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Power Management
[ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ]
Our innovative Energy Efficiency technologies are a vital contribution to a sustainable and green life on this planet. We are ready to partner with you on concepts for a better world and a better future. Infineons products stand out for reliability, quality excellence and technology leadership in power supply, power distribution and renewable energy. Our goal is to create competitive advantages for our customers by driving innovative power architectures, leadership in power density and enabling systems with best cost performance ratio for notebook, server, desktop and graphic cards, consumer SMPS, notebook adapter, PC silverbox, server power supply, e-mobility, solar, telecom supply, industrial welding, induction cooking and aircon. We would like to invite you to explore our broad offer of leading energy efficient products supporting your application needs.
Highly efficient solutions for consumer and computing Infineons latest portfolio of consumer and computing products are consequently optimized along the requirements of the next generation of highest efficient solutions
Regardless for which renewable solution you are looking for, Infineon has the optimal power semiconductor devices to reduce system costs and gain highest efficiency and lifetime
Smart appliances High efficiency chips the perfect ingredients in the kitchen offering consumers outstanding features and energy saving
Full range of solutions for e-cars and e-bikes Infineon offers the complete set of power train and charging solutions for future mobility concepts perfectly complementing the body, convenience and safety portfolio
Contents
Applications Notebook Server, Desktop and Graphic Cards Consumer SMPS Notebook Adapter PC Silverbox Server Power Supply Telecom Power Supply E-Mobility Solar Industrial Welding Induction Heating Aircon 8 8 9 10 11 12 14 15 16 18 20 21 22
24
48
60
Segment IGBT
66
76
Packages
106
Support
168
Notebook
Best Solutions for Small and Cool System Power
Benchmark technologies significantly improve switching losses in power stages and drivers and thus improve battery lifetime and system reliability. Highest efficiency at all load conditions enables system designers to overcome thermal challenges to reach a new level of system miniaturization. Our latest portfolio of notebook products are consequently optimized along the requirements of the next generation notebook platforms and are easy to design in.
AC Adapter
OptiMOSTM
OptiMOSTM
Gate Driver
OptiMOSTM
OptiMOSTM OptiMOSTM
CP U, GPU
Notebook
DC / DC
Topology
buck converter
Voltage Class
30V
Technology
New OptiMOS
Selection
recommendation
Gate Driver
OptiMOSTM
Gate Driver
OptiMOSTM
CP U, GPU
Topology
buck converter buck converter
Voltage Class
25V 30V
Technology
New OptiMOS New OptiMOS
Selection
recommendation reference
Applications
Consumer SMPS
Cost-effective Products for Consumer SMPS
We offer a wide range of cost-effective products for consumer switch mode power supplies (SMPS). This includes high voltage MOSFETs, control ICs and Silicon Carbide diodes for PFC and PWM stages, as well as low voltage MOSFETs for synchronous rectification. With these products Infineon supports the trends towards continuously reducing power consumption. Especially versatile is the new CoolMOS C6/E6 family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For synchronous rectification we recommend our OptiMOS series offering extremely low on-state resistance and low capacitances. New control ICs support topologies such as quasi-resonant flyback and LLC.
Control ICs
AC
Vin
PFC
Vbulk
Main Stage
Rectication
Vout
DC
Consumer SMPS
AC / DC PFC PFC PFC
Topology
Voltage Class
600V 600V 600V 600V 600V 600V 650V 650V 650V 650V 600V 650V 600V 650V 900V 900V 900V 800V 800V 800V 650V 600V 650V 600V 500V 600V 150-250 V 650-800V
Technology
CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS CP CoolMOS CP CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS CP CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CFD2 CoolMOS C3 CoolMOS C3 CoolMOS C3 CoolMOS C3 CoolMOS C3 CoolMOS C3 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 OptiMOS CoolSET
Selection
ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation Recommendation Recommendation
DC / DC
2 Switch-Forward DC-DC (TTF) 2 Switch-Forward DC-DC (TTF) 2 Switch-Forward DC-DC (TTF) Flyback DC-DC Flyback DC-DC Flyback DC-DC Single stage Single stage LLC HB DC-DC LLC HB DC-DC LLC HB DC-DC Quasi-Resonat Flyback DC-DC Quasi-Resonat Flyback DC-DC Quasi-Resonat Flyback DC-DC Active Clamp Forward Active Clamp Forward Active Clamp Forward ZVS Asum. Half-Bridge DC-DC ZVS Asum. Half-Bridge DC-DC ZVS Asum. Half-Bridge DC-DC ITTF ITTF ITTF CoolSET
Rectification Aux
10
Notebook Adapter
Leading-edge Technologies for Notebook Adapters
We offer a wide range of products for notebook adapters including high voltage MOSFETs and control ICs for both PFC and PWM stage, as well as low voltage MOSFETs for synchronous rectification. With these products Infineon supports the trends towards a significantly higher efficiency level, especially in partial load condition, as well as towards miniaturization of the adapter. Especially versatile is the CoolMOS C6/E6 family which combines good efficieny with ease of use. For synchronous rectification we recommend our OptiMOS series, offering extremely low on-state resistance and low capacitances. New control ICs support topologies such as quasi-resonant flyback and LLC, which gain market share within the notebook adapter segment.
Control ICs
AC
Vin
PFC
Vbulk
Main Stage
Rectication
Vout
DC
Microcontroller
Notebook Adapter
AC / DC PFC PFC PFC
Topology
Voltage Class
600V 600V 600V 650V 650V 650V 650V 600V 650V 600V 650V 900V 900V 900V 800V 800V 800V 100-120V 650-800V
Technology
CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS CP CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CFD2 CoolMOS C3 CoolMOS C3 CoolMOS C3 CoolMOS C3 CoolMOS C3 CoolMOS C3 OptiMOS CoolSET
Selection
ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation Recommendation Recommendation
DC / DC
Flyback DC-DC Flyback DC-DC Flyback DC-DC Single stage Single stage LLC HB DC-DC LLC HB DC-DC LLC HB DC-DC Quasi-Resonat Flyback DC-DC Quasi-Resonat Flyback DC-DC Quasi-Resonat Flyback DC-DC Active Clamp Forward Active Clamp Forward Active Clamp Forward
Rectification Aux
11
Applications
PC Silverbox
Highest Efficiency with new Topologies for PC Silverbox
The PC Silverbox has seen a tremendous race towards higher efficiency with peak values in the range of 92% and above. Special care is dedicated to the 20% load point. We support these trends with our range of high voltage and low voltage MOSFETs as well as control ICs for power factor correction and PWM. Especially versatile is the CoolMOS C6/E6 family, our latest technology in the superjunction field, which was pioneered by Infineon Technologies. CoolMOS C6/E6 offers easy paralleling and good efficiency even with less ideal PCB layout. The family is specifically recommended for resonant topologies such as LLC due to its high body diode ruggedness, for hard switching topologies such as TTF we recommend the CoolMOS C6/E6. New control ICs support continous current mode PFC and the LLC topology. For the synchronous rectification and the DC/DC we recommend our OptiMOS series, which combine extremely low on-state resistance and low capacitances.
Control ICs
AC
Vin
PFC
Vbulk
Main Stage
Rectication
Vout
AUX
12
AC / DC
PFC PFC PFC 2 Switch-Forward DC-DC (TTF) 2 Switch-Forward DC-DC (TTF) 2 Switch-Forward DC-DC (TTF) Flyback DC-DC Flyback DC-DC Flyback DC-DC Single stage Single stage LLC HB DC-DC LLC HB DC-DC LLC HB DC-DC Quasi-Resonat Flyback DC-DC Quasi-Resonat Flyback DC-DC Quasi-Resonat Flyback DC-DC Active Clamp Forward Active Clamp Forward Active Clamp Forward ZVS Asum. Half-Bridge DC-DC ZVS Asum. Half-Bridge DC-DC ZVS Asum. Half-Bridge DC-DC ITTF ITTF ITTF Synchronous Rectification CoolSET
600V 600V 600V 600V 600V 600V 650V 650V 650V 650V 600V 650V 600V 650V 900V 900V 900V 800V 800V 800V 650V 600V 650V 600V 500V 600V 40-80V 650-800V
CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS CP CoolMOS CP CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS CP CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CFD2 CoolMOS C3 CoolMOS C3 CoolMOS C3 CoolMOS C3 CoolMOS C3 CoolMOS C3 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 OptiMOS CoolSET
ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation Recommendation Recommendation
DC / DC
Rectification Aux
13
Applications
PC Silverbox
Topology
Voltage Class
Technology
Selection
Control ICs
AC
Vin
PFC
Vbulk
Main Stage
Rectication
Vout
DC
AUX
Topology
PFC PFC PFC Bridgless PFC Bridgless PFC Bridgless PFC LLC HB DC-DC LLC HB DC-DC LLC HB DC-DC ZVS Asum. Half-Bridge DC-DC ZVS Asum. Half-Bridge DC-DC ZVS Asum. Half-Bridge DC-DC ZVS Full Bridge Phase Shift ZVS Full Bridge Phase Shift ZVS Full Bridge Phase Shift ITTF ITTF ITTF Synchronous Rectification CoolSET
Voltage Class
600V 600V 600V 600V 600V 600V 650V 600V 650V 650V 600V 650V 650V 600V 650V 600V 500V 600V 40-80V 650-800V
Technology
CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CFD2 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CFD2 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 OptiMOS CoolSET
Selection
ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation Recommendation Recommendation
AC / DC
DC/ DC
Rectification Aux
14
Control ICs
AC
Vin
PFC
Vbulk
Main Stage
Rectication
Vout
DC
AUX
Topology
PFC PFC PFC Bridgless PFC Bridgless PFC Bridgless PFC LLC HB DC-DC LLC HB DC-DC LLC HB DC-DC ZVS Asum. Half-Bridge DC-DC ZVS Asum. Half-Bridge DC-DC ZVS Asum. Half-Bridge DC-DC ZVS Full Bridge Phase Shift ZVS Full Bridge Phase Shift ZVS Full Bridge Phase Shift ITTF ITTF ITTF ITTF ITTF ITTF Synchronous Rectification CoolSET
Voltage Class
600V 600V 600V 600V 600V 600V 650V 600V 650V 650V 600V 650V 650V 600V 650V 600V 500V 600V 600V 500V 600V 40-200V 650-800V
Technology
CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CFD2 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CFD2 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CFD2 CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 CoolMOS C6/E6 CoolMOS CP CoolMOS C6/E6 OptiMOS CoolSET
Selection
ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation ease of use Efficiency Recommendation Recommendation Recommendation
AC / DC
DC / DC
Rectification Aux
15
Applications
E-Mobility
Best Solutions for Battery Charger
To recharge the battery of an electric car, a charger is needed. In cars with on-board chargers the batteries can be recharged by plugging them into a standard power outlet at home. Battery charging via the power grid requires a flexible switching structure in order to handle the different voltage levels and available power existing in different countries. Because charging time is a very important factor for most motorists, on-board chargers have to be very efficient so that they are as small and light as possible. A long-term trend is towards bi-directional charger functions for not only drawing current from the grid but feeding excess energy back into it. Infineons comprehensive portfolio of semiconductors (sensors, microcontrollers, power semiconductors, power modules, etc.) lends itself perfectly to compact charging units. The products also function at high switching frequencies for use in small and light charger designs. Our products in this sector include MOSFETs: CoolMOS and the flexible Easy 1B/2B power modules for overnight low-amp charging, HybridPACK1 for fast charging with high amps and high-performance 16- and 32-bit microcontroller solutions. AC/DC Battery Charger
IPx65RxxxCFDA 1ED020I12FA L1 RFI Filter PFC DC/DC Converter IPx65RxxxCFDA UCC27322-DGN IDP 23E60 XC27xx L2 Power (grid) RFI Filter PFC DC/DC Converter Battery Management
L1 L2 L3 Isolation
Control + Display
Topology
Bridgeless converter Totem Pole ZVS Phase Shifted Full Bridge LLC Converter -
Voltage
650V 650V 650V 650V
Technology
CoolMOS CFDA CoolMOS CFDA CoolMOS CFDA CoolMOS CFDA Microcontroller XC27xx
I/V Measurement
Selection
Recommendation Recommendation Recommendation Recommendation Recommendation
DC / DC Control Board
16
The Battery Management System (BMS) controls battery charge and discharge. An intelligent battery management system is necessary to lengthen battery life, which reduces the vehicle cost over its entire lifetime. The system constantly controls the functionality and state of charge of the battery cells. As they age, the storage capacity of the individual battery cells may lessen at a different speed for each cell. The challenge is to optimize cell utilization. Circuits to test the cells, and active balancing of the cells during the charging and discharging process enable the battery life and cruising range to be effectively lengthened. Our solution for active cell balancing increases usable battery capacity by over 10 percent. The companys microcontrollers and sensors monitor functionality, charge and depth of discharge. These include the 8-bit XC886CM microcontroller family, the 16/32-bit XC22xx microcontroller family, the OptiMOS low-voltage MOSFETs, the TLE 6250/51 CAN transceivers as well as the TLE 6389-2GV and TLE 42994GM controllers. Battery Management
Private CAN
Battery Master
16/32-bit Microcontroller XC2267-96F66L TLE 6250G TLE 42994 Public CAN
Main Switch
TLE 4906K TLE 4998 IKP 20N60T 2x IKW 75N60T 150400V
Topology
high power high current
Voltage
600V 30V 40V 100V
Technology
IGBT Trenchstop OptiMOS OptiMOS OptiMOS
Selection
Recommendation Recommendation Recommendation Recommendation
17
Applications
Solar
Performance Products for Highest Inverter Efficiencies
In 2010 Solar Power experienced significant growth worldwide. At the end of 2008 the world`s cumulative installed photovoltaic capacity approached 16 GW, in 2009 it reached 23 GW. In 2010, almost 40 GW are installed globally and produce around 50 TWh of electricity every year. While the EU has dominated the world market, the fastest Solar Power growth is expected to continue in China and India, followed by South-East Asia, Latin America and the MENA countries.* Improving efficiency is the number one objective in the field of photovoltaics: Ways of converting solar energy into electricity more efficiently are required in order to optimize the technologys cost-effectiveness. Efficiency gains of as little as one percent can still yield enormous returns in this segment. Infineon provides a comprehensive portfolio of high-performance products including CoolMOS, IGBTs, Silicon Carbide, IGBT modules and driver ICs to help customers achieve their aims. These highperformance products boost the reliability and efficiency of inverters for photovoltaic applications. As the leader in high-efficiency technologies, we enable customers in realizing photovoltaic inverter efficiencies of up to 99%.
Example: Single phase solution, isolated Boost Isolation + Rectification DC/AC stage
D1
150..450V DC
S3
S5
S8..9 D2..5
230V AC
S1
S2
S4
S6..7
Devices
S1 D1 S2..S5 D2..D5 S6..S7 S8..S9
Function
Boost switch Boost diode PWM switches Rectification diodes High frequency output switches Polarity selection switches
18
2x Line Frequency Halfsine output tracking line Grid Line Frequency Bypass +
D1 S2..5
30V DC PV Array
S1
EMI Filter
PWM control
Devices
S1 D1 S2S5
Function
Primary side switch Rectifying diode Unfolding bridge
19
Applications
VIN
PFC
Industrial Welding
DC/AC
Topology
Full-Bridge Full-Bridge Two Transistor Forward Two Transistor Forward Boost Converter / switch Boost Converter / switch Boost Converter Half-Bridge Single Channel Half-Bridge Dual Channel
Voltage Class
600V 1200V 600V 1200V 600V 1200V 650V 600V/1200V 600V/1200V
Technology
HighSpeed 3 HighSpeed 3 HighSpeed 3 HighSpeed 3 HighSpeed 3 HighSpeed 3 CoolSET F3 EiceDRIVER (1ED) EiceDRIVER (ED)
Selection
Recommendation Recommendation Recommendation Recommendation Reference Reference Recommendation Efficiency Recommendation
20
Induction Heating
Highest Performance, Efficiency and Reliability IGBTs for Induction Heating Cooktops
Being the market leader in IGBTs, we offer a comprehensive, high performance portfolio of 600V, 1100V, 1200V, 1350V, 1600V discrete IGBTs for resonant-switching applications like induction heating cooktops. The portfolio has been developed to provide benchmark performance in terms of switching and conduction losses, which ensures best-in-class efficiency and fast time to market. New Edition IHW40N60RF and 600V HighSpeed 3 family have been added to address high speed switching topologies where switching losses have been optimized. These devices provide excellent performance over temperature and ensure up to 20% lower switching losses compared to competitor devices. The 1350V 3rd Generation induction heating specific IGBT has recently been added to the portfolio. The device has been designed to offer a higher voltage breakthrough headroom to offer customer higher reliability whilst not compromising device performance.
