Handbook of X-ray Photoelectron Spectroscopy ‘A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data by John F. Moulder William F. Stickle Peter E. Sobol Kenneth D. Bomben Edited by Sill Chastain Roger C. King, Jr Published by: Physical Electronics, Inc. 6509 Flying Cloud Drive Eden Prairie, Minnesota 55344 United States of AmericaCopyright 1992, 1995 by Physical Electronics, Inc. All rights reserved. ‘No part of the contents of this book ‘may be reproduced or transmitted in any form or by any means ‘without the prior written permission of the publisher, ISBN: 0-9648124-1-X Library of Congress Catalog Card Number: 95-071385 Printed in the United States of AmericaPreface 2cryy Photoelectron Spectroscopy (XPS), also known as Electron Spectroscopy for Chemical Analysis (ESCA), is wide- ly used to investigate the chemical composition of surfaces. The use of XPS in analytical laboratories throughout the world atests to the problem-solving capability of this technique. The ability to explore the first few atomic layers and ‘sign chemical states tothe detected atoms has shown XPS to be a powerful addition to any analytical laboratory. AA great deal of information has been published on the principles of the technique and the diverse range of applications for which it is used. Volumes of XPS spectra exist in the scientific literature, and international committees are estab. lishing databases with reference spectra that will be made available to the general publi. Itis not the authors’ intent to The previous version of this handbook, published in 1978, contained data acquired with a cylindvical miror analyzer (CMA), Since that time, our XPS hardware has evolved. We currently use a spherical capacitance analyzer (SCA) in conjunction with improved detector technology and the choice of either a high-performance Al x-ray monochromator or an achromatic Mg/Al dual anode x-ay source. A 1992 version of this handbook was updated from the previous hand. book with data acquired using our current SCA, which has a transmission function different from that of a CMA, and both monochromatic and achromatic x-ray sources. In addition, data are included from several elements not contained in the 1978 version of the handbook. The current 1995 version of the handbook is a reprint of the 1992 version which includes a few minor modifications. This handbook is meant to serve as a guide and reference work for the identifica, tion, quantification, calibration and interpretation of XPS spectra for users of Physical Electronics XPS systems equipped With SCAs and Omni Focus™ lenses. It is the authors’ hope tht this handbook will play a useful role in the practice of XPS. Physical Electronics, Inc. October 1995Acknowledgments: The authors and editor would like to thank the following individuals for their contributions to the ‘completion of this handbook: Dr. Charles Wagner, Surfex, for his contributions to the chemical states database; Dr Albert Bevolo, lowa State University, Ames Laboratory (USDOE), for providing the rare earth samples; Linda Wirtes, Physical Electronics Laboratory; Teresa Salvati: Dr. Douglas Stickle; and Dr. Michael Burrell, General Electric Com, any. The National Museum of Natural History - Smithsonian Institution provided the cinnabar sample (NMNH R630) used for the mercury data. We also gratefully acknowledge the authors ofthe previous handbook.Table of Contents I. X-ray Photoelectron Spectroscopy A . Principles of the Technique... . Preparing and Mounting Samples .. Experimental Procedure Introduction ..... Removing Volatile Material Removing Nonvolatile Organic Contaminants Surface Etching Abrasion Fracturing and Scraping Grinding to Powder ‘Mounting Powders for Analysis NOY eeye 14 1. Technique for Obtaining Spectra 2. Instrument Calibration 3. Programming Scans for an Unknown Sample a. Survey Scans b. Detail Scans Data Interpretation. 1. The Nature of the Spectrum a. General Features b. ‘Types of Lines 2. Line Identification 3. Chemical State Identification a. Determining Static Charge on Insulators b. Photoelectron Line Chemical Shifts and Separations c. Auger Line Chemical Shifts and Auger Parameter 4. Chemical Information from Satellite Lines and Peak Shapes4, Quantitative Analysis 5. Determining Element Location a. Depth b. Surface Distribution ¢. Insulating Domains on a Conductor F. How to Use this Handbook. Standard XPS Spectra of the Elements I. Appendix A. Auger Parameters B. Chemical States Table C. Chemical States Tables References, D. Valence Band Spect E. Atomic Sensitivity Factors for X-ray Sources at 90° F. Atomic Sensitivity Factors for X-ray Sources at 54.7". G. Line Positions by Element for Al Kat X-rays H. Line Positions by Element for Mg Kot X-ray: J. Line Positions in Numerical Order. K. Periodic Table.I. X-ray Photoelectron SpectroscopyHandbook of X-ray Photoelectron Spectroscopy A. Introduction X-ray Photoelectron Spectroscopy (XPS) was developed in the rmid-1960s by Kai Siegbahn and his research group at the University of Uppsala, Sweden. The technique was first known by the acronym ESCA (Electron Spectroscopy for Chemical Analysis). The advent of commercial manufacturing of surface analysis equipment in the early 1970s enabled the placement of equipment in laboratories throughout the world. In 1981, Siegbahn was awarded the Nobel Prize for Physics for his work with XPS, This handbook is meant to furnish the user with much of the information necessary to use XPS for diverse types of surface analysis. Information is provided on methods of sample preparation, data gathering, elemental identification, chemical stale identification, quantitative calculation and elemental dis- tribution. Surface analysis by XPS involves irradiating a solid in vacuo with monoenergetic soft x-rays and analyzing the emitted @ PHYSICAL ELECTRONICS A. Introduction electrons by energy. The spectrum is obtained as a plot of the ‘number of detected electrons per energy interval versus their kinetic energy. Each element has a unique spectrum. The spectrum from a mixture of elements is approximately the sum of the peaks of the individual constituents, Because the mean free path of electrons in solids is very small, the detected electrons originate from only the top few atomic layers, making XPS a unique surface-sensitive technique for ‘chemical analysis. Quantitative data can be obtained from peak heights or peak areas, and identification of chemical states often can be made from exact measurement of peak Positions and separations, as well as from certain spectral fea- tures, Included in this handbook are survey spectra, strong line spectra and x-ray excited Auger spectra for most of the ele- ‘ments and some of their compounds, in addition to plots and tables of energy shift data which aid in the identification of chemical states.B. Principles of the Technique B. Principles of the Technique Surface analysis by XPS is accomplished by irradiating a sample with monoenergetic soft x-rays and analyzing the energy of the detected electrons. Mg Kat (1253.6 eV), Al Ket (1486.6 €¥), oF monochromatic Al Kar (1486.7 eV) x-rays are usually used, These photons have limited penetrating power in a solid fon the order of 1-10 micrometers. They interact with atoms in the surface region, causing. electrons to be emitted by the photoelectric effect. The emitted electrons have measured kinetic energies given by: KE =hv-BE- 6, @ where hv is the energy of the photon, BE is the binding energy of the atomic orbital from which the electron originates, and , is the spectrometer work function. ‘The binding energy may be regarded as the energy difference between the initial and final states after the photoelectron has left the atom, Because there is a variety of possible final states, of the ions from each type of atom, there is a corresponding variety of kinetic energies of the emitted electrons. Moreover, there is a different probability or cross-section for each final state. Relative binding energies and ionization cross-sections for an atom are shown schematically in Figure 1. The Fermi level corresponds to zero binding energy (by definition), and the depth beneath the Fermi level in the figure indicates the relative ‘energy of the ion remaining after electron emission, or the bind- ing energy of the electron. The line lengths indicate the relative probabilities of the various ionization processes. The p, d and f levels become split upon ionization, leading to vacancies in the ins Pats dha, dso, fe and fyo. The spin-orbit spitting ratio is 1:2 for p levels, 2:3 for d levels and 3:4 for f levels. As an example, the spin-orbit spitting of the Si 2p is shown in Figure 2 Bide ney (eV) Because each element has a unique set of binding energies, XPS. can be used to identify and determine the concentration of the elements in the surface, Variations in the elemental binding ‘energies (the chemical shifts) arise from differences in the 10 Handbook of X-ray Photoelectron Spectroscopy 20k Sr 1c on Figure 1. Relative binding energies and ionization crss-secions for U. The binding energy is proportional to the distance below the line indicating the Fermi leveh, and the ionization cross-section is proportional to the length of the lie, @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy B. Principles of the Technique i om om | 0-0 0-006 nm \ | en ees | Photon Photoelectron 2a e | NI | V4 | one Kerts | s [ Bidig Ey) hore g Figure 2. High-resolution spectrum of single-rytal Si showing the spincorbit splizing of the 2p level. ‘chemical potential and polarizability of compounds. These ‘chemical shifts can be used to identify the chemical state of the ‘materials being analyzed. In addition to photoelectrons emitted in the photoclectric Process, Auger electrons may be emitted because of relaxation Of the excited ions remaining after photoemission. This Auger electron emission occurs roughly 10° seconds after the Photoelectric event. The competing emission of a fluorescent x- ‘ay photon is a minor process in this energy range. In the Auger Process (Figure 3), an outer electron falls into the inner orbital vacancy, and a second electron is simultaneously emitted, carry- ing off the excess energy. The Auger electron possesses kinetic ‘energy equal to the difference between the energy of the initial jon and the doubly charged final ion, and is independent of the ‘mode of the initial ionization. Thus, photoionization normally leads to two emitted electrons — a photoelectron and an Auger electron. The sum of the kinetic energies of the electrons emitted cannot exceed the energy of the ionizing photons. Probabilities of electron interaction with matter far exceed those f the photons, so while the path length of the photons is of the ‘order of micrometers, that of the electrons is of the order of tens of angstroms. Thus, while ionization occurs to a depth of a few @ PHYSICAL ELECTRONICS v - eo Figure 3. The XPS emission process (top) for @ model atom. An incoming ‘Photon causes the ection of the photoelectron. The relaxation process (bot. fom) for @ model atom resulting in the emission of @ KL, electron. The simultaneous tworlecton coulombic rearrangement results in a final state with tvo electron vacancies. micrometers, only those electrons that originate within tens of angstroms below the solid surface can leave the surface ‘energy loss. These electrons which leave the surface without ‘energy loss produce the peaks in the spectra and are the most Useful. The electrons that undergo inelastic loss processes before ‘emerging form the background. Calculations of the inelastic ‘mean free paths of electrons in various materials are shown in Figure 4, i |C. Preparing and Mounting Samples ‘The electrons leaving the sample are detected by an electron spectrometer according to their kinetic energy. The analyzer is usually operated as an energy window, referred to as the pass energy, accepting only those electrons having an energy within the range ofthis window. To maintain a constant energy resolu- tion, the pass energy is fixed. Incoming electrons are adjusted to the pass energy before entering the energy analyzer. Scanning for different energies is accomplished by applying a variable electrostatic field before the analyzer. This retardation voltage may be varied from zer0 up to and beyond the photon energy. Electrons are detected as discrete events, and the number of electrons for a given detection time and energy is stored and displayed. C. Preparing and Mounting In the majority of XPS applications, sample preparation and ‘mounting are not critical. Typically, the sample is mechanically attached to the specimen mount, and analysis is begun with the sample in the as-received condition. Additional sample prepara- tion is discouraged in many cases because any preparation might modify the surface composition. For those samples where special preparation or mounting cannot be avoided, the follow- ing techniques are recommended. 1, Removing Volatile Material Ordinarily, volatile material is removed from the sample bbafore analysis. In exceptional cases, when the volatile layer is of interest, the sample may be cooled for analysis. The cooling must be to a sufficiently low ‘temperature to guarantee that the volatile element is not warmed to evaporation by any heat load that the analysis conditions may impart. 2 Handbook of X-ray Photoelectron Spectroscopy Figure 4. Calculated inelastic electron mean free paths in various meals from the method of S. Tanuma, C.J. Powell and DR. Peon, Surf Interface Anal 17,911 (1991), Samples Removal of unwanted volatile materials is usually ac- complished by long-term pumping in a separate vacuum system or by washing with a suitable solvent. Use fresh- ly distilled solvent to avoid contamination by high boil- ing point impurities within the solvent. Choice of the solvent can be critical. Hexane or other light hydrocar- bon solvents are probably least likely to alter the surface, providing the solvent properties are satisfactory. Samples ‘may also be washed efficiently in a Soxhlett extractor using a suitable solvent. 2, Removing Nonvolatile Organic Contaminants When the nature of an organic contaminant is not of in- terest_or when a contaminant obscures underlying material that is of interest, the contaminant may be removed with appropriate organic solvents. As with volatile materials, the choice of solvent can be critical. @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy 3. Surface Etching on sputter-etching or other erosion techniques, such as the use of an oxygen plasma on organic materials (see Section E.5.a(3), p. 27), may be used to remove surface contaminants. This technique is particularly useful when removing adventitious hydrocarbons from the sample or when the native oxides, formed by exposure to the at- mosphere, are not of interest. ‘Argon ion etching is commonly used to obtain informa- tion on composition as a function of the exposure time to ion etching. Calibration of the sputter rates can be used fo convert sputter time to information on depth into the specimen. Because sputtering may cause changes in the surface chemistry, identification of the changes in ‘chemical states with depth may not reflect the true com- position. 4. Abrasion ‘Abrasion of a surface can be done without significant contamination by using a laboratory wipe, a cork, a file or a knife blade. This may cause local heating, and reac- tion with environmental gases may occur (eg., oxidation in air and formation of nitrides in nitrogen). To prevent oxidation of more active materials, perform abrasion in an inert atmosphere such as a glove box. The abraded material should then be transferred to the ulir-high ‘vacuum (UHV) chamber in a sealed vessel to preserve the clean surface. 5. Fracturing and Scraping With proper equipment, many materials can be fractured or scraped within the test chamber under UHV condi- tions. While this obviates contamination by reaction with atmospheric gases, attention must be given to unex- Pected results which might occur. Fracturing might occur along the grain boundaries which may not be repre- sentative of the bulk material. Scraping can cover hard material with soft material when the sample is multi- phase. @ PHYSICAL ELECTRONICS C. Preparing and Mounting Samples 6. Grinding to Powder If spectra characteristic of bulk composition are desired, samples may be ground to a powder in a mortar. Protec. tion of the fresh surfaces from the atmosphere is re- quired. When grinding samples, localized high tempera- tures can be produced, so grinding should be done slow- ly to minimize heat-induced chemical changes at the newly created surfaces. The mortar should be well Cleaned before reuse. 