You are on page 1of 33

Physics of Graphitic Carbon

Nanotstructures

Philip Kim

Department of Physics
Columbia University
Graphene : Dirac Particles in 2-dimension
Band structure of graphene
E

hole
Energy

kx'
ky'
electron
ky
kx

Zero effective mass particles moving with a constant speed vF


Pseudo Spin in Graphene Lattice
‘A’ sublattice

+ + ! Spinor
pzA(r)
1
- -
‘B’ sublattice
ei! pzB(r)
Relative amplitude of sublattice wavefunctions

pzA(r) + ei! pzB(r) ! =0: bonding ! = !: antibonding

1
k.p perturbation theory
= eik.r
ei! "

!k = tan-1(ky / kx)
DiVincenzo and Mele, PRB (1984); T. Ando, JPSJ (1998);McEuen at al, PRL (1999)
Dirac Fermions in Graphene : “Helicity”
momentum
E pseudo spin E

K’ K
ky
"y "x "y
"x
kx
Single Wall Carbon Nanotube

…. since 1991
Cabon Nanotube Mean Free Path
Room temperature mean free path > 0.2 µm
Modulate Doped GaAs:
Pfeiffer et al.
10

Mean Free Path (µm)


1 m1
m2
m3
m4
sc1
sc2
sc3
sc4
sc5
sc6
sc7
0.1
1 10 100
Temperature (K)

M. Purewall, B. Hong, A. Ravi, B. Chnadra, J. Hone and P. Kim, PRL (2007)


Extremely Long Mean Free Path: Hidden Symmetry ?

1D band structure of nanotubes


Low energy band structure of graphene
E

k1D
EF
Pseudo spin

right moving left moving

•!Small momentum transfer backward


scattering becomes inefficient since it
requires pseudo spin flipping. T. Ando, JPSJ (1998);McEuen at al, PRL (1999)
Carbon Nanotube Superlattice
Purewal, Zuev, Jarillo-Herrero, Kim (2008)

Pd (under HfO2)

SWCNT
(under HfO2)

Pd (over HfO2)

HfO2 on SiO2/Si+
1 µm 20 nm
Pd (under HfO2)
60 nm

Kouwenhoven PRL (1992)


Nanotube Electronics: Challenges
Pros: Con:
High mobility graphene
Controlled growth
High on-off ratio
High critical current density

IBM, Avouris group

Nanotube Ring Oscillators

Artistic dream (DELFT)


Mechanical Extraction of Graphene
Developed by Novoselov et al. Science (2004)

Graphite debris on Si wafer


A Few Layer Graphene on SiO2/Si Substrate
AFM Image
Optical microscope images

1 µm

1.2 nm
0.4 nm

Identifying # of layers
Transport: Novoselov et al, Zhang et al
Raman Spectroscopy: Ferrari et al, Eklund et al,…
0.8 nm
Photoemission: Rotenberg et al, Lanzara et al.
TEM: Meyer et al
STM: Flynn et al, Williams et al, Cromie et al.,…
Transport Single Layer Graphene

Single layer graphene device


Resistivity vs Gate Voltage

5000

~h/4e2
4000

20 µm 3000
Cleaved graphite crystallite

# (")
2000

E
1000

0
-80 -60 -40 -20 0 20 40 60 80
N2D(E) Vg (V)

# -1 = e2vF le N2D
Quantum Hall Effect in Graphene
Novoselov et al, Zhang et al (2005)

1 __
__ h
15
15 6 2 e2
1 __
__ h

Magnetoresistance (k")
2 e2
Hall Resistance (k")

1 __
__ h
10 6 e2
1 __
__ h
10 4

Hall Resistance (k")


10 e2
5 1 __
__ h
14 e2
1 __
__ h
5 6 e2 2
1 __
__ h 0
10 e2 1 __
__ h
-14 e2

0 0 -5 1 __
__ h
0 2 4 6 8 -10 e2
T=50 mK
1 __
h
B (T) Vg=-2 V -10
__
-6 e2

Quantization: -15
1 __
__ h
-2 e2

-1 1 __
_ e 2 -50 0 50
Rxy = 4 (n + 2 ) Vg (V)
h T= 1.5K, B= 9T
Berry’s Phase and Magnetoresistance Oscillations
Landau orbit near the Fermi level
ky Magnetic flux in cyclotron orbit
Graphene:
&B = &o BF /B
kF &o = h/e
kx E Pseudo Spin
'F = &o kF2 /4(#

