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ATF-52189

High Linearity Mode[1] Enhancement


Pseudomorphic HEMT in SOT 89 Package

Data Sheet

Description

Features

Avago Technologiess ATF-52189 is a single-voltage high


linearity, low noise E-pHEMT FET packaged in a low cost
surface mount SOT89 package. The device is ideal as a
medium-power, high-linearity amplifier. Its operating frequency range is from 50 MHz to 6 GHz.

Single voltage operation

ATF-52189 is ideally suited for Cellular/PCS and WCDMA


wireless infrastructure, WLAN, WLL and MMDS application, and general purpose discrete E-pHEMT amplifiers
which require medium power and high linearity. All devices are 100% RF and DC tested.

SOT 89 standard package

Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data
3. Conform to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power

High Linearity and P1dB


Low Noise Figure
Excellent uniformity in product specifications
Point MTTF > 300 years[2]
MSL-2 and lead-free
Tape-and-Reel packaging option available

Specifications
2 GH, 4.5V, 280 mA (Typ.)
42 dBm Output IP3
27 dBm Output Power at 1dB gain compression
1.50 dB Noise Figure
16.0 dB Gain
55% PAE at P1dB

Pin Connections and Package Marking

LFOM[3] 12.5 dB

Applications
Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier
for Cellular/PCS and WCDMA wireless infrastructure

2GX
#1
#2
RFin
GND
Top View

Driver Amplifier for WLAN, WLL/RLL and MMDS


applications
#3
RFout

#3
#2
RFout
GND

#1
RFin

Bottom View

Notes:
Package marking provides orientation and identification:
2G = Device Code
x = Month code indicates the month of manufacture.

General purpose discrete E-pHEMT for other high


linearity applications

ATF-52189 Absolute Maximum Ratings[1]


Symbol

Parameter

Units

Absolute
Maximum

Vds

DrainSource Voltage[2]

Vgs

GateSource Voltage[2]

-5 to 1.0

Vgd

Gate Drain Voltage[2]

-5 to 1.0

Ids

Drain Current[2]

mA

500

Igs

Gate Current

mA

46

Pdiss

Total Power Dissipation[3]

1.5

Pin max.

RF Input Power

dBm

+27

Tch

Channel Temperature

150

Tstg

Storage Temperature

-65 to 150

Thermal Resistance[2,4]
ch-b = 52C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is 25C.
Derate 19.25 mW/C for TB > 72C.
4. Channel-to-board thermal resistance
measured using 150C Liquid Crystal
Measurement method.

ATF-52189 Electrical Specifications


TA = 25C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

Vgs

Operational Gate Voltage

0.62

Vth

Threshold Voltage

Vds = 4.5V, Ids = 16 mA

Ids

Drain to Source Current

Vds = 4.5V, Vgs = 0V

0.28

14.8

Gm

Transconductance

Vds = 4.5V, Gm = Ids/Vgs;


Vgs = Vgs1 Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V

mmho

1300

Igss

Gate Leakage Current

Vds = 0V, Vgs = -4V

-20.0

0.49

NF

Noise Figure

f = 2 GHz
f = 900 MHz

dB
dB

1.50
1.25

Gain [1]

f = 2 GHz
f = 900 MHz

dB
dB

14.8

16.0
16.5

17.8

OIP3

Output 3rd Order Intercept Point [1]

f = 2 GHz
f = 900 MHz

dBm
dBm

38.5

42.0
42.0

P1dB

Output 1dB Compressed[1]

f = 2 GHz
f = 900 MHz

dBm
dBm

25.5

27.0
27.2

PAE

Power Added Efficiency

f = 2 GHz
f = 900 MHz

%
%

40.0

55.0
50.0

NF

Noise Figure

f=900 MHz
f=2.0 GHz
f=2.4 GHz

dB
dB
dB

1.25
1.50
1.60

Gain [1]

f=900 MHz
f=2.0 GHz
f=2.4 GHz

dB
dB
dB

14.8

16.5
16.0
13.5

17.8

OIP3

Output 3rd Order Intercept Point [1]

f=900 MHz
f=2.0 GHz
f=2.4 GHz

dBm
dBm
dBm

38.5

42.0
42.0
41.0

P1dB

Output 1dB Compressed [1]

f=900 MHz
f=2.0 GHz
f=2.4 GHz

dBm
dBm
dBm

25.5

27.2
27.0
26.0

Vds = 4.5V, Ids = 200 mA

continued on next page


22

Symbol

Parameters and Test Conditions

PAE

Power Added Efficiency

ACLR

Adjacent Channel Leakage


Power Ratio [1,2]

Units

Min.

Typ.

Max.

f=900 MHz
f=2.0 GHz
f=2.4 GHz

%
%
%

40.0

50.0
55.0
52.0

Offset BW = 5 MHz
Offset BW = 10 MHz

dBc
dBc

-58.0
-66.0

Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 1.
2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -8 dBm
- Channel Integrate Bandwidth = 3.84 MHz

Input Matching Circuit


_mag=0.76
_ang=-131.3

Input

Output Matching Circuit


_mag=0.32
_ang=-176.6

DUT

Output

Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE
and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and
VSWR. Circuit losses have been de-embedded from actual measurements.

Product Consistency Distribution Charts [1,2]


150

150

Stdev=0.30

Stdev=0.35
120

90

3 Std

+3 Std

60

FREQUENCY

FREQUENCY

120

90

3 Std

60

30

30

41.5

42

42.5

43

43.5

26.25

26.75

28.25

150

150

Stdev=0.10

Stdev=0.16
120

90

3 Std

FREQUENCY

120

FREQUENCY

27.75

Figure 3. P1dB @ 2 GHz, 4.5V, 200 mA.


LSL = 25.5 dBm, Nominal = 27.1 dBm.

Figure 2. OIP3 @ 2 GHz, 4.5V/200 mA.


LSL = 38.5 dBm, Nominal = 42.4 dBm.

+3 Std

60

0
15.5

90

3 Std

+3 Std

60

30

30

0
16

16.5

GAIN (dBm)

Figure 4. Gain @ 2 GHz, 4.5V, 200 mA.


