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IJECET
IAEME
A. K. Bhardwaj,
A. K. Jaiswal
ABSTRACT
In recent years, significant progress in understanding of the physics of carbon nanotube
electronics devices and identifying potential application has occurred. In a nanotube low bias (160m
V 200m V) can be nearly ballistic across distances of several hundred nanometers. The study and
analysis of the optical proprieties through Katuara plot explains the behavior as semiconducting or as
metal, Carbon nanotubes are supporting in optical system applications. The electronic proprieties are
governed by a single parameter named the chiral vector, and there are three parameters affecting the
performance of carbon nanotubes diameter, chirality, and number of walls. The carbon nanotube
supports optical proprieties by three main parameters very important to develop work with optical
system application such as Electronic structure of carbon nanotubes, Saturable absorption, and third
order Nonlinearity. Depending on the chiral vector carbon nanotubes behave as semiconductor or
metal. But here focus on semiconducting carbon nanotubes to improve optical integrated circuit. The
analyze Optical Code Division Multiple Access (OCDMA) with Carbon Nanotubes (CNTs) to
improve three parameters very important in any communication system as data rate (R), bit error rate
(BER), and signal to noise ratio (SNR). It can be divided into broad categories based on the way in
which a particular users code is applied to the optical signal. The presents optimized design
performance of incoherent OCDMA as well as coherent OCDMA using carbon nanotubes (CNTs)
based devices with reference to increased Data Rate (R) and reduced Bit Error Rate (BER) which is
far enhanced in comparison to Silicon based Optical Devices. The carbon nanotubes with OCDMA
system supports ultrahigh speed network with data rate upto Tb/s and exceptional BER performance
in the system. As observed and presented in this paper, the carbon nanotubes brought in the
improved performance OCDMA system network with highest data rate and lowest bit error rate.
Keywords: OCDMA, CNTs, Optical Systems, Coherent OCDMA, Incoherent OCDMA and PPM
and OOK Formats.
International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976
6464(Print), ISSN 0976 6472(Online), Volume 5, Issue 10, October (2014), pp. 01-33 IAEME
INTRODUCTION
Carbon Nanotubes (CNTs) were discovered by Sumio Iijima in NEC in Japan in the early 90s
[1].Carbon is the most important element of the periodic classification for human being. The six
electrons with two of them fill the first orbit as shown figure 1. The remaining four electrons fill the
second orbit as Diamond ( ) and Graphite ( ) as well as Sp hybrid orbital, responsible for
bonding structure of diamond, graphite, nanotubes, and fullerenes [3]. It has since become a
prominent material for an amazing breath of scientific and technological displines of ranging from
structural and material science to chemistry, biology, and electronics [2]. Carbon nanotubes are one
of most commonly mentioned building blocks of nanotechnology, with one hundred times the tensile
strength of steel, thermal conductivity better than all but the purest diamond and electrical
conductivity similar to copper but with the ability to carry much higher currents, they seem to be a
wonder material, thin cylinders of graphite. Graphite ( ) is made up layers of carbon atoms
arranged in a hexagonal lattice like chicken wire. Though the chicken wire structure itself is very
strong [4]. But lets look at some of the different types of nanotubes and nanotube pretenders such as
One of major classification of carbon nanotubes is into Single walled varieties (SWNTs), which
have a single cylindrical wall, and Multi-walled varieties (MWNTs), which have cylinders within
cylinders as shown in figure1 which illustrates all stages fabricated for carbon nanotubes (CNTs).
There are three parameters very important in carbon nanotubes (CNTs) as diameter, chirality angle,
and number of walls, and also has unique physical and chemical properties. There are two types for
fabrication first, chemical (chemical vapor deposition (CVD)) and second, other physical methods
(Arc discharge, Laser ablation).The graphite layer appears somewhat like a rolled up chicken wire
with a continuous unbroken hexagonal mesh and carbon molecules at the apexes of the hexagons [5].
They have two conduction bands and and two valence bands and , these are called Van
Hove Singularities observed in their electronic density of state (DOS) of these carbon nanotubes
(CNTs). The direct electronic band gap proportional to diameter for semiconducting carbon
nanotubes, while the direct band gap equal zero for metal carbon nanotubes so, they use in high
electrical current. It has typically have diameters range (1-2) nm for single walled nanotubes and (225) nm for multi-walled nanotubes as well as the length of nanotubes may be (0.2 - 5) m or some
centimeters, and the spacing distance between walls is 0.36nm. Here, a single wall nanotube is
prepared for optical proprieties applicable with optical system [6]. The potential applications of
carbon nanotubes have been attracting increasing attention from the photonics research community
[7]. It exhibits an exceptionally high third order optical nonlinearity and nonlinear saturable
absorption with ultrafast recovery time and broad bandwidth operation. Thus, carbon nanotubes are
becoming a key component towards the development of fiber lasers and nonlinear photonic
devices.They are making a more significant contribution towards the development of next generation
devises both from an academic and a commercial point of view. General rules have desired the
topology of the termination as a function of the Hamada indices (n, m). Carbon nanotubes can also
be opened ended, according to the integer n and m so, they may behave either semiconducting or
metallic.These calculations electronic structure for carbon nanotube shows about 1/3 of carbon
nanotube is metallic and 2/3 is semiconducting, depending on the nanotube diameter ( ) and chiral
angle (
). Another classification for carbon nanotubes depending on chiral vectors ( ), they are
Zigzag nanotube, armchair nanotube, and chiral nanotube. There are three parameters to develop
carbon nanotubes optical proprieties to work in optical system, Electronic structure of carbon
nanotubes, Saturable Absorption of carbon nanotubes, and Third order nonlinear for carbon
nanotubes. The high pressure carbon mono-oxide (HiPCO) has been one of the fabrication methods
for the mass production of carbon nanotubes.
The typical network architecture for OCDMA with broadcast star is shown in Figure2. It can
be seen that one of the key issues to implement OCDMA networking and communication is how to
2
International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976
6464(Print), ISSN 0976 6472(Online), Volume 5, Issue 10, October (2014), pp. 01-33 IAEME
encode and decode the users data such that the optical channel can be shared, that is, we need to
develop the practical encoding and decoding techniques that can be exploited to generate and
recognize appropriate code sequences reliably [8]. Therefore, The OCDMA encoders and decoders
are the key components to implement OCDMA systems. In order to actualize the data
communications among multiple users based on OCDMA communication technology, one unique
codeword-waveform is assigned to each subscriber in an OCDMA network, which is chosen from
specific OCDMA address codes, and therefore, different users employ different address codewordwaveforms.