VAC
Cbus
Cres
2
Induction Heating
Topology
Series-Resonant Half-Bridge 20kHz Series-Resonant Half-Bridge 60kHz Quasi-Resonant Single Ended Quasi-Resonant Single Ended Quasi-Resonant Single Ended Quasi-Resonant Single Ended Flyback Flyback Boost Converter
Voltage Class
600V 600V 1100V 1200V 1350V 1600V 650V 800V 800V
Technology
RC-H RC-HF RC-H RC-H RC-H RC-H CoolSET QR CoolSET QR CoolSET F3
Selection
Recommendation Recommendation Recommendation Reference Reference Recommendation Efficiency Recommendation Reference
DC/AC
Aux
21
Applications
Aircon
Infineons Innovative Approach for Aircon Reference Board
We offer a wide portfolio of energy saving chips for the whole system chain of power electronic devices for air-conditioning systems. To enable engineers a fast entry in the usage of our devices an aircon reference board has been developed. Features 1 kW compressor inverter stage using 15 A RC-Drives IGBT in DPAK (TO-252) 200 W outdoor fan inverter stage using 4 A RC-Drives IGBT in DPAK (TO-252) 1.5 kW CCM-PFC using 20 A HighSpeed 3 IGBT 10 A SiC-Diode
HEATSINK
SiC Diode
XC878
ICE3PCS02G
10m shunt PFC
C h o k e
Relais
5V LDO
XE164
RC RC
RC RC RC
shunt motor 1
Aircon
PFC AC / DC
Topology
PFC CCM (low frequency) PFC CCM (high frequency) PFC CCM PFC CCM B6-VSI B6-VSI Boost Converter Driver for B6 Bridge
Voltage Class
600V 600V 600V 600V 600V 600V 650V 600V
Technology
TRENCHSTOP HighSpeed 3 CoolMOS C6 SiC Diode RC Drives TRENCHSTOP CoolSET F3 EiceDRIVER (6ED)
Selection
Recommendation Recommendation Reference Recommendation Recommendation Efficiency Reference Recommendation
22
OptiMOS
Leading-edge solutions for a better future
Infineons innovative products serve the market needs throughout the whole energy supply chain. OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). In all these areas, our customers face the challenge of growing power demand, higher efficiency and lower cost. At the same time, the available space is constantly shrinking, leading to higher power density requirements. The solution can be found in the low voltage Power MOSFET family, OptiMOS 20V up to 250V, which consistently sets the benchmark in key specifications for power system design, including leading onstate resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. Lower power losses enable system cost improvement by reducing the need for device paralleling and allowing smaller heatsinks. OptiMOS family also contributes to customers goals of providing more compact power supply designs. Available in innovative space saving packages like CanPAK, SuperSO8 or S3O8, these products reduce the volume consumption up to more than 90%. In addition, they improve switching noise and EMI for SMPS, as well as other industrial applications. OptiMOS products are suitable for a wide range of applications: VR-modules for server Synchronous rectification for AC/DC SMPS DC/DC converters Motor control 12V-110V system Solar micro inverter and Maximum Power Point Tracker (MPPT) LED lighting Notebook and desktop
80
40
25
Status 2010
30
40
60
75
80 Voltage [V]
100
120
150
200
250
24
Vin = 12V, Vout = 1.2V Lout = 210nH, Vdrive = 5V fswitch = 350kHz fswitch = 500kHz 0 20 40 60 80 100 120 140 160 180 Output Current [A]
Outstanding performance of the new OptiMOS 25V and 30V products is exemplified on a six-phase Server Vcore VRD. 93% peak efficiency and >90% full load efficiency is demonstrated with the new OptiMOS 25V products in SuperSO8 package. (HighSide: BSC050NE2LS; LowSide: BSC010NE2LS)
E ciency [%]
Clean waveforms for optimized EMI bahaviour make new OptiMOS 25V/30V products easy to use
17.5 15.0 12.5 Voltage across SyncFet [V] 10.5 7.5 5.0 2.5 0 -2.5 -5.0 0 100 200 300 400 500 600 700 800 Time [ns] 900 1000 Vin = 12V Vdrive = 5V Iout = 20A
With the new OptiMOS 25V/30V products short switching times (rise and fall times <5ns) go in hand with excellent EMI behaviour. An integrated damping network guarantees low over- and undershoot and minimizes ringing without sacrifycing efficiency
25
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
With the new OptiMOS products, we have the best solution to Save overall system costs by reducing the number of phases in multiphase converters Reduce power losses and increase Efficiency for all load conditions Save space with smallest packages like CanPAK or S308 Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in
Low Voltage
With the new OptiMOS 25V and 30V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.
Applications
Efficiency
94 92 E ciency [%] 90 88 86 84 82 50 100 150 200 250 300
BSB028N06NN3 G Competitor
120
10
15
20
25
30
35
More than 1% higher peak efficiency can be reached by using Infineon products in synchronous rectification of a 600W Server power supply with 12V output.
26
In applications like synchronous rectification in SMPS, motor drives and DC/DC converters, high power density and high efficiency are the major driving factors. Moving from TO-220 to SuperSO8 reduces the volume consumption drastically. With three times lower parasitics compared to TO-220, SuperSO8 offers highest efficiency and lowest design efforts due to reduced spikes.
27
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
Applications
SuperSO8 / S3O8 the intelligent way to highest efficiency and power density
OptiMOS 20V
RDS(on) @VGS=10V TO-251 / TO-251 SL [m] <2 2-4 4-10 30-40
BSO330N02K G RDS(ON)=32.0m
TO-252 DPAK
CanPAK M CanPAK S
TO-263 7 Pin
TO-220
TO-220 FullPAK
SuperSO8
S308
BSC019N02KS G RDS(ON)= 1.9m BSC026N02KS G RDS(ON)=2.6m BSC046N02KS G RDS(ON)=4.6m
OptiMOS 25V
RDS(on) @VGS=10V TO-251 / TO-251 SL [m] <1.0 TO-252 DPAK CanPAK M CanPAK S
BSB008NE2LS * RDS(ON)= 0.8m BSB012NE2LX RDS(ON)=1.2m BSB013NE2LXI RDS(ON)=1.3m
TO-263 7 Pin
TO-220
TO-220 FullPAK
SuperSO8
BSC009NE2LS RDS(ON)=0.9m BSC010NE2LS RDS(ON)=1.0m BSC010NE2LSI RDS(ON)=1.0m BSC014NE2LSI RDS(ON)=1.4m BSC018NE2LSI RDS(ON)=1.8m BSC018NE2LS RDS(ON)=1.8m BSC024NE2LS RDS(ON)=2.4m
S308
1-2
2-4
BSF030NE2LQ RDS(ON)=3.0m
4-6
28
CanPAK CanPAK M S
TO-263 D2PAK
TO-263 7 Pin
TO-220
S3O8 dual
(Power Stage 3x3)
Super SO8
S308
Bare Die
(RDS(on) typ.)
BSB012N03LX3 G RDS(ON)=1.2m
IPB009N03L G RDS(ON)=0.95m
IPC218N03L3
1-2
BSB017N03LX3 G RDS(ON)=1.7m
BSC016N03LS G BSZ019N03LS RDS(ON)=1.6m BSC0901NS RDS(on)=1.9m BSC0901NSI RDS(on)=2.0m BSF024N03LT3 G RDS(ON)=2.4m BSC020N03LS G BSZ0901NSI RDS(ON)=2.0m BSC0902NSI RDS(on)=2.8m RDS(ON)=2.5m RDS(on)=2.1m BSZ0902NSI RDS(on)=2.8m RDS(on)=2.6m RDS(on)=1.9m
IPC055N03L3
IPC042N03L3
BSC025N03LS G BSZ0902NS BSC0902NS RDS(on)=2.6m IPS031N03L G RDS(ON)=3.1m IPD031N03L G RDS(ON)=3.1m IPB034N03L G RDS(ON)=3.4m IPP034N03L G RDS(ON)=3.4m BSC030N03LS G BSZ035N03LS G RDS(ON)=3.0m RDS(ON)=3.4m BSC0904NSI RDS(on)=3.7m IPS040N03L G RDS(ON)=4.0m IPS050N03L G RDS(ON)=5.0m IPD040N03L G RDS(ON)=4.0m IPD050N03L G RDS(ON)=5.0m BSF050N03LQ3 G IPB042N03L G RDS(ON)=5.0m RDS(ON)=4.2m IPB055N03L G RDS(ON)=5.5m IPP042N03L G RDS(ON)=4.2m IPP055N03L G RDS(ON)=5.5m BSC042N03LS G BSZ050N03LS G IPC028N03L3 RDS(ON)=4.2m BSC0906NS RDS(on)=4.5m BSC050N03LS G RDS(ON)=5.0m RDS(ON)=5.7m BSC052N03LS RDS(on)=5.2m IPS060N03L G IPD060N03L G RDS(ON)=6.0m IPD075N03L G RDS(ON)=7.5m IPB065N03L G RDS(ON)=6.5m IPB080N03L G RDS(ON)=8.0m IPP065N03L G RDS(ON)=6.5m IPP080N03L G RDS(ON)=8.0m BSC0908NS RDS(on)=8.0m BSZ065N03LS RDS(on)=6.5m RDS(ON)=6.0m IPS075N03L G RDS(ON)=7.5m RDS(ON)=5.0m BSZ058N03LS G RDS(ON)=5.8m IPC022N03L3 RDS(ON)=3.5m RDS(on)=4.0m BSC034N03LS G BSZ0904NSI
2-4
4-6
6-8
29
Packages
Power ICs
IGBT
BSC057N03LS G
Silicon Carbide
High Voltage
Low Voltage
BSC014N03LS G
Applications
TO-252 DPAK
CanPAK CanPAK M S
TO-263 D2PAK
TO-263 7 Pin
TO-220
S3O8 dual
(Power Stage 3x3)
Super SO8
S308
Bare Die
(RDS(on) typ.)
IPD090N03L G RDS(ON)=9.0m
IPB096N03L G RDS(ON)=9.6m
IPP096N03L G RDS(ON)=9.6m
8-10
BSC090N03LS G BSZ0905NS *
IPS105N03L G RDS(ON)=10.5m
IPD105N03L G RDS(ON)=10.5m
IPB114N03L G RDS(ON)=11.4m
IPP114N03L G RDS(ON)=11.4m
10-15
IPS135N03L G RDS(ON)=13.5m IPD135N03L G RDS(ON)=13.5m IPB147N03L G RDS(ON)=14.7m IPP147N03L G RDS(ON)=14.7m
BSZ130N03LS G RDS(ON)=13.0m BSZ0920NS * RDS(on)=18.0m BSZ0907ND * RDS(on)=9.5/7.2m BSZ0908ND * RDS(on)=19.0/9.0m BSC072N03LD G RDS(ON)=7.2m BSC150N03LD G RDS(ON)=15.0m
30
TO-252 DPAK
S308
TO-263 D2PAK
TO-263 7 Pin
TO-220
TO-220 FullPAK
SuperSO8
BSC014N03MS G RDS(ON)=1.4m BSC016N03MS G RDS(ON)=1.6m
S08
BSC025N03MS G BSO040N03MS G RDS(ON)=2.5m RDS(ON)=4.0m BSC030N03MS G RDS(ON)=3.0m BSZ050N03MS G RDS(ON)=5.0m BSZ058N03MS G RDS(ON)=5.8m BSC042N03MS G BSO051N03MS G RDS(ON)=4.2m RDS(ON)=5.1m
2-6
6-10
BSZ088N03MS G RDS(ON)=8.8m
10-20
BSC100N03MS G BSO110N03MS G RDS(ON)=10.0m RDS(ON)=11.0m BSC120N03MS G BSO130N03MS G RDS(ON)=12.0m RDS(ON)=13.0m BSO220N03MS G RDS(ON)=22.0m BSO150N03MD G RDS(ON)=15.0m BSO220N03MD G RDS(ON)=22.0m
>20 2 x 15 2 x 22
31
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
BSC050N03MS G RDS(ON)=5.0m
Low Voltage
BSZ035N03MS G RDS(ON)=3.5m
Applications
TO-220
IPP015N04N G RDS(ON)=1.5m
TO-220 FullPAK
Super SO8
BSC016N04LS G RDS(ON)=1.6m BSC017N04NS G RDS(ON)=1.7m BSC018N04LS G RDS(ON)=1.8m BSC019N04NS G RDS(ON)=1.9m
S308
Bare Die
(RDS(on) typ.) IPC218N04N3 IPC171N04N
<2
2-3
IPD036N04L G RDS(ON)=3.6m IPD038N04N G RDS(ON)=3.8m
IPB022N04L G RDS(ON)=2.2m IPB023N04N G RDS(ON)=2.3m IPB039N04L G RDS(ON)=3.9m IPD038N04N G RDS(ON)=3.8m IPB052N04N G RDS(ON)=5.2m
IPB020N04N G RDS(ON)=2.0m
IPP023N04N G RDS(ON)=2.3m
3-4
IPP039N04L G RDS(ON)=3.9m
BSC035N04LS G RDS(ON)=3.5m
BSZ040N04LS G RDS(ON)=4.0m
BSZ042N04NS G RDS(ON)=4.2m
4-7
IPB075N04L G RDS(ON)=7.5m IPB093N04L G RDS(ON)=9.3m BSC093N04LS G RDS(ON)=9.3m BSZ097N04LS G RDS(ON)=9.7m BSZ105N04NS G RDS(ON)=10.5m BSZ165N04NS G RDS(ON)=16.5m
13-17
32
TO-252 DPAK
CanPAK CanPAK M S
BSB028N06NN3 G RDS(ON)=2.8m
TO-262
IPI024N06N3 G RDS(ON)=2.4m
TO-263 D2PAK
IPB019N06L3 G RDS(ON)=1.9m RDS(ON)=2.1m RDS(ON)=2.9m
TO-263 7 Pin
RDS(ON)=1.6m RDS(ON)=1.7m RDS(ON)=2.3m
TO-220
TO-220 FullPAK
Super SO8
S308
Bare Die
(RDS(on) typ.)
IPC218N06L3
<3
IPB021N06N3 G IPB017N06N3 G
IPC218N06N3
IPB034N06N3 G IPP032N06N3 G IPA032N06N3 G BSC031N06NS3 G RDS(ON)=3.4m RDS(ON)=3.2m IPP037N06L3 G RDS(ON)=3.7m IPP040N06N3 G RDS(ON)=4.0m RDS(ON)=3.2m RDS(ON)=3.1m
3-5
IPB054N06N3 G RDS(ON)=5.4m
IPA057N06N3 G RDS(ON)=5.7m BSC067N06LS3 G BSZ067N06LS3 G RDS(ON)=6.7m RDS(ON)=9.3m RDS(ON)=7.6m RDS(ON)=10.0m RDS(ON)=11.0m RDS(ON)=6.7m RDS(ON)=7.6m RDS(ON)=10.0m RDS(ON)=11.0m
5-7
RDS(ON)=5.3m
IPD079N06L3 G
BSF077N06NT3 G RDS(ON)=7.7m
IPD088N06N3 G RDS(ON)=8.8m IPD220N06L3 G RDS(ON)=22.0m IPD250N06N3 G RDS(ON)=25.0m IPD350N06L G RDS(ON)=35.0m IPD400N06N G RDS(ON)=40.0m RDS(ON = 64.0m IPD800N06L G RDS(ON)=80.0m IPD800N06N G RDS(ON) = 80.0m
BSC100N06LS3 G BSZ100N06LS3 G
BSC110N06NS3 G BSZ110N06NS3 G
11-30
30-50
50-80
33
Packages
Power ICs
IGBT
IPD640N06L G
Silicon Carbide
7-10
RDS(ON)=7.9m
High Voltage
Low Voltage
IPB029N06N3 G IPB023N06N3 G
Applications
TO-263 D2PAK
IPB031NE7N3 G RDS(ON)=3.1m IPB020NE7N3 G RDS(ON)=2m IPB049NE7N3 G RDS(ON)=4.9m
TO-263 7 Pin
TO-220
IPP023NE7N3 G RDS(ON)=2.3m IPP034NE7N3 G RDS(ON)=3.4m IPP052NE7N3 G RDS(ON)=5.2m IPP062NE7N3 G RDS(ON)=6.2m
TO-220 FullPAK
Super SO8
S308
Bare Die
(RDS(on) typ.) IPC302NE7N3
4-6 6-12
BSC042NE7NS3 G RDS(ON)=4.2m
34
TO-252 DPAK
CanPAK M
TO-262
TO-263 D2PAK
TO-263 7 Pin
IPB019N08N3 G RDS(ON)=1.9m
TO-220
TO-220 FullPAK
Super SO8
S308
Bare Die
(RDS(on) typ.)
IPC302N08N3
IPI028N08N3 G RDS(ON)=2.8m
3-4
IPD053N08N3 G RDS(ON)=5.3m RDS(ON)=4.4m
4-6
IPP070N08N3 G RDS(ON)=7.0m IPP100N08N3 G RDS(ON)=9.7m IPP139N08N3 G RDS(ON)=13.9m IPA100N08N3 G RDS(ON)=10.0m BSC123N08NS3 G BSZ123N08NS3 G RDS(ON)=12.3m RDS(ON)=34.0m RDS(ON)=12.3m RDS(ON)=34.0m
BSC340N08NS3 G BSZ340N08NS3 G
35
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
IPI037N08N3 G
IPA037N08N3 G
Applications
OptiMOS 80V
TO-263 D2PAK
TO-263 7 Pin
TO-220
TO-220 FullPAK
Super SO8
S308
Bare Die
(RDS(on) typ.)