$ ~ $% exp[2!(&B/&o)]
B=0

2DEG kx'
ky'
S = h/2
Rxx

! = 2!#
Graphene

$ ~ $% exp[2!(&B/&o) – S! /
1/B
Quantum Hall States
h]
1/BF !#
Room Temperature Quantum Hall Effect

1.02

Rxy (h / 2e2)
1.00

300K
45 T
0.98
2.5 3.0
n (1012 cm-2 )
Deviation < 0.3%

+
_

E1 ~ 100 meV @ 5 T

Novoselov, Jiang, Zhang, Morozov, Stormer, Zeitler, Maan, Boebinger, Kim, and Geim Science (2007)
Conductivity, Mobility, & Mean Free Path

Mobility Mean free path

100 e2/h
1000

TC17

Mobility (cm2/V sec)

Lm (nm)
TC17 TC17
Conductivity

TC12 TC12 100


TC12

TC145
TC145
TC145
TC130
TC130
TC130

10
0.01 0.1 1 10
Vg (V) n (1012 cm-2) |n| (1012 cm-2)
Graphene Mobility
GaAs HEMT Graphene Mobility

Modulate Doped GaAs:


Pfeiffer et al.

Mobility (cm2/V sec)


TC17

TC12

TC145

TC130

n (1012 cm-2)
Tan et al. PLR (2007)
STM on Graphene

Ripples of graphene on a SiO2 substrate Atomic resolution

Scattering Mechanism?

•!Ripples
•!Substrate (charge trap)
•!Absorption
Elena Polyakova et al (Columbia Groups), PNAS (2007) •!Structural defects
See also Meyer et al, Nature (2007) and Ishigami et al, Nano Letters (2007)
Toward High Mobility: Suspending Samples
SEM image of suspended graphene

graphene

HF etching
-> critical pointing drying

AFM image of suspended graphene


You should not apply to high gate voltage, otherwise…
Collapsed graphene devices…
Cleaning Graphene Surfaces: Annealing

4 17B S452
T=4K 17B: best unsuspended sample
µ ~ 20,000 cm2/Vsec
3
Resistivity (")

5 µm

2 S452: suspended sample

1
S452: after current annealing

0 Sample quality can be improved


-10 -5 0 5 10 after self-heating annealing:
Vg (V) current density ~ 108 A/cm2
(Developed by Bachtold et al, APL (2007))
Unsuspended (300 nm SiO2): Cg = 115 aF/µm2

Suspended (~150 nm SiO2): Cg ~ 50 aF/µm2


Characteristics of Suspended Samples: Mobility

Drude Mobility SdH Oscillations


n = 2X1011 cm-2
after annealing
Mobility (cm2/V sec)

before annealing
before annealing

onset of SdH
after annealing
unsuspended best

Density ( 1012 cm-2)

µ ~ 200,000 cm2/Vs µ!> 1/BSdH ~ 100,000 cm2/Vs


@ 2X1011 cm-2
Charge Inhomogeneity near the Charge Neutrality Point:
Unsuspended samples
Unsuspended Samples Conductivity near zero density

10

) (e2/h)
*WDirac
0
-1 0 1
n (1012 cm-2)

Charge inhomogeneity near zero density

Mobility
Versus
Inhomogeneirty
(unsuspended)
Martin et al. Nature Phys. (2008)
Toward High Mobility Samples
B29.00011 Bolotin et al: Monday

Normalized Resistivity
Mobility VS. Inhomogeneirty

best unsuspended
# (n) / # (n=0)

$WDirac

$WDirac

Suspended samples

Suspended & annealed

n (1010 cm-2)

Density Inhomogeneity < 1010 cm-2 is possible!