Figure 1: illustrates all stages fabricated for carbon nanotubes (CNTs) from carbon atoms,
graphite sheet, and rolled as form tube
Optical code division multiple access (OCDMA) technique is an attractive candidate for next
generation broadband access networks [9-10]. Basic architecture and working principle of an
OCDMA passive optical network (PON) network, in the OCDMA-PON network, the data are
encoded into pseudorandom optical code (OC) by the OCDMA encoder at the transmitter and
multiple users share the same transmission media by assigning different OCs to different users. At
the receiver, the OCDMA decoder recognizes the OCs by performing matched filtering, where the
auto-correlation for target OC produces high level output, while the cross-correlation for undesired
OC produces low level output. Finally, the original data can be recovered after electrical
thresholding. Due to the all optical processing for encoding/decoding, OCDMA has the unique
features of allowing fully asynchronous transmission with low latency access, soft capacity on
demand, protocol transparency, simplified network management as well as increased flexibility of
QoS control. In addition, since the data are encoded into pseudo-random OCs during transmission, it
also has the potential to enhance the confidentiality in the network [11- 15]. In an OCDMA network
using on-off keying pattern, the users data is transmitted by each information bit 1 which is
encoded into desired address codeword. However, the transmitter does not produce any optical
pulses when the information bit 0 is sent. In terms of the difference of signal modulation and
detection pattern, OCDMA encoders/decoders are roughly classified into coherent optical
encoders/decoders and incoherent optical encoders/decoders. The incoherent optical
encoders/decoders employ simple intensity-modulation/direct-detection technology and the coherent
optical en/decoders are based on the modulation and detection of optical signal phase. As global
network infrastructures expand to support various type of traffic, photonic networks are expected to
take an important role. The increasing demand for bandwidth forces network infrastructures to be
large capacity and reconfigurable [16]. The efficient utilization of bandwidth is a major design issues
for ultra-high speed photonic networks, also it increases data rate (R), and decreases bit error rate
(BER) so as to perform with improved signal to noise (SNR).The roots of OCDMA are found in
3
International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976
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spread spectrum communication techniques. Spread spectrum was developed in the middle -1950s
mainly as a novel form of transmission overcoming the grid restrictions in radio bandwidth
allocations [17-21]. It is based on the idea of spreading the spectrum of the narrow band message
over a much wider frequency spectrum by means of digital codes [22-23].Within the category of
coherent systems, it is useful to further classify OCDMA systems based on the way in which phase
coding is applied to the optical signal field. Since optical phase can be manipulated in either the
frequency domain or the time domain, two types of coherent OCDMA systems are possible, as
Spectral Phase Coded Optical CDMA (SPC-OCDMA) and Temporal Phase Coded Optical CDMA
(TPC-OCDMA) [24-29]. Incoherent schemes use the simpler, more standard techniques of intensity
modulation with direct detection while
International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976
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Modulation (PPM) formats, and bit error rate (BER) and also for On- OFF Keying (OOK) formats
on Incoherent OCDMA 2-D wavelength hopping / time spread technique and coherent OCDMA
spectral phase encoding and temporal phase encoding for analysis and computing BER for silicon
optical devices and carbon nanotubes. Multiplexing technique is to increase the capacity of an optical
link beyond the limit available for serial transmission, a service provide can either install an
additional fiber or to use some form of multiplexing. Multiplexing allows multiple channels to be
transmitted simultaneously over a single optical fiber giving networkprovides access to the large
bandwidth capabilities of single fiber which can lead to increased throughput in the network without
laying additional fiber. Optical multiplexing can be achieved through multiplexing either in the time
domain, wavelength, or hybrid of both. Due to the large bandwidth (5GHz) and associated high bit
rates, the multiplexing process is beyond the capabilities of pure electronic methods and has to be
implemented optically as well. Code division multiple access (CDMA) is strong candidate for
creating effective multiple methods for the optical subscriber access network because of its
asynchronous access and code multiplexing [47].
ASSUMPTION SYSTEM AND SIMULATIONS
A single wall carbon nanotube (SWTN) can be described as a single layer of graphite crystal
that is rolled up into a seamless cylinder, one atom thick usually with a small number (perhaps 20 40) of atoms along the circumference and along length (micron) along the cylinder axis [49]. This
nanotube is specified by the chiral vector ( ).
= + (1)
Where n and m are two integers indices called Hamada integers, which often described by the
pair of indices (n, m) that denote the number of unit vectors n* and m* in the hexagonal
honeycomb lattice contained in this vector and where || =| | = | | =3 *
=0.246nm,where = 0.142nm the c-c bond length and are graphite lattice vector ,which two
vectors real space vectors[2], [3],[48][49]. The chiral vector makes an angle (
) called the chiral
angle with the zigzag or direction.as figure 3. The vector connects two crystallographically
equivalent sites O and A on a two dimensional (2D) graphene sheet where a carbon atom is located
at each vertex of the honeycomb structure [48]. The axis of the zigzag nanotube corresponds to
=
0, while the armchair nanotube axis corresponds to
= 30, and the chiral nanotube axis corresponds
to 0
30. The seamless cylinder joint of the nanotube is made by joining the line AB to the
parallel line OB in figure 3, in terms of the integer (n, m), the nanotube diameter ( ) is given by
equation (2).
=
(2)
The nearest neighbor C-C distance 1.421 or 0.142 in graphite, is the length of the chiral
vector and the chiral angle (
) is given by equation (3)
$ = %& (
( )
)
*!)
(3)
Thus, a nanotube can be specified by either its (n, m) indices or equivalent by and
.
International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976
6464(Print), ISSN 0976 6472(Online), Volume 5, Issue 10, October (2014), pp. 01-33 IAEME
Next, defined the unit cell OBBA of the 1D nanotube in terms of the unit cell of the 2D
honeycomb lattice defined by vectors and as shown figure 4 a) the unit cell and b) the
brillouin zone of two dimensional graphite as adopted rhombus and shaded hexagon, respectively,
where and are basis vector in real space, , and , are reciprocal lattice basis vectors. In the
(x, y) coordinates in figure 4, the real space basis vector and are expressed as equations (4)
and (5).