IPC302N10N3 IPC26N10NR
IPI030N10N3 G IPB027N10N3 G IPB025N10N3 G IPP030N10N3 G IPA030N10N3 G RDS(ON)=3.0m RDS(ON)=2.7m RDS(ON)=2.5m RDS(ON)=3.0m RDS(ON)=3.0m IPB039N10N3 G RDS(ON)=3.9m IPP045N10N3 G IPA045N10N3 G RDS(ON)=4.5m IPP05CN10L G RDS(ON)=5.1m IPD068N10N3 G IPI072N10N3 G RDS(ON)=7.2m IPP072N10N3 G RDS(ON)=7.2m IPP06CN10L G RDS(ON)=6.2m IPS118N10N G IPD082N10N3 G RDS(ON)=11.8m RDS(ON)=8.2m IPI086N10N3 G IPB083N10N3 G RDS(ON)=8.6m RDS(ON)=8.3m RDS(ON)=8.6m IPP08CN10L G RDS(ON)=8.0m IPP12CN10L G RDS(ON)=12.0m IPD122N10N3 G RDS(ON)=12.2m BSF134N10NJ3 G IPI126N10N3 G IPB123N10N3 G RDS(ON)=13.4m RDS(ON)=12.6m RDS(ON)=12.3m RDS(ON)=8.5m BSC060N10NS3 G RDS(ON)=6.0m BSC070N10NS3 G RDS(ON)=7.0m RDS(ON)=10.9m BSC082N10LS G RDS(ON)=8.2m BSC105N10LSF G RDS(ON)=10.5m RDS(ON)=6.8m RDS(ON)=4.5m
4-6
6-8
8-12
IPS12CN10L G RDS(ON)=11.8m
IPP126N10N3 G IPA126N10N3 G BSC160N10NS3 G BSZ160N10NS3 G RDS(ON)=12.6m RDS(ON)=12.6m RDS(ON)=16.0m RDS(ON)=16.0m IPP16CN10L G RDS(ON)=15.7m BSC123N10LS G RDS(ON)=12.3m BSC159N10LSF G RDS(ON)=15.9m
12-18
18-20
IPP180N10N3 G IPA180N10N3 G RDS(ON)=18.0m RDS(ON)=18.0m BSC205N10LS G RDS(ON)=20.5m BSC265N10LSF G RDS(ON)=26.5m BSC440N10NS3 G BSZ440N10NS3 G RDS(ON)=44.0m RDS(ON)=44.0m BSC750N10ND G RDS(ON)=75.0m
20-40
40-80
IPD78CN10N G RDS(ON)=78.0m
36
TO-252 DPAK
TO-262
TO-263 D2PAK
IPB038N12N3 G RDS(ON)=3.8m
TO-263 7 Pin
IPB036N12N3 G RDS(ON)=3.6m
TO-220
Super SO8
S308
Bare Die
(RDS(on) typ.) IPC302N12N3 IPC26N12N
IPI076N12N3 G RDS(ON)=7.6m
BSC077N12NS3 G RDS(ON)=7.7m
IPI147N12N3 G RDS(ON)=14.7m
IPB144N12N3 G RDS(ON)=14.4m
IPP147N12N3 G RDS(ON)=14.7m
BSC190N12NS3 G RDS(ON)=19.0m
OptiMOS 150V
Silicon Carbide Packages 37 Power ICs
All OptiMOS products are halogen free.
TO-252 DPAK
CanPAK M
TO-262
TO-263 D2PAK
TO-263 7 Pin
IPB065N15N3 G RDS(ON)=6.5m
TO-220
TO-220 FullPAK
Super SO8
S308
Bare Die
(RDS(on) typ.) IPC302N15N3
7-12
IPI075N15N3 G IPB072N15N3 G RDS(ON)=7.5m RDS(ON)=7.2m IPI111N15N3 G IPB108N15N3 G RDS(ON)=11.1m RDS(ON)=10.8m IPD200N15N3 G BSB165N15NZ3 G IPI200N15N3 G IPB200N15N3 G RDS(ON)=20.0m RDS(ON)=16.5m RDS(ON)=20.0m RDS(ON)=20.0m BSB280N15NZ3 G RDS(ON)=28.0m
IPP075N15N3 G IPA075N15N3 G RDS(ON)=7.5m RDS(ON)=6.5m IPP111N15N3 G IPA105N15N3 G RDS(ON)=11.1m RDS(ON)=10.5m IPP200N15N3 G RDS(ON)=20.0m BSC190N15NS3 G RDS(ON)=19.0m
16-30
30-60
IPD530N15N3 G RDS(ON)=53.0m
BSC360N15NS3 G RDS(ON)=36.0m IPI530N15N3 G IPB530N15N3 G RDS(ON)=53.0m RDS(ON)=53.0m IPP530N15N3 G RDS(ON)=53.0m BSC520N15NS3 G BSZ520N15NS3 G RDS(ON)=52.0m RDS(ON)=52.0m BSZ900N15NS3 G RDS(ON)=90.0m
80-90
IGBT
High Voltage
Low Voltage
4-5
Applications
OptiMOS 120V
OptiMOS 200V
RDS(on) @VGS=10V [m] TO-252 DPAK TO-262 TO-263 D2PAK TO-263 7 Pin TO-220 TO-220 FullPAK Super SO8 S308 Bare Die
(RDS(on) typ.) IPC302N20N3 IPI110N20N3 G RDS(ON)=11.0m IPB107N20N3 G RDS(ON)=10.7m IPB107N20NA ** RDS(ON)=10.7m IPP110N20N3 G RDS(ON)=11.0m IPP110N20NA ** RDS(ON)=11.0m IPP320N20N3 G RDS(ON)=32.0m BSC320N20NS3 G RDS(ON)=32.0m BSC900N20NS3 G BSZ900N20NS3 G RDS(ON)=90.0m RDS(ON)=90.0m BSC12DN20NS3 G BSZ12DN20NS3 G RDS(ON)=125.0m RDS(ON)=125.0m BSC22DN20NS3 G BSZ22DN20NS3 G RDS(ON)=225.0m RDS(ON)=225.0m
10-20
IPD320N20N3 G RDS(ON)=32.0m
IPI320N20N3 G RDS(ON)=32.0m
IPB320N20N3 G RDS(ON)=32.0m
OptiMOS 250V
RDS(on) @VGS=10V [m] 10-20 20-30 60-70 100-200 400-500
IPD600N25N3 G RDS(ON)=60.0m IPI200N25N3 G RDS(ON)=20.0m IPI600N25N3 G RDS(ON)=60.0m IPB200N25N3 G RDS(ON)=20.0m IPB600N25N3 G RDS(ON)=60.0m IPP200N25N3 G RDS(ON)=20.0m IPP600N25N3 G RDS(ON)=60.0m BSC600N25NS3 G RDS(ON)=60.0m BSC16DN25NS3 G BSZ16DN25NS3 G RDS(ON)=165.0m RDS(ON)=165.0m BSZ42DN25NS3 G RDS(ON)=425.0m
TO-252 DPAK
TO-262
TO-263 D2PAK
TO-263 7 Pin
TO-220
TO-220 FullPAK
Super SO8
S308
Bare Die
(RDS(on) typ.) IPC302N25N3 IPC302N25N3A **
* in developement ** part qualified for Automotive All OptiMOS products are halogen free.
38
Voltage
SOT-223
BSP317P
TSOP6
SOT-89
SC-59
SOT-23
SOT-323
SOT-363
Bare Die
(RDS(on) typ.)
- 250
4.0, -0.43A, LL BSP92P 12.0, -0.26A, LL BSP321P 900.0m, -0.98A, NL BSS192P 12.0, -0.19A, LL BSR92P 11.0, -0.14A, LL
- 100
BSP322P 800.0m, -1.0A, LL BSP316P 1.8, -0.68A, LL BSP613P 130.0m, 2.9A, NL BSP170P BSR316P 1.8, -0.36A, LL BSS83P 2.0, -0.33A, LL BSS84P 8.0, -0.17A, LL BSS84PW SISC6,24P06
- 60 P-Channel MOSFETs
BSP171P 300.0m, -1.9A, LL BSP315P 800.0m, -1.17A, LL BSL303SPE * ~30.0m, ~-6.6A, LL BSP304PE * ~40.0m, ~-5.5A, LL BSP306PE * ~60.0m, ~-4.5A, LL BSL305SPE * ~50.0m, ~-5.3A, LL BSL307SP 43.0m, -5.5A, LL BSL308PE 80.0m, -2.1A, LL, dual, ESD BSL314PE 140.0m, -1.5A, LL, ESD, dual BSL315P 150.0m, -1.5A, LL, dual BSL207SP 41.0m, -6A, SLL BSL211SP BSR315P 800.0m, -0.62A, LL BSR303PE * ~30.0m, ~-3.3A, LL BSR305PE * ~50.0m, ~-2.7A, LL BSS308PE 80.0m, -2.1A, LL, ESD BSS314PE 140.0m, -1.5A, LL, ESD BSS315P 150.0m, -1.5A, LL BSD314SPE 140.0m, -1.5A, LL, ESD BSS356PWE * BSD356PE * ~560.0m, ~0.73A, LL ~560.0m, ~0.73A, LL BSS209PW 550.0m, -0.58A, SLL BSS223PW 1.2, -0.39A, SLL BSS215P 150.0m, -1.5A, SLL BSV236SP 175.0m, -1.5A, SLL BSD223P 1.2, -0.39A, SLL, dual SISC01,18P02S SISC1.36P02Q
- 30
- 20
39
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
300.0m, -1.9A, NL
8.0, -0.15, LL
Low Voltage
Applications
Small Signal
Small Signal
Voltage -20 / 20 SOT-223 TSOP6
BSL215C
SOT-89
SC-59
SOT-23
SOT-323
SOT-363
BSD235C N: 0.35, 0.95A, SLL P: 1.2, -0.53A, SLL
Complementary
N: 140.0m, 1.5A, SLL P: 150.0m, -1.5A, SLL BSL316C N: 160.0m, 1.4A, LL P: 150.0m, -1.5A, LL BSL308C N:57.0m, A, LL P:80.0m, A, LL,
-30 / 30
40
Voltage
SOT-223
TSOP6
BSL802SN 22.0m, 7.5A, ULL BSL202SN 22.0m, 7.5A, SLL BSL806N 57.0m, 2.3A, ULL,dual BSL205N 50.0m, 2.5A, SLL, dual BSL207N 70.0m, 2.1A, SLL, dual BSL214N
SOT-89
SC-59
BSR802N 23.0m, 3.7A, ULL BSR202N 21.0m, 3.8A, SLL
SOT-23
SOT-323
SOT-363
Bare Die
(RDS(on) typ.)
57.0m, 2.3A, ULL BSS205N 50.0m, 2.5A, SLL BSS816NW 160.0m, 1.4A, ULL BSS214N 140.0m, 1.5A, SLL BSR302N 23.0m, 3.7A, LL BSS306N 57.0m, 2.3A, LL BSS316N 160.0m, 1.4A, LL BSS670S2L 650.0m, 0.54A, LL BSS214NW 140.0m, 1.5A, SLL
160.0m, 1.4A, ULL BSD214SN 140.0m, 1.5A, SLL BSD840N 400.0m, 0.88A, ULL, dual BSD235N 350.0m, 0.95A, SLL, dual
20
N-Channel MOSFETs
140.0m, 1.5A, SLL, dual BSL302SN 25.0m, 7.1A, LL BSL306N 57.0m, 2.3A, LL, dual
30
55
BSP318S 90.0m, 2.6A, LL BSP320S 120.0m, 2.9A, NL BSL606N * 60.0m, 4.5A, LL BSS606N 60.0m, 2.3A, LL BSR606N * 60.0m, 2.3A, LL
BSS138N 3.5, 0.23A, LL BSS7728N 5.0, 0.2A, LL SN7002N 5.0, 0.2A, LL 2N7002 3.0, 0.3A, LL BSS159N 8.0, 0.13A, depl.
SISC0,3N06D SISC02,3N06E1,0
60
75
BSP716 * ~160.0m, A, LL
41
Packages
Power ICs
IGBT
Silicon Carbide
SISC2,62SN06L
High Voltage
Low Voltage
BSS806N
BSD816SN
Applications
Small Signal
Small Signal
Voltage SOT-223
BSP373 300.0m, 1.7A, NL BSP372 310.0m, 1.7A, LL
TSOP6
SOT-89
SC-59
SOT-23
BSS169 12.0, 0.09A, depl. BSS119 6.0, 0.17A, LL VGSth 1.8V to 2.3V
SOT-323
Bare Die
(RDS(on) typ.) SISC0,50N10D
100
BSP296 700.0m, 1.1A, LL BSP123 6.0, 0.37A, LL BSP297 BSS123 6.0, 0.17A, LL VGSth 0.8V to 1.8V SISC2,9N20D 1.8, 0.66A, LL BSP149 3.5,0.14 A, depl. BSP88 6.0, 0.35A, 2.8V rated BSP89 6.0, 0.35A, LL BSP129 6.0, 0.05A, depl. BSS87 6.0, 0.26A, LL BSS131 14.0, 0.1A, LL SISC0,97N24D
240
250
BSP298
BSS139 30.0, 0.03A, depl. 3.0, 0.5A, NL BSP324 25.0, 0.17A, LL BSP299 4.0, 0.4A, NL BSP125 BSS225 45.0, 0.09A, LL BSS127 500.0, 0.023A, LL BSS126 700.0, 0.007A, depl.
SISC0,97N25E1,4 SISC0,64N25D
SISC1,40N60D SISC0,52N60E
NL = Normal Level LL = Logic Level SLL = Super Logic Level ULL = Ultra Logic Level
42
RDS(on) @ VGS=10V [m] 7 21 - 20V 30 45 67 3 4,2 5-7 ~8 - 30V 12 13 18 20 21 1,2 23 75 - 60V 130 250 300 210 - 100V 240 850 1
TO-220
TO-252 (DPAK)
IPD042P03L3 G IPD068P03L3 G
TO-263 (D2PAK)
SO8
SuperSO8
S3O8
CanPAK
BSO201SP BSO203SP BSO203P (dual) BSO204P (dual) BSO207P (dual) BSO211P (dual) BSC030P03NS3 G BSB027P03LX3 G * BSB028P03NS3 G * BSB029P03NX3 G *
IPD042P03L3 G SPD50P03L G ** IPD068P03L3 G BSO053P03NS3E G * BSC060P03NS3E G BSO080P03NS3 G BSO080P03NS3E G BSO080P03S BSO301SP BSC080P03LS G BSC084P03NS3 G BSC084P03NS3E G BSZ086P03NS3 G BSZ086P03NS3E G
SPP80P06P SPD30P06P G SPP18P06P SPD18P06P G SPD09P06PL G SPP08P06P SPP15P10PL G SPP15P10P G SPD08P06P G SPD15P10PL G SPD15P10P G SPD04P10PL G SPD04P10P G
SPB80P06 G
SPB18P06P G
BSO613SPV G
SPB08P06P G
43
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
Applications
P-Channel MOSFETs
Naming System
OptiMOSTM
BSC 016 N 03 L S F G
Package Type BSC = SuperSO8 BSO = SO-8 BSZ = S3O8 IPB = D2PAK IPC = Chip Product IPD = DPAK IPI = I2PAK IPP = TO-220 IPS = IPAK Short Leads RON [m ] Multiplied by 10, if last digit is not defined, substitution by C, e.g. 07C = 7m class. For chip products chip area in mm2 multiplied by 10 N = N-Channel P = P-Channel C = Complementary
Green Product Fast Switching S = Single Chip D = Dual Chip only valid for SO-8, SuperSO8, S3O8 N = Normal Level M = Logic Level 5V optimized L = Logic Level K = Super Logic Level J = Super Logic Level 1.8V rated Breakdown Voltage divided by 10 E = Extended, +5V, e.g. E2 = 25V
44
Naming System
New OptiMOSTM
BSC
Package Type BSB = CanPAK (M Can) BSC = SuperSO8 BSF = CanPAK (S Can) BSO = SO-8 BSZ = S3O8 IPA = FullPAK IPB = D2PAK IPC = Chip Product IPD = DPAK IPI = I2PAK IPP = TO-220 IPS = IPAK Short Leads RDS(ON) [m ] Multiplied by 10, if last digit is not defined, substitution by C, e.g. 07C = 7m class. For chip products chip area in mm2 multiplied by 10 N = N-Channel P = P-Channel C = Complementary Breakdown Voltage divided by 10 E = Extended, +5V, e.g. E2 = 25V
014
03
G
Green Product Features F = fast switching R = integrated gate resistor E = ESD protection C = clean switching e.g. IPD04xP03LE G Technology Generation 3 = OptiMOS3 Package Options SO-8 / SuperSO8 / S3O8 S = Single Chip only valid for SO-8, SuperSO8, S3O8 D = Dual Chip only valid for SO-8, SuperSO8, S3O8 CanPAK Q = SQ or MQ footprint X = SX or MX footprint T = ST or MT footprint P = MP footprint DPAK X = xtra drain lead
Level N = Normal Level M = Logic Level 5V opt. L = Logic Level K = Super Logic Level J = Ultra Logic Level
(NL) 10.0 (LL) 4.5 (ELL) 4.5 (SLL) 2.5 (ULL) 1.8
45
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
Applications
OptiMOSTM 30V
BSC 0901 N S I
Package Type Consecutively Number without any correlation to product specication Channels N = N-Channel P = P-Channel Integrated Diode D = Dual S = Single
Small Signal
BSX J1 Y J2 Z
X indicates the Package D = SOT-363 P = SOT-223 R = SC59 S = SOT-89, SOT-23, SOT-323 L = TSOP-6 3 digits product identier meaning dependent on product generation Only present in following case S = Single (only for packages which are also used for multichip products)
46
CoolMOS
The revolutionary CoolMOS power family sets new standards in the field of Energy Efficiency. As technology leader in high voltage MOSFETs, CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. Especially the latest, state-of-the-art generation of high voltage power MOSFETs made it possible that AC/DC power supplies are more efficient, more compact, lighter and cooler than ever before. This success was achieved by offering the lowest on-state resistance per package outline, the fastest switching speed and the lowest gate driver requirements of high voltage MOSFETs commercially available. Features Offers a significant reduction of conduction and switching losses Enables high power density and efficiency for superior power conversion systems Best-in-class price/performance ratio Benefits Easy control of switching behavior Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness More efficient, more compact, lighter and cooler
CoolMOSTM
CoolMOS technology
Source Gate n+
p+
On state: Reduction of resistance of epitaxial layer by high doped n-columns Higher doping level in n-type drift region results in lower RDS(on)
nepi
Blocking state: Compensation of additional charge by adjacent p-columns Half of active chip area is covered by p-columns During blocking state the p-column compensates the charge of the adjacent n-column resulting in high breakdown voltage at an area specific on-resistance below the silicon limit
Standard MOSFET
Source Gate n+
p+
nepi
Drain
n+
Main Applications
48
Since the development of the innovative CoolMOS technology we help applications to meet the standby power and Energy Efficiency regulations. CoolMOS is used for example in lighting applications where Energy Efficiency is more than ever a pre-condition as well as in solar inverters of market leaders. S5 series: first series of CoolMOS, market entry in 1998 slow switching, close to converter MOSFET, Vth 4.5 V, gfs low, Rg high design-in in high power SMPS only
CP series: fifth series of CoolMOS, market entry in 2005 ultra low RDS(on), ultra low gate charge, very fast switching Vth 3 V, gfs very high, internal Rg very low
900V C3 800V C3 650V C3 600V C3 500V C3 600V CFD 600V CP 500V CP 600V C6 / E6 650V C6 / E6 under development 650V CFD2 650V C7
productive
49
Packages
Power ICs
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
IGBT
Silicon Carbide
CFD series: fourth series of CoolMOS, market entry in 2004 fast body diode, Qrr 1/10th of C3 series, Vth 4 V, gfs high, Rg low specific for phase-shift ZVS and DC/AC power applications
CFD2 series: Seventh series of CoolMOS, Market entry 2011 First 650V Super Junction device, with fast body diode Is the successor of CFD, suitable for resonant topologies
High Voltage
