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k ⋅λ 3 IDC
5 nm
α-NbPO5
cm-1 [Eg(ν6); vs], 399 cm-1 (B1g; m), 519 cm-1 (B1g; m) and 639
cm-1 [Eg(ν1); m] while TiO2R exhibits bands at 143 cm-1 (B1g;
w), 447 cm-1 (Eg; s) and 612 cm-1 (A1g; s), assigned to phonon
lattice modes (where: vs, very strong intensity; s, strong 100 125 150 175 200 225 250 275 300
Raman Shift (cm-1)
intensity; m, mid-intensity; and w, weak intensity) as shown A
Figure 6. Raman spectra of TiO2 obtained via decomposition of (full
in Figure 5a. Band at 144 cm-1 is intense and no peak of α- circle) free Ti(OnPr)2(hex)2 and (open circle) Ti(OnPr)2(hex)2@α-NbPO5,
NbPO5 host suggests the formation of TiO2A phase at 1000 oC in the region between 100-300 cm-1 for analysis of band width of the
for 8 h byRaman band at 144 cm-1 [Figure 5b]. Role of the [Eg(ν6)] phonon lattice mode of TiO2A. [1].
template is important in the structural phase of the TiO2
nanocrystals. Table 2. {I[ν(Nb=O)805/I[Eg(ν6)144]} ratio, position and FWHM of
Raman bands of the [Eg(ν6)] phonon lattice mode of the TiO2A for:
[Eg(ν6)] α-NbPO5
TiO2A@α-NbPO5 from 10 IDC, TiO2A@α-NbPO5 from 5 IDC and
TiO2A
TiO2
R TiO2A@α-NbPO5 from 5 IDC+5TT. Reference[1,2]
Relative Intensity (a.u.)
{I[ν(Nb=O)805/I[
[Eg(ν1)] Position FWHM
System Eg(ν6)144]} (cm-1) (cm-1)
ratio
(a) TiO2@α-NbPO5
1.7 147 48
from 5 IDC
TiO2@α-NbPO5
1.5 146 40
from 5 IDC+5TT
(b) TiO2@α-NbPO5
1.0 144 26
200 400 600 800
-1
1000 1200 from 10 IDC
Raman Shift (cm )
Figure 5. Raman spectra of (a) TiO2@α-NbPO5and (b) TiO2@α-NbPO5
with additional thermal treatment at 1000 oC for 8 h. [1].
(3 IDC)
For illustration, Figure 6 shows Raman spectra of TiO2A
(PVG)
nanocrystals. The [Eg(ν6)] peak from TiO2A changes from 145
Relative Intensity (a.u.)
(5 IDC)
cm-1 (free) to 148 cm-1 (inside the α-NbPO5) and line widths 10 20 30 40 50
modified from 19 cm-1 to 26 cm-1 suggest a smaller 2θ (degrees)
(7 IDC)
nanocrystal size L when the TiO2 is prepared inside α-NbPO5
(111)
compared with free TiO2 (600 oC for 8 h), which presents L = (220)
32 nm for TiO2A and L = 18 nm for TiO2R. The stabilization of
(200)
TiO2A in α-NbPO5 depends on interaction with the surface sites (10 IDC)
of the pores of α-NbPO5. The smaller the L, the larger the (Free)
Figure 8a. TEM image of the pristine PVG matrix has a 452
different image (Figure 8b). ω = 463-185/L
Spanier et al
2
400 420 440 460 480 500 0.0 0.1 0.2 0.3
Raman Shift (cm-1) 1/L (nm-1)
Figure 10. (a) Expected Raman profile for the T2g mode in CeO2
nanocrystal. (b) Raman frequency as a function of reciprocal nanocrystal
size 1/L for CeO2 nanocrystals.
04 IDCs
the dispersed nanocrystals are formed on the nucleation sites
05 IDCs and they remain anchored to the porous matrix. The exceeding
07 IDCs interfacial free energy is minimized by nanoparticle growth
10 IDCs (forbidden coalescence) instead of creating new nucleation
Free sites.