7. Mounting Powders for Analysis ‘There are a number of methods which can be used to mount powders for analysis Pethaps the most widely used method is dusting the powder onto a polymer-based adhesive tape with a camel-hair brush. The powder mast be dusted across the surface carefully and lightly, with ‘no wiping strokes. Some researchers shun organic tape for UHV work, but others have successfully used certain types of tape in the 10" Torr range. Altemative methods for mounting powders include pressing the powder into indium or other soft foils, sup- Porting the powder on a metallic mesh, pressing the Powder into pellets or simply depositing the powder by ‘gravity. With the foil method, the powder is pressed be- tween two pieces of pure foil. The pieces are then separated, and one of them is mounted for analysis. Suc- cess with this technique has been varied. Sometimes bare foil remains exposed and, if the sample is an in- sulator, parts of the powder can charge differently. Dif- ferential charging can also be a problem when a metallic ‘mesh is used to support the powder. Ifa press is used to form the powder into a pellet of workable dimensions, a Dress with hard and extremely clean working surfaces should be used. Gravity can effectively hold some ‘materials in place, panicularly if a shallow well or depression is cut in the surface of the sample mount. Allowing a liquid suspension of the powder to dry on the specimen holder is an effective way of producing a 13D. Experimental Procedure uniform layer. With these methods, care must be taken in ‘pump-down to ensure that gas evolution does not distur Handbook of X-ray Photoelectron Spectroscopy the sample. A throttled roughing valve is especially ef- fective, D. Experimental Procedure 1, Technique for Obtaining Spectra {All spectra in this handbook were obtained using a PHI Model 5600 MultiTechnique system. A schematic diagram of the apparatus (Figure 5) illustrates the relationship of major components, including the electron ‘energy analyzer, the x-ray source, and the ion gun used for sputter-etching. The Mode! 10-360 Electron Energy ‘Analyzer incorporated into the 5600 is an SCA, and the inpat lens to the analyzer is an Omni Focus II lens. The excitation sources used were a Model 10-550 x-ray source with a Model 10-410 monochromator and a ‘Model 04-548 dual-anode source which was used with a ‘magnesium anode. All of the spectra in the handbook ‘were taken with the x-ray source operating at 400 W (15 KV - 27 mA). The specimens were analyzed at an electron take-off angle of 70°, measured with respect to the surface plane. The monochromatic x-ray source is lo- cated perpendicular to the analyzer axis, and the stand- ard x-ray source is located at 54.7" relative to the analyzer axis. In the PHI Model 5600 MultiTechnique system, energy distribution, energy fesolution and analysis area are all a funetion of the analyzer. For all of the spectra in this handbook, the spectrometer was operated in a standard mode. ‘The Omni Focus IMI lens was used to scan the spectrum while the SCA was operated at a constant pass energy. This resulted in constant resolution (AE) across the entire energy spectrum. The size of the analysis area ‘was defined by the aperture selection of the Omni Focus IIT lens. Analyzer energy resolution (AE/E) was deter- mined by the choice of pass energy and the selected “4 aperture. All of the spectra in this handbook were ob- tained using an 800 ym diameter analysis area Al of the spectra in this handbook were recorded and stored using the PHI ACCESS™ data system. The instru- ‘ment was calibrated daily, and the calibration was check- ced several times each day during data acquisition. The analyzer work function was determined assuming the binding energy of the Au 4m peak to be 84.0 eV. All survey spectra scans were taken at a pass energy of 58.7 eV. The narrow scans of strong lines were, in most ceases, just wide enough to encompass the peak(s) of in- terest and were obtained with a pass energy of 23.5 eV. ‘A lower pass energy may show more structure for some ‘materials. The narrow spectra were necessary to ac- ccurately determine the energy, shape and spin-orbit spit- ‘ting of the strong lines. On insulating samples, a high- resolution spectrum was taken of the adventitious hydrocarbon on the surface of the sample to use as a reference for charge correction. The generally accepted binding energy for adventitious carbon is 284.8 eV. ‘The samples analyzed to obtain the spectra in this hand- book are standard materials of known composition. Metal foils and polycrystalline materials with large sur- face areas were mechanically fastened to the specimen ‘mount. Powder samples were ground with a mortar and pestle to expose fresh surfaces and were dusted onto ad- hesive tape. Most elemental standards were sputter- etched immediately prior to analysis to remove surface ‘contamination. Most compounds, however, were ground or cleaved, and the freshly exposed surface was analyzed @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Figure 5. schematic diagram of the PHI Model $600 MuliTechnique sys- without etching in order to avoid possible changes is surface chemistry. Ne, Xe and Kr were implanted in graphite and Ar in silicon via ion implantation to un- ‘known concentrations prior to analysis. 2, Instrument Calibration To ensure the accuracy of the data presented in this handbook, the instrument used to obtain the data was calibrated regularly throughout the data-gathering process. The best way to check calibration, and the method used here, is to record suitable lines from a known, conducting specimen. Typically, the Au 4f or Cu 2p and 3p lines are used. The lines should be recorded with a narrow sweep width in the range of 5-10 eV, and D. Experimental Procedure 8 pass energy of 23.5 eV or less (corresponding to the pass energy normally used for high resolution scans) should be used, ‘There is general agreement on accurate values of Cu, Au and Ag standard line energies. The values in Table 1 are recommended for clean Au, Ag and Cu: Table 1. Reference Binding Energies (eV) AlKa Mg Ka Cusp 75.18, 75.13, Avan 83.98 86.00 ARMsn 368.25, 368.27 CuLsMM 56795, 33494 Cure 932.67 932.6 AEMANN 1128.78 898.5, from MP Seah Surf. Interface Anal. 14, 488 (1989) Because the 2pya and 3pyz photoelectron peak energies of Cu are widely separated in energy, measurement of these peak binding energies provides a quick and simple ‘means of checking the accuracy of the binding energy scale. Utilizing all of the above standard energies estab- lishes the linearity of the energy scale and its position, ice., the location of the Fermi level. 3. Programming Scans for an Unknown Sample For a typical XPS investigation where the surface com- position is unknown, a broad scan survey spectrum should be obtained first to identify the elements present, Once the elemental composition has been determined, narrower detailed scans of selected peaks can be used for a more comprehensive picture of the chemical com- position. This is the procedure that has been followed in ‘compiling data for this handbook, even though specimen ‘composition was known prior to analysis. a. Survey Scans. Most elements have major Photoelectron peaks below 1100 eV, and a scan range from 1100.0 eV binding energy is usually sufficient to 15EB Data Interpretation ‘identify all detectable elements. The spectra in this hand- book were recorded with a scan range of 1400-0 eV (Al excitation) or 1200-0 eV (Mg excitation) binding energy, In an unknown sample, if specific elements are suspected at low concentrations, their standard spectra should be consulted before programming the survey scan. If the strongest Line occurs above 1100 eV binding energy, the scan range can be modified accordingly. ‘An analyzer pass energy of 187 eV, in conjunction wi the appropriate aperture, is recommended for survey scans with the PHI Model 5600 MultiTechnique system. ‘These settings result in adequate resolution for elemental identification and produce very high signal intensities, minimizing data acquisition time and maximizing elemental detectability. b Detail Scans. For purposes of chemical state iden- tification, for quantitative analysis of minor components and for peak deconvolution or other mathematical ‘manipulations of the data, detail scans must be obtained for precise peak location and for accurate registration of line shapes. ‘There are some logical rules for this programming. (Z) Scans should be wide enough to encompass the background on both sides of the region of in- Handbook of X-ray Photoelectron Spectroscopy terest, yet with small enough step sizes to permit ‘determination of the exact peak position. Sufficient scanning must be done within the time limits of the analysis in order to obtain good counting statis- tics (2), Peaks from any species thought to be radia- tion-sensitive or wansient should be run first. Otherwise, any convenient order may be chosen, (3) No clear guidelines can be given on the maxi- ‘mum duration of data gathering on any one sample. It should be recognized, however, that chemical states have vastly. varying degrees of ‘adiation sensitivity and that for any one set of ir- radiation conditions, there exists for many samples condition beyond which it is impractical to at- tempt gathering data. (4) With the PHI Model 5600 MultiTechnique sys- tem, an analyzer pass energy of 23 eV is normally used for routine detail scans. Where higher energy resolution is needed, lower pass energies can be utilized. For example, the sputter-cleaned Si 2p on . 56, taken at 23 eV pass energy, can be compared to the chemically etched Si 2p shown in Figure 2 (pln. E. Data Interpretation 16 1. The Nature of the Spectrum a, General Features. The spectrum is displayed as a plot of the number of electrons versus electron binding ‘energy in a fixed, small energy interval. The position on the kinetic energy scale equal to the photon excitation energy minus the spectrometer work function cor- responds to a binding energy of O eV with reference to the Fermi level (Equation 1, p. 10). Therefore, a binding energy scale with 0 at that point and increasing to the left is customarily used. ‘The spectra in this handbook are typical for the various elements. The well-defined peaks are due to electrons @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy which have not suffered an inelastic energy loss emerg- ing from the sample. Electrons that have lost energy in- crease the evel of the background at binding energies higher than the peak energy. The background is con- tinuous because the energy loss processes are random and multiple. The background in the Mg Ko. induced spectra is larger than the background in the monochromated Al Ko. induced spectra because of ex- citation by Bremsstrahlung radiation of the non- ‘monochromated light. ‘The “noise” in the spectrum is not instrumental in origin bbut is the consequence of the collection of single electrons as counts randomly spaced in time. The stand- ard deviation for counts collected in any channel is equal to the square root of the counts so that the percent stand- ard deviation is 100/(counts)"2. The signal-to-noise ratio is then proportional to the square root of the counting time, The background level upon which the peak is su- perimposed is a characteristic of the specimen, the ex- Citation source and the transmission characteristics of the instrument, b. Types of Lines. Several types of peaks are observed in XPS spectra. Some are fundamental to the technique and are always observed. Others are dependent upon the exact physical and chemical nature of the sample, A third type is the result of instrumental effects. The fol- lowing describes the various spectral features that are likely to be encountered: (1) Photoelectron Lines. The most intense photoelectron lines are relatively symmetrical and are typically the narrowest lines observed in the spectra. Photoelectron lines of pure metals can, however, exhibit considerable asymmetry due to coupling with conduction electrons. Peak width is convolution of the natural line width (the lifetime of the “hole” resulting from the photoionization process), the width of the x-ray line which created the photelectron line and the in- @ PHYSICAL ELECTRONICS E. Data Interpretation strumental contribution to the observed line width, Less intense photoelectron lines at higher binding energies are usually wider by 1-4 eV than the lines at lower binding energies. All ofthe photoelectron lines of insulating solids are ofthe order of 05 eV wider than photoelectron lines of conductors. The approximate binding energies ofall photoelectron Tines detectable by Al or Mg radiation are cataloged in Appendices G and H. (2) Auger Lines. These are groups of lines in rather complex pattems. There are four main ‘Auger series observable in XPS. They are the KLL, LMM, MNN and NOO series, identified by specifying the initial and final vacancies in the ‘Auger transition. The KLL series, for example, in- cludes those processes with an initial vacancy in the K shell and final double vacancy in the L shel ‘The symbol V (eg., KVV) indicates thatthe final ‘vacancies are in valence levels. The KLL series has, theoretically, nine lines, and others have still ‘more. Because Auger lines have kinetic energies which are independent of the ionizing radiation, they appear on a binding energy plot to be in dif- ferent positions when ionizing photons of different energies (ie, different x-ray sources) are used. CCore-type Auger lines (with final vacancies deeper than the valence levels) usually have at least one component of intensity similar to the most intense photoelectron line. Positions of the more prominent Auger components are cataloged along. ‘with the photoelectron peaks in Appendices G and H (3) X-ray Satellites. The x-ray emission spectrum from a nonmonochromatic source used for iradia- tion exhibits not only the characteristic x-ray but also some minor x-ray components at higher photon energies. For each photoelectron peak that results from the routinely used Mg and Al Kat x-Data Interpretation ray photons, there is a family of minor peaks at lower binding energies, with intensity and spacing characteristic of the x-ray anode material, The pat- tem of such satellites for Mg and Al is shown in Table 2. A resultant spectrum using Mg x-rays is shown in Figure 6. Table 2 X-ray Satellite Energies and Intensities m2 as B Mg displacement eV 0 = 84 101176206487 relive height 100-80 4106S, 0s Al displacemeneV 0 988 201234697 miaive height 100 64-324 0306, A Binding Energy (¥) iG | Figure & Mg sera satelives observed in the C Is specrum of graphite (4) X-ray Ghost Lines. Occasionally, x-radiation from an element other than the x-ray source anode ‘material impinges upon the sample, resulting in small peaks corresponding to the most intense spectral peaks but displaced by a characteristic ‘energy interval. These lines may result from Mg impurity in the Al anode or vice versa, Cu from the anode base structure, oxidation of the anode, or ‘generation of x-ray photons in the Al foil x-ray ‘window. On occasion, such lines can originate via 18 TI | Handbook of X-ray Photoelectron Spectroscopy generation of x-rays within the sample itself. This last possibility is rare because the probability of x-ray emission is low relative to Auger electron emission. Nevertheless, such minor lines can be puzzling. Table 3 indicates where such peaks are ‘most likely to occur relative to the most intense photoelectron lines. Because such ghost lines rare- ly appear with nonmonochromatic x-ray sources ‘and are not possible with monochromatic x-ray sources, they should not be considered in line ‘identification until all other possi cluded. Table 3. Displacement of X-ray Ghost Lines (eV) Contminaing ‘Anode Materiat Radiation Mg Al © (Ka) 787 961.7 cuca 3239 3569 Mg (ka) = 230 Al(Ko) 30 — (5) Shake-Up Lines. Not all photoelectric proces- ses are simple ones which lead to the formation of ions in the ground state, but there is a finite prob- ability thatthe ion will be left in an excited state a few electron volts above the ground state. In this event, the kinetic energy of the emitted photoelectron is reduced, with the difference cor- responding to the energy difference between the ground state and the excited state. This results in the formation of a satellite peak a few electron volts lower in kinetic energy (higher in binding energy) than the main peak. For example, the char- acteristic shake-up line for carbon in aromatic compounds, a shake-up process involving the ener- ‘8y of the x —> x* transition, is shown in Figure 7. In some cases, most often with paramagnetic com- pounds, the intensity of the shake-up satellite may @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy E. Data Interpretation | — | Fa io Bini Bae) Figure 7. The x bond shake-up satelite for C Is in polysryene. The peak is ‘bout 67 eV higher than the main phowopeok approach that of the main line. More than one satelite of a principal photoelectron line can also be observed, as shown in Figure 8. The occurrence Cf such lines is sometimes also apparent in Auger spectral contours (Figure 9). The displacements and relative intensities of shake-up satellites can sometimes be useful in identifying the chemical state of an element, as discussed in Section E.3.d. (. 24). (6) Mubiplet Splitting. Emission of an electron from a core level of an atom that itself has a spin (anpaired electrons in valence levels) can create @ ‘vacancy in two or more ways. The coupling of the new unpaired electon left after photoemission from an stype orbital with other unpaired electrons in the atom can create an ion with several possible final stae configurations and as ‘many energies. This results in a photoelectron li which is split asymmetrically into several com- ponents similar to the one shown in Figure 10 Multiplet spliting also occurs in the ionization of P levels, but the result is more complex and subtle. In favorable cases, it results in an apparent slight (D PHYSICAL ELECTRONICS 7 Binding Enery (eV) Figure 8. Examples of shake-up lines (5) ofthe copper 2p observed in cop per compounds. increase in the spin doublet separation, evidenced in the separation of the 2pi2 and 2pan lines in first-row transition metals, and in the generation of 1 less easily noticed asymmetry in the line shape of the components. Often such effects on the p | doublet are obscured by shake-up lines. (7) Energy Loss Lines, With some materials, there is an enhanced probability for loss of a specific 19}. Data Interpretation Binding Energy (eV) Figure 9. Examples ofthe efecs of chemical states on Auger ine shapes in nickel compounds. 20 ‘amount of energy due to interaction between the Photoelectron and other electrons in the surface region of the sample (Figure 11). The energy loss phenomenon produces a distinct and rather sharp ‘hump 20-25 eV above the binding energy of the Parent line. Under certain conditions of spectral display, energy loss lines can cause confusion, Such phenomena in insulators are rarely sharper ‘than that shown in Figure 11 and are usually much ‘more muted. They are different in each solid ‘medium, With metals, the effect is often much more dramatic, as indicated by the loss lines for aluminum shown in Figure 12. Energy loss to the conduction electrons occurs in well-defined quanta characteristic of each metal. These plasmons arise from group tions of the conduction electrons. The photoelectron line, or the Auger line, is successively mirrored at intervals of higher binding energy with reduced intensity. The energy (fas names 129 Handbook of X-ray Photoelectron Spectroscopy Binding Enerty (V) Figure 10. Muliple splting ofthe Mtn 3s interval between the primary peak and the loss Peak jis called the plasmon energy. The so-called ‘bulk plasmons are the more prominent of these lines. A second series, the surface plasmons, exists at energy intervals determined approximately by dividing the bulk plasmon energy by the square Foot of two. The effect is not easily observed in ‘nonconductors, nor is it prominent in all conduc- tors. Plasmon lines are especially prominent in the Groups Ia and Ha metal spectra in this handbook. (8) Valence Lines and Bands. Lines of low inten- sity occur in the low binding energy region of the @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Binding Ener (V) Figure Il. Energy loss envelope from the OI line in Al, (sapphire). — | | | | I | | | t » } BAY 0 - no Binding Ener (€V) Figure 12. Surface (s) and bulk (b) plasmon lines associated withthe Al 2s ‘at normal and grazing take-off angles. spectrum between the Fermi level and 10-20 eV binding energy. These lines are produced by photoelectron emission from molecular orbitals and from solid state energy bands. Differences be- @ PHYSICAL ELECTRONICS E. Data Interpretation tween insulators and conductors are especially noted by the absence or presence of electrons from. conduction bands at the Fermi level. Valence bands may also be used to distinguish between materials where the core level XPS photoelectron lines are quite similar in shape and position. Ap- pendix D contains valence band spectra of several materials 2. Line Identification In general, interpretation of the XPS spectrum is most readily accomplished first by identifying the lines that are almost always present (specifically those of C and ©), then by identifying major tines and associated weaker lines, and lastly by identifying the remaining weak lines. Most modem, commercially available spectrometers have peak identification algorithms within their data reduction packages. Poor signal-to-noise of the data or database limitations may require manual iden- tification of some peaks. The following step-by-step pro- cedure simplifies the data interpretation task and mini- rizes data ambiguities. Step 1. The C Is, O 1s, C (KLL) and O (KLL) lines are usually prominent in any spectrum. Iden- tify these lines first along with all derived x-ray satellites and energy loss envelopes. Step 2. Identify other intense lines (Appendix J) present in the spectrum, then label any related satellites and other less intense spectral lines as- sociated with those clements. The energy positions of the less intense lines are noted in the line posi- tion table with the spectra. Keep in mind that some lines may be interfered with by more intense, overlapping lines from other elements. The most serious interferences by the C and O lines, for ex- ample, are Ru 3d by C 1s, V 2p and Sb 3d by O 1s, I (MNN) and Cr (LMM) by © (KLL), and Ru (MNN) by C (KLL).E. Data Interpretation Step 3. Identify any remaining minor lines. In doing this, assume they are the most intense lines of an un- known element. If not, they should already have been identified in the previous steps. Again, keep in mind possible line interferences. Small lines that seem uniden- tifiable can be ghost lines. Use Table 3 (p. 18) to check for the more intense parent photoelectron lines. Step 4. Check the conclusions by noting the spin doubtes for p, d and f lines. They should have the right separation (ct. spin orbit spiting for individual elements and Appendices G and H) and should be in the correct intensity ratio. The ratio for p lines should be about 1:2, 4 lines 2:3 and £ tines 3:4. P lines, especially 4p lines, may be less than 1:2. 