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i ~ )/ ,.a,+ zx _P r i,

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ri.t, *: ,;:: : ii, i r. * __ -: 8 ?1 ~ <

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1 jj I>:.

ELECTRICAL

CHARACTERISTICS
Characteristic

(TA = 25C

unless otherwise

noted) Svmbol Min 8.0 9.0 10 11 12 13

*Forward

Switching

Voltage

IN5158, IN5159, IN5160, IN5779, IN5780, IN5781,

IN5782, IN5783, IN5784, IN5785, IN5786, 1N5787,

IN5788 IN5789 IN5790 IN5791 IN5792 1N5793 IN5779 ~

Vs

*Forward

Switching

Current

lN5158thru thru IN5781 IN5782 thru

IN5160, IN5793

s IFM

*Forward (VF

Off-State
VS)

Current
1

= 0.75X

-~ IRM ~ \

*Reverse (VR Holding

Current

= VRM) Current lN5158thru thru IN5781 1N5782 IN5788 thru IN5787 thru 1 N5793 IN5160, 1N5779 , I

1.0

10

0.1

I f

Vlps
0.1 ~ I

I
I

0.1
0.1

(AC Voltage Turn-On Turn-Off Time Time = 10 mV, VF = O, f = 100 kHz) (Figure (Figure 2) 3) ~< ,;,:.~ ..$<\* . ...~. .*:* ,,,,\,.*:. .~,l. -.. . ... ,,.. !,, ... ~.. Q o _ on toff _: : 75(1) 250(1)

I
I

0.1

__,

i-i,
: ns

[
!

(+)

SCOPE

(-)

ll

uNIT UNDER . . .. .20: lb

When mwtooth waveform appears at TP-1, T = toff

FIGURE CONDUCTION

4 TYPICAL

FORWARD

CHARACTERISTICS 50

40

30

20

1.0

2.0

3.0 FORWARD

4.0 VOLTAGE

5.0 (VOLTS)

6.0

7.0

1.0

5,0

7.0

VF, INSTANTANEOUS

1.5

75

50

25

O TA, AMBIENT

25

50 TEMPERATURE

75 (OC)

100

125

150

5.0 3.0 2.0

\. \ \

1.0 0.7 0.5 0.3 0.2

\ \ \ \
1

,-.
0.1 I ( 75 50 -25 0 TA, AMBIENT 25 50 75 (C) 100 125 150 75 50 25 O TA, AMBIENT 25 50 75 (C) 100 125

1
150 TEMPERATURE

TEMPERATURE

4-LAYER

DIODE

SYMBOLS AND DEFINITIONS

v
1 IR

dvldt Is

FORWARD VOLTAGE APPLICATION The rate of rise of forward voltage.

RATE

(v/Ps)

FORWARD BREAKOVER (swITCHt NG) CURRENT The value of anode current at the instant the device switches from the blocking to the on state, specified at a particular junction temperature. FORWARD CURRENT The continuous forward current during the on state. PEAK FORWARD BLOCKING CURRENT or DC value.of ,\L*f(. ,:,.,.l~y., TR&.pe~b

IF ] FM

,i;:,\
toff

point (90% of forward blocking voltage) and the 10% above the on voltage under stated conditions.

point

TURN-OFF TIME The time interval required for the device to regain control of its forward blocking characteristic after interruption of forward anode current. FORWARD BREAKOVER (SWITCHING) VOLTAGE The positive anode voltage with respect to cathode required to switch the device from the high impedance blocking state to the low impedance on state, specified at a particular junction temperature. FORWARD VOLTAGE The forward voltage across the device in the on state under stated conditions of current and temperature. FORWARD BLOCKING VOLTAGE The anode-to-cathode voltage when the 4-layer diode is in the off state. PEAK REVERSE VOLTAGE The maximum allowable instantaneous value of reverse voltage (repetitive or continuous DC) which can be applied to the device at a stated temperature without damage to the device.

IH

pulse

anode current when the 4-layer diode is in the.;@$?*~?&te for a stated anode-to-cathode voltage and jun,~~~~ &per,,t:,,*..:j.i,,1$,$ \ ture. 1...,,, ..,> !4 HOLDING CURRENT That value $ $$:, ~~hard anode current below wh; ch the 4-laVer dio~$+~fi~$dhes from the conducting state to the forward bl.o*,&{,~,$~kon dition. ,il,$):~ PEAK PULSE CURRENT T$e ~ah repetitive current that can flow stated. through th:,+@@%~&~.*r the time duration y.! !&, .1.. ~: ,,.,,.s> ,).,,,.,,. B~~~~~ CURRENT The peak

Vs

VF

VFE VRM

IRM

PEAK

REVERSE

current when the, $-Ia~~$,:@ode is in the reverse blocking state for a state@ a@ode~to-cathode voltage and junction temperature. ;~~~++ pD STEADY ~~~~$$P~WER ~ *i ,,.:;>:.,,~~.~ ,.. DISSIPATION

Mechanical

CHARACTERISTICS

CASE: Hermetically sealed all glass case DIMENSIONS: JEDEC DO-7 Outline FINISH: All external surfaces are corrosion resistant with readily POLARITY: Cathode end indicated bv color band. WEIGHT: 0.2 grams (approx.) MOUNTING POSITION: AnV

solderable

leads.

(M) u

MOTOROLA
u
969-5 PRINTED IN USA 12-72 OX 20912 LITHO B33663 . IMPERIAL

Semiconductor
PHOENIX, 6,\4 AR]20NA 85036 . A SUBSIDIARY

Products
OF MOTOROLA INC.

Inc.
N 6510R1

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