Procese tehnologice avansate

Procesele tehnologice avansate- solutia dezvolatarii circuitelor la scara micro si nano

Titularul de disciplin:Prof. Dr. Ing. Dan Dasclu Cerc.st. gr. I, dr. Ing. Mircea Dragoman Dr. Emil Mihai Pavelescu (IMT). mircea.dragoman@imt.ro

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Subiectele cursului de azi: Litigrafie cu fascicol de ioni

Nanoimprint
Litigrafia cu atomi Litografia Laser

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Litigrafie cu fascicol de ioni
The focused ion beam lithography (FIB) is based on an energetical ion beam scanned and focused directly onto a substrate. FIB does not use masks or resists and the lithographical process is a point-by-point technique, which consists either of subtracting surface atoms or of decomposition of an organic vapor over the substrate. In the former case, the sputtering of atoms forms the desired pattern imprinted directly on the substrate via scanning. In the latter case, the deposited material on the substrate is the desired pattern. The emitted ions and electrons resulted due to the interaction between the ion beam and substrate are used to monitor and image in real time the FIB lithographical process. The number of features patterned in one second, called the throughput, is low (10 102 features/s) for direct writing EB and FIB methods, and very high (1010 features/s) when the EB projection method

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Why ions ?
Because ions are much larger than electrons, they cannot easily penetrate within individual atoms of the sample. Interaction mainly involves outer shell interaction resulting in atomic ionization and breaking of chemical bonds of the substrate atoms. The penetration depth of the ions is much lower than the penetration of electrons of the same energy. When the ion has come to a stop within the material, it is caught in the matrix of the material. ions are heavier than electrons Because ions are far heavier than electrons, ions can gain a high momentum. For the same energy, the momentum of the ion is about 370 times larger. For the same energy ions move a lot slower than electrons. However, they are still fast compared to the image collection mode and in practice this has no real consequences. The magnetic lenses are less effective on ions than they would be on electrons with the same energy. As a consequence the focused ion beam system is equipped with electro-static lenses and not with magnetic lenses. ions are positive and electrons are negative This difference has negligible consequences and is taken care of by the polarity of fields to control the beam and accelerate the ions. ions are positive, large, heavy and slow, whereas electrons are negative, small, light and fast. The most important consequence of the properties listed above is that ion beams will remove atoms from the substrate and because the beam position, dwell time and size are so well controlled it can be applied to remove material locally in a highly controlled manner, down to the nanometer scale

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FIB deposition
An FIB can also be used to deposit material via ion beam induced deposition. FIB-assisted chemical vapor deposition occurs when a gas, such as tungsten hexacarbonyl (W(CO)6) is introduced to the vacuum chamber and allowed to chemisorb onto the sample. By scanning an area with the beam, the precursor gas will be decomposed into volatile and nonvolatile components; the non-volatile component, such as tungsten, remains on the surface as a deposition. This is useful, as the deposited metal can be used as a sacrificial layer, to protect the underlying sample from the destructive sputtering of the beam. From nanometers to hundred of micrometers in length, tungsten metal deposition allows to put metal lines right where needed. Other materials such as platinum, cobalt, carbon, gold, etc., can also be locally deposited

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FIB etching

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Nanoimprint
In principle, a nanoimprint technique uses a master or mold made from Si or SiO2 that contains the desired pattern, which is realized via an EB or FIB nanolithographical technique. This mold represents a rigid stamp, which is used to imprint a resist. The resist is a polymer, which can be thermo-plastic (must be heated beyond its glass temperature), like PMMA, or UVcurable. After the pattern is stamped in the polymer, the resist residues are eliminated by an etching technique, such as the reactive ion etching (RIE) . The fastest nanoimprint technique is the laser-assisted direct imprint (LADI) where the stamping process is realized in 250 ns by illuminating with a XeCl excimer laser a quartz mask in directed contact with a Si substrate. A molten Si forms at the interface between the quartz mask and the Si substrate, which is subsequently stamped by the quartz mask and cooled, the pattern being transferred from the mask onto the silicon substrate

