Az 3300-f Photoresist

AZ 3300-F Photoresist
Data Package
The information contained herein is, as far as we are aware, true and accurate. However, no representations
or warranties, either express or implied, whether of merchantable quality, fitness for any particular
purpose or of any other nature are hereby made in respect of the information contained in this
presentation or the product or products which are the subject of it. In providing this material, no license or
other rights, whether express or implied, are given with respect to any existing or pending patent, patent
application, trademarks, or other intellectual property right.
AZ 3312-F
AZ 3330-F
AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are
registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow,
SWG, and TARP are trademarks of AZ Electronic Materials.
AZ 3312-F
Very fast resist

High resolution (i-line 0.6m, g-line 0.8m)
Excellent for contact holes, vias, implants, and
non critical gates
AZ 3330-F
Great for pad layer applications

Can be coated from 2.5 to 5m
Spin Curves
6
Film Thickness [m]
AZ 3312-F
AZ 3330-F
0
0
1000
2000
3000
4000
5000
6000
7000
rpm
Features & Benefits
Why AZ 3300 Cross-over Resist?

Global infrastructure to support your
worldwide business with expanding local
support networks
Excellent Performance and Value in
all our products and services
Wide selection of solutions to your
problems
Features & Benefits
Sensitivity to g, h, and i-line wavelengths

Process relatively insensitive to bake conditions,
develop times, and develop temperatures

Compatible with inorganic and organic (w/ & w/o
surfactant) developers
Thermal stability to 125
Good depth of focus, linearity, and photospeed
for crossover applications
Very high stability against particle generation
Excellent value for performance
Suggested Process Conditions
Spray/Puddle Process:
Softbake 90 -110 C,
60 - 90 sec
Expose: g-line, h-line, i-line
stepper or broadband
exposure source
Where necessary, PEB:
110C, 60 - 90 sec.
Develop: AZ 300 MIF
developer, 60 sec. spraypuddle
Double Puddle Process:

Softbake 90 -110C,
60 - 90 sec
Expose: g-line, h-line, iline stepper or broadband
exposure source
Where necessary, PEB:
110C, 60 - 90 sec.
Develop: AZ 917 MIF
developer, 52 sec. double
puddle
Optical Parameters
Refractive Index
Bleached
n
k
365nm
1.7006
0.00805
405nm
1.6752
0.00433
435nm
1.6611
0.00331
Unbleached
n
k
1.7046
0.03251
1.6872
0.03369
1.6908
0.02028
Optical Parameters
Dill Parameters
i-line:
A = 1.0870 (m-1)
B = 0.0700 (m-1)
C = 0.0260 (cm2/mJ)
g-line:
A= 0.6750 (m-1)
B= 0.0150 (m-1)
C= 0.0188 (cm2/mJ)
Cauchy Coefficients
A
1.6217
B
0.01156 m
C
7.77E-07 m4
Unbleached 1.6200
0.00705 m
1.64E-03 m4
Bleached
g-line Swing Curve
60
Dose (mJ/cm )
55
50
45
40
35
30
0.950
1.000 1.050
1.100
1.150
1.200 1.250
1.300
1.350 1.400
Thickness ( m)
SB: 90C, 60sec

PEB 110C, 60sec
AZ300MIF developer, spray puddle,60sec @ 23C
1.450
i-line Swing Curve
45
43
Dose(mJ/cm )
41
39
37
35
33
31
29
27
25
1.050 1.075 1.100 1.125 1.150 1.175 1.200 1.225 1.250 1.275 1.300 1.325 1.350
Thickness( m)
SB: 90C, 60sec

PEB 110C, 60sec
AZ300MIF developer, spray puddle,60sec @ 23C
With
AZ 300 MIF Developer
Nikon i-line Stepper
Exposure Latitude for 0.6m Dense Lines, FT = 1.184 m
0.80
Nominal: 62mJ/cm
Exposure Latitude: 28%
0.75
Measured Linewidth [m]
0.70
0.65
0.60
0.55
0.50
0.45
0.40
44
48
52
56
60
64
68
72
76
Exposure Dose [mJ/cm]
SB: 90C, 60sec PEB 110C, 60sec