3. Chemical State Identification ‘The identification of chemical states primarily depends ‘on the accurate determination of line energies. To deter- ‘mine line energies accurately, the voltage scale of the instsument must be precisely calibrated (cf. Section D2, P. 15), @ line with a narow sweep range must be recorded with good statistics (of the order of several thousand counts-per-channel above background), and ac- curate correction must be made for static charge if the sample is an insulator. a, Determining Static Charge on Insulators. During analysis, insulating samples tend to acquire a steady- state charge of as much as several volts, This steady- state charge is a balance between electron loss from the surface by emission and electron gain by conduction or by acquis vacuum. The steady-state charge, usually positive, can ized with an adjacent neutralizer or flood gun. Tis often advantageous to do this to reduce differential charging and sharpen the spectral lines, A setious problem is exactly determining the extent of charging. Any positive charging retards outgoing 2 Handbook of X-ray Photoelectron Spectroscopy electrons and tends to make the peaks appear at higher binding energies, whereas excessive charge compensa. tion can make the peaks shift to lower binding energies ‘The following are four methods which are usvally valid for charge correction on insulating samples: (1) Measurement of the position of the C 1s line from adventitious hydrocarbon nearly always Present on samples introduced from the laboratory environment or from the glove box. This line, on ‘unsputtered inert metals such as Au of Cu, appears at 284.8 eV, so any shift from this value can be taken as a measure of the static charge. At this time, it is not known whether a reproducible line position exists for C remaining on the surface after ion beam etching. (2) The use of an internal standard, such as a hydrocarbon moiety of a polymer sample. For the study of supported catalysts or similar materials, ‘one can adopt a suitable value for a constituent of the support and use that to interelate binding ener- ‘gies of different samples. One must be certain that ‘treatments of the various samples are not so dif- ferent that the inherent binding energies of support constituents are changed. (3) The use of a normally insulating sample so thin that it effectively does not insulate. This can be assumed if the spectrum of the underlying con- ductor appears in good intensity and if line posi- tions are not affected by changes in electron flux from the charge neutralizer. (4) For the study of insulating polymer films, binding energies of the C functional groups may also be determined by applying a small amount of Poly(dimethyl siloxane) solution (10% M) to the sample surface and charge reference to the Si 2p of the silicone (at about 102.1 eV). @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Some precautions should be kept in mind. If the sample is heterogeneous on even a micrometer scale, particles of different materials can be charged to different extents, and interpretation of the spectrum is complicated accord- ingly. One cannot physically mix a conducting standard like Au of graphite of micron dimensions with a powder and validly use the Au or graphite line in order to cor- rect for static charge. Differential charging can be mini- mized to a great extent by using a flood source of low- energy electrons. b. Photoelectron Line Chemical Shifts and Separa- tions. An important advantage of XPS is its ability to obtain information on chemical states from the variations in binding energies, or chemical shifts, of the photoelectron lines. While many attempts have been ‘made to calculate chemical shifts and absolute binding energies, the factors involved (especially in the solid state) are imperfectly understood, and one must rely on experimental data from standard materials. The tables ‘accompanying the spectra in this handbook record con- siderable data from the literature as well as data obtained specifically for this handbook. All literature data have been carefully evaluated to the instrumental calibration and static charge reference values given above and are, therefore, directly comparable. Because occasional line interferences do occur, it is sometimes necessary to use a line other than the most intense one in the spectrum. Chemical shifts of a minor Tine are within 0.2 eV of the chemical shift of the primary line. However, exceptional separations can ‘occur in paramagnetic materials because of multiplet spliting. Separations of photoelectron lines can be dete tables in Ap- © Auger Line Chemical Shifts and the Auger Parameter. Coretype Auger lines (transitions ending with double vacancies below the valence levels) usually have at least one component that is narrow and intense, @ PHYSICAL ELECTRONICS E. Data Interpretation often nearly as intense as the strongest photoelectron Tine (ef. spectra for F, Na, As, In, Te and Pb). There are four core Auger groups that can be generated by Mg or ‘Al xorays: the KLL (Na, Mg); the LMM (Cu, Za, Ga, Ge, As, Se); the MNN (Ag, Cd, In, Sn, Sb, Te, I, Xe, Cs, Ba); and NOO (Th, U). The MNN lines in the rare earths, while accessible, are very broad because of multi- plet splitting and shake-up phenomena with most of the compounds. Valence-type Auger lines (final states with vacancies in valence levels) — such as those for O and F (KLL); Mn, Fe, Co and Ni (LMM); and Ru, Rh and Pd (MINN) —.can be intense and are, therefore, also useful. Chemical shifts occur with Auger fines as well as with photoelectron lines. The chemical shifts are dif- ferent from those of the photoelectron lines, but they are fften more pronounced. This can be very useful for identifying chemical states, especially in combination with photoelectron chemical shift data. If data for the various chemical states of an element are plotted with the binding energy of the photoelectron line on the abscissa and the kinetic energy of the Auger line on the ‘ordinate, a two-dimensional chemical state plot can be ‘obtained. Such plots are in Appendix A for F, Na, Al, Si, S, Cu, Zn, As, Se, Ag, Ca, In, Sn and Te. With chemical states displayed in two dimensions, the ‘Auger parameter method becomes more powerful as a too! for identifying the chemical components than using photoelectron chemical shifts alone, In the format adopted for this handbook, the kinetic energy of the ‘Auger line is plotted against the binding energy of the photoelectron line, with the latter plotted in the -x direc- tion (Kinetic energy is still, implicitly, +x). The kinetic ‘energy of the Auger electron, referred to the Fermi level, is easily calculated by subtracting from the photon ener- gy the position of the Auger line on the binding energy scale With this arrangement, each diagonal line represents all values of equal sums of Auger kinetic energy andE. Data Interpretation photoelectron binding energy. The Auger parameter, a, is defined as, = KE4 - KEp = BEp - BE, (2) or as the difference in binding energy between the photoelectron and Auger lines. This difference can be accurately determined because static charge corrections cancel. With all kinetic and binding energies referenced to the Fermi level, and recalling that: KE=hv-BE ) KE, + BEp= hv +0 @ or the sum of the kinetic energy of the Auger line and the binding energy of the photoelectric line equals the ‘Auger parameter plus the photon energy. A plot showing ‘Auger kinetic energy versus photoelectron binding ener- gy then becomes independent of the photon energy. In general, polarizable materials, especially conductive ‘materials, have a high Auger parameter, while insulating compounds have a lower Auger parameter. 4. Chemical Information from Satellite Lines and Peak Shapes (1) Shake-up Lines. These satellite lines have tensities and separations from the parent Photoelectron line that are unique to each chemical state (Figure 8, p. 19). Some Auger lines also ex- hibit radical changes with chemical state that reflect these processes (Figure 9, p. 20). With tran- sition elements and rare earths, the absence of shake-up satellites is usually characteristic of the elemental or diamagnetic states. Prominent shake- 4p patterns typically occur with paramagnetic states. Table 4 is a guide to some expected Paramagnetic states Handbook of X-ray Photoelectron Spectroscopy Table 4. General Guide to Paramagnetie Species Malet sping and shake-up tne are generally expected inthe paramag- netic sates below: ‘Atomic No. Paramagnetic Sates Diamagnetic States 2 Ta Ta TV) 2 van, vat), av) vy 24 Cx), CHM), CIV), CAV) CV) 25 ‘MadtD, Moat, Mad), Mav) MacVIt) 6 Fe(u, Fett KuFe(CNs Fe(COMBr 2 Co(t), Coc) CoB, CoqNO2)sNHss, KaCO(CN)e, CofNF)sCls 28 Nip KANWCN), square plana complees » cu cu 2 Mo(l¥), Mocv) Mo(Vb, MoS3, KeMo(CN)s “4 Ru(H, Ru(l¥), Ru(V) Rot) a ‘gat gt 38 ect 7) 59-70 Pr, Nd, Sm, Eu, Gd, To, Dy, Er, Tm, Yb compounds ™ wa), Wwev) Woh, Woo, WOK, WC, KAWCCNDs 1s Re(i), Re(MD, Re(tV), Re(VID, ReOs Re(V), Re(¥D) % Ost, Os), Ox) x0, «vp, Ov n inv) am 2 vain, vavy uw (2) Multiplet Splitting. On occasion, the multiplet splitting phenomenon can also be helpful in iden- tifying chemical states. The 3s lines in the first series of transition metals, for example, exhibit separations characteristic of each paramagnetic chemical state. The 3s line, however, is weak and therefore is not often useful analytically. The 2p doublet separation is also affected by multiplet spliting, and the lines are more intense. The effect becomes very evident with Co compounds where the separation varies up to 1 eV. When first-row transition metal compounds are under study, it is @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy useful to accurately record these line separations and make comparisons with model compounds. (3) Auger Line Shape. Valence-type Auger transi- tions form final-state ions with vacancies in molecular orbitals. The distribution of the group of lines is strongly affected, therefore, by the nature ‘of the molecular orbitals in the different chemical states. Although little has yet been tabulated on this subject, the spectroscopist should bear in mind the possible utility of Auger line shapes. 4, Quantitative Analysis For many XPS investigations, itis important to deter- ‘mine the relative concentrations of the various con- stituents. Methods have been developed for quantifying the XPS measurement utilizing peak area and peak height sensitivity factors. The method which utilizes peak area sensitivity factors typically is the more ac- curate and is discussed below. This approach is satisfac- tory for quantitative work. For transition metal spectra With prominent shake-up lines, it is best to include the entire 2p region when measuring peak area. For a sample that is homogeneous in the analysis volume, the number of photoelectrons per second in @ specific spectra peak is given by: 1 = nfobyAaT ©) ‘where n is the number of atoms of the element per cm? of the sample, fis the x-ray flux in photons/cm*-sec, 6 is the photoelectric cross-section for the atomic orbital of interest in em?, @ is an angular efficiency factor for the instrumental arrangement based on the angle between the photon path and detected electron, y is the efficiency in the photoelectric process for formation of photoelectrons of the normal photoelectron energy, 2 is the mean free path of the photoelectrons in the sample, Ais the atea of the sample from which photoelectrons @ PHYSICAL ELECTRONICS E, Data Interpretation are detected, and T is the detection efficiency for electrons emitted from the sample. From Equation 5: n= UfobyAAT © ‘The denominator in Equation 6 can be defined as the atomic sensitivity factor, S. If we consider a strong line from each of two elements, then: in IWS m TS: a This expression may be used for all homogeneous samples if the ratio Sy/S2 is matrix-independent for all ‘materials. It is certainly true that such quantities as and A vary somewhat from material to material (espe- cially 2), but the ratio of each of the two quantities Gy/o2 and Aye remains nearly constant. Thus, for any spectrometer, it is possible to develop a set of relative values of S for all of the elements. Multiple sets of values may be necessary for instruments with multiple xray sources at different angles relative to the analyzer. ‘A general expression for determining the atom fraction of any constituent in a sample, Cs, can be written as an extension of Equation 7: Sarees LS: = Je = ms & Values of $ based on peak area measurements are indi- cated in Appendices E and F. The values of S in the appendices are based on empirical data (C.D. Wagner et al. Surf Interface Anal, 3, 211 (1981)) which have been corrected for the transmission function of the spectrometer. The values in the appendix are only valid for and should only be applied when the electron energy analyzer used has the transmission characteristics of the SCA supplied by Physical Electronics. An example ‘of the application of Equation & to analysis of aE. Data Interpretation Fis| fone neta Ee | o™St Pe ‘3 8 Binding Energy (¥) Figure 13. Quantitative anayss of potyttrafluoroethylene). sample of known composition, poly(tetrafluoroethylene), is shown in Figure 13 ‘The use of atomic sensitivity factors in the manner described will normally furnish semiquantitative results (within 10-20%), except in the following situations: The technique cannot be applied rigorously to heterogeneous samples. It can be useful with heterogeneous samples in measuring the relative number of atoms detected, but one must be conscious that the Iicroscopic character of the heterogeneous system in- ‘uences the quantitative results. Moreover, an overlying Contamination layer has the effect of diminishing the in- tensity of high binding energy peaks more than that of low binding energy peaks. 26 Handbook of X-ray Photoelectron Spectroscopy 'b. Transition metals, especially of the first series, have widely varying and low values of y, whereas y for the other elements is rather uniform at about 0.8 eV. Thus, 2 value of S determined on one chemical state for a transi. tion metal may not be valid for another chemical state This effect can be minimized by including shake-up peaks in the area measurement. When peak interferences occur, altemative lines must sometimes be used. The ratios of spin doublets (except 4p) are rather uniform, and the weaker of the pair can often be substituted. The spectra of the elements should bbe consulted, but caution must be exercised because the spectra of the elements themselves can be different from the spectra of their compounds. 4. Occasionally, an x-ray satellite from an intense Photoelectron line interferes with measurement of a ‘weak component. A mathematical approach can then be tused to subtract the x-ray satelite before the measure- ‘ment. For quantitative work, check the spectrometer operation frequently to ensure that analyzer response is constant ‘and optimum. A useful testis the recording of the three widely spaced spectral lines from Cu. Measurement of the peak height in counts-per-second should be made on 20-volt-wide scans of the 2py2 LMM Auger and 3p lines. Maintenance of such records makes it easy to notice if an instrument change occurs that would affect ‘quantitative analysis, 5. Determining Element Location @ Depth. There are four methods of obtaining informa- tion on the depth of an element in the sample. The first ‘two methods described below utilize the characteristics Of the spectrum itself but provide limited information. The third provides more detailed information but is tended by certain problems. The fourth utilizes measure~ ments at two or more electron escape angles. @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy (1) The presence or absence of an energy loss peak or envelope indicates whether the emitting atoms are in the bulk or at the surface. Because electrons from surface atoms do not traverse the bulk, peaks from the surface atoms are symmetrical above level baselines on both sides, and the energy loss peak is absent. For a homogeneous sample, peaks from all clements will have similar inelastic loss. structures. (2) Elements whose spectra exhibit photoelectron lines widely spaced in Kinetic energy can be ap- proximately located by noting the intensity ratio of the lines. In the energy range above approximately 100 e¥, electrons moving through a solid with lower kinetic energy are attenuated more strongly than those with higher kinetic energy. Thus, for a surface species, the low kinetic energy component will be relatively stronger than the high kinetic energy component, compared to that observed in the pure material. The data for homogeneous bulk solids can be compared with intensity ratios ob- served on unknowns to determine qualitatively the distribution of the element in the sample. Suitable ‘elements include Na and Mg (Is and 2s); Za, Ga, Ge and As (2piz and 34); and Cd, In, Sn, Sb, Te, 1, Cs and Ba Gps and 4d or 3dse and 44). When the element is in a bulk homogeneous layer beneath a thin contaminating layer, the charac- teristic intensity ratio is modified in the opposite direction. Thus, for a pair of lines from subsurface species, the low kinetic energy line will be at- tenuated more than the high kinetic energy line, distorting the characteristic intensity ratio. By ob- serving such intensity ratios and comparing them with the pure bulk elements, it is possible 10 deduce whether the observed lines are from predominantly surface-, subsurface- or homo- ‘geneously distributed material, @ PHYSICAL ELECTRONICS E. Data Interpretation (3) Depth profiling can be accomplished using controlled erosion of the surface by ion sputtering, Table 5 lists some data on sputter rates as a ‘general guide. One can use this technique on or- ‘ganic materials, but few data