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Plating
Dry plating
CVD, Sputtering, Evaporation etc.
-- Thin film is obtained in vacuum or low pressure
environment (non-electrolyte)
Wet plating
Electroplating, Electroless plating
Immersion plating
-- Thin film is obtained from ion containing electrolyte
General Applications
Metal electrowinning and electrorefining
Metal/alloy plating for decoration and
corrosion protection
Functional material electroplating
Electroless copper plating for PCB
Brief Review
Electro and Electroless Plating
Eletroplating
Electroless
plating
Immersion
plating
Driving
force
External power
Autocatalytic
redox reaction
Chemical
displacement
Cell reaction
MAMC
M2++RM+O
M n++M1M+M1n+
Anode
reactant
M or H2O
R, reducing
agent in solution
M1 , dissolving
metal
Nature of
deposit
M contaminated
by O/R derived
species
Pure metal
(porous and
poorly adherent)
Thickness
limit()
1-100
1-100
<10
Electroplating
current
e
cathode
OH
M
M
anode
= =
Double layer
Diffuse double layer
Compact double layer
+
-
Cu
Solvated cation
Electrode
+
IHP
Solution
Electrical
migration
Diffusion
Cu substrate
+
Solvent molecule
OHP
Precipitation of Metal
Charge transfer
kink
step
Surface diffusion
Electroless Plating
Catalyzed surface
substrate
R
M
O
M+
M+ + R
catalyzed surface
M + O
Immersion Plating
M1
M22+
2eM2
Substrate(M2)
M12+
Electroless Plating
Deposition of a metal coating by a controlled
chemical reduction, catalyzed by the metal
or alloy being deposited
Deposition process is autocatalytic reaction
Electrons generated in-situ
Metal coatings on nonconductive substrate
Independent on geometry of substrate
Catalyzing Surface
(Activation)
Chemical Reactions
NiP Electroless Plating
Overall Reaction
Ni2+ + 2H2PO2- + 2H2O
Secondary Reaction
H2PO2- + H
H2O + OH- + P
Chemical Reactions
Copper Electroless Plating
Cu2+ + EDTA4-
Cu(EDTA)2-
logK = 18.70
Ethylen-Deamin-Tetra-Acid C10H16N2O8
Overall Reaction
Cu (EDTA)2- + 2HCHO + 4OH Cuo + 2H2O + H2 + 2HCOO- + EDTA4-
Disadvantages
Contamination or impurities in film
Reproducibility
Toxic waste generation
Recent Applications
ULSI Application
Copper Metallization : IBM 1997
Replace aluminum Interconnects with copper
MEMS Application
LIGA (or LIGA- like process): 1990
Fabrication Microstructure by Electroforming
RF MEMS, Bio MEMS Fabrication
Packaging Application
UBM (Under Bump Metallurgy): 1997
Fabrication of Ni/Au by Electroless Plating
Copper in Electronics
Solar cell
Comparison of Al and Cu
Resistivity ()
Melting point ()
EM endurance (normalized to Al)
Heat of formation of oxide (/mol)
Thermal exp. Coeff (1/K)
Diffusion into SiO2
Agglomeration
RIE
Al
2.8
660
1
-400
23.210-6
No
No
easy
Cu
1.7
1083
20
-40
16.1210-6
Yes
small
difficult
Electromigration
Damascene Process
Seed layer
(By Electroless plating,
MOCVD,Sputtering)
SiN
Barrier
Insulator deposition
Via
Plated metal
Insulator
Via definition
Electroplating
Line
Via
Line definition
CMP
anti-conformal
void
conformal
seam
Super-filling
defect-free
Role of Additives
Inhibitor
Accelerator
CMP
Cu
Cu
Super filling
300nm
250nm
200nm
Cu-filled Via
MEMS Application
LIGA Process
Electroforming
Remove photoresist
Gold Electroplating
Nickel Electroplating
Aspect ratio 80
Microantenna
E. M. El-Giar, J. of ECS, 2000
Nanowire Electroplating
Bi2Te3 Nanowire
J. P. Fleurial, Interface 2002
Packaging Application
Bump
Ni
Au
Zincate
Layer
Si
Al
PCB Microbumps
S. Zhang, J. of ECS, 1999
Pb-Sn Microbumps
IC interconnect
Adhesion
Uniformity
Reliability
Reproducibility
Summary
1. The electro and electroless plating are re-emerging
coating technologies in electronics industry.
2. Plating techniques are the case sensitive technique.
And then precise control of operating conditions
are required.
3. The inter-disciplinary collaborations is essential for
successful outcomes.
4. Roles of metallurgists become more important for
the reliable thin film processing.