320 400 480
Ramann Shift (cm-1)
560 7 CONCLUSION
Figure 9. Raman spectra of CeO2@PVG obtained with 3, 4, 5, 7 and 10 CeO2, TiO2 and SnO2 nanocrystals have distinct size
IDC. The Raman spectrum of free (outside the matrix) CeO2 nanocrystals controllable properties prepared by metallo-organic
is also shown. For better comparison, the spectra are normalized to their decomposition, bottom-up approach in nanotechnology. Size-
maximum intensities. [2] induced Raman spectra peaks of nanocrystals by phonon
confinement model supports the average nanocrystal size
The TEM and Raman spectroscopy indicate strain in Eq. (4).
measurement in TiO2 and CeO2 nanocrystals based on size
Linear chain model describes the effective phonon dispersion
restriction imposed by the pores and anchored through Ti–O–
relation and behaviour of the T2g vibrational mode as ω(q)
[ )]
Si linkages. Space restriction and chemical anchoring
( )
given by: ω q = 464 − 32 1 − cos 0.5411q 2 (6) ( properties prevent the coalescence process, thus allow control
The phonon dispersion is responsible for involving large q of the nanocrystal size via a linear mass increment.
wavevectors in the light scattering process. Figure 10a we plot
the expected Raman profile of CeO2 gives nanocrystal 8 REFERENCES
1. Mazali, I.O et al. Journal of Physics and Chemistry of Solids 66 (2005):37-46.
diameter as a function of the number of IDC. The nanocrystal 2. Mazali, I.O et al. Journal of Physics and Chemistry of Solids 68 (2007), 622-
average size versus the number of IDC presents a linear 627.
Semiconductor Oxide Nanoparticles
A.Sharma*, A. Sharma**, R. Sharma***
*
Electrical Engineering Department, AKG College of Engineering, Uttar Pradesh Technical University,NH-24 Bypass,
Ghaziabad,UP India;**Nanotechnology Lab, Electrical Engineering Department, MP A&T University, Udaipur, Raj 313001
India; ***Center of Nanobiotechnology, TCC and Florida State University, Tallahassee, FL 32304.
for n = 1,2,3…………..(Eq.2)
Nanotechnology defines as the creation of functional materials,
devices and systems through control of matter at the range of
1-100 nm scale. The term ‘nanosemiconductor’ covers metal where kn is the allowed wave factors and kn = n / L. When
oxide and hybrid materials in one dimension (quantum dots this simplified solution is extended to a semiconductor
and thin films etc.), two dimension (nanofibers, nanowires, nanocrystal with a size close to the Bohr radius aB, the
nanotubes,etc.), and three dimension resulting expression for the energy shift from the ground state
(nanoparticles/nanopowders, nanocapsules, fullerenes, of the corresponding bulk materials is:
dendrimers, molecular electronics, nanostructured materials,
nanoporous materials etc.). Due to their small grain size, these ΔEn = n2ħ2π2/2m*a2 (Eq.3)
materials exhibit unique mechanical, chemical, physical,
where a is the size of the nanocrystal, m* is the reduced
thermal, electrical, optical, magnetic, biological and also effective exciton mass which is defined by 1/m* =
specific high surface area properties, which cannot be found in 1/me*+1/mh*.me* and mh* are the effective mass of electron
their bulk counterpart turn define them as nanostructures, and hole of the material, respectively. The Bohr radius of a
nanoelectronics, nanophotonics, nanobiomaterials, semiconductor can be obtained from the dielectric constant ε
nanobioactivators, nanobiolables, etc. Metallic nanoparticles and the reduced exciton mass m* : aB = εh2/m*e2.