are available for calibration. Chemical states are often changed by the sputter technique, but useful information on elemental distribution can still be obtained ‘Table S. Relative Sputter Rates ot ¢ kV. Tangei____Sputer Rate Tas 1.00 si 090 Si03 08s PB 20 Go 140 Al 095 ra 410 Another useful method of controlled erosion, espe- cially of organic materials, is reaction with oxygen atoms from a plasma, This technique may also cchange the chemical states in the affected surface. Further, because the elements differ in their rates of reaction with oxygen atoms, the rate of removal of surface materials will be sample dependent. (4) In XPS studies, the sample-mounting angle is not usually critical, though it does have some ef- fect on the spectra. Very shallow electron take-off ‘angles accentuate the spectrum of any component segregated on the surface, whereas a sample mounted at an angle normal to the analyzer axis minimizes the contribution from such a com- ponent. This effect can be used to estimate the depth of layers on or in the surface. This effect is rot limited to flat surfaces, because angular de- pendence is even observed with powders, though the effects are muted. The spectrometer used to obtain the spectra presented in this handbook in-E. Data Interpretation tegrates the signal over only a narrow range of take-off angles. It is possible to change the angle between the plane of the sample surface and the angle of entrance to the analyzer. At 90° with respect to the surface plane, the signal from the bulk is maxi- ‘mized relative to that from the surface layer. At small angles, the signal from the surface becomes ‘greatly enhanced, relative to that from the bulk. ‘The location of an element can thus be deduced by noting how the magnitude of its spectral peaks changes with sample orientation in relation to those from other elements. The analysis depth may be estimated by d = Asin, where d is the analysis depth of the overlayer, 4 is the inelastic mean free path, and @ is the take-off angle of the analyzed electrons, Physical Electronics SCAs permit angle-dependent studies by simply varying the angle of the sample surface with respect to the input lens of the no % Binding Energy (eV) Figure 14. An example ofthe enhanced surface sensitivity achieved by vary {ing the electron tae-of angle. A thin oxide on silicon is enhanced atthe low take-off angle analyzer. The magnification of the lens determines the half-angle acceptance of the analyzer. An ex- ample of the information that can be gained through the use of this capability is shown in Fig. ‘ure 14, Data were obtained at normal (near 90°) and grazing (near 15°) take-off angles from a silicon sample with a thin silicon oxide overlayer. ‘The observed intensity ratio of oxidized to elemen- ‘tal Si is much greater at the low take-off angle. b. Surface Distribution. Many XPS systems have the capability to obtain data from areas as small as 30 yim in diameter using lens defined areas. Alternately, analysis areas of < 10 tm can be achieved with a scanning focused photo beam. These relatively high lateral resolu- ious allow for the acquisition of XPS maps which show both elemental and chemical state information. Insulating Domains on a Conductor, The occur- rence of steady-state charging of an insulator during analysis sometimes has. useful consequences. Micro- Seopic insulating domains on a conductor reach their ‘own steady-state charge, while the conductor remains at spectrometer potential. Thus, an element in the same chemical state in both phases will exhibit two peaks. Ifa change is made in the supply of low-energy electrons which stabilize the charge (as from the neutralizer ment) or if a bias is applied to the conductor, the spectral peaks from the insulating phase will move rela tive to those from the conducting phase. For such heterogeneous systems, this can be an extremely useful technique. t makes it possible to determine whether the elements that contribute to the overall spectrum are in the conducting phase, the insulating phase or both. @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy F. How to Use this Handbook 1. Qualitative Analysis Elemental and chemical identification of sample con- stituents can be performed by combining the information in the survey spectra with the binding energy tables of Appendices G, H and J. 1. Identify all major photoelectron peaks by using the line position tables in Appendix J. . Compare the elemental identifications with the elemental survey spectra to see that line positions and relative intensities are consistent. Also note the positions of the Auger electron peaks. «. Review Section E (pp. 16-28) to account for fine structures such as energy loss lines, shake-up peaks, satellite lines, ete, not identified in the handbook spectra or energy tables. 4. Identify any remaining peaks assuming they are in- tense photoelectron or Auger lines using Appendices G or H. . Chemical state identification can be determined from high resolution spectra of the strongest photoelectron and sharpest Auger lines. (Z) Correct binding energies for static charging of insulators. When applicable, charge reference the binding energy scale to the C 1s photoelectron peak at 286.8 eV. (2) Determine the chemical state from the @ PHYSICAL ELECTRONICS F. How to Use this Handbook gies by comparing the binding energy to the charts with the standard spectra and with the tabulated data in Appendix B. (3) As suggested above, much about the chemical state can be learned from the magnitude and posi- tion of shake-up lines as well as from the energy and shape of valence Auger lines. (4) For the elements F, Na, Al, Si, S, Cu, Zn, As, Se, Ag, Cd, In, Sn and Te, the Auger parameter tables in Appendix A may prove useful. The Auger line positions may be converted to kinetic energy ‘by subtracting from the photon energy (Al = 1486.6 eV, Mg = 1253.6 eV). Note the location of the points for Auger kinetic energy and photoelectron binding energy on the respective clemental plot. Proximity of the experimental points to those of recorded chemical states should be considered probable identification. Note that experimental error is much greater along the Auger parameter grid than normal to the grid lines. 2. Quantification The atomic sensitivity factors presented in Appendices E and F are applicable to the Physical Electronics Model 10-360 SCA and the Omni Focus III lens. A simplified expression to determine the atomic concentration of any clement is given by Equation 8 (p. 25). However, the accuracy is limited by the assumptions made in Section EA. (9.25)| Il. Standard XPS Spectra of the Elements |Standard Spectra of the Elements ‘This section ofthe handbook conteins survey spectra of 81 elements, high resolution spectra ofthe most wsful photoelectron lines, a chart of binding nergies for each of the observed photoelectron and major Auger electron peaks, anda photoelectron chemical state binding energy chart foreach of The clement, Used in combination withthe appendices the survey spectra aid in elemental identification, while the high-resolution spectra and binding energy data aid inthe idenification of chemical stares. Survey Spectra “The survey data include al ofthe lines which are normally useful. For most elements, the survey data were acquired with both a ‘monochromatic Al x-ray source and a nonmonochromatic Mg ray Source. When survey spectra for two compounds are presented, the ‘monochromatic source is used for both. The photon source foreach survey is noted on the survey. The photoelectron and Auger lines for the element of interest are identified. Lines which occur dve to other High-Resolution Spectra “The high-esolution spectra ofthe most useful photoelectron peaks are presented. Unless otherwise noted, the high-resolution data were ac- ‘ited sing the same photon source a the survey on the same page. ‘The binding energy of the main line is noted and when appropriate, the spin orbit seperation (A) is given. The lines from insulators, were charge-corected to adventitious hydrocarbon at 284.8 eV. clements are only designated by the elemental symbol, and x-ray Satellites and energy loss lines re not noted, For many elements, the ‘Auger peaks ae presented in expanded form ‘The ordinate islet undesignated, but the general contours and inten- sity ratios of the speaa are typical of measurements made using @ Physical Electonics Model 10-360 SCA with an Omni Focus es. ‘The spectra ofthe inert gas atoms implanted in graphite or silicon deserve special mention. The high-tesoluion data often show an asymmetric peak shape of a second resolvable peak when a single ‘Symmetric peak is expected. The intensity of the second, high binding nergy peak is dependent on the implantation energy and is ‘iminished at lower energies. The spectra are of inert gas atoms im planed a 4 RV. Photoelectron and Auger Electron Line Position Tables “The photoelectron and Auger line poston tables reflect the energies ofthe elemental peaks observed in this handbook, For oxidized or reduced species, the measured values may diferby a few electron vlts. Chemical State Binding Energy Tables ‘The binding energy tables have been constructed to reflect the general changes in binding energy with change in oxidation state or chemical fnvifonment. "A more extensive listing with specific binding energy ‘aloes for more than 1500 compounds is presented in Appendix B. @ PHYSICAL ELECTRONICS ‘Abbreviations inthe chemical state database ae as follows: aca acetylacetonate; metallocene = metal (CH) Bu = boty: Et ‘Me = methyl Ph= phenyl: OAe = acetateLithium Li Handbook of X-ray Photoelectron Spectroscopy Atomic Number 3 Lin LiF Monochromated Al Ko. 1400 1200 1000 300 600 400 200 0 Binding Energy (eV) Line Positions (eV) Photoclecton Lines Photoelecwon Lines Is 56 \ f ae, 7” oo ‘0 Binding Energy (eV)Lithium Atomic Number 3 | Liin LiF Mg Ka 1200 1000 800 600 400 200 0 Binding Energy (eV) 1s Binding Energy (€V) Compound Type _S4 55 56 31 1s=55.6 eV u LiBr = ict = _ 0 = oH Licos LisPOs = LiPo, = Pe ene Fy Lintos o Binding Eserey (V) @ PHYSICAL ELECTRONICSBeryllium Be Atomic Number 4 Handbook of X-ray Photoelectron Spectroscopy 1400 Monochromated Al Ka 1200 — Len 19 i370 Binding Enery (eV) “io 600 Binding Energy (eV) Is=111.8eV Line Positions (eV) 1 Kw | 1384 (ay ust te) is Tos Biading Ente (¥) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Beryllium B Atomic Number Binding Emery (¥ 600 400 200 0 1200 1000 800 Binding Energy (eV) 1s Binding Energy (eV) | Compound Type 123g S67 Is= 118 eV Be 20 BeMoo. BeRhaOs | Bek: | Nate = | \ NaBeFs bs is Binding Enerey() @ PHYSICAL ELECTRONICSa B Handbook of X-ray Photoelectron Spectroscopy Atomic Number 5 ‘Monochromated Al Ko. 137 a Binding Energy (¥) 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) Line Positions (eV) Is = 189.4eV is /\ ee Is | Ampeetipes | | | KUL 1310 (aD =| 1077 (Mg) 120 Binding Eneey (eV) 8 @ PHYSICAL ELECTRONICS‘Handbook of X-ray Photoelectron Spectroscopy Boron B Atomic Number 5 1200 1000 800 600 400 200 0 Binding Energy (eV) ' 1s Binding Energy (eV) | i Compound Type 186188190 __192_ 194 196 | A B Bovide BN BO) NaBFe s NaBH ' 80 NasBiOy+ 1040 1 i Bott 1. 190 Biing Encrey(¥) @ PHYSICAL ELECTRONICSCarbon c Handbook of X-ray Photoelectron Spectroscop: Atomic Number 6 Cas graphite eee Monochromated Al Ke ~ ve WN i \ | L. NW 1330 7200 Binding Energy (€V) 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) : is fl | Line Positions (eV) | ts=2845 ev + Prooelecron tines 1 | ‘Auger Lines | kw 123 «A 30M) ms Binding Energy () co @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Carbon Atomic Number Cas graphite Mg Ka 1000 —— Binding Ese (V) 1200 1000 800 600 400 200 Binding Energy (eV) ‘ Te Binding Energy €¥) f conpouttipe 200 m2 es 26 2h 202296 ee 2845 eV cate on oon cums cn ee Resor Aleydes ceo with C1 oa F 1 @ PHYSICAL ELECTRONICSNitrogen = N Handbook of X-ray Photoelectron Spectroscopy Atomic Number 7 Nin BN Monochromated Al Ka. | Binding Energy (6) 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) [ | Line Positions (eV) | Is= 398.1 eV | Putco Lins Mamie : | | 38 | | Augers | | es L_. _ | mm Op fa =e 4, Doles en aHandbook of X-ray Photoelectron Spectroscopy Nitrogen N Atomic Number 7 Is ow 190 30 Binding Ener (@¥) 1200 1000 800 600 400 200 0 . Binding Energy (eV) Is Binding Energy (eV) Compound Type 396 398 400402404 406 408410 1s =398.1 eV Nn Nivride BN SiN ' Cyanides Nitrites . ‘Ammonium Salt ‘Azide(N*NN*) ‘Azide (NNN) 7 Nitrates | Organic MatixOxygen oO Atomic Number Oin AlzOs (sapphire) ‘Monochromated Al Ker 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) | isesstoey Blncing Energy (eV) Line Positions (eV) Photoelectron Lines Photesecton Lines 1s a 331 2B Autti Kut: Kul —KLatay 1013 399 78 «ay 780 166 735 Oa)‘Handbook of X-ray Photoelectron Spectroscopy Oxygen oO Atomic Number 8 O in Al2Os (sapphire) Mg Ka 1200 1000 800 600 400 200 0 i Binding Energy (€V) | 1s Binding Energy (eV) Compound Type 528529530531 532_ 53354 eee ‘Meal Oxides FeO Si0s Hydroxides Phosphates Nivates | ‘Salfates Carbonates Choraes ALOs Silicones 1 335 Binding Encigy (6) @ PHYSICAL ELECTRONICS 45Fluorine F Atomic Number 9 Handbook of X-ray Photoelectron Spectroscopy Fin LiF ‘Monochromated Al Ka 1400 800 Binding Energy (eV) 600 400 200 0 Binding Energy (eV) 46 cy Binding Energy (eV) Line Positions (eV) Photoelectron Lines Peotoelecton Lines Is 2 685 30 ‘Auger Lines Kut, KLily KLyLa a7 358 832 (AD, ous 625 $99 Mg) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Fluorine Atomic Number 1s | Fin LiF {\ Mg Ka | A KUL Gis eS Dining Exe eV) 1200 1000 800 600 400 200 Binding Energy (eV) 1s Binding Energy (eV. [_ tame Is = 684.9 eV Compound Type 683684 __ 685 686687 _ 68869 KF LF = Nr Bar Mf AIF +340 NaBr, NaxSiFe Binding Energy (¥) F 9 47Neon Ne Atomic Number 10 Handbook of X-ray Photoelectron c Ne implanted in graphite — Monochromated Al Ke f ee | © Binding Energy eV) asc 1400 1200) 1000 300 7) a0 oa ‘Binding Energy (eV) r + | ieseutey { j Binding Energy (eV) Line Positions (eV)Le eee ae a i Ne fmpamed in gaie | Mg Ka | | | i Binding Ener (V) we 1200 1000 800 600 400 Binding Energy (eV) 1s Binding Energy (eV) Compound Type _ $61 62 303 364 Nein Ag = Nein Av = Nein Cu — Nein Fe = Ne in eopite = Is = 863.1 eV "1 as | Bing Energy ¥) @ PHYSICAL ELECTRONICSSodium Na Handbook of X-ray Photoelectron Spectrosco} Atomic Number 11 1400 1200 1000 800 ‘600 400 200 0 Binding Energy (eV) | Line Positions (eV) | | Photoelecuoa Lines | Phoweleewon Lines | 1s 2 2» or 6 31 | ‘eget Nips, | Kuyt Kun KtasLay 361 332 «aD 328 289 260 (ig) 085s 106s, Binding Ene e¥) 50 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Sodium Na Atomic Number 11 Nain NaCl | Monochromated Al Ka | 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) i 1s Binding Energy (eV) [ Compound Type _1070 107 or 107 Nain Nach ay | Is= 1072.1 eV Nat Nabe ect NF NaCO> NaxSi0s NasO1 NaiP:0> NaiPO: Mol Sieve ans i Binding Energy @ PHYSICAL ELECTRONICSMagnesium Mg Atomic Number 12 3) 750 Binding Energy (¥) 2 1400 1200 1000 800 600 400 200 0 Binding Energy (€V) 2p = 49.8 eV 2» 82 Binding Energy (¥) Line Positions (eV) Photoelectron Lines FRcaoelets Ls een es eee een ESRNEEERETEESTEN, Is 2 » 1303 » 50 ‘Auger Lines Ku, KLiLs KLnbn 38 347 30 (aD) 148 na 8 Mp) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Magnesium = Mg Atomic Number 12 Mg Ka | KUL a5 =a | PAT Bincog Bay (eV) Panos fom 2p 1200 1000 800 600 400 200 oO Binding Energy (eV) - 2p Binding Energy (eV) | Compound Type __ 48 49 50 SL 2p = 49.8 eV | i Me = | Mace _ MpBir = i MeFi = Mat08» — MgAhOs = | ee ry Binding Enery (V9 @ PHYSICAL ELECTRONICS \Aluminum Al Atomic Number 13 Handbook of X-ray Photoelectron Spectroscopy ‘Monochromated Al Ka 2 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) Binding Eneay (¥) Line Positions (eV) Photoelectron Lines 2 2» 18 a ‘sper times Las M419 «AD 1186 ts) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Aluminum lj Atomic Number 13} Mg Ko » 1200 1000 400 200 0 Binding Energy (eV) Compound Type nn om 2p Binding Energy (eV) 1316 n al AlAs. ml AIGaAS LAI Halides AIF Oxides Als, sapphire ALO, alpha ALO, gamma, [AIOOH, bochmite —s @ PHYSICAL ELECTRONICS Alin AO appt) — ap Nonothomscd AK \ 2p=744 eV as 75 ra Binding Enerey (eV)Silicon Si Handbook of X-ray Photoelectron Spectrosco Atomic Number 14 ‘Monochromated Al Ka. 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) Line Positions (eV) Binding Energy (¥) 56 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Silicon Si Atomic Number 14 1200 1000 800 600 400 200 0 | Binding Energy (eV) | 2p Binding Energy (eV) Siin iy Compound Type _ 98 101 104 Monoetromated Al Ka Siicides = 2p = 1033eV Sticon = carbides —_ ' cn | — | Sitiates Silica = ne 10 ” Binding Enerey (eV) | | | | | | @ PHYSICAL ELECTRONICS -|Phosphorus P Atomic Number 15 Handbook of X-ray Photoelectron Spectroscopy ‘Monochromated Al Ket 10 140, Binding Encrgy (eV) 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) P |) 220 | 2pxr= 129.9 eV i B40 10 30 120 Binding Energy (¥) Line Positions (eV) Photoelectron Lines Photoceewon Lines 23 2p 22 188 BE 30s Auger ines LaMaMan 1367 (aD 134 aM) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Phosphorus P Atomic Number 15 Mg Ka 2 a um 170 io iio Binding Er) 1200 1000 800 600 400 200 Binding Energy (eV) nding Energy (eV) 2p Binding Energy (eV) tne 129960 Compound ype 128 1291301113345, 2g 128 P Ped) _ 2ra—/ | InP | Phosphate om) Pyrophosphate = } Mecaporphte ; | PO = j | Pur = mips = tr0F0 ry Binding Ec () @ PHYSICAL ELECTRONICSSulfur s Handbook of X-ray Photoelectron Spectroscop, Atomic Number 16 Monochromated Al Ko. [ a ers 17 140 Binding Ese () 1400) 1200 1000 800 600 400 200 0 Binding Energy (eV) | Ti aon eH on | aetisev || semaine meme 2% pi - 2p ms 16s et 8 | ‘Auger Lines LyMaMay 1335 (an, J 1103 ag) ns 16s 155 Binding Energy (eV) 60 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Sulfur s Atomic Number 16 Tio Binding Eaerzy(€V) 1200 1000 800 600 400 200 Binding Energy (eV) 2px Binding Energy (eV) Compound Type 1601631651672 175178 2am = Ist {| 3 ' in| Sulfide ‘Sulfite = | Sotfae = Se = S02 = \ Thiophene 1 | Mercaptan | Cysteine = Sulfone = Binding Energy eV) @ PHYSICAL ELECTRONICS aChlorine cl Atomic Number 17 Handbook of X-ray Photoelectron Spectroscop a Kel Monochromated Al Ke. 2» Binding Energy (eV) 1400 1200 1000 800 600 400 200 ° Binding Energy (eV) 2px = 198.5 eV A=160eV a Binding Ente (V) Line Positions (eV) Phooclerron Lines 2% pin tpn ep m mm Ww 7 6 LMM 1304 (AD, tort (Mg) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Chlorine Atomic Number Binding Enea (eV) 1200 1000 800 600 400 200 Binding Energy (eV) cl a 2pya Binding Energy (eV) Compound Type _198 200 202204206208 210 2pur= 198.5 eV sev ‘Alkali Chloride = | cud, NiCl a Pact: KaleCle PUN -Cls Perchlorate KIO, NaClos CoH xCHs=CHCD Binding Everey (eV) (D PHYSICAL ELECTRONICSArgon Ar Atomic Number 18 Handbook of X-ray Photoelectron Spectroscopy Ar implanted in Si ‘Monochromated Al Ko. 