LSL = 14.8 dBm, Nominal = 16.1 dBm,
USL = 17.8 dB.

27.25

P1dB (dBm)

OIP3 (dBm)

+3 Std

17

1.25

1.5

1.75

NF (dBm)

Figure 5. NF @ 2 GHz, 4.5V, 200 mA.


Nominal = 1.5 dBm.

Notes:
1. Distribution data sample size is 500 samples
taken from 3 different wafers. Future wafers
allocated to this product may have nominal
values anywhere between the upper and
lower limits.
2. Measurements are made on production test
board, which represents a trade-off between
optimal OIP3, P1dB and VSWR. Circuit losses
have been de-embedded from actual
measurements.

Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The devices optimum OIP3 and P1dB measurements were determined using a Maury Load Pull System at
4.5V, 200 mA quiesent bias.
Typical Gammas at Optimum OIP3 [1]
Freq
(GHz)

Gamma Source
Mag
Ang (deg)

Gamma Load
Mag
Ang (deg)

OIP3
(dBm)

Gain
(dB)

P1dB
(dBm)

PAE
(%)

0.9

0.7511

-132.82

0.6444

-157.38

42.0

16.5

27.2

49.7

2.0

0.7577

-131.31

0.3236

-176.55

42.0

15.7

26.8

54.9

2.4

0.7625

-128.49

0.2665

-148.09

41.0

13.6

26.5

49.5

3.9

0.7432

-94.91

0.4125

-98.27

40.0

10.8

27.3

49.1

Typical Gammas at Optimum P1dB [1]


Freq
(GHz)

Gamma Source
Mag
Ang (deg)

Gamma Load
Mag
Ang (deg)

OIP3
(dBm)

Gain
(dB)

P1dB
(dBm)

PAE
(%)

0.9

0.7786

139.82

0.5494

-177.76

38.6

17.3

28.4

58.3

2.0

0.7052

-168.54

0.6981

-165.37

37.5

14.8

29.0

48.6

2.4

0.7117

-161.45

0.6624

-159.44

37.3

12.0

29.3

48.2

3.9

0.3379

-100.92

0.6151

-126.28

37.0

9.1

28.0

46.2

Note:
1. Typical describes additional product performance information that is not covered by the product warranty.

600
0.8V

500

0.7V

Ids (mA)

400
300

0.6V

200
0.5V

100

0.4V

Vds (V)

Figure 6. Typical IV Curve.

44

45

45

40

40

40

35

35

35

25

3V
4V
4.5V

20
15
100

150

200

250

300

350

30
25

3V
4V
4.5V

20
15
100

400

150

200

15
100

400

18

18

13

17

17

12

16
15
14

300

350

13
12
100

400

150

200

Gain_3V
Pout_3V
PAE_3V

70

30

60

25

40
15
30
10

20

5
0
-10

-6

-2

10

14

PAE (%)

50

20

GAIN (dB) & Pout (dBm)

30

300

350

7
100

400

3V
4V
4.5V
150

200

Pin (dBm)

Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.

30

60

25

50

30
10

0
-10

Figure 13. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 3V and Frequency = 900 MHz.

Gain_4V
Pout_4V
PAE_4V

70

40

20

-6

-2

250

300

350

400

Figure 12. Small Signal Gain vs. Ids and


Vds at 3.9 GHz.

15

10

400

Ids (mA)

20

350

10

Figure 11. Small Signal Gain vs. Ids and


Vds at 2 GHz.

Figure 10. Small Signal Gain vs. Ids and


Vds at 900 MHz.

300

11

Ids (mA)

Ids (mA)

25

250

250

3V
4V
4.5V

10

14

GAIN (dB) & Pout (dBm)

250

15

PAE (%)

200

16

14

3V
4V
4.5V

13

GAIN (dB)

14

150

200

Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz.

19

12
100

150

Ids (mA)

19

GAIN (dB)

GAIN (dB)

350

3V
4V
4.5V

20

Figure 8. OIP3 vs. Ids and Vds at 2 GHz.

Figure 7. OIP3 vs. Ids and Vds at 900 MHz.

GAIN (dB) & Pout (dBm)

300

25

Ids (mA)

Ids (mA)

55

250

30

60
50
40

15
30
10

10
0

0
-10

Pin (dBm)

Gain_4.5V
Pout_4.5V
PAE_4.5V

20

Figure 14. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4V and Frequency = 900 MHz.

70

20
10
-6

-2

10

14

Pin (dBm)

Figure 15. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4.5V and Frequency = 900 MHz.

PAE (%)

30

OIP3 (dBm)

45

OIP3 (dBm)

OIP3 (dBm)

ATF-52189 Typical Performance Curves (at 25C unless specified otherwise)


Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA.

ATF-52189 Typical Performance Curves (at 25C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA.

30

10

20
5

10

14

18

40

15

30

10

20

0
-10

-6

-2

30
Gain_3V
Pout_3V
PAE_3V

40
30

10

20
5

10
6

10

14

18

Pin (dBm)

Figure 19. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 3V and Frequency = 3.9 GHz.

Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.

66

GAIN (dB) & Pout (dBm)

60

18

50
40

15

30

10

20

0
-10

10
-6

-2

30

50

25

18

50

20

10

10

0
-10

14

Gain_4.5V
Pout_4.5V
PAE_4.5V

10

20

10

60

30

10

18

15

30

14

40

15

-2

10

20

40

-6

Figure 18. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4.5V and Frequency = 2 GHz.

60

20

0
-10

Pin (dBm)

Gain_4V
Pout_4V
PAE_4V

25

PAE (%)

GAIN (dB) & Pout (dBm)

70

15

-2

14

30

50

-6

10

Figure 17. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4V and Frequency = 2 GHz.

80

20

0
-10

60

20

Pin (dBm)

Pin (dBm)

Figure 16. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 3V and Frequency = 2 GHz.

25

70

10

GAIN (dB) & Pout (dBm)

-2

50

10
-6

60

20

Gain_4.5V
Pout_4.5V
PAE_4.5V

25

Pin (dBm)

Figure 20. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4V and Frequency = 3.9 GHz.

