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2N3905

2N3905

C TO-92
BE

PNP General Purpose Amplifier


This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units


VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units


2N3905
PD Total Device Dissipation 625 mW
Derate above 25°C 5.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W

 2001 Fairchild Semiconductor Corporation 2N3905, Rev A


2N3905
PNP General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, I E = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, IC = 0 5.0 V
ICEX Collector Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA
IBL Base Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA

ON CHARACTERISTICS*
hFE DC Current Gain VCE = 1.0 V, IC = 0.1 mA 30
VCE = 1.0 V, IC = 1.0 mA 40
VCE = 1.0 V, IC = 10 mA 50 150
VCE = 1.0 V, IC = 50 mA 30
VCE = 1.0 V, IC = 100 mA 15
VCE(sat ) Collector-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA 0.25 V
I C = 50 mA, I B = 5.0 mA 0.40 V
VBE( sat) Base-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA 0.65 0.85 V
I C = 50 mA, I B = 5.0 mA 0.95 V

SMALL SIGNAL CHARACTERISTICS


Cob Output Capacitance VCB = 5.0 V, f = 1.0 MHz 4.5 pF
Cib Input Capacitance VEB = 0.5 V, f = 1.0 MHz 10 pF
hfe Small-Signal Current Gain I C = 10 mA, VCE = 20 V, 2.0
f = 100 MHz
hfe Small-Signal Current Gain I C = 1.0 mA, VCE =10 V, 50 200
-4
hre Voltage Feedback Ratio f = 1.0 KHz 0.1 5.0 x10
hie Input Impedance 0.5 8.0 kΩ
hoe Output Impedance 1.0 40 µmhos
NF Noise Figure VCE = 5.0 V, IC = 100 µA, 5.0 dB
RS = 1.0 kΩ,
BW = 10 Hz to 15.7 KHz

SWITCHING CHARACTERISTICS
td Delay Time VCC = 3.0 V, ICS = 10 mA, 35 ns
tr Rise Time I B1 = 1.0 mA ,VOB ( off ) = 3.0 V 35 ns
ts Storage Time VCC = 3.0 V, ICS = 10 mA, 200 ns
tf Fall Time I B1 = IB2 = 1.0 mA 60 ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%


2N3905
PNP General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

V CESAT - COLLECTOR EMITTER VOLTAGE (V)


vs Collector Current Voltage vs Collector Current
h F E - TYPICAL PULSED CURRENT GAIN

250 0.3
V CE = 1 .0V β = 10
0.25
125 °C
200
0.2

150 0.15 25 °C
25 °C
0.1
100 125°C
- 40 °C
0.05
- 40 °C

50 0
0.1 0.2 0.5 1 2 5 10 20 50 100 1 10 100 200
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation Base Emitter ON Voltage vs


Voltage vs Collector Current Collector Current
VBE( ON)- BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)

1
1 β = 10
- 40 °C
0.8
0.8
- 40 °C
25 °C
125 °C 0.6 25 °C
0.6
125 °C
0.4 0.4

V CE = 1V
0.2 0.2

0 0
1 10 100 200 0.1 1 10 25
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current Common-Base Open Circuit


vs Ambient Temperature Input and Output Capacitance
I CBO - COLLE CTOR CURRENT (nA)

100
vs Reverse Bias Voltage
V = 25V
CB 10
C obo
10
CAPACITANCE (pF)

1 6

4 C ibo
0.1
2

0.01 0
25 50 75 100 125 0.1 1 10
TA - AMBIE NT TEMP ERATURE (° C) REVERSE BIAS VOLTAGE (V)
2N3905
PNP General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Noise Figure vs Frequency Noise Figure vs Source Resistance


6 12
V CE = 5.0V V CE = 5.0V
5 f = 1.0 kHz
10
NF - NOISE FIGURE (dB)

NF - NOISE FIGURE (dB)


I C = 1.0 mA
4 8

3 I C = 100 µA, R S = 200Ω 6

2 4
I C = 1.0 mA, R S = 200Ω I C = 100 µA

1 2
I C = 100 µA, R S = 2.0 kΩ

0 0
0.1 1 10 100 0.1 1 10 100
f - FREQUENCY (kHz) R S - SOURCE RESISTANCE ( kΩ )

Switching Times Turn On and Turn Off Times


vs Collector Current vs Collector Current
500 500

ts t off
100 100
TIME (nS)

TIME (nS)

Ic
t on I
tf B1 = 10 t on

VBE(OFF) = 0.5V
10 10
tr
Ic Ic
I B1 = I B2 = t off I = I =
10 B1 B2 10
td

1 1
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA)

Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)

SOT-223
0.75
TO-92

0.5
SOT-23

0.25

0
0 25 50 75 100 125 150
TEMPERATURE (o C)
2N3905
PNP General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Voltage Feedback Ratio Input Impedance


)
_ 4

100 10
VCE = 10 V
h re - VOLTAGE FEEDBACK RATIO (x10

f = 1.0 kHz

h ie - INPUT IMPEDANCE (k Ω)
10 1

1 0.1
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Output Admittance Current Gain


1000 1000
h oe - OUTPUT ADMITTANCE ( µmhos)

V CE = 10 V V CE = 10 V
f = 1.0 kHz f = 1.0 kHz
500
h fe - CURRENT GAIN

200

100 100

50

20

10 10
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ FASTr™ PowerTrench  SyncFET™


Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™
CoolFET™ GTO™ QS™ UHC™
CROSSVOLT™ HiSeC™ QT Optoelectronics™ VCX™
DOME™ ISOPLANAR™ Quiet Series™
E2CMOSTM MICROWIRE™ SILENT SWITCHER 
EnSignaTM OPTOLOGIC™ SMART START™
FACT™ OPTOPLANAR™ SuperSOT™-3
FACT Quiet Series™ PACMAN™ SuperSOT™-6
FAST  POP™ SuperSOT™-8

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER


NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G

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