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Introduction
Microelectronic circuits may contain a few devices or a few million devices Hand analysis becomes increasingly difficult
Simulation Procedure
Ex: To study the frequency response of an RC circuit
(1) Define the circuit in a language (format) that SPICEunderstands (2) Use an appropriate command to tell SPICE to determine the frequency response
Construct netlist : precise description of each element alongwith the nodes to which it is tied elementlabel node1 node2 value
*Title of the file r1 in out 1k c1 out 0 10p vin in 0 ac 1 .ac dec 200 1meg 50meg
Simulation Procedure
Terminology
Simulating MOSFETs
Syntax: M1 Nd Ng Ns Nsub MyMOSFET L=.18u W=10u .MODEL MyMOSFET NMOS ( parameters.. .. .. ) M2 Nd Ng Ns Nsub MyMOSFET L=.18u W=10u .MODEL MyMOSFET PMOS ( parameters.. .. .. )
The model of the MOSFET must provide various parameters of the transistor, e.g., mobility (uo), gate oxide thickness (tox), threshold voltage (vth), channel-length modulation coefficient (lambda), etc.
Problem1: Plot the input/output characteristic of the stage for 0<Vin<1.8V At what value of Vin does the slope (gain) reaches the max value?
*The program to compute gain**** r1 1 2 500 vin 3 0 vdd 1 0 1.8
Av increased (gm reduced less and Rd increased more so Av=gm*Rd increased) Smoother Vout/Vin curve as Vout approaches close to zero [Vout=Ron/(Rd+Ron)]
*Ix and Vx**** vin 2 0 0.9 vx 1 0 Mn 1 2 0 0 CMOSN L=.36U W=5U .dc vx 0 1.8 .00002 .MODEL CMOSN NMOS ( LEVEL = 8 +VERSION = 3.1 TNOM = 27
Mn1 1 2 3 0 CMOSN L=.36U W=5U Mn2 3 2 0 0 CMOSN L=.36U W=5U .dc vx 0 1.8 .00002
.MODEL CMOSN NMOS ( LEVEL = 8
TOX
= 4E-9
vdd 1 0 1.8
vx 2 0 Mn1 2 1 0 0 CMOSN L=.18U W=5U Mp 2 0 1 1 CMOSP L=.18u W=5u .dc vx 0 1.8 .00002 .MODEL CMOSN NMOS ( LEVEL = 8 +VERSION = 3.1 TNOM = 27 TOX = 4E-9 +PVSAT = 1.299662E3 PETA0 = 1.003159E-4 PKETA = -1.154913E-3 ) .MODEL CMOSP +VERSION = 3.1 ..) PMOS ( TNOM = 27 LEVEL = 8 TOX = 4E-9
If Wp is doubled.
Making PMOS wider is equivalent to equating mobility of PMOS with NMOS Current matched (amost equal currents) For same dimensions,due to low mobility of PMOS, it has lesser drive capability, thus most of the circuits which you have studied are based on NMOS as drivers
Thank you..!!