9/12/2013

Power Electronics

Lecture – 1
Introduction

Instructor

Usman Younis
Ph.D.
h Electronics
l and
d Electrical
l l Engineering,
University of Glasgow
Studied the design and development
semiconductor devices and optics
(generally called Optoelectronics)

usman.younis@seecs.edu.pk
RIMMS Building
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Course

„ Pre-requisite:
‰ Basic knowledge of solid state devices and
electric circuits
‰ Knowledge of device physics is desirable
‰ Courses on Circuit Analysis and Electronics

„ This course:
‰ Credits: 3+1

Please keep yourself updated using LMS

Usman Younis

Course Objectives

1. Learn how to analyze the operation of power

semiconductor devices
2. Understanding of basic power electronic
systems, e.g., rectifiers, converters, and
inverters
3. Study and explain the voltage and current
waveforms using Fourier analysis
4. Understand the device physics
5. And finally, should be able to design a power
electronics system
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Books
„ Text Book:
‰ Power Electronics: Circuits, Devices, and Applications, 2nd or
3rd Ed. by M. H. Rashid, Prentice Hall

Please buy your

self a book

„ Reference Books:
1. Power Electronics: Converters, Applications and Design, 3rd
Ed. by Ned Mohan, Wiley
2. Elements of Power Electronics by Philips T. Krein, Oxford
University Press

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Grading
Theory (75 %) Practical (25 %)
50 % Final Exam 75 % Lab work
30 % OHTs 25 % Lab Exams
10 % Assignments
10% Quizzes

„ Quizzes will be announced

‰ If missed, ZERO grade will be assigned for that quiz
‰ There is no “best of” policy, therefore don’t miss a quiz

„ Cheating – Don’t do this

‰ You will get a zero, and repeated cases must be forwarded
to HoD/Dean

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Attendance & Plagiarism Policy

„ 75% attendance is mandatory to appear in the final

exam,
e a , as pe
per u
university's
ve s ty s pol
policy
cy
„ Please don’t copy from others, and don’t let others
copy your work
‰ Read the Official Policy at:
http://seecs.nust.edu.pk/about_niit/downloads/SEECS_P
lagiarism_Policy_Dec2010_v1.0.pdf

Don’t put the Instructor and yourself in an

awkward situation, follow the Norms

Usman Younis

What do we need in every day life?

Usman Younis Exxon Mobil, 2012

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World’s Population
We will be
around 9
billion people
b 2040
by
We stand here
at around 7
billion people

Usman Younis UN Projections, 2010

Why to Study
„ World population is on the rise, by 2040 it will
grow about 25 % of what is now
„ Hi h the
Higher th population
l ti growth th hi
higher
h ththe d
demandd
for electricity generation
„ By 2040, world wide electricity demand will be
80 % higher than what it is now
„ Electricity generation in 2040 will require about
40 % of the global energy consumption
„ Developing economies, e.g., Pakistan, will have
seriously think for electricity generation and
efficient power electrical systems

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Think Green?
„ We consume much
more energy in daily
life as compared to
what we need to live

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Power Generation, Transmission, and

Distribution

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Electrical Transmission

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Motivation
„ Conservation of energy is the most important factor of
any electrical system
„ Generation transmission,
Generation, transmission and distribution losses must
be planed by the electricity generation and distribution
companies
„ However, the power management for domestic
consumers requires efficient power conversion devices
„ It means, electrical supply companies shall charge you
what
h ever the h kWh your electricity
l i i meter consumes
„ It is up to you to select the efficient devices which
have minimal power losses, i.e., improved power
factors (both due to phase difference and the harmonic
distortions)
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Power Electronics

„ Applications of solid-sate electronics for the

control and conversion of electric power
‰ Control deals with the steady-state and dynamic
characteristics
‰ Power deals with static and rotating power
generation equipment
„ Based p
primarilyy on the switching
g of p
power
semiconductor devices
‰ Includes wide range of switching speeds, i.e., from
diodes to MOSFETS, and so on

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Power, Electronics, and Control

Power electronics involves the

study of electronic circuits
intended to control the flow of
electrical energy.

These circuits handle power

flow at levels much higher than
the individual device ratings.

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Applications

„ A wide range of applications, e.g., heat

controls light controls,
controls, controls motor controls,
controls power
supplies, vehicle propulsion systems, and high
voltage direct current (HVDC) systems.

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How it started

Silicon Thyristor MOS

Transistor (PNPN) Technology
Here we
are
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Power semiconductor devices

„ First thyristor was developed in late 1957,
there have been tremendous advances in the
power semiconductor
i d d
devices
i
„ Since then many devices have been developed,
and categorized as following:
1. Power diodes
2. Thyristors
3. Power Bipolar Junction Transistors (BJTs)
4. Power MOSFETs
5. Insulated Gate Bipolar Transistor (IGBT) and Static
Induction Transistor (SIT)

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Power semiconductor devices

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Diodes, Thyristors, and Transistors

„ Diode: two terminal device

1. General Purpose
1
2. High Speed
3. Schottky Diode
„ Thyristor: three terminal device
1. Gate-turn-off thyristor (GTO)
2. Reverse conducting thyristor (RCT)
3
3. Static induction thyristor (SITH)
4. Gate-assisted turn-off thyristor (GATT)
5. MOS turn-off (MTO) thyristor
6. Emitter turn-off (ETO) thyristor
7. MOS control thyristors (MCT)

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Diodes, Thyristors, and Transistors

