Professional Documents
Culture Documents
1 References notes
Diusion Capacitance is the capacitance due to transport of charge carriers between two terminals of a device, for example, the diusion of carriers from anode to
cathode in forward bias mode of a diode or from emitter to baseforward-biased junction for a transistor. In a
semiconductor device with a current owing through it
(for example, an ongoing transport of charge by diusion)
at a particular moment there is necessarily some charge
in the process of transit through the device. If the applied voltage changes to a dierent value and the current
changes to a dierent value, a dierent amount of charge
will be in transit in the new circumstances. The change
in the amount of transiting charge divided by the change
in the voltage causing it is the diusion capacitance. The
adjective diusion is used because the original use of
this term was for junction diodes, where the charge transport was via the diusion mechanism. See Ficks laws of
diusion.
[1] William Liu (2001). MOSFET Models for Spice Simulation. New York: Wiley-Interscience. pp. 4244. ISBN
0-471-39697-4.
[2] Hailing Wang, Ten-Lon Chen, and Gennady Gildenblat,
Quasi-static and Nonquasi-static Compact MOSFET Models http://pspmodel.asu.edu/downloads/ted03.pdf
2 External links
Junction capacitance
Q = I(V )F
Consequently, the corresponding diusion capacitance:
Cdif f . is
Cdif f =
dQ
dV
dI(V )
F
dV
3.1
Text
3.2
Images
3.3
Content license