AZ 300MIFDeveloper, spray puddle, 60sec @ 23C
Nikon 0.54 NA i-line
80
0.90
Nominal Energy: 63mJ/cm

0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
45
50
55
60
65
70
75
80
85

1.00
Nominal Energy: 62 mJ/cm

0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
50
55
60
65
70
75
80
85

1.10
Nominal Energy: 62mJ/cm

1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
50
55
60
65
70
75
80
85

1.20
Nominal Energy: 64 mJ/cm

1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
50
55
60
65
70
75
80
85

Linearity for Dense Lines, Focus = - 0.20 m, FT = 1.188 m
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
AZ3312-F, 61mJ/cm
0.65
0.60
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
Nominal Linewidth [m]
1.00
1.05
1.10

AZ 300MIFDeveloper, spray puddle, 60sec @23C
Bossung Curve; 0.7m Dense Lines; FT = 1.18 m
1.0
0.9
CD
0.8
0.7
0.6
0.5
0.4
0.3
-2
-1.5
-1
-0.5
0.5
1.5
46
49
52
55
58
61
64
67
70
73
76
79
82
Focus
SB: 90C, 60sec
PEB 110C, 60sec
AZ 300MIFDeveloper, spray puddle,60sec @ 23C
DOF 0.7m Dense Lines, FT = 1.18 m , 61 mJ/cm2
-1.4m
-1.2m
-1.0m
-0.8m
-0.6m
+0.2m
0.0m
-0.2m
-0.4m
SB: 90C, 60sec

PEB 110C, 60sec
Bossung Curve; 0.8m Dense Lines, FT = 1.18 m
1.1
46
49
52
55
58
61
64
67
70
73
76
79
82
1.0
CD
0.9
0.8
0.7
0.6
0.5
0.4
-2
-1.5
-1
-0.5
0.5
1.5
Focus
SB: 90C, 60sec
PEB 110C, 60sec
DOF 0.8m Dense Lines, FT = 1.18 m, 61 mJ/cm2
-1.6m
-1.4m
-1.2m
-1.0m
-0.8m
-0.6m
+0.4m
+0.2m
0.0m
-0.2m
-0.4m
SB: 90C, 60sec

PEB 110C, 60sec
1.2
1.1
46
49
52
55
58
61
64
67
70
73
76
79
82
CD
1.0
0.9
0.8
0.7
0.6
0.5
-2
-1.5
-1
-0.5
0.5
1.5
Focus
SB: 90C, 60sec
PEB 110C, 60sec
DOF 0.9m Dense Lines, FT = 1.18 m, 61 mJ/cm2
-1.6m
-1.4m
-1.2m
-1.0m
-0.8m
-0.6m
+0.4m
+0.2m
0.0m
-0.2m
-0.4m
SB: 90C, 60sec

PEB 110C, 60sec
1.3
46
49
52
55
58
61
64
67
70
73
76
79
82
1.2
CD
1.1
1.0
0.9
0.8
0.7
-2
-1.5
-1
-0.5
0.5
1.5
Focus
SB: 90C, 60sec
PEB 110C, 60sec
DOF 1.0m Dense Lines, FT = 1.18 , 64 mJ/cm2
-1.6m
-1.4m
-1.2m
-1.0m
-0.8m
-0.6m
+0.4m
+0.2m
0.0m
-0.2m
-0.4m
SB: 90C, 60sec

