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Electronic Devices and Circuit Theory

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DC Biasing - BJTs
Chapter 4

Ch.4 Summary

Biasing
Biasing: Applying DC voltages to a transistor in order
to turn it on so that it can amplify AC signals.

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Ch.4 Summary

Operating Point
The DC input
establishes an
operating or
quiescent point
called the Q-point.

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Ch.4 Summary

The Three Operating Regions


Active or Linear Region Operation
BaseEmitter junction is forward biased
BaseCollector junction is reverse biased
Cutoff Region Operation
BaseEmitter junction is reverse biased
Saturation Region Operation
BaseEmitter junction is forward biased
BaseCollector junction is forward biased
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Ch.4 Summary

DC Biasing Circuits
Fixed-bias circuit

Emitter-stabilized bias circuit


Collector-emitter loop
Voltage divider bias circuit
DC bias with voltage feedback

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Ch.4 Summary

Fixed Bias

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Ch.4 Summary

The Base-Emitter Loop


From Kirchhoffs voltage
law:
+VCC IBRB VBE = 0

Solving for base current:


VCC VBE
IB
RB

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Ch.4 Summary

Collector-Emitter Loop
Collector current:
IC IB

From Kirchhoffs voltage law:


VCE VCC ICRC

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Ch.4 Summary

Saturation
When the transistor is operating in saturation, current
through the transistor is at its maximum possible value.
V
ICsat CC
R
C

VCE 0 V

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Ch.4 Summary

Load Line Analysis


The load line end points are:

ICsat
IC = VCC / RC
VCE = 0 V

VCEcutoff
VCE = VCC
IC = 0 mA

The Q-point is the operating point where the value of RB sets the
value of IB that controls the values of VCE and IC .
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Ch.4 Summary

The Effect of VCC on the Q-Point

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Ch.4 Summary

The Effect of RC on the Q-Point

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Ch.4 Summary

The Effect of IB on the Q-Point

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Ch.4 Summary

Emitter-Stabilized Bias Circuit


Adding a resistor
(RE) to the emitter
circuit stabilizes
the bias circuit.

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Ch.4 Summary

Base-Emitter Loop
From Kirchhoffs voltage law:
VCC IE RE VBE IE RE 0

Since IE = ( + 1)IB:

VCC IBRB ( 1)IBRE 0


Solving for IB:
VCC VBE
IB
RB ( 1)RE
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Ch.4 Summary

Collector-Emitter Loop
From Kirchhoffs voltage law:
IE RE VCE ICRC VCC 0

Since IE IC:
VCE VCC IC(RC RE )

Also:
VE IE RE
VC VCE VE VCC IC RC
VB VCC IR RB VBE VE
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Ch.4 Summary

Improved Biased Stability


Stability refers to a condition in which the currents and
voltages remain fairly constant over a wide range of
temperatures and transistor Beta () values.

Adding RE to the emitter improves


the stability of a transistor.

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Ch.4 Summary

Saturation Level

The endpoints can be determined from the load line.

VCEcutoff:

VCE VCC
IC 0 mA

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ICsat:

VCE 0 V
VCC
IC
RC RE

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Ch.4 Summary

Voltage Divider Bias


This is a very stable bias circuit.
The currents and
voltages are nearly
independent of any
variations in .

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Ch.4 Summary

Approximate Analysis
Where IB << I1 and I1 I2 :
VB

R2VCC
R1 R2

Where RE > 10R2:


IE

VE
RE

VE VB VBE

From Kirchhoffs voltage law:

VCE VCC ICRC IE RE


IE IC
VCE V CCIC (RC RE )

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Ch.4 Summary

Voltage Divider Bias Analysis


Transistor Saturation Level
I Csat ICmax

V CC

RC RE

Load Line Analysis


Cutoff:
VCE VCC
IC 0 mA
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Saturation:
V
CC
I
C R R
C
E

VCE 0 V
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Ch.4 Summary

DC Bias With Voltage Feedback


Another way to improve
the stability of a bias
circuit is to add a
feedback path from
collector to base.

In this bias circuit the


Q-point is only slightly
dependent on the
transistor beta, .
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Ch.4 Summary

Base-Emitter Loop
From Kirchhoffs voltage law:
VCC IC RC IBRB VBE IE RE 0

I'C IC IB IC

Where IB << IC:

Knowing IC = IB and IE IC, the


loop equation becomes:
VCC BRC IBRB VBE IBRE 0

Solving for IB:

IB

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VCC VBE
RB (RC RE )
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Ch.4 Summary

Collector-Emitter Loop
Applying Kirchoffs voltage law:
IE + VCE + ICRC VCC = 0

Since IC IC and IC = IB:


IC(RC + RE) + VCE VCC =0

Solving for VCE:


VCE = VCC IC(RC + RE)

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Ch.4 Summary

Base-Emitter Bias Analysis


Transistor Saturation Level
I Csat ICmax

V CC

RC RE

Load Line Analysis


Cutoff

Saturation

VCE VCC

V
CC
I
C R R
C
E

IC 0 mA
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VCE 0 V
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Ch.4 Summary

Transistor Switching Networks


Transistors with only the DC source applied can be
used as electronic switches.

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Ch.4 Summary

Switching Circuit Calculations


Saturation current:
ICsat

VCC
RC

To ensure saturation:
IB

ICsat
dc

Emitter-collector
resistance at
saturation and cutoff:
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Rsat

VCEsat

ICsat

Rcutoff

VCC

ICEO

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Ch.4 Summary

Switching Time
Transistor switching times:

ton tr td
toff ts tf

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Ch.4 Summary

Troubleshooting Hints
Approximate voltages

VBE .7 V for silicon transistors


VCE 25% to 75% of VCC

Test for opens and shorts with an ohmmeter.


Test the solder joints.
Test the transistor with a transistor tester or a curve tracer.
Note that the load or the next stage affects the transistor
operation.

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Ch.4 Summary

PNP Transistors
The analysis for pnp transistor biasing circuits is
the same as that for npn transistor circuits. The
only difference is that the currents are flowing in
the opposite direction.

Electronic Devices and Circuit Theory


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