-, 0 , - = (
(-
0,2 = (
-, ) (4)
(-
3
-
) (5)
where a= | | = | | = 0.246nm A is the lattice constant of two dimensional graphite,
correspondingly the basis vectors , and , of the reciprocal lattice. Corresponding to a lattice
45
constant of
in reciprocal space, the direction of the basis vectors , and , of the reciprocal
6
(b=2.949nm A) hexagonal lattice are rotated by 30 from the basis vectors and of the hexagonal
lattice in real space, by selecting the first brilluoin zone as the shaded figure 3, the highest symmetry
points, , K, and M as the center, the corner, and the center of the edge respectively. The energy
dispersion relations are calculated for the triangle MK shown by the dotted lines in figure 3. To
define the unit cell for the 1D nanotube, defined OB as figure 3 as the shortest repeat distance along
the nanotube axis, there by defining the translation vector (T)
7 = 8& -& + 8 - (6)
International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976
6464(Print), ISSN 0976 6472(Online), Volume 5, Issue 10, October (2014), pp. 01-33 IAEME
8& =
( *!) )
:;
-*: 8 =
( *!))
:;
(7)
Where dR is the greatest common divisor of (2n+m, 2m+n) and given by equation (8)
:; = <
In which d is the greatest common divisor of (n, m). The magnitude of the translation vector E = |E|
|7| =
(F
:;
G =
(* !*)! ) )
(9)
Where L is length of the chiral vector and is the nanotube diameter. The unit cell of the
nanotube is defined as the area delineated by the vector T and . The number of hexagons, N
contained within the 1D unit cell of a nanotube is determine by the integers (n,m) and given by (10)
:;
(10)
The addition of single hexagon to the honeycomb structure figure 1 corresponds to the
addition of two carbon atoms. Assuming a value = 0.142 on a carbon nanotube, we
selected here (17,0), (12,5),(10,10),(16,2),(15,0), and (11,11) nanotubes. Since the real space unit
cell is much larger than that for 2D grapheme sheet, the 1D Brilluoin zone (BZ) for the nanotube is
much smaller than the BZ for single two grapheme 2D unit cell. Because the local crystal structure
of the nanotube is so close to that of a grapheme sheet and because the Brillouin Zone is small,
Brillouin Zone folding techniques have been commonly used to obtain approximate electron and
phonon dispersion relations for carbon nanotubes (n, m) with specific symmetry whereas the lattice
vector T, given by equation (6), and the chiral vector , given by equation (1), both the unit cell of
the carbon nanotube in real space, the corresponding vectors in reciprocal space are the reciprocal
lattice vectors (k2) along the nanotube axis and (k1) in the circumferential direction, which gives
discrete k values in the direction of the chiral vector . The vectors K and K are obtained from the
relation
;L MN = 3 OLN , where PQ RS are the lattice vectors in real and reciprocal space
respectively. Form K K can be written as
T& = G (8 2& + 8& 2 ) -*: T = G () 2& * 2 ) (11)
&
&
Where , and , are the reciprocal lattice vectors of a two dimensional graphene sheet
given by equation (5). The N wave vectors UK ( U = 0, , W 1) give rise to N discrete k vectors
in the circumferential direction. For each of U discrete values of the circumferences wave vectors a
one dimensional electronic energy band appears, whereas each U gives rise to 6 branches in the
phonon dispersion relations [48]. A nanotube (n,m) is formed by rolling a graphite sheet along the
chiral vector on the graphite sheet rolled. The nanotube can also be characteristized by the
diameter ( ) and the chiral angle
is with respect to zigzag axis
= 0 . A Single Wall Nanotube
(SWNT) can be visualized as a hollow cylinder, formed by rolling over a graphite sheet. It can be
uniquely characterized by a vector in terms of a set of two integers (n, m) corresponding to
graphite vectors and . By rolling a graphite sheet in different directions, two typical nanotubes
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International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976
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can be obtained: zigzag (n, 0), armchair (n, m), n= m, and chiral (n, m), where n>m>0, they are (17,
0), (15, 0), (12, 5), (16, 2), (10, 10), and (11, 11). The lattice constant and intertube spacing are
required to generate a SWNT bundle, and MWNT, the most experimental measurements and
theatrical calculations, agree that on average the C-C bond length and intertube ( = 0.34 )
[49]. Thus, equations (1) and (2) can be used to model various tube structures and interpret
experimental observation. They now consider the energetics or stability of nanotubes; strain energy
caused forming a SWNT from a graphite sheet is proportional to
per tube or Z per atom [3].
XY
XY
Typical experimentally observed SWNT diameter is between (0.6 nm 2.0 nm) while smaller
(0.4nm) or larger (3.0nm). In simplest model [3], the electronic properties of a nanotube derived
from the dispersion relation of a graphite sheet with the wave vectors (K[ , K\ ), [3], [7].
]^T_ , T` a = cd e& + f ghi(
) ghi .
(T_ -
0 + fjdk (
T` -
) (12)
T` -
Where lm is the nearest neighbor hopping parameter and a lattice constant (ln = 2.5eV3.0eV) from different sources and a=0.246nm. When the graphite is rolled over to form a nanotube,
a periodic boundary condition is imposed along the tube circumference or the C directions. This
condition quantizes the two dimensional wave vector k = (K[ , K\ ) along this direction. The k
satisfies k.c=2op are allowed where q is an integer. This leads to the following condition at which
metallic conductance occurs as equation (13)
(n - m) = q metallic or (2n + m) = 3q (13)
Semiconducting
The top half of the energy curve corresponds to the conduction o energy band while the
bottom half corresponds to the valence o energy band. The conduction and valence band come into
contact at the six corners (high symmetry points k) in the Brillouin zone, implying that 2D graphite
is a zero gap semiconductor, when s=0, the valence and conduction band become symmetric a ball
E=qrs this is given by equation (12) and lm = 2.9 eV. The positive sign is for the conduction band
and the negative one for the valence band. In contrast to Si, which is an indirect band gap
semiconductor and asymmetric band structures for electron and holes, grapheme has symmetric
conduction and valence bands. The energy valleys are located at the corners of the Brillouin zones,
which are usually referred as the Fermi points. The basis vectors in the reciprocal lattices,S . The
periodic boundary condition imposed along the circumference direction restricted the wave vectors
to
k.c = 2oq
(14)
where k is an allowed wave vector and q is integer which is the quantum number [50] [58]. The
conductance for SWNT, a SWNT rope, or MWNT given by equation (15)
t = tu v = .
w Z
0 v (15)
International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976
6464(Print), ISSN 0976 6472(Online), Volume 5, Issue 10, October (2014), pp. 01-33 IAEME
R= 6.5*10 ohm [24]. The knowledge of this limit (which only depends on the communication
channel) allows evaluating the performance of the system, and finding the guidance to its
improvement. In particular, for a linear communication channel with additive noise, and a total
signal power constraint at the input, the fundamental limit to the information capacity is given by the
celebrated Shannon formula [16],[ 37].