PAE (%)

0
-10

70

PAE (%)

40

15

PAE (%)

50

GAIN (dB) & Pout (dBm)

60

20

Gain_4V
Pout_4V
PAE_4V

25

80

-6

-2

10

14

18

Pin (dBm)

Figure 21. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4.5V and Frequency = 3.9 GHz.

PAE (%)

70

30

80

PAE (%)

Gain_3V
Pout_3V
PAE_3V

25
GAIN (dB) & Pout (dBm)

30

80

GAIN (dB) & Pout (dBm)

30

46

18

44

16

42

14

GAIN (dB)

OIP3 (dBm)

ATF-52189 Typical Performance Curves, continued


Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA, Over Temperature and Frequency

40
38

10
-40C
25C
80C

36
34
0.5

12

1.5

-40C
25C
80C

2.5

3.5

6
0.5

FREQUENCY (GHz)

60

27.5

55

27

50

PAE (%)

28

P1dB (dBm)

2.5

3.5

Figure 23. Gain vs. Temperature and


Frequency at optimum OIP3.

26.5
26

45
40

-40C
25C
80C

25.5

1.5

-40C
25C
80C

35

2.5

3.5

FREQUENCY (GHz)

Figure 24. P1dB vs. Temperature and


Frequency at optimum OIP3.

Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.

77

FREQUENCY (GHz)

Figure 22. OIP3 vs. Temperature and


Frequency at optimum OIP3.

25
0.5

1.5

30
0.5

1.5

2.5

3.5

FREQUENCY (GHz)

Figure 25. PAE vs. Temperature and


Frequency at optimum OIP3.

45

45

40

40

40

35

35

35

25

3V
4V
4.5V

20
15
100

150

200

250

300

350

30
25
3V
4V
4.5V

20
15
100

400

150

200

15
100

400

17

15

15

15

13

13

13

GAIN (dB)

17

11
9

11
3V
4V
4.5V

250

300

350

7
5
100

400

150

200

35
Gain_3V
Pout_3V
PAE_3V

50

10

0
-10

5
10

14

Pin (dBm)

Figure 32. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 3V and Frequency = 900 MHz.

Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.

-6

-2

250

300

350

400

35

10

14

70
Gain_4.5V
Pout_4.5V
PAE_4.5V

30

50

20

20

25

10

10

200

Figure 31. Small Signal Gain vs. Ids and Vds


at 3.9 GHz.

60

30

30

-2

Gain_4V
Pout_4V
PAE_4V

15

15

-6

150

Ids (mA)

40

40

400

11

5
100

400

20

20

0
-10

350

70

30

60

PAE (%)

25

300

35

GAIN (dB) & Pout (dBm)

30

250

Figure 30. Small Signal Gain vs. Ids and Vds


at 2 GHz.

70

350

3V
4V
4.5V

Ids (mA)

Ids (mA)

Figure 29. Small Signal Gain vs. Ids and Vds


at 900 MHz.

300

GAIN (dB) & Pout (dBm)

200

250

9
3V
4V
4.5V

25

60
50

20

40

15

30

10

20

10

10

0
-10

Pin (dBm)

Figure 33. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4V and Frequency = 900 MHz.

PAE (%)

150

200

Figure 28. OIP3 vs Ids and Vds at 3.9 GHz.

17

7
100

150

Ids (mA)

19

GAIN (dB)

GAIN (dB)

350

3V
4V
4.5V

20

Figure 27. OIP3 vs. Ids and Vds at 2 GHz.

Figure 26. OIP3 vs Ids and Vds at 900 MHz.

GAIN (dB) & Pout (dBm)

300

25

Ids (mA)

Ids (mA)

88

250

30

-6

-2

10

14

Pin (dBm)

Figure 34. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4.5V and Frequency = 900 MHz.

PAE (%)

30

OIP3 (dBm)

45

OIP3 (dBm)

OIP3 (dBm)

ATF-52189 Typical Performance Curves, (at 25C unless specified otherwise)


Tuned for Optimal P1dB at Vd = 4.5V, Ids = 200 mA.

ATF-52189 Typical Performance Curves (at 25C unless specified otherwise), continued
Tuned for Optimal P1dB at Vd = 4.5V, Ids = 200 mA.

20
30
15
20

10

10

5
-2

10

14

18

40

20
30
15
20

10
5

0
-10

-6

-2

Pin (dBm)

Gain_3V
Pout_3V
PAE_3V

35

60

30

50
40

15

30

10

20

5
-8

-4

18

40
30

15
20

10

10

0
-10

-6

-2

12

16

20

24

Gain_4V
Pout_4V
PAE_4V

25

35

60

30

50

30

10

20

10

Pin (dBm)

Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.

-4

12

10

14

18

Figure 37. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4.5V and Frequency = 2 GHz.

70

15

-8

Pin (dBm)

40

Figure 38. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 3V and Frequency = 3.9 GHz.

99

14

20

PAE (%)

GAIN (dB) & Pout (dBm)

70

20

10

50

20

Figure 36. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4V and Frequency = 2 GHz.

GAIN (dB) & Pout (dBm)

35

25

25

Pin (dBm)

Figure 35. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 3V and Frequency = 2 GHz.

30

Gain_4.5V
Pout_4.5V
PAE_4.5V

10

16

20

24

GAIN (dB) & Pout (dBm)

-6

30

70
Gain_4.5V
Pout_4.5V
PAE_4.5V

25

60
50

20

40

15

30

10

20

10

10

Pin (dBm)

Figure 39. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4V and Frequency = 3.9 GHz.

PAE (%)

0
-10

25

50

60

PAE (%)

40

Gain_4V
Pout_4V
PAE_4V

35

-8

-4

12

16

20

24

Pin (dBm)

Figure 40. Small Signal Gain/Pout/PAE vs.


Pin at Vds = 4.5V and Frequency = 3.9 GHz.

