“GE SOLID STATE 3875081 GE SOLID STATE ‘Standard Power MOSFETs RFM10P12, RFM10P15, RFP10P12, RFP10P15 any P-Channel Enhancement-Mode Power Field-Effect Transistors 40 A,-120V and -160V Nenosecondswfeningspaede Liner trenater en High topo impedance 5 Maly earner corce onetoe ‘The REMIOPI2 and RFMIOE1S at REPIOP18"srep-channel onnancament mo ower tle ch as switching cogulstorewtehing converters, motor iver relay arer, and avers for Nigh power bipolar Sttching tan ing high epee end low gate: “types a bo Operated dell from “The REM end RFP series wor ox de 93875081 oorsea3 o ff O1€ e833 0 t+ 39-2) TT: 39:93 File Number 1595 TERMINAL DIAGRAM P-CHANNEL ENHANCEMENT MODE _& eI] bcm AOS Asatte ea 206 siesta a *_ | IPATION@ Te 25°C... ® 1 0 w 76G E SOLID STATE OL Def 3875081 0028234 1 3675081 G E SOLID STATE GtE 18234 9 7-39 -; Slandard Power MOSFETs RFM10P12, RFM10P15, RFP10P12, RFP10P15 ‘ELECTRICAL CHARACTERISTICS, At Cave Temporature (Tc 25°C) unless otherwise apectted “J BF- RZ cHaracrenistic —jevmao.| conoiTions rPi0Pi2 repiopis — |unIrs mn, | wax. | wm, | max. ‘Drain-Source Breakdown | Boxe sa [9 Votage Gate-Thwashod Vonage a Taro Gaia Votage Dain oe =a == ‘Curent See a ” - fo f-|]- Gae-Souree Leakage Covent] lene a a a a Drain-Source On Vaiage | Vonant® =a a8 oe Tile Drain Source Oe Toon Se ole Resistance Forward Transzonductance | ant 2 [=e te Trpat Capacionce Ca = res | = iran ‘Output Capacitance Car =| 00 =F 00] oe ovoreo Transtor Cepaciance | Cm ee ‘Turn-On Deay Tine ‘ees zie) | _s0 | aatve) | 60 Rise Tine ‘ Taye) | 160 | rye) | 150] ne “Tum-Ot Daly Tine Tose “3aiye) | 208 | s38iye) | 28 Fal Time . extn) | 100 | ext) | 100, ‘TharmelResatanoe Roz | RFMTOTA, eee ae en ‘Juntlon-to-Cas tara }. sow REPIOPIS ee | eee 'SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS toms. remiopia | RFMOPIs cchanactents svmao. | Testconoimions | rrPiopi2 | rrPiopis |unrrs: sn, [ max. | aan, | ax. Diode Forward Voltage Vet Sa |S Reverse Recovery Time . bean dnte= 1000s | 2t0%e) | 2100p) | ne * Paleo: Puls duration = 300 ya max, ty eyele= 2, ww€ SOLID STATE on eff 387soan 0028235 35 3 Asoo) weve @ © SULID STAT 235 ‘Standard Power MOSFETs: . cee RFM10P12, RFM10P15, RFP10P12, RFP10P15, ee as Fs tun arvana tron ute} nav ardons ear eae -ro-tice VoL ah ences Fi +- Maximum st peraing wes ora yas. ‘aoe rowenta pat etter (a. 2-Powercasiption.casatenperatredertingcunefor Fl. 9-Typcanemmattadgetetashlsvoage a sfutonat yee ‘ln impraire fore ae Fi 4-Moymattod dant-sure on rnc ‘linen ompertr for ype. ig. 8-Typlal ano charctrite fort typesou pe 3875081 oors2ae 5 18236, ot 37-2! Snenwara fower MOSFETS RFM10P12, RFM10P15, RFP10P12, RFP10P15. FEE ecw Ri tlle ere 7 4- tomatoe vr acnin ge cua 0.7 Tpie station characteris ora ype ‘a8 Tyleleaindo-ouceonrettance as afuncion ot Fg, 9 Capastane a net fino soue valag for Po. 10- Tyla warondetnce net din ‘Pe 11 -Swtehing Time Tot Chet “39-93