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) 12ev Biading Energy (¥) Line Positions (eV) Photoetecron Lines 2% pi te 3s 30 hs AwperLings LaMaaMos 1272 (al) 1039 (Mg) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Argon Ar Atomic Number 18 si si ‘Ar implanted in Si s Mg Ka , 2%» a as 1200 1000 800 600 +400 200 0 Binding Energy (eV) 2py2 Binding Energy (eV) | Coorpound Type 240 241 2a = ‘AvinCo | Ariat = Avi graphite arin Si as 245 Binding Energy (eV) @ PHYSICAL ELECTRONICS 6sPotassium = K Handbook of X-ray Photoelectron Spectrosco} Atomic Number 19 Monochromated Al Ka Biadiag Energy eV) 1400 1200 1000 800 600 400 200 0 Binding Energy (¢V) Line Positions (eV) | 2px = 294.4 eV A=280ev Prsmn | 2a a 2 2 np 30 97 3s ‘Auger Lines Binding Energy (€V) 66 @ PHYSICAL ELECTRONICS‘Handbook of X-ray Photoelectron Spectroscopy Potassium =. K Atomic Number 19 2 Kin KCI Monochromated Al Ket 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) 2pan Binding Energy (eV) ‘Compound Type 2192293204295 Kinka 2pyn = 292.9 eV K — A=27ev Hialides KCN = KNO3 KCI; KCI0s KPO: KPO; 2pin 310 300 Binding Enry eV) K:Cn0> @ PHYSICAL ELECTRONICS orCalcium) = Ca Handbook of X-ray Photoelectron Spectroscop) ‘Atomic Number 20 ‘Monochromated Al Ka. ims 1200) om Bling Energy (€V) 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) | q - in e | 2psn = 346.7 eV Line Positions (eV) " Photoelectron Lines NS TSS i oe Uw Ss 8 sui =a a . __| ea 5 z x Binding Enerey (eV) 68 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Calcium Atomic Number ain CaCOs Monochromated Al Ke. 3s 1400 1200 1000 800 600 400 200 Binding Energy (eV) Ca 20 Compound Type 2pan Binding Energy (eV) 345, 346_347 3as_ 349 Ca cas acs CaF, C20 CaCO CalNOst: CaCrO. caMoot ©2804 aS» _ @ PHYSICAL ELECTRONICS Cain C2003 2pye = 346.6 eV | wadssev so 30 Binging Energy €V)Scandium Se Atomic Number 21 a0 7” Handbook of X-ray Photoelectron Spectroscoy Monochromated Al Ka { 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) Line Positions (eV) Photoelectron Lines % in Ima 9 dor sk Auger Lines MaMa LaMnMis('P) j 1149 cay 916 885 (Me) 390 Binding Ene (eV) @ PHYSICAL ELECTRONICSScandium = Se Handbook of X-ray Photoelectron Spectroscopy Atomic Number 21 0 Biading Enoay @V) ‘70 600 400 200 Binding Energy (eV) 1200 1000 800 2pyn Binding Energy (eV) i ee | 1] . x ". | Ses = I CiSe(CSHs)2 = | ‘Sc(CsHs (Calls) = | Binding Enrey @¥> @ PHYSICAL ELECTRONICSTitanium —s Ti Atomic Number 22 Handbook of X-ray Photoelectron Spectroscopy Monochromated Al Ka 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) a 40 Binding Energy (eV) n Line Positions (eV) Photoelectron Lines 2 pin 2a ap S61 4605355 Ave LMsMos—LaMesMas('P) 1098 1068 (AD, 365 835 (Mg) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Titanium = Ti Atomic Number 22 1200 1000 800 600 400 200 0 Binding Energy (eV) 2pxa Binding Energy (eV) oe Compound Type 453454 455_456_457_ 458459460, eens 7 TB: - | pia = 4588 eV 1 TN aesstev {| Tice a 1 0 . | no: j BaTiO; cubic a) ano; PoT0s SiTi0s Meualocene a Binding Enerey @V) @ PHYSICAL ELECTRONICS BVanadium V Atomic Number 23 Handbook of X-ray Photoelectron Spectroscopy Monochromated Al Ka 2px 2pyn = 512.2 eV A= 7654eV 35 "4 315 Binding Esrey (eV) Line Positions (eV) Photoelectron Lines % pn tn 7 20 $2 ese LaMaMn LaMnMis('P) LaMusMis 1038 ois om (aD a5 Tat 744 Og) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Vanadium = V Atomic Number 23 1200 1000 800 600 Binding Energy (eV) 2py2 Binding Energy (eV) Compound Type 512_513__SI4_S1S_S16_S17 318 v ve: vs . vite voc . ¥os0. Vanainte ENC Viscae)s = vores Metallocene @® PHYSICAL ELECTRONICS VinVi05 Monochromated Al Ke 2px | || 2p = 517.4 eV bev Binding Ener (eV 1sChromium Cr Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 24 Monochromated Al Kar 1400) 1200 1000 300 600 400 200 ° Binding Energy (eV) Line Positions (eV) Photoelectron Lines 2% tn mn kp 6 583 eS ‘Auger Lines LasMaMasLaMasMas('P) LaMusMas 97 959 917 «ab 764 76 64) 5 Biading Energy (¥) 6 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Chromium Cr Atomic Number 24 75 710 Binding Energy (€V) 1200 1000 800 600 Binding Energy (eV) 2paz Binding Energy (eV) rin Crs 2m /\ Compound Type s74__ 516578 _580_ S82 Monecbromaed Al Ke cr t ride CBs och Onide on ors ‘crooH Kcr KiCICN = Ce —_ * Binding Eery eV) 2psn = 576.9 eV @ PHYSICAL ELECTRONICSManganese Mn ‘Atomic Number 25 Handbook of X-ray Photoelectron Spectroscop: Monochromated Al Ka. 1400 1200 1000 400 7200 0 son Line Positions (eV) 2psn = 639.0 eV Psa |) 1.05 eV Photoelectron Lines % pe tn sp 196506) 2pia _ \ _/ eo Biadiag Esry (eV) B LasMaMas Mpg LsMasMs at ‘900 852 (AD m 667 619M) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Manganese Mn Atomic Number 25 Mg Ko 1200 1000 200 600 400 200 0 Binding Energy (eV) 2pvz Binding Energy (eV) | Moin MnO» Compound Type 638639 640_641_6A2_ 643644645, Monochromated Al Ka, Mas Mach, Maks gl Mao MnO) Mm0u MSO a ae = vec a fs we a ‘Binding Energy (eV) @ PHYSICAL ELECTRONICS 5Iron Fe Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 26 Monochromated Al Ke. 770 Binding Energy (eV) 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) - 1 2pxe = 707.0 eV A=13.10eV Line Positions (eV) | Photelecton Lines 2% in tp 38 ap es m0 To Photoelectron Lines ‘Auger Lines LMasMzyLaMniMas(1P)—LsMaMis 888 339 784 ab 655 606 Sst Me) Binding Energy eV) 80 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Tron Fe Atomic Number 26 1200 1000 800 Binding Energy (eV) 2pyz Binding Energy (eV) Compound Type _706_707_708_709_710_711 mm 13 Fe Fes Fes: (marks, py) Feth a Fech FO - f Fe0s q Foal FeSO K:FeICN 7 KiREICNs @ PHYSICAL ELECTRONICS [ene 2pin 2px0 = 710.9 eV a= 136eV 0 0 Binding Eserzy (eV) 81Cobalt Co Atomic Number 27 Handbook of X-ray Photoelectron Spectroscopy ‘Monochromated Al Ket LoS ( 5 Tio s Dining Ear (V) Law 2” * ra 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) [ Line Positions (€V) —m me ee a= lao7ev | 2% tpn tpn ap | ms 3 Tm 10 | | Avgertioes 0 2pm | Lis MaMa Laas) a8 or mab | os By shat _ ~ LaMaMas CP) LaMesMs((P)—LaMasMis ™ 713 68 «Ay 538 0 45 Op) 82 Binding Energy (¥) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Cobalt Co Atomic Number 27 1200 1000 800 400 200 0 Binding Energy (eV) 2pya Binding Energy (€V) oinCoo Compgundype 78719 7H0_7a1_7e2_7H3_704 Menochonaed Al Ka co [ on ™ azimecy cots — Coo . 2pin coro Cons pene e008 Cx0H: - cao - Catsichs = En Binney) @ PHYSICAL ELECTRONICSNickel Ni Atomic Number 28 Handbook of X-ray Photoelectron Spectroscopy Monochromated Al Kat 1200 1000 800 600 400 200 0 Binding Energy (eV) 2psn = 852.7 eV 7.21 eV 6s Binding Enry (eV) Line Positions (eV) Photoelectron Lines 2% pin mma 8p 1009 70853 wer Lines MyM LaMpMzy_LaMnsMas('P) 78 ™ 12 545 339 49 LsMaaMas CP) L2MasMus('P)— LaMysMas 706 Gat 4 (AD 50 3 408, 391 Me) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Nickel Ni Atomic Number 28 2 Binding Enry (eV) 1200 1000 600 Binding Energy (eV) 2pya Binding Energy (eV) 852, 853 s4 855, 856 _ 457 858, Ni Silicdes Nis Hatides Nio Nis Nios Nilacae) Ni(@Acre 44:0 ilgili) PHYSICAL ELECTRONICS Binding Enersy ()Copper Cu Handbook of X-ray Photoelectron Spectroscop Atomic Number 29 "en ee Monochromard Al Ka | —~ \ | a yw j l ~ —— a a ef Diane 9 » a, 14990 F000 ooo woo a oo 0 Binding Energy (eV) | saa7ev Line Positions (€V) Bown 9227 «1 2p | | Photoelectron Lines mipabe Phtoeleom ins 2% tm 2 Jpn Spe oor ESS He ‘Auer Lins LaMaiMay—LyMpsMas ('P) 712 oi (AN) 479 415 (Me) LaMasMis CP) LaMasMas (PF) LaMisMis—LaMsMis 640 028 568 a) 407 3 335 Biading Energy (eV) *8 ote 86 PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Copper Cu Atomic Number 29 1000 600 400 200 Binding Energy (eV) 2pye Binding Energy (eV) so) 932933, 934_ 935 936 |_Compqund Type co cus cus. cut cock, Cu0 C0 cuoms cus0y Cuore Cu(sacpaldoxime) @ PHYSICAL ELECTRONICS Cain C20 ‘Monochromated Al Ka. 2psn = 933.6 eV 9.9 eV Binding Energy €¥)Zinc Zn Atomic Number 30 Handbook of X-ray Photoelectron Spectroscopy ‘Monochromated Al Ket 2. 2m ee Biading Emery (eV) a=2297eV 2pin f op ne | a Sa Line Positions (eV) % 2 2 3% pe Yen 1195 1045 022 i491 810 Auger Lines LaMaMay—LaMpMzLsMn Mas (P) 6 652 582 (AD an 419 39 OR) LsMayMas CP) LaMasMus('P)LaMasMasLaMasMus 37 359 495 4am (AD 340 326 262 29 Mp) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Zine Zn Atomic Number 30 Binding Enerey(V) 1200 1000 800 600 400 200 Binding Energy (eV) 2pu2 Binding Energy (eV) Compound Type ox _1021_1022_1023,_1024 7 7 | as . | | | | 2paa = 1021.8 eV A=2s7eV Phosphide = ales 20 ‘Anaceche = (MeN: 2aB4 = I\ 280 2nuSiOxOH: = 24:0 2acr04 ‘ZnRh:Os 1060, Binding Enerey (eV) @ PHYSICAL ELECTRONICSGallium Ga Handbook of X-ray Photoelectron Spectroscopy Atomic Number 31 2p Monochromated Al Ket Lam IK VY | wA o = 10 ing ey 3 1400 1200 1000 800 600 400 200 0 Binding Energy (€V) Line Positions (eV) 2pyy= 11167 &V | ~ ae zeseev Photnecton Lines | 2 2p pen 38 Spin Spr i oom i itor Ie 18 2p12| m= LoMaMax— LaMzsMay—LaMnsMes('P) 397 389 si (AD Nh 364 356 281 gy J \ \ Pm Listas?) LMaMs(P) Miss LaMass L Sot 487 419 2 (AD m 254 186 159 Og) Bioding Eoey (V) 0 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Atomic Number 31 185 Binding Esergy () 1200 1000 800 600 400 200 0 Binding Energy (eV) 2pv2 Binding Energy (eV) Compound Type 16 m7 im ca — car Gx0s 3d Binding Energy (eV) Compound pe _18 9 2 2 Ce — Gans or ‘icaas Geos Binding Ey) @ PHYSICAL ELECTRONICS onGermanium Atomic Number Ge 32 Handbook of X-ray Photoelectron Spectrascopy 1400 1200 1000 600 400 200 0 Binding Energy (eV) 92 3d=29.4 eV Binding Enezy (eV) 20 Line Positions (eV) Photoelectron Lines an mm 8 don dem na 1217 isl 126 8 ‘Auger Lines LaMaMzyL:MasMz3—LMasMas('P) su 325, 44 (AD 300 22 2M (Mg) LaMaMis CP) LaMnMis('P) LaMaMis—LaMasMis 23, 412 32 310 «aD, 200 19 109 7 Ms) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Germanium Atomic Number Ge 32 Binding Energy (eV) 34 Binding Energy (eV) Compound Type 2» 31s EE Ge a eas OeSiTeAs: GeSsAs = Gere: ee - Geses Z Gese Sulfides = GeO: = Binding Eoey V1 @ PHYSICAL ELECTRONICS 93Arsenic AS Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 33 1400 1200 1000 800 600 400 200 0 | Binding Energy (eV) Baye = 41.6 eV Line Positions (eV) A= 0.690V { 3d J\ Photoeteczon Lines 3dso { eS | pin pn 38 Bein Boar Hy go B92 205 46a ‘Auger Lines LaMaMis (PY LaMMas CP) on 360 (AD 262 . | LiMasMas('P) LyMasMys LM 336 Binding Energy (V) @ PHYSICAL ELECTRONICSHandbook of X. ray Photoelectron Spectroscopy Arsenic As Atomic Number 33 MMN- tA Mz Ka Toon 300 600 400 200 0 Binding Energy (eV) Compound Type 3dgq Binding Energy (€V) | Bn=416eV 4 3g 4 2 8 4 6 6 8-069 ev {\*“ as AlAs AIGaAS GaAs nas Sulfides Ash AsBry AsO. Ass \ : 3dn | | F 5 | lel . Binding Energy (@¥) (D PHYSICAL ELECTRONICS coSelenium ‘Atomic Number Se u Handbook of X-ray Photoclectron Spectroscopy Monochromated Al Ka [ LMM __/) 210 \ Wh 1400 1200 1000 800 600 400 200 ° Binding Energy (eV) Line Positions (eV) f\3ase asaasey j\ Potekston Lines nn te Se Sen mm 18 Te ST Avge Lies \ | 5 LyMasMgs ('P) LaMaaMys (P) Ey aT (AD LaMasMas ('P)—LaMusMas. LaMasMas 35 is 10 «aD 3 6 ining Ey 1) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Selenium eset Atomic Number 34 Mg Ka bp 1200 1000 800 600 400 200 0 Binding Energy (eV) 3dso Binding Energy (€V) 3s = 5560V Compound Type S4__$5 56S. Bn 086eV Se Asse. GaSe, Gese = = 3dse | 3dve Snide so -_ mero, = toca came (cacooHSc0 = “35 Binding Enerty @¥) © PHYSICAL ELECTRONICS 0Bromine — Br Atomic Number 35 Handbook of X-ray Photoelectron Spectroscopy Brin KBr ‘Monochromated Al Ker 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) 3dr Line Positions (eV) Photoelecton Lines 3s pin Sosa Maa Ms tsa 2 189 1S Awgecties MaMasNn 1386 (AD, 153 (Me) @ PHYSICAL ELECTRONICSHandbook of X- Bromine Br Atomic Number 35 Br in KBr Mg Ka MMN aM 3 3 1200 1000 Binding Energy (eV) Compound Type 6a 3s Binding Energy (eV) ° csr Ree KBr NaBr Br CuBr Br NigNH)Bre PUNH)Br2 = K:PiBe K:PiBre @ PHYSICAL ELECTRONICS 3dyn = 68.8 eV A=10seV Biading Energy (€V)Krypton Kr ‘Atomic Number 36 Handbook of X-ray Photoelectron Spectroscopy Kr implanted in graphite ‘Monochromated Al Ka 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) Bioding Easy (€V) 100 Photoelectron Lines 3st Spin Spe Me Mn sp 27 216 08 S28 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Krypton = Kr Atomic Number 36 1200 1000 a a ° Binding Energy (eV) dun Binding Energy (@V) 3dyn = 87.0 eV eal % $8 delay Boe | @ PHYSICAL ELECTRONICS Binding Energy (¥) 101Rubidium Rb Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 37 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) | Line Positions (eV) | 3dyq= 1115 ev j | A= 1aev | Photelecton Lines | | 3 Jpn Jem Mie Myo ts dp ! mM MO M6 a [fsa a MpMasN2y a 1385 152 bs 102 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Rubidium = Rb Atomic Number 37 Rb in RCI Monochromated Al Ka 1400 1200 1000 800 600 400 Binding Energy (eV) 200 3dye Binding Energy Compound Type 109 i) Rb REN: RbBr Roc ROE RbPOL RbP.Or ROL = RbCIO, [el @ PHYSICAL ELECTRONICS Rb in RCI 3dr = 109.9 eV A= L4sev ns Binding Energy (¥) 103Strontium Sr Handbook of X-ray Photoelectron Spectroscopy Atomic Number 38 Monochromated Al Kot 1400 1200 1000 800 ‘600 400 200 0 Binding Energy (eV) | Line Positions (¢V) 3dga = 13433 eV arinev | Photoelectron Lines | 3 pin Sexe Mar Baz dsp 3028203638392 Binding Energy (@V) 104 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Strontium Sr Atomic Number 38 1200 1000 800 600 400 200 0 Binding Energy (eV) 3dse Binding Energy (eV) Compoand Type _ 133 134 135 136 Se = | so — sits sico, — | $3804 — i SaNOse = i \ | SiMoOs mm \ | 190 140 _ | Binding Energy (eV) | @ PHYSICAL ELECTRONICS 105Yttrium = Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 39 Monochromated Al Ker se 1395 1360 nas Binding Eneray (eV) ” 1400 1200 1000 +800 600 400 200 ° Binding Energy (eV) 10 106 ] Line Positions (€V) 05 6V 3a | | | Potton Lins 3dsa = 156.0 eV a 3a f\ || 3% nn ean Mie Mgnt I 34 HL 299158156 aS /\ | re J V | Maso | 1356 (aD) 123 (Ma) 160 150 Bining Energy eV) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Yttrium y Atomic Number 39 Besa as Binding Energy (eV) *| 1200 1000 800 600 400 200 0 Binding Energy (eV) a “iain Ener oar | ernie Reais wee Mess | ; Y203 = 170 ” 10 Binding Energy eV @ PHYSICAL ELECTRONICS 107Zirconium = Zr Atomic Number 40 Handbook of X-ray Photoelectron Spectroscopy ‘Monochromated Al Ko. 1400 1200 1000 800 600 400 7200 ol Binding Energy (eV) r \ se Posliom @V) 3dgn = 178.9 eV 352) Line Positions (eV) as20ev rr Binding Enerey (eV) 108 170 Photoelectron Lines 3s 3a Jpn Mn Men dsp 0 M3 MO Isl I sk Augers MisNasN2s— MasNnsV MusNasNas 1393 1368 137 (AD 116 1135 110s (Mg) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Zirconium = Zr Atomic Number 40 1200) 1000 800 600 400 200 ° Binding Energy (eV) | 34a Binding Energy (eV) 3dsp = 178.9 eV 3dsp f Compand Nye 178179 180181182183 _m_s sg = 178 1 I| x 1 I 20: = i | | Fs = | ka, = | Kan, | ka Ho a | 10 100 Binding Enrey () | @ PHYSICAL ELECTRONICS 109 |Niobium Nb Atomic Number 41 Handbook of X-ray Photoelectron Spectroscopy so Monochromated AL Kot | ~~ ———- | anv a | Bye a Seva 3p MNN a ” 4s 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) 215, 205 195 Binding Enezy (eV) 110 Line Positions (eV) hotoceciron Lines 3s Jpn Jpn Mm Sdn dsp 47376361205 202553 ‘Auger Lines MsNnv Mav 119 1387 (AD 1096 1054 Oe @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Niobium Nb Atomic Number 41 1200 1000 800 600 400 200 0 Binding Energy (eV) 3dsa Binding Energy (eV) Compound Type _201_202__203 204205 206 207208, Nb = =, = ae Nb:Os a me eet = CasNbOr a Brahh Budd) a | Chidbc2KPrPe gl _ (Cab }MesSO1 wl 215 205 Binding Ener ¥) @ PHYSICAL ELECTRONICS mMolybdenum Mo Atomic Number 2 Handbook of X-ray Photoelectron Spectroscopy Monochromated Al Kot 1310 3a 280 ‘Binding Enery (eV) Save Spa “ 12 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) Line Positions (eV) 3dyz = 228.0 eV a=3.13eV Phoucecon Lines 3 Spe Sean Man Msn asp 505 412 JBL SHH ‘Auger Lines MasNnv MasvV 1299 inet (aD 1066 1031 Mg) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Molybdenum Mo Atomic Number 42 Mao 108 isting Emery V) a *” 1200 1000 800 600 “400 200 ° Binding Energy (eV) sz Binding Energy (eV) ] Compound Type 226227228229 230231232233, Faas 3dsa || | | Mo Boride a | Mot = | Mocts = Mocs = Mocs = | MoO: }\ 4 MoO; = | aw (xthsoos ee (COMMoPHP = s — a oe Easy @¥) @ PHYSICAL ELECTRONICS 3Ruthenium Ru Atomic Number 44 Handbook of X-ray Photoelectron Spectroscop: Monochromated Al Ka 1400 1200 1000 800 ‘600 “400 200 0 Binding Energy (€V) 3dsq = 280.1 eV 3dsa)} azdiTev \ Binding Energy (eV) 4 Line Positions (eV) Photoelecwon Lines 3 Jn Jom Ma My 4 dp 5a6 488462 28k HOTS ‘Augec Lines MgNsv | MaVV 1256 1212 (aD 1023 719g) @ PHYSICAL ELECTRONIC!Handbook of X-ray Photoelectron Spectroscopy m Ru Atomic Number 44 1200 7000 300 0 00 200 0 Binding Energy (eV) 3dsa Binding Energy (@V) : Compete 216 27728780 81_3e2_am 3g = 20.1 eV ay a3 aL | = CU | - : _ VL a pr 20 ~ ‘780 Bing Ene) ® PHYSICAL ELECTRONICS 1sRhodium =Rh Atomic Number 45 Handbook of X-ray Photoelectron Spectroscopy ‘Monochromated Al Ka. [~~ Mv | / | 7 \ | i lading Energy) a” 1400 1200 1000 800 600 400 200 o ‘Binding Energy (eV) | | Line Poston (eV) 3dsq = 307.2 eV. 3d {| aev i j 30 Blodng Esery (V) 6 Photeleon Lines Spe Mae Sue sa 3 pn ar oT 8a 321 MisNs¥ | MisVV 1234 igs (AD toot 952 Me) Po @ PHYSICAL ELECTRONICS eTHandbook of X-ray Photoelectron Spectroscopy Rhodium = Rh Atomic Number 45 1200 1000 600 Binding Energy (eV) 3dye Binding Energy (eV) Compound Type 3073083093103 Rh ! Halides Rh CIRYPHPs CBRNHP)s CLRHPP), BrsRIMP Ps ClRe¢cyclooctadiene): RhyQAek + 2:0 RW(NH:CH:COO) + H:0 ™ @ PHYSICAL ELECTRONICS 3den = 307.2 eV a=amev 3dua /\ 30 Binding Energy eV) 47Palladium Pd Atomic Number 46 Handbook of X-ray Photoelectron Spectroscopy ‘Monochromated Al Ko Bay: Ar ‘ os A 1400 1200 1000 300 600 400 200 0 Binding Energy (eV) f OO | Line Positions (eV) Bdyq = 335.1 eV | 8=S26ev 118 Binding Energy (€¥) Phowelecton Lines 3 Jpn 3p Ma Msn 4 Mp on 5 S33 33S SD ‘Auger Lines MasNsV | MV wait 11s9 (aD 8 926 (Me) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Palladium Pd Atomic Number 46 ms Binding Energy (V) 310 So 1000 800 Binding Energy (eV) 3p Binding Energy (eV) Compound Type 335_336_ 33733833940 El mi = Pes Pasi om ides 0 0: xc wea a POAC» al Ps @ PHYSICAL ELECTRONICS Binding Energy (eV) 9Silver Ag Atomic Number 47 Handbook of X-ray Photoelectron Spectroscopy Monochromated Al Ke. 1400 1200 1000 800 600 3dsp = 368.3 eV 3ds0 | A=600eV Binding Ener €¥) 120 dive Binding Energy (6) Binding Energy (eV) Line Positions (eV) Photoelectron Lines i so om in in otek cds acco SE ‘Auger Lines MisNisv Mv Mav isi 13s 129° (ab 958 902 896 (Mg) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Silver Ag ‘Atomic Number 47 ne ww «fC | oJ VY \ a Binding Energy €¥) 1200 600 400 200 Binding Energy (eV) ‘Compound Type 3dso Binding Energy (€V) 367 368, 369 3dsp = 368.3 eV =600eV a Alloys Ags Aal AF Aah Oxides Ags sulfate AgOOCCS Ag(OAe) Py ” Binding Energy (V) @ PHYSICAL ELECTRONICS 124Cadmium Cd ‘Atomic Number | 48 Handbook of X-ray Photoelectron Spectroscopy ‘Monochromated Al Ket 2 4 ts 4p 1400 1200 1000 800 600 on aan ; Binding Energy (eV) Line Positions (eV | 3ds2 = 405.1 eV 3dsa || ine Positions (eV) As674eV || Binding Emery (eV) 12 Photoelectron Lines 3 jn Spe in Mn ts apd m 62 68 412 45 mo ‘Auger Lines MsNesNis— MaNasNas | 1110 1103 (AD, 877 870 (Ms) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Cadmium Ca Atomic Number 48 | 1200 1000 800 Binding Energy (eV) 600 3dsn Binding Energy (eV) 407 cs HporCdoTe cate