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VDSS
RDS(on)
ID
Pw
900 V
< 0.55
15 A
350 W
DESCRIPTION
The SuperMESH series is obtained through an
extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
3
2
1
TO-247
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STW15NK90Z
W15NK90Z
TO-247
TUBE
April 2004
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STW15NK90Z
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
900
900
30
ID
15
ID
9.5
60
IDM ()
PTOT
VESD(G-S)
dv/dt (1)
Tj
Tstg
350
Derating Factor
2.77
W/C
6000
4.5
V/ns
-55 to 150
THERMAL DATA
Rthj-case
0.36
C/W
Rthj-amb
Tl
50
300
C/W
C
Max Value
Unit
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
15
EAS
360
mJ
Parameter
Test Conditions
Min.
BVGSO
Gate-Source Breakdown
Voltage
30
Typ.
Max.
Unit
V
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STW15NK90Z
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
IDSS
1
50
A
A
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = 20V
10
VGS(th)
RDS(on)
Static Drain-source On
Resistance
V(BR)DSS
900
Unit
3.75
4.5
0.40
0.55
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
VDS = 15 V, ID = 7.5 A
VDS = 25V, f = 1 MHz, VGS = 0
15
6100
465
96
pF
pF
pF
Equivalent Output
Capacitance
230
pF
td(on)
tr
td(off)
tf
42
27
135
35
ns
ns
ns
ns
Qg
Qgs
Qgd
VDD = 720 V, ID = 15 A,
VGS = 10V
190
56
70
256
nC
nC
nC
Typ.
Max.
Unit
15
60
A
A
1.6
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 15 A, VGS = 0
748
10.5
28
ns
C
A
900
13
28.5
ns
C
A
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
Min.
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STW15NK90Z
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
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STW15NK90Z
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STW15NK90Z
Maximum Avalanche Energy vs Temperature
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STW15NK90Z
Fig. 1: Unclamped Inductive Load Test Circuit
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STW15NK90Z
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
0.40
0.80
0.015
0.03
19.85
20.15
0.781
0.793
15.45
15.75
0.608
5.45
0.620
0.214
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
3.55
3.65
0.140
0.143
4.50
5.50
0.177
0.216
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TYP
5.50
0.216
STW15NK90Z
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