APT10M25BVFR

100V

POWER MOS V

75A 0.025

FREDFET

Power MOS V is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.

Fast Recovery Body Diode

TO-247

100% Avalanche Tested

D
FREDFET

Lower Leakage

Popular TO-247 Package

Faster Switching

MAXIMUM RATINGS
Symbol
VDSS
ID

All Ratings: TC = 25C unless otherwise specified.

Parameter

APT10M25BVFR

UNIT

100

Volts

Drain-Source Voltage
Continuous Drain Current @ TC = 25C
1

75

Amps

IDM

Pulsed Drain Current

VGS

Gate-Source Voltage Continuous

30

Gate-Source Voltage Transient

40

Total Power Dissipation @ TC = 25C

300

Watts

Linear Derating Factor

2.4

W/C

VGSM
PD
TJ,TSTG

300

-55 to 150

Operating and Storage Junction Temperature Range

TL

Lead Temperature: 0.063" from Case for 10 Sec.

IAR

Avalanche Current

75

Repetitive Avalanche Energy

EAS

Single Pulse Avalanche Energy

300

(Repetitive and Non-Repetitive)

EAR

Volts

Amps

30
4

mJ

1500

STATIC ELECTRICAL CHARACTERISTICS

BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)

Characteristic / Test Conditions

MIN

Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A)

100

Volts

75

Amps

On State Drain Current

(VDS > I D(on) x R DS(on) Max, VGS = 10V)

Drain-Source On-State Resistance

TYP

(VGS = 10V, 0.5 ID[Cont.])

MAX

0.025

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)

250

UNIT

Ohms
A

Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C)

1000

Gate-Source Leakage Current (VGS = 30V, VDS = 0V)

100

nA

Volts

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

APT Website - http://www.advancedpower.com

405 S.W. Columbia Street

Bend, Oregon 97702-1035

Phone: (541) 382-8028

FAX: (541) 388-0364

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15

FAX: (33) 5 56 47 97 61

EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord

050-5605 Rev B

Symbol

DYNAMIC CHARACTERISTICS
Symbol

APT10M25BVFR

Characteristic

Test Conditions

MIN

TYP

MAX

Ciss

Input Capacitance

VGS = 0V

4300

5160

Coss

Output Capacitance

VDS = 25V

1600

2240

Reverse Transfer Capacitance

f = 1 MHz

650

975

VGS = 10V

150

225

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25C

28
75

42
115

VGS = 15V

13

26

Crss
Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain ("Miller ") Charge

t d(on)

Turn-on Delay Time

tr

Rise Time

t d(off)

Turn-off Delay Time

tf

VDD = 0.5 VDSS

22

44

ID = ID [Cont.] @ 25C

40

60

RG = 1.6

10

20

TYP

MAX

Fall Time

UNIT
pF

nC

ns

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

Characteristic / Test Conditions

5

Continuous Source Current

IS

MIN

75

(Body Diode)

ISM

Pulsed Source Current

VSD

Diode Forward Voltage

(VGS = 0V, IS = -ID [Cont.])

dv/
dt

Peak Diode Recovery dv/dt

300

(Body Diode)

UNIT
Amps

1.3

Volts

V/ns

t rr

Reverse Recovery Time

(IS = -ID [Cont.], di/dt = 100A/s)

Tj = 25C

200

Tj = 125C

300

Q rr

Reverse Recovery Charge

(IS = -ID [Cont.], di/dt = 100A/s)

Tj = 25C

0.5

Tj = 125C

1.1

IRRM

Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/s)

Tj = 25C

10

Tj = 125C

14

ns
C
Amps

THERMAL CHARACTERISTICS
Symbol

Characteristic

MIN

TYP

MAX

0.42

RJC

Junction to Case

RJA

Junction to Ambient

40

C/W

1 Repetitive Rating: Pulse width limited by maximum T

j
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%

4 Starting T = +25C, L = 0.53mH, R = 25, Peak I = 75A

j
G
L
5 The maximum current is limited by lead temperature.

3 See MIL-STD-750 Method 3471

6 I -I [Cont.], di/ = 100A/s, V = 50V, T 150C, R = 2.0

S
D
R
j
G
dt

APT Reserves the right to change, without notice, the specifications and information contained herein.

D=0.5

0.1

0.2

0.05

0.1
0.05

0.01
0.005

Note:

0.02

PDM

Z JC, THERMAL IMPEDANCE (C/W)

0.5

050-5605 Rev B

UNIT

0.01
SINGLE PULSE

t1
t2

Duty Factor D = t1/t2

Peak TJ = PDM x ZJC + TC

0.001
10-5

10-4

10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

APT10M25BVFR
150

VGS=10V & 15V

125
7V
100

6.5V

75

6V

50

5.5V
5V

25
4.5V

ID, DRAIN CURRENT (AMPERES)

125

VDS> ID (ON) x RDS (ON)MAX.

250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE

100

TJ = +125C

75
50

25

TJ = +125C

TJ = -55C

TJ = +25C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
0

BVDSS, DRAIN-TO-SOURCE BREAKDOWN

VOLTAGE (NORMALIZED)

ID, DRAIN CURRENT (AMPERES)

80

60

40

20

50
75
100
125
150
TC, CASE TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

75

6V

50

5.5V
5V

25
4.5V

1.2
V

1.1

GS

NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D

VGS=10V

1.0

0.9

0.8

VGS=20V

25
50
75
100
125
150
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT

1.15

1.10

1.05

1.00

0.95

0.90

-50

1.2
I = 0.5 I [Cont.]
D

GS

= 10V

1.75
1.50
1.25
1.00
0.75

0.50
-50

6.5V

-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

VGS(TH), THRESHOLD VOLTAGE

(NORMALIZED)

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

(NORMALIZED)

25

2.00

7V
100

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

ID, DRAIN CURRENT (AMPERES)

TJ = -55C
TJ = +25C

10V

4V
0
1
2
3
4
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

4V
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0

150

VGS=15V

125

1.1
1.0

0.9
0.8
0.7

0.6

-50

-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

050-5605 Rev B

ID, DRAIN CURRENT (AMPERES)

150

APT10M25BVFR
400

100

C, CAPACITANCE (pF)

ID, DRAIN CURRENT (AMPERES)

100S
OPERATION HERE
LIMITED BY RDS (ON)

1mS

50

10mS
10
5

100mS

TC =+25C
TJ =+150C
SINGLE PULSE

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

VDS=20V
VDS=50V

12
VDS=80V
8

Ciss
Ciss

5,000

Coss
Crss
1,000
500

.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

I = I [Cont.]

16

10,000

100

1
5
10
50
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D

Coss

DC

20

15,000

50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

200
100
TJ =+150C

TJ =+25C

50

10
5

0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-247 Package Outline

4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)

15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)

Drain

6.15 (.242) BSC

20.80 (.819)
21.46 (.845)

3.50 (.138)
3.81 (.150)

2.87 (.113)
3.12 (.123)

4.50 (.177) Max.

0.40 (.016)
0.79 (.031)

1.65 (.065)
2.13 (.084)

19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)

Gate
Drain
Source

050-5605 Rev B

2.21 (.087)
2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583

5,045,903
4,748,103

5,089,434
5,283,202

5,182,234
5,231,474

5,019,522
5,434,095

5,262,336
5,528,058