Procese tehnologice avansate

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Atom Lithography
The ultimate nanolithography technique uses atomic beams, which are collimated and focused by atom optical devices, such as atomic lenses, apertures, and so on. The atom beam interacts often with laser beams and the optical-atomic interaction forces are used either to deposit atoms in order to built nanostructures or to pattern desired shapes via a lithographical technique. An atomic deposition method consists of an incoming atomic beam, which is directed to a standing wave produced by a laser and a mirror system. The standing wave acts as a light mask for atom beams; it is equivalent to an array of lenses that directs the atoms in the optical nodes or antinodes, depending on the sign of the difference between the resonant frequency of atoms and the laser frequency. So, in the mask light of atom lithography the desired pattern is created via nodes and antinodes of a light beam. The incoming atom beam passes through the mask and the atoms are deposited over a resist, which is later developed

Atom beam Light mask Resist Substrate

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Coupled Nanoscale Structures and Superlattices

If a quantum well (or another confined structure such as a quantum wire or a quantum dot) is placed in close proximity to another quantum well (quantum wire or quantum dot), the electrons in one confined structure can interact or not with the electrons in the other depending on the height and width of the barrier that separates the two structures.
In the first case, the quantum wells (quantum wires or quantum dots) are called coupled and the electron wavefunction extends throughout the entire structure, while in the second case we deal with a succession of noninteracting quantum wells (quantum wires or quantum dots), for which the electrons localized in one confined structure can be transferred in the other only through sequential tunneling. Coupling of nanoscale structures is possible since, unlike in wells surrounded by infinite barriers, in finite barrier regions the electron wavefunction decays exponentially, and hence the envelope electron wavefunctions in adjacent wells can overlap if the barrier that separates them is sufficiently thin.

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sym Ec QW1 QW2 antisym

Electron wavefunction splitting into a symmetric and an antisymmetric part when two identical quantum wells are brought in close proximity.

When several identical quantum wells are grown in a periodic structure, with a period L, and are sufficiently close to one another so that they become coupled, the delocalized electron wavefunction feels a periodical energy potential with a period L having a band energy of discrete levels, such that each well contributes one state in each band. For structures with many periods and sufficiently thin barriers (almost) continuous permitted and forbidden electron energy bands develop similar to bulk materials, in which the periodicity is that of the crystalline lattice. This artificial periodic structure, which is an artificial lattice with a controllable cell, is called a superlattice. The positions and widths of the electron energy bands are determined by the form of the periodic potential and therefore can be engineered using advanced semiconductor growth techniques.

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SUPPERLATTICE
Ec Allowed energy bands

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Coulomb Blockade In tightly confined nanostructures, particularly in quantum dots, the Coulomb interaction becomes significant and leads to the dependence of electronic states on the discrete number of particles (electric charges) in the dot. A phenomenon that illustrates this dependence is the Coulomb blockade, which consists of the appearance of a gap at the Fermi level in the energy spectrum of electrons confined in semiconductor quantum dots or small metallic clusters (generically, islands) that are coupled to metallic leads through tunneling barriers
Island EF Tunnel junctions
EF Island e2 / C

e2 / C

Island connected to external leads through tunneling junctions.

The opening of a gap in the energy spectrum at the Fermi level due to the additional Coulomb energy needed by an electron to tunnel in or out of the island can be overcome by applying a bias V = e/C.

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This energy gap, similar to the energy gap in semiconductors, can be viewed as the extra energy needed, due to Coulomb interaction between electrons in the island, for an electron to tunnel in or out of the island. This extra energy, equal to

e2 / 2C
in metallic islands where C is the capacitance between the island and the environment corresponds to an energy gap of

e2 / C

>>

k BT

electron tunneling into a metallic island in the presence of Coulomb blockade is only possible when a sufficiently large applied bias,

V e/C
At an electron can tunnel in the island from one lead, the Fermi energy in the island raises again by e2/C and further tunneling is forbidden by the occurrence of a new energy gap, unless the bias increases to V> 3e/C or the extra electron in the island tunnels out, into the other lead

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The Coulomb blockade is a single-electron phenomenon, which originates in the discrete nature of electric charge that can be transferred from a conducting island connected to electron reservoirs through thin barriers; in contrast, resonant tunneling devices rely on the discrete spectrum of resonant energy levels in a quantum well coupled through thin barriers to electron reservoirs. The Coulomb blockade allows a precise control of small number of electrons, with important application in switching devices with low power dissipation and a corresponding increased level of circuit integration. Single-electron devices based on the Coulomb blockade have generally an extra control of the charge in the island through an additional gate electrode, which induces periodic oscillations of the current through the leads as a function of the gate voltage, and some of them even consist of an array of islands

Si IS BACK!!!!!!!!!!!!!!!!!!!!!!

Procese tehnologice avansate

But, I am working at room temperature!!!!!!!!!!!!