PEB 110C, 60sec
AZ 3312- F Photoresist
Thermal Flow
No Bake
115C
120C
125C
130C
10 m
1 m
Processing Conditions:
Film Thickness: 1.188m
Soft bake: 90C/60sec, PEB: 110C/60sec
Nikon i-line stepper, 0.54NA, AZ 300MIF Developer, 60sec spray/puddle @23C
With
AZ 300 MIF Developer
ASML i-line Stepper
Exposure Latitude for 1.50m Dense Lines, FT = 2.99m
2.0
249 mJ/cm
21% Exposure Latitude
1.9
Measured CD (m)
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
200
220
240
260
280
300
Exposure (mJ/cm)
SB : 110C for 60sec contact
Exposure : ASML/250 i-line, Conventional NA=0.60 sigma=0.75
PEB : 110C for 60sec contact
Develop: AZ 300 MIF developer / Single puddle for 60 sec @ 23C
Exposure Latitude for 1.50 m Dense Lines, FT = 2.99m
200 mJ/cm
210 mJ/cm
220 mJ/cm
230 mJ/cm
240 mJ/cm
250 mJ/cm
300 mJ/cm
290 mJ/cm
280 mJ/cm
270 mJ/cm
260 mJ/cm

Linearity for Dense Lines @ 250 mJ/cm, FT = 2.99m
2
Measured CD (m)
1.75
1.5
1.25
0.75
0.5
0.5
0.75
1.25
1.5
1.75
Mask CD (m)
Linearity for Dense Lines, FT = 2.99m
2.00 m
1.80 m
1.70 m
1.60 m
1.50 m
1.40 m
0.80 m
1.00 m
1.10 m
1.20 m
1.30 m

Exposure : ASML/250 i-line, Conventional NA=0.60 sigma=0.75, 250mJ/cm
DOF for 1.50 m Dense Lines, FT = 2.99m
2.0
Measured CD (m)
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
-1.5
-1.25
-1
-0.75
-0.5
-0.25
0.25
0.5
0.75
1.25
1.5
Focus (m)
Develop: AZ 300 MIF developer/ Single puddle for 60 sec @ 23C
DOF for 1.50 m Dense Lines, FT = 2.99m
1.00 m
0.80 m
0.60 m
0.40 m
0.20 m
0.00 m
-1.00 m
-0.80 m
-0.60 m
-0.40 m
-0.20 m

Exposure : ASML/250 i-line, Conventional NA=0.60 sigma=0.75, 250mJ/cm
Develop: AZ 300 MIF Developer / Single puddle for 60 sec @ 23C

Az 3300-f Photoresist

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Available Formats

Az 3300-f Photoresist

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Copyright:

Available Formats

AZ 3300-F Photoresist

Very fast resist

Great for pad layer applications

Film Thickness [m]

Features & Benefits

Why AZ 3300 Cross-over Resist?

Features & Benefits

Sensitivity to g, h, and i-line wavelengths

develop times, and develop temperatures

Double Puddle Process:

SB: 90C, 60sec

SB: 90C, 60sec

Measured Linewidth [m]

Exposure Dose [mJ/cm]

SB: 90C, 60sec PEB 110C, 60sec

Nominal Energy: 63mJ/cm

Measured Linewidth [m]

Exposure Dose [mJ/cm]

SB: 90C, 60sec PEB 110C, 60sec

Nominal Energy: 62 mJ/cm

Measured Linewidth [m]

Exposure Dose [mJ/cm]

SB: 90C, 60sec PEB 110C, 60sec

Nominal Energy: 62mJ/cm

Measured Linewidth [m]

Exposure Dose [mJ/cm]

SB: 90C, 60sec PEB 110C, 60sec

Nominal Energy: 64 mJ/cm

Measured Linewidth [m]

Exposure Dose [mJ/cm]

SB: 90C, 60sec PEB 110C, 60sec

Measured Linewidth [m]

SB: 90C, 60sec PEB 110C, 60sec

SB: 90C, 60sec

SB: 90C, 60sec

SB: 90C, 60sec

SB: 90C, 60sec

SB : 110C for 60sec contact

SB : 110C for 60sec contact

SB : 110C for 60sec contact

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