DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3114
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3114 PACKAGE Isolated TO-220

DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES
Low on-state resistance: RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.0 A) Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) Gate voltage rating: 30 V Avalanche capability ratings Isolated TO-220 package

(Isolated TO-220)

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1

VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg

600 30 4.0 16 30 2.0 150 55 to +150 4.0 10.7

V V A A W W C C A mJ

Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current
Note2

IAS EAS

Single Avalanche Energy Note2

Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13337EJ2V0DS00 (2nd edition) Date Published January 2001 NS CP(K) Printed in Japan

The mark 5 shows major revised points.

1998

2SK3114
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr Test Conditions VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.0 A VGS = 10 V, ID = 2.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 2.0 A VGS(on) = 10 V RG = 10 RL = 10 VDD = 450 V VGS = 10 V ID = 4.0 A IF = 4.0 A, VGS = 0 V IF = 4.0 A, VGS = 0 V di/dt = 50 A/s 2.5 1.0 50 1.6 550 115 13 12 6 35 12 15 4 4.4 0.9 1.3 4.3 2.2 MIN. TYP. MAX. 100 10 3.5 Unit

A A
V S pF pF pF ns ns ns ns nC nC nC V

s C

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T. RL PG. RG VDD ID

90% 90%

VGS VGS
Wave Form

10%

VGS(on)

90%

IAS ID VDD

ID ID
Wave Form

0 10%

10%

= 1 s Duty Cycle 1%

td(on) ton

tr td(off)
toff

tf

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T. IG = 2 mA 50 RL VDD

PG.

Data Sheet D13337EJ2V0DS

2SK3114
TYPICAL CHARACTERISTICS (TA = 25C )

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 40

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

dT - Percentage of Rated Power - %

80

PT - Total Power Dissipation - W

20 40 60 80 100 120 140 160

30

60

20

40

20

10

0 0

20

40

60

80

100

120 140

160

Tch - Channel Temperature - C

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA 100

ID - Drain Current - A

10

d ite im ) L ID(DC) n (o RD Po we r

ID(pulse) PW

=1 0m s 10 0m s

0.1 1

TC = 25C Single Pulse 10

Di 1 m ss 10 0 m s ipa 0m s tio s n Lim ite d

1m s

100

1 000

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth(t) - Transient Thermal Resistance - C/W

100

Rth(CH-A) = 62.5 C/W

10

Rth(CH-C) = 4.17 C/W

0.1 Single Pulse 100m 1m 10m 100m 1 10 100 1 000 PW - Pulse Width - s

0.01 10m

Data Sheet D13337EJ2V0DS

2SK3114

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 8V 10 VGS = 10 V 6V Pulsed

FORWARD TRANSFER CHARACTERISTICS VDS = 10V Pulsed

Tch = 125 C 75 C

100

ID - Drain Current - A

ID - Drain Current - A

10

1.0
25 C -25 C

0.1

10

20

30

40

10

15

VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

VGS(off) - Gate to Source Cutoff Voltage - V

VDS = 10 V ID = 1 mA

| yfs | - Forward Transfer Admittance - S

5.0

10
Tch = -25 C 25 C 75 C 125 C

4.0

3.0

1.0

2.0

1.0

0 -50

50

100

150

VDS = 10 V Pulsed 0.1 0.1

1.0 ID - Drain Current - A

10

Tch - Channel Temperature - C

RDS (on) - Drain to Source On-State Resistance - 9

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

3.0

RDS(on) - Drain to Source On-State Resistance - 9

Pulsed ID = 4.0 A

3.0 VGS = 10 V

Pulsed

VGS = 20 V 2.0

2.0

2.0 A

1.0

1.0

0 0

10

15

1.0

10 ID - Drain Current - A

100

VGS - Gate to Source Voltage - V

Data Sheet D13337EJ2V0DS

2SK3114

RDS (on) - Drain to Source On-State Resistance - 9

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4.0 ID = 4.0 A 2.0 A 3.0

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

ISD - Diode Forward Current - A

100

10

2.0

1.0

1.0 VGS = 10 V 0 -50 Pulsed 0 50 100 150

0.1 VGS = 10 V 0 0.5

0V Pulsed 1.5

1.0

Tch - Channel Temperature - C

VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000

Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns

SWITCHING CHARACTERISTICS 100 td(off) tf 10 td(on)

VGS = 0 V f = 1 MHZ

1 000 Ciss 100 Coss 10 Crss 1 0.1

tr 1 VDD = 150 V VGS = 10 V RG = 10 9 1 ID - Drain Current - A 10

10

100

0.1 0.1

VDS - Drain to Source Voltage - V

REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 000

trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V

600

1 000

VDD = 450 V 300 V 150 V

12 10 VGS 8 6

400

100

200 VDS 0 4 8 12

4 2 0 16

10 0.01

0.1

10

ID - Drain Current - A

Qg - Gate Charge - nC

Data Sheet D13337EJ2V0DS

VGS - Gate to Source Voltage - V

di/dt = 50 A/mS VGS = 0 V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 4 A 14

2SK3114

100
IAS - Single Avalanche Current - A

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD

SINGLE AVALANCHE ENERGY DERATING FACTOR 120 VDD = 150 V RG = 25 W VGS = 20 0 V IAS 4 A

Energy Derating Factor - %

100 80 60 40 20 0 25

10 IAS = 4 A
EAS =1 0.7

mJ

1.0

0.1 10m

RG = 25 W VDD = 150 V VGS = 20 0 V Starting Tch = 25C

100m

1m

10m

50

75

100

125

150

L - Inductive Load - H

Starting Tch - Starting Channel Temperature - C

PACKAGE DRAWINGS (Unit: mm)

Isolated TO-220 (MP-45F)
10.00.3

EQUIVALENT CIRCUIT
Drain

3.20.2

4.50.2 2.70.2
Gate

Body Diode

15.00.3

30.1

40.2

0.70.1 2.54 TYP.

1.30.2 1.50.2 2.54 TYP.

13.5 MIN.

12.00.2

Gate Protection Diode

Source

2.50.1 0.650.1 1.Gate 2.Drain 3.Source

1 2 3

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

Data Sheet D13337EJ2V0DS

2SK3114
[MEMO]

Data Sheet D13337EJ2V0DS

2SK3114

The information in this document is current as of January, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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