2SC1815W

NPN Transistor
Elektronische Bauelemente Epitaxial Planar Transistor
RoHS Compliant Product

Description
The 2SC1815W is designed for use in
driver stage of AF amplifier and general
purpose amplificaion.

Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 0.80 1.10 L1 0.42 REF.
A1 0 0.10 L 0.15 0.35
A2 0.80 1.00 b 0.25 0.40
D 1.80 2.20 c 0.10 0.25
E 1.15 1.35 e 0.65 REF.
HE 1.80 2.40 Q1 0.15 BSC.

ABSOLUTE MAXIMUM RATINGS Ta=25oC

Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 150 mA
PD Total Power Dissipation 225 mW
TJ,Tstg Junction and Storage Temperature -55~+150
O
C

o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Min Typ. Max Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO 60 - - V I C= 100 A
Collector-Emitter Breakdown Voltage BVCEO 50 - - V I C= 1mA
Emitter-Base Breakdown Voltage BVEBO 5 - - V I E= 10A
Collector-Base Cutoff Current I CBO - - 100 nA VCB= 60V
Emitter-Base Cutoff Current I EBO - - 100 nA VEB=5V
Collector Saturation Voltage *VCE(sat) - - 250 mV I C=100mA,IB=10mA
Base Saturation Voltage *VBE(sat) - - 1 V I C=100mA,IB=10mA
*hFE1 120 - 700 VCE= 6 V, I C=2mA
DC Current Gain
*hFE2 25 - - VCE= 6 V, I C=150mA
Gain-Bandwidth Product fT 80 - - MH z VCE= 10 V, IC= 1mA,f=100MHz
Output Capacitance Cob - - 3.5 pF VCB=10V , f=1MHz
*Pulse width380s, Duty Cycle2%
Classification of hFE
Rank C4Y C4G C4B
Range 120~240 200~400 350~700

http://www.SeCoSGmbH.com Any changing of specification will not be informed individual

01-Jun-2002 Rev. A Page 1 of 2

 2SC1815W
NPN Transistor
Elektronische Bauelemente Epitaxial Planar Transistor

Characteristics Curve

http://www.SeCoSGmbH.com Any changing of specification will not be informed individual

01-Jun-2002 Rev. A Page 2 of 2