C3 series: third series of CoolMOS, market entry in 2001 the "working horse" of the portfolio, fast switching, symmetrical rise/fall time @10 V Vgs, Vth 3 V, gfs high, Rg very low design-in into all CoolMOS segments
Low Voltage
Applications
CoolMOS - a history
DPAK (TO-252)
DPAK (TO-263)
TO-220FP (TO-220)
TO-220 (TO-220)
IPAK (TO-262)
TO-247 (TO-247)
IPD65R1K4CFD IPD65R950CFD IPD65R660CFD IPD65R420CFD IPB65R660CFD IPB65R420CFD IPB65R310CFD IPB65R190CFD IPB65R150CFD IPB65R110CFD IPA65R660CFD IPA65R420CFD IPA65R310CFD IPA65R190CFD IPA65R150CFD IPA65R110CFD IPP65R660CFD IPP65R420CFD IPP65R310CFD IPP65R190CFD IPP65R150CFD IPP65R110CFD IPI65R660CFD IPI65R420CFD IPI65R310CFD IPI65R190CFD IPI65R150CFD IPI65R110CFD IPW65R660CFD IPW65R420CFD IPW65R310CFD IPW65R190CFD IPW65R150CFD IPW65R110CFD IPW65R080CFD IPW65R041CFD
* in development
50
Applications Telecom Server Battery Charging Solar HID lamp ballast LED lighting
Topologies ZVS phase shifted full bridge LLC topologies AC / DC bridge 3-level inverter
CFD vs. CFD2 efficiency comparison in a 12 V Server SMPS used Topologie ZVS FB @ 100 kHz
Silicon Carbide
IPA65R420CFD SPA11N60CFD 0 100 200 300 400 500 600 700
93 92 91 90
47N60CFD 65R080CFD
E ciency [%]
89 88 87 86 85
IGBT 51 Packages Power ICs
0.5
84
Pout [W]
High Voltage
Features First 650V technology with integrated fast body diode on the market Limited voltage overshoot during hard commutation Significant Qg reduction compared to C3 based CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design in Lower price compared to 600V CFD technology
Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS quality
Low Voltage
Applications
CoolMOS C3 500V
ID RDS(on) Qg [A] [m] [nC]
1.8 3.2 4.5 7.6 11.6 16 21 32 52 3000 9 1400 15 950 22 600 32 380 49 280 66 190 95 110 170 70 290
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
SPD02N50C3 SPD03N50C3 SPD04N50C3 SPD08N50C3 SPI08N50C3 SPI12N50C3 SPI16N50C3 SPI21N50C3 SPB12N50C3 SPB16N50C3 SPB21N50C3 SPB04N50C3 SPP04N50C3 SPP08N50C3 SPP12N50C3 SPP16N50C3 SPP21N50C3 SPA04N50C3 SPA08N50C3 SPA12N50C3 SPA16N50C3 SPA21N50C3 SPW12N50C3 SPW16N50C3 SPW21N50C3 SPW32N50C3 SPW52N50C3
CoolMOS C3 600V
ID RDS(on) Qg [A] [m] [nC]
0.8 1.8 3.2 4.5 6.2 7.3 11 15 20.7 24.3 34.6 47 6000 3000 1400 950 750 600 380 280 190 160 100 70 3.9 9.5 13 19 24 21 45 63 87 104.9 150 252
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
SPD01N60C3 SPD02N60C3 SPD03N60C3 SPD04N60C3 SPD06N60C3 SPD07N60C3 SPI07N60C3 SPI11N60C3 SPI15N60C3 SPI20N60C3 SPB20N60C3 SPB07N60C3 SPB11N60C3 SPB02N60C3 SPB03N60C3 SPB04N60C3 SPP02N60C3 SPP03N60C3 SPP04N60C3 SPP06N60C3 SPP07N60C3 SPP11N60C3 SPP15N60C3 SPP20N60C3 SPP24N60C3 SPA04N60C3 SPA06N60C3 SPA07N60C3 SPA11N60C3 SPA15N60C3 SPW11N60C3 SPW15N60C3 SPW20N60C3 SPW24N60C3 SPW35N60C3 SPW47N60C3
52
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
CoolMOS C3 800V
ID RDS(on) Qg [A] [m] [nC]
2 2700 9
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
CoolMOS C3 900V
ID RDS(on) Qg [A] [m] [nC]
5.1 1200 29
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
IPD90R1K2C3
53
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
SPA15N65C3
Applications
CoolMOS C3 650V
CoolMOS CP 500V
ID RDS(on) Qg [A] [m] [nC]
7.1 9 10 12 13 17 23 520 399 350 299 250 199 140 13 17 19 23 27 34 48
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
IPD50R520CP IPD50R399CP IPI50R399CP IPI50R350CP IPI50R299CP IPI50R250CP IPI50R199CP IPI50R140CP IPB50R299CP IPB50R250CP IPB50R199CP IPB50R140CP
IPA50R520CP IPA50R399CP IPA50R350CP IPA50R299CP IPA50R250CP IPA50R199CP IPA50R140CP IPW50R399CP IPW50R350CP IPW50R299CP IPW50R250CP IPW50R199CP IPW50R140CP
CoolMOS CP 600V
ID RDS(on) Qg [A] [m] [nC]
6.1 6.8 9 11 12 16 21 25 31 39 60 600 520 385 299 250 199 165 125 99 75 45 21 24 17 IPL60R385CP 22 IPL60R299CP 26 32 IPL60R199CP 39 53 60 86 150
ThinPAK 8x8
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
IPA60R600CP IPA60R520CP IPA60R385CP IPA60R299CP IPA60R250CP IPA60R199CP IPA60R165CP IPA60R125CP IPW60R299CP IPW60R250CP IPW60R199CP IPW60R165CP IPW60R125CP IPW60R099CP IPW60R075CP IPW60R045CP
54
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
IPD60R3K3C6 IPD60R2K0C6 IPD60R1K4C6 IPD60R950C6 IPD60R600C6 IPD60R520C6 IPD60R380C6 IPI60R380C6 IPI60R280C6 IPI60R190C6 IPB60R380C6 IPB60R280C6 IPB60R190C6 IPB60R160C6 IPB60R125C6 IPB60R099C6 IPB60R950C6 IPB60R600C6 IPP60R950C6 IPP60R600C6 IPP60R520C6 IPP60R380C6 IPP60R280C6 IPP60R190C6 IPP60R160C6 IPP60R125C6 IPP60R099C6 IPP60R074C6 IPW60R070C6 IPW60R041C6 IPA60R950C6 IPA60R600C6 IPA60R520C6 IPA60R380C6 IPA60R280C6 IPA60R190C6 IPA60R160C6 IPA60R125C6 IPA60R099C6 IPW60R280C6 IPW60R190C6 IPW60R160C6 IPW60R099C6 IPW60R125C6
CoolMOS E6 600V
ID RDS(on) Qg [A] [m] [nC]
5.7 7.3 8.1 9.2 10.6 13.8 20.2 750 17.2 600 20.5 520 23.5 450 28 380 32 280 43 190 63
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
55
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
Applications
CoolMOS C6 600V
CoolMOS C6 650V
ID RDS(on) Qg [A] [m] [nC]
7.3 600 23 39 45 87 tbd 255 tbd
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
IPD65R600C6 IPD65R380C6
IPA65R600C6 IPA65R380C6 IPA65R280C6 IPA65R190C6 IPA65R099C6 IPW65R280C6 IPW65R190C6 IPW65R099C6 IPW65R070C6 IPW65R037C6
CoolMOS E6 650V
ID RDS(on) Qg [A] [m] [nC]
7.3 600 23
ThinPAK 8x8
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
IPL65R600E6*
IPD65R600E6 IPD65R380E6
* in development
56
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
TO-251 IPAK
TO-252 DPAK
TO-262 I2PAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-247
IPD65R1K4CFD* IPD65R950CFD* IPD65R660CFD IPD65R420CFD IPI65R660CFD IPI65R420CFD IPI65R310CFD IPI65R190CFD IPI65R150CFD* IPI65R110CFD IPB65R660CFD IPB65R420CFD IPB65R310CFD IPB65R190CFD IPB65R150CFD* IPB65R110CFD IPP65R660CFD IPP65R420CFD IPP65R310CFD IPP65R190CFD IPP65R150CFD* IPP65R110CFD IPA65R660CFD IPA65R420CFD IPA65R310CFD IPA65R190CFD IPA65R150CFD* IPA65R110CFD IPW65R660CFD IPW65R420CFD IPW65R310CFD IPW65R190CFD IPW65R150CFD* IPW65R110CFD IPW65R080CFD IPW65R041CFD
57
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
Applications
Naming System
Power MOSFETs (naming system till 2005)
S P P 20 N 60 C 3
Company S = Formerly Siemens Device P = Power MOSFET Package Type A = TO-220 FullPAK B = TO-263 (D2PAK) D = TO-252 (DPAK) I = TO-262 (I2PAK) N = SOT-223 P = TO-220 U = TO-252 (IPAK) W = TO-247
Specications C3 = CoolMOSTMC3 S5 = CoolMOSTMS5 Breakdown Voltage Divided by 10 (60 x 10 = 600V) Technology N = N-Channel Transistors Continuous Drain Current (@ TC = 25C) [A]
60
099
Series Name in this case CoolMOSTMCP for PFC and PWM applications RDS(on) [m ] R = RDS(on)
58
Packages
Power ICs
IGBT
SiC power devices enable increased efficiency, reduced solution size, higher switching frequency and produce significant less electromagnetic interference (EMI) in a variety of target applications Applications Power factor correction Solar and UPS inverters Motor drives Output rectification
Benefits System efficiency improvements at light & medium load Enabling higher frequency designs and increased power density solutions Lower system costs due to reduced cooling requirements Broadest range of current ratings and lower costs/Amp. for cost-effective performance improvements
60
16,0 14,0 RthJC (K/W) 12,0 10,0 8,0 6,0 4,0 2,0 0,0 2 3 4 5 Current rating (A)
6
Silicon Carbide 61 Packages Power ICs IGBT
The graph shows the same junction-case thermal resistance for Infineon products at 2A and 3A, and slightly higher values for the other current ratings. This small difference is in general compensated on the final design assembly due to the need of an isolation foil for the standard TO-220 package. A clear advance on competition (only products up to 3A available) is possible thanks to Infineon patented diffusion soldering.
Low Voltage
Second Generation now available in TO-220 FullPAK High efficiency and thermal performance combine in a full isolated solution. The new FullPAK solution combines the high electrical performance standards of Infineon second generation SiC Schottky diodes and the advantages of a full isolated package, without significant impact on thermal behavior compared to standard TO-220 solutions. The patented diffusion soldering technique enables to consistently reduce the chip-to-leadframe thermal resistance and positions Infineon FullPAK products as best-in-class performance. Additionally, we offer the industrys broadest portfolio in this package with current ratings up to 6A.
Applications
Qc IF SM [nC] [A]
3.2 5 8 12 15 19 24 30 38 11.5 16 32 IDD04S60C 42 49 59 84 98 118
TO-252 DPAK
TO-263 D2PAK
TO-220 FullPAK
IDB06S60C IDB10S60C
62
IF [A]
3 4 5 6 8 9 10 12
Qc IF SM [nC] [A]
3.2 4.5 6 8 12 15 16 19 11.5 18 26 32 42 49 51 59
IDD03SG60C IDD04SG60C IDD05SG60C IDD06SG60C IDD08SG60C IDD09SG60C IDD10SG60C IDD12SG60C
TO-252 DPAK
TO-263 D2PAK
IDH03SG60C IDH04SG60C IDH05SG60C IDH06SG60C IDH08SG60C IDH09SG60C IDH10SG60C IDH12SG60C
TO-220 FullPAK
Qc IF SM [nC] [A]
7 18 27 36 54 14 29 39 58 78
TO-252 DPAK
TO-263 D2PAK
TO-220 FullPAK
TO-247-HC
IDY10S120 IDY15S120
63
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
Applications
Naming System
thinQ!TM 2G
I
Company I = Infineon Device D = Diode Package Type D = DPAK (TO-252) H = TO-220 (real 2 pin) B = TO-263 V = TO-220 FullPAK
12
60
C
Specifications C = Surge current stable Breakdown Voltage Divided by 10 (60 x 10 = 600V)
thinQ!TM 3G
I
Company I = Infineon Device D = Diode Package Type D = DPAK H = TO-220 real 2pin Continuous Drain Current (@ TC = 25C) [A]
03
60
C
Specifications C = Surge current stable Breakdown Voltage Divided by 10 (60 x 10 = 600V) G = low thermal resistance Technology S = SiC Diode
thinQ!TM 1200 V
I
Company I = Infineon Device D = Diode
02
120
Breakdown Voltage Divided by 10 (60 x 10 = 600V) G = Low thermal resistance Technology S = SiC Diode
64
Naming System
Packages
Power ICs
IGBT
IGBT
We are famous for IGBT technology leadership and offer a comprehensive portfolio for the general purpose inverter, solar inverter, UPS, Induction heating, Microwave Oven, Rice cooker, Automotive, Welding and SMPS segments. Benefits IGBT offer much higher current density than MOSFET power switches due to bipolar action Insulated gate allows bipolar performance with MOSFET gate drive performance High efficiency = smaller heat sink which leads to lower overall system cost
IGBTs
Low Frequency Applications (eg. drives, induction cooking) Medium Frequency Applications (eg. UPS) High Frequency Applications (eg. SMPS, lamp ballast)
MOSFETS
high
low
Bipolar Transistor
Frequency low < 12 kHz medium < 40 kHz high < 150 kHz ultra high ( > 150 kHz)
66
Infineon has a huge portfolio addressing the following two switching techniques: Soft switching/resonant The world famous IHW series IGBTs
Hard switching 600V RC-D IGBTs 600V RC-Drives Fast 600V TRENCHSTOP DuoPack IGBTs 600V HighSpeed 3
For IGBT usage, applications are divided into two switching techniques
High Voltage 67 Packages Power ICs IGBT Silicon Carbide
Discrete IGBT
Number 1 worldwide supplier 1 in every 4 Discrete IGBTs sold comes from Infineon
Features Low Vce(sat) due to thin wafer technology Low switching losses High efficiency (cooler packages) Huge portfolio (current, voltage and package types) Excellent EMI behaviour Technical support for customers Solid logistic support Highest quality standards Leaders in IGBT Innovation
Benefits Operating range up to 100kHZ High efficiency devices optimised for lowest switching and conduction losses Cooler devices = smaller heat sinks Excellent EMI behaviour meaning smaller EMI filters Comprehensive portfolio Design support available on request
Low Voltage
Applications
Frequency Range
2 20 kHz TRENCHSTOP 20 100 kHz HighSpeed 2 20 kHz TRENCHSTOP (Duopack)
Voltage Range
600V 1000V 1200V 600V 1200V 600V 1200V
Part Number
IGpccN60T IGpccN100T IGpccT120 IGpccN120 IGpccN60H3 IGpccN120H2 IGpccN120H3 IHpccN60T IHpccT60 IHpccT120
Application
Induction Heating Microwave Multifunction Printers Half Bridge Resonant (Current resonance 600V parts) Single Switch (Voltage resonance > 600V parts)
Welding Inverter Full Bridge Two Transitor Forward CCM-PFC Welding AirCon Washing machine
68
Soft
Diode Commutation
Hard
2 20 kHz TRENCHSTOP
RC-Drives (monolythic)
DuoPack (discrete)
High Voltage 69 Packages Power ICs IGBT Silicon Carbide
600V
600V
1200V
600V
1200V
IKpccN60R IKpccN60RF
Induction Heating Microwave Multifunction Printers Half Bridge Resonant (Current resonance 600V parts) Single Switch (Voltage resonance > 600V parts)
Solar Inverter Asymmetrical Bridge Symmetrical full bridge Three level type I or Three level type II converter Motor Control Three phase inverter Full bridge inverter UPS Bridge Uninterruptable Power Supply Three level type II converter Major Home Appliances Symmetrical full bridge
Low Voltage
Applications
Thermal behaviour - The inverter stages are driven with best in class current versus package size IGBTs, 15 A duo-packs in a DPAK (TO-252) package are used for driving a 1 kW compressor. Application tests show the case temperature staying below 110C with an ambient temperature of 65C. This provides more design freedom and a cost effective opportunity to replace IPMs in the inverter stage of the compressor and fan. High efficiency - the CCM PFC stage uses the latest generation HighSpeed 3 IGBT and SiC diode to achieve a PFC efficiency of > 97 %. SMD mounting and high current density high speed IGBT allow for improved PCB area optimisation.
