H

Optical Reflective Sensors Technical Data

HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor

Features
Focused Emitter and Detector in a Single Package TO5 Package Binning of Sensors by Photocurrent (Ipr)

Description
Both the HEDS-1200 and HEDS1300 sensor are fully integrated modules designed for applications requiring optical reflective sensing. The modules contain an LED emitter (at the appropriate wavelengths) and a matched I.C. photodetector. A bifurcated aspheric lens is used to image the active areas of the emitter and the detector to a single spot that defines the resolution of the sensor. The output signal is a current generated by the photodiode.

Applications
Bar Code Scanning Pattern Recognition and Verification Object Sizing Optical Limit Switching Optical/Surface Inspection Tachometry Edge/Line Sensing Dimensional Monitoring

Selection Guide
Sensor Part Number Resolution HEDS-1200 0.13 mm (0.005 in.) 820 nm
S.P.

HEDS-1300 0.19 mm (0.0075 in.) 700 nm

R.P.

Package Dimensions
MAXIMUM SIGNAL POINT MSP REFERENCE PLANE

LED Wavelength
9.40 (0.370) 8.51 (0.335) 5.08 (0.200)

12.0 (0.473)

C L 1.14 (0.045) 0.73 (0.029) 5.08 (0.200) 4.27 0.25 (0.168 0.010) Z 0.86 (0.034) 0.73 (0.029) 15.24 (0.600) 12.70 (0.500)

8.33 (0.328) 7.79 (0.307)

11.50 (0.453) 11.22 (0.442)

NOTES: 1. ALL DIMENSIONS IN MILLIMETERS AND (INCHES). 2. ALL UNTOLERANCED DIMENSIONS ARE FOR REFERENCE ONLY. 3. THE REFERENCE PLANE (R.P.) IS THE TOP SURFACE OF THE PACKAGE. 4. NICKEL CAN AND GOLD PLATED LEADS. 5. S.P. = SEATING PLANE. 6. THE LEAD DIAMETER IS 0.45 mm (0.018 IN.) TYP.

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5965-5947E

Mechanical Considerations
The HEDS-1200 and HEDS-1300 sensors are packaged in a high profile 8 pin TO5 metal can with a glass window. The emitter and photodetector chips are mounted on the header at the base of the package. Positioned above these active elements is a bifurcated aspheric acrylic lens that focuses them to the same point. The sensors can be rigidly secured by commercially available TO5 style heat sinks, or 8 pin 0.200 inch diameter pin circle sockets. These fixtures provide a stable reference platform for affixing the sensors to a circuit board. In applications requiring contact scanning, protective focusing tips are available. Focusing tips are available in either metal (HBCS2999 or HBCS-4999) or polycarbonate (HBCS-A998 or HBCS-A999) packages using a rugged sapphire ball as the contact surface.

HEDS-1200 Optical System

SCHEMATIC DIAGRAM CONNECTION DIAGRAM

REFLECTOR 8 REFERENCE PLANE Z 1 7

2 DP 6 LED DS 2 4 CASE, SUBSTRATE TOP VIEW DP 3 3 DS 4 5 LED

PIN # 2 3 4 6

FUNCTION (HEDS-1200) PHOTODIODE ANODE, SUBSTRATE, CASE PHOTODIODE CATHODE LED CATHODE, SUBSTRATE, CASE LED ANODE

HEDS-1300 Optical System

SCHEMATIC DIAGRAM CONNECTION DIAGRAM TRANSISTOR NOT SPECIFIED

Electrical Operations
Both the HEDS-1200 and HEDS1300 sensors have the following in common. The detector of the sensor is a single photodiode. The cathode of the emitter is physically and electrically connected to the case-substrate of the device. Applications that require modulation or switching of the LED should be designed to have the cathode connected to the electrical ground of the system. Refer to the Schematic and Connection Diagrams that follow.
REFLECTOR

8* REFERENCE PLANE Z 1* 7

2 DP 6 LED DS DS 4 *NO CONNECTION TO BE MADE TO PIN 1 AND PIN 8 PIN # 2 3 4 6 FUNCTION (HEDS-1300) PHOTODIODE ANODE PHOTODIODE CATHODE LED CATHODE, SUBSTRATE, CASE LED ANODE TOP VIEW 2 1* 8* 3 3 LED 5 4

DS

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Absolute Maximum Ratings @ TA = 25C

Parameter Storage Temperature Operating Temperature Lead Soldering Temperature 1.6 mm from Seating Plane Average LED Forward Current Peak LED Forward Current Reverse LED Input Voltage Photodiode Bias (Id = 100 A max) If Ifpk Vr Vd Symbol Ts TA HEDS1200 1300 1200 1300 1200 1300 1200 1300 1200 1300 1200 1300 1200 1300 -0.3 -0.3 10 Min. -40 -40 -20 -20 Max. +75 +75 +70 +70 260C for 10 sec. 40 50 40 75 2.5 5.0 20 20 mA mA mA mA V V V V 5 5 7 7 Units C C C C 1 1 3 2 4 4 Fig. Notes

Notes: 1. Caution: The thermal constraints of the acrylic lens will not permit the use of conventional wave soldering procedures. The typical preheat and post-cleaning temperatures and dwell times can subject the lens to thermal stresses beyond the absolute maximum ratings and can cause it to defocus. 2. Derate Maximum Average Current linearly from 65C by 6 mA/C [HEDS-1300 only]. 3. Non-linear effects make operation of the HEDS-1200 below 10 mA not advisable. 4. 1 KHz pulse rate, 300 mS pulse width. 5. All voltages referenced to Pin 4.