= |B@} [1 +
(16)
Where W is the channel bandwidth, u is the average signal power, and is the average
noise power. In comparison, the standard On- Off Keying (OOK) procedure where the information
in encoded via a train of nonoverlapping pulses with the presence of the pulse in a given time
corresponding to 1 and its absence to 0, leads to the transmission bit rate (data bit rate R) of one
bit per time slot. To avoid the interference of pulses from the adjacent slots, the size of the time slot
is generally chosen to be no less than the pulse width (), leading to the transmission rate up to
>@ R
mZ
>@ v
(17)
Where M indicates the number of possible slots within a PPM time frame and Pu = 1.0
10 denotes the throughput in bits/chip time. At the receiving end, the data are restored by the
OOK/PPM chip level optical receiver. Since the chip level receiver are dependent on the number
of photons (optical energy) per chip in the received frame when it uses silicon optical devices the
optical source power is 35.99 10 99, whereas when it uses carbon nanotubes the optical source
power is 214.8 10 99. That means when we use the carbon nanotubes devices the consumed
power is very low. Here, the time duration of time slot E = 3.33 10n sec or nanosecond in
silicon optical devices, but the time duration E = 2.58 10 ?C or femtosecond in carbon
International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976
6464(Print), ISSN 0976 6472(Online), Volume 5, Issue 10, October (2014), pp. 01-33 IAEME
nanotubes, therefore, the carbon nanotubes ultrafast switching based system, are formulated to attain
optimized performance of OCDMA technology. Parameters as indicated in table 1 are assumed for
achieving enhanced performance of carbon nanotubes based OCDMA in comparison to silicon
optical devices based devices which would in turn consume lesser power, miniaturized in dimension
and withstand higher temperature.
Table 1: parameters assumed in simulated OCDMA system
Parameters
Silicon optical devices
Carbon nanotubes
Time duration (E )
3.33 10n sec
2.58 10 sec
Data rate (P )
3.00 10 ,=9?/?C
7.7519 10 ,=9?/?C
Code weight (w)
W=3,5,7
W=3,5,7
Load resistance (RL)
50 10
12.9 10
Temperature for material
300K
973 K
n
Refractive index ( )
2 10 /99
1.55 10 /99
Source power laser (mm )
35.99 10 99
214.8 10 99
Recharge electron (e)
1.6 10
1.6 10
Light of speed
3 10
3 10
Threshold value (Th)
1 10 99
1 10 99
Boltzmanns constant (R )
1.38 10 /R
1.38 10 /R
Area of devices
2.5 10
2.5 10
Length of code for OOK
n=1000
n=1000
formats
Length of code for PPM
n=375
n=375
formats
Throughput
in
bits/chip
1.0 10
1.0 10
timePm
Noise for MAI
6.5 10 99
6.5 10 99
Band gap energy (q )
1.12 C
2.9 C
Time chip (E )
5.181 10 ?C
5.181 10 ?C
Wavelength center ( )
1550 10
1550 10
10
International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976
6464(Print), ISSN 0976 6472(Online), Volume 5, Issue 10, October (2014), pp. 01-33 IAEME
] =
-jj cd
:8
.
:8
(18)
where q the energy band gap for semiconductor which has two conduction bands and two
valence bands as shown in figure 5 which illustrates how to work with two van hove singularities ,
with Fermi energy lm = 2.9 C. If (2n+m) = 3q 0, the carbon nanotubes would be 2/3
semiconductor from equation (13). The Kinetic energy (q ) form the lowest subband is determine by
the minimum value given by equation (20)
Mj. = (:
(19)
Where is the diameter of the carbon nanotube the energy output for CNTs are given by
equations (20)
](M8 ) =
( -jj cd
And
]d =
( -jj cd
eT8 + ( (: )
8
(20)
(21)
Where qm is energy gap with normal temperature for graphite. Subsequently from equations
(20) and (21) we get equation (20) for ]d8 , the output energy band gap.
]d8 =
](T8 )
]d
(22)
The output energy band gap for carbon nanotubes depends on doping the electron density of
states in during fabrication and expressed by equation (23).
(]T ) = ( 3 -
jj cd
](T8 )
e](T8 )(] )
(23)
From the equations 20, 21, 22, 23 has got results as shown in figure 6 a and b has been
obtained which calculated is nanotubes the energy band gap has positive as well as negative values,
that is the carbon nanotubes show very high symmetry in (a) and (b) of figure 6 which illustrate (17,
0), (12, 5), (15, 0), and (16, 2) for energy gap has two van hove two conduction bands ( , )
and two valence bands ( ) symmetries in both side positive and negative in energy gap
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depend upon doping in electronic density of states (DOS) as in case of semiconductor carbon
nanotubes, while (10,10), and (11,11) these have one conduction band and valence band these
behave metallic carbon nanotubes because band gap is zero as shown figure 6 a and b..In metal
carbon nanotubes the band gap between one conduction band and one valence band is zero while in
semiconductor carbon nanotubes have band gap between two conduction bands and two valence
bands. The incident light (photon) is observed by valence band ( ) to excite electron to conduction
band ( ) leave a hole in and move electron from valence band ( ) to and then leave hole in
and move electron from to conduction band () to move to causing the flow of electric
current is called van hove singularities as in figure 5 where energy gap is very symmetrical and low
consumption optical power along life time as shown in figure 6 a and b.