Thus, the band gap of the material can be engineered to a
(Ag, Au, Ge, Mo, Si, Pt, Pd, and Ru etc.), semiconductor metal
desired level by changing the size of the nanocrystals:
oxide (Al2O3, CeO2, CdO, CoO,Co3O4, CuO,Cu2O, FeO, Eg, nanocrystal = Eg, bulk +ΔE =Eg,bulk + ħ 2p2/2m*a2 (Eq.4)
Fe2O3, Fe3O4, Ga2O3, Hf2O3, In2O3, Ln2O3, MgO, MoO3, The band gap energy increases with a decrease in the size of
MnO2, Mn2O3, Mn3O4, Nb2O5, NiO, PbO2, Pr2O3, Sb2O3, SiO2, the nanocrystals. Since the optical transition is directly related
SnO2, V2O5, WO3, TiO2, ZnO, ZrO2, Ln2O3, LnVO4, NaYF4, to the band gap, it is possible to tune the absorption and
NaYF4:Ln NaLnF4, NaLnF4:Ln, LnPO4, LnPO4:La-Lu, photoluminescence wavelength of the nanocrystals just by
semiconductor quantum dots (AgS, AlN, CdS, CdSe, CdTe, manipulating their size. Semiconductor metal oxide
CuS, GaN, GaP, PbS, PbTe, ZnS, ZnSe, ZnTe etc caught nanocrytals show distinct properties shown in Figure 1.
Figure 2. Scheme showing the steps used for preparing the
nanocrystals inside the porous hosts using the metallo-organic
decomposition method (MOD). Each cycle is called “one
impregnation-decomposition cycle – IDC”.
3 STRUCTURE OF NANOCRYTALS
4 HYBRID NANOSEMICONDUCTORS
5 EMERGING NANOELECTRONICS
Rutile
6 CONCLUSION
Relative Intensity (a.u.)
(101)
Rutile
(a)
(101)
Anatase
(111)
Rutile
Relative Intensity (a.u.)
Rutile
(b) (c)
synthesis of nanosemiconductors. A technique is reported
(004)
Anatase
(b)
for CdTe and Cd1-xZnxTe (x = 0.04—0.1) nanopowders
(c)
consisting of 8-10-nm particles for hard ceramic materials.
(a)
20 30 40 50 60
1D nanomaterials such as nanowires, nanotubes,
2θ (degree)
20 25 30 35
2θ (degree)
40 45 nanomicelles are excitements.
Figure 6. (left) X-ray powder diffraction measurements of
SnO2 nanoparticles. (a) SnO2@PVG, (b) SnO2@α-NbPO5 7 REFERENCES
obtained with 10 IDC and (c) free SnO2. The solid circles 1. Mazali, I.O et al. Journal of Physics and Chemistry of Solids 66
identify the peaks from the rutile SnO2 phase taken from a (2005):37-46.
crystallographic database. (Right) Powder XRD patterns of the 2. Mazali, I.O et al. Journal of Physics and Chemistry of Solids 68
decomposition product of free Ti(OnPr)2(hex)2 at (a) 500 oC; (2007), 622-627.
3. Sharma R et al.
(b) 600 oC; (c) 700 oC. Dotted and dashed lines stand for TiO2A http://www.scribd.com/doc/25799862/Biotechnology-and-
[58a] and TiO2R [58b], respectively [1]. Nanotechnology
Semiconductor Nanoparticles in Photocatalysis: Emerging Art and Perspectives
A Sharma1, A. Sharma2, R. Sharma3
1
Department of Electrical and Electronics Engineering, AKG College of Engineering, UP Technical University,
NH-24 Bypass, Ghaziabad, Uttar Pradesh, India
2
Department of Electrical Engineering, MP A&T University, Udaipur, Rajasthan, India
3
Florida State University and Innovations And Solutions Inc.,3945 W Pensacola Street, Tallahassee, FL 32304
1
Adhar Sharma: Paper is an undergraduate BE Electrical Engineering project
V·106, M/min
6.0
particles. Different schemes explain the photoinduced
electron transfer in following schemes. 4.0
φ = φ0+Δφ φ = φ0 2.0
CB Δφ CB 0
3.0 4.0 5.0 6.0 7.0
φ0
W ~ 100 nm 2R, nm
Microcrystal Nanocrystal
How to increase the efficiency of the photocatalytic systems
based on the nanocrystalline semiconductor
photoelectrochemical systems?.
