Rev 2: Nov 2004

AO3401, AO3401L ( Green Product )

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO3401 uses advanced trench technology to VDS (V) = -30V

provide excellent RDS(ON), low gate charge and ID = -4.2 A
operation with gate voltages as low as 2.5V. This RDS(ON) < 50mΩ (VGS = -10V)
device is suitable for use as a load switch or in PWM RDS(ON) < 65mΩ (VGS = -4.5V)
applications. AO3401L ( Green Product ) is offered in
RDS(ON) < 120mΩ (VGS = -2.5V)
a lead-free package.

D
TO-236
(SOT-23)
Top View

G
D G
S S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C -4.2
Current A TA=70°C ID -3.5 A
Pulsed Drain Current B IDM -30
TA=25°C 1.4
PD W
Power Dissipation A TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 65 90 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 85 125 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 43 60 °C/W

Alpha & Omega Semiconductor, Ltd.

AO3401, AO3401L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.7 -1 -1.3 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 A
VGS=-10V, ID=-4.2A 42 50
mΩ
TJ=125°C 75
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A 53 65 mΩ
VGS=-2.5V, ID=-1A 80 120 mΩ
gFS Forward Transconductance VDS=-5V, ID=-5A 7 11 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.75 -1 V
IS Maximum Body-Diode Continuous Current -2.2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 954 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 115 pF
Crss Reverse Transfer Capacitance 77 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 6 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 9.4 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-15V, ID=-4A 2 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 6.3 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=3.6Ω, 3.2 ns
tD(off) Turn-Off DelayTime RGEN=6Ω 38.2 ns
tf Turn-Off Fall Time 12 ns
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs 20.2 ns
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs 11.2 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO3401, AO3401L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25.00 10
-10V VDS=-5V
20.00 -4.5V 8
-3V
15.00 6
-ID (A)

-ID(A)
-2.5V 125°C
10.00 4

5.00 VGS=-2V 2 25°C

0.00 0
0.00 1.00 2.00 3.00 4.00 5.00 0 0.5 1 1.5 2 2.5 3
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

120 Normalized On-Resistance 1.8

100 1.6 ID=-3.5A, VGS=-4.5V

ID=-3.5A, VGS=-10V
RDS(ON) (mΩ)

80 VGS=-2.5V 1.4

VGS=-2.5V
60 VGS=-4.5V 1.2
ID=-1A

40 1
VGS=-10V

20 0.8
0.00 2.00 4.00 6.00 8.00 10.00 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

190 1.0E+01
170
1.0E+00
150
ID=-2A
1.0E-01
130 125°C
RDS(ON) (mΩ)

1.0E-02
-IS (A)

110

90 1.0E-03
125°C
70 25°C
1.0E-04
50 25°C
1.0E-05
30
10 1.0E-06
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VGS (Volts) -VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO3401, AO3401L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1400
VDS=-15V
ID=-4A 1200
4
1000

Capacitance (pF)
Ciss
-VGS (Volts)

3
800

2 600

400
1 Coss Crss
200

0 0
0 2 4 6 8 10 12 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 TJ(Max)=150°C 40
TA=25°C TJ(Max)=150°C
10µs TA=25°C
RDS(ON) 30
10.0 limited 100µs
-ID (Amps)

Power (W)

1ms
20
0.1s 10ms
1.0
1s 10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=90°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.