Preview
Rapid Diode - Emitter controlled silicon diode family expansion targeting applications with switching speeds up to 50 kHz. Target application is >100W PFC.* Automotive Discrete IGBT portfolio qualified to AEC-Q101. Target application is EV-aircon, PTC heater, and inverter drive; for diesel/gasoline vehicles HID lighting and Piezo-injection.*
* in development
70
TO-251
TO-252 DPAK
TO-263 D2PAK
TO-220
TO-262
TO-220 FullPAK
TO-247
Single IGBT
IGB50N60T IKD03N60RF IKU04N60R IKU06N60R IKU10N60R IKU15N60R IKD04N60RF IKD04N60R IKD06N60R IKD10N60R IKD15N60R IKB06N60T IKB10N60T IKB15N60T IKB20N60T
IGP50N60T
DuoPack
TO-252 DPAK
TO-263 D2PAK
TO-220
TO-262
TO-220 FullPAK
TO-247
TRENCHSTOPTM 2
DuoPack
71
Packages
Power ICs
IGBT
IGW25T120
Silicon Carbide
High Voltage
Low Voltage
Applications
TO-252 DPAK
TO-263 D2PAK
TO-220
TO-262
600V
1100V
1350
1600V
IHW30N160R2 IHY30N160R2
TO-251
TO-252 DPAK
IGD01N120H2
TO-263 D2PAK
IGB01N120H2 IGB03N120H2 IKB01N120H2 IKB03N120H2
TO-220
TO-262
TO-220 FullPAK
TO-247
DuoPack
TO-251
TO-252 DPAK
TO-263 D2PAK
IGB20N60H3 IGB30N60H3
TO-220
TO-262
TO-220 FullPAK
TO-247
IGP20N60H3 IGP30N60H3 IGW40N60H3 IGW50N60H3 IGW60N60H3 IGW75N60H3 IGW100N60H3 IKW20N60H3 IKW30N60H3 IKW40N60H3 IKW50N60H3 IKW60N60H3 IKW75N60H3
IGBT
DuoPack
IKB20N60H3 IKB30N60H3
IKP20N60H3 IKP30N60H3
* in development
72
TO-251
TO-252 DPAK
TO-263 D2PAK
TO-220
TO-262
TO-220 FullPAK
TO-247
DuoPack
TO-252 DPAK
TO-263 D2PAK
TO-247
600V IDD03E60 IDD09E60 IDD15E60 IDB09E60 IDB15E60 IDB23E60 IDB30E60 IDB45E60 IDP15E60 IDP23E60 IDP30E60 IDP45E60 IDV30E60C IDD06E60 IDP06E60
650V
600V / 650V
IDV08E65D* IDV20E65D*
IDW75E60 IDW100E60 IDP04E120 IDP09E120 IDB18E120 IDB30E120 IDP18E120 IDP30E120 IDB12E120 IDP12E120
1200V
73
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
Applications
Naming System
Discretes IGBT and Emitter Controlled Diodes
I
Company I = Infineon S = Formerly Siemens Device K = IGBT + Diode (normal drives) H = optimised for soft switching applications (e.g. induction heating) G = Single IGBT D = Diode Package Type A = TO-220 FullPAK B = TO-263 (D2PAK) D = TO-252 (DPAK) P = TO-220 U = TO-251 (IPAK) W = TO-247 I = I2PAK Y = TO-280 (formerly TO-247 HC) V = real 2 pin TO-220 FP
40
120
Nominal Current (@ 100C) [A] Technology N = N-Channel T = TRENCHSTOPTM E = Emitter Controlled Diodes (for diode only) Nominal Voltage Divided by 10 (120 x 10 = 1200V) = Fast IGBT (~20kHz) HS = HighSpeed (600V) (~80kHz) H = HighSpeed (600V - 1200V up to 100kHz) T = TRENCHSTOPTM (IGBT3) R = Reverse Conducting RF = Reverse Conducting Fast A = Automotive Generation
74
Packages
Power ICs
IGBT
TDA486x
TDA4862
Power Factor Controller (PFC) IC for high-power factor and active harmonic filter IC for sinusoidal line-current consumption Power factor approaching 1 Controls boost converter as an active harmonics filter Internal start-up with low current consumption Zero current detector for discontinuous operation mode High current totem pole gate driver Trimmed 1.4% internal reference Undervoltage lock out with hysteresis Very low start-up current consumption Pin compatible with world standard Output overvoltage protection Current sense input with internal low pass filter Totem pole output with active shutdown during UVLO Junction temperature range -40 to +150C Available in DIP-8 and SO-8 packages
TDA4863 / TDA4863-2
Power Factor Controller IC for high-power factor and low THD additional features to TDA4862 Reduced tolerance of signal levels Improved light load behavior Open loop protection Current sense input with leading edge blanking LEB Undervoltage protection
76
ICE2PCSxx
2nd Generation Continuous Conduction Mode (CCM) Power Factor Correction IC Features
2nd Generation Continuous Conduction Mode (CCM) Power Factor Correction IC Product Portfolio Product ICE2PCS01 ICE2PCS02 ICE2PCS03 ICE2PCS04 ICE2PCS05 ICE2PCS01G ICE2PCS02G ICE2PCS03G ICE2PCS04G ICE2PCS05G Frequency(SW) Current Drives Package 50kHz - 285kHz 2.0A 65kHz 2.0A 100kHz 2.0A DIP-8 133kHz 2.0A 20kHz - 250kHz 2.0A 50kHz - 250kHz 2.0A 65kHz 2.0A 100kHz 2.0A DSO-8 133kHz 2.0A 20kHz - 250kHz 2.0A
77
Packages
Power ICs
IGBT
Silicon Carbide
Fulfills Class D Requirements of IEC 61000-3-2 Lowest count of external components Adjustable and fixed sw frequencies Frequency range from 20kHz to 285kHZ Versions with brown-out protection available Wide input range supported Enanched Dynamic Response during Load Jumps Cycle by Cycle Peak Current Limiting Integrated protections OVP, OCP DIP8 and DSO8 Leadfree, RoHS compliant
High Voltage
Low Voltage
Applications
3rd Generation Continuous Conduction Mode (CCM) Power Factor Correction IC Features
Fulfills Class D Requirements of IEC 61000-3-2 Integrated digital voltage loop compensation Boost follower function Bulk voltage monitoring signals, brown-out Multi protections such as Double OVP Fast output dynamic response during load jump External synchronization Extra low peak current limitation threshold SO8 and SO14 Leadfree, RoHS compliant
Fixed Frequency PWM IC and CoolSET Product Portfolio Product ICE3PCS01G ICE3PCS02G ICE3PCS03G Frequency(SW) Current Drives Features Package 0.75A OVP+Brown-out DSO-14 0.75A OVP Adjustable DSO-8 0.75A Brown-out DSO-8
78
ICE1CS0x/G
Pre-short Protection Trimmed Reference Voltage 2.5% (2% at 25C) BiCMOS technology for wider VCC Range
Power Factor Correction Block Fulfills Class D Requirements of IEC 61000-3-2 Fixed switching frequency (sync to half PWM freq.) AC brown-out protection Average Current Control Max Duty Cycle of 95% Enhanced Dynamic Response for fast load response Unique Soft-Start to Limit Start Up Current Over-Voltage Protection
IGBT
Pulse-Width-Modulation Block Fixed Switching Frequency Option for external control synchronization Built in Soft Start for higher reliability Max Duty Cycle 47% or 60% Overall Tolerance of Current Limiting <5% Internal Leading Edge Blanking Slope Compensation Fast, soft switching totem pole gate drive (2A) SO16 and DIP16 Pb-free lead plating and RoHS compilant All protection features available
Silicon Carbide
High Voltage
Low Voltage
Applications
ICE1HSO1G
Novel and simple design (12 components + HB driver) Minimum operating frequency is adjustable externally Burst mode operation for output voltage regulation during no load and/or bus over-voltage Multiple protections in case fault Input voltage sense for brown-out protection Open loop/over load fault detection by FB pin with auto-restart and adjustable blanking/restart time Frequency shift for over-current protection Lead Free, RoHS compliant package DSO-8 package
Product ICE1HS01G
Frequency(SW) Dead Time(ns) Current Drives Package 30kHZ~600kHz 380 1.5A DSO-8
80
LLC Resonant + SR
Product ICE2HS01G
Frequency(SW) 30kHz~1MHz
IGBT
Novel LLC/SR operation mode and controlled by primary side controller Multiple protections for SR operation Tight tolerance control Accurate setting of switching frequency and dead time Simple system design Optimized system efficiency Multiple converter protections: OTP, OLP, OCP, Latch-off Enable External disable for either SR switching or HB switching Lead Free, RoHS compliant package DSO-20 package
Silicon Carbide
High Voltage
ICE2HSO1G
Low Voltage
Applications
5V
3V 3
PFC / PWM
Standard and Bronze PFC Block PWM Block Standby Block CoolSET
ICE1CS02/G ICE3AR10080JZ ICE3AR4780JZ ICE3AR2280JZ ICE3AR0680JZ
5V
CoolSETTM
DC/DC
3V3
12V
PFC
PWM
5V CoolSETTM
82
DC/DC
3V3
PFC
PWM
CoolSETTM
Gold
ICE2PCS01G ICE2PCS02/G ICE1HS01G ICE2HS01G ICE3AR10080JZ ICE3AR4780JZ
83
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
5V
Low Voltage
12V
Applications
Isolated AC/DC
Quasi-resonant PWM IC and CoolSET Features
CoolSETTM
Integrated 650V CoolMOS or HV start-up cell for IC self-power supply Quasi-Resonant operation with Digital Frequency Reduction High average efficiency over wide load range Stable operation without jittering/audible noise problem Active burst mode operation for very low stby losses (to achieve standby power <100mW) Auto restart mode for VCC under-voltage/over-voltage protection Auto restart mode for open-loop and output overload protection Auto restart mode for over-temperature protection Latch-off mode for output over-voltage, short-winding BiCMOS Technology (controller) for wide Vcc operation and low IC power consumption Peak power limitation with input voltage compensation Minimum switching frequency limitation (no audible noise on Power Units On/Off) DIP & DSO Package (for controllers and CoolSET) PB-free Plating and RoHS compliance
Quasi-resonant PWM IC and CoolSET Product Portfolio Product ICE2QS01 ICE2QS02G ICE2QS03 ICE2QS03G ICE2QR4765 ICE2QR1765 ICE2QR0665 ICE2QR4780Z ICE2QR2280Z ICE2QR0680Z VDS (breakdown) R(DS)on Power (Universal) Package DIP-8 DSO-8 DIP-8 DSO-8 DIP-8 DIP-8 DIP-8 DIP-7 DIP-7 DIP-7
84
CoolSETTM
Low Voltage
Active Burst Mode to achieve the lowest Standby Power Requirements < 50 mW Optional Latched Off Mode (L) to increase robustness and safety of the system Adjustable Blanking window for high load jumps to increase reliability Startup Cell switched off after Start Up 65kHz/10kHz/130kHz internally fixed Switching Frequency
Over-temperature, over-voltage, short-winding, overload and open-loop, VCC Under-voltage, (Brownout) protections Fixed softstart time Overall Tolerance of Current Limiting < 5% Internal Leading Edge Blanking Time Max duty cycle 72% PB-free Plating and RoHS compliance DIP, DSO and FullPAK packages
Product ICE3AS03LJG ICE3BS03LJG ICE3GS03LJG ICE3BR4765J ICE3BR1765J ICE3BR0665J ICE3BR4765JZ ICE3BR1765JZ ICE3BR0665JZ ICE3BR4765JG ICE3A1065ELJ ICE3A2065ELJ ICE3AR10080JZ ICE3AR4780JZ ICE3AR2280JZ ICE3AR0680JZ ICE3BR2280JZ ICE3BR0680JZ
Frequency(SW) 100kHz 65kHz 130kHz 65kHz 65kHz 65kHz 65kHz 65kHz 65kHz 65kHz 100kHz 100kHz 100kHz 100kHz 100kHz 100kHz 65kHz 65kHz
VDS (breakdown)
R(DS)on
Power (Universal)
650V 650V 650V 650V 650V 650V 650V 650V 650V 800V 800V 800V 800V 800V 800V
4.7 1.7 0.6 4.7 1.7 0.6 4.7 3.0 1.0 10.0 4.7 2.2 0.6 2.2 0.6
18W 31W 49W 18W 30W 47W 17W 16W 28W 10W 20W 28W 52W 28W 52W
Package DSO-8 DSO-8 DSO-8 DIP-8 DIP-8 DIP-8 DIP-7 DIP-7 DIP-7 DSO-12 DIP-8 DIP-8 DIP-7 DIP-7 DIP-7 DIP-7 DIP-7 DIP-7
85
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Applications
Non-Isolated DC/DC
MOSFET Gate Driver IC PX3516
Features Dual MOSFET driver for synchronous rectified bridge converters Adjustable high-side and low-side MOSFET gate drive voltages for optimal efficiency Integrated bootstrap diode for reduced part count Adaptive gate drive control prevents cross-conduction Fast rise and fall times supports switching rates of up to 2MHz
Capable of sinking more than 4A peak current for low switching losses Three-state PWM input for output stage shutdown VCC under-voltage protection Lead-free (RoHS compliant) SOIC and DFN packages
Gate Driver Package RoHS-compliant Number of channels Maximum junction temperature Supply voltage, Vcc BOOT to GND PWM Inputs Quiescent current Iq
VCC HS Driver
BOOT
UVLO
UGATE
PWM
Control Logic
ShootThrough Protection
PHASE PVCC
LS Driver
LGATE
GND PAD
86
TDA21211 / TDA21220
Features Intel compliant DrMOS, Power MOSFET and Driver in one package For Synchronous Buck - step down voltage applications Wide input voltage range 5V ... 25V High efficiency Extremely fast switching technology for improved performance at high switching frequencies Remote Driver Disable function SMODSwitching Modulation of low side MOS
TDA 21211 Input Voltage SMOD function Super Barrier Diode Thermal warning/ shutdown Max average load current MOSFET Voltage Schottky Diode PWM levels Shoot through protection
TDA 21220
30V 16V Low Side Low Side 35A 50A 30V 25V Included Included compatible +3.3V / +5V (tolerant) compatible +3.3V / +5V (tolerant) Included Included
87
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Extremely Robust Switch Node -20V 30V for added reliability in noisy applications Includes active PMOS structure as integrated bootstrap circuit for reduced part count Adaptive Gate Drive for shoot through protection 5V High and Low Side Driving voltage Compatible to standard PWM controller ICs with 3.3V and 5V logic Three-State functionality Small Package: IQFN-40 (6 x 6 x 0.8 mm3) RoHS Compliant (Pb Free)
Low Voltage
Applications
UVLO DISB
Level Shifter
HS Driver
VCIN
LS Driver
IC Driver
CGND GL PGND
88
As microprocessors and ASICs have grown in power and complexity, their voltage regulation requirements have become increasingly demanding. This growing complexity has led to the introduction of Primarion Digital Power Management (DPM) solutions with increased accuracy, realtime monitoring and control capabilities via digital communications bus. The simplified system design the DPM solution provides leads to lower cost and higher performance implementations. Primarions Core Power ICs are designed into voltage regulator modules (VRMs) and motherboards for leading server original equipment manufacturers (OEMs) and are currently shipping into major server OEM systems to power CPU and GPU. Primarions digital power system-level solutions enable improved digital control features: better accuracy and use of lower cost passive components through adaptive digital calibration, improved ability to respond to fast changes in power requirements (transients) using fewer external capacitors with proprietary Active Transient Response (ATR), and easier design-in with a graphical user interface. Primarions overall solution requires substantially fewer components and associated costs as compared to current analog power solutions. Infineon/Primarion PowerCode is a software tool which greatly simplifies the configuration and performance optimization of Infineon digital controllers. It provides an intuitive Graphical User Interface (GUI) that runs on Microsoft Windows. The program comes with an automated design wizard that guides design engineers through the process of configuring single or multi-chip systems. Factory default configurations are supplied which can be easily modified through a variety of dialogs. Range checking and error detection ensure proper configuration.
89
Packages
Power ICs
IGBT
Additional features included are: Chip detection Real-time telemetry and temperature information Fault detection and clearing System file editing Bode plots and load models
Current Sense network design Phase and Frequency adjustment Input and Output settings Access to PMBus programming
Silicon Carbide
High Voltage
Low Voltage
Applications
Benefits Full control over fan speed due to precision reference Low system cost when replacing 4-wire fans Reduced noise level Increased safety of power supplies
Features In combination with 2-wire fans same functionality as 4-wire fan solution Overtemperature protection feature to protect system and power supply Adjustable minimum fan speed (750 to 4000rpm) Fan speed can be increased by external PWM or analogue signal SO-8 Package/RoHS compliant
90
Lighting ICs
Smart Ballast Controller
Smart Ballast Control ICs from Infineon integrate all of the lamp start, run and protection features required by current and future Fluorescent Lamp Ballasts. Digital Mixed Signal Power Control is employed enabling speedy, cost effective and stable ballast designs with the minimum of external components. Reliable and robust high voltage isolation is achieved using Infineons proprietary Coreless Transformer Technology (CLT).
