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FET AMPLIFIERS
By,
SHASHIDHAR M
Dept. of E & C
CIT, Gubbi
11/24/2014
Contents
1.
2.
Basics of JFET
FET Small signal analysis
A) JFET common source amplifier using fixed bias
B) Self-Bias JFET configuration
C) JFET common source amplifier using voltage divider configuration
D) JFET SOURCE-FOLLOWER (COMMON-DRAIN) CONFIGURATION
E) JFET COMMON-GATE CONFIGURATION
3.
4.
5.
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1. Basics of JFET
Transistors
Bi-polar
(BJT)
NPN
Uni-polar
(FET)
PNP
n-channel p-channel
(JFET,MOSFET,MESFET..etc.)
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Contd..
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Contd..
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1c.Transfer characteristics
Substituting VGS = 0V
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when VGS = Vp
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Common
source
inverted,
amplified signal
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Graphical determination of gm
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Mathematical Definition of gm
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Eqn of gm becomes
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Exercise on gm
For a JFET with IDSS = 8 mA and VP = - 4V, determine
(a) Maximum gm
(b) Value of gm when VGS = -1.5V
Solutions
(a)
(b)
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Example
Plot gm versus ID with IDSS = 8mA and VP = -4V
gm
2 I DSS
| VP |
g m0
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VGS
1
V
P
2 I DSS
| VP |
Effects of ID on gm
VP
ID
I DSS
P
g m g m0
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ID
I DSS
Plotting gm versus ID
g m g m0
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ID
IDSS
g m0
where
2 I DSS
| VP |
ID
gm
IDSS
gm0
IDSS/2
0.707 gm0
IDSS/4
0.5 gm0
0 mA
Example
Plot gm versus ID with
IDSS = 8mA and VGS = -4V
gm
ID
gm0
IDSS
0.707 gm0
IDSS/2
0.5 gm0
IDSS/4
0 mA
g m g m0
g m0
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ID
IDSS
2 I DSS
| VP |
FET Impedance
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Example
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Zi FET R G
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Determining Zo.
Set Vi 0
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Determining Av
Vo = -g m Vgs rd || R D
Vgs = Vi
Vo = -g m Vi rd || R D
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A v = Vo Vi = -g m rd || R D
A v = Vo Vi = -g m R D when rd 10R D
Example
IDSS=10mA
VP=-8V
Determine the
following for the network
1. g m and rd
2. Z i
3. Zo
4. A V
5. A V ignoring effect of rd
yOS=40S
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IDQ=5.625mA
VGSQ=-2V
Solutions
IDQ=5.625mA
VGSQ=-2V
IDSS=10mA
VP=-8V
gm0
2I DSS 2 10mA
=
=
= 2.5mS
VP
8V
rd =
1
1
=
= 25 k
y os 40S
Z i = R G = 1M
yOS=40S
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Zo = rd || R D = 2k || 25k = 1.85k
Solutions..
Zo = rd || R D = 2k || 25k = 1.85k
AV =
Vo
= -g m R D || rd
Vi
With rd , A v = -3.48
AV =
Vo
= -g m R D
Vi
Without rd , A v = -3.76
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Redrawn Network
Zi = ?
Zo = ?
AV = ?
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C. Unbypassed RS
Initially the resistance rd will be left out
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Vi= 0V
Vi= 0V
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wkt
Applying KCL
but
hence
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If rd is included..
Vi=0v
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Voltage gain(Av):-
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E. JFET SOURCE-FOLLOWER
(COMMON-DRAIN) CONFIGURATION
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Zo:
To find Zo set Vi = 0V
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Av:
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Zi: Zi = Rs || Zi
To find Zi :Let
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Zo:
Av:
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MOSFET amplifiers
MOSFET
Enhancement type
N-channel
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P-channel
Depletion type
N-channel
P-channel
Structure
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Contd.
VGS is negative and VDS a positive voltage:
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Characteristics of D-MOSFET
Positive VGS attracts electrons
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Ac equivalent of D-MOSFET
Equations of ID and VGS remains same as in
JFET
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Exercise
For the following network determine the following if VGSQ = 0.35, IDQ = 7.6mA
A) Determine gm and compare with gm0
B) Find rd
C) Sketch the ac equivalent network
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Structure
Working operation
When VGS = 0V and VDS is positive ID = 0mA.
AC equivalent of E-MOSFET
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where
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Contd..
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1)E-MOSFET DRAIN-FEEDBACK
CONFIGURATION
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Input Impedence(Zi):
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Output Impedence(Zo):-
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Contd..
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Exercise
(a) Determine gm.
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Example 2:
Choose the values of RD and RS for the network that
will result in a gain of 8 using a relatively high level
of gm for this device defined at VGSQ = 1/4VP.
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THANK YOU
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