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IPD50R380CE

MOSFET
500VCoolMOSªCEPowerTransistor DPAK

CoolMOS™isarevolutionarytechnologyforhighvoltagepower tab
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand 2
offeringthebestcostdownperformanceratioavailableonthemarket. 1

Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness Drain
•Easytouse/drive Pin 2
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Gate
Pin 1

Applications Source
PFCstages,hardswitchingPWMstagesandresonantswitchingstages Pin 3

fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 550 V
RDS(on),max 0.38 Ω
ID 14.1 A
Qg,typ 24.8 nC
ID,pulse 32.4 A
Eoss @ 400V 2.54 µJ

Type/OrderingCode Package Marking RelatedLinks


IPD50R380CE PG-TO 252 50S380CE see Appendix A

Final Data Sheet 1 Rev.2.3,2016-06-13


500VCoolMOSªCEPowerTransistor
IPD50R380CE

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Final Data Sheet 2 Rev.2.3,2016-06-13


500VCoolMOSªCEPowerTransistor
IPD50R380CE

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 14.1 TC = 25°C
Continuous drain current1) ID A
- - 8.9 TC = 100°C
Pulsed drain current2) ID,pulse - - 32.4 A TC=25°C
Avalanche energy, single pulse EAS - - 173 mJ ID =4A; VDD = 50V
Avalanche energy, repetitive EAR - - 0.26 mJ ID =4A; VDD = 50V
Avalanche current, repetitive IAR - - 4.0 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V
-20 - 20 static;
Gate source voltage VGS V
-30 - 30 AC (f>1 Hz)
Power dissipation (non FullPAK)
Ptot - - 98 W TC=25°C
TO-252
Operating and storage temperature Tj,Tstg -55 - 150 °C -
Continuous diode forward current IS - - 10 A TC=25°C
Diode pulse current 2)
IS,pulse - - 32.4 A TC = 25°C
VDS=0...400V,ISD<=IS,Tj=25°C,
Reverse diode dv/dt3) dv/dt - - 15 V/ns
tcond<2µs
VDS=0...400V,ISD<=IS,Tj=25°C,
Maximum diode commutation speed3) dif/dt - - 500 A/µs
tcond<2µs

2Thermalcharacteristics

Table3Thermalcharacteristics(nonFullPAK)TO-252
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 1.27 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Soldering temperature, wavesoldering
Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
only allowed at leads

1)
Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5
2)
Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
Final Data Sheet 3 Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE

3Electricalcharacteristics

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.26mA
- - 1 VDS=500V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=500V,VGS=0V,Tj=150°C
Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V
- 0.35 0.38 VGS=13V,ID=3.2A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.90 - VGS=13V,ID=3.2A,Tj=150°C
Gate resistance RG - 3 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 584 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 40 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
Co(er) - 32 - pF VGS=0V,VDS=0...400V
related1)
Effective output capacitance, time
Co(tr) - 133 - pF ID=constant,VGS=0V,VDS=0...400V
related2)
VDD=400V,VGS=13V,ID=3.9A,
Turn-on delay time td(on) - 7.2 - ns
RG=3.4Ω
VDD=400V,VGS=13V,ID=3.9A,
Rise time tr - 5.6 - ns
RG=3.4Ω
VDD=400V,VGS=13V,ID=3.9A,
Turn-off delay time td(off) - 35 - ns
RG=3.4Ω
VDD=400V,VGS=13V,ID=3.9A,
Fall time tf - 8.6 - ns
RG=3.4Ω

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 3.1 - nC VDD=400V,ID=3.9A,VGS=0to10V
Gate to drain charge Qgd - 13.1 - nC VDD=400V,ID=3.9A,VGS=0to10V
Gate charge total Qg - 24.8 - nC VDD=400V,ID=3.9A,VGS=0to10V
Gate plateau voltage Vplateau - 5.3 - V VDD=400V,ID=3.9A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Final Data Sheet 4 Rev.2.3,2016-06-13
500VCoolMOSªCEPowerTransistor
IPD50R380CE

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.85 - V VGS=0V,IF=3.9A,Tf=25°C
Reverse recovery time trr - 207 - ns VR=400V,IF=3.9A,diF/dt=100A/µs
Reverse recovery charge Qrr - 1.7 - µC VR=400V,IF=3.9A,diF/dt=100A/µs
Peak reverse recovery current Irrm - 15.5 - A VR=400V,IF=3.9A,diF/dt=100A/µs

Final Data Sheet 5 Rev.2.3,2016-06-13


500VCoolMOSªCEPowerTransistor
IPD50R380CE

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
100 102

90

1 µs
80
1
10
70
10 µs

60
100 µs
Ptot[W]

ID[A]
0
1 ms
50 10
10 ms

40
DC
30
10-1
20

10

0 10-2
0 40 80 120 160 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
2
10 101

1 µs
101

10 µs 100
0.5
ZthJC[K/W]

