ESE319 Introduction to Microelectronics

High Frequency BJT Model

2008 Kenneth R. Laker, update 12Oct10 KRL 1

 ESE319 Introduction to Microelectronics

Gain of 10 Amplifier – Non-ideal Transistor

Gain starts dropping at about 1MHz.

Why!
Because of internal transistor
capacitances that we have ignored
in our models.

2008 Kenneth R. Laker, update 12Oct10 KRL 2

 ESE319 Introduction to Microelectronics

Sketch of Typical Voltage Gain Response

for a CE Amplifier
∣Av∣dB
Low High
Frequency Midband
Frequency
Band ALL capacitances are neglected Band
Due to exter-
nal blocking 3 dB Due to BJT parasitic
and bypass capacitors Cπ and Cµ
capacitors

20 log 10∣Av∣ dB

f  Hz
f L f H (log scale)
BW = f H − f L≈ f H GBP=∣ Av∣ BW
2008 Kenneth R. Laker, update 12Oct10 KRL 3
 ESE319 Introduction to Microelectronics

High Frequency Small-signal Model

C SPICE
rx
CJC = Cµ0
CJE = Cje0
C TF = τF
RB = rx

C0
C = m
Two capacitors and a resistor added. V CB
1 
A base to emitter capacitor, Cπ V 0c
C je 0
A base to collector capacitor, Cµ C =C de m
≈C de 2C je0
V BE
A resistor, rx, representing the base 1− 
V 0e C de = F g m
terminal resistance (rx << rπ) τF = forward-base transit time
2008 Kenneth R. Laker, update 12Oct10 KRL 4
 ESE319 Introduction to Microelectronics

High Frequency Small-signal Model

The internal capacitors on the transistor have a strong effect on
circuit high frequency performance! They attenuate base signals,
decreasing vbe since their reactance approaches zero (short circuit)
as frequency increases.

As we will see later Cµ is the principal cause of this gain loss at

high frequencies. At the base Cµ looks like a capacitor of value
k Cµ connected between base and emitter, where k > 1 and may
be >> 1.

This phenomenon is called the Miller Effect.

2008 Kenneth R. Laker, update 12Oct10 KRL 5

 ESE319 Introduction to Microelectronics

Frequency-dependent “beta” hfe

short-circuit
current

The relationship ic = βib does not apply at high frequencies f > fH!
Using the relationship – ic = f(Vπ ) – find the new relationship
between ib and ic. For ib (using phasor notation (Ix & Vx) for
frequency domain analysis):
I
@ node B': b =
1
r  
s C  sC  V  where r x ≈0 (ignore rx)
NOTE: s = σ + jω, in sinusoidal steady-state s = jω.
2008 Kenneth R. Laker, update 12Oct10 KRL 6
 ESE319 Introduction to Microelectronics

Frequency-dependent hfe or “beta”

I b=
1
rs C  sC  V 
 @ node C: I c = g m −s C  V  (ignore ro)

Leads to a new relationship between the Ib and Ic:

Ic g m −s C 
h fe = =
Ib 1
s C s C 
r
2008 Kenneth R. Laker, update 12Oct10 KRL 7
 ESE319 Introduction to Microelectronics

Frequency Response of hfe

g m −s C 
h fe = IC VT
1 g m= r  =
s C s C  VT IC
r
multiply N&D by rπ and set s = jω C 1
For small ω
=
s low : low ≪1
 g m− j  C   r  gm 10
h fe =
1 j C C  r  1
and: low C  C   r  ≪1
factor N to isolate gm 10
C   C
1− j   g m r  Note: low C C   r =low C C   ≫low
gm gm
gm
h fe =
1 j C C  r  We have: h fe = g m r =
2008 Kenneth R. Laker, update 12Oct10 KRL 8
 ESE319 Introduction to Microelectronics

Frequency Response of hfe cont.

h fe =
C
1− j   g m r 
gm
=
1− j

z 
g m r =

1− j
f

fz

 h fe dB

20log10 


1 j C  C   r 
1 j

  
1 j
f

f  f f
f
 C z

C  C  r  =C  C   ≫ => f z≫ f 
gm gm
Hence, the lower break frequency or – 3dB frequency is fβ
1 gm 1 gm
f = = f z= =
2  C  C  r  2 C C    the upper: 2 C  / g m 2 C 
where f z 10 f 
2008 Kenneth R. Laker, update 12Oct10 KRL 9
 ESE319 Introduction to Microelectronics

Frequency Response of hfe cont.

Using Bode plot concepts, for the range where: f  f 
h fe = g m r =
For the range where: f   f  f z s.t. ∣1− j f / f z∣≈1

We consider the frequency-dependent numerator term to

be 1 and focus on the response of the denominator:

g m r 
h fe = =

 1 j
f
f  1 j
f
f 
2008 Kenneth R. Laker, update 12Oct10 KRL 10
 ESE319 Introduction to Microelectronics

Frequency Response of hfe cont.

g m r 
Neglecting numerator term: h fe = =

 1 j
f
f  1 j
f
f 
 f
And for f / f  >>1 (but < f / f z ): ∣h fe∣≈ =
f
f  
f

f
Unity gain bandwidth: ∣h fe∣=1⇒  f ¿ ¿| f = f =1⇒ f T = f 
T

T BJT unity-gain fre-

f T= = f  quency or GBP
2
2008 Kenneth R. Laker, update 12Oct10 KRL 11
 ESE319 Introduction to Microelectronics

Frequency Response of hfe cont.

−3
=100 r  =2500  C  =12 pF C =2 pF g m =40⋅10 S
12 −3
1 10 ⋅10
 = = =28.57⋅106 rps
 C C   r  122⋅2.5
 28.57 6 f T = f =455 MHz
f = = 10 Hz=4.55 MHz
2 6.28
g m 40⋅10−3⋅1012
z= = Hz=20⋅10 9 rps
C 2
z
f z= =3.18⋅109 Hz=3180 MHz
2
2008 Kenneth R. Laker, update 12Oct10 KRL 12
 ESE319 Introduction to Microelectronics

Scilab fT Plot

//fT Bode Plot

Beta=100;
KdB= 20*log10(Beta);
fz=3180;
fp=4.55;
f= 1:1:10000;
term1=KdB*sign(f); //Constant array of len(f)
term2=max(0,20*log10(f/fz)); //Zero for f < fz;
term3=min(0,-20*log10(f/fp)); //Zero for f < fp;
BodePlot=term1+term2+term3;
plot(f,BodePlot);

2008 Kenneth R. Laker, update 12Oct10 KRL 13

 ESE319 Introduction to Microelectronics

hfe Bode Plot

(dB)

fT

2008 Kenneth R. Laker, update 12Oct10 KRL 14

 ESE319 Introduction to Microelectronics

Multisim Simulation
v-pi Ic

Ib

v-pi
mS

Insert 1 ohm resistors – we want to measure a current ratio.

Ic g m−s C 
h fe = =
Ib 1
s C C  
r
2008 Kenneth R. Laker, update 12Oct10 KRL 15
 ESE319 Introduction to Microelectronics

Simulation Results

Theory:
Low frequency |hfe| f T = f =455 MHz

Unity Gain frequency about 440 MHz.

2008 Kenneth R. Laker, update 12Oct10 KRL 16