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I.
INTRODUCTION
approximately 50 to 100 nm, dislocation activity dominates at test temperatures of <0.5 Tm. As the grain size
decreases, the dislocation activity apparently decreases.
The essential lack of dislocations at grain sizes below
50 nm is presumably the result of the image forces that
act on dislocations near surfaces or interfaces. The lack
of dislocations in small, conned spaces such as singlecrystal whiskers has been known for many years.[5] The
creation of new dislocations is also dicult as the grain
size reaches the lower end of the nanoscale (<10 nm).
The stresses needed to activate dislocation sources, such
as the FrankRead source, are inversely proportional to
the distance between dislocation pinning points. Because
nanoscale grains will limit the distance between such
pinning points, the stresses to activate dislocation
sources can reach the theoretical shear stress of a
dislocation-free crystal in the smallest grain sizes
(~2 nm). Thus, in the smallest grain sizes, there may
be new phenomena controlling deformation behavior. It
has been suggested that such phenomena may involve
GB sliding or grain rotation accompanied by shortrange diusion-assisted healing events.[6] A review of
these studies[14,612] shows that the data obtained by
dierent investigators are not completely consistent.
Various aspects characterizing these consistencies and
limitations are identied. It is suggested that a number
of issues need to be fully addressed in order to provide a
METALLURGICAL AND MATERIALS TRANSACTIONS A
1
II.
de
r
P
t
Pf
r
P
r
r
Ph Wh
lZ
n ER
rde
0
where Wh is the work of the homogeneous deformation by unit volume, ER is the extrusion ratio,
r is the ow stress, and e is the strain. However,
for large strain values in hot-working processes, Ph
can be expressed by
ln ER
Ph r
is the mean true stress; i.e.,
where r
Ph
ln ER cte
r
(c) The friction Pf =
r can be calculated by the following equation:
Pf
1; 5 ln ERfexp4lL=D0 1g
r
is the mean true stress, ER is the extrusion
where r
ratio, l is the friction, L is the extruded length
until the cone, and D0 is the container diameter.
The l can be calculated as
l
D0 dp
4p dx
where D0 is container diameter, p is the instantaneous pressure, and x is the axial distance along
the container.
r can be calculated by
(d) The redundant work Pr =
the following equation:
Pr 1:5Ph
ln ER
r
rc
where rc is the interpolated ow stress obtained from
data of hot compression tests in the extruded alloy.
Equations [2] and [3] were used to estimate the mean
equivalent strain and mean strain rate, respectively.[38]
3324VOLUME 40A, DECEMBER 2009
dl
) e
l
Z
0
dl
l
ln
l
l0
6VD2 tan u
DC
e 3 C 3 2 ln
DE
DC DE
2
3
III.
Fig. 1(a) Hot extrusion data for nanostructured Al-3.0Fe-0.42Cu0.37Mn powder alloy, showing applicability of the hyperbolic sine
law (Eq. [1]). (b) Hot extrusion data from (a) plotted together with
hot extrusion data from the literature (commercial-purity aluminum,
99.73Al-0.21Fe-0.06Si)[40] and creep data from the literature (superpurity aluminum, 99.9945 pct Al),[41] showing the compatibility of
hot-working data obtained at high strain rates and strains from both
conventional material and nanostructured powders with those of
creep obtained at low strain rates and strains. Data plotted according to Eq. [1].
aluminum creep[41] plotted with the experimental extrusion data obtained in the present work. The similarity of
the stress dependence of the extrusion strain rate to that
of extrusion and creep of conventional material is
somewhat surprising, mainly with respect to creep,
because the extrusion strain rates are several orders of
magnitude higher than those found in creep. However,
this observation conrms our suggestion that the hot
extrusion of nanostructured powders may be considered
an extension of any other hot-working process.
The data shown in Figure 1(b) extend over a 1010-fold
range of strain rates. Bearing in mind the large range of
strain rates and taking due note of the dierences in the
purity of the materials, the congruence of the hot-working
data to the creep equations is exceptionally close, resulting in similar values of the equation constants. However,
there is a slight dierence in the slope n between the data
reported in the literature and our experimental data. For
creep of the high-purity aluminum, n = 4.8, and for the
METALLURGICAL AND MATERIALS TRANSACTIONS A
Fig. 2(a) Hot extrusion data for nanostructured Al-3.0Fe-0.42Cu0.37Mn powder alloy, hot extrusion data from literature (commercial-purity aluminum, 99.73Al-0.21Fe-0.06Si),[40] and creep data from
the literature (super-pure aluminum, 99.9945 pct Al),[41] plotted to
illustrate the dierence in the slope n of all the materials,
Z e_ expDH=RT: (b) Plot of sinh(ar) at a constant strain rate as a
function of 1/T, from which the slope is used to determine the hotworking activation energy.
1
d log fr T
dT1
dT
2; 3R
e_
r
Summary of Constants n, a, DH, and A3 for Hot Extrusion Data for Nanostructured Aluminum Powder Alloy
and Hot Extrusion and Creep Data from Literature
n
4,0
4,0
4,0
4,0
4,0
4,8
4,8
4,8
4,8
4,8
3.6
3.6
3.6
a (9103 MPa1)
43.51
43.51
43.51
43.51
43.51
44.96
44.96
44.96
44.96
44.96
47.83
47.83
47.83
DH (kJ/mol)
156.5
156.5
156.5
156.5
156.5
156.1
156.1
156.1
156.1
156.1
164.8
164.8
164.8
Remarks
A3
0.11
0.96
1.33
1.47
1.79
1.03
0.43
0.63
0.87
1.08
3.27
4.00
3.64
9
9
9
9
9
9
9
9
9
9
9
9
9
10
10
1010
1010
1010
1010
1012
1012
1012
1012
1012
1011
1011
1011
[40]
Fig. 5TEM micrographs showing (a) nanostructured Al-alloy produced by hot extrusion process and corresponding electron diraction
pattern (EDP), showing fcc-Al diraction rings, indicating a polycrystalline structure and small grain dimension; (b) and (c) one of the mechanisms for dislocation multiplication under stress, which is visible on a dislocation segment pinned at its ends, while the double white arrowhead
(c) denotes the DLs interacting with SBs, indicated by black lines). Specimen extruded at 425 C and 29.3 s1 (magnications (a) and (b) 166,000
times).
3328VOLUME 40A, DECEMBER 2009
IV.
ACKNOWLEDGMENTS
The authors acknowledge the nancial support of
the Fundacao de Amparo a` Pesquisa do Estado de
Sao Paulo (FAPESP) and the Conselho Nacional de
Desenvolvimento Cient co e Tecnologico (CNPq).
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