Figure 6 (a): the results for some carbon nanotubes (17, 0), (12, 5), and (10, 10) to get energy
gap with relation DOS in this system
Figure 6 (b): the results for some carbon nanotubes (16, 2), (15, 0), and (11, 11) to get energy
gap with relation DOS in this system
The energy corresponding to the symmetric transition p=q for Semiconducting (S) and
Metallic tubes (M) follows the relations with one p orbit approximation equation (24) and (25).
[3] - [8], [48-63].
12
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] =
-jj cd
:8
(24)
-jj cd
:8
(25)
Figure 6 (c): the results for Kataura plot for some carbon nanotubes behavior either as
semiconducting or as metallic energy gap is relation to carbon nanotube diameters in the
system metallic energy gap with relation carbon nanotube diameters in this system
3.2 Saturable Absorption of Carbon Nanotubes (CNTs)
The optical absorption of CNTs is of saturable, intensity-dependent nature, it is a suitable
material to employ for passively mode-locked laser operation. Passive mode locking is achieved by
incorporating an intensity-dependent component into the optical system. The typical absorption of a
suspension of CNT fabricated by the high pressure carbon monoxide method (HiPCO) and measured
by a spectrometer. This is generally a saturable absorber which absorbs the light which is incoming
linearly up to a given threshold intensity, after which is saturates and becomes transparent optical
power intensity for output with losses 5% from input incident optical power intensity. Such saturable
absorbers discriminate in favor of pulse formation over continuous wave lasing. This is one of the
key advantages of carbon nanotube based devices as has been achieved passive in mode locked
operation not only in the C (1530nm 1565nm) and L (1565nm 1625nm) bands but covering also
the wavelength () range from (1Um - 2Um) using single wall carbon nanotube saturble absorber [7],
[64], [65]. The three parameters the non-linear saturable losses (r = 0.445), the modulation depth
or the linear saturable losses (m = 0.05), and saturable intensity(r6 = 7.89 v|/ ), together
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response time (= 1.85 ps) give us the location of the applicability of carbon nanotubes for passive
mode locking applications.
() =
+ r
(26)
The equation (26) gives the relates between the various parameters where () is optical
intensity for carbon nanotubes and comprises of information. We selected for simulation only two
carbon nanotube diameters 1.33nm and 1.185nm carbon nanotubes to get optical intensity
relationship with wavelength () from (500nm 3000nm). We see increasing optical intensity with
increasing wavelength because the absorption is decreasing also as shown in figure 7 (a). Another
relationship between the energy gap with the wavelength is as per equation (27).
] =
(27)
Figure 7 (a): illustrates the results for optical intensity (a, u) in satuarble absorption for carbon
nanotubes (1.33nm, 1.185nm)
The saturable absorption in carbon nanotube is achieved from the relationship of wavelength
and absorption that means when the wavelength increases in this system the absorption decreases.
Specifically of the wavelength center (1550nm), the third window in optical frequency, the
absorption is approximately (0.02 d B/km) from equation (28) as also as shown in figure 7 (b). [7],
[66], [67].
= h & (7) (28)
&
Where T is transmittance optical intensity and can be derived from equation (29)
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Figure 7 (b): illustrates the results for optical absorption (a, u) in satuarble absorption for
carbon nanotubes (1.33nm, 1.185nm)
7 = &
&!
k-8
+ *k
(29)
The transmittance results in figure 7 (c) which illustrates reverse proportion with absorption it
means the absorption is decreasing when the wavelength is increasing but the transmittance is
observed to be increasing as shown in figure 7 (c). This also supports optical system application and
can be used with Erbium Doped Fiber Amplifier (EDFA) for pumping optical power intensity of the
transmitting signal so that it can be used with Wavelength Division Multiplexing (WDM) and
Optical Code Division Multiple Access (OCDMA) to bring in improvement performance of optical
system applications with increasing data rates.
Figure 7 (c): illustrates the results for optical transmittance (eV) in satuarble absorption for
carbon nanotubes (1.33nm, 1.185nm)
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Figure 8: the results for optical power output (d B m) in saturable absorption for carbon
nanotubes (CNTs)
This also supports optical system application and can be used with Erbium Doped Fiber
Amplifier (EDFA) for pumping optical power intensity of the transmitting signal so that it can be
used with Wavelength Division Multiplexing (WDM) and Optical Code Division Multiple Access
(OCDMA) to bring in improvement performance of optical system applications with increasing data
rates.
Figure 9: the results for optical intensity in saturable absorption for carbon nanotubes (CNTs)
3.3 Third Order Nonlinearity of Carbon Nanotubes
The third order nonlinear material can be considered for optical switching, routing and
wavelength conversion. Optical nonlinearity is due to optical intensity dependent nonlinear response
of dielectric material. When the optical intensity of the propagating light is dielectric material is low,
stimulated polarization is linearly proportional to optical intensity. However, at high optical
intensity, the simulated polarization (P) exhibits a nonlinear response to the optical electric field (E),
as described by equation (30).
= u ( () . q + () . q + () . q (30)
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Where () , () , () correspond to the linear, the second order nonlinear, and third
order nonlinearity susceptibility respectively. It has been reported that some types of carbon
nanotubes present a high () , however, there is not much active research on exploiting this property.
On the other hand, the high values of () calculated theatrically and experimentally are of great
interest. There refractive index in carbon nanotubes can be described by equation (31). [49] - [66].
* =
Where Re stands for the real part the optical field is assumed to polarized so that only is components
[[[ () , (n=m = 1) is refractive index in free space (air). We have another equation to get
refractive index to get from simple equation (32)
* =
j
(32)
Where v is the optical frequency if we take wavelength (1550 nm) that means( = 1.5
10 | ) is high. The third order susceptibility of carbon single walled nanotube from Z-Scan
spectroscopy was estimated for the same . [[[ () can be expressed by equation (33)
___ (() = (;( ) + () ( )
(33)
(3 *d j d *k is the imaginary part of () . The values of real and imaginary part of ()
are being of the carbon single wall nanotubes, the vacuum permittivity (m ). The nonlinear
relationship between the average electrical fields inside materials (D) and the incoming optical (E)
field, nonlinear effects is defined the tensor of optical susceptibility x, which is the transformation
matrix of the incoming E vector to get the result polarization (P) vector inside materials given by
equation (34)
&
d ( ]( jdk]
&
&
(35)
According equation (34) and (35) we can get new equation (36)
_ = ] + *k ] + * ](
(36)
We can get results for optical polarization intensity in third order nonlinearity for carbon
nanotubes the maximum optical intensity between wavelengths (1540nm 1550nm) for single wall
nanotube by equation (36) as shown in figure 10 (a).