Graphene Electronics

Engineer Dreams

Theorist Dreams

and
more …

Graphene Veselago lense Graphene q-bits


Cheianov et al. Science (07) Trauzettel et al. Nature Phys. (07)
From Graphene “Samples” To Graphene “Devices”

Contacts: Graphene patterning: Graphene etching: Local gates:

PMMA HSQ Oxygen plasma ALD HfO2


EBL EBL EBL
Evaporation Development Evaporation
Graphene Nanoribbons: Confined Dirac Particles
Gold electrode Graphene Dirac Particle Confinement

W
W

1 µm

10 nm < W < 100 nm

Graphene nanoribbon theory partial list

Zigzag ribbons
Egap~ hvF *k ~ hvF/W
10-4
W = 32 nm

Conductance ("-1)
Graphene Ribbon Devices 10-5

10-6
200K
Gold electrode Graphene Dirac Particle Confinement 10-7 100K
10K
1.7K
10-8
0 20 40 60
W Vg (V)
W 10-4
Egap~ hvF / W

Conductance ("-1)
10-5

1 µm
10-6
200K
10 nm < W < 100 nm 10-7
100K
10K
Wide (> 1µm) Graphene 1.7K
W = 53 nm
10-1 10-8
0 20 40 60
Conductivity ("-1)

Vg (V)
Conductance (µS)

10-2
10-4

Conductance ("-1)
10-3 10-5
30mK
Vg = 0 V 4K
T = 300 K 10-4 77K 10-6 200K
290K 100K
10K
10-5 10-7
1.7K
-30 -20 -10 0 10 20 30 W = 75 nm
Ribbon Width (nm) Vg (V) 10-8
0 20 40 60
Vg (V)
Scaling of Energy Gaps in Graphene Nanoribbons

100
Eg (meV)

Eg = E0 /(W-W0)
10 P1
P2
P3
P4
D1
D2
1
0 30 60 90
W (nm) Han, Oezyilmaz, Zhang and Kim PRL (2007)
Top Gated Graphene Nano Constriction
Top gate SEM image of device
drain source
Hf-oxide top gate

drain source
graphene
graphene
1 µm

SiO2 30 nm wide x 100 nm long


Back gate
75

50
10-1
OFF
25

VBG (V)
10-2
G (e2/h)

0
10-3
10-4 -25
G (e2/h)
10-5 -50
The image cannot be displayed. Your computer may not have enough memory to open the image, or the image may have been corrupted. Restart your computer, and then open the file again. If the red x still appears, you may have to delete the image and then insert it again.

10-6 10-7 10-5 10-3 10-1


-75
-8 -4 0 4 8 -8 -4 0 4 8
VLG (V) VLG (V)
Graphene High Bias Regime

Room Temperature, Air

100

50

Isd (µA)
0
L = 2 µm $Vg = -30 V
W=150 nm -25 V
-20 V
-50 -15 V
-10 V
-5 V
0V
-100
High Current Density: > 108 A/cm2
High mobility: > 10,000 cm2/Vsec -4 -2 0 2 4
Saturation Velocity > 2 X 107cm/sec Vsd (V)

Low On-off Ratio: ~ 102


H29.00009 Han et al : Tuesday morning
Graphene Nanostructures out of Mechanical Extraction

Stanford
Manchester DELFT

Challenges:
•!Better Growth -> higher quality samples
•!Controlled Edges

ETH
Columbia Harvard
Acknowledgement
Special Thanks to: Kim Group: 2007
Yuanbo Zhang (now at Berkeley) Roof top of Pupin Laboratory
Meninder Purewal
Melinda Han
Yuri Zuev
Yue Zhao
Chul Ho Lee
Asher Mullokandov
Dmitri Efetov
Byung Hee Hong
Namdong Kim
Barbaros Oezyilmaz (now at NSU)
Kirill Bolotin
Pablo Jarrilo-Herrero (now at MIT)
Zhigang Jiang
Collaboration:
Stormer, Pinczuk, Heinz, Uemura,
Venkataraman, Nuckolls, Brus, Flynne,
Hone, KS Kim, GC Yi
Funding:

You might also like