Integrated High Performance PFC Stage Intelligent Digital/Mixed Signal Power Control Integrated High Voltage Half Bridge Driver All Parameters set using only resistors Highly accurate timing and frequency control over a wide temperature range
91
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
Applications
Dramatically reduced time for key tests such as End of Life detection, preheat / Ignition Timeout and Pre Run operation modes Enables Ballast compatibility Separate adjustable levels of Lamp Overload and Rectifier Effect with a wider range of lamp types. Enhanced functionality with series detection. connected lamps Adjustment of the preheat time Flexible support of both Current and Voltage mode pre-heating No High Voltage Capacitor required Reduced BOM costs for detection of Lamp removal (Capacitive mode operation) Intelligent discrimination between Lamp can automatically restart Surge & EOL events following surge events without compromising End of Life event handling Skipped preheating when line Meets standards for interruption < 500ms. emergency lighting (according to DIN VDE 0108) Excellent dynamic PFC performance Suitable for Dimming & Multi enables very low THD across wide Power Ballasts load ranges Self adapting Dead Time Eases design of Multi-Power adjustment of the Half Bridge Ballasts and reduces EMI driver. One single restart at fault mode Enhanced reliability of ballast
Fixed
0-2500ms
02000ms
Fixed
92
Short Form Data Package Operating voltage range Turn-on threshold Supply current during UVLO and fault mode Operating frequency of inverter during RUN mode Operating frequency of inverter during preheating mode Preheating time Adjustable self-adapting dead time max between LS and HS gate drive Adjustable self-adapting dead time min between LS and HS gate drive Operating voltage range of floating HS gate drive LS Current limitation threshold: Ignition/start up/soft start/pre run LS Current protection threshold during RUN mode and preheating End-of-life detection threshold Detection of non-ZVS operation CapMode 1 & 2 PFC preconverter control with critical and discontinuous CM Maximum controlled on-time Hysteresis of zero current detector PFC Current limitation threshold Reference voltage for control of bus voltage Overvoltage detection threshold Undervoltage detection threshold Open loop detection Junction operating temperature range Pb-free lead plating RoHS compliant
min. 10V 20kHz FRFRUN 0ms 2.25s 1.00s -900V 1.5V 0.75V -40A 18s 2.47V 2.68V 1.835V 0.237V -25C
typ. SO-19 14V 110A 2.50s 1.25s 1.6V 0.80V 22.7s 1.0V 1.0V 2.5V 2.73V 1.88V 0.31V
max. 17.5V 170A 120kHz 150kHz 2500ms 2.75s 1.50s +900V 1.7V 0.85V +40A 26s 2.53V 2.78V 1.915V 0.387V +125C
93
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
Infineons 2nd Generation Smart Ballast Controller ICB2FL01 G is designed to control a fluorescent lamp ballast including Power Factor Correction (PFC) Lamp Inverter Control and High voltage level-shift half bridge driver with Coreless Transformer Technology< in one package
Product Highlights Critical Conduction Mode PFC with overcurrent and overvoltage protection and internal loop compensation Very low THD and harmonic distortion for low power application in DCM Improved ignition control for an operation close to the magnetic saturation High reliability and minimized spread due to digital and optimized analog control functions Adjustable End-of-Life Detection in Multi Lamp Topologies and detection of Capacitive Mode Operation Meets Emergency Lighting Standards Suitable for Dimming
Applications
ICB2FL01 G
Excellent dynamic PFC performance enables very low THD across wide load ranges Separate adjustable levels of lamp overload and rectifier effect detection Adjustment of the preheat time No high voltage capacitor required for detection of lamp removal (capacitive mode operation) Automatically restarts by surge and inverter overcurrent events Skipped preheating when line interruption < 500ms Self adapting dead time adjustment of the half bridge driver One single restart at fault mode
Enables ballast compatibility with a wider range of lamp types Flexible support of both current and voltage mode preheating Reduced BOM costs Intelligent discrimination between surge & half bridge overcurrent events Meets standards for emergency lighting (according to DIN VDE 0108) Eases design of multi-power ballasts and reduces EMI Enhanced reliability of ballasts
ICB2FL02 G
The ICB2FL02 G is functionality identical to the ICB2FL01 G with adjustments to certain timings and parameters to further optimize performance in dimming ballasts. Function Cap load 1 protection Suitable for Dimming Max adjustable run frequency Adjustable dead time Dead time detector level Capacitive mode 2 detector level 3 ICB2FL02 G Deactivated Optimized max. 140kHz 1.05s -50mV -50mV ICB1FL01 G Activated yes max. 120kHz 1.05s to 2.5s -100mV -100mV
94
Infineonss latest Smart Ballast Controller ICB2FL03 G in SO-16 offers very similar performance and feature set compared to the well established SO-19 product ICB2FL01 G ICB2FL03 G SO-16 small body 650V single and series ICB1FL01 G SO-19 wide body 900V sinle, series and parrallel
ICB1FL02 G
High Voltage 95 Packages Power ICs IGBT Silicon Carbide
ICB1FL02 G is Infineons 1st Generation Ballast Controller. As performance, feature set and BOM savings have been greatly improved in Infineons 2nd Generation ICs, it is recommended to use those in new designs.
Low Voltage
Applications
ICB2FL03 G
Features High and stable efficiency over wide operating range Optimized for trailing- and leading-edge dimmer Precise PWM for primary PFC and dimming control Power cell for VCC pre-charging with constant current Built-in digital soft-start Foldback correction and cycle-bycycle peak current limitation VCC over-/undervoltage lockout Auto restart mode for short circuit protection Adjustable latch-off mode for output overvoltage protection
ICL8001G
VLED
VIN Detection
ICLS8082G
T1 R1 C11 L1 R19 Q1 R17 R5 C1
BR1
D21 C25
D5 R6 D6 C15 R2
N1 N3
VLED N2 C5 GND
VIN
HV
L2
VR
ZCV
ICL 8001G
Continuous Mode DIM Control PFC PWM-Control Protection Gate Driver
ICLS8082G
GD CS
Continuous Mode DIM Control PFC
VCC
Start-Up Cell
Drain
Gate CS R4
N.C.
GND
GND
GND
* in development
96
Driver ICs
1ED020I12-F
Single channel isolated gate driver Basic isolation according to EN60747-5-2, recognized under UL1577 Fully functional at transient +/- 1420V and static voltages of +/-1200V High voltage side status feedback 2A sink and source rail-to-rail output Max. Tj = 150C Package SO16 300mil Protection functions: Desaturation detection Active Miller clamp Under voltage lockout Shut down Watchdog timer
Single channel isolated gate driver Same functions and features as 1ED020I12-B2 Functional isolation of 1200V
1ED020I12-BT*
Single channel isolated gate driver Same functions and features as 1ED020I12-F Basic isolation according to EN60747-5-2, recognized under UL1577 Adjustable two level turn-off function Desaturation detection with 500A
Low Voltage 97 Packages Power ICs IGBT
DDESAT RG
1ED020I12-B2*
Single channel isolated gate driver Same functions and features as 1ED020I12-F Basic isolation according to EN60747-5-2, recognized under UL1577 Enhanced desaturation detection with 500A
Single channel isolated gate driver Same functions and features as 1ED020I12-BT Functional isolation of 1200V
2ED020I12-F2*
Dual channel isolated gate driver Same functions and features as two times 1ED020I12-F2 Package SO36 300mil
To control logic
Silicon Carbide
High Voltage
1ED020I12-FT*
Applications
1ED020I12-F2
2ED020I12-FI
1200V Isolated high side half bridge gate driver Galvanic isolation of high side driver 2A sink current, 1 A source current Fully functional at transient and static voltages of +/-1200V Integrated operational amplifier and comparator Matched delay times of high side and low side Max. Tj = 150C Package SO18 300mil Protection function: Hardware input interlocking Under voltage lockout Shut down function
2ED020I06-FI
650V isolated high side half bridge gate driver Galvanic isolation of high side driver 2A sink current, 1 A source current Fully functional at transient and static voltages of +/-650V Matched delay times of high side and low side Max. Tj = 150C Package SO18 300mil Protection function: Hardware input interlocking Under voltage lockout
Driver ICs Features / Parameters Products 200V 6ED003L02-F 6EDL04N02PR 6ED003L06-F 6EDL04I02NT 6EDL04I02PT 6EDL04N02PT 2ED020I06-FI 1ED020I12-F 1ED020I12-F2 / B2 * 1ED020I12-FT * / BT * 2ED020I12-FI 2ED020I12-F2 * Channels / Isolated Channels 6/3 6/3 6/3 6/3 6/3 6/3 2/1 1/1 1/1 1/1 2/1 2/2 Supply Voltage Range Integrated Driver bootstrap diode 11V - 20V 9V - 20V 11V - 20V 11V - 20V 11V - 20V 9V - 20V 11.2V - 20V -12V - 0V / 11V - 20V -12V - 0V / 11V - 20V -12V - 0V / 11V - 20V 11.2V - 20V -12V - 0V / 11V - 20V typ. Source / Sink Current 0.17A / 0.38A 0.17A / 0.38A 0.17A / 0.38A 0.17A / 0.38A 0.17A / 0.38A 0.17A / 0.38A 1A / 2A 2A / 2A 2A / 2A 2A / 2A 1A / 2A 2A / 2A
600V
1200V
* in development *1 Fault signal appears L = Latched or T = Temporary latched, adjustable mono flop *2 RDY Signal shows driver has passed UVLO at input and output and communication is ready For automotive qualified parts please see www.infineon.com/eicedriver
98
LIN1,2,3 FAULT EN
LIN1,2,3 FAULT EN
VSS
R Sh
99
Packages
Power ICs
typ. Application PWM Frequency up to 20kHz 20kHz 20kHz 20kHz 20kHz 20kHz 200kHz 100kHz 100kHz 100kHz 200kHz 100kHz
Logic Supply 13V - 17.5V 10V - 17.5V 13V - 17.5V 13V - 17.5V 13V - 17.5V 10V - 17.5V 14V - 18V 5V 5V 5V 14V - 18V 5V
Seperated Input Logic Interlock SGND / PGND neg. pos. neg. neg. pos. pos. pos. pos. / neg. pos. / neg. pos. / neg. pos. pos. / neg.
OCP / DESAT OCP OCP OCP OCP OCP OCP DESAT DESAT DESAT OCP DESAT
Fault *1 T T T T T T L L L L
EN / SD / RST
RDY *2
IGBT
Silicon Carbide
High Voltage
200V and 600V 3-phase gate driver Ultra fast integrated bootstrap diode Fully functional at neg. transient voltages down to -50V (500ns) Programmable restart after over current protection Shut down of all outputs in case of UVLO, OCP Package SO28 300mil (600V) and package TSSOP28 (200V) Protection functions: Over current protection (OCP) Hard ware input interlocking Under voltage lockout (UVLO) Fixed hard ware dead time of Typical application 6ED003L06-F high side and low side Enable function VCC Pin compatible variants HIN1,2,3 of first generation available
DC-Bus
VCC HIN1,2,3
Low Voltage
Applications
Isolated Interfaces
ISOFACE Galvanically Isolated Digital Input Interface ICs for Automation ISO1I811T ISO1I813T
8-Channel Isolated and Fully Integrated Digital Input Interface IC:
Fully integrated system solution for Galvanic isolation Signal processing C interfacing Benefits Compact system solution No need for opto-couplers 75% less PCB area 30% lower eBOM High-precision applications High-speed applications Superior EMI robustness through application-specific settings
Features 8 channel digital input (IEC Type 1/2/3 Integrated galvanic isolation (500V)
Programmable deglitching input filters 9 different settings Individually per channel Diagnostic feedback Wire-break, individually per channel Supply undervoltage
Diagnostics
-wire-break, channel-specific
SP-Number
SP000876494 SP000876504
ISO1I811T ISO1I813T
100
No need for opto-couplers 50% less PCB area 30% lower eBOM Fail save System status feedback Maintenance support
Diagnostic feedback: Over-temperature Over-load Under-voltage Controller interface: 3.3V and 5V Parallel and serial
Key Differences Type ISO1H811G ISO1H812G ISO1H815G ISO1H816G Load Current 0,7A 0,7A 1,2A 1,2A C Interface parallel serial parallel serial SP-Number SP000413798 SP000413800 SP000555576 SP000555578
101
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
Applications
Power Audio
Digital Input Class-D Power Audio Amplifier with DSP SAB2402 / SAB2403
The SAB 2402 / SAB 2403 ICs are high performance energy efficient digital and analog input high dynamic range open loop Class-D speaker amplifiers. Phase-neutral 512TAP FIR digital Filter & Signal Processing features are included for optimizing sound in slim form factor driven Speakers like in Flat Panel TVs & Active Speaker designs. The digital input interfaces S/PDIF for long wires or Optical (TOS-Link) Input as well as the I2S Chip to Chip interface take the incoming PCM Audio data with up to 96kHz (192kHz) via a jitter removing self adopting variable sample rate converter to the 24 Bit wide digital audio processing chain. After the sound and volume control stage the monolithic integrated output power stages work with supply voltages from 10V to 27V ; heatsinkless up to 2 x 25WRMS or 1 x 50 WRMS or 2 x 10WRMS & 1 x 20WRMS on RL 4 or 8 with heatsink up to 2 x 50WRMS or 1 x 100WRMS or 2 x 15WRMS & 1 x 50WRMS on RL 4 or 8 A unique 2.1 Stereo Subwoofer Mode can be implemented with one device on the same stereo PCB footprint and with no additional discrete components. This allows to save one amplifier device. A feature commonly requested in Flat Panel TVs & Mini-Combo Active Speaker Audio Appliances. The high resolution 512TAP FIR Filters allow parametric frequency equalization and/or digital frequency bridge filters without adding non-linearities or phase distortions. The device is available in a thermal enhanced 10 x 10 mm VQFN 68 pin package for heatsinkless operation.
Product Highlights Reduced System BOM BTL differential outputs, no coupling C Footprint compatible 2.1 Subwoofer mode High Quality Audio typ. 100dB SNR Low THD less than 0,3% THD at max 25W; 0,03% THD at 2.5 W @ 1kHz Digital Input SPDIF + I2S with 32kHz up to 96 kHz (*I2S up to 192kHz) 3x 512tap / 6x 256tap FIR filter bank for slim speaker equalization Comes with simple fast PC Tool for speaker tuning & DSP target filter generation Easy to use I2C Command Interface Up to 8 GPIOs
Target Markets Flat Panel - TVs Active Speakers, Soundbars Mini Combo & Portable Electronics Digital PCM and MPEG Media Streaming Multichannel Audio Consumer Speakers HD Audio &DSP Driven Consumer Devices (Blue Ray/DVD) AV/DVD Receivers and AV Amplifiers Development Support PCB Reference Designs (EMI approved) API Command Interface PC SW Tool to create Filter Functions Evaluation Boards Documentation & Application Notes
102
right SPDIF I2S Input Sample Rate Conversion 512Tap FIR for slim speakers Class-D Audio Chain
Power Stage
Subwoofer
Combi IC
USB to SPDIF
left
Class D SAB240x
Center / or Subwoofer
10 to 28V
103
Packages
Power ICs
USB to SPDIF
IGBT
Class D SAB240x
right
Silicon Carbide
High Voltage
Low Voltage
I2C
C 8051
D-ADC
Dyn Vol
OCP, OTP
left
Applications
Naming System
Lighting ICs
I C B X FL X G
ISO = Coreless Transformer Isolation Technology Product Generation Product Class H = Isolated High-Side Switches L = Isolated Low-Side Switches C = Isolated CMOS Interfaces I = Isolated Input Interfaces Channels 8 = 8 Channels 4 = 4 Channels
Package Type G = SO Package T = TSSOP Package Series Versions 0 = 5V 1 = 3.3V/5V 2 = 3.3V/5V (2.5kV Isolation)
104
2
Driver Channels 1 = Driver for one oating gate 2 = Driver for Half-Bridge 6 = Driver for Six-Pack
ED
020
12
F
Extension F = Functional Isolation FA = Functional Isolation, Automotive qualied FTA = Functional Isolation, Two Level Turn O , Automotive qualied Voltage Class 02 = 200V 06 = 600V 12 = 1200V
105
Packages
Power ICs
IGBT
Silicon Carbide
High Voltage
Low Voltage
Applications
Packages
Top and bottom side cooling of SMD devices
For LV MOSFETs different SMD packages like SuperSO8 and CanPAK are available. If the cooling system is designed for main heatflow to the PCB both packages will show similar thermal performance. If the main heat flow is to the top side the CanPAK is the better choice since the thermal resistance to the top side is lower (Rth_top_CanPAK ~ 1 K/W, Rth_top_SuperSO8 ~ 20 K/W)
Heatsink Package
top
top
PCB
bottom
106
D2PAK
ThinPAK
High Voltage
10 x 15 x 4.4 mm
8 x 8 x 1 mm
Silicon Carbide 107 Packages Power ICs IGBT
Low Voltage
The new package features a very small footprint of only 64 mm2 (vs. 150 mm2 for the D2PAK) and a very low profile with only 1 mm height (vs. 4.4 mm for the D2PAK). This significantly smaller package size with ist benchmark low parasitic inductances can be used as a new and effective way to decrease system solution size in power-density driven systems A well designed thermal system is required to achieve high power handling capability. The recommended design is a thin PCB with may vias and a heatsink attached to the backside of the PCB. A high number of thermal vias is needed to reduce the thermal conduction resistance through the board
Applications
3) 4)
1) pin length 20mm like TO-247 2) pin width / thickness 1.2mm / 0.5mm is TO-247 / TO3P-compatible 6.35mm creepage distance of leads at package body 3) isolated screw hole like TO-247 / TO3P 4) 14.8mm nominal distance screw hole to pin out plane is the same as at TO-247 / TO3P
2)
1)
New IGBT technology RCD allows highest power density with small SMD packages
The new IGBT RCD technology in combination with an efficient cooling system allows to use small SMD packages which enable to build compact systems with increased power density. In order to improve the heat dissipation, thermal vias are integrated in the PCB under the device case which results in a low thermal resistance to the opposite side of the PCB. A heatsink complements the cooling system. Isolation to the heatsink is realized with a thermal foil. With this cooling system power dissipation up to 7 to 10 W / IGBT is achievable which corresponds to ~ 2 kW application systems.