Case cas Halides C40, C202 can: aco ‘Compound Type _ 404 405 406 @ PHYSICAL ELECTRONICS Binding Energy (eV) 123Indium In Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 49 Monochromated Al Ka Ma 7 1400 1200 1000 800, 600 400 200 oO Sining Ener eV) | | r Lin Pons) a= 40967 a 2 | | aetstev \ | Photoelectron Lines 3s Jpn Spe Bése Mn | | ian f l| oS BS woo ‘Auge Lines MsNasNes MaNsNas 1084 1076 (AD | 851 883 Og) I 435 Binding Ene (e¥) 124 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Indium In Atomic Number 49 MN 1200 1000 800 600 400 200 o Binding Energy (eV) $3dso Binding Energy (eV) Compound Type 43 ws ass 47 to ns he a Trees cs ma m0 = 10H) = Tinacac)s BrInELN BranPun Binding Enrty (ev) @ PHYSICAL ELECTRONICS 1s eeeTin Sn Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 50 ‘Monochromated Al Ka. sn “ a* 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) | Line Positions (¢V) Mey | actaev | Potrecon Lies | 3ésa fl | wn tn Me Ma & | I | MP ORS Jes eo | ope Lins | Mings — MiNgNs y Toss (08 «an ee a 5 318 oD so a ining ey 9 oe @ PHYSICAL ELECTRONICS eeeHandbook of X-ray Photoelectron Spectroscopy Tin Sn | Atomic Number 50 | | 1200 1000 800 600 400 200 0 Binding Energy (eV) 1 3dgq Binding Energy (eV) | Compound Type a as cli | Mp iesoey Ass4leV ‘sa ses - aos 10 — ‘Say a Nasi) sa Phssn (lide) Messer Mesos SEs si Binding Energy (@¥) | @ PHYSICAL ELECTRONICS 127 |Antimony Sb ‘Atomic Number 51 ‘Monochromated Al Ko. Handbook of X-ray Photoelectron Spectroscopy 1400 1200 1000 800 600 400 200 ° Binding Energy (eV) | Line Positions (eV) | Bdan = 528.3 eV 3dse | re \ 128 nf Bincing Enemy (eV) | otoelecron Lines 3s pin fps Mh Mans | a RE OS ei ‘Auger Lines MaNasNas— MaNNas 1032 1022 (AD 9 789 (Me) (D PHYSICAL ELECTRONICS eT‘Handbook of X-ray Photoelectron Spectroscopy Antimony Atomic Number 1200 1000 ‘800 600 400 200 0 Binding Energy (eV) ‘3dsn Binding Energy (eV) pe eRe War coe alate eee 5 AIS |_| Sulfides = Halides Ld SS 7” | Bal = KSbFs = al ea —_ ms . |* a | supesissey Binding Energy (¥) Sb 51 @ PHYSICAL ELECTRONICS 129Tellurium Te Handbook of X-ray Photoelectron Spectroscopy Atomic Namber 52 Monochromated Al Ket EAR | i is Bing Eee (9) MINN 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) | Line Positions (eV) | 3dye = 573.1 eV A= 10390 Photolecton Lines 3ds0 {| 3s pin Jpn Man Maz 1009 7 805 4s 4p dain sn 58 mom @ 4 2 ‘Auger Lines MsNisNas— MiNNas 1005 995 (AD m 76 (Me) Binding Energy (eV) 130 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Tellurium = Te Atomic Number 52 Binding Energy () 1200 1000 800 600 Binding Energy (eV) 3dyq Binding Energy (eV) Compound Type _572_573__S74_S1S_576_S77_ 578 ate = were HgaCidsTe = Tellrides = Hides Teo: & TO = TeOHe = Paste: BrTern @ PHYSICAL ELECTRONICS | ‘= 1039eV Binding Energy (eV)Iodine I Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 53 in KI ‘Monochromated Al Kot 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) Line Positions (eV) 3dyz = 619.3 eV a= 1150eV | | | | | Spin Joe Man Ms wr 930 (87S, 68019 4s 4p Ais dyn 7s sk Avgectines MiNi MiNasNas | | = 982 om AN) an a 19 Op ining Esc (e¥) 132, @ PHYSICAL ELECTRONICS |Handbook of X-ray Photoelectron Spectroscopy Todine Atomic Number Binding Energy (eV) Compound Type 3dsq Binding Energy (eV) 618_619 620621 622_ 623 oa rs Alkali ioides Ast Nila Nik 6:0 Nalos 104 10s 10s 1a Is @ PHYSICAL ELECTRONICS a 11s ev 19.3. eV 34x. || \ Binding Energy (eV) T 33 ais 133Xenon Xe Atomic Number 54 Handbook of X-ray Photoelectron Spectroscopy Xe implanted in graphite Monochromated Al Ka oS Binding Energy (V) MINN 301 Spa 1400 7200 1000 800 600 400 200 ° Binding Energy (@V) aaah | Line Positions (eV) | Bye = 660.7 eV inf Potoeson Lies | eierev ete is | a | 3dy2 | 1141-996 934683670 | 700 os Binding Ener () 134 4s 4p ys ddan 8 9 ‘Auger Lines MyNasNes— MuNasNs 355 382 (AD ™m 70) (Me) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Xenon Xe Atomic Number 54 1s oo Binding Energy eV) 1200 1000 300 600 400 200 ° Binding Energy (eV) 3dluz Binding Energy (eV) Compound Type 668 669 __670_671_672_673_674 Xe in Ag = Xein Au = Xe in Cu = Xein Fe = Xe in graphite = | NaiXeOs = Binding Enrey (V) @ PHYSICAL ELECTRONICS 135Cesium Cs ‘Atomic Number $5 Handbook of X-ray Photoelectron Spectroscopy Monochromated Al Ke. Spin 3882 MN Base Sasa 70 50 Binding Enerzy (eV) 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) Line Positions (€V) 3dsq = 726.4 eV 34sa | a= io4ev | } Photweleewon Lines noe | 3s jem Jon Mae sa i 1219 1069 1002 740726, \ 4s tpn dma Ayo Mdgn 5 \ mT el 7S \ ‘Auger Lines ———— | MsNeNes — MaNasNs 331 98 (AD aaeeanea TE 8 685M) Binding EnV)Handbook of X-ray Photoelectron Spectroscopy Cesium Cs Atomic Number 55 sve -MNN ww | | Tr “a Binding Energy (¥) 1200 1000 Binding Energy (eV) 3dye Binding Energy (eV) Compound Type m3 PA ns ns cs Vales cay = Cu804 caro. Cukor sci. CuO. csr) con @ PHYSICAL ELECTRONICS 3den = 726.4 eV 3dsa A= 13940 I 18 70 71s Binding Energy (¥) 137Barium Ba Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 56 ‘Monochromated Al Ko. Binding Enrsy @¥) 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) ley a | 3ds0 = 780.6 eV asisaev Line Positions (eV) Photoelectron Lines 3s Yin Spin Man Bs 1292, 1138 1064796781 4s fp fp Ate Asn SSP 3s DHS Auger Lines MsNasNas MuNasNas ‘900 886 (AD, 661 63 (Mp 0 788 770 Binding Energy () @ PHYSICAL ELECTRONICS rs 138.Handbook of X-ray Photoelectron Spectroscopy Barium Ba Atomic Number 56 Binding Energy (¥) 1200 1000 800 Binding Energy (eV) 3dyo Binding Energy (eV) ‘Compound Type. 78 m9 780, I ss 3:0 — BuO: sc) 2330. Bic. aMe0. sak. = @ PHYSICAL ELECTRONICS 3dsa = 780.6 eV 2 A= I5a3eV , "|| 0 15 Binding Enerey () 139Lanthanum = La Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 57 Monochromated Al Ko | | Line Positions (eV) ! | = 835.80 aelerev 34a | | {\ otoelson Lines | I ee | | tpn See Man 3s ] hoe 1138 853836 bho 4s tpn feyn Myo so SSP fs RS Br 6 os HT Ager Lines ManiggNas MaNasNis 867 58 (AD 634 el (Me) 70 us m0 Binding Eoey (¥) 140 @ PHYSICAL ELECTRONICS |Handbook of X-ray Photoelectron Spectroscopy Lanthanum La ‘Atomic Number 57 1200) 1000 300 400 200 0 Binding Energy (eV) 3x Binding Energy (eV) Compound Type 833834 835836837 838_—839 A= 1678 eV. 34 || { ls = Lai a @ PHYSICAL ELECTRONICS | din = 9358 70 us 0 Binding Entry ()Cerium Ce Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 58 Monochromated Al Ke. 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) f Line Positions (eV) | By, = 883.8 €V \ Photoelectron Lines | dettiver 34s || Spin doy Ho Ms 1m 184 90284 4s dpa Apr sn gn 58 SP wm mB mw 1 1m 3% OB [rd MsNsas a (AD 00 (Me) Binding Ener (€V) @ PHYSICAL ELECTRONICS 142Handbook of X-ray Photoelectron Spectroscopy Cerium = Ce Atomic Number 8 | \ \ 1200) 1000 300 600 400 200 0 Binding Energy (eV) 3dsz Binding Energy (eV) 3ayq = 883.8 eV 3dsa Compound ee] 682_883_SB4 a8 at In ia || Te ‘=1810eV | ce = CeAly = cePds = ese cecussis ml cron - ct - Bining Energy () @ PHYSICAL ELECTRONICS 143,Praseodymium Pr Atomic Number 39 Handbook of X-ray Photoelectron Spectroscopy Monochromated Al Ket Bisa 1400 1200 1000 800 600 400 200 ° Binding Energy (eV) " Line Positions (eV) 3dsn = 931.8 eV a=2oaev 144 950 310 Bioding Energy) Photoelectron Lines Spin 3pm Min yn 1339 1282952932 4 4pin pia dd SS wos S38 Auper Lines MasNisNis 77 (Al) 364M) @ PHYSICAL ELECTRONICS eeeHandbook of X-ray Photoelectron Spectroscopy Praseodymium Pr Ato je Number 1200 1000 800 600 400 200 0 Binding Energy (eV) dso Binding Energy (eV) ae 7 a=204ev | compunstye __1_982_ 9th ds | \ Pr = ie | 3dyr f\ 1 POs \ | PO: Ld | \ od 4d Binding Energy (€V) \ Campos Type us ne 7 ro = bad o 950 a Dining Ee 9 (D PHYSICAL ELECTRONICS 59 145Neodymium Nd Atomic Namber 60 Handbook of X-ray Photoelectron Spectroscopy Monochromated Al Ka. 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) 3dup = 980.8 eV A=26eV Binding Energy (¥) 146 Line Positions (eV) Photoelectron Lines 3pm daz Ms 1301 1003.98 4s 4p dome Ad SS Sp 3S er Lines MusNasNis 758 (AD 525 Me) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Neodymium Nd Atomic Number 60 1200 1000 800 600 400 200 0 Binding Energy (eV) 3dsq Binding Energy (eV) aya = 9808 eV save) 981 oe sa | Compound Type 980 1 Baan = 98 \ xa | {| NOs 3430 [\ 1 4 Binding Energy (€V) Compound Type ug 120 Py N&O: mk “ 1000 7 Binding Energy (V) @ PHYSICAL ELECTRONICS 147Samarium Sm Handbook of X-ray Photoelectron Spectroscopy ‘Atomie Number 62 3x2 Monochromated Al Kat 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) | 3din = 1081.1 eV Line Positions (eV) | b= 268eV 3dsa {| ! , f Photosecvon Lines i 3d} fl | I | Biv: Mx 4s 4pin tpn 4S | ie ma 4 BO aD } | Wi Auger Lines | | Maas 682 a) 49 Oe 100 rr) Boing Enrty€V) @ PHYSICAL ELECTRONICS 148Handbook of X-ray Photoelectron Spectroscopy Samarium Sm Atomic Number 62 1200 1000 800 600 400 200 0 Binding Energy (eV) 3dsz Binding Energy (€V) 3dsq = 1081.1 eV Compound Type _ 1081 1082 1083 1084 An %8eV . sm — SmOs — 3dya | 3dse i \ A | A a VS 140 ~ 1100 Binding Exergy eV) @ PHYSICAL ELECTRONICS 49Europium Eu Handbook of X-ray Photoelectron Spectroscopy ‘Atomic Number 63 ‘Monochromated Al Ka 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) Line Positions (eV) Phototecron Lines Bin Me 4s pin fon Ss Sp MSS 1126 363289255839 i MusNsNs 67 (AD 404g) 1190 1150 Ti Binding Ener (¥) 150 @ PHYSICAL ELECTRONICS |Handbook of X-ray Photoelectron Spectroscopy Europium Eu Atomic Number 63 MN Mg Ke a 5 1200 1000 300 600 400 200 ° Binding Energy (eV) ao Binding Energy (eV) Compound Type 128124125 11261127829 \ ma | f\ Mae | fy | co - Vj) of | 4 Binding Energy (V) | Conpond Type 128 129130131 es || | ee a N 0: _. sa rr rr) v0 Binding Enc 1) @ PHYSICAL ELECTRONICS 1sjadolinium Gd omic Number 64 Handbook of X-ray Photoelectron Spectroscopy ‘Monochromated Al Kat 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) \ fj Line Positions (eV) ss= uoaev ily a nf Protecton Lines || / I \ \ \ Vv Biadiag Enerzy (@¥) 152 ree 12181186 4 4p 4nd Sst mom om mw 8 ot 8 ‘Aupertines MaNsis aa (AD 38 (Mg) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Gadolinium Gd Atomic Number 64 Mg Ka wn “ 4 5p, 1200 1000 300 00 400 200 ° Binding Energy (V) 4d Binding Energy (eV) Compound Type 140 M41 142143144 aad os - cto, a ‘3dsn Binding Energy (eV) Congo ype 187 asso | ot — a G40, = Bins ery) @ PHYSICAL ELECTRONICS 153Handbook of X-ray Photoelectron Spectroscopy ‘Monochromated Al Kot 1400 7200 1000 00 400 200 ° Binding Energy (eV) | ase tasoev | Line Positions (eV) ,“ oto Lins | — | ite int i A a oo RS ome Oe 90 154 Biading Energy (eV) Augectings MasNasNes MesNasV Mv Mav ‘339 aul 260 230 (AD 326 18 oe) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Terbium Tb Atomic Number 65 1200 1000 800 600 400 200 0 Binding Energy (eV) 44 Binding Energy (eV) Compound ype ss a7 aa 19 | a = 4d = 146.0 eV Teo: = 3dyo Binding Energy (eV) ] Compound Type 120 a ne | i | . — ‘Th0s = — _ TW: — »0 ning ney (V1 | | @ PHYSICAL ELECTRONICS 155Dysprosium Dy Atomic Number 66 Handbook of X-ray Photoelectron Spectroscopy ‘Monochromated Al Ker 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) 44= 1524eV 200 v0 0 Binding Energy () Line Positions (eV) Photoclecton Lines me 13331296 a a ee ao Boi eB 8 Auger Lines MisNsNes MaNaV 326 368 (AD) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Dysprosium — Dy Atomic Number 66 1200 1000 800 600 400 200 0 Binding Energy (eV) ‘4d Binding Energy (eV) | ‘Compound Type 152 156 160 164168 4d = 152.4 eV | Dy 1 oo { Le | Binding Enery €V) | compound Tye 1 209 11188 | a - | Px - (PAP LHgtSCN = @ PHYSICAL ELECTRONICS 185Tl 81 Handbook of X-ray Photoelectron Spectrosco Monochromated Al Ko. “3 a0 Binding Energy (@¥) she 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) Binding Energy (eV) 186 Line Positions (eV) Photoelecwon Lines cs eco Leg enema nen NNENEEEREEIEEE 4s 4p tpn Sin dg Sot 87 720 610 05S 33 40 4h Spin Sma SdyaSdga a rT ‘Auger Lines NiQss0ss—NDasOas NNO NNO 01 1399) 12s 122 (A) 168 66, 1008 989 (Mg) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Thallium — TI Atomic Number 81 . 1200 1000) 800 600 a ae ° Binding Energy (€V) fir Binding Energy (eV) Compound Type 7 1s 0 7 = ™ = npr ni 1 ns ns; 0: = CuTipysiine = a ‘10 (CleTIAPHPEt:}s a ‘Binding Energy (eV) @ PHYSICAL ELECTRONICSLead Pb Atomic Number 82 Handbook of X-ray Photoelectron Spectroscopy Monochromated Al Ko. 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) Line Positions (€V) aratsey Photelecon Lines ee 4s pun 4p Aen dg Set | se aI 130 | Mio Ain Spe Sen Sn Sty wo rons ‘Auger Lines NiOisOu ——_NaOas0us 194 191 (aD Po st 1158 Mt) 0 i Binding Encry eV) nae 188 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Lead Pb ‘Atomic Number 82 1200 1000 800 600 400 200 a | Binding Energy (eV) = a j ‘fa Binding Energy (€V) | team 136 60 Compound Type 136137138139 140 Re \ | 4a || | PoTe Pose Hakides Poe PO: HOH: LIND, Poss Paso. 0 130 Binding Eneray 1 @ PHYSICAL ELECTRONICS tdBismuth Bi Atomic Number 83 Handbook of X-ray Photoelectron Spectroscop ‘Monochromated Al Ka . she 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) 4fi = 157.0 eV ue | Sf {| 10 ico 130 Binding Eserey (€V) 190 Line Positions (eV) Photoelectron Lines 4s fpin pan dodgy Se 940 805 679 dod ad 460 4a Spin Spa Sd Sd We 1st i993 Augecbins Ni0ss045_NeOusOus 1387 1383 (AD. iss 1150 (Mp) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Bismuth Bi Atomic Number 83 1155 Binding Ener (V) ha 1200 1000 800 600 400 Binding Energy (€V) 200 ‘fy Binding Energy (eV) Compound Type 156 157158159160 161 Alyn = 157.0 eV 162 Bi Bis . Bits BiFy BO BiOC! NsBiOs = BisMoOs = BT; (Bi0)10> wl BixSO.) +20 @ PHYSICAL ELECTRONICS 191Th 90 Handbook of X-ray Photoelectron Spectroscopy Monochromated Al Ka. NL 15 Binding Energy (eV) 1400 1200 1000 800 600 Binding Energy (eV) Photoelectron Lines a a ee Spin Sexe Stan Stns Sp Soa 2 17 93 as 8ST ‘Auger Lines NOnv Line Positions (eV) 7 965 713 IGM NeOusOisNiO:0; Ng OasV aoe 1335 1239 (AD um oz 1006 (Mg) 192 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy. Thorium = Th Atomic Number 90 1200 1000 800 600 400 200 0 Binding Energy (eV) fm Binding Energy (eV) Mg = 23207 el pore renee oe cal “| / ™ = i | | | net a i | / | aa Binding Ey (V9 \ J | Compoural Type 14 675. 676 i SS | ™ (omer ees - ‘Tho: = 35 Mo 35 Binding Energy (eV) @ PHYSICAL ELECTRONICS 193Uranium U Atomic Number 92 Handbook of X-ray Photoelectron Spectrosc: Monochromated Al Ker 1400 1200 1000 800 600 400 200 0 Binding Energy (eV) | ataearnsev cae | 400 385 “390 Binding Energy (eV) 194 Line Positions (eV) ! Photoelectron Lines Photoelectron Lines fein tp dhe 4s As thin 12 10879736388 TT Ss Spur Spin Sue Sdse 6 pupa 32 260195 03s ‘Auger Lines NeOnV ——NiOnsOs_NgOysOus_NgrDasv 142 1396 1386 1208 (AD, 1179 163 1183 oat) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Uranium —U Atomic Number 92 eke = SA = | \ oe NO ~ Binding Enemy (eV) Min dase Sdse 1200 1000 800 600 400 200 0 Binding Energy (eV) ‘fro Binding Energy (eV) Compound Type 377378379 380381382383 v Tetris Selenies Suldes Hales Oxides Oxy Halces SOs Uiacaes cao. KUFe @ PHYSICAL ELECTRONICS 195Ill. AppendixThe following tables plor the binding energy of the most intense ph Appendix A. Auger Parameters jovoeleciron tine versus the kinetic energy ofthe most intense Auger transition. The Anger ‘rameter plows are useful for further separation ofthe chemical state. Fluorine Compound Fis FRLL compen Bad my eV) Ra ye) AF 682.7 6593 Por 683.6 6585 BaF; 683.7 6562 KoFes 688.0 6560 NaF 684s 6550 CaF 6845 6560 CaF 6845 670 CaF, 6845 656.2 OF 6245 656. Lar 6845 6580 ZaF2 6846 6556 PR 6846 6512 ‘SmFs 684.6 6570 Kaze 6846 655.1 CaF 648 6554 NGF 6848 6570 Ty 839 6570 Kits a9 6557 Sia 685.0 6563 NF 685.0 6555 UF 685.1 6547 Fy 6852 6564 KoTaFy 685.2 6550 YF 6853 6553 Nazis 685.3 NaBinFs 6853 HF 685.4 KONOF, 6854 NasAlF 6855 MaF 68538 GF 6859 NaxGeF 6859 NasiFe 6860 KSbFs 686.6 NaBFy 6870 Niooccr; 6384 P(CF=CF) 6890 6524 198 Kinetic Enrey (¥) 1a 662 ————-_______ ~~ asa2 t z i i 652 | | TAT | | ih i /\ | } 3 GrrbavselCretereet atoreentetetelcrtaleny 690 689 688 687 686 685 684 683 682 681 680 Binding Energy eV) =the @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Sodium Compound Nals | NaKLL ing Ey 60) Kei Ey 0708 se10 0708 3905 10709 3910 10709 9907 10710 9986 10110 soz 10711 990.1 ton 9308 won 990.3 ton 939.9 10712 998.6 ona 9898 1012 904 10713. 904 toma 9943 wna 945 wna 9306 ona 9896 ionia 12 sons 990.1 07s 989.8 1071s 989.7 wis 5901 iors 589.8 ons $908 on p12 1013 906 won 989.8 won 989.9 wong 5943 ions 990.1 10725 $900 NaxO 10725 9898 ‘Mol Sieve Y 10726 9878 NaBRy 10727 9871 Ld @ PHYSICAL ELECTRONICS Kine Energy (€) Appendix A. Auger Parameters Fluorides, 2 2088 2086 Binding Energy (eV SeeAppendix A. Auger Parameters Aluminom ‘Compound AL2 ADKLL. ing Kime Egy) a ns 13933 AlAs Be 3812 ‘AlOs, gamma BI 13878 ‘ALO alpha Bo 13882 ‘ALO gamma mo a8 AMOHs, gibbsite 740 1874 ‘Al03, sapphire 742 E78 AIOOH, bochmite 742 1976 AMOH, bayerite 742 13877 ‘ALOs, gamma m3 1878 AIN 44 13890 ALSO silimanite 74,6 13869 200 Kinetic Energy te) Handbook of X-ray Photoelectron Spectroscopy 1391 1390 + tt 1462 1389 + —t 1461 1388 1387 | 1386 1385 Hesiteestassl sali satne las settee beset eat 15 ” B n @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Appendix A. Auger Parameters 10H, 98 Binding Eaerey() ins m8 __. ine Sttcon + Metal Sifcides ~ vase Compouns sip iL) aa yey toe 5 os 16166 Most oe (672 nisi sos (si? Mal Sieve A wa tsio Hydrooie «1017-16107 SaNe is 16126 Mal Sieve x i22—lepa Natolte m2 tap Minmuscovte 102416096 = Warman Cassi) 1024 16100 z paedyiil tinea)” 1024 16084 a | LiAISi2Os, spodumenc 102.5 1609.6 z i NaAeOn bie 102616092 : Nios slimante 1026 16085 i foetal Gein 102716100 2 fia Sieve Y ios 16087 Poon 191492 PMebyhil Ges) 1029 1B Kase 03016090 ais MgsSiuOsOHn 103116089 ‘S03, alpha cristobal 103.3 1608.8 | Hzelon 0316084 tose 16083 13s (eles wae 1a | ie 18 | | 1606 LH Ht TD | @ PHYSICAL ELECTRONICS 201 |Appendix A. Auger Parameters Sulfur Compound S82 SKLL eigen Ea) ws: 1621 21156 Nis 1822 21161 ws: 130 21156, NaS 1656 2108, ‘NaS, 1656 21085 NaS W205 50 1674 21062 0, 168.1 21062 CuSO4 169321080 SF m4 21005 SF 72 1005 202 ‘Kinetic Energy (eV) Handbook of X-ray Photoelectron Spectrascopy 2108 2106 2104 | 2102 2100 ave eg vd 178 176 I HHH 174 172 170 168 166 164 162 160 Binding Energy (eV) @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Appendix A. Auger Parameters a 1883 oa) iss Copper pot / Compound cu2p CoM | oe {| 1380 amo 9316 sis ? ee moins | me mao i os ela : Sin te) i as way Sine : ao mse &0 ws See ee wee Sink & was Stes Gatn me Site 5 mie eee cap CO sat eats. Bu Slee eal we Sito oe Biss Ve Me cunoo» oss 3183 one 937 836. 935-938 -938—952_—831_— 830 Cas 9361 9160 Binding Eat ¥) @ PHYSICAL ELECTRONICS 203,Appendix A. Auger Parameters Handbook of X-ray Photoelectron Spectroscopy Zine Compound Zn2pn Za LMM aig oe 0) Rime Ear) Zovacacrs wis 9877 Cugszmg 1021.6 9927 220 weirs gags a 21.8 992.1 za wigs 9921 aC wis 989.4 ZauSinOnOHg+ 24:0 102196 9873, 20s 1022 9897 Za 1022.2 9362 Zn0 10225 9877 Zar, 10228 986.7 Zaly 4023 988.7 ZaBe2 1023.4 973 inti Energy (eV) 904 | oe ee i { | | 993, t | | 71 | ce 992 | | 991 y 990 |} Oxi ' ! 