PAE (%)

30

60

GAIN (dB) & Pout (dBm)

50

PAE (%)

GAIN (dB) & Pout (dBm)

25

35

PAE (%)

Gain_3V
Pout_3V
PAE_3V

30

60

GAIN (dB) & Pout (dBm)

35

40

18

38

16

36

14

GAIN (dB)

OIP3 (dBm)

ATF-52189 Typical Performance Curves, continued


Tuned for Optimal P1dB at Vd = 4.5V, Ids = 200 mA, Over Temperature and Frequency.

34
32

10
-40C
25C
80C

30
28
0.5

12

1.5

-40C
25C
80C

2.5

3.5

6
0.5

FREQUENCY (GHz)

29.5

55

29

50

PAE (%)

60

P1dB (dBm)

2.5

3.5

Figure 42. Gain vs. Temperature and


Frequency at optimum P1dB.

30

28.5

45
40

28
-40C
25C
80C

27.5

1.5

-40C
25C
80C

35

2.5

3.5

FREQUENCY (GHz)

Figure 43. P1dB vs. Temperature and


Frequency at optimum P1dB.

Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.

10
10

FREQUENCY (GHz)

Figure 41. OIP3 vs. Temperature and


Frequency at optimum P1dB.

27
0.5

1.5

30
0.5

1.5

2.5

3.5

FREQUENCY (GHz)

Figure 44. PAE vs. Temperature and


Frequency at optimum P1dB.

ATF-52189 Typical Performance Curves (at 25C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA.
17

45

16

40
35

OIP3 (dBm)

14
13
12
3.0V
4.0V
4.5V

11
10
100

150

200

250

300

350

30
25
3.0V
4.0V
4.5V

20
15
100

400

150

200

250

30

10

20

-2

10

14

18

40

15

30

10

20

10

10

0
-10

Pin (dBm)

30

15

30

10

20

10

-2

10

14

18

Pin (dBm)

Figure 49. Small Signal Gain/Pout/PAE vs.


Pin at Vds 4.5V and Freq = 2.4 GHz.

Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.

11
11

PAE (%)

GAIN (dB) & Pout (dBm)

50
40

-6

-2

10

14

18

Figure 48. Small Signal Gain/Pout/PAE vs.


Pin at Vds 4V and Freq = 2.4 GHz.

60
Gain_4.5V
Pout_4.5V
PAE_4.5V

20

0
-10

-6

Pin (dBm)

Figure 47. Small Signal Gain/Pout/PAE vs.


Pin at Vds 3V and Freq = 2.4 GHz.

25

50

20

PAE (%)

30

GAIN (dB) & Pout (dBm)

GAIN (dB) & Pout (dBm)

15

60
Gain_4V
Pout_4V
PAE_4V

25

50
40

-6

400

30

60
Gain_3V
Pout_3V
PAE_3V

20

0
-10

350

Figure 46. Small Signal Gain vs. Ids and Vds


at 2.4 GHz.

Figure 45. OIP3 vs. Ids and Vds at 2.4 GHz.

25

300

Ids (mA)

Ids (mA)

PAE (%)

GAIN (dB)

15

ATF-52189 Typical Scattering and Noise Parameters at 25C, VDS = 4.5V, IDS = 280 mA

Freq
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0

Mag.
0.544
0.704
0.777
0.813
0.856
0.866
0.872
0.874
0.876
0.880
0.881
0.882
0.879
0.874
0.882
0.889
0.903
0.918
0.948
0.960
0.941
0.946
0.937
0.914
0.951
0.948
0.939
0.948
0.947
0.903

S11
Ang.
-91.7
-128.0
-146.6
-158.4
-171.5
-176.8
178.8
175.1
171.6
168.4
154.5
141.6
128.6
115.1
105.8
96.5
77.9
59.3
43.4
31.6
23.4
14.0
3.1
-3.8
-15.1
-19.8
-21.2
-24.7
-33.0
-45.1

Fmin
dB
1.45
1.60
1.90
2.20
2.46
2.79
3.09
3.39
3.69

(dB)
31.93
29.23
26.78
24.74
21.75
20.26
19.00
17.92
16.96
16.08
12.74
10.39
8.63
7.31
6.39
5.36
2.83
-0.75
-3.31
-5.68
-8.20
-10.29
-12.11
-13.68
-15.70
-17.79
-18.56
-18.94
-17.99
-17.14

G amma Opt
Mag
Ang
0.704
-175.0
0.706
-162.6
0.727
-137.5
0.763
-112.8
0.804
-91.9
0.855
-68.9
0.896
-51.5
0.923
-38.6
0.930
-31.0

S21
Mag.
39.502
28.943
21.823
17.257
12.238
10.303
8.913
7.866
7.050
6.366
4.333
3.309
2.702
2.320
2.087
1.853
1.385
0.918
0.683
0.520
0.389
0.306
0.248
0.207
0.164
0.129
0.118
0.113
0.126
0.139

Rn/50
0.23
0.15
0.10
0.14
0.27
0.61
0.81
1.02
1.42

Ang.
144.2
122.7
109.6
100.6
93.9
89.3
85.4
81.8
78.4
75.3
61.0
47.5
34.1
20.5
9.7
-1.2
-22.8
-44.5
-63.8
-81.4
-96.9
-112.0
-128.9
-143.7
-163.9
-172.6
179.7
171.7
157.7
140.5

(dB)
-39.17
-35.39
-33.98
-33.15
-33.98
-33.56
-33.56
-33.15
-32.77
-32.40
-31.06
-29.63
-28.18
-27.26
-26.92
-26.60
-25.98
-25.41
-26.02
-26.74
-28.18
-29.63
-32.77
-37.72
-37.08
-37.72
-41.94
-46.02
-38.42
-33.98

S12
Mag.
0.011
0.017
0.020
0.022
0.020
0.021
0.021
0.022
0.023
0.024
0.028
0.033
0.039
0.043
0.045
0.047
0.050
0.054
0.050
0.046
0.039
0.033
0.023
0.013
0.014
0.013
0.008
0.005
0.012
0.020

