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i a powER ELECTRONICS Which of the following ar Pipe Beet (A) ony P. (©) P and R ‘and the ‘hare? (A) (te © (de ) 3(38)* Power electronic device with poor turf yn (A) A symmetrical thyristor (18) A enuveiona bystor (©) Powe poe jetion tea (D) Gate turnoff tyristor A gate tun olf (GTO) thyristor has capacity (0, A) Amplify the gate-urront (©) Tums when positive cerrat puke is given atthe gat (€) Tumoff whe a gate-pue i give at te gate ene thong revere bad (©) Tormeftwion a negative current pulse given at the ‘Which i tn most stable power device fr high freq il) even appictem ? (8) Powee MOSFET (8) Bipolar justin transistor (©) Scotty diode (©) Microwave tamsisor Moich ist Clypeo! Device) with ist 1 (Charaeteritic/ Applicat) st set the comestansxer using the code given bic th Ins ise List Mosrer Turn off by negative gate High speed switching 1 2 Bisiretional svitcing % 4. Triggering reuse 3 a R s A modem pore! seldicee device nat" “ambiot ‘characteristics of BIT and MOSFET ig > ee (aero (6) Fer (oyicnr (>) mer Consier the following atemen arpa of CBT 1. It combines the attibite of Mosfet sea urn 2 TU has low forwntdvotage drop ‘3 Tts switching sped in very mich liver than tht of MOSFET. 44. Tehas high input impedance ‘Which of the statements given abo are come ? (A) 1.2, Sands (B),2an¢ (1,2 a3 (D) sant ¢ Figure shows a composite svitchconsting of & porte truistor (BVT) in series wth ode. Assuming thatthe tranitor switch and the diode ae deal the F" “aracteratic of the compote sath i eae Which gue ofthe fing i the mest sltble device fa dea (wor (©) Mosret (wero (0) Toynistor awiea tarts tantrcite te itch rng a Mae he ee me ue ow The many tate operating lat are ation yl Back dots

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