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2SC5886A

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5886A
High-Speed Switching Applications
DC/DC Converter Applications

Unit: mm

High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)

Low collector-emitter saturation: VCE (sat) = 0.22 V (max)

High-speed switching: tf = 95 ns (typ.)

Maximum Ratings (Ta = 25C)


Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Rating

Unit

VCBO

120

VCEX

100

VCEO

50

VEBO

DC

IC

Pulse

ICP

10

IB

0.5

Base current
Ta = 25C

Collector power
dissipation

Symbol

Tc = 25C

Junction temperature
Storage temperature range

V
V
A
A

Pc

20

JEDEC

JEITA

Tj

150

TOSHIBA

Tstg

55 to 150

Weight: 0.36 g (typ.)

2-7J1A

Electrical Characteristics (Ta = 25C)


Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cutoff current

ICBO

VCB = 120 V, IE = 0

100

nA

Emitter cutoff current

IEBO

VEB = 9 V, IC = 0

100

nA

V (BR) CEO

IC = 10 mA, IB = 0

50

hFE (1)

VCE = 2 V, IC = 0.5 A

400

1000

hFE (2)

VCE = 2 V, IC = 1.6 A

200

Collector-emitter saturation voltage

VCE (sat)

IC = 1.6 A, IB = 32 mA

0.22

Base-emitter saturation voltage

VBE (sat)

IC = 1.6 A, IB = 32 mA

1.10

60

500

95

Collector-emitter breakdown voltage


DC current gain

Rise time
Switching time

Storage time
Fall time

tr
tstg
tf

See Figure 1.
VCC
24 V, RL = 15
IB1 = 32 mA, IB2 = 53 mA

ns

2005-02-28

2SC5886A

VCC

IB1

IB1
Input

RL

20 s
Output

IB2
IB2
Duty cycle < 1%

Figure 1 Switching Time Test Circuit & Timing Chart

Marking

C5886A

Part No. (or abbreviation code)


Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

2005-02-28

2SC5886A

IC VCE

hFE IC

6
40

30
20

10

Common emitter
VCE = 2 V
Pulse test

hFE

50

DC current gain

Collector current IC (A)

70

10000

Common emitter
Tc = 25C
Pulse test

2
2

Tc = 100C

1000

25
55
100

IB = 1 mA

0
0

Collectoremitter voltage

10
0.001

10

0.01

0.1

VCE (V)

VCE (sat) IC
IC/IB = 50
Pulse test

Tc = 100C

0.1

55

25

0.01
0.001

0.01

0.1

Collector current

Common emitter
IC/IB = 50
Pulse test

55

Tc = 100C

0.1
0.001

10

25

0.01

VCE IB
10

VCE
55

Tc = 100C

25
1

0
0

0.4

Common emitter
Tc = 25C
Pulse test

(V)

Common emitter
VCE = 2 V
Pulse test

0.8

Baseemitter voltage

10

Collector current IC (A)

IC (A)

Collectoremitter voltage

Collector current IC (A)

0.1

IC VBE
5

10

VBE (sat) IC
10

Common emitter

Baseemitter saturation voltage


VBE (sat) (V)

Collectoremitter saturation voltage


VCE (sat) (V)

10

Collector current IC (A)

1.2

1
3
2
1.6
0.1
IC = 1 A

0.01
0.001

1.6

VBE (V)

0.01

0.1

Base current IB

10

(A)

2005-02-28

Transient thermal resistance


(junctioncase)
rth (jc) (C/W)

2SC5886A

rth(jc) tw
10

Tc = 25C Infinite heat sink


Curves apply only to limited areas of thermal resistance
(single nonrepetitive pulse).

1
0.001

0.01

0.1

Pulse width

tw

10

(s)

Safe operating area


100

IC max (pulse)*

Collector current IC (A)

10

100 s*

10 s*

1 ms*

IC max (continuous)*
10 ms*
1
100 ms*
DC operation
Tc = 25C

0.1
*: Single pulse Tc = 25C
Curves must be derated
linearly with increase in
temperature

0.01
0.1

Collectoremitter voltage

VCEO max
10

100

VCE (V)

2005-02-28

2SC5886A

RESTRICTIONS ON PRODUCT USE

030619EAA

The information contained herein is subject to change without notice.


The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

2005-02-28

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