Ga
dB
21.63
18.91
16.10
12.97
11.03
9.62
8.46
7.62
6.50

Ang.
52.6
40.4
33.2
28.6
26.1
25.4
25.1
25.0
25.0
25.0
24.2
21.5
16.7
9.6
3.3
-3.1
-15.7
-28.4
-39.9
-51.6
-63.8
-80.6
-113.1
-154.6
106.3
51.0
60.4
71.8
123.0
114.5

S22
Ang.
-99.7
-130.4
-145.8
-155.3
-170.8
-174.5
-177.5
179.8
177.4
175.2
165.5
156.5
147.4
138.9
130.4
121.8
104.8
87.7
74.6
61.0
47.8
36.5
26.9
16.9
7.7
1.1
-4.4
-8.4
-13.3
-21.3

Mag.
0.289
0.397
0.446
0.470
0.551
0.559
0.562
0.564
0.564
0.563
0.558
0.549
0.542
0.543
0.560
0.578
0.613
0.648
0.687
0.729
0.773
0.805
0.825
0.843
0.842
0.849
0.879
0.876
0.884
0.859

MSG/MAG
dB
35.55
32.31
30.38
28.95
27.87
26.91
26.28
25.53
24.86
24.24
21.90
18.26
16.05
14.47
13.83
13.09
11.24
8.51
8.14
7.41
4.33
3.52
2.11
-0.19
0.27
-2.38
-2.87
-2.64
-1.07
-3.66

40
MSG

30

MSG/MAG & |S21|2 (dB)

Freq
(GHz)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0

20
MAG

10
0

S21

-10
-20

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have
been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at
16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina
carrier. The input reference plane is at the end of the gate lead. The output reference plane is at
the end of the drain lead.

12
12

-30

10

12

14

16 18

FREQUENCY (GHz)

Figure 50. MSG/MAG & |S21|2 vs. Frequency


at 4.5V/280 mA.

ATF-52189 Typical Scattering and Noise Parameters at 25C, VDS = 4.5V, IDS = 200 mA

Freq
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0

S11
Mag.
0.848
0.856
0.863
0.868
0.882
0.885
0.886
0.886
0.885
0.887
0.886
0.886
0.881
0.879
0.885
0.891
0.903
0.915
0.948
0.960
0.941
0.945
0.938
0.914
0.953
0.946
0.939
0.948
0.947
0.900

Fmin
dB
0.92
1.02
1.21
1.41
1.59
1.81
2.01
2.21
2.41

Ang.
-84.4
-124.7
-144.9
-157.3
-170.8
-176.3
179.2
175.4
171.9
168.6
154.7
141.7
128.7
116.3
106.8
97.4
78.4
59.5
43.4
31.6
23.4
14.0
3.0
-3.7
-15.1
-19.8
-21.2
-24.7
-33.1
-45.1

(dB)
33.58
30.01
27.16
24.94
21.81
20.27
18.98
17.88
16.91
16.01
12.65
10.29
8.52
7.28
6.33
5.27
2.66
-1.10
-3.44
-5.78
-8.34
-10.40
-12.32
-13.89
-15.86
-17.92
-18.64
-19.17
-18.13
-17.27

G amma Opt
Mag
Ang
0.409
177.1
0.480
-169.1
0.602
-141.8
0.700
-115.6
0.772
-93.6
0.841
-69.9
0.891
-52.2
0.931
-39.1
0.965
-31.5

S21
Mag.
47.752
31.649
22.811
17.656
12.320
10.315
8.894
7.831
7.007
6.320
4.291
3.271
2.668
2.312
2.073
1.835
1.358
0.881
0.673
0.514
0.383
0.302
0.242
0.202
0.161
0.127
0.117
0.110
0.124
0.137

Rn/50
0.15
0.10
0.08
0.12
0.23
0.54
0.70
0.98
1.33

Ang.
136.0
114.6
102.9
95.1
89.4
85.5
82.0
78.8
75.8
72.9
59.3
46.3
33.1
20.4
9.5
-1.4
-23.2
-45.0
-64.1
-81.8
-97.0
-112.0
-129.2
-144.1
-164.5
-172.6
178.8
170.6
157.2
140.4

(dB)
-37.08
-34.42
-33.15
-32.77
-33.56
-33.56
-33.15
-32.77
-32.40
-32.40
-30.75
-29.37
-28.18
-27.38
-27.01
-26.65
-25.98
-25.35
-26.02
-26.74
-28.18
-29.63
-33.15
-38.42
-37.72
-39.17
-43.10
-44.44
-38.42
-33.98

S12
Mag.
0.014
0.019
0.022
0.023
0.021
0.021
0.022
0.023
0.024
0.024
0.029
0.034
0.039
0.043
0.045
0.047
0.050
0.054
0.050
0.046
0.039
0.033
0.022
0.012
0.013
0.011
0.007
0.006
0.012
0.020

Ga
dB
19.38
17.52
15.64
12.74
11.05
9.72
8.62
7.78
6.72

Ang.
51.6
35.9
28.7
24.7
22.5
22.2
22.1
22.1
22.3
22.4
22.1
19.7
15.0
8.7
2.5
-3.8
-16.3
-28.8
-40.5
-52.4
-64.2
-80.8
-113.9
-156.0
98.9
49.2
72.1
76.0
119.6
115.7

MSG/MAG
dB
35.33
32.22
30.16
28.85
27.68
26.91
26.07
25.32
24.65
24.21
21.70
18.69
16.11
14.68
13.97
13.15
11.08
8.05
8.04
7.37
4.20
3.35
1.99
-0.42
0.22
-2.67
-2.97
-2.92
-1.28
-3.92

S22
Ang.
-104.6
-136.7
-151.3
-159.9
-173.9
-177.2
-179.8
177.7
175.6
173.6
164.3
155.6
146.6
138.1
129.6
121.0
104.0
86.9
74.4
60.9
47.7
36.5
26.8
16.9
7.7
1.0
-4.5
-8.4
-13.2
-21.3

Mag.
0.360
0.442
0.473
0.487
0.562
0.567
0.568
0.568
0.567
0.566
0.560
0.549
0.543
0.548
0.564
0.580
0.613
0.645
0.686
0.729
0.772
0.805
0.826
0.843
0.843
0.849
0.877
0.874
0.883
0.859

40
MSG

30

MSG/MAG & |S21|2 (dB)

Freq
(GHz)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0

20
MAG

10
0

S21

-10
-20

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have
been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at
16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina
carrier. The input reference plane is at the end of the gate lead. The output reference plane is at
the end of the drain lead.