989 ' | 988 | a La 987 ' Halides “| 986 : | | 985 HHH + 1025 10241023 1022—«N02t Binding Every () @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Appendix A. Auger Parameters 128, ——— -_— — 1268, 1266 ‘Compound bas 4s 12260 5] Gahs 40g 12283, 1264 | As 41612248 2 Phas ag zd F Asses 2290 12223, : Ash a5 ims i Medel, 85 1223 1262 Pass ‘41 12200, NaAsO2 “42 19s a PhsAsO 4312195, g As03 4912188 2 1260 ‘srs 45312181 i Nally 450027 z Ans 46212175, z . Kash 4001238 Lf) | m2 La Wot reel eros 2 UOC sian toe) @ PHYSICAL ELECTRONICS 205Appendix A. Auger Parameters Handbook of X-ray Photoelectron Spectroscopy 1310 —— Selenium I | | ce Seid SeLMM 1308 : ‘Binkng Emery (e¥) Kinetic Energy (¥) ! fe ssi 13067 | 5 335070 Prse 538 1040 1306 Phases 55813043 Pinse 3184019 ChsSePhn 377129 SePhz son | $02 389 Bola = pos NuSe0s 31 13012 z HSe0, 592 13008 ? Hse0, 62 a9 Z 2 a0 + 1300 r 1298 LZ, | 1296 Ht it 4 L. 2 6 6 59 58 s7 56 55) 54 Binding Energy (2) 206 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Appendix A. Auger Parameters ‘Compound ash2 Ag0 AF Cuagse Agsse An0 AgSO4 Agt Ao Ans A Ae Man Agr ig woven + ina Eaeray (eV) 369.0 + 6.0 €V added tothe kinetic energy data on MN to obtain kinetic energy of MaN@Ns ine. a eed 370 369 368 Binding Energy (V) 367 366 @ PHYSICAL ELECTRONICS 207Appendix A. Auger Parameters Handbook of X-ray Photoelectron Spectroscopy 386 > 788 Cadmium 385 > 787 Compound CA3tia CUMNN y / "pou ing er eV) Kine Gene) x 384 = = 786 cate 9 was e , | ca 050 3a 4 \A cio 4052 3822 383 785 Case 4053 aL cas 4053 3811 ft YO Ca, 054 3810 382 784 CaF; 459 sas 1 2 38 on F 5 30 { i 2 319 Pr 378 377 376 315 408 407406405” 40d 403402. Binding Energy (¥) 208 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Indium Compound In 3dy2_ In MNN ag ise) Kit ew) IngsSns 43.6 405 in 488 ‘4108 InSb aad 4016 ngOs 443 4064 Insts 445 308.9 iP 4446 4080 uP 4446 40 4083 @ PHYSICAL ELECTRONICS inete Energy (eV) Appendix A. Auger Parameters 42. ——— a: 854 410 -——— 852 oy i 408 850, 7 406 — < 848 | | Halides: 1 | } 404 7 - 846 f i‘ LA ea | 402 i | La | 400 48 ATG Sa aig Eos tong wong + 000g 1Appendix A. Auger Parameters Handbook of X-ray Photoelectron Spectroscopy CCorspound Sn3dvz Sa MNN sa a9 ara al es so ana j La i Sa 485.1 274 { wT Sis 4855 4357 80 oe et NagS00 62 G17 | bos = 88 Negeo, SS ee esos oe Sin . ner oh os g Boas i | Eas “ wae wile 0 . . 488 487 486 485 484 ban ae 210 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Tellurium Compound Te3dyo TeMNN ing Eee) Kies NexTe sn2 4855 Te 730 4922 PhoTes 519 4885 HTB, 3753 875 ytePhs S134 4878 IfeMer 5756 4866 e0; 3157 871 1TePh 3158 4882 poly TeOOH 3161 4866 e] OyTePha 516.2 4963, z BroTePm 5162 4866 2 Te0s 5166 4855 E BrsTePh 3166 4868 3 BriTeBu 3166 4865 z Tebrs 3167 4873 = Te 5169 486.1 (NHL) sTeCIe 3169 4864 TOF sm 485.1 Binding Enerey @¥) @ PHYSICAL ELECTRONICS aAppendix B. Chemical States Tables ‘hie comptein oft he element, ised clphabcals vies sei Binding energies of rou compounds and prs cemented Tas compton reseed. they are ntic ener For compounds ih moe thon ne chemical sate an ati denotes the atom whe ae aise, Te references are expanded i AppendisC. Any ksting with a refers tthe work conned nis hare his upon mst of wich os compiled by De Charles Wagner for Pscl Electrons is pa of the chemi ie ienion ltt pat 7h ae i oe he XPS atabse SRD20 of he Maal Instat for Sandards nd Tectwoegy (IST). Fate ferences na lee fund aie journal Surface Seience Spectra published bythe American Vacuum Soe. Ags Assunta asia RO ae 308 ° ABSOMNNS) 3512 ROTA M 382 ‘Asam AABIMLNNS) 3801 caw te xh? Biswe0 AFMNS) 93 caw i x 368 isu AFOINND a6 caw } a 3082 Bisws0 ABO 3566 Sobor3 ms 3682 SHBKTS ABOMMNND 5506 RD?S, Ca¥? : 4 3682 yas x0 3585 ‘WROMTS ae 3682 HGW?S, ScoT3, WROMID, AgOMENN) 3508 caw i (GawWi7 SES, Wasn?S B50 3542 Wagns | 682 RRDIB, S072 gS. 3547 “TREO 3680 ‘AgOOCCFS 3551 Wages | ens j 3690 Ate | 3683 " ne ° | 3687 ‘AiO. sie a8 ° 088 a ns ers wrHKSD, | ots ROMS, WaT | 3618 AB: no eccr3 | 3618 As 36 “ay | eet RDI ‘GaAs 26 tay | 3680 caw? Foal na sites 3613 caw LAB 156 MScr3 3613 caw AN 14a Mscr3 3618 HOW25, GWT, Ses Ss 746 Msc | 3ots RROTS ‘ib a6 MSCI3 | wa FHGWYS, GWT, Seho73 ‘sBo 152 Msc | 3680 wRDM9 nc mI scr ers How? A 783 MSCS | 618 ‘TREO ‘MeO ma reuins | ESO. 3683 Weasts WO. 13 etie76 | ‘Ax00CCF: 5688 Wages Como. ne reuse | AgiOA) ee HDDS! Maal. may BNUW?S AgGChpyidNO) 3686 Sma NAL. mar WSI9. NateTs 4D 13 ete, MSCTS, NSLST? AR MANSNs MO m7 ile, NGOSTS ss ssn wRDM9 ‘AHO. saphire 32 “ag, WPAKS? n 3582 Wages ‘Os phe no wonki2 AEN 3319 RED 78, PWA 79 ‘Os amma 7 WPHKS? AE OMNES) 316 awa ‘NOs. panne 780 Band a 3583 Seto73. FRET ‘80, fama a3 Nate7s MOApo My ASL Weas8o ‘NOs, bce a2 “ray, WAKA ‘nioags GN) 3513 Weanto ‘ALOR. bene m2 “Tay, WHS? Mgvage ON) 3521 Weantd ‘AVOH): iste 780 WPHKS? | MewAza (MOSS 3519 Weasso ‘SiO tbat 737 ‘nsw4 Maran OSSD 3522 Wieanso ‘AiSiOs mative 748 ase SiO, imate 746 AaSw, WPHKH? cunsSe MN) 3813 RROTS ‘bie NAAISiOs a] WHR? @ PHYSICAL ELECTRONICS |Appendix B. Chemical States Tables Bemonie Keolinie Mica, muscovite arate Pyrpbiie Spodimene HZepion Hydgrysodae MolBicve A AAW AIKLL Al AAs AN ‘ALO sappice ‘AiO alpha ‘Ak amma ‘A008 ‘ANOEDs bayerite ‘ANOEDs bisie ‘AbS1s slimanite ‘Abe, NaAISHOy acini Mica, muscovite Nawelte Pyropbylie Sposunene H Zeke % Mat Seve Ar2p arinsi rin Ag Aina rin A ‘rin A ArinGe avin ‘vin gai ‘rin gptie As 34 as a Nas AAs ‘AlGans Ga GA Ins Asses 24 ws “10 10 wos “09 06 29 Banas Bard, WPHKED week weuks2 wens, warato Tayis2 Taka Taya, WHE wen weaks? WAKE, Tyit2 WeAKE, Ty? wake Weak wake weake weaki wen won wens? weHKe2 wenikee Wek? cirire ivirs cians awirs citi Kiwis wiwars wRDM79 ° Bera, BWWITG, MINNTE, SMAV?2, Ueoati Bwwns Tayi? Tayi PMR GGVL79, wROMT9,Tay82, MINN, IMNNTS LeMK7 BWWTE, Ue0Ws2 Ass Ss eS: Asbo AO AsO Handbook of X-ray Photoelectron Spectroscopy oy os 5 a3 467 5 42 49 4 awwrs awwie SMAV?? Bwwrs awwrrs Leccr7, maw, ‘Tayi, WROMTS| Best, BWI, MINN78, SMAV?2 SMAV7 WRDMTS ‘Taylt2, WRDMTS sMAvi2 sMAVZ. sMAVZ SMAV72, WROM79 SMAVT2 HVV79, sMavr2 BWWI'5, HYVID WWII, SMAV72, HUI9 sMAvT. BwwiTs RW HYVI9, SMAVT Wagers, BWI Bwwins ‘Taya, WRDMTD Bwwins BwwrTs BwwrI5 Bwwrs Bwwrrs ‘Tey, WROMD, awwine WRDM79 ‘Tayi, WRDMT WROM79 awwire awwine Bwwrrs Bwwns ° AsamT6 Biswa0 Biswad Bisma0 Poe ALMPS2 APW>3 HPW73 wwe 78 BMCKTT. VvSW77 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy cuasen ras 54 cHauPne 3 (PIANOS a4 CinstPhAs) a2 (CANSPECS.) us (CASCHPELCH 540 ‘Au MBN a 20153 ARM 21016 a 0157 94 1813, 1863 1580) 8.010840 Bote MeinBitl Nana, NHBF, HBF: NEBR, MenBFe NsBHOMe), Paar, PRPOBr, PRPOBCH PuPacl CHCN CIC. BOH: FOH.BIOH CEPLPB Hs (Pn PLP Bol @ PHYSICAL ELECTRONICS acxr7* Ba Sds0 Ba ance? Be McK?” Bis ws077 mo wswnr 5:0 wswnr Bo BuNO>s B:C0s reso Bas0. ‘wateso Bas. ‘watso 2:50. BiG. BaMoO. ° BakhO. rar HH Ba MNN aces Be MECCS 30 Ecc? B10 MECeT3 BsS0 MECCTS tects Bets MECC?S Be iva Be MECCTS eo MECCTS Bevo MBCCTS Bekn0, eccrs Bef MECCTS Be ONTO KOKsS, WRDMTS Naber u70 Naber Bowie Naoss HAI, RNSTS Rass ura nu aro ino HHO mu cous Boots ears aura iro wn aura Bi0ic.0, a BixSO8s- 140 nur CGHTS es Haro na uO Cte Ris? Cabe Ree? Appendix B. Chemical States Tables 08 73 08 736 791 79 708 nas 99 ms 91 736 ono sms sus 3961 ma muy 13 037 138 183, 61 us3 a7 110 1569 19 1510 1589) 1593 os 1593, 1508, 1599 19.1 1583, 15927 1586 1612 os at 6 Vaveso ios WwROMT Sit cuswas crswa3 ‘Wags cuswss Sit ‘ace FSS? NFSI2 aves. wRbM79 vavesd Wagnt? ° HUGN7O, SMM, WRDMS HIGNTO, KOK, NESE NFS82 1NESID NKBFI3 WONT KBPS NKBPIS ° ses7? Lear WRDTS, MSV73 Msv7s MSV MSV7S Napsis MSV seca MST MSV73 Matio7s MSvT3 MST MSV3 Mvsis Smee 2sAppendix B. Chemical States Tables cath Fac’ Hc More nc Nae ne Te ve we ze Kew acy KiCoeN, KicHeNy KiFeCN KoFeCN KMaN. NaMatCNi, KMCNs 216 2 0 ma mot 7a 667 60 os ong 689 3 8 7 992 13883, aso Bea 101 aavsr MYST, Wares MVS, Shi vsr3 sarors vwiistt sarprs efet SATDTS Tiers NzB 78 SNMK7E SNMK7E SNMKTE Tier ovK7s HvvI9 HVv79 EMGK7 EMGK74 EMGKT a9 HV Nesi7e Waga7s Wega wats Wagart WagnTt ° JHBKT3 RAUF saves EIFS REDFED REDS SiLe7s RHIFEO REUFeo, KITS RHF RIFE, CoRa76 RHE Vana7s Vans Vana ann76,Zeta7t Vanat6, Zeta Vans a6 Vann76 Vana ee Handbook of X-ray Photoelectron SpectroscopY cxCOm caiconso Fe(COs FaCOHN0y: MasCOn NiCOw (CO Bes Bastin ‘Ag, aco; xC0 aco Licos Nac0, NaHCO, SCO; ce Co: “ch OF: cre Cyeloberane Benzene CatiscH, Cac (CxCH) Caticih 4) Fatt aC CHICHO cH:CoOm HCH, Cae Inositol Hydropinone (CrHiCOH, (CHC*OR, (CC*HO HCHO (Cisco, CH.c*ocH, cEC*OCH, crRcocts (CO, (CH:C*00H CHC*OONs CHOON ‘CHIC*OOA Hooccoott (COON, CFC*008: Cr.COOE ‘CLC*COONs ‘chcc*OONs F,C*COONa Ficc*OONs PBemoqunone m9 282 aan asrs 282 26 2a mma 204 2806 219.1 2s 2 2900 ams 210 Bis ais 239 er 232 247 O70, LaFovs,ckaMT2 27 cK 2851 cant 250 Kar nas BcDH3 2s KTWy76 2863 H.70 2359 con.70 2s kara 2as7 ‘onze 2364 ove 28 G70 2386 cont.70 2865 HEIL, cre m7 ‘cuL70 2s ccu.70 ams HH 2a ‘GHLI0 ans oHi.70 2a ‘oHHLTO 2893 ou.70 282 ‘HHS! 2a HHLTO 283 HDDe 299 oH 2550 ‘on70 04 HEL 70 209 conn.z0 2095 HHO 23 GHHL70 om ‘onL70 219 ccit.70 ama oven @ PHYSICAL ELECTRONICSCascaen 2800 cHeH.ococ ba ee-OC! (POLO HC%OCHn HCOONH. Ocockin OxcH.coomn x67 QACH.C*0OH bes ccc oH auc Wee HC catenicch Gace) cur GaLECR) Gane Gauci HFC GFA Gr Grocrcl, GrCCrC: cnlicn CHCN CHICONH: BNA BONER, ANH coursct (CHiN cH ~Fhcx CHHSCNBS CHCNEE, “rate NCeN=Cioti nee NCNCNI mau2 HNCH.C*00N ms Paso 26 CH=CH PCH=CHOH) PHOCOCH=CH) pNsOCOCMe=CHt) 2481 PCHOCOCHCH) 6 PICHLOC*OCH=CHS) PAOCOCMeSCH.) @ PHYSICAL ELECTRONICS GHHLT0 GHHLI Guo Gut GHHLT HHL GH GHnL70 GHHLT0 GunL70 xs cKM Lars cet cM? CKAMIS cCkAM? KAM? ‘GHL70 (GHHLT0 GuHL70 BCGH?S CGH SNMK8 BOGHTS, GHLIO BeaH73 Lares | ea? CGHEIL70 BeGH?S LaFors BoGHT3 Bois Hao LeRe77 ers? GHHL70 (GHHLT0,LeRa77 [eRe SWA77 yys7 Laos MPR. MEO DMFB0, LaF BALSTS pRev77 Rev? HDDS HDDS! coms cms HDDS: PVACHC*HOH Cellulose PEO (CHC"H.O.m ply CCH.CH:C=0-)8 Eaec*o0H: HOOCCH:UC*OOH Sod Seurte Mylar Puente Ct Mylo Polyester 2-0 Mylar Potsever C202 Polyenbonse-OC°O: Teflon (CF:CF=n (-CRHCE> i ECEHCHF= mn /CHHCRn cence) (COHCESIn COMCHn COROT PYCCCHHLCHCH) PYCCCHCHCH) ca2p @ cx G c ett, case Gs ec, a0. C20. co. cxc0 Cano: Ccr0. CaMoo. CaRhO, S04 caw. CasSiOy caLMM ca co. cecoy Cec; cor ca3ase ca ce ComSnu Appendix B. Chemical States Tables 3s 3467 uso M65 my ra a6. 67 a3 3169 387 3a 12 ST ao Mes uno oar ams ais 219 2891 4051 aso previ7 Wass | Wapas t opm | vaveto SMKMIT FMUKI? | PMUKTT MUKT7 Wag? aga? NSLS77 nys8t i FMUKT? | valet | Wagn??, CLSWH, WROMT cuswes ACHTTS | NFS#2 | NFS# euswas Nees WPHKE? aNetO RDM, Wognt? Wage? Wage? | eat ° {GaWi7, HSASAL RDM. Wags Hsase!Appendix B. Chemical States Tables HpnCiste cate case cas Cal CBr: caoH, aco; caMNN ca care abe ay car. ca cead ce Cea cen, Cecussis 0: a2» Kc ca KCI Nal Rea cua: Nek Pach Raa REQ, 12140 secl. zach, Key KMec, Koc Kral Krol. KAC, 218 4053 ‘oss 4052 4x6 ‘oso os 007 aese aes aaa Mu 310 sms 3e2 838 389 ams mS. B83 835 a8 ara 60 98s 1963, 1982 94 985 m9 2m0 94 1989) 1993 1982 1993 ro85, 1986 984 1986 ioe 1988 1988 seBso SBBIO. Guar? awit caw? Gawin? SAID saTors (GaWiTT SATOTS. WagntT ‘GaWi77. NGDSTS, NESE2, SBBMO ows WwROMT9, HoWTs now? NFS WRONTS, Wags, Gawin? Gwinn awn Gwin qv onwinr Gwin trBcao LrBCRO wapr9 [NGDS7S,SaRato ° Mvs7a MVS73,NSLS77, YYSTE -MVST3,NSLS77, SGSO70 MYST, CSFGT9| MvsT3 WHat Kile, TRLK73, YYS 78 NKBPrS our” MHL BCH 5 Kies NSBNT?, LeBi72,Cole72 Coher2 Collen Leper NKBPTS CCMHLT. SNMK78 Cotte? LeBe72, SNMKTE Handbook of X- Kec Kec, Ksnce Kwch Kite, Kaci, Kieth Nasu Ces nsbC Punic PuNtinicl PUNE Cl, RANK ACS Shc ceseck KirclNO ic csci0, CIO, Kao, Lica, aio, Ni CiO., NiciO, "6H,0, Racio, Meaicl ancl Phuc Nic! CChlorbenzene Penacorbenzene CARP), Ea. (PMPRPHCL tone ceaPrpcl, aPePch PrP anicl, PaPanick, PAPBCH PrPOBCh, @bxCIaICHEWNs (CIICIAELN), cua, CuCl: get, el cs Tcl, uch uc uc, oct voc, zac (store ‘orc 1982 2017 iy Photoelectron Spectroscopy coner2 Cotter2 Leb? NSBNT? SNMK75 HUGH? sere CHILI. Nefer8 sNMk7e SNMK7E Nelere BCHTS, Tiers Tiers NsBNT7 Sher¥6 mvsrs vst vst Myst Mvs73 NZB78 NZB78 vst EMGK7s eMGK?4 Hwv79 EMGK? CKAM?S cKAMIS 1efer8, O79, MMRCT2 Rigg? BAT LeBr2, NeteT,Rigg72 Rigg”? BNSATO, SHUTS NzB7s HW? HW Bewaro Bewar9 SATDTS yysre sators ur FATT MRVB TBvLe2 ‘TAVLE TevLE TBvLR TBVL2 SATD73 Kaz rivers @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Appendix B. Chemical States Tables. kc mes KT Buco mo: eM Kao. UNAM cient jus Ewoxit fanart 0M ict mao NaMOT amt feo ALM Cimnre veo An crap apc (3 FSD & mee mapcacl (0 Fas cro, m8 Cire mio Gxt @ Ses Lana Gnech mo ce & a wnown canines eo taka Gav Ser kako pence) md PREVI, WRONTS ce Ses Stab ' ce. eo ewes | com es Se Gee & m8 eb me en | co Ta 8. Go ser eae © fas Cann can ina xen & mer oars oo, Ses ——_“sbrra,comae. scr Cone im ha ‘tapas. Nests cu re Mens cor ses KK cp mio Mecena ee Sass os ms Let cr wo cae co mo | Gen co. Ss Soren Or -aito jas Santon exo m3 See or jer sen Groot cio tikes i co a2 WRoAny exes Sus poor. pcunr2 oo Tens ims NODS. exco Sno Reo srs. care cree ies mm2 Nests oar ern mos as i ms Groce Siar See cer je Mecers Siu. Sri Cor \ joo cons Kew, So _(NssPo | mo Mecars ico, ies Hono ' js ue Use. Ses Aca | ely euts co. gro ews | wor Oui Neco Sas curs i Ter xe Neco, sos tine yao ine Nace Sea Nea jas erooe Neo. cus Likes jes aus Nueo: Sree wi Nees Noor on takers aces mo wet Bae snare i meee ine mcr. Ser Are | jas ‘News ecco, Sao ents | cca jee aMOrS tne Sesame | cree mo Nao canines mess aco, ms ese Koren eS Mme. zaa mis Sawn kere Stoke jar beat crs Sy 7812 OKHi76 Citacachs 576.1 ‘ZeltaT | Cencte met Vai Greece, mo Ae | Costing mie Mawr crete Sh Baba. con nose Grane his YNART cretn: se) Gar Gratin men execs Bar ebins.osaune Genta ats anon creat ser eons aca jr eons crete: oat Hon rc ms ean encour Sex pecan @ PHYSICAL ELECTRONICS 29Appendix B. Chemical States Tables caCOMNH, CACONCAH, CACONCAHe ACOs?) CicacsH enc) Crem a Cs34en c © Gr Gide Get Gr con, C804 caro, Cur, cao, Caco. C520) coor csMNN 980. ccoH cu2p 20 co co. o cu co ca Gn co Ge Cuda, Case cue cur Case case CuagBe Canse; cos cos cas as cs Cae 755 S157 st 3752 5761 ste 64 7260 m9 mao m7 no 76 m9. m9 78 402 mas m9 mas seas 58857 9x27 one one 9326 9325 one 9329 9327 on 9x6 ons 9322 9322 3319 920 9319 3319 ons 9322 ou 8319 sso 932 Bon72. acHstr2 cons PFD BoGHT. acHMT2 osmins cH rosa ° Kor”? vst Mvsrs vs7s Mvs73 sors7: Wage? vsr ysis MVs73 ACHT?S AcHT WROMT9 Wega? ‘WRDM79 ALMPS2 LANMst Biswad set Biswa0 ese ‘Asan?6,CaWi7, KPMLT3, WRDMI9, Wagn’s van077 ego NSDUTS NsDUTS RROTE RRDTS RDS ratD8 Wagn7s RRDTE Limes BSRRAI 1NssPa0 Breas Handbook of X-ray Photoelectron Spectroscopy co. cuoHy, CalNOon Gucn eacen, cuco; uso, caso. C50, CaMoOn Moro, cate. cucior CoFed, cureo, CuMeo, CuRKO uoAeh CufOAe) Ciacse, Cu@-ttydyquin) (Cu Sabeyiatonime CucuEAN), (CusCulH:NCONHCONH cuLMM a co Cesn cuse CaAgse cus Cubes uct uct cach Gar, oF: ons on25 ous 9382 oe a6 93611 oxo 68 9325 on7 9351 3355 9331 9332 9350 9349) 9355 3316 sa 9385 9323 oa 9326 9381 oe 9350 9x0 soa 9358 sis 9187 o18s 9187 318s sins 9178. sins or ois 3179 9169 9180 9156 sis 9160 iss vywiise AWE. Wagar Gawi7? wows ywasst vyste Gawir? WRoM9 vwuset CCDEMS2, GaWi77, Wags, HIMUZTE MSSSAi,Sebo?35 MUz78, abi, WRDMTS, MSSS#i Msssei NzKT? Wagns NzK?? wRDM79 Limos! NzKT? wRDMrs HMUzTS wuz corse? ACHTTS pose ppp80 HMuzre Nese bers yysi9 Bre Be BB? EMGK74 S78 Biswa0 Bisa Biss PesR2 KPML73. WRDM?9, Wagn7s, ‘sans, GAT? venor? RRDTE RRDIS RRD7S ‘Wagns RDS Wise! ‘Wags aw? WRDM79, VWHSEI, GaWi77 awn? ‘WROM79 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy co, 0 10) cacy CaceN aco: Ca80, CaS: Coston CuMe.o. aces EaNtoO, by 4a Dy D0. Eusd EL LiF cr Kr ng LF MF MF RHF RAF BF CF @ PHYSICAL ELECTRONICS ois 5162 9162 s166 sin sit 5162 iss ois sas 5163, 5156 9152 3165 166 180 9166 124 1613 95 2588 1613, 1694 1687 1256 1282 nso) ‘ywnise! (COFME2, HMUZTE (CDFME2: Gals? Wagn?s FMUZTE MSSSSI SchoT3 MSSS81, Wage? GW {GaWi77, MSSSBI, Sebo 73 Mssssi NzxT? Wagns NZkT7 wRDMT9 NzKT WRDMT9 MUZE HMUzrS coRMe2 HMUZTE ° SaRst0 wRDM9 NNBECS NNBFES ° wroM79 [NBKT4, MVS73 PMps77 WROMTD MVST3, NBKT4 ‘WROM7S NBK74, NSLST? Mvs73 vsrs NBR? wRDMTS BK WRDMTS NBK7S, NSLST? or: Hees MaF: NE: Ni-4H.0 Por Ze 2a AF 31.0, Gar 30 ars brs IF, 330 oF, NPs Pr Sas Yr UF UF Ue TH Hire 2 Naber NuBeFs NABF, NRF Nal NasiFe NSF KF Kan, Kats Nase Kikefe NF K:GeFs Neco Kats Nazir Kary HO Kar, NASOF> K:Ser° HO cosh Appendix B. Chemical States Tables eas (682 aso sss 927 is seas ess a2 as 859 x60 6388 eso 680 as. 451 6883 952 org 852 a3 aa ons eas 6845 53 853 6888 oes 9 asa 685.1 6857 852 eso a2 ass e460 as 5 880 649 853 x0 oars 852 6859 a6 sas0 ass a ts as e836 Woes NBKIA WRDMTS NB? Gwin Nak, NKBP?S GaWi7l, WRONTY NBR7S, SATDIS Nsusri Gawi77. wROMTY wuss sarDr3 wRDMT9 GaWin?, WRDMTS NSLS? wero CGawWi?, Wags? NBR? NBK?4, NKBP?3 NBK, NKBPT2 MeTaTG wRDMT9 [NBKT4, NKBP3 WRDM?9 ‘WRDM79 WwRDMT9 WRDMIS WRDMTS TBvL2 TBVL#2, PMDST? ravi ‘RDM wRoms NKBPTS NKBPTS NKBPT3 wRDMTS RNSTS wRoM9 WagnT? NSLST? BK ‘WRDM79 NBKIA Wag? WRDM79 ‘TRLKTS BKI4 ‘WRDM79 (NBK4, NKBPT3 WRDMTS NKBPTS 1NKBPTS WwRoMT9 NBKIA 1BCHIS 21Appendix B. Chemical States Tables MOF POF YOr Cameo. cosh vos: CRC) iooccr, CHICNBR, NIB, thn ENHBF, EuNSOF, PoiBF, PRFOBE, PKL CF uF Mae Bar: ars Mar: Sr AF cars cur: curs Cars NF Por: Zar: ine Lr Nurs Pr Saf; Ye, Th HE, 2m e239 8 ess ons 6857 ast 6852 6852 eas. 852 eas 855 a7 6353 6852 655.1 eas 6855 a7 ou 6855 90 ass 70 6265 6856 68856 eur as oss 6587 6850 6562 6558 esis 6363 6593, 6560 6570 862 6562 6555 6585 6556 86 6580 esto 6372 58 610 333, eens Wognt7 Tost Tet Beis eters WRDw9 Bkr, wrDwrs BK KEP? NKBP?3 INKBPT3 wps77 Poa ROBE RUS 10 RBH OBI NKBPTS NKBPT3 TaVLE2 age? WRDMT9 BcGH?s BOGHTS BOGHTS Bois eH 7s nw Hw waow7y caw Gawir, wRoM79 cawir? wRDM79 wRDM9 Gawi77, WROMTD wROMi ‘caw, wRDMT9 wRoMi9 wRDsT9 wROMTS wRDw79 wRoM9 wRoM79 wrow7y Handbook of X-ray Photoelectron Spectroscopy NaF, Nal Nasi, Kem NaF, Korey NaGee Nr NaS KOR KNB KEEP, pich=cr) Nrooccrs 0 alpha 20: gamma FeOOH, apt OOH, gma CoFe.0. FaCOy),- 64:0 FO, Kier Ned, KFeICN KFaCN KiFeCN NasFe{CN}XNO) NaFa(CNMNO) NadR{CN)ANO:) NasFACN)NH, osx sat 6557 6551 6560 6580 65511 553 6505 552 55 fae 29 070 709 167 7058 7010 3016 01s 7069 0 7081 7103 122 1087 7087 703 701 7105 m3 m3 72 984 7082 n08 nos 709 709 78 m3 103 ms 721 nas nos 88 7011 7085 m7 ms 7088 016 PHYSICAL ELECTRONICS wrow79 wROMTD Wognt7 waDM9 Wagnt7 wRoM79 wROM79 wrosr9 wRDM79 Wasa? wRosir9 Wagn?? WRDSIT9 LANMSI WRDMI9, MezeT7 sites sates MECCTS MECCTS sivas scr. 73, Limos Bins? Bind? cscr: scr escr scr. esc scr Mazen Mazer? WRDMT79, NODS?S Mezer? Mz=17 Mzer? Kona Mezer? ites Lines csc. Meza? Vann vana7é YNNATT YNNATT YNNATT YRNAT? YNNATT a aT rae IrHandbook of X-ray Photoelectron Spectroscopy NaFACRDNS 017 Fecos 1088 Fa1CO)4NO) 7095 KFeiNO}S:: 20 1089 FasMexCO) 786 Fact 1077 bFaCati: 139 FaCsH.COom), rons Feiphaloeyanie) 7091 FeLos Fe ras 67 16s 168 1169) mig Ga 10682 Guas 10463 Gans 10671 GP 148.6 Ge 1068 Gn 1068s GaSe 1065.2 Ouse 1065.6 x0» 10616 61205 10824 a0, 10629 Ga3a Ge 186 case m2 Gaas 88 Gans 192 GP 88 GP 193 GP 99 GP 187 GN 19s AIGaAS 90 Gase: 107 Gase, 99 G0. ms Go. m2 Go. aos Go. 20 Gada os 0s @ PHYSICAL ELECTRONICS YNNAT? ca. Boot? BeGi7 Ga sd Nees a ‘BBFRI? Gis WUMTS, BcDHTS (CDH, Nete7s Ge2ps2 DHT ‘ee wun a MSV Gs: Ges: Gen, wroms Gch er, 0 ° Nae0s Stora NeGery Nous Kioer, Oe PuGe SstoTia GeLMM WRDM79, MINN7S, SchoT32 MINN MINN7E MINTS, MINS MING esto me me MINN me scho72a MINN, LBHKT. Scho7ia, WRDMTS| Geleas: LBHKTS GeSiTeAS: LeMans Ge5sAs MNT, MINN, Tay2, ete: M81 ete NINN7B, INEN79 ete [BHT MIN ese: LewKrs ese Hewaso Ges; Tayi Ges me Ges ime Geo: Gavi Phe LBHKTA Seto Pet ima Phebe MINN PhGect ara ° HF Appendix B, Chemical States Tables 1 sao nso ° 139.0 SaRsH0 Mewe76 TERIA, Movi, Waa? Movers Movsr3 12188 TUR 12182 Movs 07 Mova73 oma Mova73, WagaTS iss Movs m13 Waga?s i202 Mowa73 12189 Movars 1462 Mewes masa ses nas ‘Waga?s, WRDMTS mes ses na. Sts77 a3 SST? 377 Wags 387 Wags Ds ° Bs MeWe7s 20 ssn 1 HKMP74, 0882, WROMT9 7 KMPTS 39 RMT m2 Mr sos KMrrs ant HKMET4 sno ses 7 KMD 310 eos? 309 SesT? os HKMETs wos SST? 23 HKMre ms HKMPT4 32 wwe as Hwwid ais Hwwvn4 aa HWwve wa ° 223Appendix B. Chemical States Tables ae Ho: arad Heat gS (cimaban Me HeOtute Hs Heb Hecis Hak: EGNCHLHEOAC CCLHgBNCONHCONH,), Hgtteibenzoylne), ui cat cal ut i a Nit Nik-6H0 2ah Za alo, uo, His HslOy a icy Casha RbSbok NaNO) 0 224 167 a2 1010 8 1002 1008 1007 ‘010 tot 1012 1008 1013 1013, 1013, 1a 1596 a3 6199 62 sie ens 6137 6189 94 6192 sis 6190 6198 6190 619.1 6190 618 sia 6197 eas 40 e.1 exo a3 aus e225 sis os ous wRose9 SaR80| SaRato, NGDSTS ° ister2, SATOTS, 'SMBMI6, WRDM79 7) NssPa0 satDrs sATDr3 SATDIS SATDTS 1NSsPe 1NssPa0 vs wai Foam ° ‘Shes MvsT3 MvsT3 Mvsrs MYST, Sher76 Mys7s awn? Gwin? SATDI3 awn SATDT3 FATT awin7 NZBs Gwin? SATDT3 Sher¥6 SherI6 ‘Shes Sher6 ‘Shes ‘hers BoHrs Tics NzB7s Handbook of X-ray Photoelectron Spectroscopy LNW TRUE Lines) EPMteP ic PMP) wan LiMo) FaMods IMNN ut Al cat cu Ni Za, Inds in it Ions is uP. tes (Hopi, Cus Intcaehs Boland CChIRELN Beard MnP cular InMNN nso sb re ue Inte, 6193 zor 6192 Rigg? 6196 FATT eit cab a9 ABIL ans Beva9 6193 ewsr9 si70 wroM79 5068 awn? 5070 Gawi77 sort oawi7s S013 Gawir7 5060 Gwir? ano ° a8 Beat, Hega82, WROMT, VATS, LAKTT 4856 Hoga aa IMNNT9 as Berd, RSD aus wRDMT9 aus wroMrg aus Waga77, MSC 73 ‘460 WagalT, MSC 73 439 Barr ‘4460 ‘aga? 4485 sc7s as cd 4450 ‘Wage? 469 MSCTS 49 SCT 6s Wag, MSCTS a3 Waga7?, NGDSTS, Ber sas crRseo aus LAKT?, Msc73 450 wRDr9 ss Wagat7 4447 wuibet asa MSCS 4457 ATT 4452 A? 459 BAT asa AI? 458 TT si04 wROM79 aos PVVAYS, KISC8O, LAKT? ao18 IMNNTS soso Bera a0 Kisca0 4089 WRDM?S @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy Inge, 083 hs. 3073 ial 058 ne 08 tact sous Inks 4037 nO: 4064 IxoHy 2050 (SiH, wot eat cos os 7 as 630 6 5 3? #0 os 650 KirgC01.C4 ar KtyCOuCS 630 OMEP 36 IremNPaP or TIARNCICHNH, 63.1 HCWHNCHCHNI), = 2 HCMHSNCHSCHINHDs 632 Kap * ass a9 246 ais 2930 ans ans 228 2a 2087 ams a9 2932 oa ass 212 225 mu one 2926 RO: ans AINA: Op hOH 230 Kick ma KM 207 Kock ano @ PHYSICAL ELECTRONICS ross Wage? Ween? Wagn7? Woen77 Wags Wagn? wROMT9 wagn?? ° WRDM79, BHHKT70, ERC?S Folk73 NEfTOK B61 NETS Cote Leber? KSPB76, NSBNT? NseNr? RCTS RCS KsPa76 NSBNT? KSPB76 KsPa76 Leper Fok73 Neba72 eB? Nefrs ° ° [SMKMTT, Feks77 vs73 1MVS?, WRDMT9 MVS)3, NSLST7 Wagnrs pwbs77 vst Vann sors NSLST? vsr3 vst Mvs7a Mysr3 ACHT?S AcHT?S ‘Nsspso NFS? FSS? WPHKRD [SBN LeBH72, Cote? oer? ColeT2 Lefer Keck, K:Recl KRec, Ksech Kwon Kit KiMoce KS, KaF.