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BF199

BF199

NPN RF Transistor

1
TO-92

1. Collector 2. Emitter 3. Base


Absolute Maximum Ratings* TC=25C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 25 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector Current - Continuous 50 mA
TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics TC=25C unless otherwise noted


Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 25 V
V(BR)CBO Collector-Base BreakdownVoltage IC = 100A, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 4.0 V
ICES Collector Cut-off Current VCE = 30V, IE = 0 50 nA
On Characteristics
hFE DC Current Gain IC = 7.0mA, VCE = 10V 38
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 5.0mA 0.2 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 5.0mA 0.92 V
VBE(on) Base-Emitter On Voltage IC = 7.0mA, VCE = 10V 0.925 V
Small Signal Characteristics
fT Current gain Bandwidth Product IC = 7.0mA, VCE = 10V, 1100 MHz
f = 100MHz
Cre Common-Emitter Ruerse VCB = 10V, IE = 0, f = 1.0MHz 0.4 pF
Transfer Capacitance
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%

Thermal Characteristics TA=25C unless otherwise noted


Symbol Parameter Max. Units
PD Total Device Dissipation 350 mW
Derate above 25C 2.8 mW/C
RJC Thermal Resistance, Junction to Case 125 C/W
RJA Thermal Resistance, Junction to Ambient 357 C/W

2002 Fairchild Semiconductor Corporation Rev. A, September 2002


BF199
Package Dimensions

TO-92
+0.25
4.58 0.15

4.58 0.20

0.46 0.10
14.47 0.40

+0.10
1.27TYP 1.27TYP 0.38 0.05
[1.27 0.20] [1.27 0.20]

3.60 0.20
3.86MAX

(0.25)
+0.10
0.38 0.05
1.02 0.10

(R2.29)

Dimensions in Millimeters

2002 Fairchild Semiconductor Corporation Rev. A, September 2002


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CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS


Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2002 Fairchild Semiconductor Corporation Rev. I1


This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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