13
13

-30

10

12

14

16 18

FREQUENCY (GHz)

Figure 51. MSG/MAG & |S21|2 vs. Frequency


at 4.5V/200 mA.

ATF-52189 Typical Scattering and Noise Parameters at 25C, VDS = 4.5V, IDS = 120 mA

Freq
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0

Mag.
0.926
0.891
0.882
0.879
0.885
0.886
0.886
0.886
0.885
0.887
0.884
0.884
0.880
0.875
0.882
0.889
0.903
0.917
0.947
0.959
0.941
0.946
0.936
0.914
0.951
0.948
0.937
0.949
0.947
0.906

Fmin
dB
0.67
0.76
0.95
1.13
1.30
1.50
1.68
1.86
1.88

S11
Ang.
-80.9
-121.5
-142.5
-155.4
-169.7
-175.4
-180.0
176.1
172.5
169.3
155.1
142.1
129.1
115.5
106.2
96.8
78.1
59.4
43.5
31.7
23.4
14.1
3.1
-3.7
-14.9
-19.8
-21.1
-24.5
-32.9
-45.1

(dB)
33.47
29.88
27.03
24.79
21.67
20.13
18.83
17.72
16.76
15.86
12.49
10.13
8.36
7.03
6.10
5.06
2.52
-1.09
-3.64
-6.00
-8.64
-10.69
-12.54
-14.24
-16.25
-18.34
-19.02
-19.66
-18.56
-17.79

G amma Opt
Mag
Ang
0.263
166.7
0.361
-177.3
0.524
-146.8
0.652
-118.4
0.741
-95.3
0.826
-70.9
0.887
-52.9
0.939
-39.7
0.989
-31.8

S21
Mag.
47.170
31.192
22.457
17.360
12.120
10.145
8.743
7.695
6.883
6.209
4.212
3.210
2.618
2.246
2.018
1.791
1.337
0.882
0.658
0.501
0.370
0.292
0.236
0.194
0.154
0.121
0.112
0.104
0.118
0.129

Rn/50
0.14
0.08
0.06
0.12
0.15
0.30
0.54
0.69
0.97

Ang.
135.8
114.3
102.7
94.8
88.9
85.0
81.6
78.4
75.3
72.4
58.8
45.7
32.5
18.9
8.1
-2.8
-24.5
-46.2
-65.5
-83.3
-98.9
-114.3
-131.4
-146.0
-166.9
-175.3
176.1
167.9
154.7
138.1

(dB)
-35.92
-33.15
-32.04
-31.70
-32.77
-32.40
-32.40
-32.04
-31.70
-31.70
-30.46
-29.12
-27.96
-27.08
-26.80
-26.54
-26.04
-25.56
-26.20
-26.74
-28.40
-29.63
-33.15
-37.72
-37.72
-39.17
-40.92
-43.10
-37.72
-33.56

S12
Mag.
0.016
0.022
0.025
0.026
0.023
0.024
0.024
0.025
0.026
0.026
0.030
0.035
0.040
0.044
0.046
0.047
0.050
0.053
0.049
0.046
0.038
0.033
0.022
0.013
0.013
0.011
0.009
0.007
0.013
0.021

Ga
dB
19.36
17.64
15.04
12.27
10.83
9.62
8.48
7.85
4.25

Ang.
51.6
34.6
26.7
22.2
19.7
19.0
18.6
18.5
18.4
18.3
17.8
15.6
11.2
4.9
-1.1
-7.1
-19.0
-31.0
-42.2
-53.9
-65.8
-82.9
-116.4
-159.1
104.3
56.9
79.5
74.4
117.9
111.8

S22
Ang.
-96.0
-131.4
-147.6
-157.0
-172.5
-176.0
-178.8
178.7
176.5
174.4
165.1
156.3
147.4
139.0
130.5
122.0
105.1
88.1
75.1
61.6
48.2
36.9
27.2
17.2
8.0
1.2
-4.2
-8.2
-13.1
-21.1

Mag.
0.389
0.447
0.471
0.482
0.551
0.555
0.557
0.557
0.555
0.554
0.548
0.538
0.532
0.532
0.549
0.567
0.603
0.638
0.681
0.725
0.770
0.805
0.826
0.843
0.843
0.850
0.877
0.878
0.887
0.862

MSG/MAG
dB
34.70
31.52
29.53
28.25
27.22
26.26
25.61
24.88
24.23
23.78
21.47
19.17
16.16
14.43
13.76
12.99
11.06
8.23
7.89
7.19
4.00
3.26
1.71
-0.74
-0.35
-2.88
-3.46
-3.21
-1.56
-4.11

40
MSG

30

MSG/MAG & |S21|2 (dB)

Freq
(GHz)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0

20
MAG

10
0

S21

-10
-20

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have
been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at
16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina
carrier. The input reference plane is at the end of the gate lead. The output reference plane is at
the end of the drain lead.

14
14

-30

10

12

14

16 18

FREQUENCY (GHz)

Figure 52. MSG/MAG & |S21|2 vs. Frequency


at 4.5V/120 mA.