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Figure 10 (a): explains optical polarization intensity in third order nonlinearity for carbon
nanotubes (CNTs) also single wall nanotubes (SWNTs)
The optical intensity in third order nonlinearity we get maximum in wavelength center at
(1550 nm), the third window in optical systems and covers large bandwidth to support optical
integrated electronic circuit to work in optical frequencies to improve performance for optical system
application as shown figure 10 part (b). The relationship between the potential V (E) and the
electrical field (E) will be symmetrical given by equation (37)
(]) = [. 0 ] + .(0 * ]( + .f0 * ]f ]
&
&
&
(37)
The symmetrical potential of the material under the influence of an incoming signal optical E
field implies that the material is contrast electrical that electron polarization in positive and negative
direction as shown figure 10 part (c). The optical potential in third order nonlinearity the ultrafast
optical switches to get approximately (1.85 ps) or few femtosecond ( = 1015 ), fast relaxation
process in the order of 100s of femtoseconds combined with an extremely high nonlinear coefficient
can be observed in real carbon nanotubes devices in fabricated optical integrated circuit in ultra large
scale integrated circuits (ULSI). It is also very high third nonlinear and ultrafast respond times [7],
[68], [69].
Figure 10 (b): explains optical power intensity in third order nonlinearity for carbon
nanotubes (CNTs) also single wall nanotubes (SWNTs)
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Figure 10 (c): explains optical potential in third order nonlinearity for carbon nanotubes
(CNTs) also single wall nanotubes (SWNTs).
3.4 The Coherent OCDMA with the Nonlinearity
In the coherent approach to optical CDMA, the information is first encoded in pulse train
using standard OOK. The OCDMA expresses encoder and decoder; here focus SPC-OCDMA
encoder and decoder for both optical fiber silicon and carbon nanotubes. Here, we get improved
results with parameter signal to noise ratio (SNR) using carbon nanotubes than silicon optical fiber.
When the number of users (M) are increasing, the signal to noise ratio is decreasing because the
carbon nanotubes has high energy band gap and high refractive index third nonlinearity, that means
the enhancement the nonlinearity properties in optical code division multiple access (OCDMA) we
got these result by equation (38) as shown figure 11.
G; =
-T
G ! -T (&)
&
&!c : G -T (&) .
0
7
(38)
Where sw6 the optical power input for coherent OCDMA system, M is number of users of
the system, d is distance silicon or carbon for area integrated and others parameters mention in
previous section in assumption [16].
Figure 11: represented the SNR in the coherent OCDMA for silicon optical devices and carbon
nanotubes
First, we substitute the optical fiber parameters in equation (38) and get the result as in figure
8 curve 1, decreasing SNR when the increasing number of users in the system, subsequently, we
substitute the carbon nanotubes parameters in same equation to get result as shown figure 11 curve 2.
For improved system, we need to improve SNR values and it is observed that the SNR values with
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carbon nanotubes are better than silicon optical devices. The figure 12 illustrates about data bit rate
which is observed to be decreasing when the number of users (M) increase, that means that signal to
noise ratio SNR decreases while substituting parameters for silicon optical devices and carbon
nanotubes [16], as governed by equation (39)
Z
Z
Z Z Z
Z
() .Z0
]
P = [1 B@} 1 + C
(39)
But the data bit rate (R) in coherent OCDMA with carbon nanotubes are better than silicon
optical devices, this is clearly observed from curve 2 for carbon nanotubes and curve 1 for silicon
optical devices as shown in figure 12.
Figure 12: represented the data bit rate (R) in the coherent OCDMA for silicon optical devices
and carbon nanotubes
The figure 13 illustrates bit error rate (BER) in the same system for carbon nanotubes
increasing from 10 9@ 10 while the silicon optical devices BER from 10 9@ 10n , to make
the improvement in system performance governed by equation 40. This indicates the effect of SNR
to improved coherent system. The encoder works when using silicon optical devices the light spreads
by lens but while using carbon nanotubes ( single walled carbon nanotubes ) (SWNTs) making
narrow band, the light focuses on one point on the filter nanotubes that is observed to be the most
active in applications of passive optical CDMA network [16].
(
]; = * _
&
G;d
& c : G -T (&) .
0
7
(40)
Figure 13: represented the bit error rate (BER) in the coherent OCDMA for silicon optical
devices and carbon nanotubes
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7
. 0
-T
Where W is the carrier hopping incoherent OCDMA system with wavelength that is the
original OOK signal is passed through a filter (e.g, prism or grating based) that separates W
components differently by their central wavelength,| the single channel spectral width |u is its
central frequency, is the frequency spacing between different carriers.t is the gain to the crosstalk
between channels equal (t = 5 ) [70] .
Figure 14: represented the SNR in the incoherent OCDMA for silicon optical devices and
carbon nanotubes
The figure 15 illustrates the data bit rate (R) is also decreasing when the SNR is decreasing
with increased number of users; this is given by equation (42). The data rate in the system with
carbon nanotubes is better than with silicon optical fiber as shown in figure 15. Here, the curve 2 is
for carbon nanotubes results, while the curve 1 for silicon optical devices [16].
7
& c
&
; = 7 [& d & + _
: G -T (
G (&)
((
7
(42)
The figure 16 illustrates that the bit error rate (BER) is increasing when the number of users
are increasing, but the SNR is decreasing on proportional relationship between numbers of users (M)
and BER but reverse relationship between BER and SNR. This is given by equation (43) and as
shown in figure 16, the incoherent OCDMA with carbon nanotubes is observed to be better than
silicon optical devices as shown by the curve 2, for carbon nanotubes and the curve1 for silicon
optical devices [8], [16].