Scheme 1. Electric potential change on the semiconductor- Main choices are efficient spatial separation of charge
solution boundary for semiconductor micro- and carriers, minimization of the recombination losses in
nanocrystals. semiconductor NPs, and suppression of the secondary
reverse reactions.
E, В
ECB A2/A2•–
E* (i) coupled semiconductor nanostructures with concerted
ΔEB band energies, (ii) metal-semiconductor nanocomposites,
A1/A1 •–
Te ΔEe and (iii) coupled nanostructures comprising a semiconductor
EF and a conjugated polymer. The photocatalytic systems is
D/D•+ based on mesoporous semiconductors and semiconductor
ΔEh
Th NPs of anisotropic shape.
EVB EVB
Charge separation in coupled semiconductor
nanostructures: A combination of two nanocrystalline
а b
semiconductors differing in the band structure can favor
conditions of the photogenerated electron separation and
Scheme 2. Energy diagram of photocatalytic systems based hole on different parts of the nanocomposite. Scheme 3
on non-charged semiconductor NPs (case а) and the NPs in illustrates the charge separation in a coupled CdS/TiO 2
the state of photoinduced polarization (case b). nanostructure.
Е, В eCB–
2.2 Semiconductor NC size and Photocatalytic etr– e–
activity: The semiconductor photocatalysts have large band •+ A/A•–
D/D
gap (Eg > 2.2 eV). Size-dependent band gap expansion is
h+
helpful in development of photocatalytic properties in
CdS
nanocrystals of semiconductors.The rate constant of the
photoinduced electron transfer from CdS NPs is related with
TiO2
MV2+ and the size of semiconductor NPs as:
lg(k/kbulk) = - Е = - (ECB(R) – E0(MV2+/MV +)) (23)
Scheme 3. Charge separation in a coupled CdS/TiO2
where kbulk is the charge transfer rate constant for nanostructure.
bulk CdS, is a constant. A combined effect of the size-
dependent band edge potential growth and the photoinduced Photoexcitation of the CdS/TiO2 nanostructures: It
polarization of semiconductor NPs determines the pho- goes in one-way electron transfer from the conduction band
tocatalytic behavior of NPs as semiconductor of CdS NPs to TiO2 NPs. Many coupled semiconductor
Nanoheterostructures with Advanced Photocatalytic nanostructures with advanced photocatalytic and
Properties photoelectrochemical properties are in use CdS/TiO2,
The quantum yields of semiconductor-mediated
CdSe/TiO2, ZnS/TiO2, PbS/TiO2, Bi2S3/TiO2, CdS/MxSy
photocatalytic reactions are 0.1-0.2 due to loss of
photogenerated charge carriers in various recombination (MxSy = Bi2S3, Sb2S3, CuxS, Ag2S), CdS/ZnO, CdS/AgJ,
processes. So, maximal quantum yield of photocatalytic CdS/ZnS, ZnO/TiO2, Cu2O/TiO2, ZnO/SnO2, SnO2/TiO2,
processes may not be expected to be higher than 0.1. WO3/TiO2, WO3/ZnO, MnOx/TiO2, In2O3/TiO2, CeO2/TiO2,
Fe2O3/TiO2, ZrO2/TiO2, Cu2O/ZnO, InP/TiO2, AgBr/TiO2,
MoS2/TiO2, WS2/TiO2, CdTe/TiO2, etc.
Generally, the charge separation rate in coupled sulfur with the participation of ZnO NPs and nanocrystalline
semiconductor nanostructures is very high. For example, the TiO2 films produces coupled ZnO/MS and TiO2/MS
rate constants of photoinduced electron transfer from CdS nanostructures (where MS = CdS, PbS, CuS).