ATF-52189 Typical Scattering and Noise Parameters at 25C, VDS = 4.0V, IDS = 200 mA

Freq
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0

S11
Mag.
0.866
0.865
0.868
0.870
0.884
0.886
0.887
0.887
0.886
0.888
0.886
0.885
0.881
0.868
0.876
0.884
0.901
0.917
0.947
0.960
0.941
0.947
0.938
0.914
0.954
0.948
0.937
0.949
0.947
0.902

Fmin
dB
0.61
0.75
1.03
1.30
1.56
1.86
2.14
2.42
2.70

Ang.
-84.2
-124.5
-144.8
-157.3
-170.8
-176.3
179.2
175.4
171.9
168.7
154.7
141.7
128.7
113.6
104.5
95.5
77.3
59.2
43.4
31.6
23.4
14.1
3.0
-3.7
-15.0
-19.9
-21.1
-24.6
-33.0
-45.1

(dB)
33.69
30.08
27.22
24.98
21.85
20.30
19.01
17.91
16.94
16.05
12.68
10.33
8.57
7.16
6.24
5.21
2.70
-0.84
-3.38
-5.73
-8.27
-10.34
-12.18
-13.85
-15.76
-17.79
-18.49
-18.86
-17.86
-17.20

G amma Opt
Mag
Ang
0.434
175.5
0.490
-170.4
0.595
-142.6
0.689
-116.0
0.763
-93.9
0.837
-70.1
0.887
-52.4
0.918
-39.2
0.929
-31.4

S21
Mag.
48.364
31.913
22.964
17.748
12.369
10.356
8.926
7.862
7.033
6.344
4.307
3.284
2.681
2.280
2.051
1.823
1.365
0.908
0.678
0.517
0.386
0.304
0.246
0.203
0.163
0.129
0.119
0.114
0.128
0.138

Rn/50
0.14
0.09
0.08
0.11
0.19
0.55
0.70
0.95
1.34

Ang.
135.7
114.3
102.7
94.9
89.3
85.4
82.0
78.8
75.8
72.9
59.5
46.5
33.3
18.8
8.3
-2.2
-23.3
-44.3
-63.3
-80.8
-96.1
-111.3
-128.0
-142.4
-162.4
-171.0
-178.9
173.5
158.9
141.5

(dB)
-37.08
-33.98
-33.15
-32.77
-33.56
-33.56
-33.15
-32.77
-32.40
-32.40
-30.75
-29.37
-28.18
-26.94
-26.66
-26.39
-25.88
-25.40
-26.02
-26.74
-28.18
-29.90
-33.15
-38.42
-37.72
-39.17
-43.10
-44.44
-38.42
-33.98

S12
Mag.
0.014
0.020
0.022
0.023
0.021
0.021
0.022
0.023
0.024
0.024
0.029
0.034
0.039
0.045
0.046
0.048
0.051
0.054
0.050
0.046
0.039
0.032
0.022
0.012
0.013
0.011
0.007
0.006
0.012
0.020

Ga
dB
19.42
17.66
15.68
12.74
11.11
9.71
8.56
7.89
6.79

Ang.
51.3
35.7
28.6
24.5
22.6
22.3
22.1
22.3
22.4
22.6
22.3
19.7
15.0
7.5
1.3
-4.9
-17.3
-29.7
-40.8
-52.8
-64.6
-80.9
-114.7
-156.1
100.7
49.4
72.7
78.5
119.1
116.4

S22
Ang.
-106.5
-138.0
-152.3
-160.7
-174.3
-177.5
179.8
177.4
175.2
173.2
164.0
155.1
146.1
137.6
129.1
120.6
103.7
86.7
73.8
60.3
47.2
36.1
26.5
16.7
7.4
0.8
-4.6
-8.6
-13.3
-21.4

Mag.
0.366
0.451
0.483
0.498
0.572
0.577
0.579
0.579
0.578
0.577
0.570
0.560
0.554
0.549
0.566
0.584
0.618
0.653
0.691
0.732
0.774
0.807
0.826
0.844
0.843
0.849
0.876
0.873
0.881
0.856

MSG/MAG
dB
35.38
32.03
30.19
28.87
27.70
26.93
26.08
25.34
24.67
24.22
21.72
18.68
16.18
14.17
13.55
12.84
11.06
8.44
8.02
7.39
4.27
3.57
2.13
-0.36
0.47
-2.37
-2.98
-2.54
-1.06
-3.85

40
MSG

30

MSG/MAG & |S21|2 (dB)

Freq
(GHz)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0

20
MAG

10
0

S21

-10
-20

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have
been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at
16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina
carrier. The input reference plane is at the end of the gate lead. The output reference plane is at
the end of the drain lead.

15
15

-30

10

12

14

16 18

FREQUENCY (GHz)

Figure 53. MSG/MAG & |S21|2 vs. Frequency


at 4.0V/200 mA.

ATF-52189 Typical Scattering and Noise Parameters at 25C, VDS = 3.0V, IDS = 200 mA

Freq
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0

Mag.
0.880
0.882
0.885
0.886
0.893
0.894
0.893
0.892
0.891
0.893
0.889
0.887
0.882
0.869
0.877
0.885
0.901
0.916
0.947
0.960
0.941
0.945
0.937
0.914
0.953
0.947
0.939
0.949
0.948
0.902

Fmin
dB
0.75
0.84
1.00
1.17
1.32
1.50
1.67
1.83
2.00

S11
Ang.
-81.4
-121.9
-143.0
-156.1
-170.1
-175.8
179.6
175.6
172.1
168.8
154.6
141.6
128.6
113.5
104.4
95.4
77.2
59.1
43.2
31.5
23.2
13.9
2.9
-4.0
-15.3
-20.2
-21.6
-25.0
-33.4
-45.7

(dB)
33.44
29.97
27.17
24.96
21.77
20.22
18.93
17.83
16.86
15.96
12.60
10.26
8.50
7.10
6.18
5.16
2.66
-0.87
-3.36
-5.68
-8.18
-10.20
-12.04
-13.60
-15.55
-17.46
-18.20
-18.49
-17.39
-16.71

G amma Opt
Mag
Ang
0.341
174.7
0.427
-171.1
0.573
-143.2
0.688
-116.6
0.769
-94.3
0.847
-70.4
0.903
-52.6
0.951
-39.3
0.996
-31.6

S21
Mag.
46.976
31.521
22.842
17.691
12.257
10.259
8.842
7.786
6.967
6.281
4.265
3.258
2.660
2.264
2.037
1.811
1.358
0.904
0.679
0.520
0.390
0.309
0.250
0.209
0.167
0.134
0.123
0.119
0.135
0.146