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6464(Print), ISSN 0976 6472(Online), Volume 5, Issue 10, October (2014), pp. 01-33 IAEME
Figure 15: represented the data bit rate (R) in the incoherent OCDMA for silicon optical
devices and carbon nanotubes
Figure 16: represented the bit error rate (BER) in the incoherent OCDMA for silicon optical
devices and carbon nanotubes
]; =
&
_(
& c : G -T (
G (&)
7
((
(43)
;=
M d
*72
(44)
Where K is the number of simultaneous users, E is the signaling period symbol interval , n
is the code of length, where each user is assigned a set of M codes, each corresponding to a particular
digit. In the M-ary system with M=8 [16].The data rate with carbon nanotubes as obtained result
represented by curve 2 is better than silicon optical devices as represented curve 1as shown figure
17. It is indicated that in the simulated system with the existing coding technique for PPM/OCDMA
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system, the bit error rate increases much more with silicon optical devices but the bit error rate is
very low with carbon nanotubes used = E = 2.58 10 ?C, source power of laser uu =
214.8 10 99, and refractive index = 1.55 10 /99 from table 1 [16],[18],[71][72]
Figure 17: represented the data rate (R) in the incoherent OCDMA by PPM format with
silicon optical devices and carbon nanotubes
Bit error rate in PPM/ OCDMA format is given by equation (45)
] 8 G )
]; =
) G )!(*))!
&
*!
7j
&
]
]8 G *) 8
7j
(45)
Let M is the number of simultaneous users and is the single pulse width used in silicon
optical devices and carbon nanotubes, W is code with W =8 different wavelength channel and
different values of q in silicon optical devices is q =1.12 e V, and carbon nanotubes is q =2.9 e
V. Then, as a function of number of users, the bit error rate (BER) performance codes C is affected
by the multiple access interference (MAI). In the limiting case where the noise due to spontaneous
emission in optical amplifier, detector dark current, etc., can be neglected as compared to the effect
of Multiple Access Interference (MAI). The multiple access interference affects the incoherent
OCDAM system. The bit error rate (BER) increases marginally with carbon nanotube as represented
by curv2 compared with silicon optical devices represented curv1 as shown figure 18.
Figure 18: represented the bit error rate (BER) in the incoherent for silicon optical devices and
carbon nanotubes
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Therefore, we can say that the Data Rate (R) incoherent OCDMA with OOK/OCDMA
format gives better results than PPM/OCDMA with carbon nanotubes (CNTs). In the OCDMA
system increasing the number of users decreases the data rate, while increasing the bit error rate
enhances the system performance. For the best performance of optical communication with highest
data rate and lowest bit error rate, we investigated the optimized OCDMA performance with carbon
nanotubes in comparison with silicon optical devices.
3.6 The OOK/ OCDMA Chip Level Receiver and Its Performance Analysis
In the OOK/ OCDMA system uses the (n, w, 1), the signature with optical pulse is sent for
data bit 1 while nothing is sent for data bit 0. Hence, we focus the Bit Error Rate (BER) for
OOK/OCDMA chip level receiver with carbon nanotubes less than BER with silicon optical devices
and we got result when the number of code length n=1000 is given by equation 17, resulting in
BER with carbon nanotubes as represented by curv2 very less than silicon optical devices
represented by curv1 as shown figure 19.Tthe BER can be given by equation (47) and equation (46).
7 =
ddT
(46)
Where the transmitted power is for OCDMA system, w is weight of the code, and n is the length
of the code.
L
2 = <
L&(&) ^ L a .& L
&
&
*
(47)
Figure 19: represented the bit error rate (BER) by OOK/OCDMA formats for silicon optical
devices and carbon nanotubes
3.7 The PPM/ OCDMA Chip Level Receiver and Its Performance Analysis
In M-ary PPm signaling format the symbol, j v={0,1,,M-1} is represented a
signature sequence at the slot and otherwise, there is not any pulse within all other slots the result
bit error rate can be given by equation (49) and equation (48)
= (&) (48)
(*&)
G&
L
: = & <( &)
L(&) ^ L a & (L + ) *
/
24
^&a
(G&)
*
(49)
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OCDMA system with PPM receiver can enhance the security of information transmission.
However, in the hardware implementation OCDMA system with PPM chip level receiver is more
complex than OOK chip level receiver system. Figure 20 illustrates the result for PPM/OCDMA
format with carbon nanotubes as represented by curv2 which is observed to be better than silicon
optical devices represented curv1. The result can be given by equation (49) and equation (48).
Figure 20: variations of the Bit Error Rate (BER) PPM format for silicon optical devices and
carbon nanotubes (CNTs)
Optical overlapping pulse position modulation (OPPM) chip level receiver [16],[8], [73],
whose difference from PPM chip level OCDMA is that it allows partial superposition of two
adjacent modulated signals or two adjacent slot with width and the overlapping depth index l, its
hardware is more complex than that of PPM chip level OCDMA system.
3.8 Performance Analysis of Two Dimensional Wavelength Hopping/ Time Spread
Incoherent OCDMA System
Comparative analysis is made for BER performance of 2-D incoherent OCDMA system with
carbon nanotubes and silicon optical devices. Figure 21 illustrates that the BER performance
OCDMA system with carbon nanotubes represented by curv2 is better than silicon optical devices
which represented curv1. Because, carbon nanotubes have high optical powermm = 214.8
10 99, band gap energy q =2.9 e V, high refractive index = 1.55 10 /99, and
duration time E = 2.58 10sec ,resulting in ultrafast switches performance better than in case
of silicon optical devices which has low power optical source mm = 35.99 10 99, band gap
energy q =1.12 e V, low refractive index = 2 10n /watt , and duration time E = 3.33
10n ?C. The result is given by equation (50) and equation (48) [74], [75], [76], [77].
L
()&)
2 = L ^()&)
a . T0 .&
L
&
()&)L
T
(50)
International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976
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Figure 21: represented the BER performance by 2-D WH/TS incoherent OCDMA for silicon
optical devices and carbon nanotubes (CNTS)
The spectral phase code can employ the binary codes with good properties which are widely
applied to the electrical wireless CDMA, such as m- sequences, Gold codes, etc. The optical signal
with spectral phase encoded in time domain. The optical signal with spectral phase encoded in time
domain looks like a low intensity pseudo noise burst (D), which is fed into the optical
communication network. Figure 22 illustrates the BER performance in spectral phase coherent
OCDMA with carbon nanotubes more better than silicon optical devices, we can say the spectral
phase encoding in OCDMA system is best among other types in OCDMA system, BER is given by
equation (51) and equation (48)
&
= <&
& ^ a . M0 .&
&
0
M
&
&
Where R = , and is the number of simultaneous subscribers in the network, B is solid lines, I is
number of interfering subscribers, P(I) is a random variable and satisfies a binomial distribution, and
l() represented the probabilities of false alarm and missed detection. The result obtained BER
performance with carbon nanotubes much better than silicon optical devices [8], [78].