(CdSe) NPs to ZnO or TiO2 NPs in the coupled CdS/ZnO, Colloidal ZnO nanorods 100-350 nm in length and 20-
CdS/TiO2 and CdSe/TiO2 nanostructures are as high as 1010- 150 nm in the inner diameter can be produced by the
1012 s-1. The electron transfer act occurs in 10-100 ps after
ultrasound treatment of bulk ZnO powder. The relative
the photoexcitation and can be as efficient as 100%,
competing with the surface trapping and recombination of positions of the potentials of conduction and valence band
charge carriers. edges of CdS, ZnO and TiO2 is favorable for the fast and
The increased efficiency of primary charge separation irreversible spatial charge separation in ZnO/CdS and
results in growth of the quantum yields of photocatalytic TiO2/CdS nanostructures forming in photocatalytic reaction
reactions mediated by the coupled semiconductor (Scheme 4).
nanostructures. For example, the said charge separation in Step I. Step II. Step III.
Photocatalytic Formation of Growth of CdS
the CdS/TiO2 nanostructures is accompanied by acceleration deposition of ZnO/CdS nanotubes
of the oxidative photocorrosion of CdS NPs and Cd II primary CdS NPs nanocomposites
3 CONDUCTION IN NANOCOMPOSITES
1 INTRODUCTION Polymers can be electrically conductive when doped with
oxidizing or reducing agents.
Organic polymer with electrical, electronic, magnetic and Pn [Pn+ A–] [Pn+A–] [Pn2+2A–], [ Pn +A–]+Pm [(Pn Pm) +A–]
optical properties of a metal/metal oxide “intrinsically (reduction oxidation) (reduction oxidation)
conducting polymer” (ICP) or “synthetic metal” (i.e., nano- Polyconjugated structures if treated with an oxidizing or a
rods, -tubes, -wires, and -fibers). Chemical and reducing agent (doping) makes polymer salts with electrical
electrochemical synthesis of conjugated polymer nanotubes conductivities. P-type doping: removal of electrons from the
and nano-wires: polyaniline(PANI) ,polypyrole (PPy), polyn- valence band by the oxidizing agent, leaving the polymer
methylpyrrole (PNMPy), polythiophene (PTh) and with a positive charge. N-type doping: it encompasses
polyethylenedioxythiophene (PEDOT) in the form of nano- donation of an electron to the empty conduction band by a
arrays, nano-tubes and nano-fibers) is a “conjugate polymer reducing agent. Polyconjugated structures if treated with an
nanomaterial”. As example, polyaniline (PANI) is explored oxidizing or a reducing agent (doping) makes polymer salts
in this paper. with electrical conductivities. P-type doping: removal of
electrons from the valence band by the oxidizing agent,
*
Part of undergraduate project by Adhar Sharma, BEE(II) leaving the polymer with a positive charge. N-type doping: it
encompasses donation of an electron to the empty conduction
band by a reducing agent.
Table.1. Common characterization techniques for clay
based polymer nanocomposites.
Fig.1. The bipolarons are thus spin less. The presence of bipolarons on
polymer chains result in the possibility of two optical transitions below
the band gap transition: for p-type doping, from the VB to the lower
bipolaron level and from the VB to the upper bipolaron level.
4 GENRAL APPLICATIONS
4.1 Luminescence
Electronic excitation of the polymer from π to π* states, and
π* to π states show: fluorescence, phosphorescence, or
radiation less decay (rotational or vibrational motion within
the polymer and its surroundings). Absorption - emission
maxima (Stokes shift) occurs when emission from the lowest
vibrational excited state relaxes to various vibrational levels
of the electronic ground state. Emission efficiency of the
polymer is quantum yield of luminescence Φpl or the ratio of
the number of photons emitted to the number of photons
absorbed, as shown: