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Max rDS(on) = 23m at VGS = 10V, ID = 8.5A
REE I
DF
RoHS Compliant
M ENTATIO
LE
N
MP
LE
SO-8
VGS
ID
(Note 1a)
Pulsed
EAS
PD
TJ, TSTG
(Note 2)
Ratings
30
Units
V
20
8.5
40
32
mJ
Power dissipation
2.5
20
mW/oC
-55 to 150
Thermal Characteristics
RJA
RJA
(Note 1a)
50
oC/W
(Note 1)
25
C/W
Device
FDS8884
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
February 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
ID = 250A, VGS = 0V
BVDSS
TJ
ID = 250A, referenced to
25oC
IDSS
IGSS
VDS = 24V
30
V
mV/oC
23
1
TJ = 125oC
VGS = 0V
250
VGS = 20V
100
nA
2.5
On Characteristics (Note 3)
VGS(th)
VGS(th)
TJ
ID = 250A, referenced to
25oC
rDS(on)
1.2
1.7
mV/oC
-4.9
19
23
23
30
26
32
475
635
pF
100
135
pF
65
100
pF
f = 1MHz
0.9
1.6
10
ns
18
ns
42
68
ns
21
34
ns
9.2
13
nC
5.0
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
RG
Gate Resistance
tr
Rise Time
td(off)
tf
Fall Time
Qg
Qg
Qgs
Qgd
nC
1.5
nC
2.0
nC
trr
Qrr
ISD = 8.5A
0.9
1.25
ISD = 2.1A
0.8
1.0
33
ns
20
nC
Notes:
1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RJC is guaranteed by design while RCA is determined by the users board design.
a) 50C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125C/W when
mounted on a
minimun pad
2
FDS8884 Rev. A
www.fairchildsemi.com
30
VGS = 5.0V
VGS = 3.5V
VGS = 4.5V
20
VGS = 4.0V
VGS = 3V
10
0
0.0
3.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
4.0
2.5
VGS = 3.5V
2.0
1.5
1.0
VGS = 5V
0.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.0
0.8
40
80
120
TJ = 25oC
VDD = 5V
25
20
TJ = 150oC
10
TJ = -55oC
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
40
35
TJ = 150oC
30
25
TJ = 25oC
20
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
10
VGS = 0V
TA = 150oC
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
3
FDS8884 Rev. A
45
40
40
40
15
35
50
15
160
30
15
20
25
30
ID, DRAIN CURRENT(A)
ID = 8.5A
55
35
10
60
1.2
-40
VGS = 10V
ID = 8.5A
VGS = 10V
0.6
-80
VGS = 4V
VGS = 4.5V
1.6
1.4
VGS = 3V
www.fairchildsemi.com
600
8
VDD = 15V
VDD = 10V
6
4
CAPACITANCE (pF)
700
10
VDD = 20V
500
400
Ciss
f = 1MHz
VGS = 0V
300
200
100
0.1
10
30
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
9
8
ID, DRAIN CURRENT (A)
Crss
20
10
STARTING TJ = 25oC
STARTING TJ = 125oC
0.1
1
tAV, TIME IN AVALANCHE(ms)
10
4
3
2
10us
10
100us
0.1
1ms
10ms
100ms
0.01
0.1
TA = 25 C
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
1s
DC
100
75
100
125
150
2000
TA = 25oC
1000
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
100
I = I25
VGS=10V
150 T
A
-----------------------125
10
SINGLE PULSE
1
-5
10
-4
10
-3
10
-2
-1
10
10
10
t, PULSE WIDTH (s)
10
10
4
FDS8884 Rev. A
50
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RJA = 50oC/W
VGS = 4.5V
0
25
20
VGS = 10V
1
1
0.01
Coss
www.fairchildsemi.com
NORMALIZED THERMAL
IMPEDANCE, ZJA
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
1E-3
-5
10
t2
SINGLE PULSE
-4
10
-3
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA
-2
-1
10
10
10
10
10
10
5
FDS8884 Rev. A
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
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Product Status
Definition
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
FDS8884 Rev. A
www.fairchildsemi.com
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