108
Packages
Power ICs
IGBT
Package (JEITA-code)
X LxWxH
PIN-Count
Packages
IPAK (TO-251)
3 15.5 x 6.5 x 2.3
All Dimensions in mm
I2PAK (TO-262)
25.1 x 10 x 4.4 2
TO-220 2pin
29.1 x 9.9 x 4.4 3
TO-220 3pin
29.15 x 10.0 x 4.4
TO-220 FullPAK
3 29.6 x 10.5 x 4.7 6
TO-220-6-46
21.7 x 9.9 x 4.4 6
TO-220-6-47
26.1 x 9.9 x 4.4 3
TO-247
40.15 x 15.9 x 5.0 3
TO-247HC
37.6 x 13.6 x 4.5 3
DPAK (TO-252)
9.9 x 6.5 x 2.3
D2PAK (TO-263)
15.0 x 10.0 x 4.4
SO-8/SO-8 dual
5.0 x 6.0 x 1.75 12
SO-16/12
10.0 x 6.0 x 1.75
SO-14
14 8.75 x 6.0 x 1.75 16
SO-16
10.0 x 6.0 x 1.75 18
SO-18
12.8 x 10.3 x 2.65 19
SO-19
12.8 x 10.3 x 2.65 20
SO-20
12.8 x 10.3 x 2.65 3
SC59
3.0 x 2.8 x 1.1
SOT-23
3 2.9 x 2.4 x 1.0 3
SOT-89
4.5 x 4.0 x 1.5 4
SOT-223
6.5 x 7.0 x 1.6 3
SOT-323
2.0 x 2.1 x 0.9 6
SOT-363
2.0 x 2.1 x 0.9 6
TSOP-6
2.9 x 2.5 x 1.1
S3O8
8 3.3 x 3.3 x 1.0
SuperSO8
5.15 x 6.15 x 1.0 8
SuperSO8 dual
5.15 x 6.15 x 1.0 4
VSON (ThinPAK)
8.0 x 8.0 x 1.0 6
CanPAK S-Size
4.8 x 3.8 x 0.65
CanPAK M-Size
7 6.3 x 4.9 x 0.65 10
TDSON-10
3.0 x 3.0 x 0.9 7
DIP-7
9.52 x 8.9 x 4.37 8
DIP-8
9.52 x 8.9 x 4.37 14
DIP-14
19.5 x 8.9 x 4.37 20
DIP-20
24.6 x 9.9 x 4.2
TSSOP-48
48 12.5 x 6.1 x 1.1 36
DSO-36
15.9 x 11.0 x 3.5 40
IQFN-40
6.0 x 6.0 x 0.8 28
TSSOP-28
9.7 x 6.4 x 1.2 28
DSO-28
18.1 x 10.3 x 2.65 68
VQFN-68
10.0 x 10.0 x 0.9
110
TO-251
Package Outline
A 4.96 0.26 B
1 +0.37 -0.11
6.22 -0.25
5.410.37
0.1
0.9 0.25
0.25 M A B 4.57 All metal surfaces tin plated, except area of cut. 3 x 0.75 +0.14 -0.11 2.29 1.0 +0.14 -0.10
0.5 +0.1
Marking Layout
Manufacturer Pin 1
Packing
IGBT
Window 33.5 -0.5
Pieces/Tube: 75
(7)
All dimensions in mm
111
Packages
Power ICs
Silicon Carbide
1234567 AA R
High Voltage
Low Voltage
Applications
TO-251-3
Package Outline
A B
6.22 -0.25
0.1
0.9 0.25
0.25
M
0.5 +0.08 -0.04 3 x 0.75 +0.14 -0.11 2.29 0.9 +0.24 -0.1
A B 4.57
Marking Layout
1234567 AA R
Packing Pieces/Tube: 75
Window
33.5 -0.5
All dimensions in mm
112
(7)
DPAK
Package Outline
6.5 +0.23 -0.10
+0.1 5.4 -0.4
A 1 +0.25 -0.10
2.3 +0.11 -0.14 4.96 0.26 5.43 0.41 0.8 +0.2 -0.29 B 0.9 +0.08 -0.44
6.22 -0.25
0.1
1.44 0.26
0...0.15
0.5 +0.1 -0.04
Foot Print
High Voltage
5.8
10.6 6.4
1.2 5.76
Silicon Carbide
Marking Layout
2.2
1234567 AA M
10.5 16 0.3
6.9
2.5 2.7
All dimensions in mm
113
Packages
Power ICs
IGBT
Low Voltage
Applications
Reverse DPAK
Package Outline
6.6 +0.13 -0.20 5.25 0.25 6.1 +0.12 1 +0.14 -0.13 -0.10 5.03 0.18 5.43 0.41 2.34 +0.07 -0.18 0.89 +0.09 -0.43
0.6 0.09
0.9 0.25
0.25 M A B
Foot Print
5.8
10.6
6.4
1.2 5.76
Marking Layout
1234567 AA
Type code Date code (YWW)
Pin 1
2.2
6.9
10.5 16 0.3
2.5 2.7
All dimensions in mm
114
DPAK 5pin
Package Outline
1 0.1
5.4 0.1
6
0.8 0.15
(4.24)
0.51 MIN.
4.56
0.25
A B
Foot Print
High Voltage
5.8
10.6
6.4
0.8 5.36
2.2
10.5 16 0.3
6.9
2.5 2.7
All dimensions in mm
115
Packages
Power ICs
IGBT
Silicon Carbide
Low Voltage
Applications
TO-220 2pin
Package Outline
3.7 -0.15
15.65 0.3 17 0.3
2.8 0.2
A B
1.27 0.1 4.4 0.1
12.95
0...0.3
3.5 0.2
0.5 0.1
0.25 M A B C
Marking Layout
12345678
AA
Type code Date code (YWW) Production lot code G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Mold chassis Identification code
Manufacturer Pin 1
A 39
Packing Pieces/Tube: 50
Window
33.5 -0.5
All dimensions in mm
116
(7)
TO-220 3pin
Package Outline
+0.36 +0.36 +0.1
9.9 -0.30
A B
2.8 0.2
+0.13 1.27 -0.10
4.4 -0.10
+0.17
170.3
9.25 -0.74
+0.20
4.8 MAX.
13.5 0.5
+0.10
A B
2 x 2.54
Marking Layout
Pin 1
Packing
IGBT
Window 33.5 -0.5
Pieces/Tube: 50
AA
Manufacturer
A 39
(7)
All dimensions in mm
117
Packages
Power ICs
Silicon Carbide
12345678
Type code Date code (YWW) Production lot code H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Mold chassis Identification code
High Voltage
Low Voltage
0.1
Applications
TO-220 FullPAK
Package Outline
B
10.5 0.15
4.7 0.15
A 3.3 -0.15
2.7 0.15
15.99 -0.14
+0.16
+0.2
3 +0.2 -0.05
13.6 0.15
0.36
B A
1.23 0.28 1.14 0.19 1.08 0.43 0.99 0.34 0.7 +0.15 3x -0.05
2.54
0.381
A B
Marking Layout
12345678
Manufacturer Pin 1
AA
Type code Date code (YWW) H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Fab code
Packing Pieces/Tube: 25
Window
33 0.4
All dimensions in mm
118
5.6 0.4
TO-220-6-46
Package Outline
9.9 7.5
10.2 0.3
(0.8)
6.6
12.10.3
1)
8.6 0.3
9.2 0.2
0.05
A B
1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal surfaces tin plated, except area of cut.
Marking Layout
1234567890
AA
Manufacturer Pin 1
a 39
Packing
IGBT
Window
13 0.2
35 0.2
Pieces/Tube: 50
All dimensions in mm
119
Packages
Power ICs
Silicon Carbide
Type code Date code (YWW) Production lot code H = RoHS compliant + halogen-free G = Green Product / RoHS compliant
High Voltage
Low Voltage
Applications
TO-220-6-47
Package Outline
9.9 0.2 9.5 0.2 7.5 6.6
17.5 0.3
15.6 0.3
13
1)
8.6 0.3
9.2 0.2
0.5 0.1 8.4 0.3
0.05
A B
1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal surfaces tin plated, except area of cut.
Marking Layout
1234567890
AA
Manufacturer Pin 1
a 39
Type code Date code (YWW) Production lot code H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Mold chassis Identification code
Packing Pieces/Tube: 50
Window
13 0.2
35 0.2
All dimensions in mm
120
TO-247
Package Outline
+0.23
1.2 -0.25
+0.15
A
5.94 -0.45
+0.06
B 2.03 -0.18
+0.13
5.02 0.19
16.95 0.7
4.39 0.71
20.9
+0.15
20.06 0.26
4.32 -0.22
0.25 M A B
0.62
2.4 0.14
5.44
Marking Layout
Type code
123456789
AA
Manufacturer Pin 1
G = Green Product / RoHS compliant H = Halogen-free + RoHS compliant Date code (YWW)
Fab code
Packing
IGBT
39
Pieces/Tube: 25
All dimensions in mm
121
Packages
Power ICs
Silicon Carbide
High Voltage
Low Voltage
Applications
I2PAK
Package Outline
B
1.27 +0.13 -0.10
7.55 -0.65
4.55 +0.25
13.5 0.5
1.175 0.225
0.254
A B
Marking Layout
12345678
AA
Type code Date code (YWW) Production lot code H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Mold chassis Identification code
Manufacturer Pin 1
A 39
Packing Pieces/Tube: 50
Window
33.5 -0.5
All dimensions in mm
122
(7)
D2PAK
Package Outline
4.4 -0.1
A B
+0.17
+0.31 +0.1
+0.13
+0.2
15 -0.39
+0.88
+0.15
0.5 -0.17
+0.15
0.25
A B
1.5 6.5
Foot Print
High Voltage
1.35 3.75
10.8
16.15
4.6
9.4
Marking Layout
12345678
Manufacturer
A 39
Type code Date code (YWW) Production lot code Mold chassis Identification code G = Green Product / RoHS compliant H = RoHS compliant + halogen-free
IGBT
0.3
Pin 1
AA
24 0.3
10.3
4.75 4.9
All dimensions in mm
123
Packages
Power ICs
16.1
Silicon Carbide
Low Voltage
Applications
D2PAK 7pin
Package Outline
+0.31 10 -0.2
4.4 -0.1
+0.17
1 -0.3
+0.6
8.5 -2
+0.1
1.27 -0.1
+0.13
B
7.55 -0.65
+0.35
0.1
1.3 -0.3
+0.48
9.25 -0.74
+0.2
15 -0.39
+0.88
+0.15
0.5 -0.17
+0.15
A B
1.5 6.5
Foot Print
10.8
16.15 9.4
0.47 0.8
Marking Layout
4.6
12345678
1234567
Pin 1
AA
Manufacturer
A 39
Type code Date code (YWW) Production lot code Mold chassis Identification code
10.3
16.1
24 0.3
4.75 4.9
All dimensions in mm
124
TO-247HC
Package Outline
13.6 0.2 11.7 0.1 8.5 0.2
4.5 0.1
0.45 0.1
4.45 0.1
8.4 0.1
6.39 0.2
14.8 0.3
14.79 0.1
3.61 0.1
3.01 0.1
1.45 0.1
18.35 0.3
1.45 0.1
1.45 0.1
4 +0.1 0
1.05 0.1 1.45 0.1 4.25 0.2 3x 1.2 0.1 1.6 0.1 2x 5.45
0.3 M A B
PG-TOHC-3-1-PO V01
Marking Layout
Type code
1234567890 AA
Date code (YYWW) G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Production lot code
Manufacturer Pin 1
Packing
IGBT
40.9
PG-TOHC-3-1-TU V01
6.4
All dimensions in mm
125
Packages
Power ICs
Silicon Carbide
High Voltage
Low Voltage
Applications
SO-8
Package Outline
0.33 +0.17 x 45 -0.10
1.75 MAX.
0.1 MIN.
4 -0.2
0.1 8x
C
6 0.2
0.64 0.25
0.25 M D C 8x
Index Marking 1
5 -0.21)
Foot Print
1.27
Marking Layout
Type code
123456
Date code (YYWW) Pin 1 Marking G = Green Product / RoHS compliant H = RoHS compliant + halogen-free
Pieces/Tube: 100
8 MAX.
0.2 +0.05 -0
.03
19 MAX.
12 0.3
5.2
6.4
1.75 2.1
7.7
All dimensions in mm
126
4.1
SO-16/12
Package Outline
0.1 MIN. STAND OFF 1.75 MAX. 0.33 x 45 4 -0.2
C 0.1 2x
8.89
0.2
7
M
D C 12x
Index Marking
10 -0.2
Foot Print
High Voltage
5.69
1.27
Silicon Carbide
Marking Layout
Type code Date code (YYWW) Mold compound code
1234567890123 1234 LMC XXXXXXXXXXX
Manufacturer
Lot number Assembly site code (L for AIT) G = Green Product / RoHS compliant H = RoHS compliant + halogen-free
Pieces/Tube: 50
6.5
All dimensions in mm
127
Packages
Power ICs
IGBT
Pin 1 Marking
1.31
0.65
0.2 +0.05 -0
8 MAX.
(1.5)
.01
Applications
SO-14
Package Outline
1.75 MAX.
0.33
4 -0.2
+0.08 -0.17
x 45
0.2 +0.05 -0
.01
0.1 MIN.
7 1 8.75 -0.2 1)
Index Marking
Foot Print
5.69
1.27
Marking Layout
Type code Date code (YYWW) Mold compound code
12345678901 LMC 12 XXXXXXXXXXX
Manufacturer
Pin 1 Marking
1.31
0.65
Pieces/Tube: 50
16 0.3
9.5
7.7
6.5 1.8 2.3
All dimensions in mm
128
4.1
SO-16/12
Package Outline
1.75 MAX.
0.1 MIN.
C
6 0.2
0.64
0.25
8
1)
Foot Print
High Voltage
5.69
1.27
Silicon Carbide
4.1
Marking Layout
Type code Date code (YYWW) Mold compound code
1234567890123 1234 LMC XXXXXXXXXXX
Manufacturer
Lot number Assembly site code (L for AIT) G = Green Product / RoHS compliant H = RoHS compliant + halogen-free
Pieces/Tube: 50
10.3
16 0.3
7.7
1.8 2.3
6.5
All dimensions in mm
129
Packages
Power ICs
IGBT
Pin 1 Marking
1.31
0.65
Low Voltage
Applications
SO-18
Package Outline
0.2 -0.1 STAND OFF 2.45 -0.2 2.65 MAX.
0.35 x 45 7.6 -0.2
12.8 -0.2
10
Foot Print
9.73
1.27
Marking Layout
Type code
Manufacturer
Pin 1 Marking
1.67
0.65
Pieces/Tube: 39
13.3 24 0.3
15.4
10.9
2.7 3.2
All dimensions in mm
130
6.5 -0.2
SO-19
Package Outline
0.2 -0.1 STAND OFF 2.45 -0.2 2.65 MAX.
0.35 x 45 7.6 -0.2
8 MAX.
0.23 +0.09
Index Marking
12.8 -0.2
10
Foot Print
High Voltage
9.73
1.27
Silicon Carbide
6.5 -0.2
15.4
Marking Layout
Type code
Manufacturer
Pieces/Tube: 39
13.3 24 0.3
10.9
2.7 3.2
All dimensions in mm
131
Packages
Power ICs
IGBT
Pin 1 Marking
1.67
0.65
Date code (YYWW) G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Lot number
Low Voltage
Applications
SO-20
Package Outline
0.2 -0.1 STAND OFF 2.45 -0.2 2.65 MAX.
0.35 x 45 7.6 -0.2
0.35+0.15
1)
Index Marking
12.8 -0.2
10
1) Does not include plastic or metal protrusion of 0.15 max. per side
Foot Print
9.73
1.27
Marking Layout
Manufacturer
Type code Pin 1 Marking
1.67
0.65
Date code (YYWW) G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Lot number
Pieces/Tube: 39
13.3 24 0.3
15.4
10.9
2.7 3.2
All dimensions in mm
132
6.5 -0.2
SC59
Package Outline
1.1 0.1 3 0.1 3x0.4 +0.05 -0.1 3 0.1 M 0.1 0.15 MAX. 0.2
+0.1
0.45 0.15
1 0.95
2 0.95 (0.55)
0.1 M
SC59-PO V05
Foot Print
0.8
1.2
Marking Layout
Type code
123
SC59-MK V01
0.2
Pin 1
3.18
1.32
SC59-TP V04
All dimensions in mm
133
Packages
Power ICs
3.28
IGBT
Silicon Carbide
SC59-FPR V05
0.9
1.3
High Voltage
0.9
Low Voltage
Applications
SOT-23
Package Outline
0.15 MIN.
1 0.1 0.1 MAX.
2.9 0.1
3
2.4 0.15
10 MAX.
1)
10 MAX.
5
C 0.95 1.9
0.08...0.1
0...8
0.25 M B C
0.2
Foot Print
0.8
0.8
1.2
Marking Layout
Manufacturer Type code Pin 1
12 S
0.9
1.3
0.9
0.2
Pin 1
3.15
2.65
1.15
All dimensions in mm
134
1.3 0.1
SOT-89
Package Outline
4.5 0.1 45 0.25 0.05 +0.2 acc. to DIN 6784 B 1.5 0.1 0.2 MAX.
1)
1.6 0.2
10 MAX.
2.5 0.1
1 0.1
4 0.25
0.15
1.5 0.45 +0.2 -0.1 3 1) Ejector pin markings possible 0.2 B 0.15
M
0.35 0.1 B x3
Foot Print
High Voltage
0.2 1.6
2.0
0.8
0.7
Marking Layout
123
Manufacturer
Type code
Pin 1
4.3
All dimensions in mm
4.6
12
Silicon Carbide
0.8
1.2
1.0
2.5
Low Voltage
1 0.2
1)
Applications
SOT-223
Package Outline
A 6.5 0.2 3 0.1
4
15 MAX.
2.3
0.5 MIN.
0.28 0.04
0...10
0.25 M B
Foot Print
3.5
1.2 1.1
Marking Layout
G = Green Product / RoHS compliant H = RoHS compliant + halogen-free
1.4
4.8
1.4
Manufacturer
S 12 123456
Type code
Pin 1
7.55
12
3.5 0.2
7 0.3
Pin 1
6.8
1.75
All dimensions in mm
136
SOT-323
Package Outline
0.1 MIN.
1 0.65 0.65
Foot Print
High Voltage
1.6
0.6
0.8
0.65
Marking Layout
Manufacturer
12 S
Pin 1
Pin 1
2.15
1.1
All dimensions in mm
137
Packages
Power ICs
2.3
IGBT
Type code
Silicon Carbide
Low Voltage
Applications
SOT-363
Package Outline
Pin 1 marking
0.1 MIN.
Foot Print
0.65 0.65
Marking Layout
Manufacturer
12
Pin 1 marking
1.6
Type code
2.3 8
Pin 1 marking
2.15
1.1
All dimensions in mm
138
1.25 0.1
2.1 0.1
TSOP-6
Package Outline
2.9 0.2 (2.25) (0.35) 1.1 MAX. 0.1 MAX.
