
d(t t
/
), where K
B
is the
Boltzmann constant and T the temperature). Except where
otherwise indicated, perfect samples (H
p,i
(X
i
) =0) at zero
temperature (H
th,i
(t) =0) are considered. The system of four
coupled equations (9) and (10) for i =L, R with (11), (12),
(14), (15) and (13), were numerically solved by means of a
4th Runge-Kutta algorithm with a time step of 1 ps. Before
describing the current-driven motion, it is also interesting to
mention here that the similar curves to the ones shown in
023909-5 E. Martnez and
O. Alejos J. Appl. Phys. 116, 023909 (2014)
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130.92.9.55 On: Thu, 28 Aug 2014 04:43:08
Fig. 3(a) were also obtained by numerically solving these
coupled 1DM equations, which further supports the validity
of the model.
A. Temporal evolution of the DW positions, velocities,
and angles: Weak-DMI
We consider an up-down wall at the left side
(U
L
(0) =180
).
The initial distance between them is d(0) =X
R
(0) X
L
(0)
=1200nm. The 1DM results for the temporal evolution of the
DWpositions (X
L
(t), X
R
(t)), DWvelocities (v
L
(t), v
R
(t)) and DW
angles (U
L
(t), U
R
(t)) are shown in Fig. 4 under a xed current
density [j
a
[ = 10
9
A=m
2
with either one or the inverse polarity.
In the absence of longitudinal eld (B
x
=0) (see Fig.
4(a)), both left and right DWs reach a steady regime, where
they move with identical velocities along the electron ow
(against the current), and maintaining their initial distance
(d =1200 nm). Note that the initial distance between walls is
very large so the repulsion at rest is negligible. When the
current is applied, the internal DW magnetization rotates
oppositely within the two walls. Under positive current
(along ~u
x
), the internal DW magnetization of the Left wall
rotates clockwise, whereas the right wall rotates the same
angle counter-clockwise. Once the steady regime is reached,
both walls have a no-null and constant component along the
positive transverse axis (y-axis). The sense of rotation
changes when the current is along ~u
x
. This rotations are
due to the SHE, which drives Neel walls but it also exerts a
torque on their internal magnetization. When a longitudinal
eld is applied (B
x
,=0), the dynamics of the two DWs are
different because this eld supports the internal DW magnet-
ization along the x-axis within one wall but opposes to it
within the other wall. If a positive longitudinal eld B
x
>0 is
applied, it favourably acts to the DMI eld in the right wall,
and opposingly to the DMI eld in the left one. In other
words, a positive longitudinal eld is parallel (antiparallel)
to the internal magnetization of right (Left) DW. If the posi-
tive longitudinal eld is smaller than the DMI effective eld
(l
0
H
D
~10 mT) (see Fig. 4(b)), both DWs move along the
same direction, but with different velocities. The DW at the
right side propagates faster than the one at the left, because
the terminal DW angle within the right wall is closer to the
x-axis, while the terminal angle within the left wall has a
larger transverse y component. Therefore, under positive cur-
rent, the central domain contracts, and the two DWs collapse
at a time around 280 ns, whereas under negative current, the
central domain expands. If a longitudinal eld larger than
the DMI effective eld is applied (B
x
>10 mT), the internal
magnetization in the Left wall reverses, and therefore, it prop-
agates along the current sense, and against the right wall (see
Fig. 4(c) for B
x
=15 mT). Note that for B
x
=15 mT>l
0
H
D
,
U
R
~ 0