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2- φ2.0 ± 0.1
3. High sensing accuracy
2 4
( Disk slit pitch : 0.7mm )
OPIC
3
OPIC
4. TTL compatible output 1 Anode 4 GND
5. Compact and light 2 Cathode 5 V CC
0.8 ± 0.15 2.0 ± 0.15 3 V OB 6 V OA
12.0
■ Applications 7.5 ± 0.1 4 - R2.5 8.0
4 ± 0.15 6.0
1. Electronic typewriters, printers
1.4 ± 0.15
2. Numerical control machines
GP1A30R
6.4 ± 0.15
11.4
10.5MIN. 9.9
6.4
8.0MIN. 4.4
2.5 ± 0.15
4 - R1.3 ± 0.15
3 - (1.27)
Forward current IF 65 mA
(2.54)
* Tolerance :± 0.3mm
*1
Peak forward current I FM 1 A * ( ) : Reference dimensions
Input
Reverse voltage VR 6 V 1
5 6
Power dissipation P 100 mW
Supply voltage VCC 7 V *“ OPIC” ( Optical IC ) is a trademark of the SHARP Corporation.
An OPIC consists of a light-detecting element and signal-
Output Low level output current I OL 20 mA
processing circuit integrated onto a single chip.
Power dissipation PO 250 mW
Operating temperature T opr 0 to + 70 ˚C
Storage temperature T stg - 40 to + 80 ˚C
*2
Soldering temperature Tsol 260 ˚C
*1 Pulse width <= 100µ s, Duty ratio= 0.01 *2 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
GP1A30R
■ Output Waveforms
Output A
( VOA)
t AH
t AP
Output B
( VOB)
t AB1 t BH
t BP
Fig. 1 Forward Current vs. Ambient Fig. 2 Output Power Dissipation vs.
Temperature Ambient Temperature
100 300
90
250
Output power dissipation Po ( mW )
80
Forward current I F ( mA )
70
65 200
60
50 150
40
100
30
20
50
10
0 0
0 25 50 70 75 100 0 25 50 70 75 100
Ambient temperature Ta ( ˚C ) Ambient temperature Ta ( ˚C )
Fig. 3 Duty Ratio vs. Frequency Fig. 4 Phase Difference vs. Frequency
0.9 130
VCC = 5V V CC = 5V
0.8 I F = 30mA 120 I F = 30mA
T a = 25˚C T a = 25˚C
Phase differenceθ AB1 ( deg. )
0.7 110
t ABI
0.6 t AH 100 θ AB1 =x 360˚
t AP
t AP ( Output A )
Duty ratio
0.5 90
0.4 80
t BH
( )
t BP Output B
0.3 70
0.2 60
0.1 50
1 2 5 10 20 1 2 5 10 20
Frequency f ( kHz ) Frequency f ( kHz )
GP1A30R
Fig. 5 Duty Ratio vs. Ambient Temperature Fig. 6 Phase Difference vs. Ambient
Temperature
1.0 140
V CC = 5V V CC = 5V
0.9 I F = 30mA 130 I F = 30mA
f = 2.5kHz f = 2.5kHz
0.8 120
t BP
0.5 90
0.4 80
0.3 70
0.2 60
0.1 50
0 40
0 25 50 75 100 0 25 50 75 100
Ambient temperature Ta ( ˚C ) Ambient temperature Ta ( ˚C )
Fig. 7 Duty Ratio vs. Distance ( X direction ) Fig. 8 Phase Difference vs.
Distance ( X direction )
0.9 130
V CC = 5V V CC = 5V
I F = 30mA I F = 30mA
0.8 120
f= 2.5kHz f= 2.5kHz
T a = 25˚C Ta = 25˚C
Phase difference θ AB1 ( deg. )
0.7 110
t AH
t AP ( Output A )
0.6 100 t ABI
t BH θ AB1= x 360˚
( Output B )
Duty ratio
t BP t AP
0.5 90
Reference position
0.4 80 (- ) ( +)
0.3 70
GP1A30R
0.2 60
Disk
0.1 50
- 1.0 - 0.5 0 0.5 1.0 - 1.0 - 0.5 0 0.5 1.0
Distance X ( mm ) ( Shifting encoder ) Distance X ( mm ) ( Shifting encoder )
Fig. 9 Duty Ratio vs. Distance ( Y direction ) Fig.10 Phase Difference vs.
Distance ( Y direction )
0.9 130
V CC = 5V VCC = 5V
I F = 30mA I F = 30mA
0.8 120
f= 2.5kHz f= 2.5kHz
Phase difference θ AB1 ( deg. )
T a = 25˚C T a = 25˚C
0.7 110
t AH
( Output A )
t AP t AB1
0.6 100 θ AB1 = x 360˚
Duty ratio
t BH t AP
( Output B )
t BP
0.5 90
GP1A30R
0.4 80
(+)
Reference
0.3 70 position
(-)
0.2 60
Disk
0.1 50
- 1.0 - 0.5 0 0.5 1.0 - 1.0 - 0.5 0 0.5 1.0
Distance Y ( mm ) ( Shifting encoder ) Distance Y ( mm ) ( Shifting encoder )
GP1A30R
Fig.11 Duty Ratio vs. Distance ( Z direction ) Fig.12 Phase Difference vs.
Distance ( Z direction )
0.9 130
V CC = 5V VCC = 5V
I F = 30mA I = 30mA
0.8 120 F
f= 2.5kHz f= 2.5kHz
t BP
0.5 90
0.4 80
( Detecting side )
0.3 70 Z
Disk
OPIC
0.2 60
( Emitting side )
0.1 50
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Distance Z ( mm ) ( Shifting encoder ) Distance Z ( mm ) ( Shifting encoder )
■ Measurement Conditions
<Basic Design>
A
R O ( distance between the disk center and half point of a slit ) ,
P ( slit pitch ) , S 1 and S 2 ( installing position of photointer-
4-R1.3
rupter ) will be provided by the following equations.
Slit pitch : P ( slit center )
3
5
N
.4
13
GP1A30R
15
20
2x p x RO
P= ( mm )
N
S 1= R O- 1.765 ( mm ) , S 2= S 1+ 6.7( mm )
1.4
Note ) When the number of slits is changed, values in parenthesis
6.4 are also changed according to the number.
S2
Disk center
(18.385)
Enlarged drawing
of A portion N= 200P/R
Slit pitch : P
12
200
7.5
R O= x 13.45 ( mm )
120
0.8 2
= 22.42mm
A
2 x p x 22.42
r2
S1 9.9 P= ( mm )
P 200
(11.685 )
= 0.704mm
■ Precautions for Use
r1
S 1= 22.42- 1.765
( 1 ) This module is designed to be operated = 20.655mm
r1= r2 S 2= 20.655+ 6.7
at I F = 30mA TYP.
= 27.355mm
( 2 ) Fixing torque : MAX. 0.6Nm (6kgf • cm )
( 3 ) In order to stabilize power supply line, Disk center
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