2.5 0.1
0.95 1.9
0.2
B 6x
Foot Print
0.5
High Voltage
1.9
2.9
Marking Layout
12
0.2
Pin 1 marking
3.15
1.15
All dimensions in mm
139
Packages
Power ICs
2.7 8
IGBT
Type code
Silicon Carbide
Low Voltage
1.6 0.1
10 MAX.
Applications
S3O8
Package Outline
0.2 0.1 10.1
3.3 0.1
0.25
A B
Foot Print
2.29
2.36
0.65
0.34
0.31
Marking Layout
1234567
AA
0.8
3.8
Pin 1 Marking
Manufacturer
0.3
Index Marking
3.6
12
1.2
All dimensions in mm
140
0.65
A
3.3 0.1
0.405 0.105
3.3 0.1
2.29 0.1
Foot Print
High Voltage
2.29
2.51
0.80
0.34
Marking Layout
1234567
AA
1.0
3.9
Type code
(YWW) Manufacturer
IGBT
0.3
12
Index Marking
3.6
1.2
All dimensions in mm
141
Packages
Power ICs
Low Voltage
0.60 0.1
Applications
10.1
PowerStage 3x3
Package Outline
0.2 0.1 0.8 0.1
0.65 3.0 0.1
0.05 - 0.05
2.45 0.1
3.0 0.1
0.95 0.1
0.65 0.1
0.35 0.1
2.45 0.1
0.49 0.1
Foot Print
0.2 0.1 0.8 0.1
3.0 0.1
0.95 0.1
0.65 0.1
0.35 0.1
0.05 - 0.05
0.32 0.1
0.49 0.1
Marking Layout
1234567
AA
0.32 0.1
Type code
0.33 0.1
0.33 0.1
(YWW) Manufacturer
0.3
Index Marking
3.6
12
1.2
All dimensions in mm
142
SuperSO8
Package Outline
5.15 0.2
A 0.12 0.1 B
6.15 0.2
5.9 0.2
3.6 0.2
Foot Print
High Voltage
4.7
0.62
0.7
6.85
0.64
0.63
Marking Layout
12345678
AA
A
Pin 1 Marking
Production lot code
Manufacturer
1.7
5.8 12 0.3
5.4
1.3 6.6
1.3
All dimensions in mm
Silicon Carbide
Low Voltage
0.55 0.1
101.5
Applications
VSON
Package Outline
0...0.05
0.2 0.1
1 0.1 8 0.1
A
7.2 0.1
4.75 0.1
0.02
8 0.1
0.5 0.1
1 0.01
0.06
PG-VSON-4-1-PO V01
Foot Print
7.2
4.2 1.43
1 3 1
PG-VSON-4-1-FP V01
Marking Layout
Manufacturer
12345678
Pin 1 Marking H = RoHS compliant + halogen-free G = Green Product / RoHS compliant
Production lot code
Type code
XX
4.75
(YWW)
Packing
12
0.3
8.35
16
1.4
All dimensions in mm
144
2.75 0.1
0.4 0.1
SuperSO8 dual
Package Outline
10.1 0.12 0.1
8 5
0.6 0.1
0.55 0.1
5.15 0.2
B 0.25 0.1
4.3 0.1
6.15 0.2
5.9 0.2
0.05
101.5
3.6 0.2
1.27
0.44 0.1
0.25
A B
Foot Print
High Voltage
0.65
0.62
4.46
0.63
0.7
1.2
0.5
6.85
0.635
0.7
4.7
Marking Layout
12345678
G = Green Product / RoHS compliant H = RoHS compliant + halogen-free Pin 1 Marking
Production lot code
AA
A
Manufacturer
5.8 12 0.3
5.4
1.3
All dimensions in mm
145
Packages
Power ICs
IGBT
Silicon Carbide
Low Voltage
0.55 0.1
Applications
CanPAK SJ
Package Outline
3.83 0.13
2.65 0.05
1.35 0.05
2.8 0.05
0.6 0.02
0.6 0.02
0.05 0.05
0.9 0.02
0.4 0.05
4.8 0.08
Foot Print
2.9 0.58 2.9 0.65
0.7
1.13
0.99 0.99
5.6
1.13
0.65
5.8
0.7
0.9
1.2 0.5
1.2
1.25 0.4
1.25
Marking Layout
1234 1234
3.7 5.1 12
Gate Marking
4.1
0.75 0.9
All dimensions in mm
146
CanPAK SQ
Package Outline
3.83 0.13
2.45 0.1
1.35 0.1
2.8 0.05
0.5 0.02
0.8 0.02
0.05 0.05
4.8 0.08
0.4 0.05
0.8 0.02
Foot Print
High Voltage
0.55
0.95
1.03
1.2
0.8
0.68
5.8
5.6
0.9
0.7
1.25 0.4
1.25
1.2 0.5
1.2
Marking Layout
1234 1234
3.7
5.1 12
Gate Marking
4.1
0.75 0.9
All dimensions in mm
Low Voltage
0.9 0.02
Applications
CanPAK ST
Package Outline
3.83 0.13
2.63 0.1 1.33 0.1 0.6 0.02
0.05 0.05
0.77 0.02
0.4 0.05
4.8 0.08
Foot Print
2.9 0.65 2.9 0.6 0.91 0.65
0.9
0.7
1.09 1.11
0.66
5.8
0.97
0.82
5.6
0.9
0.6 1.25
0.7
0.5 1.2
Marking Layout
1234 1234
3.7 5.1 12
Gate Marking
4.1
0.75 0.9
All dimensions in mm
148
CanPAK MN
Package Outline
4.93 0.13
3.23 0.1
1.63 0.1
3.9 0.05
0.8 0.02
0.9 0.02
0.05 0.05
1.4 0.02
0.4 0.05
6.3 0.05
Foot Print
0.85 1.85
0.85
3.2
1.125
3.2 0.695
3.2 0.75
3.2 1.1
0.7
4x 0.7
1.175
1.175 0.9
0.85 4x 1.8
1.45
2x 1.3
Copper
0.95
0.95
Marking Layout
Gate Marking
1234 1234
5.1
6.6 12
Gate Marking
5.2
0.95 1.2
All dimensions in mm
149
Packages
Power ICs
Silicon Carbide
0.7
0.7
0.675
0.675
2x 0.8
0.9
Solder mask
Stencil apertures
High Voltage
1.85
1.2
1.2
Low Voltage
Applications
CanPAK MP
Package Outline
4.93 0.13
3.36 0.1
2.06 0.1
0.05 0.05
0.6 0.02
0.77 0.02
0.4 0.05
6.3 0.05
Foot Print
1.85 4.2 0.5 1.85 0.65 1.8 1.63 4.15 0.55 1.8 0.7 0.65 0.55 0.66 7.1 1.78 0.55 0.73 0.76 0.7 1.9 Copper Solder mask Stencil apertures 0.5 0.5 0.33
7.3
0.9
0.6 0.23
0.6
Marking Layout
0.9
1.75
0.83
Gate Marking
1234 1234
Gate Marking
5.1
6.6 12
5.2
0.95 1.2
All dimensions in mm
150
CanPAK MX
Package Outline
4.93 0.13
2.75 0.1
1.35 0.1
3.9 0.05
0.7 0.02
0.7 0.02
0.05 0.05
1.4 0.02
0.4 0.05
6.3 0.05
Foot Print
High Voltage
1.85
0.9
0.7
0.93
0.75
1.08
1.8
4.2 0.6
1.8 0.65
7.3
1.45
1.35
0.9
0.75
1.73
0.7
1.88
0.87 0.35
0.87
0.75 0.47
0.75
Solder mask
Marking Layout
Gate Marking
1234 1234
Gate Marking
5.1
6.6 12
5.2
0.95 1.2
All dimensions in mm
Low Voltage
Applications
CanPAK MZ
Package Outline
4.93 0.13
1.6 0.1
3.0 0.1
0.05 0.05
0.7 0.02
0.95 0.02
0.4 0.05
6.3 0.05
Foot Print
1.85
0.75
1.2
1.175
3.2 1.2
3.2
1.2
3.2 0.325
3.2 0.325
0.65
Copper
0.9
0.475 0.7
0.475 0.7
0.475
0.475
2x 0.6
Solder mask
Stencil apertures
Marking Layout
Gate Marking
1234 1234
Gate Marking
5.1
6.6 12
5.2
0.95 1.2
All dimensions in mm
152
TDSON-10
Package Outline
0.42
3 0.1 3 0.1
0.9 0.05
0.35 0.1
2.3
4 x 0.5 = 2
0.23
0.5
0.05 MAX.
Index Marking
0.5
0.2
Index Marking
PG-TDSON-10-2-PO V01
Foot Print
3.5 2.8 1.6 0.7 0.5 0.25 1.65 2.5 0.6 0.5 3.5 2.9 1.45
0.25
0.6
PG-TDSON-10-2-FP V01
Marking Layout
Pin 1 marking
1234 XXXX
153
Packages
Silicon Carbide
Wettable surface
Stencil apertures
0.7
High Voltage
Low Voltage
Applications
DIP-7
Package Outline
4.37 MAX.
0.38 MIN.
1.7 MAX.
7.87 0.38
3.25 MIN.
0.25 +0.1
0.35 7x
5
6.35 0.25 1)
8.9 1
4 1 9.52 0.25 1)
Index Marking 1) Does not include plastic or metal protrusion of 0.25 max. per side
Marking Layout
12345678901
Manufacturer
LMC
XXXXXXXXXXX
Packing Pieces/Tube: 20
9 0.5
15 0.3
All dimensions in mm
154
12.2 0.5
DIP-8
Package Outline
8.9 1
1 4 9.52 0.25 1)
Index Marking 1) Does not include plastic or metal protrusion of 0.25 max. per side
Marking Layout
Manufacturer
LMC
Mold compound code Lot code G = Green Product / RoHS compliant H = RoHS compliant + halogen-free
XXXXXXXXXXX
Packing
IGBT
9 0.5 15 0.3
Pieces/Tube: 20
12.2 0.5
All dimensions in mm
155
Packages
Power ICs
Silicon Carbide
12345678901
Type code
High Voltage
Low Voltage
0.46 0.1
3.25 MIN.
2.54
0.38 MIN.
1.7 MAX.
4.37 MAX.
7.87 0.38
0.35 8x
Applications
DIP-14
Package Outline
4.37 MAX.
0.38 MIN.
3.175 MIN.
1.7 MAX.
0.35 14x
14
19.05 0.25 1)
Index Marking 1) Does not include plastic or metal protrusion of 0.25 max. per side
Marking Layout
1234567890 MC XXXXXXXXXXX
Date code (YYWW) H = RoHS compliant + halogen-free G = Green Product / RoHS compliant Lot number
Packing Pieces/Tube: 20
9 0.5
15 0.3
All dimensions in mm
156
12.2 0.5
DIP-20
Package Outline
0.51 MIN.
3.35 0.15
2.54
0.25 20x
11
9.9 MAX.
20
24.6 0.1
10 0.1 MAX.
Index Marking
Marking Layout
Packing
IGBT
9 0.5 15 0.3
Pieces/Tube: 20
12.2 0.5
All dimensions in mm
157
Packages
Power ICs
Silicon Carbide
123456789012345678 MC XXXXXXXXXXX
High Voltage
Low Voltage
0.87
0.25 +0.1
Applications
TSSOP-48
Package Outline
0.15 -0.1 1.10 MAX.
+0.05 -0.2
0.13 +0.03
-0.04
48
24
1) 2)
Does not include plastic or metal protrusion of 0.15 max. per side Does not include dambar protrusion of 0.05 max. per side
Foot Print
1.3
0.29
7.1
Marking Layout
123456789012 123456789012
XXXXXXXXXXX
Lot number
Packing
All dimensions in mm
158
8 MAX.
1.0
6.1
0.1
DSO-36
Package Outline
3.5 MAX.
3.25 0.1
11 0.15 1)
2)
B
0.25
+0.07 -0.02
0 +0.1
1.1 0.1
2.8
0.65
1.3
6.3
ABC
14.2 0.3
0.25 B
17 x 0.65 = 11.05 36 19
Bottom View
19 36
1 x 45
18
18
13.7 -0.2
Heatslug
15.9 0.1 1)
1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Stand off
Foot Print
1.83
0.65
HLG09551
Marking Layout
Manufacturer
G = Green Product / RoHS compliant H = RoHS compliant + halogen free Pin 1 Marking
XXXXXX
1234567890
Infineon
Packing
Pin 1
20
0.3
XXXXX
16.4
24 0.3
7 0.1
18 0.1
14.7 4
CPSG5808
3.4
All dimensions in mm
159
Packages
Power ICs
Silicon Carbide
17 x 0.65 = 11.05
13.48
High Voltage
0.45
Low Voltage
Index Marking
3.2 0.1
5.9 0.1
Applications
5 3
IQFN-40
Package Outline
0.8 0.05 6 0.1
0...0.05
21 20
0.4 0.1
31 40
6 0.1
0.1 A
1.5 0.1
0.73 0.1
30
11 10 2 0.1 1
0.2 0.1
Foot Print
0.7
4.4 0.25
1.5
2.4
0.4
PG-IQFN-40-1-FP V01
Marking Layout
Manufacturer
12345678
XX
Type code
(YYWW)
Packing
12 0.3
6.3
12
6.3
1 1.2
PG-IQFN-40-1-TP V01
All dimensions in mm
160
0.21 0.1
Index Marking
2.4 0.1
TSSOP-28
Package Outline
Foot Print
High Voltage
A
HLG05506
Marking Layout
Type code
Manufacturer
Pin 1 Marking
Packing
8 0.3
10.2
16 0.3
Pin 1
6.8
1.2 1.6
CPSG5872
All dimensions in mm
161
Packages
Power ICs
IGBT
Silicon Carbide
Low Voltage
Applications
DSO-28
Package Outline
Foot Print
A
HLG05506
Marking Layout
Manufacturer
Type code Pin 1 Marking
Packing
12 0.3
e
G = Green Product / RoHS compliant H = RoHS compliant + halogen free
18.3
24 0.3
15.4
10.9 3 2.6
All dimensions in mm
162
6.5 -0.2
VQFN-68
Package Outline
0.9 MAX. 10 B A (0.65) 0.6 +0.15 -0.1 4.30.1
9.75
A B C
SEATING PLANE
3.55 0.1
8.10.1
68x 0.05
9.75
10
0.5
Index Marking
C
Index Marking
Foot Print
High Voltage
Marking Layout
Manufacturer
Type code
Packing
16
10.35
24
Index Marking
10.35 1.05
All dimensions in mm
163
Packages
Power ICs
IGBT
Silicon Carbide
Low Voltage
68x 0.1
Applications
Packaging Information
Tape and Reel
(DIN IEC 60 286-3) Please consult your nearest Infineon sales offices (www.infineon.com/sales) if you have any queries relating to additional dimensions, dimensional tolerances or variations.
Tape and Reel made of Plastic Reel 180mm and 330mm Carrier tape width: 8, 12mm
Removable transparency foil
330
Direction of unreeling
12 11 10
9 8 7 6 5
4 3
Upper side
2 1
93 07
Sd
Infi
neo
13 0.2
on
164
30 10
Direction of unreeling
1.5 +0.1
4 0.1
Leader (empty)
There shall be a leader of 400mm minimum of cover tape, which includes at least 100mm of carrier tape with empty compartments. All the leader may consist of the carrier tape with empty compartments, sealed by cover tape.
Inf
O V RIG E PA R IN C PA AL K C IN K G T
ine
on
Up to 10 Tapes
IGBT
S
Inf
O V RIG E PA R IN C PA AL K C IN K G T
ine
on
Infi
Barcode label
165
Packages
Power ICs
ne
on
Infi
ne
on
Silicon Carbide
High Voltage
d d
Low Voltage
Applications
Direction of Unreeling
Packaging Information
Tube (DIN IEC60 286-4)
(DIN IEC60 286-4) Please consult your nearest Infineon sales offices (www.infineon.com/sales) if you have any queries relating to additional dimensions, dimensional tolerances or variations.
Tube and Packing Standard Length: 528-2mm; coated (unless stated to the contrary)
85
x. pro Ap m a x .
App
rox.
130
166
Ap
pro
x.
56
Packages
Power ICs
IGBT
Catalog Support
We update the Selection Guide on a regular basis on the internet to provide you with the latest information. Please have a look and find out about the newest products or package updates. www.Infineon.com/PSDSelectionGuide If you have feedback or any comment please go to: www.Infineon.com/PSDSelectionGuide Download electronical version: www.Infineon.com/ePSDSelectionGuide You can order this catalog via phone: 00 800 951 951 951 (toll-free)
Product Support
You can use our simulation and design tools for a first review and more information. PowerEsim - design and simulation tool for high voltage MOSFETs PowerEsim is a CAD tool for designing switching power supplies. Design service is readily available anytime, anywhere. It is so easy to use through a generic Web browser that you dont need any training. www.Infineon.com/PowerEsim SimT - Design and simulation tool for low voltage MOSFETs SimT provides detailed low voltage MOSFETs information for your specific application and operating conditions. Just enter the required operating conditions and the webbased application delivers quickly corresponding device. Simply by inserting your converter requirements, SimT provides different solutions for your buck converter, optimized either in efficiency or cost, to fulfil your needs in each individual case. Furthermore, SimT offers a complete analysis of your solution, including an online simulation based on Simetrix/Simplix. (www.Infineon.com/SimT)
168
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