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where:
To draw the transfer
curve, draw a horizontal
line from the origin to VT,
since at VGS < VT, ID = 0 A.
Next, a level of VGS
greater than VT can b
substituted to the
transfer equation to
acquire a corresponding
value for ID .
p-Channel Enhancement-Type
MOSFET
The construction of a p -channel enhancement-type MOSFET is exactly the
reverse of n-channel enhancement-type MOSFET. That is, there is now an n -
type substrate and p -doped regions under the drain and source connections.
The terminals remain as identified, but all the voltage polarities and the current
directions are reversed. The transfer characteristics will be the mirror image
(about the ID axis) of the transfer curve
n-channel enhancement-type MOSFET,
with ID increasing with increasingly
negative values of VGS beyond VT .
Enhancement-Type MOSFET Biasing
First and foremost, recall that for the n -channel
enhancement-type MOSFET, the drain current is zero
for levels of gate-to-source voltage less than the
threshold level VGS(Th). For levels of VGS greater than
VGS(Th), the drain current is defined by