„ Transistor: three terminal device

‰ Bipolar Junction Transistors (BJTs) – Commonly used in power
converter (<10 KHz) and power ratings up to 1200V & 400A.
‰ Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) –
Commonly used in high speed power converter at relatively low
power ratings in the range of 1000V & 100A at frequency range
of several tens of KHz.
‰ Insulated Gate Bipolar Transistor (IGBT) – Commonly used for
high power rating 1700 V & 2400 A and frequencies up to 20KHz.
20KHz
‰ Static Induction Transistor (SIT) – Commonly used for power
rating up to 1200 V & 300 A and switching speed as high as 100
KHz

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Power Ranges of Devices

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Applications of Power devices

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Control Characteristics
„ Power semiconductor devices are used as switches by
applying control signals
‰ Gate terminal of Thyristors

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Control Characteristics (Contd..)

„ Power semiconductor devices are used as switches by
applying control signals
‰ Base of BJT, and so on

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Control Characteristics (Contd..)

The power semiconductor switching devices can be
classified on the basis of:
1. Uncontrolled turn on and off (e.g., diode)
2 Controlled
2. C t ll d turn
t on andd uncontrolled
t ll d tturn off
ff ((e.g., SCR)
3. Controlled turn on and off characteristics (e.g., BJT, MOSFET,
GTO, SITH, IGBT, SIT, MCT)
4. Continuous gate signal requirement (e.g., BJT, MOSFET, IGBT,
SIT)
5. Pulse gate requirement (e.g. SCR, GTO, MCT)
6. Bipolar voltage-withstanding capability (SCR, GTO)
7. Unipolar voltage-withstanding capability (BJT, MOSFET, GTO,
IGBT, MCT)
8. Bidirectional current capability (TRIAC, RCT)
9. Unidirectional current capability (SCR, GTO, BJT, MOSFET, MCT,
IGBT, SITH, SIT, diode)

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Control Characteristics (Contd..)

Summary

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Power devices as switches

„ Power semiconductor devices are used for switching,
e.g., BJT, MOSFET, GTO, IGBTs, etc.
„ Each device should meet the performance of an ideal
switch, i.e.,
‰ On state: high forward current, low voltage drop, low series (on
state) resistance
‰ Off state: very high VBR, zero leakage (off state) current, very
high off state resistance
‰ Instantaneous turn-on and turn-off for high frequency
applications
‰ Minimum gate drive power requirements
‰ Turn-on and turn-off controllability
‰ High dv/dt, and high di/dt
‰ Minimum thermal resistance
‰ Low price
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Power devices as switches (contd..)

1 ⎛ tr ts tf
⎞
⎜ pdt + pdt + pdt ⎟
⎜ ∫0 ∫0 ∫0
PSW =
TS ⎝ ⎠
Deviation from
the ideal:
„ Turn-on and turn-
off is not
i t t
instantaneous
„ Results in power
losses and may
damage the
device
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Power devices as switches (contd..)

Device Parameters
„ Voltage and Current Ratings
‰ Forward and reverse peak voltages, on
on-state
state voltage drop
‰ Average, rms, peak, and off-state leakage currents
„ Switching Speed or Frequency
1 1
fS = =
TS td + tr + ton + ts + t f + toff

„ di/dt rating: if high then current flow is concentrated to a

certain
t i area which
hi h may d
damage th
the d
device
i
„ dv/dt rating: if high then current flowing through junction may
damage the device
„ Gate Drive requirements
‰ Gate drive voltage and current
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Power Electronics Circuits

„ Power electronics circuits can be classified

into six types:
1. Diode Rectifiers
2. Ac-dc converters (controlled rectifiers)
3. Ac-ac converters (ac voltage controllers)
4. Dc-dc converters (dc choppers)
5. Dc-ac converters (inverters)
6. Static switches

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Diode Rectifier (Uncontrolled Diode)

+
AC DC
–

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AC-DC Converter (Controlled Thyristor)

+
AC DC
–

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AC-AC Converter (controlled TRIAC)

AC AC

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DC-DC Converter (controlled

Transistor)
+ +
DC DC
– –

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DC-AC Inverter (controlled Transistors)

+
DC AC
–

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Cascaded Conversion
„ A number of conversion stages can be cascaded to
achieve an integrated system, e.g.,
„ Uninterruptible power supply (UPS)

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Additional Concepts

„ Root Mean Square

‰ AC waveforms are sinusoidal
‰ No constant value to do Measurements
‰ Instead of using AC quantities we use ROOT mean
square values
‰ If rms-value of an AC current is equal to value of DC
current, then both will do same aount of work, e.g.,
‰ For example, 10 A (rms) AC will do exactly the same
amount of work as 10 A DC.

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Root Mean Square

„ RMS value of a waveform i(t) can be calculated as:

T
1 2
T ∫0
I rms = i (t )dt

„ If the waveform has harmonics, then RMS can be

calculated as:
I rms = I dc2 + I rms
2
(1) + I rms ( 2 ) + ... + I rms ( n )
2 2

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Root Mean Square (Examples)

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Peripheral Effects
„ Power electronic circuits frequently use switching components,
which may introduce harmonic distortions, e.g., in case of diode
rectifiers
„ This affects the output voltage, supply system, and communication
and signaling circuits
„ Filters are employed to circumvent this
„ The quality of a power converter is assessed by the quality of its
current and voltage waveforms, which is evaluated by transforming
the waveforms in frequency domain (Fourier Series/Transform)

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