System Electrical/Optical Characteristics @ TA = 25C

Parameter Reflected Photocurrent Quality Factor Ipr Temperature Coefficient System Optical Step Response Size (OSR) Maximum Signal Point (MSP) Effective Numerical Aperture of Detector Lens Symbol Ipr <Q> Ke d Zm N.A. HEDS1200 1300 1200 1300 1200 1300 1200 1300 1200 1300 1200 1300 4.01 4.01 Min. 150 150 0.82 0.82 Typ. 280 280 0.95 0.95 -0.005 -0.01 0.13 0.19 4.27 4.27 0.3 0.3 4.62 4.52 Max. 650 650 1.0 1.0 1/C 1/C mm mm mm mm Measured from Reference Plane Units nA nA Conditions Fig. Notes 6 6 6, 7 6, 7 8 8 9A 9B 4 4 9 9 If = 35 mA, Vd = 0 1A, 2, 6 See Binning Table 1B, 2, 6 If = 35 mA If = 35 mA 1A 1B

Notes: 6. Measured from a reflector coated with 99% diffuse reflective white paint (Kodak 6080) positioned 4.27 mm (0.168 in.) from the sensors reference plane. Measured physically is the total photocurrent, Ipt, which consists of a signal (reflected from target) component, Ipr, and a component induced by reflections internal to the sensor (stray), Ips. Ipr = Ipt - Ips. 7. <Q> = Ipr/Ipt 8. Photocurrent variation with temperature follows a natural exponential law: Ip(T) = Ip(To)*exp[Ke(T-To)] 9. OSR size is defined as the distance for the 10%-90% step response of Ipr as the sensor moves over an abrupt black-white edge, or from opaque white to free space (no reflection).

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Detector Electrical/Optical Characteristics @ TA = 25C

Parameter Dark Current Capacitance Detector Area Symbol Id Cd Ad HEDS1200 1300 1200 1300 1200 1300 Min. Typ. 50 50 100 100 0.16 0.16 Max. 1000 1000 Units pA pA pF pF sq-mm sq-mm Conditions Vd = 5 V, If = 0 Reflection = 0% Vd = 0 V, If = 0 f = 1 MHz Square, with length = 0.4 mm per side Fig. Notes

Emitter Electrical/Optical Characteristics @ TA = 25C

Parameter Forward Voltage Reverse Breakdown Voltage Thermal Coefficient of Vf Peak Wavelength Emitting Area Symbol Vf BVR Vf/T Ae HEDS1200 1300 1200 1300 1200 1300 1200 1300 1200 1300 805 680 2.5 5.0 -0.91 -1.2 820 700 0.0062 0.0285 835 720 Min. Typ. 1.48 1.6 Max. 1.7 1.8 Units V V V V mV/C mV/C nm nm sq-cm sq-cm Conditions If = 35 mA Ir = 100 A If = 35 mA If = 35 mA 0.0889 mm diameter junction (0.0035 in.) 0.185 mm diameter junction (0.0073 in.) 5 5 Fig. 3 3 Notes

Bin Table
Ipr Limits (nA) Bin # 2 3 4 5 6 7 8 Min. 150 195 240 288 350 425 515 Max. 200 245 293 355 430 520 650

Product Marking
The photocurrent binning of the sensor is included in the 8-digit code printed on the sensor can. The last digit in the code represents the bin number. See Figure 8 for suggestions in the application of photocurrent bins. Test algorithm bins units to the lowest bin number if a unit is in the overlap region. Such units can cross bin boundaries as temperature changes. (Ambient temper-

ature affects LED efficiency slightly and may cause several percent changes in Ipr). Bin numbers are for reference only and do not constitute an absolute guarantee. The output of all LEDs degrades with time, depending on drive conditions and temperature. The entire available distribution of parts, appropriately marked, will be shipped. Single bin orders cannot be supplied.

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HEDS-1200 Optical System

OPTICAL APERTURE BAFFLE EPOXY SEAL

HEDS-1300 Optical System

EMITTER 0.089 mm DIA. JUNCTION

SILICON BAFFLE

EMITTER 0.185 mm DIA. JUNCTION

BAFFLE

EPOXY SEAL

SENSING AREA

SENSING AREA

GLASS

GLASS

DETECTOR 0.406 mm SQUARE

LENS

DETECTOR 0.406 mm SQUARE

LENS

REFLECTOR REFERENCE PLANE Z

REFLECTOR
DP 2 1 DS DS SUBSTRATE, CASE nA-METER 8 3 4 IPT

REFERENCE PLANE

+ VF 6 LED IF = 35 mA

DP + VF 6 LED IF = 35 mA 4 CASE, SUBSTRATE DS 2 3

IPT

nA-METER

IPT = IPR + IPS IPS : MEASURED IN THE DARK IPR : WITH Z = 4.27 mm

nA-METER: KEITHLEY MODEL 480 (OR EQUIVALENT)

Figure 1A. HEDS-1200 Photocurrent Test Circuit.

