AP4435GM-HF

Halogen-Free Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D

BVDSS -30V
D
▼ Low On-resistance D RDS(ON) 20mΩ
D
▼ Fast Switching Characteristic ID -9A
G
▼ RoHS Compliant S
S
SO-8 S

Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness. G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage - 30 V
VGS Gate-Source Voltage + 20 V
3
ID@TA=25℃ Continuous Drain Current -9 A
3
ID@TA=70℃ Continuous Drain Current -7.3 A
1
IDM Pulsed Drain Current -50 A
PD@TA=25℃ Total Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 50 ℃/W

Data and specifications subject to change without notice 1

200811216
AP4435GM-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-7A - - 20 mΩ
VGS=-4.5V, ID=-5A - - 32 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-7A - 16 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
2
Qg Total Gate Charge ID=-7A - 18 29 nC
Qgs Gate-Source Charge VDS=-24V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 10 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 8 - ns
tr Rise Time ID=-1A - 6.6 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 44 - ns
tf Fall Time RD=15Ω - 34 - ns
Ciss Input Capacitance VGS=0V - 1175 1690 pF
Coss Output Capacitance VDS=-25V - 195 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 190 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-2.1A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-7A, VGS=0V, - 28 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 18 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP4435GM-HF

50 50

o -10V o
T A =25 C T A =150 C -10V
-7.0V -7.0V
40 -5.0V 40
-5.0V
-ID , Drain Current (A)

-ID , Drain Current (A)

-4.5V -4.5V

30 30
V G = -3.0V
V G = -3.0V

20 20

10 10

0 0
0 1 2 3 4 0 2 4 6

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

32 1.6

I D = -5A I D = -7A
28 T A =25 o C 1.4
V G = -10V
Normalized RDS(ON)
RDS(ON) (mΩ)

24 1.2

20 1.0

16 0.8

12 0.6
2 4 6 8 10 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 2

1.8
8

1.6
T j =150 o C T j =25 o C
-VGS(th) (V)

6
-IS(A)

1.4

1.2

2
1

0 0.8
0.1 0.3 0.5 0.7 0.9 1.1 1.3 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP4435GM-HF
f=1.0MHz
12 10000
-VGS , Gate to Source Voltage (V)

10

I D = -7A
V DS = -24V
8

C (pF)
6 1000
C iss

2
C oss
C rss

0 100
0 10 20 30 40 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100.00 1
Normalized Thermal Response (Rthja)

Duty factor=0.5

10.00

100us 0.2

1ms
-ID (A)

0.1
1.00 0.1
10ms
0.05
PDM
100ms t

0.10 1s T
0.02

o
T A =25 C DC
0.01 Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Single Pulse Rthja = 125℃/W

0.01
0.01
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

40

V DS = -5V T j =25 o C T j =150 o C VG

30
QG
-ID , Drain Current (A)

-4.5V

20 QGS QGD

10

Charge Q
0
0 1 2 3 4 5 6

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit

4
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : SO-8

D
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
8 7 6 5
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
E1 E
c 0.19 0.22 0.25
D 4.80 4.90 5.00
1
2 3 4 E 5.80 6.15 6.50
E1 3.80 3.90 4.00
e 1.27 TYP
e G 0.254 TYP
B L 0.38 － 0.90
α 0.00 4.00 8.00

A1

1.All Dimension Are In Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : SO-8

Part Number
Package Code
meet Rohs requirement
4435GM
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product