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I. INTRODUCTION
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840 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 4, APRIL 2007
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DIETRICH et al.: A NONVOLATILE 2-Mbit CBRAM MEMORY CORE FEATURING ADVANCED READ AND PROGRAM CONTROL 841
Fig. 7. The 128-Kbit segment layout including local WL driver, CSL, and read/
write circuitry.
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842 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 4, APRIL 2007
V
Fig. 10. V
Fig. 11. settling time (simulated for worst case condition of low resis-
comparison: Feedback regulated versus conventional source-
follower type approach.
tive R =R ).
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DIETRICH et al.: A NONVOLATILE 2-Mbit CBRAM MEMORY CORE FEATURING ADVANCED READ AND PROGRAM CONTROL 843
Fig. 13. I comparison: Dummy bleeder device versus conventional ap- Fig. 15. Full chip simulation: Erase-Read-Program-Read sequence, V =
proach without bleeder device. 3 V (boosted WL scheme), reference BLs connected to SAP, V = VDD =
1:5 V.
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844 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 4, APRIL 2007
Stefan Dietrich was born in Munich, Germany, on Michael Kund was born in Cologne in 1965. He re-
May 12, 1965. He received the Diploma in physics ceived the Dipl.-Phys. degree in 1992 and the Dr. rer.
from the Technical University of Munich and the nat. degree in 1995, both from the Technical Univer-
Ph.D. degree from the University of Augsburg, sity of Munich, Germany.
Germany, in 1993 and 1996, respectively. In 1996, he joined Siemens Semiconductors and
In 1996, he joined the Memory Products division in 2001 Infineon Technologies (now Qimonda)
of Infineon Technologies (formerly Siemens Semi- working on production engineering, design analysis
conductors) in Munich, Germany, which became Qi- and design for testability for high-performance
monda AG. Since then, he has been engaged in de- DRAMs. Since 2002, he has been working on
velopment of high-speed graphics dynamic memo- emerging memory technologies. His main research
ries and emerging memory platforms. interests are memory devices, design and characteri-
Dr. Dietrich is a member of the German Physical Society. zation. He holds eight registered patents and has 25 patents pending.
Dr. Kund is a member of the German Physical Society.
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DIETRICH et al.: A NONVOLATILE 2-Mbit CBRAM MEMORY CORE FEATURING ADVANCED READ AND PROGRAM CONTROL 845
Serge Bournat was born in Thiers, France, in 1961. Gerhard Mueller received the Diploma in physics
He received the Engineering School diploma in 1984 and the Ph.D. degree from the Technical University
and the ABD in 1985, both from Ecole Supérieure de of Munich, Germany, in 1989 and 1992, respectively.
Physique et Chimie de Paris. After working for AT&T Bell Laboratories,
In 1986, he joined IBM Microelectronics working Murray Hill, NJ, and Philips Research, Eindhoven,
in semiconductor production engineering. In 2000, The Netherlands, in 1996 he joined the Memory
he joined Altis Semiconductor, an IBM/Infineon joint Products division of Infineon Technologies (for-
venture. Since 2003, he has been in charge of the de- merly Siemens Semiconductors, now Qimonda)
velopment program of future memory technologies. in Munich, Germany. He is currently a Senior Di-
rector responsible for the development of emerging
memory technologies. His past roles included being
the team leader of a product design department. Within this role in the DRAM
Development Alliance (Hopewell Junction, NY) he was working on 512 Mb
and 1 Gb DRAM product demonstrators. After that, he was a Project Manager
responsible for Infineon’s MRAM activities in Germany and then within the
MRAM Development Alliance.
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