Rn/50
0.11
0.08
0.06
0.11
0.20
0.45
0.66
0.85
1.10

Ang.
136.0
115.1
103.3
95.3
89.6
85.7
82.3
79.1
76.1
73.3
60.0
47.2
34.2
19.8
9.5
-0.9
-21.6
-42.2
-60.8
-77.8
-92.9
-107.4
-124.1
-137.8
-157.2
-165.2
-173.2
178.6
164.0
147.2

(dB)
-35.92
-33.15
-32.40
-32.04
-33.15
-32.77
-32.77
-32.40
-32.40
-32.04
-30.75
-29.37
-27.96
-26.74
-26.50
-26.27
-25.82
-25.39
-26.02
-26.74
-28.18
-29.90
-33.15
-38.42
-37.72
-39.17
-43.10
-44.44
-37.72
-33.98

S12
Mag.
0.016
0.022
0.024
0.025
0.022
0.023
0.023
0.024
0.024
0.025
0.029
0.034
0.040
0.046
0.047
0.049
0.051
0.054
0.050
0.046
0.039
0.032
0.022
0.012
0.013
0.011
0.007
0.006
0.013
0.020

Ga
dB
21.18
19.42
17.13
14.59
10.99
9.83
8.48
7.61
4.30

Ang.
53.2
35.2
26.7
22.1
20.0
19.6
19.7
19.9
20.2
20.5
21.2
19.3
14.6
6.9
0.6
-5.7
-18.4
-31.0
-42.3
-54.2
-66.1
-82.6
-116.2
-158.8
100.1
50.2
73.3
81.7
121.3
117.2

MSG/MAG
dB
34.68
31.56
29.79
28.50
27.46
26.49
25.85
25.11
24.63
24.00
21.68
18.87
16.25
14.22
13.59
12.87
11.07
8.45
8.06
7.42
4.41
3.57
2.23
-0.08
0.64
-2.10
-2.59
-2.23
-0.58
-3.52

S22
Ang.
-106.9
-138.1
-152.9
-161.6
-174.8
-178.2
179.1
176.6
174.4
172.3
162.8
153.7
144.5
135.8
127.3
118.8
101.7
84.7
71.9
58.6
45.7
34.8
25.3
15.6
6.5
-0.1
-5.3
-9.2
-14.1
-22.1

Mag.
0.374
0.488
0.529
0.545
0.614
0.618
0.619
0.618
0.617
0.616
0.608
0.597
0.591
0.585
0.600
0.616
0.647
0.678
0.711
0.747
0.785
0.813
0.830
0.845
0.843
0.848
0.874
0.870
0.876
0.849

40
MSG

30

MSG/MAG & |S21|2 (dB)

Freq
(GHz)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0

20
MAG

10
0

S21

-10
-20

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have
been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at
16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina
carrier. The input reference plane is at the end of the gate lead. The output reference plane is at
the end of the drain lead.

16
16

-30

10

12

14

16 18

FREQUENCY (GHz)

Figure 54. MSG/MAG & |S21|2 vs. Frequency


at 3.0V/200 mA.

Device Models, PCB Layout and Stencil Device


Refer to Avagos Web Site: www.avagotech.com/view/rf

Part Number Ordering Information


Part Number

No of devices

Container

ATF-52189-BLKG

100

7 Tape/Reel

ATF-52189-TR1G

3000

13 Tape/Reel

SOT89 Package Dimensions


D

D
D1

D1

POLISH

E1

OR

E1
E

L
e

e
S

e1

e1

1.625

D2

MATTE FINISH

HALF ETCHING
DEPTH 0.100

1.23

2.35

0.77

0.2

D1

b1

POLISH

1.24

OR

b1

Dimensions in mm
Symbols

17

Minimum

Nominal

Dimensions in inches
Maximum

Minimum

Nominal

Maximum

1.40

1.50

1.60

0.055

0.059

0.063

0.89

1.04

1.20

0.0350

0.041

0.047

0.36

0.42

0.48

0.014

0.016

0.018

b1

0.41

0.47

0.53

0.016

0.018

0.030
0.017

0.38

0.40

0.43

0.014

0.015

4.40

4.50

4.60

0.173

0.177

0.181

D1

1.40

1.60

1.75

0.055

0.062

0.069

D2

1.45

1.65

1.80

0.055

0.062

0.069

3.94

4.25

0.155

0.167

E1

2.40

2.50

2.60

0.094

0.098

0.102

e1

2.90

3.00

3.10

0.114

0.118

0.122

0.65

0.75

0.85

0.026

0.030

0.034

1.40

1.50

1.60

0.054

0.059

0.063

Device Orientation

USER FEED
DIRECTION

2GX

2GX

2GX

CARRIER
TAPE

2GX

REEL

COVER TAPE

Tape Dimensions
1.5 +0.1/-0.0

8.00

0.30 .05

1.50 MIN.

2.00 .05 SEE NOTE 3


4.00 SEE NOTE 1

R 0.3 MAX.

1.75 .10

5.50 .05
SEE NOTE 3
Bo
12.0 .3
Ko

SECTION A - A

18

Ao
Ao = 4.60
Bo = 4.90
Ko = 1.90

R 0.3 TYP.

DIMENSIONS IN MM
NOTES:
1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE 0.2
2. CAMBER IN COMPLIANCE WITH EIA 481
3. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED
AS TRUE POSITION OF POCKET, NOT POCKET HOLE

Reel Dimensions 13 Reel


R

LOKREEL

MINNEAPOLIS USA
U.S PAT 4726534

102.0
REF

1.5

ATTENTION
Electrostatic Sensitive Devices
Safe Handling Required

88 REF

330.0
REF
"A"
96.5

6
PS

Detail "B"

6
PS

Detail "A"

8.4 - 0.2

(MEASURED AT HUB)

11.1 MAX.

20.2

Dimensions in mm

M IN
+0.5

13.0 -0.2

2.0 0.5

For product information and a complete list of distributors, please go to our web site:

+0.3

(MEASURED AT HUB)

www.avagotech.com

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright 2005-2013 Avago Technologies. All rights reserved.
AV02-0050EN - November 11, 2013

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