0.2
ID[A]

100 µs
100
1 ms 0.1
10 ms 0.05
-1
0.02
10
DC
10-1
0.01
single pulse

10-2 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 6 Rev.2.3,2016-06-13


500VCoolMOSªCEPowerTransistor
IPD50R380CE

Typ.outputcharacteristicsTj=25°C Typ.outputcharacteristicsTj=125°C
40 25

35 20 V 20 V
10 V
20
30 10 V

8V
8V
25
15
7V
ID[A]

ID[A]
20
7V
10
15 6V

5.5 V
10 6V
5
5.5 V 5V
5 4.5 V
5V
4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Typ.drain-sourceon-stateresistance Drain-sourceon-stateresistance
1.4 1.2

1.0

1.2

5.5 V 6.5 V 7V 0.8


5V 6V
98%
RDS(on)[Ω]

RDS(on)[Ω]

1.0 0.6 typ

10 V 0.4

0.8

0.2

0.6 0.0
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 175
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=3.2A;VGS=13V

Final Data Sheet 7 Rev.2.3,2016-06-13


500VCoolMOSªCEPowerTransistor
IPD50R380CE

Typ.transfercharacteristics Typ.gatecharge
35 10

25 °C
9
30
8
120 V
25 7
400 V

6
20

VGS[V]
ID[A]

15 150 °C
4

10 3

2
5
1

0 0
0 2 4 6 8 10 0 10 20 30
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=3.9Apulsed;parameter:VDD

Avalancheenergy Drain-sourcebreakdownvoltage
200 580

180
560
160

140 540

120
520
EAS[mJ]

VBR(DSS)[V]

100

500
80

60 480

40
460
20

0 440
0 25 50 75 100 125 150 175 -60 -20 20 60 100 140 180
Tj[°C] Tj[°C]
EAS=f(Tj);ID=4A;VDD=50V VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 8 Rev.2.3,2016-06-13


500VCoolMOSªCEPowerTransistor
IPD50R380CE

Typ.capacitances Typ.Cossstoredenergy
4
10 4.0

3.5

103 Ciss 3.0

2.5

Eoss[µJ]
C[pF]

102 2.0
Coss
1.5

101 1.0
Crss

0.5

100 0.0
0 100 200 300 400 500 0 100 200 300 400 500
VDS[V] VDS[V]
C=f(VDS);VGS=0V;f=1MHz Eoss=f(VDS)

Forwardcharacteristicsofreversediode
102

101

125 °C
IF[A]

25 °C

100

10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD[V]
IF=f(VSD);parameter:Tj

Final Data Sheet 9 Rev.2.3,2016-06-13


500VCoolMOSªCEPowerTransistor
IPD50R380CE

5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

V ,I
Rg1 VDS( peak)
VDS
VDS

VDS IF
trr
tF tS
Rg 2 dIF / dt
IF t
QF QS 10 %Irrm
IF dIrr / dt trr =tF +tS
Irrm Qrr = QF + QS
Rg1 = Rg 2

Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS
ID VDS

VDS VDS
ID

Final Data Sheet 10 Rev.2.3,2016-06-13


500VCoolMOSªCEPowerTransistor
IPD50R380CE

6PackageOutlines

*) mold flash not included

MILLIMETERS INCHES
DIM
MIN MAX MIN MAX
A 2.16 2.41 0.085 0.095
A1 0.00 0.15 0.000 0.006
b 0.64 0.89 0.025 0.035
b2 0.65 1.15 0.026 0.045 DOCUMENT NO.
b3 5.00 5.50 0.197 0.217 Z8B00003328
c 0.46 0.60 0.018 0.024
c2 0.46 0.98 0.018 0.039 SCALE 0
D 5.97 6.22 0.235 0.245
D1 5.02 5.84 0.198 0.230
2.0
E 6.40 6.73 0.252 0.265
E1 4.70 5.60 0.185 0.220 0 2.0
e 2.29 (BSC) 0.090 (BSC) 4mm
e1 4.57 (BSC) 0.180 (BSC)
N 3 3
EUROPEAN PROJECTION
H 9.40 10.48 0.370 0.413
L 1.18 1.70 0.046 0.067
L3 0.90 1.25 0.035 0.049
L4 0.51 1.00 0.020 0.039
F1 10.60 0.417
F2 6.40 0.252 ISSUE DATE
F3 2.20 0.087 01-09-2015
F4 5.80 0.228
F5 5.76 0.227 REVISION
F6 1.20 0.047 05

Figure1OutlinePG-TO252,dimensionsinmm/inches

Final Data Sheet 11 Rev.2.3,2016-06-13


500VCoolMOSªCEPowerTransistor
IPD50R380CE

7AppendixA

Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 12 Rev.2.3,2016-06-13


500VCoolMOSªCEPowerTransistor
IPD50R380CE

RevisionHistory
IPD50R380CE

Revision:2016-06-13,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2012-08-24 Release of final version
2.1 2013-07-16 update to Halogen free mold compound
2.2 2015-11-17 Update to qualified for standard grade and updated package drawing
2.3 2016-06-13 Updated ID ratings, Zth, SOA and Pd curves

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2016InfineonTechnologiesAG
AllRightsReserved.

LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).

Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 13 Rev.2.3,2016-06-13

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