Figure 1B. HEDS-1300 Photocurrent Test Circuit.

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1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0

1.8
VF FORWARD VOLTAGE V

HEDS-1300 MSP RANGE 1.0

PHOTOCURRENT NORMALIZED TO PEAK @ MSP

HEDS-1200 MSP RANGE

PHOTOCURRENT NORMALIZED AT IF = 35 mA, TA = 25 C

HEDS-1300

HEDS-1200 0.8

1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 1 A 10 A 100 A 1 mA 10 mA 100 mA HEDS-1200 HEDS-1300

0.6

0.4

0.2 HEDS-1300 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

HEDS-1200 0 5 10 15 20 25 30 35 40 45 50 IF LED FORWARD CURRENT mA

IF FORWARD CURRENT (LOG SCALE)

DISTANCE FROM REFERENCE PLANE OF SENSOR mm

Figure 2. Relative Reflected Photocurrent.

Figure 3. LED Forward Voltage vs. Forward Current.

Figure 4. Photocurrent Variation with Distance.

LIGHT OUTPUT (NORMALIZED TO 25 C VALUE)

HEDS-1300 0 C

1.2 1.0 0.8

HEDS-1200 -40 C

RESPONSE @ GIVEN WAVELENGTH NORMALIZED TO PEAK

1.4

1.0

IFPK (MAX.) RATIO OF MAXIMUM OPERATING PEAK IF (MAX.) CURRENT TO TEMPERATURE DERATED MAXIMUM DC CURRENT

1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0
100 H

0.8 TYP. PEAK RESPONSIVITY Re = 0.34 AMP/WATT

25 C 70 C

25 C

HEDS-1300 ONLY

0.6

0.6 0.4 0.2

85 C

0.4 LOW-PASS FILTERING OF AMBIENT LIGHT CAUSED BY RED LENS

300 H

1 KHz

3 KHz

30 KHz

10 KHz

0.2

0 600 640 680 720 760 800 840 880 920 WAVELENGTH nm

0 600

700

800

900

HEDS-1200 ONLY 1 10

100

1000

10,000

WAVELENGTH nm

tP PULSE DURATION (s)

Figure 5. Typical Spectral Distribution of LEDs.

Figure 6. Relative Spectral Response of HEDS-1200 and HEDS-1300 Sensors.

Figure 7. Sensor Pulse Drive Considerations. Max Tolerable Peak Pulse Current vs. Pulse Duration.

REFLECTOR REFERENCE PLANE Z

RF +5 V DS 4 CASE, SUBSTRATE 2 + VO

NOTE: FOR VO (APPROX.) 1.9 2.4 VOLTS SENSOR RECOMMENDED VALUE BIN NUMBER OR RF (OHMS) 2 3 4 5 6 7 8 15 M 12 M 10 M 8.2 M 6.8 M 5.6 M 4.7 M

IF

DP 6 LED 3

IPT

VO = RF x |IPT|

Figure 8. Sensor with Transimpedance Amplifier.

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NORMALIZED SIGNAL

Preferred Orientation
d SYSTEM RESPONSE mm

1.0

100 % WHITE 90 % d 10 % 0

0.8

0.6

BLACK

0.4

NON-PREFERRED ORIENTATION

0.2 PREFERRED ORIENTATION 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

NORMALIZED SIGNAL

d SYSTEM RESPONSE mm

At maximum signal point (MSP) and/or when the sensor is in focus, the orientation of the sensor is unimportant. However, as one moves away from MSP and/or moves out of focus (either by distance or angle), the preferred orientation indicated above is recommended to maintain a higher resolution spot size.

DISTANCE FROM REFERENCE PLANE OF SENSOR mm

Figure 9A. HEDS-1200 System Optical Step Response Variation with Distance.

1.0

100 % WHITE 90 % d 10 % 0

0.8

NON-PREFERRED ORIENTATION

0.6

BLACK

0.4

0.2 PREFERRED ORIENTATION 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

DISTANCE FROM REFERENCE PLANE OF SENSOR mm

Figure 9B. HEDS-1300 System Optical Step Response Variation with Distance.

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Warranty and Service

HP Optical Reflective Sensor is warranted for a period of one year after purchase covering defects in material and workmanship. Hewlett-Packard will repair or, at its option, replace products that prove to be defective in material or workmanship under proper use during the warranty period.

NO OTHER WARRANTIES ARE EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. HEWLETT-PACKARD IS NOT LIABLE FOR CONSEQUENTIAL DAMAGES.

For additional warranty or service information please contact your local Hewlett-Packard sales representative or authorized distributor.

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