Figure 22: BER performance by spectral phase encoding in coherent OCDMA with silicon
optical devices and carbon nanotubes (CNTS)
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Figure 23: model of temporal phase encoding OCDMA system with various noises
The BER performance in temporal phase encoding OCDMA system with carbon nanotubes
represented by curv2 gives better result than silicon optical devices represented by curv1 and
analyzed by equation (52) and equation (48) [8], [79]
2 = &
()2 () (52)
Where P(I) indicates the probabilities that subscribers among M-1 interfering subscribers,
and X () is the bit error rate with I.
() = ^&
a
(&)
(53)
And
2 = 7j () + 7j () (54)
&
() = j .
&
: (7)
*
(55)
Where * = 8 + k + and 8 =
f T 7
;F
Where K is the boltzmanns constant (1.38 10 /R) from table 1, T is the ambient
temperature ( ) Em =300K, B is transmission bit rate for silicon optical devices B= 3.00
10 ,=9?/?C and for B= 7.7519 10 ,=9?/?C, and load resistance for silicon optical devices is
50 10 ,while load resistance for carbon nanotubes 12.9 10 ..
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(56)
Where e is charge of electron, B is data rate, s the current of photodetector for carbon
nanotubes and silicon optical devices. The BER performance in temporal phase encoding OCDMA
system with carbon nanotubes is much better than silicon optical devices as shown figure 24. All
types of coherent OCDMA and all types of incoherent OCDMA with carbon nanotubes provides
comparatively improved performing system by way of getting highest data rate (Tb/s) and lowest bit
error rate (BER) than silicon optical devices.
Figure 24: represented the BER performance by temporal phase encoding coherent OCDMA
for silicon optical devices and carbon nanotubes (CNTS)
CONCLUSION
The carbon nanotube used in this work is single walled nanotubes whose electronic structure
is semiconducting. Optical integrated circuit has many advantages elastic in direction optical incident
and the move almost of optical power intensity and low consumption power, it needs low voltage
like (160mV 200mV) and input power in microwatt or milliwatt . This performs in bio-electronic
application. It has saturable absorption to efficient saturable absorbers optical power incident to get
output with losses 5% this is very best for work in passive optical network applications. This is one
of the key advantages of carbon nanotube based devices in passive mode locking operation. It
continues to work even in high temperature environments without affecting in its performance in the
system. The Absorption in carbon nanotube is very low 0.02 dB/km that means very accurate in
transfer the optical signal, their devices offer a very high nonlinear coefficient and fast response time
to reach 100s of femtosecond, ultrafast work optical switches used in many in communication
system applications, information technology, and sensors system.Three important parameters are
very important for any communication system, named signal to noise ratio SNR, Data rate R, and Bit
error rate BER. In optical code division multiple access (OCDMA) utilizing the nonlinear properties
of materials used in silicon optical devices and carbon nanotubes, bring in improvement in the
system performance. In Coherent as well as Incoherent optical CDMA, encoder is in transmitter and
decoder in receiver. But the coherent OCDMA has been observed to be better than incoherent
OCDMA, because of the poor signal to noise ratio in incoherent OCDMA and is demonstrated to be
more robust to the effect of nonlinearity in terms of bit error rate performance and SNR. Considering
the third order nonlinearity, carbon nanotubes are observed to be highly efficient providing very fast
response and are more suited to next generation components required in communication system
consuming much less power with time, extending the life of batteries used. Optimized design
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performance of OCDMA with carbon nanotubes (CNTs) based devices have been observed
providing highest data rate (R) and lowest bit error rate (BER) incorporating techniques like
OOK/OCDMA and PPM/OCDMA in Coherent as well as Incoherent OCDMA system. Firstly, the
incorporation of carbon nanotube, based devices result in improved system performance in
comparison to silicon optical devices, with increased data rate upto Tb/s and much reduced bit error
rate between 10 9@ 10n bits/sec. Next generation of optical communication system may
preferably incorporate carbon nanotubes based devices so as to achieve much higher data rate up to
Tb/s in comparison to present systems using silicon optical devices giving data rate upto Gb/s.
Besides, such systems with reduced energy source power realize in much longer life Nevertheless,
future requirements of ultrahigh speed internet, video, multimedia, and advanced digital services,
would suitably be met with incorporation of carbon nanotubes based devices providing optimal
performance.The Optical Wireless Communications (OWC) is a type of communications system that
uses the atmosphere as a communications channel. The OWC systems are attractive to provide
broadband services due to their inherent wide bandwidth, easy deployment and no license
requirement. The idea to employ the atmosphere as transmission media arises from the invention of
the laser. The visible light communication (VLC) based on Li-Fi (Light Fidelity)-The future
technology in optical wireless communication refers to the communication technology which utilizes
the visible light source as a signal transmitter, the air as a transmission medium, and the appropriate
photodiode as a signal receiving component.The system develops with carbon nanotubes (CNTs) to
improve for space communications but applied for indoor networks. Indoor optical wireless systems
face stiff competition from future WiFi.
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AUTHORS BIBLIOGRAPHY
Jafaar Fahad A.Rida Received his bachelor of Electronic and Communication
Engineering Technical Najaf Collage Iraq in 2003. He obtained M.Tech.
Communication System Engineering from SHIATS Allahabad India in 2012. He
is Pursing Ph.D in Communication System Engineering in Depart ment of
Electronics and Communication Engineering in SHIATS, Allahabad. He has
experience for five years with CDMA technical company and MW System. He
has published several research papers in the field of Optical Systems
Communication and Carbon Nanotubes Engineering.
Dr. A.K. Bhardwaj Allahabad, 16.01.1965, Received his Bachelor of
Engineering degree from JMI New Delhi in 1998; He obtained his M.Tech.
degree in Energy and Env. Mgt. from IITNew Delhi in 2005. He completed his
Ph.D in Electrical Engg. From SHIATS (Formerly Allahabad Agriculture
Institute, Allahabad- India) in 2010. He has published several research paper in
the field of Electrical Engineering. Presently heis working as Associate Professor
and HOD in Electrical Engg. Department, SSET, SHIATS Allahabad- India.
33