-H.0 Kir, KR, Kar, Kane, KiCaCN KCN KiFECN) KMn(CN KiFEICN) KMD KicNO KPUCN 31.0 KRCN.C:- 3.0 KSCoSCHCHNH;COO), KLMM iF SOF, Kr3a Kein graphite Lax le G@ GH Lao 120, Lada ls 120 Lato, Lite LF Gb ins pe uel Ge GOH sco. tiPo, Appendix B. Chemical States Tables ams ina 237 ons 3 a0 m2 37 ot 242 231 26 os 237 a2 219 29 ais 27 ai a3 ama ma 207 2301 93 so ts8 359 anes 51 237 1s 013 1017 586 sur 382 S68 560 st 586 8 582 ssa Cote. LeBir2 CaHe?2 veer? Colte?2 Lear NSBN7? HUGH Wagn7? KBP? TRLKI3 PMpsr7 KBP? NKBP73 Vann?6 zetia anus Varn7s Vann76 Vann SENT caLers| caer SSEWI9 wRDMS Wagnt? Wagn?? ° sesc82 SeSeR2 ‘WRDM79 Sai 11st2, KEMLS SaRa80, NGDSIS, HoTA9 Hoth ° KLMPT3. CSG? soRs?? Mysrs CSFGTS, MvS73 MST}, WRDMTD san csra7 csFG79 versAppendix B. Chemical States Tables Handbook of X-ray Photoelectron Spectroscopy Luor 336 Mvs7s Mats e226 scr Liao. s12 Mvs7s Mno aaa oats Lic. sr ACHT?S Mao 0s onni76 fae A acura Mao oats ‘AGkiT6,CSCT2 LINBO: ry suo79| MnO» alpha ound ‘outs MaOs ote scr. a Ma:05, alpha oat onnite le 3 ° MnO gamma ons, owns Mao. ena oun Ladd ‘MnO: oa WRDM?9 we 1962 KEMLY4, LWFTS MnO, beta oi ons to 1960 ‘Saat, NGDSIS Ma0z ons ‘aki, CSC72, NGDSTS M008 oar nts Me 2p CoMinsOs wats ounti7e Me 8 ° CubinsO« eto onsti7s Mp 96 HASTS, LMKITS, HEV 7, MnCri0. os. ons Fagg, WRDM79 MSOs 49 Limos Meso 98 FWEATS KMn0. 70 mer . MiB 306 WEATS MaxCOho eas. vwver Mere 310. ‘Wagndd BitliCO), et vwver Mo 508 avast Bae(COh o17 vwve7 Mg(O#: 45 HNUW7Ba BeMinCOMPhsP) oats, vwverr Mea. 504 HNUW7 BrMa(COWPOME)ye 641.0 vwvert Tale, MBSWOOCOH: 505 WPHKE? MriCOn(PEsPh 07 ywvsT KoMalCNs 97 Van Mg Is NaMa(CNe 633 ‘Yana75 Me 13031 HAS1S, LMKIS, Pugg?? Mais ess BCDHT3, CHT Mgt 13030 FWEATS MaiCOpsCsH) 408 cows Mei, Boao FWEAIS Mn(CO)¥CH) as. cust MF 15050 Wagnto Mg(orD: 027 HNUW78 Ma LMM MeALO. 040 HNUW7b Ma 76 Vay Mg KLL Mo 3d Me 55 [LMKITS, SRHH8, WRDM79, Mo 20 ° ugg, EV 77 Mo a9 NyMas0 Mpc ns7 FWEATS Mo 280 (GiDe75, WRDM79, COR 78, MpBis nse EWFAIS (GrMat3, KBAW74, WoTA80 Me 172 ‘Wasnt MoB ms ‘MECC? Take, MpsiO,0(0H 11803 weiiks2 Mobs m3 Bens Mosc ma Bewhis Ma 2p MaSis m7 WPHKR? Ma 6390 ° Moser 283 Gears MO oat ° MoS: 290 PCLHTS, Gears Mn 6388 ‘LANMBI Moss 296 ‘SSOTSI, SiEaTS Mn 6390 ‘wRDMID Mocs 2300 Gest Ma oats Gor Moc. 2306 Gears Mas, 403 cscre Mocs Bio Gest, SweTt Mss, beta 6108 okiI6 MoO: 2293, 'aRaBD, CORTA, Mrs, alpha ea ‘Aok76 (Ge75. KBAW4 Mas. ort Limos Moo 2326 (GPOGTD, KBAWT4, SaRa80, Mal ous. ‘Aoki76,CSCT2 GDeTS, CORTE, GeMa75 MnBis 6220 ‘Acki76, €SC72 Mes 226 wroM9 MeCl: eo ‘noki6.CSC72 (HaMoo. 22 SwHert MnF: 626 ‘Aoki76, CSCT2 ‘ALiMoO.)s ms Pos ‘AbiM004)s 233 NFSE2 226 @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy canto, Contd, Caateos Como, Kao. NaAoO, Nesto0.-2140 INHLEMO:0; ISH Mo 4.0 CeMloOe Cuto.o, RhMoOs CEMoWNO} Kio lise BradosBn) ster): CuMoxEP, CChMetPaPMe) mer CuMosaPMe| (COmMOPREY (COLMA CiMeCOnPr? CiMotNO HPN CiMetNO}seCN CiMeteyshs CuMospysy. CeMspyei BradouBeipsridyy Csstagpyidsb CuMedtipyeid) CuMcORpyel) CiMoOstipytidyD «Couotipynds) ChaMoxPhPe CuesBrNELN, Be(MogBAKELN) BuNMotCOs. (BuNi Mod BuNhMorCle ICtioMotCOy. MoOsaces Nis NH SH cn aN Gen, sx @ PHYSICAL ELECTRONICS ma maa m2 m7 aa ma ans 27 as as ais m2 ams 219 mar mea mar maa ma za m3 mas 203 mis Dos 29 208 97 2296 20 Bis 223 263 as 292 a3 ans ao nes ama a0 sa yy 389 ara 3967 a0 era 3962 3969 NFS#2 GPDGIP.CiDe7S, AMALIA TvG76 HMUz7S NESE iDeTS, FORD, Suter, NSLST Gems AMFLIS cas Muze wMuz7 NeS#2 Neere HUGH ewe wart? Lebar war? HW 69 LaLa79, RNST3 R076 STABIS. Hemas0 TuR8 STABIS STAB ww BN SiN SANs SPINE sxc CaRNNN) KINENN") KINN'N) Lion) LiONNEN) NaN" NuIN*NN') NuNN*N) NaNN'N} RDINSNN*) RDINN'N) KSCO{CN KSCACN KiFeCN KiMa(CNie KCN KiFeICN KAV(CN ie auc NuFe(CNivN"0) Nua(CN*)4NO) Nua(CN}N‘O: NARACN")NOS KCN KCN KCN NacN arc (NtLs0, NeHuNOs NHHUNO, NrHANO: NHLSO. NiH4SO. NH\OHC, onic NH,OHC, joni NHSSOs NaNO: KSCN KOCN KOCN NRF. NO: NaNO: BuNOn: caNon NO, NHLN*O; Appendix B. Chen ser 3081 59K) sos ae 22 45 rary 307 031 sas 001 a9 404s 34) ‘ns m6 6 wal 3583 3040 a8 oes s18 4027 aoe 2083 3966 ows 5963 208 a2 03 013 “019 a3 aot 033 “oir a9 wa «i 303 ya ser9 ann 0x9) 4039 407s 4080) 4012 073 sage murs Fiwers Ruse SGRST2 SGRST? SoRST2 soRST? SGRST2 SORST2 HHD69 sors72 HED6® SORST2 SGRST2 Nann76 Vann76, 271 vann7s vana76 vans YNNAT? Vann7s Vaon76 YNNAT? YNNAT? YNNAT? HnI68 YNNATS Seon Vann Kaen ‘Swalts ‘Swag, BCMTS rev iN F689 Fok3 6s Fok?3 HE tes HE R68 Fok3 RAST HHS, Liters BTEn cuswes cuswss NSLS? TEN al States Tables 227‘Appendix B. Chemical States Tables NHAN*Os NHN-O: NaNO, NaNO: NiNOns “640 PoeNon: SAO KRNO. K:RNO KicaiNO>e KutNO>. KiRMNO: MoClsNOh K.03NOKC, K:RUNOM, KRagNO)Brs RMANOXC (Coeconno FaCO}NOn CopitnCls NANI MBe Ni COM PANHSHANOD POND PratyCe RANE CS Mew MewNCI MenNCI Euncl EQMHCL EGNHHSO, Bo BuNHHSO. BusvHSO, EN: NEBR, iwc NHC NIGBE: Ht Git Giinec CoN, Hetanetyleneetamn Phen cet Pant: MeO OPINMes> PINs (Cyne HET Hyde ‘Cyacine HMC COOH ionic HNCH:COOM) ionic 00 405s 1s sons 070 076 072 ‘os 2007 047 082 soar ws rr as ams 0320 0190 40229 ‘010 ‘e010 39090 0400 ‘40020 ‘oo.10 10 40150 0230 40140 40129 010 401.0 4220 39890 m1 0080 01.0 40190 398.80 3.30 0100 0140 33940 399.20 0010 3990 03.00 398.10 39830 10 0000 00 0070 69 Bew7s Mio, Liners rer? Tek NzB78 TUR cuswes SNMKTE SNMKTE NBMO73 SNMKTS SNMKTE Nees Nee78 Neers Nef78 Nef7s BoGHT2 BeGH72 YNABI7 NzB 78 NBT [Nefe78, CMHLTT [Nefe78, CMHLT? [Nefe78, CMHLT? Nefe78 sacri EMOKTS Liners EMGKTs Liners EvResl ners EvRes! EvResl ReGH?3 BoGHT3 Swaine EMGK7s, BYE 77 eons Liners BoGH?s HH 69 BeoH?s Liners ines eka? Liters ines wes camry SSEWT9 Liar ‘Yosars Yess Handbook of X-ray Photoelectron Spectroscopy iCH:cOOH, H:NCHLCOOH LNNCH,COO ionic EICHNH-COOH HN(CH),COOH CCHCHNH.COOH MeC=NOHC=NOHMe Nidinetyigyoxines (Cu Sacyaldoxime CucG-ryronyguiao: S-Quinline!| CACORE: N(EOSiCI NEO) SiH Moptine Morpine W380. Nats mci Ne Na Nat Nabe Nabe cl cl mci ct cl MF NF NeCOs NucO, NaPO. Nao, N28: Nass, Nas, NaseOs NasteO, Nas NaPO; NaPO; deer wesars now yess ano year Sonm0 vasa aio YSABI, ROPERS dos0 Lran aoa Sa, NaMora 399.20 rar? sma Suite ssa LRN, 69 eo Biers no hers 599.10 saxs7r on naa Seonn Une ios ies ‘ans Stra port Yona ane Nase 03 Bore ams ‘sire ao otto 395 beoin ans Gener 08 Guer seas SCKKS oa SeKKIS ° ° Basis uM wan Wants wwe Wags7s soso oxo NSU? Hobs wags Mv73, NStsT7 ions ‘wrowis ton fupost tons ‘wabsto tons Seite tons Waens ton Wopns toni was tomas onss font vss font Nits, swima, MDS tora Mss tons GND @ PHYSICAL ELECTRONICS YosarsHandbook of X-ray Photoelectron Spectroscopy XetaF: Nate. Nazis Xa Nath XBR, Saber Sole x0 ss00cH macs. NaAISiOy, aie sdroxysoalie| Nuri Mol Seve A Mal Sieve X Mol Sieve ¥ NaOae NOae N200CCHSSH N208Ph PANSOCOCMe=CH) Na KLL Mt Nar Nc @ PHYSICAL ELECTRONICS ons 00 10783 10708 rons 1077 1077 107s ona i079 79 10709 ions ions omit 17.0 10709 10713. ona 10718 won? on wom 10019 ios tons om ios 077 1719 ton ons tom 10708 102 10705 074 wns 10723 0726 ort ion 0712 0713 10722 943 9943 sous sia 5908 903 00 wwsr Swit Swit SGRST2 Wiagn?s Wiagn?5 Swnff2, OMD 79 WRDM79 Wags acHrs Wags Wag? Nsisr? Wagn?s WwROM9 Wagn?s Wagn7s WRDMT9 KBP? Wagn?s Wagn?s NstsT7 INKBPTS ‘ages Wagas Wages NKBPT3 Wagn?s KBP \NKBPTS Bss015 ‘WRDM7S woke? wPsKs? weaKe? wPHKE? weaker wake? aga? HDD WRDMT9 WRDME9 HDDS Basis KLMPr3 SRHHTE wRDMT9 Wages Wagn?s sGS070 3H0 Nasife Nar NaAlFe NBR, No Nx0OcH Nude Mol Sieve A Mol Sieve X Mol Sieve ¥ NaOae Nr00CcHSH i035 No3a Nb Ny Nbites Nose, Nise: Ns: NaN Nar, mck Appendix B. Chemical States Tables 9586 9999 9607 sont so08 9898 oo10 50 8 01 998 96911 5698 or98 5898 9893 e98 3506 via 9882 10 9902 003 9196 9507 5909 04.) oer ona 087 880 oe 35938 9098 5905 ee oat ars 9999 5508 999.7 aos 2023 2m? ams 2038 2ns0 aos 2017 ans a0 2080 own Saar Saown sea wos wens Noms wees soir soit sone woes was wes wens Som Waoits wae was ies wees Wists aan was Whose Woes wons wens was wees Wrens ans waosts wre won won wants waa wnows ° MSCTI. NSCPP, WRDM79 ans Bans ants ants MsCTs bans MSCTS MSCTS 229Appendix B. Chemical States Tables mo. Mo. Mo. bos Lixo, KNo, CANO carey asso; RAND. CHNCIBO: 8.0 CUeNCI XEN: BrsNCHxB CONC aA AP ClINCInMesSO}. Na 3a Na Naso: Nada NAO, Nets ‘Nein gaphie Nein Ag Nein At Reinga Nein e NeKLL Nein e Nip Ni io N N ™ NbY Nasi NSi Ns Ns NS Ni6H40 Nay Ni Alo, No No No Nio, ams 2037 aos aos aa 2068 amo 2067 2065 2007 2087 2087 206 00s 9920 08 03 as16 8622 a6 sso 27 a8 8527 8527 4528 3827 8827 8530 535 528 asi2 a8 5553 8567 a1 8535 8503 as83 8573 Par ahs Ferar7 ‘B76, MSC73. FCFGTT [NFS#2, NGDSTS StH079 MSCTS Bans Bans Bans NESE ews ew ewer Bewa79 Bewy ° ‘Sato cattrs cure itis Wags Wagar ° 2 Lana ALMPR Pee WRDMT9, ShRe79 wwcre ‘ooMe2 come ‘SaRETD ps7? Netie7s Nar ‘TRLKTS, KIHeS3, YYS18 sis? ‘wROM9 S77, KiHeS3, LFWS7 [NFS82, NZBTS,SRDT9 KIWI, MecoTS| Natiers Handbook of X-ray Photoelectron Spectroscopy Nios NuOH NOs: NANO: 6440 NiAiO. NAO. Naso. NiCIO.- 6840 NiFe0, Nikko. No. NisiO; wo, NaNO: HO K.NF NiCO}. BeNiONH NaNty ClO: Nusa NWOAe 4840 NxCaHt) Nic) CNPP CNP CNP Ni(dimeiygbyoxin) icing NusPty ass 8856 a7 8869 558 asrs 8512 Sa 8559) 3568 8565 ast 5554 3610 S548 559 559 8542 8568 8550 ass as70 8550 857 8585 8567 559 8 347 2552 346.1 462 eet 10 sa92 sas 313 10 Su ‘309 319 3318 $330 383 317 5300 594 Kiwis DPST?, LEWS79, MeCo7S TRLKI3 Nzo7% SOR 80, LFWST9 Ngiers Lews79 Naas MoCo7s ‘NFS2 ShRE79 sRo79 NpHe7s NZBTB TRLKTS Bocir2 nae Nzwe [NZBTB,TRLKTS NzB78 ‘BDH cag, TRLK?3 BNSATD Nae STHUTS NZBTAYovsBI NSWUTT, NZB7B BEER? vst Yorast TRLKTS Fano EMGK7S ese wrpwrs iI74, KOW76 ° ‘Sco ‘Seho73, SRDSO ‘Nef, SDRED, ‘BODTS, 250579 ‘Tayi, WPHKE? wPHKs2 Bars, WPHKA2 “Tayi, MINTS wzRsd Nops7s nya [NGDS7S, NESS, IGNTO Nops7s, secre nya @ PHYSICAL ELECTRONICS‘Handbook of X-ray Photoelectron Spectroscopy co 30 oo: Ces eos ods coi. Coo. aio, 00 G0, x05 co cos 0; 50. Go cao @ PHYSICAL ELECTRONICS 213 52 5303 sua 5192 3239 302 3296 07 501 10 sus 3293 $902 srs 50s 03 5188 soa 206 5096 598 5300 5298 5308 200 S32 08 99 5198 5303 5305 286 313 9s 00 12 sl 5297 3295 396 300 596 S31 5239 309 sas soos 597 56 (CBR76, GPDGTS, HSU76 'BOD7S. NFSE2, NGDS7S "HoThE0, DPSTS, ‘WZR80, BDFPBI NaDs7s KK esis Yaps0 Yabo HMUZ7B, MSSSBI, BBO72,Seho72 MSSS81, MeCo75, HMUZTE, RBOT2 Scho?30 NODSTs, W2REO, KITS, Lino HsUt6, LST? Meer? Mezer Mezer? Mcze7? NODSVS, Shore, ‘W2R80, 25089 | INODSTS, W2REO NGDS7S, WZREO 1NaDsis Sbe¥5 Nabsrs Nass [NFS#2, NGDS7s avast wze80 onrrs ontrs ons [NGDS75, WZR80 ons POL (CORTS, KBAW?s SaRa8D, KBAW?, MUZE. CGRTS sis coPsi Neos Noo: oO? Nas NiO: No 0 iting POs (edging O} PDs (oonbdgng O) Os (nodes 0) BEER Hy i 3E323 SERREEES3 Appendix B. Chemical States Tables sas su 3307 5306 O18 5096 sua S26 336 5343 5289 S316 94 509 sus sas sa 290 5293 5093 58 sia 5301 S19 5304 S94 04 5307 300 5300 50 a3 55 328 $329 S325 5327 2 S01 5308 sx0s S288 ss 3302 500 599 sua 5089 5305 5300 5299 5305 sina NODS, NFS ) Sako Sako KIWI, Neve DPS77, LFWS79, NESS, NGDS'S, SRDS, W2RED Nast emp Nops7s Mp7 os wzeo KOW?3 Zier kow73 Here kow7s TUR Kowns Sak SaRstO MELT ‘BHUSL ‘BHU (CMHLT7, NES#2 MWLETS WIT, MeGi2, Saat Kaira ware NODSTS, W780 Bards, KMHTB, NODSIS xis NSLS77, SRO79 wens? wake? wraKer wPHKR? TLR ADPST? AADPST7, LAK”. MWLETS, ‘NGDS75, TLRTS vaveto SaRet0 SaRa80 GBPa, sues Nobsis MWLF78, WZRHO, NODSTS MsssBi Msssti CORTE KKLSS BCM7S, KKLS3 [NSLST7, NODS7S. NESK2 oka 231Appendix B. Chemical States Tables ‘AMOHs, bayeie AUOHs gitbsie ‘AIOOH,boehnite CoH; cron, cuoH; Faots FeOroH FOO" wae KOH oH Maou, MOH NaOH, APO, CaO. Cuno, KPO, KPp; Lavo. APO; NaO. NaROr ering 0) [NuF0s (oonbridging ©) [NaPOs (ing 0) [NaPOs(nonbidging ) BuNo:), CuNoy KNO, PoNo.: BsS0, 3:50, caso, Cx$00 Fes, Kiso, Nisa, FeSO, 250, Nasds NaS, P50 P50» 5:00) Co, C0; aco; aco; Liscos 22 sx0e ss 502 sm9 sia as Ss 3312 3312 S312 313 5301 S312 sis Sue 512 509 sus B13 sus 5x02 5308 $301 S13 317 sas sat sus ss saa $330 5336 5227 3227 518 sus sm0 st S324 saa 21 Ss 5x25 S12 18 508 Sou 5306 sua S318 sata Ss SIs (Cona76, KSA NFS, NODS7S, NSLST? [NFS82, NGDSTS, NSLST7 SehoT3, WZRHO. 250579 Nobs7s wr7eeo wens weikeo Tayi? HSU ests Mssssi HSUT6 MezeT? Mezer? wz ik73 ccsF79, wzns0 HNUW7 Bases Laws crRSBO vst Mvs73 srs Mvs7s Mvs73 Mvsr MVSP3,GMD79 comp coup GMD ‘amps ccuswas cuswas NSLS Ture cuswss wzeo ‘CLSWa3, W2RED PSI Limos ware [NSLS77, Nees Ziters fet wzReD wz80 Zne7s ze7e nOW7s cuswss CcLswas, W280 Hows wees csFa79 Handbook of X-ray Photoelectron Spectroscopy Neco, cio, ra KCIO; Lica, NaCio, RRCIO, SiO, kate ‘AjSiOs multe ‘A’SiO»simanite ‘AbSiOs slimanite CextSi00): Cosios NuSiO* SHO NuSi0s SHO" N.SiO, NSO; MgSi0%s-2440 -MgSiO: 24,0" AbiMoO0» ‘AlWO.y cxcr0, camo. cawo. Bemoqainone Hydroquinone PYCOONs p04e:$40) “Medhylikcoe Rein Phenyicone Resin PACONH Os at O o oO osc, 0303 050; Ontson, Kok K:038 Koc, Koc, Koc, Kock, 050,08), ONIN OMNH NSB OsINH) AN Be UNH NSC, 040) K.ouNoxcl HOSPRPICKCO) OsCUELP S68 HHDDS!, W2Rs0 S12 w7nso 5x7 v7 sn? Asn 5323, Mvsr3 sus VST 5330 Mysr3 suas MVS. 3313 Answ7s S36 angers 33 ‘ans 19 WPHKE2 S12 units S318 wz80 sas crits sas caRins 319 LewsT9 323 SROTS 3320 canis ss canis 310 PoLi6 5320 Ners 5195 ACHTTS 508 NESE 5299 NES 3322 ovKrs sas ovkrs S318 LaNNTe sus wraKe2 sa7 weuke2 5326 WHKR2 sm2 LONE 307 ° 506 Fok73, BNMNTS 502 BHHKTO 331 Nefer® 520 sakato 27 Fok3 52 Nefe78 319 Nefere 59 ete 330 Fak73 332 CCole72 335 Lepi72 339 Nefers 552 Nefe7s 509 Fok?3 320 Fok 518 Fok? 522 Fok 33 eter sua eters SLI ete 526 tea @ PHYSICAL ELECTRONICSHandbook of X-ray Photoelectron Spectroscopy OsCLAPHP ME tans (OnCiMPHPME) mer OsCTSPHP ME ans Pp ° Ped) cae cub. GaP (GaP, anoscaly ox (GaP. thermally ox uP Zur za APO. CsPO. KPO, KP, Lipo. NaHPO. NaPO. 5 NaHPO, NaPO: RbPOs NalPO: Po, KO, Lino, NaPO; ROE0; Pw ‘orc SPCh SPIN PhP : pee PhP PRPS Parse Papo Preah PHPBB PuPach, PRB Pest PRPSeH Psi Pass ‘Phone @ PHYSICAL ELECTRONICS 330 505 1299 100 1300 1396 1307 ty 28s 97 1383 183 198 429 12 ima 1332, 1s na naa 142, a 123. 26 na 126 143 1332 131 1383 1337 1383 13a 109 109 109 ns 12s 22 1522 120 1323 123 1u3, mu m7 LeBr?2 ° spurs Seba! NsDUTS NsDUTS ‘WeTA0,IMNN79, NIMNTE Net MINS CrRsio Ben NsDUTS ccrnsso vsr3 Bend srs MvsT3 Swift, WROMT9, WaTs80 MVS?3, GMD7B, Swi switd swift GMDT9 MvsT3 Swiftd MvsT3 Mvs73 Mvs73 .MVST3, GMD79, Bert rs) [NIMN78, NGDS7S, CFRSWO, er, GNDI9 Fives Frwes| Frwers Dale, NSMS?9, TRLKIS, GEMPI9 HVV79, LMFH0. SRHT2 MSAVT7I, OZF73 HYVD9, STATA, FWeIS.MSAV7L HVVD9, MSAVTI GZFT3, STA?S, WES MSAVII. HVV79, BNSA70 Hvv79 Hvis HVVI9 nvy7s NSWMa0 peagay? 7579 3 age 2 Appendix B. Chemical States Tables aa 143 136 1337 iad 13, 13, nae ns 1352 1330 is 130 67 135 Bia 122 nas 124 wa 1369 nes 168 1368, 1368 1368 wr ray m6 a 188 190 nag 189) Ba ia ea 1386 ie 1a 113, 1382 1389 na 1385 ima MSAV7I cornea wes a) rie) HW MSAv71 Wels Fier FiWers vers Hw Lea, sei? SRH2 Mra LM Rigg?2 Dale, STATS stave BNSATO TRLKIS ° LKMP?S srs BeP80, KOWTS, KAW, TTLRYE, WRDMT9, WaTABO HSBSBI, OCHS HsBSBI SFS7 ses” MoVs73, SFST7 ZfeT8 NeFes2 Movers KOW73, Zie78, RDM, [NFS82, NSSPAO. MoVi73 Movs BeF80 Move73 BeFI8o, KOWT, ‘TLRTE, Movs73 NSSPAO BeFI80,TLR?S, NSSPAO NSSPRO, ZiT NFSH Mova73 Mova73 Berito rerio 233Appendix B. Chemical States Tables Handbook of X-ray Photoelectron Spectroscopy Pax Peta we a vist sans ni 3st Nesp ho. ez Sta i 3a: Bw nN Sez seo rat a 3s sun 4 ne i 33s MIBK. Aas R Saks a 333 WRDWDS War, BHT, 5 72 Br WOT. Neer, Sort ook XSAN Sos WRDNS Wops | ngorso sae ea R na Guanine. por) Sty wean rawr ACHTS | neon Sai Mean Psi 0 cow | momo Sits Mean msi mS Sewe | panes 3c. Ween a Be eco | 2 jes Go Ras ms ees | a Sea Aso fe Bs kwon fe pene feces 5 ey Bo | Pa an Roars mor me kwon | rice Ey Sear wnarrs re io trcers Pao 3363 KGW7s ‘PUOH): n6 ‘Hawi? | rio. gis Kowne Rn Be Ske Nera sao Sete bn Rs Sane irae Soe Ana. gers noe me Skane | Ke 313 RAMS nc. Be Saar. erect. secre sn. Soo KANT. ret Be Wags Ene. Saal XBAMTE. Neer kaa. B34 Ger ERCCTS. eB, Borers Sts RAM Stace can Ss RAMEN Ken me Ske | tuna, Sis RAM Renton Bi Neun Conair gaa KRAMTE, Raves 12 MILT ere racrunn jus Naw bates ie Sew Cray Mis BNsATo. Pvtones mS Sas | nee sao Na Rano Br Nes, | fone jas NM R00 yea eum | ras, Si. Baer Ene mt Ste ENO: mo Sas | Pa ney Econ Ses | " srs venus waowne oman me ure reoneo Ss Mean Pew me News sono Sas Wann rip. ns ae sone Se) Wenn Corer ss maim nes Sas Mean cunsrnpy se mo Ria Mohs Sees Mean Games ss eae Sines: 33 Neri? Post remenh, Re Rat Pact vos Mae70 Oxnrn mo Rae norm ms amr a Pormiser) ms keene cs vas avreno Caren at Ra aed ms Ru a trem he ean 4 ose tree ews Bo aon trvernconte te RO 22 Sao Srncwconh. = M3 NSE | cimcwcowmh, Esa | 234 @ PHYSICAL ELECTRONICS