ST 2SA1268

PNP Silicon Epitaxial Planar Transistor

For high voltage applications.
The transistor is subdivided into two groups, G and L
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (T

= 25? )
Symbol

Value

Unit

Collector Base Voltage

-VCBO

120

Collector Emitter Voltage

-VCEO

120

Emitter Base Voltage

-VEBO

Collector Current

-IC

100

mA

Emitter Current

IE

100

mA

Ptot

300

mW

Junction Temperature

Tj

125

Storage Temperature Range

TS

-55 to +125

Power Dissipation

C
C

G S P FORM A IS AVAILABLE

.: (495) 795-0805
: (495) 234-1603
. : info@rct.ru
: www.rct.ru

Free Datasheet http://www.datasheet4u.com/

ST 2SA1268
Characteristics at Tamb=25 OC
Symbol

Min.

Typ.

Max.

Unit

Current Gain Group G

hFE

200

400

hFE

350

700

-V(BR)CEO

120

fT

100

MHz

NF

dB

COB

pF

-VBE

0.65

-ICBO

0.1

-IEBO

0.1

-VCE(sat)

0.3

DC Current Gain
at -VCE=6V, -IC=2mA

Collector Emitter Breakdown Voltage

at -IC=1mA
Gain Bandwidth Product
at -VCE=6V, -IC=1mA
Noise Figure
at -VCE=6V, -IC=0.1mA, RG=10k, f=10Hz
Output Capacitance
at -VCB=10V, f=1MHz
Base Emitter Voltage
at -VCE=6V,-IC=2mA
Collector Cutoff Current
at -VCB=120V
Emitter Cutoff Current
at -VEB=5V
Collector Saturation Voltage
at -IC=10mA, -IB=1mA

G S P FORM A IS AVAILABLE

SEMTECH ELECTRONICS LTD.

(Subsidiary of Semtech International Holdings Limited, acompany

listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002
Free Datasheet http://www.datasheet4u.com/