G 4N4001 Thru 1N4007 (MP PLASTIC SILICON RECTIFI ll FEATURES Rating to 1000V PRV © Low cost © Diffused junction * Low leakage (i 7 # Low forward voltage drop 1 Outline Drawing High current capability © Easily cleaned with freon, alcohol, Do-44 chlorothene and similar solvents Fo ef os ie * UL recognized 94V-O plastic material toned + Il 1 Mechanical Data am 2) * Case: JEDEC DO-41 107 (2.71 ¢ Terminals: Axial leads, solderable vocal be em per MIL-STD-202, Method 208 “ —_ Dimensions in inches and (millimeters) * Polarity: Color band denotes cathode * Weight: 0.012 ounce, 0.3 grams * Mounting Position: Any Maximum Ratings & Characteristics . Ratings at 25° C ambient temperature unless otherwise specified Single phase, half wave, 60H2, resistive or inductive load For capacitive load, derate current by 20% "INaO0% | 1NAD02 | 1NAOOS | 1NAODA | 1NA0OS | 1NAO06 [1NADOT | Units ‘Maximum Recurrent Peak Reveree Vollage Vanw | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Vv Maximum RWS Voltage Vaws | 35 [70 | 140 | 280 | 420_| 560 | 700 | V Maximum DC Blocking Votage Voc _| 50 | 100 | 200 | 400 | ~600 | 8001 1000 | V Maximum Average Forward Rectifed Current lw io. x _375 (9.5mm) Lead Lengths a Ta=75°C| Peak Forward Surge Current a — 8.3 ms Single Hall-Sine-Wave lest 40 A Superimposed On Rated Load ‘Maximum Forward Voltage At 1.08 DC VF 10. =_— Vv ‘Maximum OC Reverse Current @TA=25C| 5 At Rated DC Blocking Voltage 2 Ta= 100°C! 50 Typical Junction Capacitance (Now 1)Ta= 25°C | Cy | 7 15 Typical Thermal Resistance (Note 2) [Rua 26 E ‘Operating Temperature Range Ty “EB to +175 Storage Temperature Range Tere 65 to +175 Notes: 1, Measured at 1.0 MHz and applied reverse voltage of 4.0V OC Collmer Semiconductor, Inc.